CN111718717A - Preparation method of oxide layer buffer etching solution for active matrix organic light-emitting diode - Google Patents
Preparation method of oxide layer buffer etching solution for active matrix organic light-emitting diode Download PDFInfo
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- CN111718717A CN111718717A CN202010543103.8A CN202010543103A CN111718717A CN 111718717 A CN111718717 A CN 111718717A CN 202010543103 A CN202010543103 A CN 202010543103A CN 111718717 A CN111718717 A CN 111718717A
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- oxide layer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
The embodiment of the invention discloses a preparation method of an oxide layer buffer etching solution for an active matrix organic light-emitting diode, which comprises the following steps of firstly, introducing hydrogen fluoride gas into pure water, spraying and absorbing the pure water to generate a hydrofluoric acid solution, and then adding a sodium chlorite solution to prepare a mixture I; secondly, introducing ammonia gas into the mixture I, spraying and absorbing the ammonia gas, and then adding an ammonium bicarbonate solution to prepare a mixture II; and step three, pouring the mixture II into the step one to spray the hydrogen fluoride gas, stirring the mixture uniformly after the hydrogen fluoride gas is completely absorbed, adding the additive, and filtering the mixture after the additive is added. The preparation method can directly obtain the ammonium fluoride and hydrofluoric acid mixed solution with different proportions by adjusting the proportion of the hydrogen fluoride and the ammonia gas, the whole process can realize continuous production, the production efficiency is greatly improved, the energy consumption is reduced, and the environmental protection is promoted. The oxide layer buffering etching solution has high purity, and each milliliter of particles with the particle size of more than 0.2 mu m is less than or equal to 10.
Description
Technical Field
The invention belongs to the technical field of chemical engineering, and particularly relates to a preparation method of an oxide layer buffer etching solution for an active matrix organic light-emitting diode.
Background
An active matrix organic light emitting diode display is an accessory device for displaying a picture of a certain electronic document transmitted through a specific transmission apparatus and reflecting the picture to human eyes to facilitate a user to obtain desired information, and is widely used in the field of picture display. The etching solution is a liquid for carving by utilizing the characteristics of an erosion material, and has wide application in the field of current industrial production, particularly microelectronic processing.
At present, the proportion of ammonium fluoride and hydrofluoric acid is often required to be adjusted according to different materials in the use process of the etching solution, and enterprises need to stop production and adjust in order to produce solutions with different proportions of ammonium fluoride and hydrofluoric acid, so that the production efficiency is greatly reduced.
Disclosure of Invention
Therefore, the embodiment of the invention provides a preparation method of an oxide layer buffer etching solution for an active matrix organic light emitting diode, which aims to solve the problems that in the prior art, in order to produce solutions with different proportions of ammonium fluoride and hydrofluoric acid, enterprises need to stop production and adjust, and the production efficiency is greatly reduced.
In order to achieve the above object, the embodiments of the present invention provide the following technical solutions:
according to a first aspect of the embodiments of the present invention, there is provided a method for preparing an oxide layer buffered etching solution for an active matrix organic light emitting diode, comprising the steps of:
introducing pure water into hydrogen fluoride gas, spraying and absorbing the pure water to generate a hydrofluoric acid solution, and then adding a sodium chlorite solution to prepare a mixture I for later use;
secondly, introducing ammonia gas into the mixture I, spraying and absorbing the ammonia gas, and then adding an ammonium bicarbonate solution to prepare a mixture II for later use;
and step three, pouring the mixture II into the step one to spray hydrogen fluoride gas, stirring uniformly after the hydrogen fluoride gas is completely absorbed, adding an additive, and filtering to obtain the oxide layer buffer etching solution for the active matrix organic light-emitting diode.
Further, the second step comprises adjusting the ratio of the ammonia gas to the hydrogen fluoride gas in the first step, so as to obtain ammonium fluoride hydrofluoric acid solutions with different ratios.
Further, the third step includes filtering the mixture through a 0.2 μm filter after the additives are added to remove 0.2 μm particles.
Further, the additive in the third step is a surfactant, and the surfactant is a nonionic surfactant.
