CN111725407A - Manufacturing method of laminated perovskite battery and laminated perovskite battery - Google Patents
Manufacturing method of laminated perovskite battery and laminated perovskite battery Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 230000005525 hole transport Effects 0.000 claims abstract description 96
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- 239000010703 silicon Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 16
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- 238000004528 spin coating Methods 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 9
- 229910001887 tin oxide Inorganic materials 0.000 claims description 9
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 8
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
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- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
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- 239000002243 precursor Substances 0.000 claims description 3
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- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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Abstract
The invention provides a manufacturing method of a laminated perovskite battery, which comprises the following steps: manufacturing and forming a perovskite battery with the outermost layer being a first hole transport layer; manufacturing and forming a composite silicon cell with the outermost layer being a second hole transport layer; bonding the first hole transport layer and the second hole transport layer together to form a hole transport layer. The invention also provides a laminated perovskite battery manufactured by the manufacturing method. According to the invention, the perovskite cell and the silicon cell are formed in a separated mode, and then the outermost hole transport layers of the perovskite cell and the silicon cell are combined together mechanically to form the laminated perovskite cell. In the process of forming the perovskite battery, the perovskite thin film is directly formed on the formed transparent conductive oxide substrate which is used as the top transparent electrode of the laminated perovskite battery, so that the damage to the perovskite thin film which is firstly formed when the top transparent electrode is formed later in the prior art can be avoided.
Description
Technical Field
The invention belongs to the technical field of batteries, and particularly relates to a manufacturing method of a laminated perovskite battery and the laminated perovskite battery.
Background
The energy crisis is an important problem facing the current society, and the development of a novel power generation technology mainly based on clean energy such as solar energy is an effective way for both energy supply and environmental protection. Novel photovoltaic materials represented by organometallic halogenated perovskites have gained much attention in recent years and have made great progress, wherein the photoelectric conversion efficiency of single-junction perovskite thin-film solar cells has exceeded 24%. The perovskite material has the outstanding advantages of low cost and simple process, especially adjustable band gap (1.5-2.0eV), and is a preferred material for preparing a low-cost and high-efficiency multi-junction laminated solar cell. When the yield of the perovskite component reaches more than 1GW, the cost of the perovskite component is expected to be reduced to 0.7 yuan/W.
Meanwhile, the photoelectric conversion efficiency of the single-junction crystalline silicon solar cell exceeds 26%, which is close to the theoretical efficiency limit, the technical difficulty and cost of efficiency improvement are continuously increased, and an efficiency improvement mode with lower cost is urgently sought. In the case of silicon tandem cell technology, the best matching band gap of the sub-cell is 1.75eV, and perovskite can be fully satisfied. Therefore, a stacked cell using crystalline silicon as the bottom cell and perovskite as the top cell is a technically and economically viable option. At present, the perovskite/silicon laminated solar cell is developed particularly rapidly, the photoelectric conversion efficiency reaches 28 percent, and the rapid breakthrough of 30 percent is expected.
However, the fabrication of the perovskite/silicon tandem solar cell is completed by sequentially depositing each functional layer on the substrate, and the core difficulty lies in the fabrication of the top transparent electrode. This is because the organometallic halide perovskite material decomposes in an environment of 150 c, destroying the perovskite structure, and rendering the battery useless. At present, when mature commercial transparent electrodes such as Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) are used as top electrodes, high-energy particles and local high temperature in the commonly adopted magnetron sputtering preparation process are very easy to damage perovskite thin films, and the development and application of perovskite/silicon laminated solar cells are limited.
Disclosure of Invention
In order to solve the problems of the prior art, the present invention aims to provide a method for manufacturing a laminated perovskite battery and a laminated perovskite battery.
According to an aspect of the present invention, a method of fabricating a laminated perovskite battery is provided. The manufacturing method comprises the following steps: manufacturing and forming a perovskite battery with the outermost layer being a first hole transport layer; manufacturing and forming a composite silicon cell with the outermost layer being a second hole transport layer; bonding the first hole transport layer and the second hole transport layer together to form a hole transport layer.
Further, before the bonding the first hole transport layer and the second hole transport layer together, the manufacturing method further includes: adding a hole transport layer solvent on the first hole transport layer and/or the second hole transport layer.
