CN111756877A - Display screen and forming method thereof - Google Patents

Display screen and forming method thereof Download PDF

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Publication number
CN111756877A
CN111756877A CN201910239383.0A CN201910239383A CN111756877A CN 111756877 A CN111756877 A CN 111756877A CN 201910239383 A CN201910239383 A CN 201910239383A CN 111756877 A CN111756877 A CN 111756877A
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CN
China
Prior art keywords
display screen
thin film
invisible light
pixel
field effect
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Pending
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CN201910239383.0A
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Chinese (zh)
Inventor
杨轩
孙伯彰
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Incoflex Semiconductor Technology Ltd
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Incoflex Semiconductor Technology Ltd
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Publication date
Application filed by Incoflex Semiconductor Technology Ltd filed Critical Incoflex Semiconductor Technology Ltd
Priority to CN201910239383.0A priority Critical patent/CN111756877A/en
Publication of CN111756877A publication Critical patent/CN111756877A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026Details of the structure or mounting of specific components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026Details of the structure or mounting of specific components
    • H04M1/0264Details of the structure or mounting of specific components for a camera module assembly

Abstract

The invention relates to a display screen and a forming method thereof, wherein the display screen comprises: the display screen comprises a display screen body and a plurality of pixel units, wherein the plurality of pixel units are arranged on the display screen body in an array manner; the invisible light emitter is correspondingly arranged on at least one pixel unit in the plurality of pixel units and is used for emitting invisible light; and the infrared charge coupled device receiving module is correspondingly arranged on at least one pixel unit in the plurality of pixel units and is electrically connected with the display screen body, when the invisible light contacts an object, the invisible light returns, and the infrared charge coupled device receiving module receives the returned invisible light, sends a signal and controls the display screen body to display pictures. The invisible light emitter and the infrared Charge Coupled Device (CCD) receiving module are integrated in the effective display area (pixel unit) on the display screen, so that the function of identifying objects can be realized, and the manufacturing cost of the mobile phone can be reduced.

Description

Display screen and forming method thereof
Technical Field
The present invention relates to a display, and more particularly, to a display panel and a method for forming the same.
Background
A part of the mobile phones implementing the Face recognition function (Face ID) will be attached to and hidden in the position of the upper frame of the mobile phone, and a part of the mobile phones will use a method of forming a notch or a groove (notch) above the display screen, please refer to fig. 6, a non-display area is formed in the display area of the display screen, and the device implementing the Face recognition function (Face ID) is placed in the non-display area.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
1. the device for realizing the Face identification function (Face ID) is attached to and hidden in the position of the frame on the mobile phone, so that the frame of the mobile phone is larger, and the occupation ratio of a display screen is reduced;
2. the notch or the groove (notch) is arranged on the display screen, so that the attractiveness of the display screen is influenced, and the effective display Area (Active Area, AA) of the display screen is reduced; meanwhile, for the display panel industry, the notch or groove formed in the display screen has the problems of high manufacturing difficulty, low yield, poor reliability and the like.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present invention provide a display screen and a forming method thereof. The specific technical scheme is as follows:
in a first aspect, a display screen having a function of recognizing an object is provided, wherein the display screen includes:
the display screen comprises a display screen body and a plurality of pixel units, wherein the plurality of pixel units are arranged on the display screen body in an array manner;
the invisible light emitter is correspondingly arranged on at least one pixel unit in the plurality of pixel units and is used for emitting invisible light; and
the infrared charge coupled device receiving module is correspondingly arranged on at least one pixel unit in the plurality of pixel units and is electrically connected with the display screen body, when the invisible light contacts an object, the invisible light returns, and the infrared charge coupled device receiving module receives the returned invisible light, sends a signal and controls the display screen body to display pictures;
the signal is the flight time of invisible light, and the picture is a three-dimensional model of the object established by judging the concave-convex property of the surface of the object according to the signal by the display screen body.
In a first possible implementation manner of the first aspect, the display screen body further includes: a substrate; and the thin film field effect transistors are arranged on the substrate, and the pixel units, the invisible light emitter and the infrared charge coupled device receiving module are arranged on the thin film field effect transistors.
