CN111710487A - Piezoresistor adopting silicon rubber insulating layer and manufacturing method thereof - Google Patents

Piezoresistor adopting silicon rubber insulating layer and manufacturing method thereof Download PDF

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Publication number
CN111710487A
CN111710487A CN202010719700.1A CN202010719700A CN111710487A CN 111710487 A CN111710487 A CN 111710487A CN 202010719700 A CN202010719700 A CN 202010719700A CN 111710487 A CN111710487 A CN 111710487A
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piezoresistor
silicon rubber
insulating layer
ceramic body
layer
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CN111710487B (en
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张治成
石小龙
叶磊
詹俊鹄
章俊
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Chengdu Tieda Electronics Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/034Housing; Enclosing; Embedding; Filling the housing or enclosure the housing or enclosure being formed as coating or mould without outer sheath
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/04Arrangements of distinguishing marks, e.g. colour coding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/02Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/12Overvoltage protection resistors
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00Use of inorganic substances as compounding ingredients
    • C08K3/18Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20Oxides; Hydroxides
    • C08K3/22Oxides; Hydroxides of metals
    • C08K2003/2237Oxides; Hydroxides of metals of titanium
    • C08K2003/2241Titanium dioxide
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/02Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • C08L2205/025Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/03Polymer mixtures characterised by other features containing three or more polymers in a blend

Abstract

The invention discloses a piezoresistor adopting a silicon rubber insulating layer and a manufacturing method thereof, wherein the piezoresistor comprises a piezoresistor ceramic body and two end surface electrode pins of the piezoresistor ceramic body; the piezoresistor ceramic body and the pins are coated to form a soft silicon rubber layer with insulation protection; the pin penetrates out of the soft silicon rubber layer to be connected with external equipment. The manufacturing method is also disclosed, firstly, the two pins are respectively arranged on the two end surfaces of the piezoresistor porcelain body; and then soaking the piezoresistor ceramic body connected with the pins in the liquid raw material of the soft silicone rubber layer, dipping for 1-3 times, taking out, curing at normal temperature, testing the performance after curing, and obtaining a finished product after the product is qualified. Compared with the prior silicon rubber technology, the special formula solves the binding force of the pressure-sensitive ceramic and the silicon rubber, and improves the performance of the product for resisting high-density lightning wave surge large current impact, especially high-density lightning wave surge large current impact at high temperature.

Description

Piezoresistor adopting silicon rubber insulating layer and manufacturing method thereof
Technical Field
The invention belongs to the technical field of insulating or dielectric materials, and particularly relates to a piezoresistor adopting a silicon rubber insulating layer and a manufacturing method thereof.
Background
The piezoresistor is a resistor device with nonlinear volt-ampere characteristics, and is mainly used as a safety device for absorbing line surge in a circuit for protection. The diode effect is mainly formed by a ceramic block which is arranged in the diode and comprises zinc oxide particles and a small amount of other metal oxides or polymers at intervals, reverse breakdown is generated due to hot electrons and a tunnel effect when high voltage is met, large current flows, and the main index is judged by the regulated lightning wave surge current.
The ceramic block structure is usually coated and attached by a layer of insulating material, so that the insulating protection of the internal material is formed, and the arc discharge from the edge of the ceramic body due to surge is prevented. The existing packaging technology mainly adopts epoxy resin powder to wrap. The epoxy resin wrapped piezoresistor has the characteristics of high strength, excellent insulating property, better wear resistance, good appearance consistency and the like. Dry powder dip-coating curing is adopted in the production and processing aspects, the process is mature, and the method is a mainstream production process of the voltage dependent resistor plug-in product. The maximum working temperature of the product is 85 ℃, and the highest level of high and low temperature resistant circulation (-40 to +85 ℃) reaches about 500 circulation. In order to improve the high-temperature and high-temperature cyclic impact resistance of the product, the product is wrapped by silicone resin or a combination of several materials. The application of new materials is not ideal, and the silicone resin can solve the problem that the product can resist the high temperature of 125 ℃. But the material has lower strength, poorer moisture resistance and poor abrasion resistance of the product. And multiple materials are combined for use, but the requirements of high-energy density lightning wave surge current impact resistance test at high temperature of the product, 1000 times of impact resistance of high-temperature and low-temperature circulation, excellent moisture resistance of the product, controllable appearance and the like cannot be met simultaneously.
