CN111751576B

CN111751576B - Atomic probe analysis method, atomic probe analysis device and recording medium

Info

Publication number: CN111751576B
Application number: CN201910236350.0A
Authority: CN
Inventors: 洪世玮
Original assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Current assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date: 2019-03-27
Filing date: 2019-03-27
Publication date: 2023-07-11
Anticipated expiration: 2039-03-27
Also published as: CN111751576A

Abstract

The present disclosure provides an atomic probe analysis method, an atomic probe analysis device and a recording medium. The method comprises the following steps: irradiating an atom probe comprising a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valence numbers in the mass spectrogram to obtain the proportion of the ions of each mass, and correcting the quantitative result of the ions of each mass.

Description

Atomic probe analysis method, atomic probe analysis device and recording medium

Technical Field

Embodiments of the present disclosure relate to an atomic probe analysis method, an atomic probe analysis device and a recording medium.

Background

In semiconductor manufacturing, quantitative analysis of the concentration of specific elements (e.g., phosphorus, arsenic, boron, etc.) is required for surface micro-contamination, doping, ion implantation, etc. of semiconductor devices, so as to control or adjust the process parameters, thereby maintaining the stability of device/epitaxy. For example, in the epitaxial (epi) process of silicon phosphide, quantitative analysis (quantification) of phosphorus is required.

One of the quantitative analysis techniques in the prior art is an atomic probe analysis technique (Atom Probe Tomography), but when some elements are quantitatively analyzed, the main signal source in the mass spectrogram obtained by analysis is formed by overlapping signals of multiple volumes of the same element, and as a result, the quantitative analysis result deviates from the actual magnitude.

Disclosure of Invention

Embodiments of the present disclosure provide an atomic probe analysis method suitable for an electronic device having a processor. The method comprises the following steps: irradiating an atom probe comprising a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and normalizing the count values of the mass-to-charge-state ratios (mass-to-charge ratios) corresponding to the ions with different valence numbers in the mass spectrogram to obtain the proportion of the ions of each volume, and correcting the quantitative result of the ions of each volume.

Embodiments of the present disclosure provide an atomic probe analysis apparatus including a connection apparatus and a processor. Wherein the connecting device is used for connecting the pulse laser and the mass spectrometer. The processor is coupled to the connection device and configured to irradiate an atom probe comprising a test sample with a pulsed laser, analyze ions ejected from a surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of volumes of an element and have a plurality of valencies, and normalize count values of corresponding mass-to-charge ratios of ions of different valencies for each volume in the mass spectrum to obtain a proportion of ions for each volume, and correct a quantification of ions for each volume.

Embodiments of the present disclosure provide a computer readable recording medium for recording a program loaded by a processor to execute: irradiating an atom probe comprising a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valence numbers in the mass spectrogram to obtain the proportion of the ions of each mass, and correcting the quantitative result of the ions of each mass.

Drawings

Aspects of the disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawing figures. It should be noted that the various features are not drawn to scale in accordance with standard practices in the industry. Indeed, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1 is a block diagram of an atomic probe analysis apparatus according to an embodiment of the present disclosure.

Fig. 2 is a flow chart of an atomic probe analysis method according to an embodiment of the present disclosure.

Fig. 3 is a mass spectrum of a phosphorous ion according to an embodiment of the present disclosure.

Fig. 4 is a flow chart of an atomic probe analysis method according to an embodiment of the present disclosure.

FIG. 5 is a graph comparing quantitative analysis results according to embodiments of the present disclosure.

Reference numerals illustrate:

100: an atom probe analysis device;

102: a connecting device;

104: a storage medium;

106: a processor;

112: a pulsed laser;

114: a mass spectrometer;

300: a mass spectrogram;

310: a peak value;

500: comparing the graphs;

510: a line segment;

s202 to S206, S402 to S412: and (3) step (c).

