CN111708457A - Self-capacitance data processing method and device - Google Patents
Self-capacitance data processing method and device Download PDFInfo
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/04166—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving
- G06F3/041662—Details of scanning methods, e.g. sampling time, grouping of sub areas or time sharing with display driving using alternate mutual and self-capacitive scanning
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
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Abstract
The application provides a method and a device for processing self-capacitance data, comprising the following steps: acquiring self-capacitance capacity value variation and mutual-capacitance capacity value variation corresponding to each direction electrode; normalizing the self-capacitance capacity value variation quantity corresponding to the directional electrode according to the mutual capacitance capacity value variation quantity corresponding to the directional electrode aiming at the self-capacitance capacity value variation quantity corresponding to each directional electrode to obtain a normalization result corresponding to each self-capacitance capacity value variation quantity; and positioning the contact points by using the normalized result within the specified range. The influence of the capacitance value variation of the self-capacitance caused by temperature change on the positioning of the contact is eliminated.
Description
Technical Field
The present disclosure relates to the field of display technologies, and in particular, to a method and an apparatus for processing self-capacitance data, a touch chip, and a computer-readable storage medium.
Background
The self-mutual integrated touch system refers to a control system of a self-capacitance and mutual capacitance simultaneous scanning type touch screen. The touch screen comprising the control system can have the advantages of a self-capacitance type touch screen and a mutual capacitance type touch screen at the same time, and not only can support ten-finger touch, but also has better waterproof performance.
And the self-capacitance scanning mode detects the transverse and longitudinal electrode arrays, respectively determines the transverse coordinate and the longitudinal coordinate according to the capacitance change before and after touch, and then combines the transverse coordinate and the longitudinal coordinate into a planar touch coordinate. The scanning data of the self-capacitance only has n transverse scanning data and m longitudinal scanning data, which respectively correspond to the touch conditions of rows and columns in the touch screen, and the total data amount is n + m (n represents the number of transverse scanning electrodes and m represents the number of longitudinal scanning electrodes), so that the data processing amount is small and the response speed is high. The mutual capacitance is the coupling capacitance between the transverse electrodes and the longitudinal electrodes, when the mutual capacitance is detected, the transverse electrodes sequentially send out excitation signals, and the longitudinal electrodes simultaneously receive signals, so that the capacitance value of the intersection point of all the transverse electrodes and the longitudinal electrodes, namely the capacitance value of the two-dimensional plane of the whole touch screen can be obtained. And calculating the coordinate of each touch point according to the two-dimensional capacitance variation data of the touch screen. Therefore, even if there are a plurality of touch points on the screen, the real coordinates of each touch point can be calculated. The scanning data quantity of mutual capacitance is n × m, and the two-dimensional space positioning accuracy is stronger.
However, since the self-capacitance is the capacitance of the electrode to the ground, the temperature variation causes the self-capacitance data to face a serious temperature drift problem, and the temperature drift of the self-capacitance data can cause interference on the positioning of the contact.
Disclosure of Invention
The embodiment of the application provides a method for processing self-capacitance data in a self-mutual integrated touch system, which is used for solving the temperature drift problem of the self-capacitance data.
In one aspect, an embodiment of the present application provides a method for processing self-capacitance data, including:
acquiring self-capacitance capacity value variation and mutual-capacitance capacity value variation corresponding to each direction electrode;
normalizing the self-capacitance capacity value variation quantity corresponding to the directional electrode according to the mutual capacitance capacity value variation quantity corresponding to the directional electrode aiming at the self-capacitance capacity value variation quantity corresponding to each directional electrode to obtain a normalization result corresponding to each self-capacitance capacity value variation quantity;
and positioning the contact points by using the normalized result within the specified range.
In an embodiment, normalizing the capacitance value variation of the self-capacitance corresponding to the directional electrode according to the capacitance value variation of the mutual capacitance corresponding to the directional electrode includes:
screening out the mutual capacitance capacity value variation larger than a first threshold value from all mutual capacitance capacity value variations corresponding to the directional electrode;
adding the screened capacitance value variation of the mutual capacitor to obtain an accumulated value of the capacitance value variation;
and normalizing the self-capacitance value variation corresponding to the direction electrode according to the known maximum value of the mutual capacitance value variation and the capacitance value variation accumulated value.
