CN111704601A - Degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone and preparation method thereof - Google Patents

Degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone and preparation method thereof Download PDF

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Publication number
CN111704601A
CN111704601A CN202010550069.7A CN202010550069A CN111704601A CN 111704601 A CN111704601 A CN 111704601A CN 202010550069 A CN202010550069 A CN 202010550069A CN 111704601 A CN111704601 A CN 111704601A
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dihydroxycyclohexanone
resin monomer
acid
molar ratio
photoresist
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Inventor
邵严亮
傅志伟
贺宝元
潘新刚
薛富奎
汪进波
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Xuzhou B&c Chemical Co ltd
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Xuzhou B&c Chemical Co ltd
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07DHETEROCYCLIC COMPOUNDS
    • C07D317/00Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C321/00Thiols, sulfides, hydropolysulfides or polysulfides
    • C07C321/24Thiols, sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C07C321/28Sulfides, hydropolysulfides, or polysulfides having thio groups bound to carbon atoms of six-membered aromatic rings
    • C07C321/30Sulfides having the sulfur atom of at least one thio group bound to two carbon atoms of six-membered aromatic rings
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds

Abstract

The invention discloses a degradable photoresist acid-producing resin monomer synthesized by 3, 5-dihydroxycyclohexanone and a preparation method thereof, wherein the resin monomer comprises the following structural general formula
Figure DDA0002542205780000011
Wherein R is1Comprising C1~C12Alkyl, heteroalkyl, or a connecting bond, R2And R4Respectively comprise hydrogen, halogen and C1~C12Alkyl or heteroalkyl, R3Is alkyl, P1、P2And P3The photoresist containing the resin monomer has better etching resistance, improves the edge roughness of a developed pattern, improves the resolution of a photoetching pattern, and has a simple preparation method of the resin monomer.

Description

Degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone and preparation method thereof
Technical Field
The invention relates to the technical field of photoresist, in particular to a degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone and a preparation method thereof.
Background
Lithography (Lithography) refers to a fine processing technique for transferring a pattern designed on a Mask (Mask) to a pattern on a substrate by using the chemical sensitivity of a Lithography material (particularly a photoresist) under the action of visible light, ultraviolet light, an electron beam and the like through the processes of exposure, development, etching and the like.
The main components of the photoresist are resin, photoacid generator, and corresponding additives and solvents, and these materials have chemical sensitivity with light (including visible light, ultraviolet light, electron beam, etc.) and undergo a photochemical reaction to change their solubility in a developing solution. According to the difference of photochemical reaction mechanism, the photoresist is divided into a positive photoresist and a negative photoresist: after exposure, the solubility of the photoresist in a developing solution is increased, and the photoresist with the same pattern as that of the mask is obtained and is called as a positive photoresist; after exposure, the photoresist has reduced solubility or even no solubility in a developing solution, and a negative photoresist with a pattern opposite to that of the mask is obtained.
Photoacid generators are one of the key components in chemically amplified photoresists, and their structure and properties have a large influence on the image formed by the photoresist system. The acid-sensitive resin is a compound which can be decomposed to generate specific acid under the irradiation of a specific light source or radiation, the generated acid can enable the acid-sensitive resin to generate decomposition or crosslinking reaction, and the acid-sensitive resin monomer is an important component for realizing the dissolution difference of the resin in a developing solution before and after exposure.
As Integrated Circuit (IC) feature sizes have decreased, the problem of photoacid generator diffusion has become more important.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a novel degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone, and a corresponding preparation method.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention relates to a degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone, which comprises the following structural general formula:
Figure BDA0002542205770000021
wherein R is1Comprising C1~C12Alkyl, heteroalkyl, or a connecting bond, R2And R4Respectively comprise hydrogen, halogen and C1~C12Alkyl or heteroalkyl, R3Is alkyl, P1、P2And P3Respectively, include alkyl or heteroalkyl groups.
As a preferable technical means of the present invention, R is1Is a fluoroalkyl group.
