CN111755943A - Optical parametric oscillator based on pulse laser pumping and working method - Google Patents
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/1083—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering using parametric generation
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/117—Q-switching using intracavity acousto-optic devices
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Abstract
The invention discloses an optical parametric oscillator based on pulse laser pumping and a working method thereof, wherein the optical parametric oscillator comprises the following steps: the device comprises a semiconductor pumping source, a coupling lens, a plane input mirror, a laser crystal, an electro-optical modulation unit, a concave output mirror, a first half-wave plate, an isolator, a second half-wave plate, a convex lens, an OPO plane input mirror, a PPLN crystal and an OPO plane output mirror which are sequentially arranged; pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror, output laser generates pulse laser through an electro-optical modulation unit, the pulse laser is output through a concave output mirror and passes through a first half-wave plate, an isolator and a second half-wave plate, and the polarization direction is matched with the optimal phase of the PPLN crystal; the output polarized laser enters the PPLN crystal through the convex lens, and generates 3.8 μm wave band laser at the temperature less than 100 ℃. The invention can realize the wavelength output of the degenerate point at room temperature.
Description
Technical Field
The invention relates to the technical field of all-solid-state nonlinear frequency conversion, in particular to an optical parametric oscillator based on pulse laser pumping and a working method.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
An Optical Parametric Oscillator (OPO) is an optical frequency conversion device that converts input laser light (so-called pump light, fundamental light) into two output lights (signal light and idler light) of lower frequencies through second-order nonlinear optical interaction.
The wave band of 3-5 mu m is in the atmospheric transmission window interval and the molecular fingerprint area, and has important application value in the fields of environmental monitoring, medical diagnosis, laser radar, photoelectric countermeasure and the like, and especially the 3.8 mu m laser has important application in free space optical communication.
Currently, an Optical Parametric Oscillator (OPO) based on periodically poled lithium niobate crystals (PPLN) is one of the most commonly used means for generating 3-5 μm laser light. However, most of the existing pump sources use 1 μm-band laser, and due to the large quantum loss, the signal light and the idler frequency light cannot be simultaneously in the 3-5 μm-band interval, so that the conversion efficiency is low.
By using a 2-micron pump source and based on the MgO PPLN OPO technology, the signal light and the idler frequency light can be simultaneously converted in a wavelength range of 3-5 microns, and particularly, the output at a degenerate point is obtained, and the conversion efficiency is expected to be greatly enhanced. However, the current scheme based on 2 μm laser pumping of MgO: PPLN OPO can obtain lower output power (below W level), and to realize the output of degenerate point wavelength, the MgO: PPLN crystal needs to be heated to a high temperature of more than 100 ℃, which brings great inconvenience to practical application.
To date, achieving optical parametric laser output at a 3.8 μm degenerate point at room temperature based on an active tuning QTm YAP laser pumping MgO PPLNOPO scheme has not been reported.
Disclosure of Invention
In view of this, the present invention provides an optical parametric oscillator based on pulse laser pumping and a working method thereof, which respectively use LGS electro-optic Q-switched and acousto-optic QTm: YAP lasers as pumping sources to successfully realize optical parametric laser output at a degenerated point of 3.8 μm at room temperature.
In some embodiments, the following technical scheme is adopted:
a pulsed laser pumping based optical parametric oscillator comprising: the device comprises a semiconductor pumping source, a coupling lens, a plane input mirror, a laser crystal, an electro-optical modulation unit, a concave output mirror, a first half-wave plate, an isolator, a second half-wave plate, a convex lens, an OPO plane input mirror, a PPLN crystal and an OPO plane output mirror which are sequentially arranged;
the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the plane input mirror, the output laser generates pulse laser through the electro-optical modulation unit, the pulse laser is output through the concave output mirror and passes through the first half-wave plate, the isolator and the second half-wave plate, and the polarization direction is matched with the PPLN crystal to the best phase; the output polarized laser enters the PPLN crystal through the convex lens, and generates 3.8 μm wave band laser at the temperature less than 100 ℃.