Further, the nonionic surfactant is span nonionic surfactant.
According to a second aspect of embodiments of the present invention, there is provided an oxide layer buffered etchant for an active matrix organic light emitting diode, the oxide layer buffered etchant being obtained by the method according to any one of claims 1 to 5.
Furthermore, the anion of the impurity in the oxide layer buffer etching solution is not more than 0.1 PPM.
Furthermore, the impurity cation in the oxide layer buffering etching solution is not more than 0.1 PPb.
Furthermore, the number of particles with the particle size of more than 0.2 mu m in the oxide layer buffer etching solution is less than or equal to 10 per milliliter.
According to a third aspect of the embodiments of the present invention, there is provided an application of an oxide layer buffered etching solution in an active matrix organic light emitting diode display.
The embodiment of the invention has the following advantages: the embodiment of the invention provides a preparation method of an oxide layer buffered etching solution for an active matrix organic light-emitting diode, which comprises the steps of absorbing high-purity hydrogen fluoride gas by pure water, introducing ammonia gas to form a mixed solution of ammonium fluoride and hydrofluoric acid, and then adding an additive to form the oxide layer buffered etching solution. In addition, the oxide layer buffered etching solution has high purity, the number of particles with the particle size of more than 0.2 mu m per milliliter is less than or equal to 10, the content of impurity anions is not more than 0.1PPM, and the content of impurity cations is not more than 0.1 PPb.
Drawings
Fig. 1 is a process flow chart of an oxide layer buffered etching solution for an active matrix organic light emitting diode in embodiment 1 of the invention.
Detailed Description
The present invention is described in terms of particular embodiments, other advantages and features of the invention will become apparent to those skilled in the art from the following disclosure, and it is to be understood that the described embodiments are merely exemplary of the invention and that it is not intended to limit the invention to the particular embodiments disclosed. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that unless otherwise specified, technical terms or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the present invention pertains, and experimental materials in the following examples are commercially available unless otherwise specified, and the experimental methods described are general experimental methods unless otherwise specified.
In view of the deficiencies in the prior art, the inventor of the present invention has made extensive studies and extensive practices to propose the technical solution of the present invention, and further explains the technical solution, the implementation process and the principle thereof, etc.
Example 1
The embodiment provides a preparation method of an oxide layer buffer etching solution for an active matrix organic light-emitting diode, which comprises the following steps:
introducing pure water into hydrogen fluoride gas, spraying and absorbing the pure water to generate a hydrofluoric acid solution, and then adding a sodium chlorite solution to prepare a mixture I for later use;
secondly, introducing ammonia gas into the mixture I, spraying and absorbing the ammonia gas, and then adding an ammonium bicarbonate solution to prepare a mixture II for later use;
and step three, pouring the mixture II into the step one to spray hydrogen fluoride gas, stirring uniformly after the hydrogen fluoride gas is completely absorbed, adding an additive, and filtering to obtain the oxide layer buffer etching solution for the active matrix organic light-emitting diode.
Preferably, the additive in step three is a surfactant, and the surfactant is a nonionic surfactant. Wherein, the nonionic surfactant is span nonionic surfactant, and the effect is particularly good.
Example 2
On the basis of the technical scheme of the embodiment 1, the oxide layer buffered etching solution for the active matrix organic light emitting diode is provided, wherein impurity anions in the oxide layer buffered etching solution are not more than 0.1PPM, impurity cations in the oxide layer buffered etching solution are not more than 0.1PPb, and each milliliter of particles with the particle size of more than 0.2 mu m in the oxide layer buffered etching solution is less than or equal to 10.
Example 3
This embodiment provides a use of the oxide layer buffered etchant according to any one of claims 6-9 in an active matrix organic light emitting diode display.
Test No.)
