CN111753627A - Fingerprint sensor and display device including the same - Google Patents

Fingerprint sensor and display device including the same Download PDF

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Publication number
CN111753627A
CN111753627A CN202010207707.5A CN202010207707A CN111753627A CN 111753627 A CN111753627 A CN 111753627A CN 202010207707 A CN202010207707 A CN 202010207707A CN 111753627 A CN111753627 A CN 111753627A
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Prior art keywords
sensing region
sensing
fingerprint
disposed
light sensor
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李秀贞
郑金东
金裕娜
金一南
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Samsung Display Co Ltd
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Samsung Display Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00—Arrangements for image or video recognition or understanding
    • G06V10/70—Arrangements for image or video recognition or understanding using pattern recognition or machine learning
    • G06V10/74—Image or video pattern matching; Proximity measures in feature spaces
    • G06V10/75—Organisation of the matching processes, e.g. simultaneous or sequential comparisons of image or video features; Coarse-fine approaches, e.g. multi-scale approaches; using context analysis; Selection of dictionaries
    • G06V10/751—Comparing pixel values or logical combinations thereof, or feature values having positional relevance, e.g. template matching

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Abstract

A fingerprint sensor and a display device including the fingerprint sensor are provided. The fingerprint sensor includes base substrate, first light sensor and second light sensor, wherein: in the base substrate, a first sensing region and a second sensing region are defined on a plane; a first light sensor disposed on the base substrate in a first sensing region; a second light sensor is disposed on the base substrate in a second sensing region. The first sensing region has an area larger than that of the second sensing region, and the first light sensor has a width wider than that of the second light sensor.

Description

Fingerprint sensor and display device including the same
Cross Reference to Related Applications
This application claims priority from korean patent application No. 10-2019-0035098, filed on 27.3.2019 to the korean intellectual property office, the disclosure of which is incorporated herein by reference in its entirety.
Technical Field
The present invention relates to a fingerprint sensor and a display device including the fingerprint sensor.
Background
Recently, as display devices such as smart phones and tablet computers are used in many fields, biometric authentication methods using fingerprints of users, and the like, have been widely used. To provide the fingerprint sensing function, the fingerprint sensor may be built in or attached to the display device.
The fingerprint sensor may be configured as, for example, a light-sensitive type fingerprint sensor. The light-sensitive fingerprint sensor may include a light source, a lens, and a light sensor array. When a high-density photosensor array is disposed on the entire display device to read a user's fingerprint, the manufacturing cost of the display device may be unnecessarily increased.
Disclosure of Invention
The present disclosure provides a light-sensitive type fingerprint sensor and a display device including the same, wherein the light-sensitive type fingerprint sensor is configured to complicatedly use a high-resolution fingerprint sensor and a low-resolution fingerprint sensor.
According to an exemplary embodiment of the present invention, a fingerprint sensor is provided, the fingerprint sensor comprising a base substrate, a plurality of first light sensors and a plurality of second light sensors, wherein: the base substrate has a first sensing region and a second sensing region; a plurality of first light sensors disposed on the base substrate in a first sensing region; a plurality of second light sensors is disposed on the base substrate in a second sensing region. The first sensing region has an area larger than that of the second sensing region. The second photo sensors have a higher arrangement density than that of the first photo sensors.
Each of the first light sensors has a width wider than a width of each of the second light sensors.
Each of the first light sensors has a width of about 30 μm to about 100 μm, and each of the second light sensors has a width of about 0.1 μm to about 10 μm.
Each of the first photosensors includes a switching transistor and a first optoelectronic device, wherein the first optoelectronic device is connected to one electrode of the switching transistor.
Each of the second photosensors includes a circuit layer, a second optoelectronic device, a color filter layer, and a lens layer, wherein the second optoelectronic device is disposed on the circuit layer, and the color filter layer and the lens layer are disposed on the second optoelectronic device.
Each of the first and second optoelectronic devices is a silicon-based photodiode, and each of the second photosensors is a complementary metal-oxide-semiconductor (CMOS) image sensor.
The base substrate further includes a first region surrounding the first sensing region and the second sensing region. No light sensor is disposed in the first region.
The first and second sensing regions are spaced apart from each other, and the base substrate further includes a second region between the first and second sensing regions. No light sensor is disposed in the second region.
The fingerprint sensor further includes a fingerprint detector disposed on the base substrate, the fingerprint detector being disposed in the first area. The fingerprint detector comprises a vertical fingerprint detector arranged adjacent to a long side of the base substrate and a horizontal fingerprint detector arranged adjacent to a short side of the base substrate.
The vertical fingerprint detector includes a first vertical fingerprint detector and a second vertical fingerprint detector. The first vertical fingerprint detector is electrically connected to the first light sensor and the second vertical fingerprint detector is electrically connected to the second light sensor.
The fingerprint sensor may further include a first driving signal line, a second driving signal line, and a detection signal line disposed on the base substrate. The first drive signal line is electrically connected to the first vertical fingerprint detector and the first light sensor, and the second drive signal line is electrically connected to the second vertical fingerprint detector and the second light sensor. The detection signal line is electrically connected to the first light sensor, the second light sensor, and the horizontal fingerprint detector.
The base substrate also includes a third sensing region spaced apart from the first sensing region. The second sensing region is located between the first sensing region and the third sensing region. The third sensing region includes a first light sensor.
The base substrate also includes a fourth sensing region spaced apart from the second sensing region. The first sensing region may be located between the second sensing region and the fourth sensing region. The fourth sensing region includes a second light sensor.
The fingerprint sensor may further include a fingerprint detector disposed on the base substrate. The fingerprint detector comprises a first vertical fingerprint detector electrically connected to the first light sensor and a second vertical fingerprint detector electrically connected to the second light sensor. A first vertical fingerprint detector is disposed in the first region and a second vertical fingerprint detector is disposed in the second sensing region.
The fingerprint detector comprises a horizontal fingerprint detector. A horizontal fingerprint detector is disposed in the second sensing region and is electrically connected to the first light sensor and the second light sensor.
The second light sensor, the second vertical fingerprint detector and the horizontal fingerprint detector are integrated to form a light sensor module. The light sensor module is attached to the base substrate.
According to an exemplary embodiment of the present invention, there is provided a display device including a display panel having a plurality of pixels formed in the display panel and a fingerprint sensor disposed on the display panel. The fingerprint sensor comprises a base substrate having a first sensing area and a second sensing area, a first light sensor disposed on the base substrate in the first sensing area, and a second light sensor disposed on the base substrate in the second sensing area. The first sensing region has an area larger than that of the second sensing region. Each of the first light sensors has a width wider than a width of each of the second light sensors.
The display panel includes a display area and a non-display area. The display area includes a plurality of pixels. The display area overlaps the first and second sensing areas. The arrangement density of the second photo sensors is different from that of the first photo sensors.
The arrangement density of the second photo sensors is greater than that of the pixels, and the arrangement density of the pixels is greater than that of the first photo sensors.
Each of the pixels includes a light emitting device. At least one of the first light sensors overlaps with a corresponding pixel. At least one of the second photosensors overlaps with a corresponding pixel.
Drawings
Exemplary embodiments will now be described more fully hereinafter with reference to the accompanying drawings; however, they may be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the exemplary embodiments to those skilled in the art.
In the drawings, the size may be exaggerated for clarity of illustration. It will be understood that when an element is referred to as being "between" two elements, it can be the only element between the two elements, or one or more intervening elements may also be present. Like reference numerals refer to like elements throughout.
Fig. 1 is an exploded perspective view of a display device according to an exemplary embodiment of the present invention.
Fig. 2 is a plan view schematically illustrating a display apparatus according to an exemplary embodiment of the present invention.
Fig. 3A to 3C are plan views illustrating various exemplary embodiments of an arrangement structure of pixels and photosensors according to the present invention.