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these components and arrangements are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments in which the first feature and the second feature are formed in direct contact, and may also include embodiments in which additional features may be formed between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. Further, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Moreover, for ease of description, spatially relative terms such as "below …," "under …," "lower," "above …," "upper," and the like may be used herein to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

In order to increase the accuracy of quantitative analysis of elements in silicon phosphide epitaxy (epi) or other processes, the embodiments of the present disclosure address the problem of overlapping complex ion signals, and calculate the ratio of ions of various volumes (e.g., mono-, di-and tri-volumes) of a specific element by using the count value of ions existing alone (i.e., the mass-to-charge ratio is not overlapped with other ions) in a mass spectrum, and apply the ratio to the count value of ions overlapped with signals to distinguish the count value of ions of each volume. The accuracy of the quantitative analysis results can be increased by deconvolution (deconvolution) operation performed on the interference (interference) in the spectrogram. The disclosed embodiments further introduce an artificial intelligence (Artificial Intelligence, AI)/machine learning (machine learning) model into the atom probe analysis, so that after the analysis is completed or during the execution (run), the fingerprint (finger print) of each measurement of the test sample in the mass spectrogram can be recognized in-situ (in-situ), and the quantitative result of each measurement can be corrected accordingly.

Fig. 1 is a block diagram of an atomic probe analysis apparatus according to an embodiment of the present disclosure. Referring to fig. 1, an atom probe analyzing apparatus 100 of the present embodiment includes a connection device 102, a storage medium 104, and a processor 106 connected to the connection device 102 and the storage medium 104.

In some embodiments, the atom probe analysis device 100 is externally connected to the pulsed laser 112 and the mass spectrometer 114 via the connection device 102 and is configured to control the pulsed laser 112 through the connection device 102 and acquire a mass spectrum from the mass spectrometer 114. The pulsed laser 102 uses, for example, a femto-second (femto-second) laser, and is not limited thereto. In some embodiments, the atom probe analysis device 100 can be provided or integrated into the mass spectrometer 114 without limitation herein. The atom probe analysis device 100 will be described in detail in the following description.

The connection means 102 is, for example, a universal serial bus (universal serial bus, USB), a fire wire (firewire), a thunderbolt (thunderbolt), a universal asynchronous receiver transmitter (universal asynchronous receiver/transmitter, UART), a serial peripheral interface (serial peripheral interface, SPI) bus, a wireless fidelity (WiFi) or bluetooth, etc., any wired or wireless interface compatible with the pulse laser 112 and the mass spectrometer 114, without limitation herein.

The storage medium 104 may be any type of fixed or removable random access memory (random access memory, RAM), read-only memory (ROM), flash memory (flash memory), or the like, or a combination thereof. In this embodiment, the storage medium 104 is used to store mass spectra acquired from the mass spectrometer 114 via the connection device 102 and record computer programs or instructions that are accessible and executable by the processor 106.

The processor 106 is configured to execute instructions to carry out the atomic probe analysis method of the embodiments of the present disclosure. The processor 106 is, for example, a central processing unit (central processing unit, CPU), other programmable general purpose or special purpose microprocessors, digital signal processors (digital signal processor, DSP), programmable logic controller, application specific integrated circuits (application specific integrated circuit, ASIC), programmable logic devices (programmable logic device, PLD), other similar devices, or combinations thereof, but the disclosure is not limited thereto.

The atom probe analysis apparatus 100 is adapted to carry out atom probe analysis methods according to some embodiments of the present disclosure. In detail, fig. 2 is a flowchart illustrating an atomic probe analysis method according to an embodiment of the disclosure. Referring to fig. 1 and 2, the method of the present embodiment is applicable to the atom probe analysis apparatus 100 shown in fig. 1, and detailed steps of the method of the present embodiment are described below with reference to various components in the atom probe analysis apparatus 100 shown in fig. 1.

In step S202, the processor 106 of the atom probe analysis device 100 irradiates an atom probe including a test sample with a pulsed laser 112. The atomic probe is manufactured by, for example, polishing a semiconductor device sample to a needle shape with a size suitable for analysis, so that the atoms on the probe surface are volatilized and emitted by irradiation of the pulse laser 102.