As a preferred embodiment of the present invention, the resin monomer comprises the following structure:
Figure BDA0002542205770000022
the preparation method of the degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone is characterized by comprising the following steps:
reacting S1, 3, 5-dihydroxycyclohexanone I with an acrylic compound under an alkaline condition, and purifying to obtain an intermediate II;
s2, forming an intermediate III containing an acetal structure by the intermediate II and the hydroxyl-containing acrylic compound under the acid catalysis condition;
s3, carrying out esterification reaction on the intermediate III and sulfonate to form an intermediate IV;
s4, the intermediate IV reacts with halogenated sulfonium to form a resin monomer V.
As a preferable technical scheme of the invention, the molar ratio of the 3, 5-dihydroxycyclohexanone I, the acrylic compound and the alkali is 1 (0.9-1.1) to (1.5-3), the molar ratio of the intermediate II to the acrylic compound is 1: (0.9-1.2), wherein the molar ratio of the intermediate III to the sulfonate is 1: (1-1.2), wherein the molar ratio of the intermediate IV to the sulfonium halide is 1: (1-1.2).
In a preferred embodiment of the present invention, the molar ratio of the 3, 5-dihydroxycyclohexanone I to the acrylic compound to the base is 1:1:2, and the molar ratio of the intermediate II to the hydroxyl group-containing acrylic compound is 1:1, the molar ratio of the intermediate III to the sulfonate is 1:1, the molar ratio of the intermediate IV to the sulfonium halide is 1: 1.
in a preferred embodiment of the present invention, in S1, the acrylic compound includes one of acrylic anhydride, acryloyl chloride, methacrylic anhydride, and methacryloyl chloride.
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention provides a resin monomer, which contains two unsaturated carbon-carbon double bonds and can generate crosslinking in the polymerization process with other resin monomers to form a three-dimensional network structure polymer resin, and the generated crosslinked polymer resin has better etching resistance.
(2) The resin monomer is also connected with a photoacid generator, so that the diffusion of the photoacid generator from an exposed area to a non-exposed area can be reduced, the line edge roughness is improved, and the resolution is improved.
(3) The resin monomer also comprises an acetal structure, when in exposure, the photoacid generator generates acid, so that the structure of the side chain acetal of the formed resin is broken under an acidic condition, thereby breaking the polymer resin, generating a product with smaller molecular weight, reducing the line edge roughness, simultaneously increasing the solubility of the exposed resin in a developing solution by hydroxyl groups formed by breaking the polymer resin, increasing the difference of the dissolving speeds of the polymer resin before and after exposure in the developing solution, improving the contrast of the photoresist and improving the resolution of a photoetching pattern.
(4) The invention has simple synthetic route and convenient operation.
Detailed Description
The present invention will be further described with reference to specific examples, which are intended to illustrate and explain the present invention, but are not intended to limit the present invention.
Example 1
The resin monomer 1-5 prepared by taking (3R,5S) -3, 5-dihydroxycyclohexanone as a raw material has the following structure:
Figure BDA0002542205770000041
specific synthetic routes of resin monomers 1-5:
Figure BDA0002542205770000042
the specific synthesis steps are as follows:
s1, (3R,5S) -3, 5-dihydroxycyclohexanone 1-1(10g, 76.8mmol), triethylamine (15.5g, 153.2mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to tetrahydrofuran (300g), and acryloyl chloride (7g, 77.3mmol) was added dropwise with stirring at 25 ℃ to react for 5 hours. Adding water into the reaction solution for reaction, extracting with ethyl acetate, washing the extract with sodium bicarbonate aqueous solution and saturated saline solution in sequence, and concentrating an organic layer to obtain a crude product. The crude product was purified by silica gel column chromatography to give compound 1-2(9.5g, 51.6mmol, 67.1% molar yield).
S2, Compound 1-2(9.5g, 51.6mmol), 2, 3-dihydroxypropyl acrylate (7.6g, 52.0mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to benzene (150g), and heated under reflux for 5 hours. The reaction mixture was washed with water and saturated brine in this order, and then benzene was removed by distillation under reduced pressure to give a crude product, which was purified by distillation to give compound 1-3(11g, 35.2mmol, molar yield 68.3%).
S3, Compound 1-3(11g, 35.2mmol), sodium difluorosulfoacetate (7g, 35.3mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to toluene (150g), and heated under reflux for 8 hours. The reaction solution was filtered and washed with acetonitrile. The resulting acetonitrile-containing solution was concentrated, and added to methyl t-butyl ether to slurry and filtered to obtain solid compound 1-4(13.5g, 27.4mmol, molar yield 77.8%).