Fig. 4 is a circuit diagram illustrating an example of the pixel shown in fig. 2 according to the present invention.
Fig. 5 is a plan view schematically illustrating a sensing panel according to an exemplary embodiment of the present invention.
Fig. 6 is a circuit diagram of a first light sensor according to an exemplary embodiment of the present invention.
Fig. 7 is a circuit diagram of a second light sensor according to an exemplary embodiment of the present invention.
FIG. 8 is a cross-sectional view of a sensing panel taken along line A-A' shown in FIG. 5, according to an exemplary embodiment of the invention.
Fig. 9 is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention.
Fig. 10 is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention.
Fig. 11A is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention.
Fig. 11B is a side view of the sensing panel shown in fig. 11A according to an exemplary embodiment of the present invention.
Detailed Description
Effects and characteristics of the present invention and a method of achieving the effects and characteristics will become apparent by referring to embodiments described in detail below and accompanying drawings. However, the present invention is not limited to the embodiments disclosed herein, but may be implemented in various forms. The embodiments are provided by way of example only so that those skilled in the art can fully appreciate the features of the present invention and its scope. Accordingly, the invention is defined by the scope of the appended claims.
The term "on … …" used to indicate that an element or layer is on another element or layer includes both the case where an element or layer is directly on another element or layer and the case where an element or layer is on another element or layer through yet another element or layer. Throughout the description of the invention, the same drawing reference numerals are used for the same elements in the various figures.
Although the terms "first," "second," etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from another. Therefore, according to the technical concept of the present invention, the first component may be the second component, and conversely, the second component may be the first component.
Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings.
Fig. 1 is an exploded perspective view of a display device according to an embodiment of the present invention.
Referring to fig. 1, a display apparatus 1000 according to an embodiment of the present invention includes a window 100, a touch panel 300, a display panel 500, a sensing panel 700, and a bracket 900.
The window 100 includes a light-transmitting portion 101 through which light provided by the display panel 500 is transmitted, and a light-shielding portion 102 adjacent to the light-transmitting portion 101. The window 100 is disposed at an upper side of the display panel 500. The window 100 may be made of materials including glass, sapphire, plastic, and the like.
The touch panel 300 is positioned between the window 100 and the display panel 500. The touch panel 300 may include an input sensing layer. The input sensing layer may operate using a resistive film method, a capacitive method, or an electromagnetic induction method, and acquire coordinate information of a point where a touch event occurs. The touch panel 300 is separately provided on the display panel 500 to be coupled with the display panel 500. However, the present invention is not limited thereto, and the touch panel 300 may be integrally formed on the display panel 500.
The display panel 500 is disposed at a lower side of the touch panel 300. The display panel 500 includes a display area AA and a non-display area NA. The display area AA is an area in which an image is displayed, and overlaps the light-transmitting portion 101 of the window 100. The non-display area NA is an area in which an image is not displayed, and is adjacent to the display area AA. The non-display area NA overlaps the light shielding portion 102 of the window 100.
In an embodiment, the display panel 500 may be a display panel including a self-light emitting device. In an example, the display panel 500 may be a display panel including an organic light emitting diode in which an emission layer is configured as an organic emission layer, or a display panel including a quantum dot light emitting diode in which an emission layer is configured as a quantum dot emission layer. Hereinafter, a case where the display panel 500 is a display panel including an organic light emitting diode will be described as an example.
The sensing panel 700 is located at the lower side of the display panel 500 and attached to the lower surface of the display panel 500 through a separate coupling layer (not shown). The coupling layer may be a transparent adhesive layer. In an example, the coupling layer may include an Optically Clear Adhesive (OCA), a Pressure Sensitive Adhesive (PSA), or an Optically Clear Resin (OCR).
The sensing panel 700 includes a sensing region SA and a non-sensing region NSA. The sensing area SA overlaps the display area AA. The sensing area SA may be an area including a plurality of optical fingerprint sensors and recognizing a fingerprint of a user. Sensing regions SA include first sensing region SA1 and second sensing region SA 2. The first sensing area SA1 may be an area occupying most of the sensing panel 700. The second sensing region SA2 is disposed adjacent to one side of the sensing panel 700 and has a smaller area than the first sensing region SA 1.
The non-sensing area NSA is an area surrounding the sensing area SA. The non-sensing area NSA may be an area in which a fingerprint of the user is not recognized. The non-sensing region NSA includes a first non-sensing region NSA1 and a second non-sensing region NSA 2. The first non-sensing area NSA1 is an area disposed along an edge of the display panel 500 (or the sensing panel 700), and overlaps the non-display area NA of the display panel 500. The second non-sensing area NSA2 is an area surrounding the second sensing area SA2, and overlaps at least a portion of the display area AA of the display panel 500.
The bracket 900 is located at the lower side of the sensing panel 700. The cradle 900 may fix and protect components of the display device 1000 (such as the touch panel 300, the display panel 500, the sensing panel 700, and other various components and circuits). For example, the bracket 900 may be configured as a coupling body including a synthetic resin material, a metal material, or a combination of different materials.
In various embodiments of the present invention, the display device 1000 further comprises an optical system 600 for constituting a light-sensitive fingerprint sensor. The optical system 600 is disposed between the display panel 500 and the sensing panel 700 in the form of a separate film or panel. However, the present invention is not limited thereto. For example, at least a portion of the optical system 600 may be integrally formed with the display panel 500. In an exemplary embodiment, the display panel 500 may be a display panel integrated with an optical system including a pinhole array layer.
Fig. 2 is a plan view schematically showing a display apparatus according to an embodiment of the present invention. More specifically, fig. 2 is a diagram schematically showing a display panel 500 provided in the display apparatus 1000, a sensing panel 700 provided on the bottom of the display panel 500, and a driving circuit 200 for driving the display panel 500 and the sensing panel 700. For convenience of description, a case where the display panel 500 and the sensing panel 700 are separated from the driving circuit 200 is illustrated in fig. 2, but the present invention is not limited thereto. For example, all or part of the driving circuit 200 may be integrally implemented on the display panel 500 or the sensing panel 700.
Referring further to fig. 2 in conjunction with fig. 1, the display apparatus 1000 includes a display panel 500, a sensing panel 700, and a driving circuit 200. For convenience of description, only the display panel 500 and the sensing panel 700 are illustrated in fig. 2, unlike the display apparatus 1000 illustrated in fig. 1.
As described above, the display panel 500 includes the display area AA and the non-display area NA. The display area AA is an area in which a plurality of pixels PXL are disposed, and may be referred to as an active area. In various embodiments, each of the pixels PXL may include at least one light emitting device. The display apparatus 1000 drives the pixels PXL corresponding to image data input from the outside, thereby displaying an image in the display area AA.
The non-display area NA is an area disposed at the periphery of the display area AA, and may be referred to as a non-active area. In various embodiments, the non-display area NA may generally represent other areas on the display panel 500 than the display area AA. In an embodiment, the non-display area NA may include a line area, a pad area, various types of dummy areas, and the like.
The sensing panel 700 includes a sensing region SA and a non-sensing region NSA. The sensing area SA may include at least some of the pixels PXL set in the display area AA. The sensing area SA may be an area for recognizing a fingerprint of a user. In an exemplary embodiment, the sensing area SA includes a plurality of first light sensors PHS1 and a plurality of second light sensors PHS 2. The light sensor may also be referred to as a photosensitive sensor or a photosensor.
Sensing regions SA include first sensing region SA1 and second sensing region SA 2. Specifically, the first sensing area SA1 includes a first photosensor PHS1, and the second sensing area SA2 includes a second photosensor PHS 2. For example, the first light sensor PHS1 is disposed in the first sensing region SA1, and the second light sensor PHS2 is disposed in the second sensing region SA 2. The first sensing region SA1 has a wider area than that of the second sensing region SA 2. In addition, the first and second sensing regions SA1 and SA2 may be spaced apart from each other in a plane.