A method of preparing an etching solution by directly adding ammonia gas, hydrogen fluoride and a surfactant into pure water is used as a control group 1; adding hydrogen fluoride into pure water, introducing ammonia gas into the solution, and adding a surfactant as a control group 2; using the method of example 1 of the present application as an experimental group, solutions of ammonium fluoride and hydrofluoric acid at mass ratios of 1:1, 1:1.5, 1:2 were prepared, respectively, and the time taken was recorded, and the experimental results are shown in the following table:
the experimental results show that: the preparation method does not need to stop, and the mixed solution of ammonium fluoride and hydrofluoric acid with different proportions can be directly obtained by adjusting the proportion of hydrogen fluoride and ammonia gas, so that the whole process can be used for continuous production, the production efficiency is greatly improved, the energy consumption is reduced, and the environmental protection is improved; in addition, this application is through adding ammonium bicarbonate solution to the solution that will prepare sprays the ammonia, adds the additive after the stirring, has further promoted the etching ability of solution, thereby has promoted etching rate.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.
Claims (10)
1. A preparation method of an oxide layer buffer etching solution for an active matrix organic light emitting diode is characterized by comprising the following steps:
introducing pure water into hydrogen fluoride gas, spraying and absorbing the pure water to generate a hydrofluoric acid solution, and then adding a sodium chlorite solution to prepare a mixture I for later use;
secondly, introducing ammonia gas into the mixture I, spraying and absorbing the ammonia gas, and then adding an ammonium bicarbonate solution to prepare a mixture II for later use;
and step three, pouring the mixture II into the step one to spray hydrogen fluoride gas, stirring uniformly after the hydrogen fluoride gas is completely absorbed, adding an additive, and filtering to obtain the oxide layer buffer etching solution for the active matrix organic light-emitting diode.
2. The method of claim 1, wherein: and the second step comprises adjusting the proportion of the ammonia gas and the hydrogen fluoride gas in the first step so as to obtain ammonium fluoride hydrofluoric acid solutions with different proportions.
3. The method of claim 1, wherein: and the third step comprises the steps of adding the additive and filtering the mixture through a 0.2-micron filter to remove 0.2-micron particles.
4. The method of claim 1, wherein: the additive in the third step is a surfactant, and the surfactant is a nonionic surfactant.
5. The method of claim 1, wherein: the nonionic surfactant is span nonionic surfactant.
6. An oxide layer buffered etching solution for an active matrix organic light emitting diode, wherein the oxide layer buffered etching solution is prepared by the method of any one of claims 1 to 5.
7. The oxide layer-buffered etching solution for AMOLED as claimed in claim 6, wherein: and impurity anions in the oxide layer buffered etching solution are not more than 0.1 PPM.
8. The oxide layer-buffered etching solution for AMOLED as claimed in claim 6, wherein: and the impurity cation in the oxide layer buffer etching solution is not more than 0.1 PPb.
9. The oxide layer-buffered etching solution for AMOLED as claimed in claim 6, wherein: and each milliliter of particles with the particle size of more than 0.2 mu m in the oxide layer buffer etching solution is less than or equal to 10.
10. Use of the oxide layer buffered etchant according to any of claims 6-9 in an active matrix organic light emitting diode display.
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| CN202010543103.8A CN111718717A (en) | 2020-06-15 | 2020-06-15 | Preparation method of oxide layer buffer etching solution for active matrix organic light-emitting diode |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6027571A (en) * | 1996-08-28 | 2000-02-22 | Stella Chemifa Kabushiki Kaisha | Surface treatment for micromachining |
| CN108028198A (en) * | 2015-08-26 | 2018-05-11 | 株式会社Adeka | Etchant and engraving method |
| CN109055937A (en) * | 2018-07-03 | 2018-12-21 | 杭州电子科技大学 | A kind of chemical etching method obtaining high-transmission rate aluminium alloy |
-
2020
- 2020-06-15 CN CN202010543103.8A patent/CN111718717A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6027571A (en) * | 1996-08-28 | 2000-02-22 | Stella Chemifa Kabushiki Kaisha | Surface treatment for micromachining |
| CN108028198A (en) * | 2015-08-26 | 2018-05-11 | 株式会社Adeka | Etchant and engraving method |
| CN109055937A (en) * | 2018-07-03 | 2018-12-21 | 杭州电子科技大学 | A kind of chemical etching method obtaining high-transmission rate aluminium alloy |
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Application publication date: 20200929 |