Disclosure of Invention
In order to solve the problems that the existing insulating layer material has poor high and low temperature impact resistance effect and is easy to expand, crack and fall off when high-energy-density lightning wave surge current impacts at high temperature so as to influence the insulating property, the invention provides the piezoresistor adopting the silicon rubber insulating layer and the manufacturing method thereof, and the piezoresistor has the characteristics of higher elasticity and higher adhesive force, has better impact resistance after the material is modified, has better tensile strength and is not easy to crack and fall off.
The technical scheme adopted by the invention is as follows:
a piezoresistor adopting a silicon rubber insulating layer comprises a piezoresistor ceramic body and pins led out from two end faces of the piezoresistor ceramic body;
the piezoresistor ceramic body and the pins are coated to form a soft silicon rubber layer with insulation protection;
the pin penetrates out of the soft silicon rubber layer to be connected with external equipment.
Furthermore, the soft silicone rubber layer is a structural layer formed after solidification in a dip coating mode when the soft silicone rubber layer is in a liquid state after raw material treatment (through kneading, grinding and stirring).
Furthermore, the soft silicone rubber layer is a structural layer formed by solidifying raw materials in a dip-coating mode at normal temperature.
Furthermore, the preparation material of the soft silicone rubber layer comprises 20-30% of raw silicone rubber, 40-60% of auxiliary agent, 10-17% of reinforcing resin material, 10-15% of thixotropic agent and 3-5% of curing agent in percentage by mass.
The material of the invention is different from the prior art in that a reinforced resin material is adopted as a cross-linking agent, so that the high-temperature stability and the excellent weather resistance of the whole modified silicon rubber material can be further improved.
The silicon rubber material in the invention forms an insulating layer structure outside the piezoresistor ceramic body, so that the piezoresistor ceramic body is required to have better insulating property, and the piezoresistor ceramic body can be well attached to avoid the falling or arc splitting. Through the adjustment of the components and the proportion, the lightning wave surge current surge testing device can pass the lightning wave surge current surge test of the piezoresistor, and has better flexibility compared with the existing resin material.
The existing coating material usually adopts an epoxy resin structure, the working temperature or the specification requirement in the field is-40 to +85 ℃, and the coating material can resist the impact of high-energy-density lightning wave current under the normal temperature condition. However, the epoxy resin has poor flexibility, and has good insulating property, but the temperature range of the epoxy resin can not meet the specific requirements of the market.
Although the silicon rubber material adopted by the invention has better ductility, the research based on the existing material finds that the common silicon rubber material in the market can not meet the basic requirements of the piezoresistor when being directly applied to the piezoresistor. The basic performance of the raw silicone rubber is improved by adding the auxiliary agent and the reinforcing resin material, for example, the reinforcing resin material is added with a substance serving as a cross-linking agent, so that the original raw silicone rubber has better tensile strain resistance and tear strength.
Further, the raw silicone rubber is phenyl silicone rubber.
Further, the auxiliary agent comprises a structure control agent and a flame retardant which are equal in mass, and the combustion improver comprises a nitrogen flame retardant and a phosphorus flame retardant which are equal in mass.
The structure control agent refers to an agent for controlling the structure, and can control the structure. The structurization is the phenomenon that during the processing and storage of a special filling material in a filling silicon rubber system, the sizing material is hardened, the plasticity is reduced, and the remixing and the processing technological properties are gradually lost due to the physical and chemical adsorption of surface active hydroxyl groups of the filling material on silicon rubber molecules. The added structure control agent avoids the irreversible curing effect of the silicon rubber system, thereby influencing the subsequent dip-coating and curing process and improving the flame retardance and the bonding property of the material.
Further, the reinforcing resin material comprises, by mass, 40-80% of hexamethyldisiloxane, 20-50% of ethyl orthosilicate and 20-40% of ethyl polysilicate.