In step S204, the processor 106 analyzes ions emitted from the surface of the atom probe, which include various volumes of a specific element and have various valence numbers, with the mass spectrometer 114 to obtain a mass spectrum. The element is, for example, a doping element (doping element) such as phosphorus, arsenic, boron, titanium, aluminum, etc. used in the semiconductor process, and is not limited herein. Taking phosphorus as an example, the ions include, for example, phosphorus in a single volume P, a double volume P2, and a triple volume P3, each of which has, for example, three valencies, e.g., the single volume P includes p+, p++; the doublet P2 includes P2+, P2++; trisomy P3 includes P3+, P3++. The mass spectrometer 114 analyzes the ions emitted from the surface of the atom probe to obtain mass spectra of ion signals of different valence numbers including each of the specific element.

For example, fig. 3 is a mass spectrum of a phosphorus ion according to an embodiment of the disclosure. Referring to fig. 3, the horizontal axis of the mass spectrum 300 of the present embodiment is the mass-to-charge-state ratio (mass-to-charge ratio), the unit is the endocytosis (Da), the vertical axis is the count value, and the unit is the secondary. The curve in the mass spectrum 300 may be considered as a fingerprint (fingerprint) of phosphorus, which includes a plurality of peaks, each peak being, for example, a single ion corresponding to a single valence number of a single species of phosphorus, and possibly ions corresponding to different valence numbers of multiple species of phosphorus. For example, the number of the cells to be processed, the peak 310 with mass-to-charge ratio of 31 Da is formed by three ions P+ of phosphorus P2++, signals of P3+++ are overlapped.

In step S206, the processor 106 normalizes the count values of the mass-to-charge ratios corresponding to the ions of different valence numbers of the various scales in the mass spectrum to obtain the ratio of the ions of the various scales, and corrects the quantitative result of the ions of the various scales.

In some embodiments, the processor 106 calculates the ratio of the ions of the various volumes using the count values of the mass-to-charge ratios in the mass spectrum corresponding to the ions of the various volumes that do not overlap with the ions of the other volumes, and then applies this ratio to the count value of the mass-to-charge ratio corresponding to the overlapping volumes in the mass spectrum (e.g., the count value of mass-to-charge ratio 31 Da in fig. 3). The processor 106 multiplies the count value of the mass-to-charge ratio of the ions corresponding to the overlapped mass in the mass spectrum by the ratio of each mass and the corresponding atomic number to obtain the count value of the ions corresponding to the valence of each mass of the mass-to-charge ratio as the quantitative result of the ions of each mass.

For example, the following table sets forth a relationship chart of count values for respective mass-to-charge ratios in a phosphorus ion mass spectrum. As can be seen from the first table of the figures, the mass-to-charge ratios of the phosphorus ions P+, P2++, P3++ are 31 Da, that is to say that the first and second, phosphorus ions P+, P2++, the signals (count values) of p3+++ overlap. This also makes it impossible to accurately calculate the actual amounts of various phosphorus amounts from the count value of the mass-to-charge ratio 31 Da.

List one

In detail, the total count value of the mass-to-charge ratio 31 Da is equal to x3+y3+z3, so that the count value cannot be obtained as the respective values of X3, Y3, and Z3, and the actual count value should be x3+2y3+3z3. If this count is taken as X3+Y3+Z3, the actual magnitude of X3, Y3, Z3 will be underestimated as a result.

In some embodiments, the ratio of ions of different amounts of phosphorus can be calculated using the count value of mass-to-charge ratios that does not include multiple phosphorus ions. For example, the proportion of the phosphorus ions p++, p++ to all the phosphorus ions (including p++, p2+, p2++, p3+, p3++ but excluding the p+, p2++, p3++ with overlapping signals) can be calculated as the proportion of the phosphorus ions p+ to the count value of the mass-to-charge ratio 31 Da. And so on, the proportions RX3, RY3, RZ3 of the phosphorus ions P+, P2++, P3++ in the count value of the mass-to-charge ratio 31 Da can be obtained, the following are provided:

