CN111736432A - Device for blocking photoresist outgassing pollution - Google Patents
Device for blocking photoresist outgassing pollution Download PDFInfo
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- CN111736432A CN111736432A CN202010544352.9A CN202010544352A CN111736432A CN 111736432 A CN111736432 A CN 111736432A CN 202010544352 A CN202010544352 A CN 202010544352A CN 111736432 A CN111736432 A CN 111736432A
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- scanning area
- gap
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 27
- 238000010943 off-gassing Methods 0.000 title claims abstract description 17
- 230000000903 blocking effect Effects 0.000 title claims description 14
- 239000002253 acid Substances 0.000 claims abstract description 30
- 230000000694 effects Effects 0.000 claims abstract description 6
- 238000011109 contamination Methods 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 description 105
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a device for obstructing the outgassing pollution of photoresist, which comprises: the gas baffle is arranged in the vacuum chamber and positioned between the dynamic gas lock and the wafer, and is provided with a light-transmitting gap, the size of the light-transmitting gap at least ensures that all light rays passing through the dynamic gas lock pass through the light-transmitting gap and the light-transmitting gap is projected to a scanning area of the wafer coated with the light resistor to form an image field; the scanning area is continuously changed below the light-transmitting gap, and the light resistance generates a time delay effect of acid gas relative to the change of the scanning area due to exposure, so that when the light resistance generates acid gas on the previous scanning area, the previous scanning area is positioned below the gas baffle plate except the light-transmitting gap, and the generated acid gas is blocked and adsorbed. The invention can greatly delay the time for replacing the dynamic gas lock and increase the delivery volume.
Description
Technical Field
The invention relates to the technical field of integrated circuits and photoetching, in particular to a device capable of blocking photoresist outgassing pollution.
Background
Referring to FIG. 1, FIG. 1 is a schematic diagram of a photolithography vacuum chamber structure. As shown in fig. 1, in 13.5nm euv lithography, for example, a wafer 13 is placed on a wafer stage 12 within a lower vacuum chamber 10 for lithography. The light is projected onto the wafer 13 through the lens groups of the lens system according to a certain propagation direction. The lens system is provided in the upper vacuum chamber 11.
Extreme ultraviolet resist (photoresist) used in photolithography generates a large amount of acid gas 14 (outgassing) during exposure and is discharged into the vacuum chambers 10, 11. The acid gas 14 may contaminate the lens, particularly the lens near the wafer 13.
One of the solutions to solve the problem of acid gas 14 contamination is to add a film, i.e. a dynamic gas lock 15, between the lens close to the wafer 13 and the wafer 13 to block as much as possible the acid gas 14 generated by the photoresist on the wafer 13 from diffusing to the side of the lens system, as shown in fig. 1-2.
However, as the exposure time increases, contamination of the dynamic gas lock 15 may also occur due to long-term accumulation of the acid gas 14. If the dynamic gas lock 15 is not replaced in time, the intensity of the exposure light and thus the exposure result may be affected.
However, the conventional method of replacing the dynamic gas lock membrane requires a shutdown and opening of the vacuum chamber. Furthermore, the chamber needs to be re-evacuated after the dynamic gas lock film is replaced, which takes about 3 days, and thus greatly affects the shipment volume of the euv lithography machine.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned drawbacks of the prior art, and provides a device for blocking outgassing contamination of photoresist.
In order to achieve the purpose, the technical scheme of the invention is as follows:
an apparatus for blocking outgassing contamination of photoresist, comprising:
the gas baffle is arranged in the vacuum chamber and positioned between the dynamic gas lock and the wafer, and is provided with a light-transmitting gap, the size of the light-transmitting gap at least ensures that all light rays passing through the dynamic gas lock pass through the light-transmitting gap and the light-transmitting gap is projected to a scanning area of the wafer coated with the light resistor to form an image field;
the scanning area is continuously changed below the light-transmitting gap, and the light resistance generates a time delay effect of acid gas relative to the change of the scanning area due to exposure, so that when the light resistance generates acid gas on the previous scanning area, the previous scanning area is positioned below the gas baffle plate except the light-transmitting gap, and the generated acid gas is blocked and adsorbed.