Wherein the electro-optical modulation unit includes: the YAG polarizer, the LGS electro-optic crystal and the 1/4 wave plate are arranged in sequence; the LGS electro-optic crystal is connected with an electro-optic modulation power supply.
In other embodiments, the following technical solutions are adopted:
a pulsed laser pumping based optical parametric oscillator comprising: the two-dimensional acousto-optic Q-switch is sequentially provided with a semiconductor pumping source, a coupling lens, a planar input mirror, a laser crystal, a two-dimensional acousto-optic Q-switch, a concave output mirror, a first half-wave plate, an isolator, a second half-wave plate, a convex lens, an OPO planar input mirror, a PPLN crystal and an OPO planar output mirror;
the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the plane input mirror, the output laser generates pulse laser through the two-dimensional acousto-optic Q-switch, the pulse laser is output through the concave output mirror and passes through the first half-wave plate, the isolator and the second half-wave plate, and the polarization direction is optimally matched with the PPLN crystal; the output polarized laser enters the PPLN crystal through the convex lens, and generates 3.8 μm wave band laser at the temperature less than 100 ℃.
As a further scheme, the semiconductor pump source adopts a 792nm continuously-operating semiconductor laser with adjustable temperature of 15-30 degrees.
As a further scheme, the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the planar input mirror, and laser with the 1937nm wavelength is output.
As a further alternative, the period of the PPLN crystal is 30.2 μm.
As a further scheme, a 45 ° plane mirror is arranged between the second half-wave plate and the convex lens to change the direction of the light path.
As a further scheme, the PPLN crystal is arranged on a temperature control furnace, and the temperature of the PPLN crystal is changed through the temperature control furnace; the temperature of the PPLN crystal is tuned between 25 ℃ and 50 ℃.
In other embodiments, the following technical solutions are adopted:
a working method of an optical parametric oscillator based on pulse laser pumping comprises the following steps:
pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror, laser with the wavelength of 1937nm is output, the laser generates pulse laser through an electro-optical modulation unit, the pulse laser is output through a concave output mirror, and the polarization direction is optimally matched with the PPLN crystal through a first half-wave plate, an isolator and a second half-wave plate; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
In other embodiments, the following technical solutions are adopted:
a working method of an optical parametric oscillator based on pulse laser pumping comprises the following steps:
pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror, laser with the wavelength of 1937nm is output, the laser generates pulse laser through a two-dimensional acousto-optic Q-switch, the pulse laser is output through a concave output mirror, and the polarization direction is matched with the optimal phase of the PPLN crystal through a first half-wave plate, an isolator and a second half-wave plate; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
Compared with the prior art, the invention has the beneficial effects that:
(1) the invention uses LGS electro-optic Q-switch and acousto-optic Q-switch QTm YAP laser as pumping source, based on the combination of 1937nm fundamental frequency light and 30.2 μm PPLN crystal, successfully realizes optical parametric laser output at 3.8 μm degenerate point at room temperature, and can realize maximum output power of 1.2W at 35 ℃ of MgO: PPLN, which is the highest output power realized based on 2 μm laser pumping scheme at present, the invention has huge application prospect in realizing miniaturization, full curing middle and low power middle infrared laser output.
Drawings
FIG. 1 is a schematic diagram of an electro-optical Q-switched Tm-YAP laser pumped PPLN optical parametric oscillator in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of an acousto-optic Q-switched Tm-YAP laser pumped PPLN optical parametric oscillator in accordance with an embodiment of the present invention;
FIG. 3 is a degenerate point spectrum of an Optical Parametric Oscillator (OPO) output in an embodiment of the present invention;
the tunable acousto-optic tunable laser comprises an 101.792nm semiconductor pumping source, 102 an optical fiber, 201.1:3 coupling lenses, 301 a planar input mirror, 302 a concave output mirror, 303 Tm: YAP crystals, 401 YAG polarizers, 402 LGS electro-optic crystals, 403.1/4 wave plates, 404 an electro-optic modulation power supply, 501 a first half wave plate, 502 an isolator, 503 a second half wave plate, 601.45 DEG planar mirror, 602 a convex lens with 100mm of curvature, 701 OPO planar input mirror, 702 OPO planar output mirror, 801 MgO: PPLN crystals, 802 temperature control furnace and 901.2 mu m two-dimensional acousto-optic Q-switch.