With reference to the first possible implementation manner of the first aspect, in a second possible implementation manner of the first aspect, the thin film field effect transistor further includes a top gate type thin film field effect transistor and a back gate type thin film field effect transistor, the top gate type thin film field effect transistor is electrically connected to the plurality of pixel units, the top gate type thin film field effect transistor is used to control the plurality of pixel units, the back gate type thin film field effect transistor is connected to the at least one invisible light emitter and the at least one ir ccd receiving module, and the back gate type thin film field effect transistor is used to control the at least one invisible light emitter and the at least one ir ccd receiving module.
With reference to the second possible implementation manner of the first aspect, in a third possible implementation manner of the first aspect, the top-gate thin film transistor further includes: a polysilicon layer disposed on the substrate; a gate insulating layer disposed on the polysilicon layer; and the first metal layer is arranged on the grid insulation layer, and the first metal layer and the polycrystalline silicon layer form a top grid type thin film field effect transistor.
With reference to the third possible implementation manner of the first aspect, in a fourth possible implementation manner of the first aspect, the back-gate thin film field effect transistor further includes: the insulating layer is arranged on the first metal layer; and an oxide semiconductor layer provided on the insulating layer.
With reference to the fourth possible implementation manner of the first aspect, in a fifth possible implementation manner of the first aspect, the display device further includes a second metal layer disposed on the oxide semiconductor layer, where the second metal layer is used for connecting the top-gate thin film field effect transistor and the plurality of pixel units, and connecting the back-gate thin film field effect transistor and the at least one invisible light emitter and the at least one infrared charge coupled device receiving module.
In a sixth possible implementation manner of the first aspect, each pixel unit further includes a red sub-pixel, a blue sub-pixel, and a green sub-pixel, and the red sub-pixel, the blue sub-pixel, and the green sub-pixel are arranged in a right triangle.
In a seventh possible implementation manner of the first aspect, the infrared ccd receiving module is a monochrome camera.
In a second aspect, a method of forming a display panel, the method of forming a display panel includes the steps of:
forming a display screen body, wherein the display screen body comprises a plurality of pixel units;
integrating at least one invisible light emitter within at least one pixel cell of a plurality of pixel cells; and
at least one infrared charge coupled device receiving module is integrated within at least one of the plurality of pixel cells.
In a first possible implementation manner of the second aspect, the step of forming the display screen body further includes:
forming a substrate;
forming a polysilicon layer on the substrate;
forming a gate insulating layer on the polysilicon layer;
forming a first metal layer on the gate insulating layer, wherein the first metal layer and the polycrystalline silicon layer form a top gate type thin film field effect transistor;
forming an insulating layer on the first metal layer;
forming an oxide semiconductor layer on the insulating layer, wherein the oxide semiconductor layer and the first metal layer form a back gate type thin film field effect transistor;
forming a second metal layer on the oxide semiconductor layer; and
forming a plurality of pixel units on the second metal layer;
the plurality of pixel units are connected with the top gate type thin film field effect transistor through a second metal layer, and the at least one invisible light emitter and the at least one infrared charge coupled device receiving module are connected with the back gate type thin film field effect transistor through the second metal layer.
Compared with the prior art, the invention has the advantages that:
the invisible light emitter and the infrared Charge Coupled Device (CCD) receiving module are integrated in the effective display area (pixel unit) on the display screen, so that the function of identifying objects can be realized, and the manufacturing cost of the mobile phone can be reduced.
Meanwhile, according to the design mode of the invention, a notch or a groove (notch) does not need to be formed on the display screen, which is equivalent to increase of a display area, and not only is the attractiveness of the display screen not influenced, but also the problems of low yield, poor reliability and the like caused by the notch or the groove (notch) formed on the display screen are avoided.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a display screen according to an embodiment of the present invention.
Fig. 2 is a schematic cross-sectional structure diagram of a display screen according to an embodiment of the invention.
Fig. 3 is a schematic diagram of the display screen for identifying an object according to an embodiment of the present invention.
Fig. 4 is a schematic flow chart illustrating steps of a method for forming a display panel according to a second embodiment of the present invention.
Fig. 5 is a schematic flow chart illustrating steps of forming a display panel body according to two embodiments of the present invention.
