CN111710768A - Manufacturing method of LED chip - Google Patents
Manufacturing method of LED chip Download PDFInfo
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- CN111710768A CN111710768A CN202010628160.6A CN202010628160A CN111710768A CN 111710768 A CN111710768 A CN 111710768A CN 202010628160 A CN202010628160 A CN 202010628160A CN 111710768 A CN111710768 A CN 111710768A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Abstract
The invention provides a manufacturing method of an LED chip, which is characterized in that a reflector structure layer with a composite silver/gold two-layer structure is arranged, and a gold-silver alloy layer with a preset thickness is formed on a contact surface between a silver metal layer and a metal layer in the subsequent heat treatment process, wherein the silver metal layer and the gold metal layer can realize excellent reflection effects at different wave bands, the luminous brightness of the LED chip is improved, the formed gold-silver alloy layer can improve the overall physical and chemical stability of the reflector structure layer, and the LED chip structure with high reflectivity and high stability is further realized. And because the gold metal layer is not good with the material connection effect of adjacent other layer, can further improve the structural stability of reflector structural layer through this silver metal layer.
Description
Technical Field
The invention relates to the technical field of quaternary ultra-high brightness LED chips, in particular to a manufacturing method of an LED chip.
Background
A Light Emitting Diode (LED) is a semiconductor Diode that converts electrical energy into Light energy and emits visible Light of various colors such as red, yellow, green, and blue, and invisible Light of infrared and ultraviolet.
However, the reflective efficiency of the mirror structure layer in the current light emitting diode is low and the structural stability is poor.
Disclosure of Invention
In view of the above, in order to solve the above problems, the present invention provides a method for manufacturing an LED chip, which includes the following steps:
a manufacturing method of an LED chip comprises the following steps:
providing a first substrate;
forming an epitaxial layer on the first substrate;
sequentially forming a silver metal layer and a gold metal layer on one side of the epitaxial layer, which is far away from the first substrate, so as to form a reflector structure layer;
carrying out heat treatment to form an alloy layer on the contact surface of the silver metal layer and the gold metal layer;
and carrying out substrate transfer and manufacturing an electrode structure.
Preferably, in the above manufacturing method, the first substrate is a GaAs substrate.
Preferably, in the above manufacturing method, the forming an epitaxial layer on the first substrate includes:
and sequentially growing an N-type semiconductor layer, an MQW layer and a P-type semiconductor layer on the first substrate.
Preferably, in the above manufacturing method, after the epitaxial layer is formed on the first substrate, the manufacturing method further includes:
and forming an oxide layer or a fluoride layer on the side of the epitaxial layer, which faces away from the first substrate.
Preferably, in the above manufacturing method, the oxide layer is SiO2A layer or an ITO layer.
Preferably, in the above manufacturing method, the fluoride layer is a magnesium fluoride layer or an aluminum fluoride layer.
Preferably, in the above manufacturing method, the manufacturing method further includes:
carrying out hole digging treatment on the oxide layer or the fluoride layer;
and forming a P-type ohmic contact layer, wherein the P-type ohmic contact layer is connected with the epitaxial layer through the oxide layer or the fluoride layer.
Preferably, in the above manufacturing method, before the substrate transfer, the manufacturing method further includes:
and sequentially forming a metal barrier layer and a bonding layer on one side of the gold metal layer, which is far away from the first substrate.
Preferably, in the above manufacturing method, the performing substrate transfer includes:
providing a second substrate;
bonding the second substrate and the bonding layer;
and removing the first substrate.
Preferably, in the above manufacturing method, the second substrate is a Si substrate.
Preferably, in the above manufacturing method, the manufacturing of the electrode structure includes:
forming an N electrode on one side of the epitaxial layer, which is far away from the second substrate;
and thinning the second substrate, and forming a P electrode on one side of the second substrate, which is far away from the epitaxial layer.
Preferably, in the above manufacturing method, the temperature of the heat treatment is 300 ℃ to 500 ℃.
Preferably, in the above manufacturing method, the manufacturing method further includes:
cutting along the reserved cutting path in a manner of front-side fusing and cutting by adopting nanosecond or picosecond ultraviolet laser equipment to form an independent LED chip unit;
and after the laser front side is cut, the side walls of the LED chip unit reflector structure layers are all alloy layers.
Preferably, in the above manufacturing method, the thickness of the silver metal layer is 500 a to 1500 a.
Preferably, in the above manufacturing method, the thickness of the gold metal layer is two times or more the thickness of the silver metal layer.