RX3＝(X1+X2)/(X1+X2+Y1+Y2+Z1+Z2)；

RY3＝(Y1+Y2)/(X1+X2+Y1+Y2+Z1+Z2)；

RZ3＝(Z1+Z2)/(X1+X2+Y1+Y2+Z1+Z2)。

wherein, by multiplying the above ratio by the count value of mass-to-charge ratio 31 Da and the corresponding atomic number, the count values X3, Y3 and Z3 of the phosphorus ions P+, P2++, P3++ in the mass-to-charge ratio of 31 Da can be obtained as follows:

X3＝P*RX3*1；

Y3＝P*RY3*2；

X3＝P*RZ3*3。

by the deconvolution operation performed on the interference in the mass spectrogram, the actual magnitude of the ions of each volume can be distinguished from the count value of the mass (mass-to-charge ratio) of the signal superposition, thereby increasing the accuracy of the quantitative analysis result.

In some embodiments, the disclosed embodiments may also feed the corrected quantitative result of each of the ions back to the power supply of the pulse laser 112 to adjust the charge-state-ratio (CSR) so that the ratio of the ions of different valence numbers of each of the ions is kept constant. For example, the ratio of P+, P++ ions of the phosphorus monomer P is maintained constant for subsequent analysis.

In some embodiments, the disclosed embodiments may also introduce an Artificial Intelligence (AI)/machine learning model into the atom probe analysis, and may identify the fingerprints of each volume of the test sample in the mass spectrum in situ after the analysis is completed or during the execution, and correct the quantitative result of each volume accordingly.

In detail, fig. 4 is a flowchart illustrating an atomic probe analysis method according to an embodiment of the disclosure. Referring to fig. 1 and 4, the method of the present embodiment is applicable to the atom probe analysis apparatus 100 shown in fig. 1, and detailed steps of the method of the present embodiment are described below with reference to various components in the atom probe analysis apparatus 100 shown in fig. 1.

In step S402, a learning model is built by the processor 106 of the atom probe analysis apparatus 100 using a machine learning algorithm. In some embodiments, the processor 106 creates a convolutional neural network (convolution neural network, CNN) model, for example, comprising a plurality of input layers, a plurality of convolutional layers, and an output layer, and learns the initial conditions (starting conditions) and the analysis results of analyzing the test sample for the best filter for identifying the fingerprint of the ions of the test sample in accordance with the disclosed embodiments.

In step S404, the processor 106 of the atom probe analysis device 100 irradiates an atom probe including a test sample with the pulsed laser 112. In step S406, the processor 106 analyzes ions emitted from the surface of the atom probe, which include a plurality of volumes of a specific element and have a plurality of valencies, with the mass spectrometer 114 to obtain a mass spectrum. In step S408, the processor 106 normalizes the count values of the mass-to-charge ratios corresponding to the ions of different valence numbers of the various scales in the mass spectrum to obtain the ratio of the ions of the various scales, and corrects the quantitative result of the ions of the various scales. The steps S404 to S408 are the same as or similar to the steps S202 to S206 in the embodiment of fig. 2, so the details thereof are not repeated here.

In step S410, the processor 106 learns the relationship between the initial conditions at the time of analysis of the test sample and the quantitative results of the ions of the respective volumes obtained by the analysis using the learning model. The initial conditions include the pulse laser energy (pulse laser energy, PLE) of the pulse laser 112, the charge state ratio, the voltage applied to the atom probe, the temperature of the atom probe, the detection rate, or the frequency, without limitation.

In step S412, the processor 106 identifies a fingerprint (finger print) of each volume of the test sample in the mass spectrogram during execution (runtime) using the trained learning model, and corrects the quantitative result of each volume accordingly.

The embodiments of the present disclosure train the coefficient values of each layer in a learning model by using a large amount of test data (including initial conditions and analysis results) as input and output of the learning model, and the learning model can adaptively identify fingerprints in a received main range file (mass spectrogram) and automatically output or generate the ratio and quantitative result of each volume of a specific component even if the process conditions or parameters of the tested sample change during the analysis. Therefore, the accuracy of quantitative analysis of elements can be increased, and the process is further improved.