Fig. 6 is a schematic structural diagram of a display screen in the prior art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In an embodiment of the present invention, please refer to fig. 1, which shows a schematic structural diagram of a display screen 1 according to an embodiment of the present invention. The display screen 1 has a function of identifying an object 8, where the object 8 refers to all physical objects objectively existing in the nature, and may be, for example, a human face, but not limited thereto. The display screen 1 includes a display screen body 2, at least one Invisible light (Invisible laser) emitter 3, and at least one infrared Coupled Device (CCD) receiving module 4, wherein:
the display panel body 2 includes a plurality of pixel units 21, the plurality of pixel units 21 are arranged on the display panel body 2 in an array manner, each pixel unit 21 disclosed in this embodiment further includes a Red (Red, R) sub-pixel 211, a Blue (Blue, B) sub-pixel 212 and a Green (Green, G) sub-pixel 213, and the Red sub-pixel 211, the Blue sub-pixel 212 and the Green sub-pixel 213 are arranged in a right triangle manner, but not limited thereto.
In a preferred embodiment, in order to further describe the display panel 1 shown in fig. 1, please refer to fig. 2, which shows a schematic cross-sectional structure diagram of the display panel 1 according to an embodiment of the present invention. The display panel body 2 further includes a substrate 22 and a thin film transistor 23, the thin film transistor 23 is disposed on the substrate 22, and the plurality of pixel units 21, the at least one invisible light emitter 3 and the at least one infrared Charge Coupled Device (CCD) receiving module 4 are disposed on the thin film transistor 23, but not limited thereto. In the present invention, there is no particular requirement for selecting the material of the substrate 22, and the substrate may be selected conventionally by those skilled in the art, and may be, for example, a flexible Polyimide resin (PI).
In a preferred embodiment, referring to fig. 2 again, the thin film transistor 23 further includes a top gate type thin film transistor 231 and a back gate type thin film transistor 232, wherein the top gate type thin film transistor 231 is electrically connected to the plurality of pixel units 21, preferably connected to the plurality of pixel units 21 through a second metal layer 238, but not limited thereto.
The top gate type thin film transistor 231 is used for controlling the plurality of pixel units 21, the top gate type thin film transistor 231 disclosed in this embodiment further includes a polysilicon (poly) layer 233, a Gate Insulation (GI) layer 234 and a first metal layer 235, the polysilicon (poly) layer 233 is disposed on the substrate 22, and preferably, a required device pattern is etched on the polysilicon (poly) layer 233.
A Gate Insulating (GI) layer 234 is disposed on the polysilicon (poly) layer 233 to insulate the polysilicon (poly) layer 233 from the first metal layer 235, the first metal layer 235 is disposed on the Gate Insulating (GI) layer 234, the first metal layer 235 and the polysilicon (poly) layer 233 form a top gate thin film transistor 231, the top gate thin film transistor 231 is used as a control circuit for the plurality of pixel units 21, but the structure of the top gate thin film transistor 231 is not limited thereto, and those skilled in the art can select other suitable structure of the top gate thin film transistor 231 according to the teachings of the present invention.
The back gate type thin film transistor 232 is connected to at least one invisible light emitter 3 and at least one infrared Charge Coupled Device (CCD) receiving module 4, preferably, but not limited to, the at least one invisible light emitter 3 and the at least one infrared Charge Coupled Device (CCD) receiving module 4 through the second metal layer 238.
The back-gate thin film field effect transistor 232 is used for controlling at least one invisible light emitter 3 and at least one infrared Charge Coupled Device (CCD) receiving module 4, the back-gate thin film field effect transistor 232 disclosed in this embodiment further includes an insulating layer 236 and an oxide semiconductor layer 237, the insulating layer 236 is disposed on the first metal layer 235, the oxide semiconductor layer 237 is disposed on the insulating layer 236, the first metal layer 235 and the oxide semiconductor layer 237 form the back-gate thin film field effect transistor 232, the back-gate thin film field effect transistor 232 is used as a control circuit for the at least one invisible light emitter 3 and the at least one infrared Charge Coupled Device (CCD) receiving module 4, so that the back-gate thin film field effect transistor 232 is independent of the control circuits of the plurality of pixel units 21, however, the structure of the back-gate thin film field effect transistor 232 is not limited thereto, and those skilled in the art can select other back-.