Compared with the prior art, the invention has the following beneficial effects:
according to the manufacturing method of the LED chip, the reflector structure layer with the composite silver/gold two-layer structure is arranged, and the gold-silver alloy layer with the preset thickness is formed on the contact surface between the silver metal layer and the metal layer in the subsequent heat treatment process, wherein the silver metal layer and the gold metal layer can achieve excellent reflection effects at different wave bands, the light-emitting brightness of the LED chip is improved, the formed gold-silver alloy layer can improve the overall physical and chemical stability of the reflector structure layer, and the LED chip structure with high reflectivity and high stability is further achieved.
And because the gold metal layer is not good with the material connection effect of adjacent other layer, can further improve the structural stability of reflector structural layer through this silver metal layer.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing an LED chip according to an embodiment of the present invention;
FIGS. 2-6 are schematic structural diagrams corresponding to the manufacturing method shown in FIG. 1;
fig. 7 is a schematic flow chart of another method for manufacturing an LED chip according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram corresponding to the manufacturing method shown in FIG. 7;
fig. 9 is a schematic flowchart of a method for manufacturing an LED chip according to another embodiment of the present invention;
FIGS. 10-11 are schematic structural views corresponding to the method of FIG. 9;
fig. 12 is a schematic flowchart of a method for manufacturing an LED chip according to another embodiment of the present invention;
FIGS. 13-14 are schematic structural views corresponding to the method of FIG. 12;
fig. 15 is a schematic flowchart of a method for manufacturing an LED chip according to another embodiment of the present invention;
FIGS. 16-18 are schematic structural views corresponding to the method of FIG. 15;
fig. 19 is a schematic flowchart of a method for manufacturing an LED chip according to another embodiment of the present invention;
FIGS. 20-22 are schematic structural views corresponding to the method of FIG. 19;
fig. 23 is a schematic flowchart of a method for manufacturing an LED chip according to another embodiment of the present invention;
fig. 24-25 are schematic structural diagrams corresponding to the manufacturing method shown in fig. 23.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic flow chart illustrating a method for manufacturing an LED chip according to an embodiment of the present invention.
The manufacturing method comprises the following steps:
s101: as shown in fig. 2, a first substrate 21 is provided.
S102: as shown in fig. 3, an epitaxial layer 31 is formed on the first substrate 21.
S103: as shown in fig. 4, a silver metal layer 41 and a gold metal layer 42 are sequentially formed on the side of the epitaxial layer 31 away from the first substrate 21 to form a mirror structure layer.
S104: as shown in fig. 5, a heat treatment is performed to form an alloy layer 43 having a predetermined thickness on the contact surface between the silver metal layer 41 and the gold metal layer 42.
S105: and carrying out substrate transfer and manufacturing an electrode structure.
In this embodiment, by setting the reflector structure layer of the composite silver/gold two-layer structure, in the subsequent heat treatment process, a gold-silver alloy layer with a preset thickness is formed on the contact surface between the silver metal layer and the metal layer, wherein the silver metal layer and the gold metal layer can achieve excellent reflection effects at different wave bands, and the light-emitting brightness of the LED chip is improved, and the formed gold-silver alloy layer can improve the overall physical and chemical stability characteristics of the reflector structure layer, thereby realizing an LED chip structure with high reflectivity and high stability.
In addition, because the connection effect of the gold metal layer and other adjacent layers is poor, compared with the gold metal layer, the silver metal layer has a good connection effect, and therefore the structural stability of the reflector structure layer can be further improved through the silver metal layer.
Further, based on the above embodiments of the present invention, the first substrate includes but is not limited to a GaAs substrate, and may be a substrate made of other materials under some other production requirements, which are not limited in the embodiments of the present invention.
Further, in accordance with the above-mentioned embodiment of the present invention, step S102, the forming an epitaxial layer 31 on the first substrate 21 includes:
as shown in fig. 6, an N-type semiconductor layer 311, an MQW layer 312, and a P-type semiconductor layer 313 are sequentially grown on the first substrate 21.
In this embodiment, the epitaxial layer may further include other film structures, and in this embodiment of the present invention, a simple epitaxial layer structure is merely illustrated, and the structure is not limited thereto.
Further, based on the above embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic flow chart of another method for manufacturing an LED chip according to an embodiment of the present invention.
After the epitaxial layer is formed on the first substrate, the manufacturing method further comprises:
s106: as shown in fig. 8, an oxide or fluoride layer 81 is formed on the side of the epitaxial layer 31 facing away from the first substrate 21.