In the homogeneous phase, the reaction of tetraethoxysilane is carried out in two steps, which is more conducive to hydrolysis under acidic conditions and more conducive to condensation between Si and OH under alkaline conditions, i.e., the monomer preferentially reacts with the polymer having a higher degree of polymerization under alkaline conditions. Hexamethyldisiloxane (hexamethyldisiloxane) has high activity under acidic conditions and is difficult to decompose into (CH) under alkaline conditions3)3Si-OH. Therefore, the hydrolysis reaction of ethyl orthosilicate, hexamethyldisiloxane and the like can be promoted by acid catalysis, and the hydroxyl groups on the surface can be reduced by base-catalyzed polycondensation. Because the reinforcing performance of the reinforced resin material is influenced by the number of the hydroxyl groups on the surface of the reinforced resin material, the silicon rubber material reinforced by reducing the hydroxyl groups on the surface has better mechanical property and the current impact resistance of the material is enhanced.
Furthermore, the auxiliary agent also comprises specific photosensitive color powder which is convenient for laser marking of a finished product, and partial information of the piezoresistor is marked on any side of the soft silicone rubber layer through laser.
The main function of the specific photosensitive color powder is to absorb laser energy, convert the laser beam into heat energy, and generate heating action, carbonization action, evaporation action and other chemical reactions on the silicon rubber. For silicone rubbers of different chemical properties, the light-colored laser marking on a dark background and the dark-colored laser marking on a light background are of different varieties.
Because the application scene of the existing silicon rubber does not require the laser marking capability, too much technical inspiration is not provided, and in practice, the situation that the marking directly on the existing silicon rubber material cannot form a stable marking image is found. Because of the light and thin characteristics of the silicon rubber material on the piezoresistor, the laser marking difficulty is higher, the stable marking effect cannot be realized by improving the laser irradiation power, and the laser emission power also needs to be adjusted due to the thin characteristic, so that the original insulating property of the piezoresistor is prevented from being influenced by direct marking.
And by adding the specific photosensitive color powder, more heat can be generated under the same irradiation condition, so that the surrounding silicon rubber material can have enough heat to react to generate dark substances such as carbon black and the like, thereby having better display stability.
Further, the preparation material of the soft silicone rubber layer comprises, by mass, 5-8% of hexamethyldisiloxane, 3-5% of ethyl orthosilicate, 2-4% of polyethyl silicate, 20-30% of phenyl silica gel, 20-30% of hydroxy silicone oil, 10-15% of nitrogen-based flame retardant, 10-15% of phosphorus-based flame retardant, 10-15% of thixotropic agent and 3-5% of curing agent, so as to facilitate the material dip-coating process.
A manufacturing method is used for manufacturing the piezoresistor adopting the silicon rubber insulating layer, and comprises the following specific steps:
firstly, respectively arranging two pins on two end faces of a piezoresistor ceramic body, and extending the pins out of the piezoresistor ceramic body;
and then soaking the piezoresistor ceramic body connected with the pins in the liquid raw material of the soft silicone rubber layer, dipping for 1-3 times, taking out, curing at normal temperature, testing the performance after curing, and obtaining a finished product after the product is qualified.
The invention has the beneficial effects that:
(1) the invention is applied to the piezoresistor to improve the high and low temperature cycle impact resistance of the product, compared with the prior art, the invention can improve the current index of 500 cycles at-40-85 ℃ to more than 1000 cycles at-40-125 ℃, can resist high and low temperature impact in a larger range, and has longer service life;
(2) the invention is applied to the piezoresistor, and the maximum working temperature of the product is increased to 125 ℃ by improving the heating ductility and the tolerance temperature increase of the existing insulating layer material;
(3) the invention adopts a special normal temperature vulcanization and curing silicone rubber formula, so that vulcanization and curing can be carried out at normal temperature, the manufacturing process is simplified, and the production cost is reduced; and simultaneously avoids dust pollution when the epoxy powder is encapsulated.