The first light sensor PHS1 and the second light sensor PHS2 of the sensing panel 700 may sense light emitted from the light source and then reflected by the finger of the user, and sense the fingerprint of the user by analyzing the reflected light. Hereinafter, a case where the first light sensor PHS1 and the second light sensor PHS2 are used for fingerprint sensing will be described as an example in the present invention. However, in various embodiments, the first light sensor PHS1 and the second light sensor PHS2 may be used to perform various functions (such as a touch sensor for sensing touch input or a biosensor for scanning the skin of a human body).
The first light sensor PHS1 and the second light sensor PHS2 may overlap at least some or all of the pixels PXL disposed in the sensing area SA, or may be disposed near the pixels PXL. For example, at least some or all of the first light sensor PHS1 and the second light sensor PHS2 may be disposed between the pixels PXL. Various embodiments of the arrangement relationship between the first and second light sensors PHS1 and PHS2 and the pixels PXL will be described in more detail with reference to fig. 3A to 3C.
In an embodiment in which the first light sensor PHS1 and the second light sensor PHS2 are disposed adjacent to the pixel PXL, the first light sensor PHS1 and the second light sensor PHS2 may use, as a light source, a light emitting device disposed in at least one pixel PXL disposed in the sensing region SA. Therefore, the first light sensor PHS1 and the second light sensor PHS2 together with the pixels PXL in the sensing area SA (particularly together with the light emitting devices provided in the pixels PXL) may constitute a light-sensitive type fingerprint sensor. When the display apparatus having the fingerprint sensor built therein is configured using the pixels PXL as the light source without any separate external light source, the thickness of the photosensitive type fingerprint sensor and the modules of the display apparatus having the photosensitive type fingerprint sensor can be reduced, and the manufacturing cost of the display apparatus can be reduced.
The sensing resolution of the first sensing area SA1 and the sensing resolution of the second sensing area SA2 may be different from each other. In other words, the arrangement densities (i.e., the number of photosensors per unit area) of the first photosensor PHS1 and the second photosensor PHS2 respectively included in the first sensing region SA1 and the second sensing region SA2 may be different from each other. For example, the first sensing region SA1 may be a low-resolution sensing region, and the second sensing region SA2 may be a high-resolution sensing region. The second photosensors PHS2 of the second sensing region SA2 may have a higher arrangement density than that of the first photosensors PHS1 of the first sensing region SA 1.
Although an example in which two sensing areas SA1 and SA2 are formed in the display area AA is shown in fig. 2, the present invention is not limited thereto. In other words, in various embodiments, three or more sensing regions arranged regularly or irregularly may be formed in the display area AA. Thus, the multiple sensing regions may have the same area or shape, or have different areas and shapes. Detailed embodiments related thereto will be described later.
Further, although an example in which the sensing area SA is formed in at least a portion of the display area AA is illustrated in fig. 2, the present invention is not limited thereto. In various embodiments, the display area AA and the sensing area SA may be disposed to at least partially overlap each other. In other words, areas in which no image is displayed may provide fingerprint recognition.
The non-sensing area NSA is an area disposed at the periphery of the sensing area SA. In an exemplary embodiment, the non-sensing area NSA may be an area in which light sensors such as the first light sensor PHS1 and the second light sensor PHS2 are not provided, so that no fingerprint recognition is performed in the non-sensing area NSA. As described with reference to fig. 1, the non-sensing region NSA includes the first non-sensing region NSA1 and the second non-sensing region NSA2, and the first non-sensing region NSA1 is disposed along an edge of the sensing panel 700. The first non-sensing region NSA1 may include a driver for driving the first light sensor PHS1 and the second light sensor PHS2 disposed in the sensing region SA, or may include a pad part for connecting the driver disposed at the outside.
The second non-sensing region NSA2 surrounds the second sensing region SA2 and is formed between the first sensing region SA1 and the second sensing region SA 2. For example, the first sensing region SA1 and the second sensing region SA2 are separated from each other by a second non-sensing region NSA 2. The second non-sensing region NSA2 may include a connection line for connecting the first light sensor PHS1 in the first sensing region SA1 and the second light sensor PHS2 in the second sensing region SA2, a signal line for transmitting a signal, and the like.
The driving circuit 200 may drive the display panel 500. For example, the drive circuit 200 may output a data signal corresponding to image data to the display panel 500, or output a drive signal for driving the first light sensor PHS1 and the second light sensor PHS2, and receive sense signals from the first light sensor PHS1 and the second light sensor PHS 2. The driving circuit 200 receiving the sensing signal may detect the shape of the fingerprint of the user by using the sensing signal.
In the display apparatus 1000, the display panel 500 and the sensing panel 700 may be electrically connected to the driving circuit 200. Although the case where the driving circuit 200 is separated from the display panel 500 and the sensing panel 700 is shown for convenience of description, the driving circuit 200 may be directly disposed on the display panel 500 or the sensing panel 700.
The driving circuit 200 includes a panel driver 210 and a fingerprint detector 220. Although the case where the panel driver 210 and the fingerprint detector 220 are separated from each other is illustrated in fig. 2, the present invention is not limited thereto. In an exemplary embodiment, at least a portion of the fingerprint detector 220 may be integrated with the panel driver 210 or operate as part of the panel driver 210.
The panel driver 210 may supply a data signal corresponding to image data to the pixels PXL in the display area AA. The display panel 500 may display an image corresponding to the image data supplied from the panel driver 210.
In an embodiment, the panel driver 210 may supply a driving signal for fingerprint sensing to the pixels PXL. A driving signal may be provided to allow the pixel PXL to operate as a light source for the first light sensor PHS1 and the second light sensor PHS2 by emitting light. Accordingly, the driving signal for fingerprint sensing may be provided to the pixels PXL disposed in a specific area of the display panel 500 (e.g., the pixels PXL disposed in the sensing area SA). In various embodiments, the drive signal for fingerprint sensing may be provided by the fingerprint detector 220.
The fingerprint detector 220 may transmit a driving signal to the first light sensor PHS1 and the second light sensor PHS2 and detect the fingerprint of the user based on the sensing signals received from the first light sensor PHS1 and the second light sensor PHS 2.
In some embodiments, the driving circuit 200 may further include a main processor configured to receive the sensing signal detected from the fingerprint detector 220 and process the sensing signal when the detected fingerprint corresponds to the original fingerprint, or the like.
Fig. 3A to 3C are plan views illustrating various embodiments of an arrangement structure of pixels and photosensors. Fig. 3A to 3C show different embodiments of the relative size, resolution and arrangement relationship between at least one pixel PXL provided in the sensing area SA and the first light sensor PHS1 and the second light sensor PHS 2. The pixels PXL may be arranged in a matrix form having a plurality of rows and a plurality of columns all with a constant distance between two adjacent pixels.
Referring to fig. 3A, in the first sensing area SA1, the first photosensor PHS1 may be arranged with a resolution (density) equal to that of the pixels PXL. In other words, the first photo sensors PHS1 may be arranged in the first sensing area SA1 in a number equal to the number of pixels PXL. Therefore, the pixel PXL and the first light sensor PHS1 may be arranged to form a one-to-one pair. In the embodiment shown in fig. 3A, the pixel PXL and the first light sensor PHS1 are arranged to overlap each other. In this case, the arrangement density of the first light sensors PHS1 may be the same as that of the pixels PXL. However, the present invention is not limited thereto. In an exemplary embodiment, the pixel PXL and the first light sensor PHS1 may be arranged not to overlap each other. In an exemplary embodiment, the pixel PXL and the first light sensor PHS1 may overlap each other only in a partial area. For example, the pixels PXL may overlap some of the first light sensors PHS1, but not overlap other first light sensors PHS 1.
Meanwhile, in the embodiment shown in fig. 3A, the first light sensor PHS1 has a size smaller than that of the pixel PXL, but the present invention is not limited thereto. In an exemplary embodiment, the first light sensor PHS1 may have a size equal to or larger than the size of the pixels PXL.
