CN111704128A - Two-dimensional material transfer method based on substrate with steps - Google Patents
Two-dimensional material transfer method based on substrate with steps Download PDFInfo
- Publication number
- CN111704128A CN111704128A CN202010458450.0A CN202010458450A CN111704128A CN 111704128 A CN111704128 A CN 111704128A CN 202010458450 A CN202010458450 A CN 202010458450A CN 111704128 A CN111704128 A CN 111704128A
- Authority
- CN
- China
- Prior art keywords
- dimensional material
- pmma
- substrate
- graphene
- pdms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/194—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
- C01B21/0648—After-treatment, e.g. grinding, purification
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
Abstract
The invention discloses a two-dimensional material transfer method based on a substrate with steps, which comprises the following steps: manufacturing a two-dimensional material layer on a substrate, spin-coating PMMA, manufacturing PDMS/PMMA/two-dimensional material/substrate, etching silicon oxide on the substrate, releasing the PDMS/PMMA/two-dimensional material, combining the two-dimensional material to be transferred with a target substrate, and dissolving PMMA. The transfer method is suitable for flattening the substrate and the substrate with steps caused by adding electrodes and the like; meanwhile, a method of direct wet etching by using a sodium hydroxide solution is adopted, so that a two-dimensional material, particularly graphene, is prevented from curling in the transfer process, the transfer success rate is improved, and the cost is reduced; the isopropanol is used for cleaning the two-dimensional material after the silicon oxide is etched instead of the deionized water, firstly, the isopropanol is volatile, and secondly, when the two-dimensional material is combined with a target substrate and PMMA is etched, the isopropanol can increase the combination force of the two-dimensional material and the substrate, so that the two-dimensional material cannot be curled and deviated.
Description
Technical Field
The invention relates to the technical field of material transfer, in particular to a two-dimensional material transfer method based on a substrate with steps.
Background
The two-dimensional material commonly used at present comprises graphene, molybdenum disulfide, tungsten disulfide, boron nitride and the like, and after the graphene is found for the first time in 2004, the research and application development of the two-dimensional material are rapid, and the two-dimensional material has wide application prospects in the fields of biological detection, microelectronics and the like. At present, the main methods for preparing the two-dimensional material comprise a mechanical stripping method, a chemical oxidation-reduction method and a gas image deposition method, wherein the mechanical stripping method is the main method for preparing a two-dimensional material sample by generally carrying out experimental research, and compared with other methods, the quality of the prepared single crystal thin-layer two-dimensional material is higher. Regardless of the fabrication method, the two-dimensional material needs to be transferred to the target substrate next to complete the subsequent experiment. However, the currently widely used wet and dry transfer methods are both to transfer two-dimensional materials onto flat substrates such as silicon nitride, silicon oxide, etc. When the substrate is not flat due to the presence of electrodes (or other steps) on the surface of the target substrate, these conventional methods may not be able to transfer to a specified location due to the reduced contact area of the two-dimensional material with the substrate.
Disclosure of Invention
The purpose of the invention is as follows: in order to overcome the defects of the background art, the invention provides a two-dimensional material transfer method based on a stepped substrate, which can transfer a two-dimensional material to a specified position of a stepped target substrate at a fixed point without damaging the target substrate.
The technical scheme is as follows: the invention discloses a two-dimensional material transfer method based on a substrate with steps, which comprises the following steps:
s1, peeling the two-dimensional material to be transferred off the silicon oxide/silicon substrate to form a two-dimensional material layer, and spin-coating PMMA on the two-dimensional material layer to form a two-dimensional material/PMMA layer;
s2, pressing the two-dimensional material/PMMA layer onto the perforated PDMS block, wherein the two-dimensional material is located in the center of the hole;
s3, placing the sample obtained in the S2 in a sodium hydroxide solution to etch silicon oxide, and releasing a two-dimensional material/PMMA/PDMS;
s4, putting the two-dimensional material/PMMA/PDMS into isopropanol solution for cleaning, and then aligning the two-dimensional material to a target position on a target substrate for compressing;
s5, the sample obtained in S4 is placed in an acetone solution to dissolve PMMA, namely, the two-dimensional material is successfully transferred to the accurate position of the target substrate.
The two-dimensional material to be transferred is graphene. Other two-dimensional materials such as molybdenum disulfide and boron nitride can also be transferred.
Further, in S1, the two-dimensional material to be transferred may be peeled off from the PMMA and then pressed onto the silicon oxide/silicon substrate.