FIG. 5 is a graph comparing quantitative analysis results according to embodiments of the present disclosure. Referring to fig. 5, the horizontal axis of the comparison chart 500 of the present embodiment represents the state of charge ratio (CSR) of silicon, and the vertical axis represents the phosphorus ion concentration in percent (%). Wherein triangle data points are quantitative result distributions obtained without using the atom probe analysis method of the presently disclosed embodiments, and diamond data points are quantitative result distributions obtained using the atom probe analysis method of the presently disclosed embodiments. Line segment 510 is the phosphorus ion value concentration obtained using secondary ion mass spectrometry (Secondary Ion Mass Spectrometer, SIMS) analysis. Comparing the distribution of data points before and after using the atomic probe analysis method of the presently disclosed embodiments, an improvement in quantitative accuracy of about 17.6% (a gap from the SIMS results of 18.7% reduced to 1.1%) can be obtained, and the quantitative results are also close to the target concentration provided by line segment 510. It can be demonstrated that the atomic probe analysis method of the present embodiment can correct the deviation of the quantitative analysis result caused by the signal overlapping, and increase the accuracy of the quantitative analysis result.

By means of the method, the present disclosure provides the following advantages: (1) Calculating interference quality (mass-to-charge ratio) and feeding back to the overlap quality and power supply to change data quality; (2) in-situ identifying the elements by fingerprints and correcting the deviations; and (3) increasing the accuracy of quantitative analysis of the elements, thereby improving the process.

According to some embodiments, an atom probe analysis method is provided, suitable for use in an electronic device having a processor. The method comprises the following steps: irradiating an atom probe comprising a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valence numbers in the mass spectrogram to obtain the proportion of the ions of each mass, and correcting the quantitative result of the ions of each mass.

According to some embodiments, an atom probe analysis device is provided that includes a connection device and a processor. Wherein the connecting device is used for connecting the pulse laser and the mass spectrometer. The processor is coupled to the connection device and configured to irradiate an atom probe comprising a test sample with a pulsed laser, analyze ions ejected from a surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise a plurality of volumes of an element and have a plurality of valencies, and normalize count values of corresponding mass-to-charge ratios of ions of different valencies for each volume in the mass spectrum to obtain a proportion of ions for each volume, and correct a quantification of ions for each volume.

According to some embodiments, there is provided a computer readable recording medium for recording a program loaded by a processor to execute: irradiating an atom probe comprising a test sample with a pulsed laser; analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and normalizing the count values of the mass-to-charge ratios corresponding to the ions with different valence numbers in the mass spectrogram to obtain the proportion of the ions of each mass, and correcting the quantitative result of the ions of each mass.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

Claims

1. An atom probe analysis method for use in an electronic device having a processor, the method comprising:

irradiating an atom probe comprising a test sample with a pulsed laser;

analyzing ions ejected from the surface of the atom probe with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and

normalizing count values of mass-to-charge ratios of the ions of different valences of each volume in the mass spectrum to obtain a proportion of the ions of each volume, correcting a quantification result of the ions of each volume,

the step of normalizing the count values of the mass-to-charge ratios of the ions of different valence numbers of the respective mass bodies in the mass spectrogram to obtain the proportion of the ions of the respective mass bodies, and correcting the quantitative result of the ions of the respective mass bodies comprises the following steps:

calculating the proportion of the ions of each measuring body by using the count value of the mass-to-charge ratio, which corresponds to the ions of different valence numbers of each measuring body, in the mass spectrogram and is not overlapped with the ions of other measuring bodies; and

multiplying a count value of the mass-to-charge ratio of the ions corresponding to the superimposed mass in the mass spectrum by the ratio of each of the mass and the corresponding atomic number to obtain a count value of the ions corresponding to the valence of each of the mass and charge ratio as a result of quantification of the ions of each of the mass.

2. The method of claim 1, wherein the method further comprises:

and feeding back the quantitative result of the ions of each corrected measuring body to the power supply of the pulse laser to adjust the charge state ratio, so that the proportion of the ions with different valence numbers of each measuring body is kept fixed.