Referring to fig. 3B, in the first sensing area SA1, the first photosensor PHS1 may be arranged with a resolution lower than that of the pixels PXL. In other words, the first photo sensors PHS1, which is smaller in number than the pixels PXL, may be arranged in the first sensing area SA 1. In this case, the arrangement density of the first light sensors PHS1 may be smaller than that of the pixels PXL. Although an example in which one first light sensor PHS1 is disposed every four pixels PXL is shown in fig. 3B, the present invention is not limited thereto. When the first light sensor PHS1 is arranged with a resolution lower than that of the pixel PXL, some or all of the first light sensors PHS1 may be disposed so as to overlap the pixel PXL.
Referring to fig. 3C, in the second sensing area SA2, the second photosensor PHS2 may be arranged with a resolution higher than that of the pixels PXL. In other words, the second photo sensors PHS2, which is greater in number than the pixels PXL, may be arranged in the second sensing area SA 2. For example, the arrangement density of the second light sensor PHS2 may be greater than that of the pixels PXL.
Therefore, the second light sensor PHS2 may have a size smaller than that of the pixel PXL, as shown in fig. 3C. Further, when the second light sensor PHS2 is provided with a resolution higher than that of the pixel PXL, at least some of the second light sensors PHS2 may be disposed so as not to overlap the pixel PXL, or all of the second light sensors PHS2 may be disposed so as not to overlap the pixel PXL.
As described above, in the first sensing area SA1, the first photosensor PHS1 may be provided with a resolution equal to or lower than that of the pixels PXL. Further, in the second sensing area SA2, the second photosensor PHS2 may be provided with a resolution higher than that of the pixels PXL. In other words, the second light sensors PHS2 in the second sensing region SA2 may have a higher arrangement density than that of the first light sensors PHS1 in the first sensing region SA 1. However, the arrangement density of the first light sensors PHS1 and the arrangement density of the second light sensors PHS2 are not limited thereto. In an exemplary embodiment, the first light sensor PHS1 may be arranged to have a higher arrangement density than that of the pixels PXL, and may be arranged to have a lower arrangement density than that of the second light sensor PHS 2.
In various embodiments of the present invention, the arrangement structure of the pixels PXL and the first and second light sensors PHS1 and PHS2 is not limited to the arrangement structure described above. In other words, the shape, relative size, number, resolution, and the like of the pixels PXL and the first and second photo sensors PHS1 and PHS2 in the sensing area SA may be variously changed within the scope of the present invention.
Further, although an example in which the first light sensor PHS1 and the second light sensor PHS2 are regularly arranged in the sensing region SA is shown in fig. 3A to 3C, the present invention is not limited thereto. In an exemplary embodiment, the first light sensor PHS1 and the second light sensor PHS2 may be irregularly arranged in the sensing area SA.
Fig. 4 is a circuit diagram showing an example of the pixel shown in fig. 2. For convenience of description, an active pixel, which is connected to an ith (i is a natural number) scan line Si disposed on an ith horizontal pixel column and a jth (j is a natural number) data line Dj disposed on a jth vertical pixel column and includes two transistors, is shown in fig. 4. However, in the present invention, the structure of the pixel PXL is not limited to the structure shown in fig. 4.
Referring to fig. 4, the pixel PXL according to the embodiment of the invention includes a first transistor M1, a second transistor M2, a capacitor C, and a light emitting device EL. The light emitting device EL may be an Organic Light Emitting Diode (OLED).
The first transistor M1 is connected to the j-th data line Dj and the first node N1, and the gate electrode of the first transistor M1 is connected to the i-th scan line Si. When a scan signal having a gate-on voltage (e.g., a low voltage) is supplied from the ith scan line Si, the first transistor M1 is turned on. When the first transistor M1 is turned on, the j-th data line Dj and the first node N1 may be electrically connected to each other.
The second transistor M2 is connected between the first power source ELVDD and the light emitting device EL, and the gate electrode of the second transistor M2 is connected to the first node N1. The second transistor M2 controls the amount of current supplied from the first power source ELVDD to the second power source ELVSS via the light emitting device EL in correspondence with the voltage of the first node N1. In various embodiments, the first power source ELVDD may be a high potential pixel power source, and the second power source ELVSS may be a low potential pixel power source.
The capacitor C is connected between the first power source ELVDD and the first node N1. The capacitor C may store a voltage corresponding to the data signal supplied to the first node N1.
The light emitting device EL is connected between the second transistor M2 and the second power source ELVSS. The light emitting device EL may emit light having a luminance corresponding to the current controlled by the second transistor M2.
Fig. 5 is a plan view schematically illustrating a sensing panel according to an embodiment of the present invention.
Referring to fig. 5, the sensing panel 700 includes a base substrate 710, a first light sensor PHS1, a second light sensor PHS2, a fingerprint detector 220, and a plurality of signal lines SC1, SC2, and RO disposed on the base substrate 710.
The base substrate 710 may be made of an insulating material such as glass, quartz, or polymer resin, and provides a space in which components of the sensing panel 700 are disposed. The base substrate 710 may be a rigid substrate or a flexible substrate.
The first light sensor PHS1 may be located in the first sensing region SA1, and the second light sensor PHS2 may be located in the second sensing region SA 2. The first light sensor PHS1 and the second light sensor PHS2 may be arranged on the base substrate 710 while forming rows and columns at a certain distance.
The first light sensor PHS1 may have a lower arrangement density than that of the second light sensor PHS 2. In other words, the number of the first light sensors PHS1 disposed within the same area may be smaller than the number of the second light sensors PHS2 disposed within the same area. Further, each of the first light sensors PHS1 has a first width WPHS1, the first width wpphs 1 being wider than a second width WPHS2 of each of the second light sensors PHS 2. In other words, each of the first light sensors PHS1 may have a size larger than that of each of the second light sensors PHS 2. For example, first width WPHS1 may be from about 30 μm to about 100 μm, and second width WPHS2 may be from about 0.1 μm to about 10 μm. The term "about" may reflect a deviation in size when the first light sensor PHS1 and the second light sensor PHS2 are formed without significantly changing the operation, function, and/or structure of the first light sensor PHS1 and the second light sensor PHS 2. For example, deviations from about 0% -5% of the listed values can be considered to be within the listed ranges.
The fingerprint detector 220 is disposed in the first non-sensing area NSA1 of the sensing panel 700. The fingerprint detector 220 includes a first vertical fingerprint detector 221v, a second vertical fingerprint detector 222v and a horizontal fingerprint detector 220 h.
The first and second vertical fingerprint detectors 221v and 222v are formed adjacent to one long side of the base substrate 710 and are disposed in a vertical direction (i.e., a direction parallel to the one long side). For example, the first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v are formed along one long side of the base substrate 710. However, the present invention is not limited thereto. In an exemplary embodiment, the first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v may be formed along opposite long sides of the base substrate 710. The horizontal fingerprint detector 220h is formed adjacent to one short side of the base substrate 710 and is disposed in the horizontal direction (i.e., the direction perpendicular to the one long side).
The first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v may transmit driving signals to the first light sensor PHS1 and the second light sensor PHS 2. The first vertical fingerprint detector 221v may transmit a driving signal to the first light sensor PHS1, and the second vertical fingerprint detector 222v may transmit a driving signal to the second light sensor PHS 2. The drive signals for driving the first light sensor PHS1 and the second light sensor PHS2 may be different from each other. For example, the number of kinds of drive signals for driving the second light sensor PHS2 may be larger than the number of kinds of drive signals for driving the first light sensor PHS 1.
The first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v may be formed separately, as shown in fig. 5. However, the present invention is not limited thereto. In an exemplary embodiment, the first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v may be integrated into one vertical fingerprint detector.
The first vertical fingerprint detector 221v and the second vertical fingerprint detector 222v may be connected to a plurality of driving signal lines SC1 and SC2 for transmitting driving signals.