Referring to fig. 1 again, at least one invisible light emitter 3 is correspondingly disposed on at least one pixel unit 21 of the plurality of pixel units 21, where the corresponding disposition refers to that one invisible light emitter 3 is disposed in one pixel unit 21, and preferably, the invisible light emitter 3 and the red, blue and green sub-pixels 211, 212 and 213 are disposed in a rectangular shape, but not limited thereto. As for the number of the invisible light emitters 3, it may be selected according to the actual space of the display screen body 2, and it is preferable to set as many invisible light emitters 3 as possible under the permission of the space, so as to make the model built more accurate, but not limited thereto. The Invisible light emitter 3 is used to emit Invisible light (Invisible laser), which may be ultraviolet light, infrared light, or far infrared light, but is not limited thereto. There may be no particular requirement for the choice of invisible light emitters 3 in the present invention, as is conventional to those skilled in the art.
Referring to fig. 1 again, at least one infrared Charge Coupled Device (CCD) receiving module 4 is correspondingly disposed in at least one pixel unit 21 of the plurality of pixel units 21 and electrically connected to the display screen body 2, where the corresponding disposition refers to disposing one infrared Charge Coupled Device (CCD) receiving module 4 in one pixel unit 21, and the preferred infrared Charge Coupled Device (CCD) receiving module 4 is disposed in a rectangular shape with respect to the red sub-pixel 211, the blue sub-pixel 212 and the green sub-pixel 213, but not limited thereto. As for the number of the infrared Charge Coupled Device (CCD) receiving modules 4, it may be selected according to the actual space of the display screen body 2, and it is preferable to set the infrared Charge Coupled Device (CCD) receiving modules 4 as much as possible under the permission of the space, so as to make the established model more accurate, but not limited thereto. The infrared Charge Coupled Device (CCD) receiving module 4 is used for receiving invisible light, and the infrared Charge Coupled Device (CCD) receiving module 4 is preferably a monochrome camera, but not limited thereto.
Referring to fig. 3, a schematic diagram of the display screen 1 for identifying the object 8 according to an embodiment of the present invention is shown. When the invisible light emitter 3 emits invisible light, the invisible light returns after contacting the object 8, the infrared Charge Coupled Device (CCD) receiving module 4 receives the returned invisible light and sends a signal, the signal is the flight time of the invisible light, the display screen body 2 judges the surface roughness of the object 8 according to the signal to establish a three-dimensional model of the object 8, and the three-dimensional model is displayed on the display screen body 2.
According to the invention, the invisible light emitter 3 and the infrared Charge Coupled Device (CCD) receiving module 4 are integrated in the effective display area (pixel unit 21) on the display screen 1, so that the function of identifying the object 8 can be realized, and the manufacturing cost of the mobile phone can be reduced.
Meanwhile, the design mode of the invention does not need to provide the notch or the groove (notch)7 on the display screen 1, which is equivalent to increase the display area, not only does not influence the beauty of the display screen 1, but also avoids the problems of low yield, poor reliability and the like caused by the notch or the groove (notch) on the display screen.
Referring to fig. 4, a flow chart of steps of a method 5 for forming a display panel 1 according to the second embodiment of the invention is shown. The method 5 for forming the display screen 1 comprises the following steps 501-503, wherein:
step 501: a display screen body 2 is formed, and the display screen body 2 includes a plurality of pixel units 21.
In a preferred embodiment, the method 5 for forming the display panel 1 shown in fig. 4 is further described, please refer to fig. 5, which shows a flow chart of steps for forming the display panel body 2 according to the two embodiments of the present invention. The step 6 of forming the display screen body 2 further comprises a step 601-608, wherein:
step 601: a substrate 22 is formed.
Specifically, the substrate 22 is formed by coating a Polyimide resin (PI) on a glass substrate by a coating method, and after the subsequent steps of manufacturing the display panel 1 are completed, the glass substrate and the substrate 22 are separated by laser irradiation, but the forming method of the substrate 22 is not limited thereto, and those skilled in the art can select other suitable forming methods according to the teachings of the present invention.
Step 602: a polysilicon (poly) layer 233 is formed on the substrate 22.
Specifically, the polysilicon (Poly) layer 233 is formed by depositing polysilicon (Poly) on the substrate 22 by a deposition method, and then etching the polysilicon (Poly) layer to form a desired device pattern using a mask, but the invention is not limited thereto.
