CN111763911A - ITO film - Google Patents

ITO film Download PDF

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Publication number
CN111763911A
CN111763911A CN202010451500.2A CN202010451500A CN111763911A CN 111763911 A CN111763911 A CN 111763911A CN 202010451500 A CN202010451500 A CN 202010451500A CN 111763911 A CN111763911 A CN 111763911A
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China
Prior art keywords
buffer layer
temperature
ito film
film
ito
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Pending
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CN202010451500.2A
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Chinese (zh)
Inventor
宋世金
朱刘
任丽
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Vital Thin Film Materials Guangdong Co Ltd
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Vital Thin Film Materials Guangdong Co Ltd
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Priority to CN202010451500.2A priority Critical patent/CN111763911A/en
Publication of CN111763911A publication Critical patent/CN111763911A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)

Abstract

The invention relates to an ITO thin film which comprises an oriented growth layer and a temperature-changing buffer layer. Compared with the prior art, the ITO film can obtain the preferred orientation film with excellent transparent conductivity without introducing a heterogeneous buffer layer, and the forbidden bandwidth of the ITO filmE gWide width, high visible light transmittance, high carrier concentration and mobility and excellent optical performance.

Description

ITO film
Technical Field
The invention relates to the field of functional thin film materials and devices, in particular to an ITO thin film.
Background
Forbidden band width of wide forbidden band transparent conductive ITO film at room temperatureE gThe material has the advantages of photoelectric transport performance such as high visible light transmittance, high carrier concentration and mobility, high infrared emissivity and the like between 3.5 and 4.3 eV, has the advantages of high hardness, easiness in etching an amorphous film into an electrode pattern and the like, and is widely applied to the fields of high-mobility thin film transistors, color filters, touch screens, photovoltaics, energy-saving glass and the like. With the continuous refinement of the application scene, further improving the transparent conductivity of the ITO film and reducing the manufacturing cost are always the focus of the research and development of the related industrialization technologies.
The direct current magnetron sputtering is used as the most widely applied ITO film growth technology at present, and has the advantages of high growth rate, uniform large-area film formation, low production cost and the like, but the preferred orientation of the ITO film prepared by the direct current magnetron sputtering is mainly the (222) crystal face. According to Kulkarnia et al report- (Thin Solid Films, 1999, 345: 273-. Therefore, an ITO thin film having a preferred orientation of (004) and its preparation are also receiving increasing attention.
Chinese patent application CN2018111147506 discloses a method for preparing (004) preferred orientation ITO film by a sol-gel method, and although (004) preferred orientation is obtained, the method relates to a plurality of process flows such as glue preparation, glue homogenizing, drying, annealing and the like, the surface of the film is rough and uneven, and the thickness of the nano-scale film is difficult to control.
Chinese patent application CN2016111663657 discloses a preparation method of a 400 main peak crystal face height preferred orientation ITO film, which reduces the oxygen partial pressure of a cavity while the film continuously grows through the gradient control of the oxygen partial pressure in the growth process to obtain a (004) preferred ITO film, but the reduction of the oxygen partial pressure increases the oxygen vacancy concentration, leads to the reduction of the electron mean free path and the optical band gap, and influences the electron mobility and the optical performance of the film.
In conclusion, if a preferred ITO film of (004) with excellent properties is to be obtained, improvement and innovation of the existing ITO film structure are required.
Disclosure of Invention
The invention aims to provide an ITO film with a novel structure.
In order to achieve the purpose, the invention adopts the following technical scheme: an ITO thin film comprises a temperature-changing buffer layer and an oriented growth layer.
As a further improvement of the invention, the orientation growth layer is grown along the orientation determined by the temperature-changing buffer layer.
As a further improvement of the invention, the variable temperature buffer layer is an ITO polycrystalline thin film homogeneous buffer layer.
As a further improvement of the invention, the temperature-changing buffer layer is (004) preferentially oriented. The temperature-changing buffer layer is formed by magnetron sputtering growth, and the temperature gradient in the sputtering growth process is controlled to enable the temperature-changing buffer layer to have (004) preferred orientation.
As a further improvement of the invention, the thickness of the temperature-changing buffer layer is 20-100 nm.
As a further improvement of the invention, the carrier concentration of the temperature-variable buffer layer at the temperature of 300K (Kelvin) is 1E18-1E22 cm-3The electron mobility is 20-50 cm2/Vs。
As a further improvement of the invention, the average visible light transmittance of the temperature-variable buffer layer at 300K is 85-95%.
As a further improvement of the invention, the thickness of the orientation growth layer is 20-1000 nm. The orientation growth layer is prepared by any film growth method capable of continuing preferred orientation.
As a further improvement of the invention, the concentration of the carrier fluid in the 300K lower orientated growth layer is 1E18-1E22 cm-3The electron mobility is 20-50 cm2/Vs。
As a further improvement of the invention, the average visible light transmittance of the oriented growth layer at 300K is 85-95%.
Compared with the prior art, the ITO film can obtain the preferred orientation film with excellent transparent conductivity without introducing a heterogeneous buffer layer, and the forbidden bandwidth of the ITO filmE gWide width, high visible light transmittance, high carrier concentration and mobility and excellent optical performance.
Drawings
FIG. 1 is an XRD pattern of an ITO thin film of example 1;
FIG. 2 is a graph showing a visible light transmittance of the ITO thin film of example 1;
FIG. 3 is a graph of the optical bandgap fit of the ITO film of example 1.
Detailed Description
The technical solutions will be described clearly and completely in the following with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "top", "bottom", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
It should be understood that the terms "first", "second", etc. are used herein to describe various information, but the information should not be limited to these terms, which are only used to distinguish one type of information from another. For example, "first" information may also be referred to as "second" information, and similarly, "second" information may also be referred to as "first" information, without departing from the scope of the present invention.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1.
An ITO film comprises a variable temperature buffer layer and an orientation growth layer, wherein the variable temperature buffer layer is an ITO polycrystalline film homogeneous buffer layer, magnetron sputtering growth is adopted, the buffer layer has (004) preferred orientation through temperature gradient in the sputtering growth process, the thickness of the variable temperature buffer layer is 20 nm, and the concentration of a current under 300K of the variable temperature buffer layer is 1E18 cm-3Electron mobility of 50 cm2Vs, 300K visible light average transmittance 95%. The oriented growth layer grows by adopting magnetron sputtering, continues to inherit the (004) orientation of the temperature-changing buffer layer, the thickness of the oriented growth layer is 20 nm, and the concentration of the carrier in the oriented growth layer is 1 at 300KE18cm-3Electron mobility of 50 cm2Vs, the oriented growth layer has a visible light transmittance of 95% at 300K and an optical band gap ofE op=4.92eV。
Please refer to fig. 1, 2 and 3 for XRD pattern, visible light transmittance curve and optical band gap fitting of the ITO thin film obtained in example 1.
Example 2.
An ITO film comprises a variable temperature buffer layer and an orientation growth layer, wherein the variable temperature buffer layer is an ITO polycrystalline film homogeneous buffer layer, magnetron sputtering growth is adopted, the buffer layer has (004) preferred orientation through temperature gradient in the sputtering growth process, the thickness of the variable temperature buffer layer is 50 nm, and the concentration of a current under 300K of the variable temperature buffer layer is 1E21cm-3Electron mobility of 30 cm2Vs, 300K visible light average transmittance of 90%. The oriented growth layer grows by adopting magnetron sputtering, continues to inherit the (004) orientation of the temperature-changing buffer layer, the thickness of the oriented growth layer is 200 nm, and the concentration of the carrier in the oriented growth layer is 1E21cm at 300K-3Electron mobility of 30 cm2Vs. The orientation growth layer has 90 percent of visible light transmittance and an optical band gap ofE op=4.83eV。
The XRD pattern, the visible light transmittance curve, and the optical band gap fit of the ITO thin film obtained in example 2 are highly similar to those of example 1.
Example 3.
An ITO film comprises a variable temperature buffer layer and an orientation growth layer, wherein the variable temperature buffer layer is an ITO polycrystalline film homogeneous buffer layer, magnetron sputtering growth is adopted, the buffer layer has (004) preferred orientation through temperature gradient in the sputtering growth process, the thickness of the variable temperature buffer layer is 100 nm, and the concentration of a current under 300K of the variable temperature buffer layer is 1E22 cm-3Electron mobility of 20 cm2and/Vs, the average visible light transmittance of the temperature-variable buffer layer at 300K is 85%. The oriented growth layer grows by adopting magnetron sputtering, continues to inherit the (004) orientation of the temperature-changing buffer layer, the thickness of the oriented growth layer is 1000nm, and the concentration of the carrier in the oriented growth layer is 1E22 cm at 300K-3Electron mobility of 20 cm2Vs. Average visible light transmission of oriented growth layer at 300KAn excess of 85% and an optical band gap ofE op=4.54 eV。
The XRD pattern, the visible light transmittance curve, and the optical band gap fit of the ITO thin film obtained in example 3 are highly similar to those of example 1.
Compared with the prior art, the ITO film can obtain the preferred orientation film with excellent transparent conductivity without introducing a heterogeneous buffer layer, and the forbidden bandwidth of the ITO filmE gWide width, high visible light transmittance, high carrier concentration and mobility and excellent optical performance.
Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention as disclosed in the accompanying claims.