The driving signal lines SC1 and SC2 may be disposed on the base substrate 710 and disposed to extend in a horizontal direction. In other words, the driving signal lines SC1 and SC2 may be disposed along the row of the first photosensor PHS1 and the second photosensor PHS 2.
The driving signal lines SC1 and SC2 may include a first driving signal line SC1 and a second driving signal line SC 2. The first vertical fingerprint detector 221v and the first light sensor PHS1 may be electrically connected through a first driving signal line SC 1. The second vertical fingerprint detector 222v and the second light sensor PHS2 may be electrically connected through a second driving signal line SC 2.
The horizontal fingerprint detector 220h may receive sensing signals from the first light sensor PHS1 and the second light sensor PHS2, and may include an analog-to-digital converter (ADC) for converting the received sensing signals into digital signals, an amplifier for amplifying the sensing signals, and a noise reduction device for removing noise of the sensing signals. In addition, the horizontal fingerprint detector 220h may further include a signal transmission part for transmitting the signal-processed sensing signal to another component (e.g., a main processor).
In the embodiment described above and the embodiment to be described below, although the case where the horizontal fingerprint detector 220h is electrically connected to the first light sensor PHS1 and the second light sensor PHS2 is shown, the present invention is not limited thereto. In some embodiments, the sensing panel 700 may include a first horizontal fingerprint detector connected to the first light sensor PHS1 and a second horizontal fingerprint detector connected to the second light sensor PHS 2. The first horizontal fingerprint detector may not be electrically connected to the second light sensor PHS2, and the second horizontal fingerprint detector may not be electrically connected to the first light sensor PHS 1.
The horizontal fingerprint detector 220h may be connected to a plurality of detection signal lines RO for receiving the sensing signal. The detection signal line RO may be disposed on the base substrate 710 and disposed to extend in a vertical direction. In other words, the detection signal line RO may be disposed substantially along the columns of the first light sensor PHS1 and the second light sensor PHS2, and may be orthogonal in plane to the drive signal lines SC1 and SC2 disposed along the rows of the first light sensor PHS1 and the second light sensor PHS 2.
The detection signal line RO may be connected to the first light sensor PHS1 and the second light sensor PHS 2. The first light sensor PHS1 and the second light sensor PHS2 disposed on the same column may be electrically connected to one of the detection signal lines RO. For example, the first light sensor PHS1 of the n-th (n is a natural number) column and the second light sensor PHS2 of the n-th column among the first light sensor PHS1 and the second light sensor PHS2 arranged in a plurality of columns may be electrically connected by one detection signal line RO.
The detection signal lines RO disposed in the first sensing region SA1 and the detection signal lines RO disposed in the second sensing region SA2 may be connected to each other in the second non-sensing region NSA 2. Since the arrangement density of the first light sensors PHS1 and the arrangement density of the second light sensors PHS2 are different from each other, the detection signal lines RO in the first sensing area SA1 and the detection signal lines RO in the second sensing area SA2 may have different arrangement densities. Accordingly, the detection signal line RO may include a bent portion in the second non-sensing region NSA2 to connect the detection signal line RO disposed in the first sensing region SA1 and the detection signal line RO disposed in the second sensing region SA2 to each other.
Although not shown for convenience of description, the fingerprint detector 220 may further include a power supplier (not shown) for supplying power to the first light sensor PHS1 and the second light sensor PHS 2. The power supply may be disposed in the first non-sensing region NSA 1. For example, the power supply may be disposed adjacent to one short side of the base substrate 710. The power supplier may supply power to the first light sensor PHS1 and the second light sensor PHS2 through power lines (not shown) provided on the base substrate 710.
Hereinafter, the operation principle of each of the first light sensor PHS1 and the second light sensor PHS2 will be described in detail with further reference to fig. 6 and 7 by a circuit diagram of the first light sensor PHS1 and a circuit diagram of the second light sensor PHS 2.
Fig. 6 is a circuit diagram of a first photosensor according to an embodiment of the present invention. Fig. 7 is a circuit diagram of a second photosensor according to an embodiment of the present invention. Fig. 6 and 7 show circuit diagrams of any of a plurality of photosensors.
Referring to fig. 6, the first photosensor PHS1 includes a first photoelectric device PD1 and a switching transistor ST 1. The first photo sensor PHS1 may be disposed on the pth first photo sensor row to be connected to the pth first driving signal line SC1p, and may be disposed on the mth first photo sensor column to be connected to the mth detection signal line ROr.
The first opto-electronic device PD1 may be a silicon based photodiode such as a PN type photodiode, a PIN type photodiode, a schottky diode, or an avalanche diode. Hereinafter, a case where the first photoelectric device PD1 is implemented with a PIN type photodiode is described.
The first photo sensor PHS1 according to the present embodiment includes a transistor (1T) -diode (1D) structure including a switching transistor ST1 and a first photoelectric device PD 1.
The first light sensor PHS1 may generate an electrical signal corresponding to light reflected by the ridges of a fingerprint or generate an electrical signal corresponding to light reflected by the valleys between the ridges of a fingerprint. The amount of light sensed by the first photoelectric device PD1 may vary depending on the shape of the fingerprint.
One electrode of the switching transistor ST1 is connected to the first photoelectric device PD1, the other electrode of the switching transistor ST1 is connected to the r-th detection signal line ROr, and the gate electrode of the switching transistor ST1 is connected to the p-th first driving signal line SC1 p. When the light L reflected by the fingerprint is incident on the first photoelectric device PD1, a voltage may be generated in the first photoelectric device PD1 according to the amount of the light L.
The amount of drain current passing through the channel of the switching transistor ST1 may vary depending on the voltage generated in the first photoelectric device PD 1. When a driving signal is applied through the pth first driving signal line SC1p, the switching transistor ST1 may be turned on, and a sensing signal may be detected through the r-th detection signal line ROr connected to the other electrode of the switching transistor ST 1. The sensing signal may include brightness information or image information of the fingerprint, and it is determined whether the region corresponding to the first light sensor PHS1 is a ridge or a valley of the fingerprint through a processing operation on the electrical signal. The entire fingerprint image may be configured by combining information determined by the arranged first light sensor PHS 1.
Referring to fig. 7, the second photo sensor PHS2 may include a plurality of transistors Tx, Rx, Dx and Sx and a second photo device PD 2. The second photo sensor PHS2 may be disposed on the qth second photo sensor row to be connected to the qth second driving signal line SC2q, and disposed at the r-th
The second photo sensor column is connected to the r-th detection signal line ROr.
The four transistors Tx, Rx, Dx, and Sx include a transfer transistor Tx which transfers signal charges generated in the second photoelectric device PD2 to the floating diffusion region FD, a reset transistor Rx which periodically resets the charges stored in the floating diffusion region FD, a drive transistor Dx which serves as a source follower buffer amplifier and buffers signals according to the charges stored in the floating diffusion region FD, and a selection transistor Sx which performs a switching function and an addressing function for selecting the second photosensor PHS 2.
The first signal line RSq may be connected to the gate electrode of the reset transistor Rx. When a reset signal is applied through the first signal line RSq, the reset transistor Rx may be turned on, and a reset voltage may be applied from the power line VB, so that the voltage stored in the floating diffusion region FD is reset.
The second signal line TGq may be connected to the gate electrode of the transfer transistor Tx. When a driving signal is applied through the second signal line TGq, the transfer transistor Tx may be turned on, and a sensing signal sensed by the second photoelectric device PD2 may be stored in the floating diffusion region FD.
The floating diffusion region FD may be connected to the gate electrode of the driving transistor Dx. The driving transistor Dx may be turned on according to the voltage of the floating diffusion FD. The magnitude of the current passing through the driving transistor Dx may vary depending on the magnitude of the voltage.