Detailed Description
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
The embodiments and features of the embodiments of the present invention may be combined with each other without conflict.
Interpretation of terms:
the degeneracy point, which is generally the parametric and idler wavelengths of the optical parametric output, is different, but by tuning the PPLN crystal temperature, the two wavelengths can be made the same at a particular temperature, a condition known as the degeneracy point.
Example one
In one or more embodiments, a 2 μm pulsed laser pumped optical parametric oscillator is disclosed, with reference to FIG. 1, for electro-optically Q-switched Tm: YAP laser pumped PPLN optical parametric oscillator. The electro-optical Q-switching technique refers to a technique of generating pulsed laser light by inserting an optical modulation element into a laser cavity, and the optical modulation element includes an electro-optical switch and an acousto-optical switch depending on the principle of switching an optical path.
The structure of the oscillator specifically comprises:
the device comprises a 792nm semiconductor pumping source 101, a 1:3 coupling lens 201, a plane input mirror 301, a Tm: YAP303, a YAG polarizer 401, an LGS electro-optical crystal 402, a concave output mirror 302, a first half wave plate 501(1/2 wave plate), an isolator 502, a second half wave plate 503, a 45-degree plane mirror 601, a convex lens 602 with 100mm curvature, an OPO plane input mirror 701, a MgO: PPLN crystal 801 and an OPO plane output mirror 702 which are arranged in sequence, wherein the MgO: PPLN crystal 801 is placed on a temperature-controlled furnace 802 and used for changing the temperature of the MgO: PPLN crystal 801. In this example, the temperature of the MgO PPLN crystal 801 can be tuned between 25 ℃ and 50 ℃.
The oscillator is an optical parametric oscillator using a MgO PPLN nonlinear crystal as a frequency conversion element. The specific working principle of the oscillator is as follows:
the semiconductor laser generates 792nm pump light, the pump light is transmitted through an optical fiber 102, expanded by a 1:3 coupling lens 201, focused on a YAP laser crystal with a cut Tm of c through a plane input mirror 301, and generates 1937nm wavelength laser which is output by a concave output mirror 302;
an electro-optical modulation unit consisting of a YAG polarizer 401, an LGS electro-optical crystal 402 and an 1/4 wave plate 403 is used for generating pulse laser; wherein, the YAG polarizer 401 is used to generate linearly polarized laser light; 1/4 wave plate 403 is used in combination with YAG polarizer 401 to turn off the optical path; the LGS electro-optic crystal 402 is used to open the optical path by applying 1/4 wave voltage; an electro-optic modulation power supply 404 is connected to the LGS electro-optic crystal 402 by conductive lines for controlling the voltage across the LGS electro-optic crystal 402.
The plane input mirror 301 forms a flat cavity structure with a whole cavity length of 12cm by a concave output mirror 302 with a curvature radius of 200mm and a 2 mu m wave band transmittance of 20% and has a high transmittance at 792nm and a high reflection at a 2 mu m wave band. The flat concave cavity structure of the embodiment can effectively compensate the thermal effect of the crystal.