S4, Compounds 1 to 4(13.5g, 27.4mmol), triphenylsulfonium bromide (9.5g, 27.7mmol) and p-methoxyphenol (0.02g, 0.16mmol) were dissolved in a mixed solvent of dichloromethane (100g) and water (100 g). Stirring was carried out at 30 ℃ for 8 hours. The reaction solution was separated into an organic layer and an aqueous layer, and the organic layer was washed with deionized water, then concentrated and added to methyl t-butyl ether for recrystallization to give compound 1-5 as a solid (17g, 23.2mmol, 84.6% molar yield).
Example 2
The resin monomer 2-5 prepared by taking (3R,5S) -3, 5-dihydroxycyclohexanone as a raw material has the following structure:
Figure BDA0002542205770000061
the specific synthetic route of the resin monomers 2-5 is as follows:
Figure BDA0002542205770000062
the specific synthesis steps are as follows:
s1, (3R,5S) -3, 5-dihydroxycyclohexanone 2-1(10g, 76.8mmol), triethylamine (15.5g, 153.2mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to tetrahydrofuran (300g), and methacrylic anhydride (11.8g, 76.5mmol) was added dropwise with stirring at 25 ℃ to react for 5 hours. Adding water into the reaction solution to stop the reaction, extracting with ethyl acetate, washing the extract with sodium bicarbonate aqueous solution and saturated saline solution in sequence, and concentrating the organic layer to obtain a crude product. The crude product was purified by silica gel column to give compound 2-2(9.2g, 46.4mmol, molar yield 60.4%);
s2, Compound 2-2(9.2g, 46.4mmol), 2, 3-dihydroxypropyl acrylate (6.8g, 46.5mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to benzene (150g), and heated under reflux for 5 hours. Washing the reaction solution with water and saturated saline water in sequence, then distilling out benzene under reduced pressure to obtain a crude product, and distilling and purifying the crude product to obtain a compound 2-3(10.5g, 32.2mmol, and the molar yield is 69.3%);
s3, Compound 2-3(10.5g, 32.2mmol), sodium difluorosulfoacetate (6.4g, 32.3mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to toluene (150g), and heated under reflux for 8 hours. The reaction solution was filtered and washed with acetonitrile. Concentrating the obtained acetonitrile-containing solution, adding the concentrated acetonitrile-containing solution into methyl tert-butyl ether, pulping, and filtering to obtain solid compound 2-4(12.5g, 24.7mmol, and the molar yield is 76.7%);
s4, Compound 2-4(12.5g, 24.7mmol), tris (4-methylphenyl) sulfonium bromide (9.5g, 24.7mmol) and p-methoxyphenol (0.02g, 0.16mmol) were dissolved in a mixed solvent of dichloromethane (100g) and water (100 g). Stirring was carried out at 30 ℃ for 8 hours. The reaction solution was separated into an organic layer and an aqueous layer, and the organic layer was washed with deionized water, then concentrated and added to methyl t-butyl ether for recrystallization to give compound 2-5 as a solid (17g, 21.5mmol, 87.3% molar yield).