In an embodiment, the self-capacitance value variation corresponding to the directional electrode is normalized according to a known maximum value of mutual capacitance value variation and the capacitance value variation accumulated value, and the following formula is adopted:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
wherein, ScRXAdj _ n represents a normalization result, ScRx _ n represents a self-capacitance value variation, McMax represents a mutual capacitance value variation maximum, and RxMcSum represents a capacitance value variation accumulated value.
In an embodiment, before normalizing the self-capacitance value variation corresponding to the directional electrode, the method further includes:
acquiring mutual capacitance data of each detection point;
for each detection point, comparing mutual capacitance data of the detection points with reference capacitance to obtain capacitance value variation of each detection point;
and traversing the capacitance value variation of each detection point to obtain the maximum value of the capacitance value variation of the mutual capacitance.
In an embodiment, before the mutual capacitance capacity value variation greater than the first threshold is screened from all the mutual capacitance capacity value variations corresponding to the directional electrode, the method further includes:
and determining the first threshold value according to the maximum value of the change of the mutual capacitance value.
In one embodiment, before the positioning of the contact by using the normalized result within the specified range, the method further includes:
and generating the specified range according to the maximum value of the change of the mutual capacitance value.
In one embodiment, the positioning the contact point by using the normalized result within the specified range includes:
keeping the normalization result in the designated range, and setting the normalization result not in the designated range as zero;
and replacing the corresponding self-capacitance capacity value variable quantity by using the normalization result to position the contact.
An embodiment of the present application provides a processing apparatus for self-capacitance data, including:
the data acquisition module is used for acquiring self-capacitance value variation and mutual-capacitance value variation corresponding to the electrodes in each direction;
the normalization module is used for normalizing the self-capacitance capacity value variation quantity corresponding to the directional electrode according to the mutual capacitance capacity value variation quantity corresponding to the directional electrode so as to obtain a normalization result corresponding to each self-capacitance capacity value variation quantity;
and the data screening module is used for positioning the contact by utilizing the normalization result in the specified range.
An embodiment of the present application further provides a touch chip, where the touch chip includes:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the above-mentioned processing method of self-capacitance data.
The embodiment of the application also provides a computer readable storage medium, wherein the storage medium stores a computer program, and the computer program can be executed by a processor to complete the processing method of the self-capacitance data.
According to the technical scheme provided by the embodiment of the application, the self-capacitance capacity value variation amount corresponding to each direction electrode is normalized according to the mutual-capacitance capacity value variation amount corresponding to the direction electrode, so that the self-capacitance capacity value variation amount can be converted into a relative value of the relative mutual-capacitance capacity value variation amount, the relative value is in a specified range, the contact point positioning can be carried out by only utilizing the normalization result in the specified range, and the influence of the self-capacitance capacity value variation amount caused by temperature change on the contact point positioning is eliminated.
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In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required to be used in the embodiments of the present application will be briefly described below.
Fig. 1 is a schematic view of an application scenario of a method for processing self-capacitance data in a self-interaction integrated touch system according to an embodiment of the present application;
fig. 2 is a schematic flowchart illustrating a method for processing self-capacitance data in a self-interaction integrated touch system according to an embodiment of the present disclosure;
FIG. 3 is a detailed flowchart of step S220 in the corresponding embodiment of FIG. 2;
FIG. 4 is a flowchart of determining a maximum value of a change in a mutual capacitance value according to an embodiment of the present application;
fig. 5 is a block diagram of a device for processing self-capacitance data in a self-interconnected touch system according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.
Like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
Fig. 1 is a schematic view of an application scenario of a method for processing self-capacitance data in a self-interaction integrated touch system according to an embodiment of the present application. As shown in fig. 1, the application scenario includes a touch panel 110 and a touch system 120 connected to the touch panel. The connection between the touch panel 110 and the touch system 120 can be DITO (single-glass double-layer circuit), single-layer multi-point circuit, etc. The touch system 120 may include a touch chip, which may include a detection circuit 121, a processor 122 connected to the detection circuit, and a memory 123 connected to the processor.
The detection circuit 121 is used to connect the directional electrodes (the longitudinal electrode and the transverse electrode) of the touch panel 110 and collect voltage signals. The processor 122 is configured to convert the voltage signal into a capacitance value, and obtain self-capacitance data corresponding to each directional electrode and mutual capacitance data of each detection point (i.e., an intersection of the transverse electrode and the longitudinal electrode).