Further, in S1, the PMMA is spin-coated for 2-3 times, and the thickness of the PMMA film is guaranteed to be 0.5-0.8 microns.
Furthermore, the PDMS block in S2 is punched by a cylindrical puncher, the aperture is 2-3 mm, the difficulty of searching for the two-dimensional material can be reduced in the later processing, and the refraction and reflection of PDMS to the microscope laser can be removed, so that the imaging of the two-dimensional material is clearer.
Further, the mass fraction of the sodium hydroxide solution in S3 is 30% to 35%, too high results in material waste, and too low reduces the etching rate.
Has the advantages that: compared with the prior art, the invention has the advantages that: firstly, the transfer method is suitable for a substrate with steps caused by flattening the substrate, adding electrodes and the like; secondly, a method of direct wet etching by using a sodium hydroxide solution is adopted, so that a two-dimensional material, particularly graphene, is prevented from curling in the transfer process, the transfer success rate is improved, and the cost is reduced; meanwhile, the isopropanol is used for cleaning the two-dimensional material after silicon oxide etching instead of deionized water, firstly, the isopropanol is volatile, and secondly, when the two-dimensional material is combined with a target substrate and PMMA is etched, the isopropanol can increase the combination force of the two-dimensional material and the substrate, so that the two-dimensional material cannot be curled and deflected.
Drawings
FIG. 1 is a schematic view of the transfer process of the present invention;
fig. 2 is a graph of transfer results of graphene in the example.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1
The two-dimensional material transfer method based on the substrate with the step as shown in fig. 1 includes a two-dimensional material preparation and transfer process, the two-dimensional material preparation adopts a mechanical peeling method, the transfer adopts an improved wet transfer method, and the two-dimensional material to be transferred adopts graphene in this embodiment.
The method specifically comprises the following steps:
(1) stripping graphene on a silicon oxide/silicon substrate to form a graphene layer, preferably the silicon oxide/silicon substrate with the thickness of 285 nm silicon oxide, spin-coating a PMMA anisole solution with the mass fraction of 4% on the graphene layer, and spin-coating for 2 times to ensure that the thickness of the PMMA film is 0.5 micron.
Graphene may also be peeled off first on PMMA and then pressed onto a silicon oxide/silicon substrate.
(2) The method comprises the following steps of pressing a graphene/PMMA layer onto a perforated PDMS square under an optical microscope, wherein the graphene is located in the center of a hole, the PDMS is easy to adhere to the PMMA due to the high viscosity of the PDMS, and the PMMA, the graphene and a substrate have strong van der Waals force and cannot cause the graphene to fall off; if the PDMS is directly contacted with the graphene layer, the transfer fails due to weak bonding force between the PDMS and the graphene, and thus the object of the present invention is not achieved.
Adopt cylindrical hole puncher, the hole diameter is 2 millimeters, can reduce the degree of difficulty of looking for the two-dimensional material in later stage processing, can also get rid of PDMS to the refraction and the reflection of microscope laser, makes the two-dimensional material formation of image more clear.
The PDMS thickness was 3 mm. When the thickness of PDMS is too low, the strength of PDMS is too low, which is not favorable for the transfer process.
(3) Putting the obtained whole sample into a sodium hydroxide solution to etch silicon oxide so as to release graphene/PMMA/PDMS; the mass fraction of the sodium hydroxide solution is 30 percent.
(4) The method comprises the steps of fishing out graphene/PMMA/PDMS, putting the graphene/PMMA/PDMS into an isopropanol solution for cleaning, then fishing out the graphene/PDMS to align the graphene at a target position, and then pressing the graphene and a target substrate tightly, wherein in order to transfer the graphene to the accurate position of the substrate, the process needs to be operated under an optical microscope.
The method for searching the graphene film under the optical microscope comprises the following steps: firstly, finding a hole area on PDMS under a 10-time lens, then directly finding graphene in the center area of the hole, and finally, changing a lens to a 50-time lens to amplify the graphene so as to perform subsequent operation.
And (5) performing the operations of the step (2) and the step (4) under an optical microscope to accurately position the positions of the graphene and the target substrate.
(5) And finally, placing the substrate in an acetone solution to dissolve PMMA, and after dissolution, taking the substrate under an optical microscope to observe whether the transfer is successful or not, wherein a Raman spectrum test can also be used.