Step 603: a Gate Insulating (GI) layer 234 is formed on the polysilicon (poly) layer 233.
Specifically, the Gate Insulating (GI) layer 234 is formed by depositing SiO and SiN in sequence on the polysilicon (poly) layer 233 by a deposition method, but not limited thereto.
Step 604: a first metal layer 235 is formed on the Gate Insulating (GI) layer 234, and the top gate type thin film transistor 231 is formed by the first metal layer 235 and the polysilicon (poly) layer 233.
Specifically, a Metal (Metal) is deposited on the Gate Insulating (GI) layer 234 by a deposition method to form a first Metal layer 235, the first Metal layer 235 and a polysilicon (poly) layer 233 form a top gate thin film transistor 231, and the top gate thin film transistor 231 is used as a control circuit of the plurality of pixel units 21, but the invention is not limited thereto.
Step 605: an insulating layer 236 is formed on the first metal layer 235.
Specifically, an Insulating Layer (ILD)236 is formed on the first metal layer 235 to insulate the first metal layer 235 from the second metal layer 238, but not limited thereto.
Step 606: an oxide semiconductor layer 237 is formed on the insulating layer 236, and the oxide semiconductor layer 237 and the first metal layer 235 form the back gate type thin film transistor 232.
Specifically, an oxide semiconductor material is deposited on the insulating layer 236 by a deposition method to form an oxide semiconductor layer 237, the oxide semiconductor layer 237 and the first metal layer 235 form a back gate thin film field effect transistor 232, and the back gate thin film field effect transistor 232 is used as a control circuit for the invisible light emitter 3 and the infrared Charge Coupled Device (CCD) receiving module 4, so as to realize independent circuit control of the invisible light emitter 3 and the infrared Charge Coupled Device (CCD) receiving module 4, but not limited thereto.
Step 607: a second metal layer 238 is formed on the oxide semiconductor layer 237.
Specifically, a Metal (Metal) is deposited on the Gate Insulating (GI) layer 42 by a deposition method to form a second Metal layer 238, and the invisible light emitter 3 and the infrared Charge Coupled Device (CCD) receiving module 4 are connected to the back gate type thin film transistor 232 and the plurality of pixel units 21 are connected to the top gate type thin film transistor 231 by connecting through the second Metal layer 238, but not limited thereto.
Step 608: a plurality of pixel units 21 are formed on the second metal layer 238.
Specifically, each pixel unit 21 is formed to include a red sub-pixel 211, a blue sub-pixel 212, and a green sub-pixel 213, and the red sub-pixel 211, the blue sub-pixel 212, and the green sub-pixel 213 are arranged in a right triangle, but not limited thereto.
Step 502: at least one invisible light emitter 3 is integrated within at least one pixel cell 21 of the plurality of pixel cells 21.
Specifically, a non-visible light emitter 3 is integrated into a pixel unit 21, and is disposed in a rectangular shape with the red sub-pixel 211, the blue sub-pixel 212, and the green sub-pixel 213, but not limited thereto. The invisible light emitter 3 is used to emit invisible light, and there may be no particular requirement for the selection of the invisible light emitter 3 in the present invention, referring to the conventional selection of those skilled in the art.
Step 503: at least one infrared Charge Coupled Device (CCD) receiving module 4 is integrated within at least one pixel cell 21 of the plurality of pixel cells 21.
Specifically, an infrared Charge Coupled Device (CCD) receiving module 4 is disposed in one pixel unit 21, and is disposed in a rectangular shape with the red sub-pixel 211, the blue sub-pixel 212, and the green sub-pixel 213, but not limited thereto. The infrared Charge Coupled Device (CCD) receiving module 4 is used for receiving invisible light, and is preferably a monochrome camera, which has high sensitivity so as to build a 3D model, but not limited thereto.
The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (10)

1. A display screen having a function of recognizing an object, the display screen comprising:
the display screen comprises a display screen body and a plurality of pixel units, wherein the pixel units are arranged on the display screen body in an array manner;
at least one invisible light emitter correspondingly arranged on at least one pixel unit in the plurality of pixel units, wherein the invisible light emitter is used for emitting invisible light; and
the infrared charge coupled device receiving module is correspondingly arranged on at least one pixel unit in the plurality of pixel units and is electrically connected with the display screen body, when the invisible light contacts the object, the invisible light returns, and the infrared charge coupled device receiving module receives the returned invisible light, sends a signal to the object and controls the display screen body to display pictures;
the signal is the flight time of the invisible light, and the picture is a three-dimensional model of the object, which is established by judging the concavity and convexity of the surface of the object by the display screen body according to the signal.