The third signal line SELq may be connected to the gate electrode of the selection transistor Sx. When a selection signal is applied through the third signal line SELq, a current passing through the driving transistor Dx may pass through the selection transistor Sx.
The r-th detection signal line ROr may be connected to one electrode of the selection transistor Sx. The magnitude of the voltage stored in the floating diffusion region FD varies depending on the amount of light L incident on the second photoelectric device PD2, and the magnitude of the current passing through the driving transistor Dx and the selection transistor Sx varies depending on the magnitude of the voltage of the floating diffusion region FD. The current passing through the selection transistor Sx may be transmitted to the fingerprint detector 220 shown in fig. 2 through the r-th detection signal line ROr.
The configuration of the second light sensor PHS2 is not limited to this. In an exemplary embodiment, the second light sensor PHS2 may include a larger number of transistors than in the above-described embodiments, or include a smaller number of transistors than in the above-described embodiments.
The first light sensor PHS1 shown in fig. 6 and the second light sensor PHS2 shown in fig. 7 may be electrically connected by the same r-th detection signal ROr.
As described above, in the present embodiment, the first light sensor PHS1 may be a Thin Film Transistor (TFT) image sensor having a 1T-1D (one transistor-one diode) structure, and the second light sensor PHS2 may be a CMOS Image Sensor (CIS) including a Complementary Metal Oxide Semiconductor (CMOS).
FIG. 8 is a cross-sectional view of the sensing panel taken along line A-A' shown in FIG. 5.
Referring to fig. 8, the sensing panel 700 includes a base substrate 710, a first light sensor PHS1 and a second light sensor PHS2 provided on the base substrate 710.
The first light sensor PHS1 may include a thin film transistor and a first opto-electronic device PD1 electrically connected to the thin film transistor.
A thin film transistor may be formed on one surface of the base substrate 710. The thin film transistor may include an active layer 721, a gate electrode 722, a first electrode 751, and a second electrode 752.
Although a case where the thin film transistor is formed in an upper gate (top gate) type in which the gate electrode 722 is positioned on top of the active layer 721 is illustrated in fig. 8, the present invention is not limited thereto. In an exemplary embodiment, the thin film transistor may be formed in a lower gate (bottom gate) type in which the gate electrode 722 is positioned on the bottom of the active layer 721, or in a dual gate type in which the gate electrode 722 is positioned on both the top and bottom of the active layer 721.
The active layer 721 is formed on the base substrate 710. The active layer 721 may include polycrystalline silicon, single crystalline silicon, low temperature polycrystalline silicon, amorphous silicon, or an oxide semiconductor. For example, the oxide semiconductor may include a binary compound (AB) containing indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), or the likex) Ternary compounds (AB)xCy) Or quaternary compounds (AB)xCyDz) And the like. For example, the active layer 721 may include ITZO (including oxides of indium, tin, and titanium) or IGZO (including oxides of indium, gallium, and tin).
A first insulating layer 730 is formed on the active layer 721. The first insulating layer 730 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.
The gate electrode 722 is formed over the first insulating layer 730. The gate electrode 722 may be formed in a single layer or a multilayer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or any alloy thereof.
An interlayer insulating layer 740 is formed on the gate electrode 722. The interlayer insulating layer 740 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.
A first electrode 751 and a second electrode 752 are formed on the interlayer insulating layer 740. Each of the first electrode 751 and the second electrode 752 is connected to the active layer 721 through a contact hole penetrating the first insulating layer 730 and the interlayer insulating layer 740. Each of the first and second electrodes 751 and 752 may be formed in a single layer or a multi-layer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or any alloy thereof. In an embodiment, the first electrode 751 may be a source electrode of a thin film transistor, and the second electrode 752 may be a drain electrode of the thin film transistor.
The first photoelectric device PD1 may be disposed on any one of the first electrode 751 and the second electrode 752. For example, a first photoelectric device PD1 is disposed on the first electrode 751.
The first photoelectric device PD1 may include a plurality of semiconductor layers sequentially stacked in the thickness direction of the base substrate 710. Specifically, the first photoelectric device PD1 may include a P-type semiconductor layer doped with a P-type impurity, an intrinsic semiconductor layer joined with the P-type semiconductor layer, and an N-type semiconductor layer joined with the intrinsic semiconductor layer and doped with an N-type impurity. In other words, the first photoelectric device PD1 may be a PIN type photodiode.
A second insulating layer 760 is formed on the first electrode 751, the second electrode 752 and the first photoelectric device PD1, the second insulating layer 760 serving to insulate the thin film transistor from the first photoelectric device PD1 and protect the thin film transistor from the first photoelectric device PD 1. The second insulating layer 760 may be formed of an inorganic layer such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. However, the present invention is not limited thereto. In an exemplary embodiment, the second insulating layer 760 may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin.
A third electrode 771 and a fourth electrode 772 are formed on the second insulating layer 760. Third electrode 771 is electrically connected to first photoelectric device PD1 through a contact hole penetrating second insulating layer 760. The fourth electrode 772 is electrically connected to the second electrode 752 of the thin film transistor through a contact hole penetrating the second insulating layer 760.
However, the present invention is not limited thereto. When the first photoelectric device PD1 is formed on the second electrode 752 according to the configuration, the third electrode 771 may be electrically connected to the first electrode 751, and the fourth electrode 772 may be electrically connected to the first photoelectric device PD 1.
Each of the third electrode 771 and the fourth electrode 772 may be formed in a single layer or a multi-layer made of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or any alloy thereof.
The second light sensor PHS2 may be provided on any one of the third electrode 771 and the fourth electrode 772. The second photo sensor PHS2 includes a circuit layer CC, a second opto-electronic device PD2, and a color filter layer CF.
The circuit layer CC may be a layer on which the four transistors and the signal lines described in fig. 7 are disposed. The circuit layer CC may be formed in a structure in which a plurality of metal layers and a plurality of insulating layers are stacked.
Similar to the first photoelectric device PD1, the second photoelectric device PD2 may be a device that generates an electrical signal from light incident thereon. The second photoelectric device PD2 may be a PIN type photodiode. The description of the second photoelectric device PD2 is similar to that of the first photoelectric device PD1, and therefore, a detailed description of the second photoelectric device PD2 will be omitted. The second photoelectric device PD2 may be disposed on the circuit layer CC and may be electrically connected to transistors and signal lines in the circuit layer CC.
In the present embodiment, a case where the second photo sensor PHS2 has a structure in which the second photoelectric device PD2 is provided on the circuit layer CC is described as an example. However, in another embodiment, the second photo sensor PHS2 may have a structure in which the circuit layer CC is provided on the second photoelectric device PD 2.
The color filter layer CF may be disposed on the second electro-optical device PD 2. The color filter layer CF allows light of a specific color to be transmitted therethrough, and may block transmission of light of other colors by absorbing light. Therefore, in addition to the brightness of the fingerprint image, the color of the fingerprint image may be recognized by the plurality of color filter layers CF disposed on the plurality of second light sensors PHS 2. The color filter layer CF may be continuously formed on the plurality of second photo sensors PHS 2. For example, the color filter layer CF may be a Bayer (Bayer) filter having an area ratio of a red filter, a blue filter, and a green filter of 1:1: 2.
Although not shown in the drawings, a lens layer may be further disposed on the color filter layer CF. The lens layer may concentrate light incident from the outside on the second photoelectric device PD2, and increase the sensing sensitivity of the second light sensor PHS2 by increasing the light absorption rate of the second photoelectric device PD 2.
The third electrode 771, the fourth electrode 772, and the second light sensor PHS2 may be provided thereon with a protective layer 780 for protecting the sensing panel 700. The protective layer 780 may include an organic material, and may be formed of an organic layer such as an acrylic resin, an epoxy resin, a phenolic resin, a polyamide resin, or a polyimide resin. The protective layer 780 can play a role of planarizing a step difference caused by the first light sensor PHS1 and the second light sensor PHS2 on the base substrate 710.