Claims (10)

1. An ITO thin film characterized in that: the temperature-changing buffer layer and the orientation growth layer are included.
2. The ITO film of claim 1, wherein: the orientation growth layer grows along the orientation determined by the temperature-changing buffer layer.
3. The ITO film of claim 1, wherein: the temperature-changing buffer layer is an ITO polycrystalline film homogeneous buffer layer.
4. The ITO film of claim 1, wherein: the temperature-changing buffer layer is (004) preferentially oriented.
5. The ITO film of claim 1, wherein: the thickness of the temperature-changing buffer layer is 20-100 nm.
6. The ITO film of claim 1, wherein: the carrier concentration of the variable temperature buffer layer at the temperature of 300K is 1E18-1E22 cm-3Electron mobilityIs 20-50 cm2/Vs。
7. The ITO film of claim 1, wherein: the average visible light transmittance of the temperature-changing buffer layer at the temperature of 300K is 85% -95%.
8. The ITO film of claim 1, wherein: the thickness of the orientation growth layer is 20-1000 nm.
9. The ITO film of claim 1, wherein: the carrier concentration of the oriented growth layer at 300K is 1E18-1E22 cm-3The electron mobility is 20-50 cm2/Vs。
10. The ITO film of claim 1, wherein: the average visible light transmittance of the oriented growth layer at 300K is 85% -95%.
CN202010451500.2A 2020-05-25 2020-05-25 ITO film Pending CN111763911A (en)

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CN202010451500.2A CN111763911A (en) 2020-05-25 2020-05-25 ITO film

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CN202010451500.2A CN111763911A (en) 2020-05-25 2020-05-25 ITO film

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106854754A (en) * 2016-12-16 2017-06-16 桂林电子科技大学 A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106854754A (en) * 2016-12-16 2017-06-16 桂林电子科技大学 A kind of preparation method of 400 main peak crystal face height preferred orientation ito thin film

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Application publication date: 20201013