Example 3
The resin monomer 3-5 prepared by taking (3R,5S) -3, 5-dihydroxycyclohexanone as a raw material has the following structure:
Figure BDA0002542205770000071
the specific synthetic route of the resin monomers 3-5 is as follows:
Figure BDA0002542205770000081
the specific synthesis steps are as follows:
s1, (3R,5S) -3, 5-dihydroxycyclohexanone 1-1(10g, 76.8mmol), triethylamine (15.5g, 153.2mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to tetrahydrofuran (300g), and methacryloyl chloride (8g, 76.5mmol) was added dropwise with stirring at 25 ℃ to react for 5 hours. Adding water into the reaction solution to stop the reaction, extracting with ethyl acetate, washing the extract with sodium bicarbonate aqueous solution and saturated saline solution in sequence, and concentrating the organic layer to obtain a crude product. The crude product was purified by silica gel column to give compound 3-2(9g, 45.4mmol, 59.1% molar yield);
s2, Compound 3-2(9g, 45.4mmol), 3, 4-dihydroxybutyl acrylate (7.3g, 45.6mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to benzene (150g), and heated under reflux for 5 hours. The reaction solution is washed by water and saturated saline water in sequence, then benzene is removed by reduced pressure distillation to obtain a crude product, and the crude product is purified by distillation to obtain a compound 3-3(10.7g, 31.4mmol, molar yield 69.2%);
s3, Compound 3-3(10.7g, 31.4mmol), sodium difluorosulfoacetate (6.2g, 31.3mmol), p-toluenesulfonic acid (0.5g, 2.9mmol) and p-methoxyphenol (0.02g, 0.16mmol) were added to toluene (150g), and heated under reflux for 8 hours. The reaction solution was filtered and washed with acetonitrile. Concentrating the obtained acetonitrile-containing solution, adding the concentrated acetonitrile-containing solution into methyl tert-butyl ether, pulping, and filtering to obtain solid compound 3-4(13g, 25.0mmol, and the molar yield is 79.5%);
s4, Compound 3-4(13g, 25.0mmol), triphenylsulfonium bromide (8.5g, 24.8mmol) and p-methoxyphenol (0.02g, 0.16mmol) were dissolved in a mixed solvent of dichloromethane (100g) and water (100 g). Stirring was carried out at 30 ℃ for 8 hours. The reaction solution was separated into an organic layer and an aqueous layer, the organic layer was washed with deionized water, and then the organic layer was concentrated and added to methyl t-butyl ether to conduct recrystallization to obtain 3 to 5(17g, 22.3mmol, molar yield 89.5%) as a solid compound
Compared with the prior art, the invention has the following beneficial effects:
(1) the invention provides a resin monomer, which contains two unsaturated carbon-carbon double bonds and can generate crosslinking in the polymerization process with other resin monomers to form a three-dimensional network structure polymer resin, and the generated crosslinked polymer resin has better etching resistance.
(2) The resin monomer is also connected with a photoacid generator, so that the diffusion of the photoacid generator from an exposed area to a non-exposed area can be reduced, the line edge roughness is improved, and the resolution is improved.
(3) The resin monomer also comprises an acetal structure, when in exposure, the photoacid generator generates acid, so that the structure of the side chain acetal of the formed resin is broken under an acidic condition, thereby breaking the polymer resin, generating a product with smaller molecular weight, reducing the line edge roughness, simultaneously increasing the solubility of the exposed resin in a developing solution by hydroxyl groups formed by breaking the polymer resin, increasing the difference of the dissolving speeds of the polymer resin before and after exposure in the developing solution, improving the contrast of the photoresist and improving the resolution of a photoetching pattern.
(4) The invention has simple synthetic route and convenient operation.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that various changes, modifications and substitutions can be made without departing from the spirit and scope of the invention as defined by the appended claims. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (7)

1. A degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone is characterized by comprising the following structural general formula:
Figure FDA0002542205760000011
wherein R is1Comprising C1~C12Alkyl, heteroalkyl, or a connecting bond, R2And R4Respectively comprise hydrogen, halogen and C1~C12Alkyl or heteroalkyl, R3Is alkyl, P1、P2And P3Respectively, include alkyl or heteroalkyl groups.
2. The degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone according to claim 1, wherein R is the same as R1Is a fluoroalkyl group.
3. The degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone according to claim 2, wherein the resin monomer comprises the following structure:
Figure FDA0002542205760000012
4. a method for preparing the degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone according to any one of claims 1 to 3, which comprises the following steps:
reacting S1, 3, 5-dihydroxycyclohexanone I with an acrylic compound under an alkaline condition, and purifying to obtain an intermediate II;
s2, forming an intermediate III containing an acetal structure by the intermediate II and the hydroxyl-containing acrylic compound under the acid catalysis condition;
s3, carrying out esterification reaction on the intermediate III and sulfonate to form an intermediate IV;
s4, the intermediate IV reacts with halogenated sulfonium to form a resin monomer V.
5. The method for preparing the acid-producing resin monomer for the degradable photoresist synthesized from 3, 5-dihydroxycyclohexanone according to claim 4, wherein the molar ratio of the 3, 5-dihydroxycyclohexanone I, the acrylic compound and the alkali is 1 (0.9-1.1) to (1.5-3), and the molar ratio of the intermediate II and the hydroxyl-containing acrylic compound is 1: (0.9-1.2), wherein the molar ratio of the intermediate III to the sulfonate is 1: (1-1.2), wherein the molar ratio of the intermediate IV to the sulfonium halide is 1: (1-1.2).
