CN111756327A - 一种晶硅电池LeTID的测试方法及装置 - Google Patents
一种晶硅电池LeTID的测试方法及装置 Download PDFInfo
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- CN111756327A CN111756327A CN202010645454.XA CN202010645454A CN111756327A CN 111756327 A CN111756327 A CN 111756327A CN 202010645454 A CN202010645454 A CN 202010645454A CN 111756327 A CN111756327 A CN 111756327A
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- 238000012360 testing method Methods 0.000 title claims abstract description 54
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 26
- 238000010248 power generation Methods 0.000 claims abstract description 139
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- 230000008569 process Effects 0.000 claims abstract description 69
- 238000000137 annealing Methods 0.000 claims abstract description 27
- 239000012298 atmosphere Substances 0.000 claims abstract description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
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- 238000010438 heat treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
- H02S50/10—Testing of PV devices, e.g. of PV modules or single PV cells
- H02S50/15—Testing of PV devices, e.g. of PV modules or single PV cells using optical means, e.g. using electroluminescence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Secondary Cells (AREA)
Abstract
Description
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Priority Applications (1)
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CN202010645454.XA CN111756327B (zh) | 2020-07-07 | 2020-07-07 | 一种晶硅电池LeTID的测试方法及装置 |
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CN202010645454.XA CN111756327B (zh) | 2020-07-07 | 2020-07-07 | 一种晶硅电池LeTID的测试方法及装置 |
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108091730A (zh) * | 2017-12-28 | 2018-05-29 | 苏州阿特斯阳光电力科技有限公司 | 一种光伏器件的衰减方法及其衰减测试方法 |
CN108615790A (zh) * | 2018-04-11 | 2018-10-02 | 浙江师范大学 | 一种抑制多晶硅perc电池热辅助光诱导衰减的方法 |
CN109004064A (zh) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | 一种p型电池片的制作方法 |
CN109004061A (zh) * | 2018-06-28 | 2018-12-14 | 华南理工大学 | 晶硅光伏太阳能电池电注入退火测试装置及方法 |
CN110311013A (zh) * | 2019-06-28 | 2019-10-08 | 无锡尚德太阳能电力有限公司 | P型多晶硅背钝化电池光衰与转换效率改善方法 |
US20200035853A1 (en) * | 2018-07-30 | 2020-01-30 | mPower Technology, Inc. | In-Situ Rapid Annealing and Operation of Solar Cells for Extreme Environment Applications |
-
2020
- 2020-07-07 CN CN202010645454.XA patent/CN111756327B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108091730A (zh) * | 2017-12-28 | 2018-05-29 | 苏州阿特斯阳光电力科技有限公司 | 一种光伏器件的衰减方法及其衰减测试方法 |
CN108615790A (zh) * | 2018-04-11 | 2018-10-02 | 浙江师范大学 | 一种抑制多晶硅perc电池热辅助光诱导衰减的方法 |
CN109004061A (zh) * | 2018-06-28 | 2018-12-14 | 华南理工大学 | 晶硅光伏太阳能电池电注入退火测试装置及方法 |
CN109004064A (zh) * | 2018-07-26 | 2018-12-14 | 浙江晶科能源有限公司 | 一种p型电池片的制作方法 |
US20200035853A1 (en) * | 2018-07-30 | 2020-01-30 | mPower Technology, Inc. | In-Situ Rapid Annealing and Operation of Solar Cells for Extreme Environment Applications |
CN110311013A (zh) * | 2019-06-28 | 2019-10-08 | 无锡尚德太阳能电力有限公司 | P型多晶硅背钝化电池光衰与转换效率改善方法 |
Non-Patent Citations (3)
Title |
---|
MALLORY A. JENSEN ETAL: "Evolution of LeTID Defects in p-Type Multicrystalline Silicon During Degradation and Regeneration", 《IEEE JOURNAL OF PHOTOVOLTAICS》 * |
MARKO YLI-KOSKI ETAL: "Low-temperature dark anneal as pre-treatment for LeTID in multicrystalline silicon", 《SOLAR ENERGY MATERIALS AND SOLAR CELLS》 * |
于琨 等: "晶硅光衰LID/LeTID研究进展综述", 《科技与创新》 * |
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Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Patentee before: Zhengtai Xinneng Technology Co.,Ltd. |