Further, the manufacturing of the perovskite battery with the outermost layer being the first hole transport layer includes: manufacturing and forming an electron transport layer on a transparent conductive oxide substrate; forming a perovskite layer on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate; and manufacturing and forming the first hole transport layer on the surface of the perovskite layer, which faces away from the electron transport layer, so that the first hole transport layer is positioned on the outermost layer of the perovskite battery.
Further, the manufacturing of the composite silicon cell having the second hole transport layer as the outermost layer includes: fabricating a first transparent conductive oxide layer on a first surface of a silicon cell and a second transparent conductive oxide layer on a second surface of the silicon cell, the first and second surfaces being opposite to each other; forming a metal back electrode on the surface of the second transparent conductive oxide layer, which faces away from the silicon cell; and forming the second hole transport layer on the surface of the first transparent conductive oxide layer, which faces away from the silicon cell, so that the second hole transport layer is positioned on the outermost layer of the composite silicon cell.
Further, the electron transport layer is formed on the transparent conductive oxide substrate, and the method comprises the following steps: diluting the tin oxide solution according to the ratio of the tin oxide solution to the deionized water of 1: 3; spin-coating the diluted tin oxide solution on the transparent conductive oxide substrate in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds; performing annealing at an annealing temperature of 150 ℃ for an annealing time of 30 minutes to crystallize and form the electron transport layer;
and/or, forming a perovskite layer on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate, and the perovskite layer comprises the following steps: spin-coating the perovskite precursor solution on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate, in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds; spin-coating a methyl ammonium iodide solution in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds; the perovskite layer was crystallized by annealing at an annealing temperature of 100 ℃ for an annealing time of 10 minutes.
Further, fabricating and forming the first hole transport layer on a surface of the perovskite layer facing away from the electron transport layer includes: spin-coating the prepared 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution on the surface of the perovskite layer, which is opposite to the electron transport layer, in a spin coating mode of firstly rotating speed of 1000rpm for 5 seconds and then rotating speed of 4000rpm for 40 seconds; standing for at least 24 hours to form the first hole transport layer.
Further, fabricating and forming a first transparent conductive oxide layer on a first surface of a silicon cell and a second transparent conductive oxide layer on a second surface of the silicon cell, comprising: respectively sputtering indium tin oxide films with the thickness of 150nm on the first surface and the second surface by utilizing a magnetron sputtering coating process; annealing and crystallizing the indium tin oxide thin film at an annealing temperature of 250 ℃ for an annealing time of 30 minutes to form the first transparent conductive oxide layer and the second transparent conductive oxide layer;
and/or, forming a metal back electrode on the surface of the second transparent conductive oxide layer, which faces away from the silicon cell, wherein the metal back electrode comprises: and generating a silver film with the thickness of 100nm on the surface of the second transparent conductive oxide layer, which is back to the silicon battery, by utilizing a thermal evaporation coating process to serve as the metal back electrode.
Further, forming the second hole transport layer on a surface of the first transparent conductive oxide layer facing away from the silicon cell includes: spin-coating the prepared 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution on the surface of the first transparent conductive oxide layer, which is opposite to the silicon battery, in a spin-coating mode of firstly rotating speed of 1000rpm for 5 seconds and then rotating speed of 4000rpm for 40 seconds; standing for at least 24 hours to form the second hole transport layer.
Further, a method of forming a hole transport layer includes: adding a chlorobenzene solvent on the first hole transport layer and/or the second hole transport layer; bringing the first hole transport layer and the second hole transport layer into contact with each other and applying opposing forces to the first hole transport layer and the second hole transport layer; and baking the first hole transport layer and the second hole transport layer which are in contact with each other at a baking temperature of 50 ℃ for 5 minutes, so that the contact surfaces of the first hole transport layer and the second hole transport layer are dissolved and then recrystallized to form a hole transport layer.
According to another aspect of the invention, a laminated perovskite battery manufactured by the manufacturing method of the laminated perovskite battery is further provided.