2. The display screen of claim 1, wherein the display screen body further comprises:
a substrate; and
the plurality of pixel units, the at least one invisible light emitter and the at least one infrared charge-coupled device receiving module are arranged on the thin film field effect transistor.
3. The display screen of claim 2, wherein the thin film field effect transistor further comprises a top gate type thin film field effect transistor and a back gate type thin film field effect transistor, the top gate type thin film field effect transistor is electrically connected with the plurality of pixel units, the top gate type thin film field effect transistor is used for controlling the plurality of pixel units, the back gate type thin film field effect transistor is connected with the at least one invisible light emitter and the at least one ir ccd receiving module, and the back gate type thin film field effect transistor is used for controlling the at least one invisible light emitter and the at least one ir ccd receiving module.
4. The display panel according to claim 3, wherein the top-gate thin film transistor further comprises:
a polysilicon layer disposed on the substrate;
a gate insulating layer disposed on the polysilicon layer; and
and the first metal layer is arranged on the grid insulation layer.
5. The display panel according to claim 4, wherein the back gate type thin film transistor further comprises:
the insulating layer is arranged on the first metal layer; and
and an oxide semiconductor layer provided on the insulating layer, wherein the first metal layer and the oxide semiconductor layer form the back-gate thin film field effect transistor.
6. The display screen of claim 5, further comprising a second metal layer disposed on the oxide semiconductor layer, wherein the second metal layer is used for connecting the top-gate thin film transistor and the plurality of pixel units, and connecting the back-gate thin film transistor and the at least one invisible light emitter and the at least one infrared CCD receiving module.
7. A display screen in accordance with claim 1, wherein each pixel cell further comprises a red sub-pixel, a blue sub-pixel, and a green sub-pixel, the red, blue, and green sub-pixels being arranged in a right triangle.
8. The display screen of claim 1, wherein the infrared ccd receiving module is a monochrome camera.
9. A method for forming a display screen is characterized by comprising the following steps:
forming a display screen body, wherein the display screen body comprises a plurality of pixel units;
integrating at least one invisible light emitter within at least one pixel cell of the plurality of pixel cells; and
at least one infrared charge coupled device receiving module is integrated within at least one of the plurality of pixel cells.
10. The method of claim 9, wherein the step of forming the display body further comprises:
forming a substrate;
forming a polysilicon layer on the substrate;
forming a gate insulating layer on the polysilicon layer;
forming a first metal layer on the grid electrode insulating layer, wherein the first metal layer and the polycrystalline silicon layer form a top grid type thin film field effect transistor;
forming an insulating layer on the first metal layer;
forming an oxide semiconductor layer on the insulating layer, wherein the oxide semiconductor layer and the first metal layer form a back gate type thin film field effect transistor;
forming a second metal layer on the oxide semiconductor layer; and
forming a plurality of pixel units on the second metal layer;
the plurality of pixel units are connected with the top gate type thin film field effect transistor through the second metal layer, and the at least one invisible light emitter and the at least one infrared charge coupled device receiving module are connected with the back gate type thin film field effect transistor through the second metal layer.
CN201910239383.0A 2019-03-27 2019-03-27 Display screen and forming method thereof Pending CN111756877A (en)

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Application Number Priority Date Filing Date Title
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078424A (en) * 2014-06-30 2014-10-01 京东方科技集团股份有限公司 Low-temperature poly-silicon TFT array substrate, manufacturing method thereof and display device
CN109360838A (en) * 2018-09-26 2019-02-19 京东方科技集团股份有限公司 A kind of sensing control display panel and sensing control display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104078424A (en) * 2014-06-30 2014-10-01 京东方科技集团股份有限公司 Low-temperature poly-silicon TFT array substrate, manufacturing method thereof and display device
CN109360838A (en) * 2018-09-26 2019-02-19 京东方科技集团股份有限公司 A kind of sensing control display panel and sensing control display device

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