(4) Compared with the prior silicon rubber technology, the invention has the advantages that the special formula solves the adhesive force between the pressure-sensitive ceramic and the silicon rubber, improves the high-current impact resistance of the product, especially the high-energy-density lightning wave high-current impact resistance at high temperature;
(5) compared with the situation that the existing silicon rubber material cannot be subjected to laser marking, the special material is added, so that the information mark can be marked on the surface through the laser, and the corresponding information can be clearly displayed for a long time.
Detailed Description
Example 1:
the embodiment specifically discloses a formula of insulating silicon rubber, which is an insulating material specially used for a piezoresistor.
Because piezoresistor's constitution mainly is pressure sensitive porcelain body chip, pin and packaging layer, and the main effect of packaging layer wherein is isolated with external environment, avoids pollutants such as moisture, dust particle to pollute the chip, and the packaging layer has very high insulating ability and adhesive force simultaneously, can avoid appearing drawing the arc when the voltage is too high and flashover etc. causes serious damage phenomenon to the porcelain body chip and appear.
The packaging layer in the prior art is a packaging structure made of multiple materials, because the effect of the packaging layer is particularly important, particularly, when high and low temperature cyclic impact is caused, stress caused by different thermal expansion coefficients of various materials can directly act on the packaging layer, if the physical performance of the packaging layer is poorer, phenomena such as cracking and the like can occur, so that the protection capability of the packaging layer is improved, the product fails, and even if the physical performance of the packaging layer can bear the impact of the stress, the piezoelectric effect between the chip and the packaging layer can also occur to influence the product performance.
In order to solve the problems that the existing resin packaging material has poor high and low temperature impact resistance and the working temperature range is not suitable for the condition requirements of partial scenes, according to the technical means mastered by the technical personnel in the field, a certain research data can be thought and already exists to adopt a new material to improve the problem, wherein the silicon rubber is a replacement material with obvious advantages.
The flexible silicon rubber material is adopted as the wrapping material, due to the characteristics of unique toughness, temperature resistance and high insulativity, the maximum continuous working temperature of the packaged product can be increased to 125 ℃, the resistance to high and low temperature cyclic impact (40-125 ℃) can be up to more than 1000 times, the performance is greatly improved compared with the prior art, meanwhile, in the production process, the material can be dip-coated at normal temperature, the solidification can also be carried out at normal temperature, the energy consumption can be greatly reduced, the production space can be saved, the equipment consumption can be reduced, and the production cost can be reduced.
But the defects that the existing silicon rubber material formula still easily has the problem of poor adhesion with the inner piezoresistor ceramic body after being directly dip-coated and cured, and because the adhesion force of the material is not strong, particularly, the ceramic body and the wrapping material fall off when high-density lightning surge current impacts, the electrodes at two ends of the piezoresistor are directly arc-discharged, the product breaks down, the performance index of the product for resisting the large current impact of lightning wave surge is reduced, and the service life of the product is shortened. The piezoresistor has the main technical index of tolerating the surge current impact of the large energy density lightning waves, and the silica gel is easy to fall off in the high-energy density lightning wave surge current impact test at a high temperature of 125 ℃, so that the performance index of the product is influenced.
According to the embodiment, the formula of the silicone rubber is adjusted, so that the adhesive force characteristic meeting the use requirement of the piezoresistor can be achieved after the silicone rubber is dip-coated and cured at normal temperature, and the characteristics of good ductility and insulativity of the original silicone rubber are retained, so that the effect of replacing the existing resin insulating layer can be achieved.
Specifically, the formula comprises the following components in parts by mass:
silicone rubber crude rubber, 30%
Auxiliary agent 40%
Reinforcing resin material (15%)
10% of thixotropic agent
Curing agent (5)%
To form the insulation layer of the piezoresistor, the raw silicon rubber is kneaded and heated, and then the auxiliary agent and the reinforcing resin material are added to form a liquid silicon rubber raw material with higher fluidity at normal temperature. And after a curing agent and a thixotropic agent are added, the piezoresistor ceramic body with the pins is immersed in the liquid silicon rubber raw material for 1-3 times to form a uniform coating layer, and then the coating layer is cured at normal temperature to form a stable insulating layer material.