The invention has the beneficial effects that: according to the manufacturing method of the laminated perovskite battery, the perovskite battery and the silicon battery are formed in a separated mode, and then the outermost hole transport layers of the perovskite battery and the silicon battery are combined together in a mechanical mode to form the laminated perovskite battery. In the process of forming the perovskite battery, the perovskite thin film is directly formed on the formed transparent conductive oxide substrate which is used as the top transparent electrode of the laminated perovskite battery, so that the damage to the perovskite thin film which is firstly formed when the top transparent electrode is formed later in the prior art can be avoided, and the development and the application of the perovskite/silicon laminated solar battery are expanded.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
fig. 1 is a flow diagram of a method of fabricating a laminated perovskite battery according to an embodiment of the invention;
fig. 2A to 2D are process diagrams for fabricating a perovskite cell having a first hole transport layer as an outermost layer according to an embodiment of the present invention;
fig. 3A to 3C are process diagrams of fabricating a composite silicon cell forming the second hole transport layer as the outermost layer according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a stacked perovskite cell fabricated by the method for fabricating a stacked perovskite cell shown in fig. 1 according to an embodiment of the invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
As known in the background art, the process of fabricating the prior art laminated perovskite cell is to sequentially form all required functional layers on a substrate, so that when a top transparent electrode, such as Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO), is fabricated, high energy particles and local high temperature in a magnetron sputtering process commonly used are very likely to damage a perovskite thin film, thereby limiting the development and application of the perovskite/silicon laminated solar cell.
Based on the above, in the manufacturing process of the laminated perovskite battery provided by the invention, the perovskite thin film can be directly formed on the transparent electrode substrate which is used as the top transparent electrode by manufacturing the separated perovskite battery and the silicon battery, so that the perovskite thin film is prevented from being damaged when the top transparent electrode is manufactured. The following examples are used to describe the method of fabricating the laminated perovskite cell of the present invention in detail.
Fig. 1 is a flow diagram of a method of fabricating a laminated perovskite battery according to an embodiment of the invention.
Referring to fig. 1, a method of fabricating a laminated perovskite battery according to an embodiment of the present invention includes step S110, step S120, and step S130.
Specifically, in step S110, a perovskite battery is fabricated which forms the first hole transport layer as the outermost layer.
Fig. 2A to 2D are process diagrams for fabricating a perovskite cell having a first hole transport layer as an outermost layer according to an embodiment of the present invention.
Here, a method of fabricating a perovskite battery forming a first hole transport layer as an outermost layer according to an embodiment of the present invention includes:
first, referring to fig. 2A, a transparent conductive oxide substrate (e.g., ITO, FTO, etc.) 11 is cleaned. Specifically, the transparent conductive oxide substrate 11 was ultrasonically cleaned with a detergent, deionized water, acetone, and absolute ethanol for 15 minutes, respectively, and then air-dried with a nitrogen flow. Next, the cleaned transparent conductive oxide substrate 11 was treated with ultraviolet light for 15 minutes. Here, the transparent conductive oxide substrate 11 will serve as the top transparent electrode of the stacked perovskite cell.
Next, referring to fig. 2B, an electron transit layer 12 is formed on the transparent conductive oxide substrate 11. Specifically, the tin oxide solution is diluted by the ratio of the tin oxide solution to deionized water being 1: 3; then spin-coating the diluted tin oxide solution on the transparent conductive oxide substrate 11 in a spin-coating manner with a rotation speed of 3000rpm and a rotation time of 30 seconds; finally, the electron transit layer 12 is crystallized by annealing at an annealing temperature of 150 ℃ for an annealing time of 30 minutes.
Next, referring to fig. 2C, a perovskite layer 13 is formed on the surface of the electron transport layer 12 facing away from the transparent conductive oxide substrate 11. Specifically, a perovskite precursor solution (e.g., lead iodide (PbI)) was spin-coated at a rotation speed of 3000rpm for a spin time of 30 seconds2) Solution, etc.) is spin-coated onto the surface of the electron transport layer 12 facing away from the transparent conductive oxide substrate 11; then spin-coating a Methyl Ammonium Iodide (MAI) solution in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds; finally, the perovskite layer 13 is crystallized by annealing at an annealing temperature of 100 ℃ for an annealing time of 10 minutes.
