CN111732843A - High-temperature-resistant stealth material and preparation method thereof - Google Patents

Abstract

The invention discloses a high-temperature resistant stealth material and a preparation method thereof, wherein the high-temperature resistant stealth material comprises 30-40 parts of silicon carbide serving as an electrical absorbent by mass; 20-30 parts of silicon nitride as an electrical absorbent; 10-15 parts of zinc oxide as a magnetic absorbent; 10-15 parts of titanium dioxide as a magnetic absorbent; 15-20 parts of an auxiliary agent; 100 portions of solvent and 200 portions of solvent. The silicon carbide and the silicon nitride are jointly used as an absorbent, so that the absorption band range of electromagnetic waves is expanded, and the absorption rate is enhanced; the silicon carbide and the silicon nitride are mixed, so that the tolerance temperature of the high-temperature-resistant stealth material is further improved; the hydroxyethyl cellulose enables the high-temperature resistant stealth material to have better dispersibility; the zinc oxide and the titanium dioxide increase the hardness of the finally obtained high-temperature-resistant stealth film, and meanwhile, the electromagnetic wave absorption rate of the high-temperature-resistant stealth material is improved.

Description

High-temperature-resistant stealth material and preparation method thereof

[ technical field ] A method for producing a semiconductor device

The invention belongs to the field of anti-detection materials, and particularly relates to a high-temperature-resistant stealth material and a preparation method thereof.

[ background of the invention ]

The wave-absorbing material technology is a technology for weakening, inhibiting, absorbing and deflecting target electromagnetic waves by designing and using certain specific materials. The wave-absorbing coating is a convenient, economic and good-adaptability wave-absorbing material, and is originally developed for radar wave-absorbing requirements of aerospace and aviation aircrafts.

Some aerospace coatings, particularly some stealth materials, need to be able to withstand high temperature environments. Silicon carbide is therefore used in most cases as a base absorber for stealth materials. But on the one hand, the absorption band of silicon carbide is highly limited, and on the other hand, the tolerable temperature of silicon carbide is difficult to further increase.

[ summary of the invention ]

The invention aims to overcome the defects of the prior art and provide a high-temperature-resistant stealth material and a preparation method thereof.

The technical scheme adopted by the invention is as follows:

a high-temperature resistant stealth material comprises 30-40 parts by weight of silicon carbide as an electrical absorbent; 20-30 parts of silicon nitride as an electrical absorbent; 10-15 parts of zinc oxide as a magnetic absorbent; 10-15 parts of titanium dioxide as a magnetic absorbent; 15-20 parts of an auxiliary agent; 100 portions of solvent and 200 portions of solvent.

The mass ratio of the silicon carbide to the silicon nitride is 2: 1.

The solvent is deionized water.

The auxiliary agent is hydroxyethyl cellulose.

A preparation method of a high-temperature resistant stealth material comprises the following steps:

the method comprises the following steps: mixing silicon carbide and silicon nitride and calcining under inert gas;

step two: grinding the calcined product, and then filtering the ground product by adopting a 100-mesh screen;

step three: adding the filtered product into a solvent, uniformly stirring, then adding zinc oxide and titanium dioxide, and stirring again until the mixture is uniform;

step IV: adding the auxiliary agent, and then uniformly stirring.

The invention has the beneficial effects that:

1. the silicon carbide and the silicon nitride are jointly used as an absorbent, so that the absorption band range of electromagnetic waves is expanded, and the absorption rate is enhanced;

2. the silicon carbide and the silicon nitride are mixed, so that the tolerance temperature of the high-temperature-resistant stealth material is further improved;

3. the hydroxyethyl cellulose enables the high-temperature resistant stealth material to have better dispersibility;

4. the zinc oxide and the titanium dioxide increase the hardness of the finally obtained high-temperature-resistant stealth film, and meanwhile, the electromagnetic wave absorption rate of the high-temperature-resistant stealth material is improved.

Additional features and advantages of the invention will be set forth in the detailed description which follows.

[ detailed description ] embodiments

The technical solutions of the embodiments of the present invention are explained and illustrated below, but the following embodiments are only preferred embodiments of the present invention, and not all of them. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative effort belong to the protection scope of the present invention.