Compared with the prior art, the material has good flexibility and adhesive force after forming a stable insulating layer, can normally work at-40-125 ℃, can resist high and low temperature impact for more than 1000 times, and greatly prolongs the service life. Meanwhile, compared with the prior art, the manufacturing process is simpler and more convenient, and the energy consumption can be reduced by dip coating and curing at normal temperature, so that the manufacturing cost is reduced.
It should be noted that some of the components in this embodiment include a variety of alternative materials, such as silicone rubber stock including but not limited to methyl silicone rubber (MQ), methyl vinyl silicone rubber (VMQ), methyl vinyl phenyl silicone rubber (PVMQ), silicone rubber, fluorosilicone rubber. The embodiment is mainly used for verifying that the nitrile silicon rubber formed by adopting the proportion and the material type has better technical effect compared with the prior resin material.
Different technical indexes can be obtained by replacing different materials in each component, a better technical effect can be achieved by matching different materials, but the problems of unclear or overlarge limited range can be avoided by limiting the components at least according to the proportion and the components with the same function.
Example 2:
the embodiment provides a piezoresistor, which comprises a cylindrical piezoresistor ceramic body and pins arranged on the circular surfaces at two ends of the piezoresistor ceramic body, wherein the piezoresistor ceramic body is externally wrapped with a soft silicon rubber layer for sealing and insulation.
The soft silicone rubber layer is adjusted by a special formula, so that the soft silicone rubber layer has a good high and low temperature impact resistance effect, and the specific formula is as follows:
hexamethyldisiloxane 5%
Ethyl orthosilicate, 3%
Ethyl polysilicate (2).)
Phenyl silica gel, 25%
30% of hydroxyl silicone oil
The nitrogen-based flame retardant (10%)
10% of phosphorus-based flame retardant
10% of thixotropic agent
Curing agent (5)%
The preparation method comprises the following steps of kneading hexamethyldisiloxane, tetraethoxysilane and polyethyl silicate which form a reinforcing resin material to obtain a resin product, and then mixing the reinforcing resin material with heated phenyl silica gel, hydroxy silicone oil, a nitrogen flame retardant and a phosphorus flame retardant to obtain matrix silica gel. And then grinding the substrate silica gel, and adding a curing agent and a thixotropic agent into the ground substrate silica gel, wherein the curing agent adopts dibutyltin dilaurate, and the thixotropic agent adopts meteorological silica or kaolin to carry out vacuum continuous stirring, so that the whole silicone rubber is maintained in a fluid state within a certain time. The piezoresistor ceramic body with pins is immersed in the silicon rubber for 3 times, taken out after the piezoresistor ceramic body forms a homogeneous coating layer, and solidified at normal temperature to form a so-called soft silicon rubber layer.
The formula in the embodiment has better bonding strength compared with the existing flexible wrapping material by adjustment, the bonding force between the formula and the piezoresistor ceramic body is obviously stronger than that in the prior art, and experimental tests show that the tensile strength between the piezoresistor ceramic body and the soft silicone rubber layer is not lower than 0.5N/mm2And the test requirement of the piezoresistor is met.
Example 3:
the embodiment provides a piezoresistor, which comprises a cylindrical piezoresistor ceramic body and pins arranged on the circular surfaces at two ends of the piezoresistor ceramic body, wherein the piezoresistor ceramic body is externally wrapped with a soft silicon rubber layer for sealing and insulation.
The soft silicone rubber layer is adjusted by a special formula, so that the soft silicone rubber layer has a good high and low temperature impact resistance effect, and the specific formula is as follows:
hexamethyldisiloxane 5%
Ethyl orthosilicate, 3%
Ethyl polysilicate (2).)
Phenyl silica gel, 25%
30% of hydroxyl silicone oil
The nitrogen-containing flame retardant (10)%
10% of phosphorus-based flame retardant
10% of thixotropic agent
Curing agent (3)%
The photosensitive color powder (titanium dioxide. cndot. 2-cndot.)