Finally, referring to fig. 2D, the first hole transport layer 14 is formed on the surface of the perovskite layer 13 facing away from the electron transport layer 12, so that the first hole transport layer 14 is located at the outermost layer of the perovskite cell. Specifically, the prepared 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution (i.e., Spiro-OMeTAD solution) is spin-coated on the surface of the perovskite layer 13 facing away from the electron transport layer 12 in a spin-coating manner of firstly rotating at 1000rpm for 5 seconds and then rotating at 4000rpm for 40 seconds; and then left to stand for at least two minutes by drying in the shade and for at least 24 hours, to be oxidized to form the first hole transporting layer 14.
With continued reference to fig. 1, in step S120, a composite silicon cell is fabricated with the outermost layer being the second hole transport layer.
Fig. 3A to 3C are process diagrams of fabricating a composite silicon cell having a second hole transport layer as an outermost layer according to an embodiment of the present invention.
Here, a method of fabricating a composite silicon cell forming an outermost layer of a second hole transport layer according to an embodiment of the present invention includes:
first, referring to fig. 3A, a first transparent conductive oxide layer 22 is formed on a first surface of a silicon cell 21, and a second transparent conductive oxide layer 23 is formed on a second surface of the silicon cell 21, the first surface and the second surface being opposite to each other. Specifically, indium tin oxide films (or other transparent conductive films such as tin oxyfluoride) with the thickness of 150nm are respectively formed on the first surface and the second surface by sputtering through a magnetron sputtering coating process; the indium tin oxide thin film was then annealed and crystallized at an annealing temperature of 250 c for an annealing time of 30 minutes, thereby forming a first transparent conductive oxide layer 22 and a second transparent conductive oxide layer 23.
Here, the silicon cell 21 includes, in order from the second transparent conductive oxide layer 23 to the first transparent conductive oxide layer 22: a p-type silicon layer 21A, a first i-type silicon (intrinsic silicon) layer 21B, C type silicon (crystalline silicon) layer 21C, a second i-type silicon (intrinsic silicon) layer 21D, and an n-type silicon layer 21E. Of course, the structure here is merely an example of a silicon cell, and the present invention is not limited thereto.
Next, referring to fig. 3B, a metal back electrode 24 is formed on the surface of the second transparent conductive oxide layer 23 facing away from the silicon cell 21. Specifically, a silver thin film having a thickness of 100nm is formed on the surface of the second transparent conductive oxide layer 23 facing away from the silicon cell 21 by a thermal evaporation plating process as the metal back electrode 24. Of course, the silver thin film is merely an example, and the present invention is not limited thereto.
Finally, referring to fig. 3C, a second hole transport layer 25 is formed on the surface of the first transparent conductive oxide layer 22 facing away from the silicon cell 21, such that the second hole transport layer 25 is located at the outermost layer of the composite silicon cell. Specifically, the prepared 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution (i.e., Spiro-OMeTAD solution) is spin-coated on the surface of the first transparent conductive oxide layer 22 facing away from the silicon cell 21 in a spin-coating manner of firstly rotating at 1000rpm for 5 seconds and then at 4000rpm for 40 seconds; and then left to stand for at least two minutes by drying in the shade and for at least 24 hours, to be oxidized to form the second hole transport layer 25.
With continued reference to fig. 1, in step S130, the first hole transport layer and the second hole transport layer are bonded together to form a hole transport layer.
To realize step S130, specifically, first, a chlorobenzene solvent is added on the first hole transport layer 14 and/or the second hole transport layer 25.
Next, the first hole transport layer 14 and the second hole transport layer 25 are brought into contact with each other, and an opposing force is applied to the first hole transport layer 14 and the second hole transport layer 25. Here, a force may be applied mechanically to the first hole transport layer 14 and the second hole transport layer 25 in opposition to bring them into close contact with each other.
Finally, the first hole transporting layer 14 and the second hole transporting layer 25, which are in contact with each other, are baked at a baking temperature of 50 ℃ for 5 minutes, so that the contact surfaces of the first hole transporting layer 14 and the second hole transporting layer 25 are dissolved and then recrystallized to form a hole transporting layer 1425, as shown in fig. 4.
In summary, in the method for manufacturing a laminated perovskite battery according to the embodiment of the invention, the perovskite battery and the silicon battery are separately formed, and then the outermost hole transport layers of the perovskite battery and the silicon battery are mechanically combined to form the laminated perovskite battery. In the process of forming the perovskite battery, the perovskite thin film is directly formed on the formed transparent conductive oxide substrate which is used as the top transparent electrode of the laminated perovskite battery, so that the damage to the perovskite thin film which is firstly formed when the top transparent electrode is formed later in the prior art can be avoided, and the development and the application of the perovskite/silicon laminated solar battery are expanded.