6. The method for preparing the degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone according to claim 5, wherein the molar ratio of the 3, 5-dihydroxycyclohexanone I to the acrylic compound to the alkali is 1:1:2, and the molar ratio of the intermediate II to the hydroxyl-containing acrylic compound is 1:1, the molar ratio of the intermediate III to the sulfonate is 1:1, the molar ratio of the intermediate IV to the sulfonium halide is 1: 1.
7. the method for preparing the degradable acid-producing photoresist resin monomer synthesized from 3, 5-dihydroxycyclohexanone according to claim 4, wherein in S1, the acrylic compound comprises one of acrylic anhydride, acryloyl chloride, methacrylic anhydride or methacryloyl chloride.
CN202010550069.7A 2020-06-16 2020-06-16 Degradable photoresist acid-producing resin monomer synthesized from 3, 5-dihydroxycyclohexanone and preparation method thereof Pending CN111704601A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112661769A (en) * 2020-12-23 2021-04-16 上海博栋化学科技有限公司 Resin monomer synthesized from 5- (hydroxymethyl) -1, 3-cyclohexanedione and preparation method thereof
CN113416177A (en) * 2021-06-24 2021-09-21 徐州博康信息化学品有限公司 Main chain degradable photoresist resin monomer and preparation method and application thereof
CN113429377A (en) * 2021-06-23 2021-09-24 徐州博康信息化学品有限公司 Degradable resin monomer containing fluorine-free photoacid generator and preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1841200A (en) * 2005-03-30 2006-10-04 住友化学株式会社 Salt suitable for acid generator and chemical amplifying type corrosion-resistant composition containing the same
CN101955476A (en) * 2009-07-16 2011-01-26 住友化学株式会社 Salt and the photo-corrosion-resisting agent composition that contains this salt
JP2015043079A (en) * 2013-07-24 2015-03-05 Jsr株式会社 Radiation-sensitive resin composition, method for forming resist pattern, polymer, compound, and production method of compound
CN107129448A (en) * 2016-02-29 2017-09-05 罗门哈斯电子材料有限责任公司 Light acid produces monomer, includes the photo-corrosion-resisting agent composition of the polymer from its derivative polymer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1841200A (en) * 2005-03-30 2006-10-04 住友化学株式会社 Salt suitable for acid generator and chemical amplifying type corrosion-resistant composition containing the same
CN101955476A (en) * 2009-07-16 2011-01-26 住友化学株式会社 Salt and the photo-corrosion-resisting agent composition that contains this salt
JP2015043079A (en) * 2013-07-24 2015-03-05 Jsr株式会社 Radiation-sensitive resin composition, method for forming resist pattern, polymer, compound, and production method of compound
CN107129448A (en) * 2016-02-29 2017-09-05 罗门哈斯电子材料有限责任公司 Light acid produces monomer, includes the photo-corrosion-resisting agent composition of the polymer from its derivative polymer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JUNG HEE KIM等: "Antimicrobial Activity of p-Hydroxyphenyl Acrylate Derivatives", 《JOURNAL OF AGRICULTURAL AND FOOD CHEMISTRY》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112661769A (en) * 2020-12-23 2021-04-16 上海博栋化学科技有限公司 Resin monomer synthesized from 5- (hydroxymethyl) -1, 3-cyclohexanedione and preparation method thereof
CN112661769B (en) * 2020-12-23 2022-06-28 上海博栋化学科技有限公司 Resin monomer synthesized from 5- (hydroxymethyl) -1, 3-cyclohexanedione and preparation method thereof
CN113429377A (en) * 2021-06-23 2021-09-24 徐州博康信息化学品有限公司 Degradable resin monomer containing fluorine-free photoacid generator and preparation method and application thereof
CN113416177A (en) * 2021-06-24 2021-09-21 徐州博康信息化学品有限公司 Main chain degradable photoresist resin monomer and preparation method and application thereof
CN113416177B (en) * 2021-06-24 2022-10-25 徐州博康信息化学品有限公司 Main chain degradable photoresist resin monomer and preparation method and application thereof

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Application publication date: 20200925