The preparation method comprises the following steps of kneading hexamethyldisiloxane, tetraethoxysilane and polyethyl silicate which form a reinforcing resin material to obtain a resin product, and then mixing the reinforcing resin material with heated phenyl silica gel, hydroxy silicone oil, a nitrogen flame retardant and a phosphorus flame retardant to obtain matrix silica gel. And then grinding the substrate silica gel, and adding a curing agent, a thixotropic agent and specific photosensitive color powder into the ground substrate silica gel, wherein the curing agent adopts dibutyltin dilaurate, and the thixotropic agent adopts meteorological silica or kaolin to carry out vacuum continuous stirring, so that the whole silicone rubber is maintained in a fluid state within a certain time. The piezoresistor ceramic body with pins is immersed in the silicon rubber for 3 times, taken out after the piezoresistor ceramic body forms a homogeneous coating layer, and solidified at normal temperature to form a so-called soft silicon rubber layer.
Compared with the formula in the example 2, the marking on the surface of the soft silicone rubber layer can be facilitated by adding the specific photosensitive color powder.
In order to verify the technical effects of the two formulas, a plurality of performance tests including a rapid temperature change impact test, a high-temperature storage test, a high-density lightning wave surge impact test at a high temperature of 125 ℃, a current impact stability test, a flame retardance test, a mechanical performance test and a laser marking test are performed. Wherein, a plurality of comparison groups are arranged, which are specifically as follows:
comparative group 1: the specific structure of the varistor is the same as that in example 3, wherein the soft silicone rubber layer is made of 5% hexamethyldisiloxane, 3% ethyl orthosilicate, 2% polyethyl silicate, 25% phenyl silica gel, 30% hydroxy silicone oil, 15% nitrogen flame retardant, 15% phosphorus flame retardant and 5% curing agent.
Comparative group 2: the specific structure of the varistor is the same as that in embodiment 3, wherein the soft silicone rubber layer is prepared from 35% of phenyl silicone, 30% of hydroxy silicone oil, 10% of nitrogen flame retardant, 10% of phosphorus flame retardant, 10% of thixotropic agent and 5% of curing agent.
Comparative group 3: the specific structure of a varistor is the same as that in example 3, wherein the soft silicone rubber layer is made of 5% hexamethyldisiloxane, 3% ethyl orthosilicate, 2% polyethyl silicate, 45% phenyl silicone, 10% hydroxy silicone, 10% nitrogen flame retardant, 10% phosphorus flame retardant, 10% thixotropic agent and 5% curing agent.
Control group 1: the piezoresistor with the same size is made of epoxy resin material as the external insulating layer
Control group 2: the piezoresistor with the same size is made of silicon rubber material
And each experimental group selects the piezoresistor 20DAC420 with the same specification and model to carry out comparison test.
The specific test results are as follows:
Figure BDA0002599513540000111
it can be seen that the formulations of examples 1-3 of the present invention have better impact resistance to rapid temperature changes than the control of the prior art materials, and even if some components are removed or some proportions are changed, the impact resistance to rapid temperature changes is still better than the prior art. In the high temperature resistance test, the examples 1 to 3 all have better test passing rate, and can be used in more severe environment due to the change of materials. The curing effect of the material is poor due to the lack of specific components in the comparison group, so that the material is damaged in a high-temperature environment, and the existing common epoxy resin cannot resist high temperature, so that the material is damaged at the temperature of approximately 85 ℃.
The current surge stability is a routine test item in the field, and the materials of examples 1-3 all meet this test criteria, whereas the control group lacking a portion of the components fails.
The manufacturability refers to the complexity of the manufacturing process of the material, and as the formula in the embodiment 3 is the optimal component and proportion, the manufacturing and dip-coating are only needed at normal temperature, the manufacturing process is simpler, and the cost is lower.
The flame retardance is related to the added flame retardant, the mechanical property is mainly positively related to the curing process of the material, and the laser marking can show clear marking information only by the silicon rubber material of the embodiment 3 added with the specific photosensitive color powder.
The present invention is not limited to the above-described alternative embodiments, and various other forms of products can be obtained by anyone in light of the present invention. The above detailed description should not be taken as limiting the scope of the invention, which is defined in the claims, and which the description is intended to be interpreted accordingly.