In the following description, the appearances of the indicating orientation or positional relationship such as the terms "inner", "outer", "upper", "lower", "left", "right", etc. are only for convenience in describing the embodiments and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the present invention.

Example 1:

the embodiment provides a high-temperature resistant stealth material, and a preparation method thereof, wherein the preparation method comprises the following steps (the following parts are calculated by mass):

the method comprises the following steps: mixing 40 parts of silicon carbide and 20 parts of silicon nitride and calcining under inert gas;

step two: grinding the calcined product, and then filtering the ground product by using a 100-mesh screen to obtain a filtered product with the particle size of 150 mu m;

step three: adding the filtered product into 200 parts of deionized water, uniformly stirring, then adding 10 parts of zinc oxide and 10 parts of titanium dioxide, and uniformly stirring again;

step IV: 15 parts of hydroxyethyl cellulose are added and then stirred uniformly.

The high-temperature resistant stealth material is prepared into the high-temperature resistant stealth film.

Example 2:

this example is different from example 1 in that 30 parts of silicon carbide was used in step (i).

Example 3:

this example is different from example 1 in that 10 parts of silicon carbide is contained in step (i).

Example 4:

this example differs from example 1 in that 10 parts zinc oxide and 10 parts titanium dioxide were not added in step (c).

Example 5:

this example differs from example 1 in that 20 parts zinc oxide and 20 parts titanium dioxide are added in step (c).

TABLE 1

	500nm	600nm	700nm
				Example 1	44.5％	65.44％	53.27％
Example 2	40.21％	50.01％	45.27％
				Example 3	41.22％	54.24％	43.59％
Example 4	35.28％	43.25％	41.89％
				Example 5	47.86％	60.45％	55.79％

Table 1 shows the absorptances of the high temperature resistant stealth films of examples 1 to 5 at 500nm, 600nm and 700nm, and it can be seen that the absorptance of the high temperature resistant stealth film at three wavelength ranges is reduced at the ratio of silicon carbide to silicon nitride of more than 2 and less than 0.5, and accordingly, the absorption ranges are also reduced. When zinc oxide and titanium dioxide are not added, the absorption rate of three wave bands is obviously reduced, and the absorption wave band range is also reduced. In the case where the contents of zinc oxide and titanium dioxide were increased, the absorbances at 500nm and 700nm were increased, but the absorbances at 600nm were decreased.

TABLE 2

Table 2 shows the temperature data for the high temperature resistant stealth films of examples 1-5. The silicon carbide to silicon nitride ratio is above 2 and below 0.5, the temperature resistance is reduced. In contrast, as the zinc oxide and titanium dioxide content increases, the withstand temperature has decreased.

While the invention has been described with reference to specific embodiments, it will be understood by those skilled in the art that the invention is not limited thereto, and may be embodied in other forms without departing from the spirit or essential characteristics thereof. Any modification which does not depart from the functional and structural principles of the present invention is intended to be included within the scope of the claims.

Claims (5)

1. A high-temperature resistant stealth material is characterized by comprising the following components in parts by weight

30-40 parts of silicon carbide as an electrical absorbent;

20-30 parts of silicon nitride as an electrical absorbent;

10-15 parts of zinc oxide as a magnetic absorbent;

10-15 parts of titanium dioxide as a magnetic absorbent;

15-20 parts of an auxiliary agent;

100 portions of solvent and 200 portions of solvent.

2. The high temperature resistant stealth material of claim 1, wherein the silicon carbide to silicon nitride mass ratio is 2: 1.

3. The high temperature resistant stealth material of claim 1, wherein the solvent is deionized water.

4. The high temperature resistant camouflage material of claim 1, wherein the additive is hydroxyethyl cellulose.

5. A method for preparing a high temperature resistant camouflage material as claimed in any one of claims 1 to 4, comprising the steps of:

the method comprises the following steps: mixing silicon carbide and silicon nitride and calcining under inert gas;

step two: grinding the calcined product, and then filtering the ground product by adopting a 100-mesh screen;

step three: adding the filtered product into a solvent, uniformly stirring, then adding zinc oxide and titanium dioxide, and stirring again until the mixture is uniform;

step IV: adding the auxiliary agent, and then uniformly stirring.