In this embodiment, the oxide layer or the fluoride layer 81 is mainly used to increase the reflectivity of the mirror structure layer and to force the current spreading effect.
The method includes, but is not limited to, forming an oxide layer or a fluoride layer on a side of the epitaxial layer facing away from the first substrate by evaporation or sputtering.
Further, according to the above embodiments of the present invention, the oxide layer is SiO2A layer or an ITO layer.
In this embodiment, the oxide layer is a transparent oxide layer, including but not limited to SiO2A layer or an ITO layer, and may also be other transparent oxide layers.
Further, according to the above embodiments of the present invention, the fluoride layer is a magnesium fluoride layer or an aluminum fluoride layer.
In this embodiment, the fluoride layer is a transparent fluoride layer, including but not limited to a magnesium fluoride layer or an aluminum fluoride layer, and may also be another transparent fluoride layer.
Further, based on the above embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic flow chart of a manufacturing method of another LED chip according to an embodiment of the present invention.
The manufacturing method further comprises the following steps:
s107: as shown in fig. 10, the oxide layer or the fluoride layer 81 is subjected to a hole-digging process 101.
S108: as shown in fig. 11, a P-type ohmic contact layer 111 is formed, and the P-type ohmic contact layer 111 is connected to the epitaxial layer 31 through the oxide layer or the fluoride layer 81.
In this embodiment, the P-type ohmic contact layer 111 is in contact with the P-type semiconductor layer 313 in the epitaxial layer 31.
Further, based on the above embodiment of the present invention, referring to fig. 12, fig. 12 is a schematic flow chart of a manufacturing method of another LED chip according to an embodiment of the present invention.
Before the substrate transfer, the manufacturing method further comprises:
a metal barrier layer 131 and a bonding layer 141 are sequentially formed on the side of the gold metal layer 42 facing away from the first substrate 21.
The method comprises the following specific steps:
s109: as shown in fig. 13, a metal barrier layer 131 is formed on the side of the gold metal layer 42 facing away from the first substrate 21.
S110: as shown in fig. 14, a bonding layer 141 is formed on a side of the metal barrier layer 131 facing away from the first substrate 21.
In this embodiment, the materials and thicknesses of the metal barrier layer 131 and the bonding layer 141 are not limited, and may be determined according to actual process requirements.
Further, based on the above embodiment of the present invention, referring to fig. 15, fig. 15 is a schematic flow chart of a manufacturing method of another LED chip according to an embodiment of the present invention.
Step S105 performs substrate transfer, including:
s111: as shown in fig. 16, a second substrate 161 is provided.
S112: as shown in fig. 17, the second substrate 161 and the bonding layer 141 are subjected to a bonding process.
S113: as shown in fig. 18, the first substrate 21 is removed.
In this embodiment, a flip-chip LED chip structure is formed by performing a substrate transfer technique, so that the light-emitting surface of the LED chip structure is changed into front light-emitting, and the problem of light absorption of the GaAs substrate (first substrate) is solved, thereby greatly improving the light-emitting efficiency.
Further, based on the above-mentioned embodiment of the present invention, the second substrate 161 includes but is not limited to a Si substrate, and may be a substrate made of other materials under some other production requirements, and is not limited in the embodiment of the present invention.
Further, based on the above embodiment of the present invention, referring to fig. 19, fig. 19 is a schematic flow chart of a manufacturing method of another LED chip according to an embodiment of the present invention.
Step S105 of fabricating an electrode structure, including:
s114: as shown in fig. 20, an N electrode 201 is formed on a side of the epitaxial layer 31 facing away from the second substrate 161.
S115: as shown in fig. 21, the second substrate 161 is thinned, and as shown in fig. 22, a P electrode 211 is formed on a side of the second substrate 161 away from the epitaxial layer 31.
In this embodiment, the N electrode 201 and the P electrode 211 are made of the same material, and the specific type of the material is not limited.
Further, according to the above embodiment of the present invention, the temperature of the heat treatment is 300 ℃ to 500 ℃.
In this embodiment, including but not limited to performing the heat treatment in a furnace or RTA or RTP manner, by controlling the temperature and time of the heat treatment, the uppermost layer may still be the silver metal layer after the gold-silver alloy layer is formed on the interface.
Further, based on the above embodiment of the present invention, referring to fig. 23, fig. 23 is a schematic flow chart of a manufacturing method of another LED chip according to the embodiment of the present invention.