In an embodiment, the memory 123 is used for storing processor executable instructions, and the processor may be configured to execute a method for processing self-capacitance data in the self-integration type touch system provided in the embodiments described below.
The processor 122 may be an integrated circuit chip having signal processing capabilities. The processor may be a general-purpose processor, and includes a Central Processing Unit (CPU), a Network Processor (NP), and the like; but may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components. Which may implement or perform the methods, steps, and logic blocks disclosed in the embodiments of the present application. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The Memory 123 may be implemented by any type of volatile or non-volatile Memory device or combination thereof, such as a Static Random Access Memory (SRAM), an Electrically Erasable Programmable Read-Only Memory (EEPROM), an Erasable Programmable Read-Only Memory (EPROM), a Programmable Read-Only Memory (PROM), a Read-Only Memory (ROM), a magnetic Memory, a flash Memory, a magnetic disk, or an optical disk.
The present application further provides a computer-readable storage medium, in which a computer program is stored, and the computer program can be executed by the processor 122 to complete the processing method of the self-capacitance data in the self-mutual integrated touch system provided in the embodiments of the present application.
Fig. 2 is a schematic flow chart of a method for processing self-capacitance data according to an embodiment of the present disclosure. As shown in fig. 2, the method may include the following steps S210 to S230.
Step S210: and acquiring the self-capacitance value variation and the mutual-capacitance value variation corresponding to each direction electrode.
Wherein, the direction electrode comprises a transverse electrode and a longitudinal electrode. The transverse electrodes may not be completely orthogonal to the longitudinal electrodes. When the self-capacitance scanning mode is adopted, each direction electrode corresponds to one self-capacitance value variable quantity. Assuming that there are m transverse electrodes and n longitudinal electrodes, there are m + n self-capacitance value variations, where m represents the total number of transverse electrodes and n represents the total number of longitudinal electrodes. The self-capacitance value variation is the variation between capacitance detected by a certain direction electrode and fixed capacitance when a finger touches the touch panel. Fixed capacitance refers to the value of the capacitance detected without a touch.
The mutual capacitance scanning method may share the electrodes of the self capacitance scanning method, thereby performing the mutual capacitance scanning and the self capacitance scanning in time division. The transverse electrodes and the longitudinal electrodes in the mutual capacitance scanning mode can also be independently arranged, and if the transverse electrodes and the longitudinal electrodes are independently arranged, self capacitance scanning and mutual capacitance scanning can be simultaneously carried out. In mutual capacitance scanning, the intersections of the transverse electrodes and the longitudinal electrodes form coupling capacitors, so that m transverse electrodes and n longitudinal electrodes can have coupling capacitors of m × n intersections (i.e., detection points), that is, mutual capacitors. If m transverse electrodes and n longitudinal electrodes are provided, the mutual capacitance capacity value variation is m × n, and each detection point corresponds to one mutual capacitance capacity value variation. The mutual capacitance value variation refers to the variation between the currently detected coupling capacitance and the reference capacitance. The reference capacitance can be considered as a coupling capacitance when no touch is caused.
For example, assume that there are m longitudinal electrodesR1、R2… … Rm and n transverse electrodes T1、T2… … Tn, for any vertical electrode Rx, there can be one self capacitance variation corresponding to the vertical electrode Rx and n mutual capacitance variations of n detection points on the vertical electrode Rx. The n detection points are the intersection points of the longitudinal electrode Rx and all the transverse electrodes.
Step S220: and normalizing the self-capacitance capacity value variable quantity corresponding to the directional electrode according to the mutual capacitance capacity value variable quantity corresponding to the directional electrode aiming at the self-capacitance capacity value variable quantity corresponding to each directional electrode to obtain a normalization result corresponding to each self-capacitance capacity value variable quantity.
Because mutual capacitance data is influenced by temperature to a small extent, the self-capacitance value variation can be normalized based on the mutual capacitance value variation, and influence caused by temperature drift is reduced.
The capacitance variation of the mutual capacitance corresponding to the directional electrode is the capacitance variation of the mutual capacitance formed by crossing the directional electrode. For example, assume that there are m longitudinal electrodes R1、R2… … Rm and n transverse electrodes T1、T2… … Tn, for passing through the longitudinal electrode R1Detecting the capacitance value variation C of the self-capacitanceR1Can be based on longitudinal electrodes R1And n transverse electrodes T1、T2… … Tn cross point n mutual capacitance value variation (C)R1T1、CR1T2、CR1T3……CR1Tn) To the capacitance variation C of self-capacitanceR1And (6) carrying out normalization. By analogy, for the self-capacitance value variation corresponding to each direction electrode, the self-capacitance value variation can be normalized according to the capacitance value variation of the mutual capacitance formed by crossing the direction electrodes.