As described above, the second light sensor PHS2 may have a size smaller than that of the first light sensor PHS 1. For example, the width WPHS1 of the first light sensor PHS1 per unit sensor may be about 30 μm to about 100 μm, and the width WPHS2 of the second light sensor PHS2 per unit sensor may be about 0.1 μm to about 10 μm.
In other words, the second light sensor PHS2 is formed smaller than the first light sensor PHS1, and therefore the degree of integration of the light sensors can be improved. Therefore, a larger number of the second light sensors PHS2 can be provided in the same area, and high-resolution fingerprint sensing can be performed.
As shown in fig. 2, the second sensing area SA2 is an area requiring high resolution in the sensing panel 700, and the second light sensor PHS2 having a small size may be disposed in the second sensing area SA 2. Further, the first light sensor PHS1 may be disposed in the first sensing region SA1 occupying most of the sensing panel 700. When the fingerprint of the user is registered using the second light sensor PHS2 of the second sensing area SA2 as a high-resolution fingerprint identification area at the time of first registering the fingerprint of the user, the accuracy in the subsequent identification process can be greatly improved. Further, the second light sensor PHS2 including the color filter layer CF can recognize colors. Therefore, the second light sensor PHS2 may be used as a biosensor for sensing human body information such as scalp, hair, or skin in addition to the fingerprint of the user.
Fig. 9 is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention. Fig. 10 is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention. The embodiment of fig. 9 and 10 differs from the embodiment described above in that: the sensing panel 700 is formed with three or more sensing regions thereon, and other configurations are the same as or similar to those of the above-described embodiments. Hereinafter, the differences will be mainly described.
Referring to fig. 9, the sensing panel 700_1 includes a sensing region SA _1 and a non-sensing region NSA _1, and the sensing region SA _1 includes a first sensing region SA1a _1, a second sensing region SA2_1 and a third sensing region SA1b _ 1. The non-sensing region NSA _1 includes a first non-sensing region NSA1 and a second non-sensing region NSA2_ 1.
The first sensing area SA1a _1 and the third sensing area SA1b _1 may be areas including the first light sensor PHS 1. Specifically, the first sensing region SA1a _1 is formed adjacent to one short side of the sensing panel 700_1, and the third sensing region SA1b _1 is formed adjacent to the other short side of the sensing panel 700_ 1. The first and third sensing regions SA1a _1 and SA1b _1 are spaced apart from each other.
The second sensing area SA2_1 is an area including the second light sensor PHS 2. Specifically, the second sensing region SA2_1 is disposed between the first sensing region SA1a _1 and the third sensing region SA1b _ 1. The second sensing region SA2_1 may be formed in a central portion of the sensing panel 700_ 1. The second sensing region SA2_1 may have an area smaller than an area of each of the first sensing region SA1a _1 and the third sensing region SA1b _ 1.
The second non-sensing region NSA2_1 may be a region excluding the first light sensor PHS1 and the second light sensor PHS 2. The second non-sensing area NSA2_1 is formed to surround the second sensing area SA2_ 1. In addition, the second non-sensing region NSA2_1 is formed between the first sensing region SA1a _1 and the second sensing region SA2_1, and is formed between the second sensing region SA2_1 and the third sensing region SA1b _ 1. The second non-sensing region NSA2_1 may include a signal line connecting the first photosensor PHS1 in the first sensing region SA1a _1 and the second photosensor PHS2 in the second sensing region SA2_1, and include a signal line connecting the first photosensor PHS1 in the third sensing region SA1b _1 and the second photosensor PHS2 in the second sensing region SA2_ 1.
Referring to fig. 10, the sensing panel 700_2 includes a sensing region SA _2 and a non-sensing region NSA _2, and the sensing region SA _2 includes a first sensing region SA1_2, a second sensing region SA2_2a and a third sensing region SA2_2 b. The non-sensing region NSA _2 includes a first non-sensing region NSA1, a second non-sensing region NSA2_2a, and a third non-sensing region NSA2_2 b.
The first sensing area SA1_2 may be an area including the first light sensor PHS 1. The first sensing region SA1_2 is formed at a central portion of the sensing panel 700_2 and has the widest area among the sensing regions SA1_2, SA2_2a, and SA2_2b formed in the sensing panel 700_ 2. The first sensing region SA1_2 is formed between the second sensing region SA2_2a and the third sensing region SA2_2 b.
The second sensing area SA2_2a and the third sensing area SA2_2b may be areas including the second light sensor PHS 2. Specifically, the second sensing region SA2_2a is formed adjacent to one short side of the sensing panel 700_ 2. The third sensing area SA2_2b is formed adjacent to the other short side of the sensing panel 700_ 2. Each of the second and third sensing regions SA2_2a and SA2_2b has an area smaller than that of the first sensing region SA1_ 2. In addition, the sum of the area of the second sensing region SA2_2a and the area of the third sensing region SA2_2b may be smaller than the area of the first sensing region SA1_ 2.
The second non-sensing region NSA2_2a and the third non-sensing region NSA2_2b may be regions excluding the first light sensor PHS1 and the second light sensor PHS 2. The second non-sensing area NSA2_2a is formed to surround the second sensing area SA2_2 a. In addition, the third non-sensing area NSA2_2b is formed to surround the third sensing area SA2_2 b.
The second non-sensing region NSA2_2a is formed between the first sensing region SA1_2 and the second sensing region SA2_2 a. The second non-sensing region NSA2_2a may include a signal line connecting the first photosensor PHS1 in the first sensing region SA1_2 and the second photosensor PHS2 in the second sensing region SA2_2 a. In addition, the third non-sensing region NSA2_2b may be formed between the first sensing region SA1_2 and the third sensing region SA2_2 b. The third non-sensing region NSA2_2b may include a signal line connecting the first photosensor PHS1 in the first sensing region SA1_2 and the second photosensor PHS2 in the third sensing region SA2_2 b.
Fig. 11A is a schematic plan view of a sensing panel according to an exemplary embodiment of the present invention. Fig. 11B is a side view of the sensing panel shown in fig. 11A. The embodiment shown in fig. 11A and 11B differs from the embodiment shown in fig. 5 in that: the second light sensor is integrated with the fingerprint detector to constitute a light sensor module and the second light sensor is attached to the base substrate, and the other configuration is the same as or similar to that of the embodiment shown in fig. 5.
Therefore, the differences will be mainly described.
Referring to fig. 11A and 11B, the sensing panel 700_3 includes a base substrate 710, first and second light sensors PHS1 and PHS2 disposed on the base substrate 710, a fingerprint detector 220, and various signal lines SC1, SC2, and RO. The fingerprint detector 220 includes a first vertical fingerprint detector 221v, a second vertical fingerprint detector 222v _3 and a horizontal fingerprint detector 220h _ 3.
The first light sensor PHS1 is disposed in the first sensing region SA1 and is electrically connected to the first vertical fingerprint detector 221v disposed in the first non-sensing region NSA1 through a first driving signal line SC 1. The location of the first vertical fingerprint detector 221v is not limited to the first non-sensing area NSA 1. In some embodiments, the first vertical fingerprint detector 221v may be disposed in the first sensing area SA 1.
The second light sensor PHS2 is disposed in the second sensing area SA 2. The first photosensor PHS1 disposed in the first sensing region SA1 and the second photosensor PHS2 disposed in the second sensing region SA2 may be electrically connected through a signal line layer ECL disposed on the base substrate 710. For example, the signal line layer ECL may be a circuit layer including at least one of the first driving signal line SC1, the second driving signal line SC2, and the detection signal line RO.
The second light sensor PHS2 together with the second vertical fingerprint detector 222v _3 and the horizontal fingerprint detector 220h _3 disposed in the second sensing region SA2 may constitute a light sensor module LSM. In an embodiment, the second light sensor PHS2, the second vertical fingerprint detector 222v _3, and the horizontal fingerprint detector 220h _3 may be integrated into one Integrated Circuit (IC) to constitute the light sensor module LSM.