Furthermore, the gas baffle is arranged in the vacuum chamber in a horizontal rotating mode, and the light-transmitting gap is located below the dynamic gas lock and on the scanning path of the wafer through the rotation of the gas baffle.
Further, the gas baffle is horizontally arranged and is rotatably connected with the inner wall of the vacuum chamber through a rotating shaft, and the rotating shaft is offset to one side of the dynamic gas lock.
Furthermore, the light-transmitting gaps are multiple, are arranged at intervals and are annularly distributed by taking the rotation center of the gas baffle as the center of a circle.
Further, the light-transmitting gap is an annular gap taking the rotation center of the gas baffle as the center of circle.
Further, the shape of each light-transmitting slit corresponds to the shape of the image field.
Further, the number of the light-transmitting gaps is 4-8.
Furthermore, the gas baffle is matched with the rotating shaft in a magnetic suspension mode.
Further, the light-transmitting gaps are positioned below the dynamic gas lock by rotating the gas baffle.
Furthermore, different arc sections of the annular gap are respectively positioned below the dynamic gas lock by rotating the gas baffle, and the arc sections correspond to the shape of the image field.
According to the technical scheme, the rotatable dynamic gas baffle with the light-transmitting gap is additionally arranged in the vacuum chamber, the time delay effect of acid gas relative to the change of the scanning area is generated by utilizing the light resistance, and most of the acid gas is blocked below the gas baffle outside the light-transmitting gap, so that the time for replacing the dynamic gas lock can be greatly delayed under the non-stop state, and the goods output of the photoetching machine is increased.
Drawings
FIG. 1 is a schematic diagram of a photolithography vacuum chamber configuration.
Fig. 2 is an enlarged schematic view of the part a in fig. 1.
FIG. 3 is a schematic diagram of a structure of an apparatus for blocking photoresist outgassing contamination according to a preferred embodiment of the invention.
Fig. 4-5 are schematic diagrams illustrating the operation of an apparatus for blocking photoresist outgassing contamination according to a preferred embodiment of the present invention.
Fig. 6 is an enlarged schematic view of the part B in fig. 5.
Fig. 7 is a schematic view illustrating a state of the gas baffle when the light-transmitting gap is replaced according to a preferred embodiment of the invention.
Detailed Description
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In the following detailed description of the embodiments of the present invention, in order to clearly illustrate the structure of the present invention and to facilitate explanation, the structure shown in the drawings is not drawn to a general scale and is partially enlarged, deformed and simplified, so that the present invention should not be construed as limited thereto.
In the following description of the present invention, please refer to fig. 3, fig. 3 is a schematic structural diagram of an apparatus for blocking outgassing contamination of photoresist according to a preferred embodiment of the present invention. Referring to FIG. 3, an apparatus for blocking outgassing contamination of photoresist in accordance with the present invention, as exemplified by EUV lithography, includes a gas baffle 16 disposed within the vacuum chamber 10 of the EUV lithography machine. The structural layout of the euv lithography vacuum chamber 10 can be understood with reference to fig. 1.
Referring to FIG. 3, the structure of the lower vacuum chamber 10 of FIG. 1 is shown. The gas baffle 16 may be in the form of a thin plate and horizontally disposed between the dynamic gas lock 15 and the wafer 13 at a suitable distance from the wafer 13.
The gas baffle 16 is rotatably connected to the inner wall of the vacuum chamber 10 by a rotating shaft 18, so that the gas baffle 16 becomes a dynamic baffle. The spindle 18 may take the form of a crank and is offset to one side of the dynamic gas lock 15. The gas baffle 16 and the rotating shaft 18 can be matched in a magnetic suspension mode to reduce the generation of particles.
The gas baffle 16 is provided with a light-transmitting slit 17.
Please refer to fig. 4. The light-transmitting slit 17 may take the form of a separate slit-shaped light-transmitting window. The size of the light-transmitting gap 17 is at least such that all the light passing through the dynamic gas lock 15 from above can pass through the light-transmitting gap 17 and all project onto the scanning area of the wafer 13 coated with photoresist (photoresist) to form the image field 19. I.e. the shape of the light-transmitting slit 17 corresponds to the annular (arc-shaped) shape of the image field 19.