The 1937nm wavelength pulse laser output by the concave output mirror 302 passes through the first half-wave plate 501, the polarization direction of the 1937nm wave band laser is changed, and the laser passes through the isolator 502 with minimum loss; then, the polarization direction of the laser with 1937nm wave band is changed again through the second half-wave plate 503, so that the polarization direction is matched with the optimal phase of the PPLN crystal; the transmission direction is changed by the 45 ° plane mirror 60190 °, and the present embodiment changes the transmission direction by the 45 ° plane mirror 601, so that the cavity type is more compact. Then focusing by a convex lens 602 with 100mm curvature; passes through an OPO plane input mirror 701, enters a 30.2 mu m period MgO PPLN crystal 801, generates 3.8 mu m wave band laser and is output by an OPO plane output mirror 702 with the light transmittance of 20 percent of 3-5 mu m wave band laser.
The embodiment is based on an optical parametric oscillator pumped by a 2-micron-band pulse laser, and can realize output of mid-infrared laser with degenerate point wavelength at room temperature; fig. 3 shows a diagram of a laser spectrum of degenerate point output of an optical parametric oscillator, and it can be seen from fig. 3 that the wavelengths of parametric light and idler light of the optical parametric output are the same, and 3.8 μm band degenerate point laser output is realized.
Example two
In one or more embodiments, a 2 μm pulsed laser pumped optical parametric oscillator is disclosed, with reference to FIG. 2, as an acousto-optic Q-switched Tm: YAP laser pumped PPLN optical parametric oscillator. YAP laser refers to pulse Tm YAP laser based on acousto-optic Q-switch.
The optical parametric oscillator has a specific structure including:
the device comprises a 101-792nm semiconductor pump source 101, a 1:2 coupling lens, a planar input mirror 301, a Tm: YAP laser crystal, a 2 mu m two-dimensional acousto-optic Q-switch 901, a concave output mirror 302, a first half wave plate 501, an isolator 502, a second half wave plate 503, a 45-degree planar mirror 601, a convex lens with curvature of 150mm, an OPO planar input mirror 701, a MgO: PPLN crystal 801 and an OPO planar output mirror 702 which are arranged in sequence; the MgO PPLN crystal 801 is placed on a temperature-controlled furnace 802, and is used for changing the temperature of the MgO PPLN crystal 801.
The oscillator is an optical parametric oscillator using a MgO PPLN nonlinear crystal as a frequency conversion element. The specific working principle of the oscillator is as follows:
the semiconductor laser generates 792nm pump light, the pump light is transmitted through the optical fiber 102, expanded by using a 1:2 coupling lens, passes through the plane input mirror 301, is focused on a C-cut Tm: YAP laser crystal, and generates 1937nm wavelength laser which is output by the concave output mirror 302 with the transmittance of 40%; the two-dimensional acousto-optic Q-switch is used for generating pulse laser; the output 1937nm wavelength pulse laser passes through the first half-wave plate 501, the polarization direction of the 1937nm laser is changed, and the laser passes through the isolator 502 with minimum loss; then, the polarization direction of the 1937nm laser is changed again through the second half-wave plate 503, and the polarization direction is matched with the optimal phase of the PPLN crystal; the transmission direction is changed by 60190 degrees through a 45-degree plane mirror; focusing by a convex lens with the curvature of 150 mm; passes through an OPO plane input mirror 701, enters a 30.2 mu m periodic MgO PPLN crystal 801, generates 3.8 mu m wave band laser and is output by an OPO plane output mirror 702 with the laser transmittance of 20 percent in a 3-5 mu m wave band.