The normalization result is a result obtained by normalizing the capacitance value variation of the self-capacitance. In an embodiment, the self-capacitance value variation of a certain direction electrode can be normalized by: calculating SUM SUM of capacitance value variation of mutual capacitance formed by crossing the directional electrodes; and then calculating the relative value of the sum of the self-capacitance value variation and the capacitance value variation. The self-capacitance capacity value variation can be expressed in the form of a relative value, and the relative value can be regarded as a normalization result.
Step S230: and positioning the contact points by using the normalized result within the specified range.
In one embodiment, if the normalized result (i.e., the relative value) of the variation of the self-capacitance capacity value of a certain directional electrode is within a specified range, the directional electrode may be regarded as having a contact point, and conversely, if the normalized result is not within the specified range, the directional electrode may be regarded as having no contact point. Thereby eliminating interference caused by temperature drift of self-capacitance data. Wherein the specified range may be set based on experience, and in one embodiment the specified range may be between 0.3 and 3.
In an embodiment, the normalization result within the specified range may be retained, the normalization result not within the specified range is set to 0, and the original self-capacitance value variation is replaced with the updated normalization result. I.e. by means of longitudinal electrodes R1Capacitance variation C of self-capacitanceR1Normalized result S ofR1Replacement CR1Longitudinal electrodes R2Capacitance variation C of self-capacitanceR2Normalized result S ofR2Replacement CR2And so on. Thereby eliminating the variation of the capacitance value of the self-capacitance caused by the temperature variation.
According to the technical scheme provided by the embodiment of the application, the self-capacitance capacity value variation amount corresponding to each direction electrode is normalized according to the mutual-capacitance capacity value variation amount corresponding to the direction electrode, so that the self-capacitance capacity value variation amount can be converted into a relative value of the relative mutual-capacitance capacity value variation amount, the relative value is in a specified range, the contact point positioning can be carried out by only utilizing the normalization result in the specified range, and the influence of the self-capacitance capacity value variation amount caused by temperature change on the contact point positioning is eliminated.
In an embodiment, as shown in fig. 3, the step S220 may include the following steps S221 to S223.
Step S221: and screening out the mutual capacitance capacity value variation larger than a first threshold value from all the mutual capacitance capacity value variations corresponding to the directional electrodes.
The first threshold may be set according to an empirical value of a mutual capacitance value variation when the touch is made. In another embodiment, the first threshold may be 25%, 30%, or 35% of the maximum value of the mutual capacitance variation at the time of a single finger touch. In other embodiments, the mutual capacitance value variation amount of each detection point can be traversed, a maximum value of the mutual capacitance value variation is determined, and 30% of the maximum value of the mutual capacitance value variation is used as the first threshold.
For example, the longitudinal electrode R1And n transverse electrodes T1、T2… … Tn cross point n mutual capacitance value variation can be CR1T1、CR1T2、CR1T3……CR1TnAssuming that the capacitance variation of the mutual capacitance greater than the first threshold is CR1T2、CR1T3Then C can be screened outR1T2、CR1T3. Similarly, for each direction electrode, the mutual capacitance value variation quantity which is larger than the first threshold value and corresponds to the direction electrode can be screened out.
Step S222: and summing the screened capacitance value variation of the mutual capacitor to obtain an accumulated value of the capacitance value variation.
For example, CR1T2+CR1T3The sum may be considered a tolerance change accumulation value.
Step S223: and normalizing the self-capacitance value variation corresponding to the direction electrode according to the known maximum value of the mutual capacitance value variation and the capacitance value variation accumulated value.
In one embodiment, the normalization may employ the following equation:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
wherein, ScRXAdj _ n represents a normalization result, ScRx _ n represents a self-capacitance value variation, McMax represents a mutual capacitance value variation maximum, and RxMcSum represents a capacitance value variation accumulated value.