As shown in fig. 2, a graph of the result of graphene transfer in this embodiment includes, from top to bottom, a graphene layer 1, a step 2 (electrode), a silicon nitride film 3 and a silicon substrate 4. The graphene is required to be in contact with electrodes at two ends, and can completely cover the small holes in the silicon nitride film. If dry transfer is used, this can lead to damage of the steps (electrodes) and thus destruction of the entire substrate. Therefore, wet transfer is used, and the PMMA is etched by acetone in the last step, so that the graphene is separated from the PMMA/PDMS layer and is successfully transferred to the target position of the substrate.
Example 2
The invention relates to a two-dimensional material transfer method based on a substrate with steps, which specifically comprises the following steps:
(1) stripping graphene on a silicon oxide/silicon substrate to form a graphene layer, spin-coating PMMA on the graphene layer for 2 times, and ensuring that the thickness of a PMMA film is 0.65 micron;
(2) compressing a graphene/PMMA layer onto a perforated PDMS square under an optical microscope, wherein the graphene is positioned in the center of a hole; a cylindrical punch was used, with a hole diameter of 2.5 mm.
(3) Putting the obtained whole sample into a sodium hydroxide solution to etch silicon oxide so as to release graphene/PMMA/PDMS; the mass fraction of the sodium hydroxide solution was 33%.
(4) And fishing out the graphene/PMMA/PDMS, putting the graphene/PMMA/PDMS into an isopropanol solution for cleaning, fishing out the graphene/PMMA/PDMS to align the graphene to a target position, and then pressing the graphene and the target substrate tightly.
(5) Finally, the PMMA was dissolved in acetone solution.
Example 3
The invention relates to a two-dimensional material transfer method based on a substrate with steps, which specifically comprises the following steps:
(1) stripping graphene on a silicon oxide/silicon substrate to form a graphene layer, spin-coating PMMA on the graphene layer for 3 times to ensure that the thickness of a PMMA film is 0.8 micron;
(2) compressing a graphene/PMMA layer onto a perforated PDMS square under an optical microscope, wherein the graphene is positioned in the center of a hole; a cylindrical punch was used, the hole diameter being 3 mm.
(3) Putting the obtained whole sample into a sodium hydroxide solution to etch silicon oxide so as to release graphene/PMMA/PDMS; the mass fraction of the sodium hydroxide solution is 35 percent.
(4) And fishing out the graphene/PMMA/PDMS, putting the graphene/PMMA/PDMS into an isopropanol solution for cleaning, fishing out the graphene/PMMA/PDMS to align the graphene to a target position, and then pressing the graphene and the target substrate tightly.
(5) Finally, the PMMA was dissolved in acetone solution.
Claims (6)
1. A two-dimensional material transfer method based on a substrate with steps is characterized by comprising the following steps:
s1, peeling the two-dimensional material to be transferred off the silicon oxide/silicon substrate to form a two-dimensional material layer, and spin-coating PMMA on the two-dimensional material layer to form a two-dimensional material/PMMA layer;
s2, pressing the two-dimensional material/PMMA layer onto the perforated PDMS block, wherein the two-dimensional material is located in the center of the hole;
s3, placing the sample obtained in the S2 in a sodium hydroxide solution to etch silicon oxide, and releasing a two-dimensional material/PMMA/PDMS;
s4, putting the two-dimensional material/PMMA/PDMS into isopropanol solution for cleaning, and then aligning the two-dimensional material to a target position on a target substrate for compressing;
s5, the sample obtained in S4 is placed in an acetone solution to dissolve PMMA, namely, the two-dimensional material is successfully transferred to the accurate position of the target substrate.
2. The two-dimensional material transfer method based on a stepped substrate according to claim 1, characterized in that: the two-dimensional material to be transferred is graphene.
3. The two-dimensional material transfer method based on a stepped substrate according to claim 1, characterized in that: in S1, the two-dimensional material to be transferred may be peeled off from the PMMA and pressed onto the silicon oxide/silicon substrate.
4. The two-dimensional material transfer method based on a stepped substrate according to claim 1, characterized in that: and (3) spin-coating PMMA for 2-3 times in S1 to ensure that the thickness of the PMMA film is 0.5-0.8 micron.
5. The two-dimensional material transfer method based on a stepped substrate according to claim 1, characterized in that: and the PDMS block in the S2 is punched by a cylindrical puncher, and the aperture is 2-3 mm.