When the gas baffle 16 is rotated, the light-transmitting aperture 17 may be positioned below the dynamic gas lock 15 and in the scan path of the wafer 13. Alternatively, the light-transmitting slit 17 may be moved away from under the dynamic gas lock 15.
Further, the light-transmitting slits 17 can also adopt a plurality of independent slit-shaped light-transmitting windows, for example, the number of the light-transmitting slits 17 can be 4-8, and the shape of each light-transmitting slit 17 corresponds to the shape of the image field 19. The light-transmitting slits 17 are arranged on the gas baffle 16 with a certain interval 24 (fig. 7) kept therebetween, and can form a concentric circular distribution structure with the rotation center (the rotating shaft 18) of the gas baffle 16 as the center. Each of the light-transmitting slits 17 forms an arc segment in the circular ring, and as shown in fig. 7, it is shown that 7 slit-shaped light-transmitting slits 17 (light-transmitting windows) numbered 1 to 7 are provided in the gas baffle 16. The gas baffle 16 may be made of a circular thin plate, and the rotating shaft 18 is disposed on the center of the gas baffle 16. When the driving shaft 18 rotates, the gas baffle 16 is driven to rotate, so that the light-transmitting gaps 17 (1-7) on the gas baffle 16, which are positioned on the same ring, can pass through the lower part of the dynamic gas lock 15 respectively and are independently positioned below the dynamic gas lock 15.
As an alternative embodiment, the light-transmitting gap 17 may also be made as a continuous annular gap centered on the center of rotation of the gas baffle 16 (i.e., no gap 24 is present). In this state, by rotating the gas baffle 16, different arc segments of the annular gap are located below the dynamic gas lock 15, respectively, and each arc segment corresponds to the shape of the image field 19.
The gas baffle 16 may be made of stainless steel or copper. When the light-transmitting slits 17 are a plurality of arc-shaped slits (1 to 7), a space 24 is formed between the light-transmitting slits 17 by the stainless steel or copper material of the gas barrier 16, as shown in fig. 7.
The size of the arc-shaped slits (1-7) can be adjusted according to the height position of the gas baffle plate 16 between the dynamic gas lock 15 and the wafer 13. In general, the arc-shaped slits (1-7) are smaller than the slits (light-transmitting regions) of the dynamic gas lock 15 and larger than the image field 19 on the surface of the wafer 13, i.e., it is necessary to ensure that all light rays can pass through the light-transmitting slits 17 (see the regions indicated by the oblique lines in the figure).
When extreme ultraviolet light irradiates the photoresist, high-energy electrons are excited, the high-energy electrons are converted into secondary electrons, and the secondary electrons excite the photoacid generator to generate photoacid, so that acid gas is generated through reaction. That is, the generation of acid gas is delayed, and the exposure speed is relatively fast.
By utilizing the continuous change of the scanning area below the light-transmitting gap 17 and the time delay effect of the acid gas generated by the photoresist relative to the change of the scanning area due to exposure, namely, by utilizing the characteristic that the speed of generating the acid gas by the photoresist on one scanning area lags behind the alternating time of two exposures, when the acid gas is generated by the photoresist on the previous scanning area, the actual position of the acid gas generated by the photoresist on the previous scanning area is moved to the position below the gas baffle 16 outside the light-transmitting gap 17 in the change process of the scanning area, so that the acid gas released from the previous scanning area can be blocked by the gas baffle 16, and the acid gas can be blocked and adsorbed. Thus, the time for replacing the dynamic gas lock 15 can be greatly delayed, and the service life of the dynamic gas lock 15 can be prolonged.
The number of the light-transmitting gaps 17 can be generally set to 4-8. The slit size of the light-transmitting slit 17 may be closer to the annular exposure slit (image field 19) on the wafer 13 as the gas baffle 16 is closer to the wafer 13. Meanwhile, since the slits of the gas barrier 16 are small in size, the acid gas 14 generated from the photoresist is less likely to be re-attached to the dynamic gas lock 15 through the slits 17, and thus the number of slits that can be arranged on the gas barrier 16 is increased.