The manufacturing method further comprises the following steps:
s116: as shown in fig. 24, a nanosecond or picosecond ultraviolet laser device is used to perform front-surface fusing and cutting along the reserved cutting streets to form individual LED chip units; as shown in fig. 25, after laser front cutting, the sidewalls of the LED chip unit reflector structure layer are all alloy layers 43.
In this embodiment, by adopting the laser front cutting mode, the temperature in a very short time within a certain range at both sides of the cutting street may reach 1000 degrees, and at this time, the gold metal layer covers the remaining silver metal layer, so that the side walls of the mirror structure layer form an alloy layer, which plays a role in protection, and can block the influence of the external environment on the silver metal layer or the gold-silver alloy layer in the mirror structure layer, thereby further improving the performance stability of the mirror structure layer.
Further, according to the above embodiment of the present invention, the thickness of the silver metal layer 41 is 500 angstroms to 1500 angstroms.
The thickness of the gold metal layer 42 is more than twice the thickness of the silver metal layer 41.
Based on all the above embodiments of the present invention, in the manufacturing method of the LED chip provided by the present invention, by setting the reflector structure layer with the composite silver/gold two-layer structure, in the subsequent heat treatment process, a gold-silver alloy layer with a preset thickness is formed on the contact surface between the silver metal layer and the metal layer, wherein the silver metal layer and the gold metal layer can achieve excellent reflection effects at different wave bands, and the light-emitting brightness of the LED chip is improved, and the formed gold-silver alloy layer can improve the overall physical and chemical stability characteristics of the reflector structure layer, so as to achieve an LED chip structure with high reflectivity and high stability. And because the gold metal layer is not good with the material connection effect of adjacent other layer, can further improve the structural stability of reflector structural layer through this silver metal layer.
The above method for manufacturing an LED chip provided by the present invention is described in detail, and the principle and the implementation of the present invention are explained by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (12)
1. A manufacturing method of an LED chip is characterized by comprising the following steps:
providing a first substrate;
forming an epitaxial layer on the first substrate;
sequentially forming a silver metal layer and a gold metal layer on one side of the epitaxial layer, which is far away from the first substrate, so as to form a reflector structure layer;
carrying out heat treatment to form an alloy layer with a preset thickness on the contact surface of the silver metal layer and the gold metal layer;
and carrying out substrate transfer and manufacturing an electrode structure.
2. The method of manufacturing of claim 1, wherein after forming an epitaxial layer on the first substrate, the method further comprises:
and forming an oxide layer or a fluoride layer on the side of the epitaxial layer, which faces away from the first substrate.
3. The method of claim 2, wherein the oxide layer is SiO2A layer or an ITO layer.
4. The method of claim 2, wherein the fluoride layer is a magnesium fluoride layer or an aluminum fluoride layer.
5. The method of manufacturing according to claim 2, further comprising:
carrying out hole digging treatment on the oxide layer or the fluoride layer;
and forming a P-type ohmic contact layer, wherein the P-type ohmic contact layer is connected with the epitaxial layer through the oxide layer or the fluoride layer.
6. The method of manufacturing of claim 1, wherein prior to performing the substrate transfer, the method of manufacturing further comprises:
and sequentially forming a metal barrier layer and a bonding layer on one side of the gold metal layer, which is far away from the first substrate.
7. The method of manufacturing of claim 6, wherein said performing a substrate transfer comprises:
providing a second substrate;
bonding the second substrate and the bonding layer;
and removing the first substrate.
8. The method of claim 7, wherein the fabricating the electrode structure comprises:
forming an N electrode on one side of the epitaxial layer, which is far away from the second substrate;
and thinning the second substrate, and forming a P electrode on one side of the second substrate, which is far away from the epitaxial layer.
9. The method of claim 1, wherein the heat treatment is at a temperature of 300 ℃ to 500 ℃.
10. The method of manufacturing of claim 1, further comprising:
cutting along the reserved cutting path in a manner of front-side fusing and cutting by adopting nanosecond or picosecond ultraviolet laser equipment to form an independent LED chip unit;
and after the laser front side is cut, the side walls of the LED chip unit reflector structure layers are all alloy layers.
11. The method of claim 1, wherein the silver metal layer has a thickness of 500-1500 angstroms.
12. The method according to claim 11, wherein the thickness of the gold metal layer is more than twice the thickness of the silver metal layer.
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| CN101950782A (en) * | 2009-07-10 | 2011-01-19 | 财团法人工业技术研究院 | Method for forming die bonding connection structure of reflective LED at low temperature |
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Application publication date: 20200925 |