EXAMPLE III
In one or more embodiments, an operating method of an optical parametric oscillator based on 2 μm pulse laser pumping is disclosed, where the optical parametric oscillator corresponds to an optical parametric oscillator structure disclosed in the first embodiment, and the operating method specifically includes:
pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror 301, laser with the wavelength of 1937nm is output, the laser generates pulse laser through an electro-optical modulation unit, the pulse laser is output through a concave output mirror 302, and passes through a first half-wave plate 501, an isolator 502 and a second half-wave plate 503, so that the polarization direction is optimally matched with the PPLN crystal; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
Example four
In one or more embodiments, an operating method of an optical parametric oscillator based on 2 μm pulse laser pumping is disclosed, where the optical parametric oscillator corresponds to the optical parametric oscillator structure disclosed in example two, and the specific operating method includes:
the pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror 301, laser with the wavelength of 1937nm is output, the laser generates pulse laser through a two-dimensional acousto-optic Q-switch, the pulse laser is output through a concave output mirror 302, and the polarization direction is optimally matched with the PPLN crystal through a first half-wave plate 501, an isolator 502 and a second half-wave plate 503; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
Although the embodiments of the present invention have been described with reference to the accompanying drawings, it is not intended to limit the scope of the present invention, and it should be understood by those skilled in the art that various modifications and variations can be made without inventive efforts by those skilled in the art based on the technical solution of the present invention.
Claims (10)
1. An optical parametric oscillator based on pulsed laser pumping, comprising: the device comprises a semiconductor pumping source, a coupling lens, a plane input mirror, a laser crystal, an electro-optical modulation unit, a concave output mirror, a first half-wave plate, an isolator, a second half-wave plate, a convex lens, an OPO plane input mirror, a PPLN crystal and an OPO plane output mirror which are sequentially arranged;
the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the plane input mirror, the output laser generates pulse laser through the electro-optical modulation unit, the pulse laser is output through the concave output mirror and passes through the first half-wave plate, the isolator and the second half-wave plate, and the polarization direction is matched with the PPLN crystal to the best phase; the output polarized laser enters the PPLN crystal through the convex lens, and generates 3.8 μm wave band laser at the temperature less than 100 ℃.
2. The pulsed laser pumping-based optical parametric oscillator of claim 1, wherein the electro-optical modulation unit comprises: the YAG polarizer, the LGS electro-optic crystal and the 1/4 wave plate are arranged in sequence; the LGS electro-optic crystal is connected with an electro-optic modulation power supply.
3. An optical parametric oscillator based on pulsed laser pumping, comprising: the two-dimensional acousto-optic Q-switch is sequentially provided with a semiconductor pumping source, a coupling lens, a planar input mirror, a laser crystal, a two-dimensional acousto-optic Q-switch, a concave output mirror, a first half-wave plate, an isolator, a second half-wave plate, a convex lens, an OPO planar input mirror, a PPLN crystal and an OPO planar output mirror;
the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the plane input mirror, the output laser generates pulse laser through the two-dimensional acousto-optic Q-switch, the pulse laser is output through the concave output mirror and passes through the first half-wave plate, the isolator and the second half-wave plate, and the polarization direction is optimally matched with the PPLN crystal; the output polarized laser enters the PPLN crystal through the convex lens, and generates 3.8 μm wave band laser at the temperature less than 100 ℃.
4. An optical parametric oscillator based on pulsed laser pumping according to claim 1 or 2, characterized in that the semiconductor pump source is a 792nm continuously operating semiconductor laser with adjustable temperature of 15 to 30 degrees.
5. The pulsed laser pumping-based optical parametric oscillator of claim 1 or 2, wherein the pump light generated by the semiconductor pump source is focused on the laser crystal through the coupling lens and the planar input mirror, and outputs laser light with a wavelength of 1937 nm.
6. A pulsed laser pump-based optical parametric oscillator according to claim 1 or 2, wherein the period of the PPLN crystal is 30.2 μm.
7. A pulsed laser pumped optical parametric oscillator as claimed in claim 1 or 2, wherein a 45 ° plane mirror is arranged between the second half-wave plate and the convex lens to change the optical path direction.
8. The pulse laser pumping-based optical parametric oscillator of claim 1 or 2, wherein the PPLN crystal is disposed on a temperature controlled furnace, and the temperature of the PPLN crystal is changed by the temperature controlled furnace; the temperature of the PPLN crystal is tuned between 25 ℃ and 50 ℃.