Please refer to fig. 4-5. Taking the example of arranging a circle (a plurality of) of light-transmitting slits 17 on the gas baffle 16, when exposure is required, the gas baffle 16 is rotated to make one of the light-transmitting slits 17 be located below the dynamic gas lock 15, for example, the light-transmitting slit 17 No. 1 is located below the dynamic gas lock 15, as shown in the left side of the figure in fig. 7. Taking the example that the wafer 13 is moved to the position below the dynamic gas lock 15 by scanning, all the light passing through the dynamic gas lock 15 from above can pass through the No. 1 light-transmitting slit 17 and all the light is projected onto the first scanning area of the wafer 13 coated with photoresist (photoresist) to form the annular image field 19, as shown in fig. 4.
After exposure, the wafer 13 is moved in the y-direction as shown to a second scan area below the dynamic gas lock 15. At this time, when the photoresist on the first scanning area generates acid gas due to the time delay effect, the first scanning area (the area represented by the annular image field 19) has moved from the original first position 22 to the second position 21 below the gas baffle 16 (the second scanning area is located at the first position 22) outside the light-transmitting slit 17, so that the acid gas released in a time delay manner from the first scanning area can be blocked by the stainless steel material portion of the gas baffle 16 above the acid gas, as shown in fig. 5.
Fig. 6 shows the gas release paths 20, and it can be seen that, in the gas release paths 20, the released acid gases 14 can be well blocked by the material of the gas baffle 16 outside the light-transmitting slits 17, and can not actually be transmitted upwards along the "gas release paths".
After a period of use (e.g. 2 months), there is already a sufficient accumulation 23 of acidic species on the lower surface of the gas baffle 16 near both sides of the No. 1 light transmission slit 17, i.e. along the radial direction of the gas baffle 16, on both sides before and after the No. 1 light transmission slit 17. At this time, the number 2 light-transmitting slit 17 is moved to the lower side of the dynamic gas lock 15 by rotating the gas baffle 16, and the remaining unused slits (2 to 7) are continuously used, so that the exposure process can be repeated until the number 7 light-transmitting slit 17 is replaced, as shown in the figure of fig. 7 and the right side of the figure.
The present invention provides for the containment of a substantial portion of the acid gas 14 by the addition of a rotatable dynamic gas baffle 16 within the vacuum chamber. Therefore, the invention can greatly delay the time for replacing the dynamic gas lock 15 under the non-stop state, thereby increasing the shipment volume of the extreme ultraviolet lithography machine.
The above description is only a preferred embodiment of the present invention, and the embodiments are not intended to limit the scope of the present invention, so that all equivalent structural changes made by using the contents of the specification and the drawings of the present invention should be included in the scope of the present invention.
Claims (10)
1. An apparatus for blocking outgassing contamination of photoresist, comprising:
the gas baffle is arranged in the vacuum chamber and positioned between the dynamic gas lock and the wafer, and is provided with a light-transmitting gap, the size of the light-transmitting gap at least ensures that all light rays passing through the dynamic gas lock pass through the light-transmitting gap and the light-transmitting gap is projected to a scanning area of the wafer coated with the light resistor to form an image field;
the scanning area is continuously changed below the light-transmitting gap, and the light resistance generates a time delay effect of acid gas relative to the change of the scanning area due to exposure, so that when the light resistance generates acid gas on the previous scanning area, the previous scanning area is positioned below the gas baffle plate except the light-transmitting gap, and the generated acid gas is blocked and adsorbed.
2. The apparatus of claim 1, wherein the gas barrier is horizontally rotatable within the vacuum chamber, and the light-transmitting gap is located below the dynamic gas lock and on a scanning path of the wafer by rotation of the gas barrier.
3. The apparatus of claim 2, wherein the gas baffle is horizontally disposed and rotatably connected to the inner wall of the vacuum chamber by a rotating shaft, and the rotating shaft is offset from one side of the dynamic gas lock.
4. The device for blocking the outgassing contamination of the photoresist of claim 2, wherein the number of the light-transmitting gaps is multiple, and the light-transmitting gaps are arranged at intervals and annularly distributed around the rotation center of the gas baffle.
5. The apparatus of claim 2, wherein the light-transmissive gap is an annular gap centered on a rotation center of the gas baffle.