Furthermore, according to another embodiment of the present invention, there is provided a stacked perovskite battery manufactured by the above method for manufacturing a stacked perovskite battery, wherein the structure of the stacked perovskite battery is as shown in fig. 4.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing description has been directed to specific embodiments of this disclosure. Other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results.
The terminology used in the description of the one or more embodiments is for the purpose of describing the particular embodiments only and is not intended to be limiting of the description of the one or more embodiments. As used in one or more embodiments of the present specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, third, etc. may be used in one or more embodiments of the present description to describe various information, such information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of one or more embodiments herein. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
The above description is only for the purpose of illustrating the preferred embodiments of the one or more embodiments of the present disclosure, and is not intended to limit the scope of the one or more embodiments of the present disclosure, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the one or more embodiments of the present disclosure should be included in the scope of the one or more embodiments of the present disclosure.
Claims (10)
1. A method of fabricating a laminated perovskite battery, the method comprising:
manufacturing and forming a perovskite battery with the outermost layer being a first hole transport layer;
manufacturing and forming a composite silicon cell with the outermost layer being a second hole transport layer;
bonding the first hole transport layer and the second hole transport layer together to form a hole transport layer.
2. The method of manufacturing according to claim 1, wherein before bonding the first hole transport layer and the second hole transport layer together, the method of manufacturing further comprises: adding a hole transport layer solvent on the first hole transport layer and/or the second hole transport layer.
3. The method of manufacturing according to claim 1, wherein the manufacturing of the perovskite battery forming the outermost layer as the first hole transport layer includes:
manufacturing and forming an electron transport layer on a transparent conductive oxide substrate;
forming a perovskite layer on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate;
and manufacturing and forming the first hole transport layer on the surface of the perovskite layer, which faces away from the electron transport layer, so that the first hole transport layer is positioned on the outermost layer of the perovskite battery.
4. The fabrication method according to claim 1, wherein the fabricating of the composite silicon cell forming the outermost layer which is the second hole transport layer comprises:
fabricating a first transparent conductive oxide layer on a first surface of a silicon cell and a second transparent conductive oxide layer on a second surface of the silicon cell, the first and second surfaces being opposite to each other;
forming a metal back electrode on the surface of the second transparent conductive oxide layer, which faces away from the silicon cell;
and forming the second hole transport layer on the surface of the first transparent conductive oxide layer, which faces away from the silicon cell, so that the second hole transport layer is positioned on the outermost layer of the composite silicon cell.
5. The method of manufacturing according to claim 3,
the electron transport layer is manufactured and formed on the transparent conductive oxide substrate, and the method comprises the following steps:
diluting the tin oxide solution according to the ratio of the tin oxide solution to the deionized water of 1: 3;
spin-coating the diluted tin oxide solution on the transparent conductive oxide substrate in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds;
performing annealing at an annealing temperature of 150 ℃ for an annealing time of 30 minutes to crystallize and form the electron transport layer;
and/or, forming a perovskite layer on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate, and the perovskite layer comprises the following steps:
spin-coating the perovskite precursor solution on the surface of the electron transport layer, which is opposite to the transparent conductive oxide substrate, in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds;
spin-coating a methyl ammonium iodide solution in a spin-coating mode with the rotating speed of 3000rpm and the rotating time of 30 seconds;
the perovskite layer was crystallized by annealing at an annealing temperature of 100 ℃ for an annealing time of 10 minutes.
6. The production method according to claim 3 or 5, wherein the production of the first hole transport layer on the surface of the perovskite layer facing away from the electron transport layer comprises:
spin-coating the prepared 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution on the surface of the perovskite layer, which is opposite to the electron transport layer, in a spin coating mode of firstly rotating speed of 1000rpm for 5 seconds and then rotating speed of 4000rpm for 40 seconds;
standing for at least 24 hours to form the first hole transport layer.