Claims (10)

1. A piezoresistor adopting a silicon rubber insulating layer is characterized in that: the piezoresistor ceramic comprises a piezoresistor ceramic body and pins of electrodes on two end faces of the piezoresistor ceramic body;
the piezoresistor ceramic body and the pins are coated to form a soft silicon rubber layer with insulation protection;
the pin penetrates out of the soft silicon rubber layer to be connected with external equipment.
2. The piezoresistor using the silicon rubber insulating layer as claimed in claim 1, wherein: the soft silicone rubber layer is a structural layer formed after solidification in a dip-coating mode when the raw materials are processed to form a liquid state.
3. The piezoresistor using the silicon rubber insulating layer as claimed in claim 1, wherein: the soft silicone rubber layer is a structural layer formed by solidifying raw materials in a dip-coating mode at normal temperature.
4. The piezoresistor using the silicon rubber insulating layer as claimed in claim 2, wherein: the preparation material of the soft silicone rubber layer comprises 20-30% of raw silicone rubber, 40-60% of auxiliary agent, 10-17% of reinforcing resin material, 10-15% of thixotropic agent and 3-5% of curing agent in percentage by mass.
5. The piezoresistor using the silicon rubber insulating layer as claimed in claim 4, wherein: the raw silicone rubber is phenyl silicone rubber.
6. The piezoresistor using the silicon rubber insulating layer as claimed in claim 4, wherein: the auxiliary agent comprises a structure control agent and a flame retardant which are equal in mass, and the combustion improver comprises a nitrogen flame retardant and a phosphorus flame retardant which are equal in mass.
7. The piezoresistor using the silicon rubber insulating layer as claimed in claim 4, wherein: the reinforcing resin material comprises, by mass, 40-80% of hexamethyldisiloxane, 20-50% of tetraethoxysilane and 20-40% of polyethyl silicate.
8. The piezoresistor using the silicon rubber insulating layer as claimed in claim 4, wherein: the auxiliary agent also comprises photosensitive color powder which is convenient for laser marking of finished products, and partial information of the piezoresistor is marked on any side of the soft silicone rubber layer through laser.
9. The piezoresistor using the silicon rubber insulating layer as claimed in claim 1, wherein: the preparation material of the soft silicone rubber layer comprises, by mass, 5-8% of hexamethyldisiloxane, 3-5% of ethyl orthosilicate, 2-4% of ethyl polysilicate, 20-30% of phenyl silica gel, 20-30% of hydroxy silicone oil, 10-15% of nitrogen flame retardant, 10-15% of phosphorus flame retardant, 10-15% of thixotropic agent and 3-5% of curing agent.
10. A method of making, comprising: the piezoresistor using the silicone rubber insulating layer for manufacturing the above claims 3-9 is as follows:
firstly, respectively arranging two pins on two end faces of a piezoresistor ceramic body, and extending the pins out of the piezoresistor ceramic body;
and then soaking the piezoresistor ceramic body connected with the pins in the liquid raw material of the soft silicone rubber layer, dipping for 1-3 times, taking out, curing at normal temperature, testing the performance after curing, and obtaining a finished product after the product is qualified.
CN202010719700.1A 2020-07-23 2020-07-23 Piezoresistor adopting silicon rubber insulating layer and manufacturing method thereof Active CN111710487B (en)

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CN102664082A (en) * 2012-05-17 2012-09-12 成都铁达电子有限责任公司 Force-sensitive resistor and manufacturing method
CN205354785U (en) * 2015-11-11 2016-06-29 汕头市鸿志电子有限公司 Incombustible piezo -resistor
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JP2000044804A (en) * 1998-08-03 2000-02-15 Ge Toshiba Silicones Co Ltd Electrically insulating silicone rubber composition and silicone rubber insulator
CN102634295A (en) * 2012-04-19 2012-08-15 长春中科应化特种材料有限公司 Insulation high-temperature-resistant pressure-sensitive adhesive tap and preparation method thereof
CN102664082A (en) * 2012-05-17 2012-09-12 成都铁达电子有限责任公司 Force-sensitive resistor and manufacturing method
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CN112679958A (en) * 2020-12-18 2021-04-20 厦门赛尔特电子有限公司 Silicon rubber and preparation method thereof, and piezoresistor and preparation method thereof

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