In an embodiment, the specified range may be 0.3 to 3 times of the maximum value McMax of the capacitance value variation of the mutual capacitance, and for the normalized result ScRXAdj _ n of the capacitance value variation of the self-capacitance calculated by the above formula, it may be compared whether the normalized result ScRXAdj _ n is within the specified range, the normalized result within the specified range is retained, and the other normalized results are set to zero, so that the normalized result ScRXAdj _ n is used to replace the original capacitance value variation ScRx _ n, thereby eliminating the interference of the temperature drift of the self-capacitance.
In one embodiment, the maximum value of the change in the mutual capacitance can be a fixed known quantity. In other embodiments, as shown in fig. 4, the maximum value of the change in the mutual capacitance can be obtained through the following steps S401 to S402.
And step S401, mutual capacitance data of each detection point is acquired.
The detection point is the intersection point of the transverse electrode and the longitudinal electrode, and the intersection point forms a coupling capacitance, namely a mutual capacitance. The mutual capacitance data refers to the magnitude of the coupling capacitance of the currently detected intersection.
And S402, comparing the mutual capacitance data of the detection points with a reference capacitance to obtain the mutual capacitance value variation of each detection point.
The reference capacitance can be considered as a coupling capacitance of a detection point when no person touches the detection point. The reference capacitance at a certain detection point can be regarded as a fixed value CfThe mutual capacitance data of the detecting point can be represented by Ce, and the capacitance value variation of the detecting point can be Ce-CfThe value of (c).
And S403, traversing the mutual capacitance value variation of each detection point to obtain the maximum mutual capacitance value variation.
And comparing the mutual capacitance value variation of all the detection points to determine the maximum value of the mutual capacitance value variation, namely the maximum value of all the mutual capacitance value variation.
Another embodiment of the present application provides a method for processing self-capacitance data in a self-mutual integrated touch system, where the method includes the following steps:
step 1: and traversing the mutual capacitance data of each detection point, scanning out the point with the maximum mutual capacitance data, and recording the capacitance value variation of the point with the maximum mutual capacitance data as McMax (namely the maximum mutual capacitance value variation).
Step 2: and traversing the self-capacitance value variation detected by the n transverse electrodes and recording the self-capacitance value variation as ScRx _ n. And traversing all mutual capacitance value variable quantities corresponding to the transverse electrodes aiming at each transverse electrode, wherein the quantity of the traversed mutual capacitance data is the quantity m of the longitudinal electrodes. The change of the mutual capacitance capacity value larger than TH is recorded and added and recorded as RxMcSum. Wherein the set value of TH may be 30% of the maximum value of the mutual capacitance variation when a single finger touches the touch panel.
And step 3: the formula ScRXAdj _ n ═ ScRx _ n × McMax/RxMcSum is used. And calculating the normalization result of the self-capacitance value variation corresponding to each transverse electrode.
And 4, step 4: and reserving ScRXadj _ n data meeting the requirement that ScAdjThMin < ScRXadj _ n < ScAdjThMax, and setting the rest to be zero. The value of ScAdjThMin may be 0.3 times McMax, and the value of ScAdjThMax may be 3 times McMax.
And 5: traversing the self-capacitance value variation detected by the m longitudinal electrodes and recording the self-capacitance value variation as ScTx _ m, and traversing all mutual capacitance value variations corresponding to each longitudinal electrode. Data greater than TH are recorded and summed and recorded as TxMcSum.
Step 6: and calculating the normalized result of the self capacitance capacity value variation corresponding to each longitudinal electrode by using the formula ScTXAdj _ m ═ ScTx _ m multiplied by McMax/TxMcSum.
And 7, reserving the ScTXAdjm data meeting the requirement that ScAdjThMin < ScTXAdjm < ScAdjThMax, and setting the rest to be zero.
And 8: the finally obtained ScRXAdj and ScTXAdj are used for replacing the longitudinal self-capacitance variation and the transverse self-capacitance variation before the longitudinal self-capacitance variation and the transverse self-capacitance variation, and therefore the interference of temperature drift on a touch system can be effectively solved.
The following are embodiments of the apparatus of the present application, which can be used to execute the embodiments of the processing method based on self-capacitance data in the self-integrated touch system of the present application. For details not disclosed in the embodiments of the device of the present application, please refer to the embodiments of the method for processing self-capacitance data in the self-integration touch system of the present application.
Fig. 5 is a block diagram of a device for processing self-capacitance data in a self-interconnected touch system according to an embodiment of the present application, and as shown in fig. 5, the device may include: a data acquisition module 510, a normalization module 520, and a data screening module 530.