The light sensor module LSM including the second light sensor PHS2 may be provided on the base substrate 710 and attached to the base substrate 710 by an adhesive member ADH. The adhesive member ADH may include, for example, an Anisotropic Conductive Film (ACF). Further, the light sensor module LSM may be attached to the signal line layer ECL to be electrically connected to the first light sensor PHS 1.
As described above, the horizontal fingerprint detector 220h _3 of the light sensor module LSM may be connected to both the first light sensor PHS1 and the second light sensor PHS2, but the present invention is not limited thereto. In some embodiments, the horizontal fingerprint detector 220h _3 of the light sensor module LSM may be connected to the second light sensor PHS2, and may not be electrically connected to the first light sensor PHS 1. The first light sensor PHS1 may receive a detection signal applied by a separate horizontal fingerprint detector.
In the fingerprint sensor and the display device including the fingerprint sensor according to the present invention, the low resolution fingerprint sensor may be completely disposed on the display panel, and the high resolution fingerprint sensor may be disposed in an area requiring high resolution, so that the manufacturing cost of the display device may be reduced.
Further, in the fingerprint sensor and the display device including the fingerprint sensor according to the present invention, a fingerprint can be sensed at high resolution by the high resolution fingerprint sensor, and the fingerprint sensor can be used as a biosensor for sensing human body information such as pores and scalp.
Exemplary embodiments have been disclosed herein, and although specific terms are employed, they are used and are to be interpreted in a generic and descriptive sense only and not for purposes of limitation. In some instances, features, characteristics and/or elements described in connection with a particular embodiment may be used alone, or in combination with features, characteristics and/or elements described in connection with other embodiments, as will be apparent to those of ordinary skill in the art upon submission of the present application, unless explicitly stated otherwise. It will, therefore, be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as set forth in the appended claims.

Claims (20)

1. A fingerprint sensor, comprising:
a base substrate including a first sensing region and a second sensing region;
a plurality of first light sensors disposed on the base substrate in the first sensing region; and
a plurality of second light sensors disposed in the second sensing region on the base substrate,
wherein the first sensing region has an area larger than that of the second sensing region, an
Wherein the plurality of second photo sensors have a higher arrangement density than that of the plurality of first photo sensors.
2. The fingerprint sensor of claim 1,
wherein each of the plurality of first light sensors has a width wider than a width of each of the plurality of second light sensors.
3. The fingerprint sensor according to claim 2,
wherein the width of each of the plurality of first photosensors is 30 to 100 μm, and the width of each of the plurality of second photosensors is 0.1 to 10 μm.
4. The fingerprint sensor of claim 1,
wherein each of the plurality of first photosensors comprises a switching transistor and a first optoelectronic device connected to one electrode of the switching transistor.
5. The fingerprint sensor according to claim 4,
wherein each of the plurality of second light sensors comprises a circuit layer, a second optoelectronic device disposed on the circuit layer, and a color filter layer and a lens layer, and the color filter layer and the lens layer are disposed on the second optoelectronic device.
6. The fingerprint sensor according to claim 5,
wherein each of the first and second optoelectronic devices is a silicon-based photodiode, an
Wherein each of the plurality of second photosensors is a complementary metal oxide semiconductor image sensor.
7. The fingerprint sensor of claim 1,
wherein the base substrate further comprises a first region surrounding the first and second sensing regions, an
Wherein no light sensor is disposed in the first region.
8. The fingerprint sensor of claim 7,
wherein the first and second sensing regions are spaced apart from each other, and the base substrate further comprises a second region between the first and second sensing regions, an
Wherein no light sensor is disposed in the second region.
9. The fingerprint sensor of claim 8, further comprising:
a fingerprint detector disposed on the base substrate, the fingerprint detector being disposed in the first region,
wherein the fingerprint detector comprises a vertical fingerprint detector disposed adjacent to a long side of the base substrate and a horizontal fingerprint detector disposed adjacent to a short side of the base substrate.
10. The fingerprint sensor of claim 9,
wherein the vertical fingerprint detector comprises a first vertical fingerprint detector and a second vertical fingerprint detector,
wherein the first vertical fingerprint detector is electrically connected to the plurality of first light sensors, an
Wherein the second vertical fingerprint detector is electrically connected to the plurality of second light sensors.
11. The fingerprint sensor of claim 10, further comprising:
a plurality of first driving signal lines, a plurality of second driving signal lines, and a plurality of detection signal lines, the plurality of first driving signal lines, the plurality of second driving signal lines, and the plurality of detection signal lines being disposed on the base substrate,
wherein the plurality of first drive signal lines are electrically connected to the first vertical fingerprint detector and the plurality of first light sensors,
wherein the plurality of second drive signal lines are electrically connected to the second vertical fingerprint detector and the plurality of second light sensors, an
Wherein the plurality of detection signal lines are electrically connected to the plurality of first light sensors, the plurality of second light sensors, and the horizontal fingerprint detector.
12. The fingerprint sensor of claim 8,
wherein the base substrate further comprises a third sensing region spaced apart from the first sensing region,
wherein the second sensing region is located between the first sensing region and the third sensing region, an
Wherein the third sensing region includes a plurality of third sensors identical to the plurality of first light sensors.
13. The fingerprint sensor of claim 8,
wherein the base substrate further comprises a fourth sensing region spaced apart from the second sensing region,
wherein the first sensing region is located between the second sensing region and the fourth sensing region, an
Wherein the fourth sensing region comprises a plurality of fourth sensors identical to the plurality of second light sensors.
14. The fingerprint sensor of claim 8, further comprising:
a fingerprint detector disposed on the base substrate,
wherein the fingerprint detector comprises a first vertical fingerprint detector electrically connected to the first plurality of light sensors and a second vertical fingerprint detector electrically connected to the second plurality of light sensors, an
Wherein the first vertical fingerprint detector is disposed in the first region and the second vertical fingerprint detector is disposed in the second sensing region.
15. The fingerprint sensor of claim 14, wherein the fingerprint detector comprises a horizontal fingerprint detector, and
wherein the horizontal fingerprint detector is disposed in the second sensing region and is electrically connected to the first and second plurality of light sensors.
16. The fingerprint sensor of claim 15, wherein the plurality of second light sensors, the second vertical fingerprint detector, and the horizontal fingerprint detector are integrated to form a light sensor module, and
wherein the light sensor module is attached to the base substrate.
17. A display device, comprising:
a display panel having a plurality of pixels formed therein; and
a fingerprint sensor disposed on the display panel,
wherein the fingerprint sensor comprises:
a base substrate including a first sensing region and a second sensing region;
a plurality of first light sensors disposed on the base substrate in the first sensing region; and
a plurality of second light sensors disposed in the second sensing region on the base substrate,
wherein the first sensing region has an area larger than that of the second sensing region, an
Wherein each of the plurality of first light sensors has a width wider than a width of each of the plurality of second light sensors.
18. The display device according to claim 17, wherein,
wherein the display panel includes a display area,
wherein the display area includes the plurality of pixels,
wherein the display area overlaps with the first and second sensing areas, an
Wherein an arrangement density of the plurality of second photo sensors is different from an arrangement density of the plurality of first photo sensors.
19. The display device according to claim 18, wherein the arrangement density of the plurality of second photosensors is larger than that of the plurality of pixels, and
wherein the arrangement density of the plurality of pixels is greater than the arrangement density of the plurality of first photosensors.
20. The display device according to claim 19, wherein each of the plurality of pixels includes a light emitting device,
wherein at least one of the plurality of first light sensors overlaps with a corresponding pixel of the plurality of pixels, an
Wherein at least one of the plurality of second light sensors overlaps a corresponding pixel of the plurality of pixels.
CN202010207707.5A 2019-03-27 2020-03-23 Fingerprint sensor and display device including the same Pending CN111753627A (en)

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