3. The method of claim 1, wherein the method further comprises:

establishing a learning model by using a machine learning algorithm to learn a relationship between an initial condition at the time of analysis of the test sample and the quantitative result of the ions of each of the volumes obtained by the analysis; and

and identifying fingerprints of each measuring body of the test sample in the mass spectrogram during execution by using the learning model, and correcting the quantitative result of each measuring body according to the fingerprints.

4. The method of claim 1, wherein the element comprises a doping element used in semiconductor processing, the doping element comprising phosphorus, arsenic, boron, titanium, aluminum.

5. The method of claim 3, wherein the initial conditions comprise a pulsed laser energy of the pulsed laser, a charge state ratio, a voltage applied to the atom probe, a temperature of the atom probe, a detection rate, or a frequency.

6. The method of claim 1, wherein the volumes comprise a single volume, a double volume, and a triple volume.

7. An atom probe analysis device comprising:

the connecting device is used for connecting the pulse laser with the mass spectrometer;

a processor, coupled to the connection device, configured to:

irradiating an atom probe comprising a test sample with the pulsed laser;

analyzing ions ejected from the surface of the atom probe with the mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and

wherein the processor includes calculating a ratio of the ions of each of the volumes using a count value of a mass-to-charge ratio of the ions of each of the volumes corresponding to the different valence numbers of the volumes in the mass spectrum that does not overlap with the ions of other volumes, and multiplying the count value of the mass-to-charge ratio of the ions of the volumes corresponding to the overlap in the mass spectrum by the ratio of the volumes and a corresponding atomic number to obtain a count value of the ions of the valence numbers of each of the volumes corresponding to the mass-to-charge ratios as a quantitative result of the ions of each of the volumes.

8. The atomic probe analysis device according to claim 7, wherein the processor further comprises feeding back the quantitative result of the ions of each of the volumes after correction to a power supply of the pulse laser to adjust a charge state ratio so that a ratio of the ions of different valence numbers of each of the volumes is maintained constant.

9. The atom probe analysis apparatus of claim 7 wherein the processor further comprises establishing a learning model using a machine learning algorithm to learn a relationship between an initial condition at the time of analysis of the test sample and the quantitative result of the ions of each of the volumes obtained by the analysis, and identifying a fingerprint of each of the volumes of the test sample in the mass spectrogram during execution using the learning model, and correcting the quantitative result of each of the volumes accordingly.

10. The atomic probe analysis device according to claim 9, wherein the initial conditions comprise a pulse laser energy of the pulse laser, a charge state ratio, a voltage applied to the atomic probe, a temperature of the atomic probe, a detection rate, or a frequency.

11. The atomic probe analysis device according to claim 7, wherein the elements include doping elements used in semiconductor manufacturing, the doping elements including phosphorus, arsenic, boron, titanium, aluminum.

12. The atomic probe analysis device according to claim 7, wherein the measuring body includes a single measuring body, a double measuring body and a three measuring body.

13. A computer-readable recording medium, wherein the recording medium records a program, the program loaded by a processor to execute:

irradiating an atom probe comprising a test sample with a pulsed laser;

collecting ions ejected from the surface of the atom probe and analyzing the ions with a mass spectrometer to obtain a mass spectrum, wherein the ions comprise multiple volumes of an element and have multiple valencies; and

normalizing count values of mass-to-charge ratios of the ions of different valence numbers of the respective mass bodies in the mass spectrogram to obtain a proportion of the ions of the respective mass bodies, and correcting a quantitative result of the ions of the respective mass bodies comprises:

14. The computer-readable recording medium according to claim 13, further comprising:

15. The computer-readable recording medium according to claim 13, further comprising:

16. The computer readable recording medium of claim 15, wherein the initial conditions include pulse laser energy of the pulse laser, a charge state ratio, a voltage applied to the atom probe, a temperature of the atom probe, a detection rate, or a frequency.

17. The computer-readable recording medium according to claim 13, wherein the elements include doping elements used in semiconductor manufacturing, the doping elements include phosphorus, arsenic, boron, titanium, aluminum, and the gauges include single gauge, double gauge, and triple gauge.