6. The device for blocking photo-resist outgassing contamination according to claim 4, wherein the shape of each of the light-transmitting slits corresponds to the shape of the image field.
7. The device for blocking the outgassing contamination of the photoresist according to claim 4, wherein the number of the light-transmitting slits is 4-8.
8. The apparatus for obstructing photoresist outgassing contamination according to claim 3, wherein the gas baffle is magnetically suspended in cooperation with the rotating shaft.
9. The apparatus for blocking photo-resist outgassing contamination according to claim 4, wherein the gas baffle is rotated to position each of the light-transmissive slits under the dynamic gas lock.
10. The apparatus of claim 5, wherein different arc segments of the annular gap are respectively located under the dynamic gas lock by rotating the gas baffle, the arc segments corresponding to the shape of the image field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010544352.9A CN111736432A (en) | 2020-06-15 | 2020-06-15 | Device for blocking photoresist outgassing pollution |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010544352.9A CN111736432A (en) | 2020-06-15 | 2020-06-15 | Device for blocking photoresist outgassing pollution |
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| Publication Number | Publication Date |
|---|---|
| CN111736432A true CN111736432A (en) | 2020-10-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010544352.9A Pending CN111736432A (en) | 2020-06-15 | 2020-06-15 | Device for blocking photoresist outgassing pollution |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973764A (en) * | 1997-06-19 | 1999-10-26 | Svg Lithography Systems, Inc. | Vacuum assisted debris removal system |
| US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
| US20010038442A1 (en) * | 2000-05-03 | 2001-11-08 | Silicon Valley Group, Inc. | Method and apparatus for a non-contact scavenging seal |
| US6369874B1 (en) * | 2000-04-18 | 2002-04-09 | Silicon Valley Group, Inc. | Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography |
| EP1349010A1 (en) * | 2002-03-28 | 2003-10-01 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050275821A1 (en) * | 2004-06-14 | 2005-12-15 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US20120127446A1 (en) * | 2010-11-22 | 2012-05-24 | Renesas Electronics Corporation | Light exposure method, and light exposure apparatus |
| CN105895509A (en) * | 2015-02-13 | 2016-08-24 | 台湾积体电路制造股份有限公司 | Novel photoresist additive for outgassing reduction and out-of-band radiation absorption |
-
2020
- 2020-06-15 CN CN202010544352.9A patent/CN111736432A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5973764A (en) * | 1997-06-19 | 1999-10-26 | Svg Lithography Systems, Inc. | Vacuum assisted debris removal system |
| US6198792B1 (en) * | 1998-11-06 | 2001-03-06 | Euv Llc | Wafer chamber having a gas curtain for extreme-UV lithography |
| US6369874B1 (en) * | 2000-04-18 | 2002-04-09 | Silicon Valley Group, Inc. | Photoresist outgassing mitigation system method and apparatus for in-vacuum lithography |
| US20010038442A1 (en) * | 2000-05-03 | 2001-11-08 | Silicon Valley Group, Inc. | Method and apparatus for a non-contact scavenging seal |
| EP1349010A1 (en) * | 2002-03-28 | 2003-10-01 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20050275821A1 (en) * | 2004-06-14 | 2005-12-15 | Canon Kabushiki Kaisha | Exposure apparatus and device manufacturing method |
| US20120127446A1 (en) * | 2010-11-22 | 2012-05-24 | Renesas Electronics Corporation | Light exposure method, and light exposure apparatus |
| CN105895509A (en) * | 2015-02-13 | 2016-08-24 | 台湾积体电路制造股份有限公司 | Novel photoresist additive for outgassing reduction and out-of-band radiation absorption |
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Effective date of registration: 20201209 Address after: No. 497, Gauss Road, Zhangjiang, Pudong New Area, Shanghai, 201210 Applicant after: SHANGHAI IC R & D CENTER Co.,Ltd. Applicant after: Shanghai IC equipment Material Industry Innovation Center Co.,Ltd. Address before: No. 497, Gauss Road, Zhangjiang, Pudong New Area, Shanghai, 201210 Applicant before: SHANGHAI IC R & D CENTER Co.,Ltd. |
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Application publication date: 20201002 |
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