A data obtaining module 510, configured to obtain a self capacitance capacity value variation and a mutual capacitance capacity value variation corresponding to each direction electrode;
a normalization module 520, configured to normalize, according to the mutual capacitance value variation corresponding to the directional electrode, the self-capacitance value variation corresponding to the directional electrode with respect to the self-capacitance value variation corresponding to each directional electrode, and obtain a normalization result corresponding to each self-capacitance value variation;
and the data screening module 530 is used for positioning the contact points by using the normalized result within the specified range.
The implementation process of the functions and actions of each module in the device is specifically detailed in the implementation process of the corresponding step in the processing method of the self-capacitance data in the self-integration type touch system, and is not described herein again.
In the embodiments provided in the present application, the disclosed apparatus and method can be implemented in other ways. The apparatus embodiments described above are merely illustrative, and for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present application. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). In some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product stored in a storage medium and including instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
Claims (10)
1. A method for processing self-capacitance data, comprising:
acquiring self-capacitance capacity value variation and mutual-capacitance capacity value variation corresponding to each direction electrode;
normalizing the self-capacitance capacity value variation quantity corresponding to the directional electrode according to the mutual capacitance capacity value variation quantity corresponding to the directional electrode aiming at the self-capacitance capacity value variation quantity corresponding to each directional electrode to obtain a normalization result corresponding to each self-capacitance capacity value variation quantity;
and positioning the contact points by using the normalized result within the specified range.
2. The method of claim 1, wherein normalizing the capacitance value variation of the self-capacitance corresponding to the directional electrode according to the capacitance value variation of the mutual capacitance corresponding to the directional electrode comprises:
screening out the mutual capacitance capacity value variation larger than a first threshold value from all mutual capacitance capacity value variations corresponding to the directional electrode;
adding the screened capacitance value variation of the mutual capacitor to obtain an accumulated value of the capacitance value variation;
and normalizing the self-capacitance value variation corresponding to the direction electrode according to the known maximum value of the mutual capacitance value variation and the capacitance value variation accumulated value.
3. The method according to claim 2, wherein the self-capacitance value variation corresponding to the directional electrode is normalized according to the known maximum value of mutual capacitance value variation and the accumulated value of capacitance value variation, and the following formula is adopted:
ScRXAdj_n＝ScRx_n×McMax/RxMcSum
wherein, ScRXAdj _ n represents a normalization result, ScRx _ n represents a self-capacitance value variation, McMax represents a mutual capacitance value variation maximum, and RxMcSum represents a capacitance value variation accumulated value.
4. The method of claim 2, wherein before normalizing the variance of the self-capacitance value corresponding to the directional electrode, the method further comprises:
acquiring mutual capacitance data of each detection point;
for each detection point, comparing mutual capacitance data of the detection points with reference capacitance to obtain capacitance value variation of each detection point;
and traversing the capacitance value variation of each detection point to obtain the maximum value of the capacitance value variation of the mutual capacitance.
5. The method of claim 2, wherein before the step of screening out the mutual capacitance capacity value variation larger than the first threshold from all the mutual capacitance capacity value variations corresponding to the directional electrode, the method further comprises:
and determining the first threshold value according to the maximum value of the change of the mutual capacitance value.
6. The method of claim 2, wherein prior to the locating the contact using the normalized result within the specified range, the method further comprises:
and generating the specified range according to the maximum value of the change of the mutual capacitance value.
7. The method of claim 1, wherein the locating the contact using the normalized result within the specified range comprises:
keeping the normalization result in the designated range, and setting the normalization result not in the designated range as zero;
and replacing the corresponding self-capacitance capacity value variable quantity by using the normalization result to position the contact.
8. An apparatus for processing self-capacitance data, comprising:
the data acquisition module is used for acquiring self-capacitance value variation and mutual-capacitance value variation corresponding to the electrodes in each direction;
the normalization module is used for normalizing the self-capacitance capacity value variation quantity corresponding to the directional electrode according to the mutual capacitance capacity value variation quantity corresponding to the directional electrode so as to obtain a normalization result corresponding to each self-capacitance capacity value variation quantity;
and the data screening module is used for positioning the contact by utilizing the normalization result in the specified range.
9. A touch chip, comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to perform the method of processing self-capacitance data of any one of claims 1-7.
10. A computer-readable storage medium, characterized in that the storage medium stores a computer program executable by a processor to perform the method of processing self-capacitance data of any one of claims 1-7.
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