7. The method of manufacturing according to claim 4,
fabricating a first transparent conductive oxide layer on a first surface of a silicon cell and a second transparent conductive oxide layer on a second surface of the silicon cell, comprising:
respectively sputtering indium tin oxide films with the thickness of 150nm on the first surface and the second surface by utilizing a magnetron sputtering coating process;
annealing and crystallizing the indium tin oxide thin film at an annealing temperature of 250 ℃ for an annealing time of 30 minutes to form the first transparent conductive oxide layer and the second transparent conductive oxide layer;
and/or, forming a metal back electrode on the surface of the second transparent conductive oxide layer, which faces away from the silicon cell, wherein the metal back electrode comprises:
and generating a silver film with the thickness of 100nm on the surface of the second transparent conductive oxide layer, which is back to the silicon battery, by utilizing a thermal evaporation coating process to serve as the metal back electrode.
8. The fabrication method according to claim 4 or 7, wherein fabricating and forming the second hole transport layer on a surface of the first transparent conductive oxide layer facing away from the silicon cell comprises:
spin-coating the prepared 2,2',7,7' -tetra [ N, N-di (4-methoxyphenyl) amino ] -9,9' -spirobifluorene solution on the surface of the first transparent conductive oxide layer, which is opposite to the silicon battery, in a spin-coating mode of firstly rotating speed of 1000rpm for 5 seconds and then rotating speed of 4000rpm for 40 seconds;
standing for at least 24 hours to form the second hole transport layer.
9. The method of claim 2, wherein the step of forming a hole transport layer comprises:
adding a chlorobenzene solvent on the first hole transport layer and/or the second hole transport layer;
bringing the first hole transport layer and the second hole transport layer into contact with each other and applying opposing forces to the first hole transport layer and the second hole transport layer;
and baking the first hole transport layer and the second hole transport layer which are in contact with each other at a baking temperature of 50 ℃ for 5 minutes, so that the contact surfaces of the first hole transport layer and the second hole transport layer are dissolved and then recrystallized to form a hole transport layer.
10. A laminated perovskite battery manufactured by the method for manufacturing a laminated perovskite battery as defined in any one of claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864262A (en) * | 2021-01-20 | 2021-05-28 | 西安电子科技大学 | Perovskite-silicon two-end series battery based on mechanical pressing and preparation method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160105120A (en) * | 2015-02-27 | 2016-09-06 | 성균관대학교산학협력단 | Organic or organic-inorganic hybrid solar cell comprising transparent electrode and method of manufacturing thereof |
| KR101707050B1 (en) * | 2015-11-03 | 2017-02-17 | 재단법인대구경북과학기술원 | Preparation for method of perovskite absorber layer and perovskite solar cells comprising the perovskite absorber layer thereby |
| CN108023020A (en) * | 2016-11-03 | 2018-05-11 | 现代自动车株式会社 | Binding type perovskite preparation method of solar battery |
| CN108447926A (en) * | 2018-05-18 | 2018-08-24 | 嘉兴尚羿新能源有限公司 | A kind of perovskite/silicon heterogenous solar energy laminated cell structure and preparation method thereof |
| WO2019074616A2 (en) * | 2017-09-15 | 2019-04-18 | Energy Everywhere, Inc. | Fabrication of stacked perovskite structures |
-
2020
- 2020-06-18 CN CN202010559890.5A patent/CN111725407A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160105120A (en) * | 2015-02-27 | 2016-09-06 | 성균관대학교산학협력단 | Organic or organic-inorganic hybrid solar cell comprising transparent electrode and method of manufacturing thereof |
| KR101707050B1 (en) * | 2015-11-03 | 2017-02-17 | 재단법인대구경북과학기술원 | Preparation for method of perovskite absorber layer and perovskite solar cells comprising the perovskite absorber layer thereby |
| CN108023020A (en) * | 2016-11-03 | 2018-05-11 | 现代自动车株式会社 | Binding type perovskite preparation method of solar battery |
| WO2019074616A2 (en) * | 2017-09-15 | 2019-04-18 | Energy Everywhere, Inc. | Fabrication of stacked perovskite structures |
| CN108447926A (en) * | 2018-05-18 | 2018-08-24 | 嘉兴尚羿新能源有限公司 | A kind of perovskite/silicon heterogenous solar energy laminated cell structure and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112864262A (en) * | 2021-01-20 | 2021-05-28 | 西安电子科技大学 | Perovskite-silicon two-end series battery based on mechanical pressing and preparation method |
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