9. A working method of an optical parametric oscillator based on pulse laser pumping is characterized by comprising the following steps:
pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror, laser with the wavelength of 1937nm is output, the laser generates pulse laser through an electro-optical modulation unit, the pulse laser is output through a concave output mirror, and the polarization direction is optimally matched with the PPLN crystal through a first half-wave plate, an isolator and a second half-wave plate; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
10. A working method of an optical parametric oscillator based on pulse laser pumping is characterized by comprising the following steps:
pump light generated by a semiconductor pump source is focused on a laser crystal through a coupling lens and a plane input mirror, laser with the wavelength of 1937nm is output, the laser generates pulse laser through a two-dimensional acousto-optic Q-switch, the pulse laser is output through a concave output mirror, and the polarization direction is matched with the optimal phase of the PPLN crystal through a first half-wave plate, an isolator and a second half-wave plate; the output polarized laser enters a PPLN crystal with the period of 30.2 μm through a convex lens, and generates 3.8 μm wave band laser at the temperature of less than 100 ℃.
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| CN113054524A (en) * | 2021-03-18 | 2021-06-29 | 中国科学院空天信息创新研究院 | Time-sharing synthesized optical parametric oscillation device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8494024B1 (en) * | 2010-08-02 | 2013-07-23 | The United States Of America As Represented By The Secretary Of The Army | Beam quality of the monoblock laser through use of a 1.5 micron external cavity partial reflector |
| CN204668716U (en) * | 2015-04-21 | 2015-09-23 | 刘晓岚 | Tm:YAP acousto-optic Q modulation switched laser system |
| CN105186273A (en) * | 2015-09-16 | 2015-12-23 | 山东大学 | Double-end-surface pumping optical parametric oscillator |
| CN105449510A (en) * | 2016-01-05 | 2016-03-30 | 中国科学院上海光学精密机械研究所 | All solid state mid-infrared optical parametric oscillator |
| CN106711745A (en) * | 2017-02-26 | 2017-05-24 | 中国科学院上海光学精密机械研究所 | Wide-tuning and narrow-linewidth nanosecond pulse double-resonance medium-infrared parameter oscillator |
| US20200036155A1 (en) * | 2017-04-02 | 2020-01-30 | Jerusalem College Of Technology | Passive q-switching of diode-pumped laser |
-
2020
- 2020-07-15 CN CN202010681980.1A patent/CN111755943B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8494024B1 (en) * | 2010-08-02 | 2013-07-23 | The United States Of America As Represented By The Secretary Of The Army | Beam quality of the monoblock laser through use of a 1.5 micron external cavity partial reflector |
| CN204668716U (en) * | 2015-04-21 | 2015-09-23 | 刘晓岚 | Tm:YAP acousto-optic Q modulation switched laser system |
| CN105186273A (en) * | 2015-09-16 | 2015-12-23 | 山东大学 | Double-end-surface pumping optical parametric oscillator |
| CN105449510A (en) * | 2016-01-05 | 2016-03-30 | 中国科学院上海光学精密机械研究所 | All solid state mid-infrared optical parametric oscillator |
| CN106711745A (en) * | 2017-02-26 | 2017-05-24 | 中国科学院上海光学精密机械研究所 | Wide-tuning and narrow-linewidth nanosecond pulse double-resonance medium-infrared parameter oscillator |
| US20200036155A1 (en) * | 2017-04-02 | 2020-01-30 | Jerusalem College Of Technology | Passive q-switching of diode-pumped laser |
Non-Patent Citations (2)
| Title |
|---|
| LIN XU ET AL.: "Tm:YLF laser-pumped periodically poled MgO-doped congruent LiNbO3 crystal optical parametric oscillator", 《OPTICS LETTERS》 * |
| YALING YANG ET AL.: "High-peak-power Q-switched 1988 nm bulk laser based on an electro-optical La3Ga5SiO14 modulator", 《APPLIED OPTICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113054524A (en) * | 2021-03-18 | 2021-06-29 | 中国科学院空天信息创新研究院 | Time-sharing synthesized optical parametric oscillation device |
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