6. The two-dimensional material transfer method based on a stepped substrate according to claim 1, characterized in that: the mass fraction of the sodium hydroxide solution in the S3 is 30-35%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010458450.0A CN111704128B (en) | 2020-05-27 | 2020-05-27 | Two-dimensional material transfer method based on substrate with steps |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010458450.0A CN111704128B (en) | 2020-05-27 | 2020-05-27 | Two-dimensional material transfer method based on substrate with steps |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111704128A true CN111704128A (en) | 2020-09-25 |
| CN111704128B CN111704128B (en) | 2022-06-28 |
Family
ID=72538221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010458450.0A Active CN111704128B (en) | 2020-05-27 | 2020-05-27 | Two-dimensional material transfer method based on substrate with steps |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111704128B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114920239A (en) * | 2022-05-10 | 2022-08-19 | 北京理工大学 | Two-dimensional material transfer or stacking method based on water vapor |
| CN115650295A (en) * | 2022-09-28 | 2023-01-31 | 浙江大学杭州国际科创中心 | Transfer method of thin-layer two-dimensional material |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102637584A (en) * | 2012-04-20 | 2012-08-15 | 兰州大学 | Transfer preparation method of patterned graphene |
| CN102842354A (en) * | 2011-06-20 | 2012-12-26 | 中国科学院上海硅酸盐研究所 | Graphene-based back electrode material with three-dimensional network structure and preparation method thereof |
| KR20130024360A (en) * | 2011-08-31 | 2013-03-08 | 한국기계연구원 | Transferring method of graphene, and graphene transferred flexible substrate thereby |
| CN103332685A (en) * | 2013-07-11 | 2013-10-02 | 常州二维碳素科技有限公司 | Transfer device and transfer method of graphene |
| CN104192833A (en) * | 2014-08-20 | 2014-12-10 | 中国科学院上海高等研究院 | Transfer method of graphene film |
| WO2015102459A1 (en) * | 2014-01-06 | 2015-07-09 | 광주과학기술원 | Graphene transfer method and graphene transfer apparatus using vacuum heat treatment |
| US20160176713A1 (en) * | 2013-08-05 | 2016-06-23 | National University Of Singapore | Method To Transfer Two Dimensional Film Grown On Metal-Coated Wafer To The Wafer Itself In a Face-To-Face Manner |
| US20170032962A1 (en) * | 2015-07-27 | 2017-02-02 | Graphenea, S.A. | Equipment and method to automatically transfer a graphene monolayer to a substrate |
| CN106435727A (en) * | 2016-11-17 | 2017-02-22 | 北京大学 | Method for preparing high-integrity suspended graphene by clean transfer |
| CN106647183A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Photoetching method of graphene device |
| CN107425081A (en) * | 2017-06-28 | 2017-12-01 | 中国人民解放军国防科学技术大学 | Topological insulator array type optical electric explorer based on graphene class two-dimensional material protection layer and its preparation method and application |
| RU2648920C1 (en) * | 2016-12-16 | 2018-03-28 | Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" | Method of thin films based on carbon nanomaterials producing |
| CN108562544A (en) * | 2018-04-17 | 2018-09-21 | 东南大学 | Stretchable flexibility liquid pool and preparation method thereof |
| CN110676218A (en) * | 2019-08-28 | 2020-01-10 | 西安工业大学 | Method for preparing two-dimensional transition metal sulfide by directional transfer CVD (chemical vapor deposition) method |
| CN110702702A (en) * | 2019-09-06 | 2020-01-17 | 华东师范大学 | Method for transferring two-dimensional material to ultrathin low-stress silicon nitride suspended film at fixed point |
| US20200031675A1 (en) * | 2016-12-28 | 2020-01-30 | Consejo Superior De Investigaciones Cientìficas (Csic) | Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate |
-
2020
- 2020-05-27 CN CN202010458450.0A patent/CN111704128B/en active Active
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102842354A (en) * | 2011-06-20 | 2012-12-26 | 中国科学院上海硅酸盐研究所 | Graphene-based back electrode material with three-dimensional network structure and preparation method thereof |
| KR20130024360A (en) * | 2011-08-31 | 2013-03-08 | 한국기계연구원 | Transferring method of graphene, and graphene transferred flexible substrate thereby |
| CN102637584A (en) * | 2012-04-20 | 2012-08-15 | 兰州大学 | Transfer preparation method of patterned graphene |
| CN103332685A (en) * | 2013-07-11 | 2013-10-02 | 常州二维碳素科技有限公司 | Transfer device and transfer method of graphene |
| US20160176713A1 (en) * | 2013-08-05 | 2016-06-23 | National University Of Singapore | Method To Transfer Two Dimensional Film Grown On Metal-Coated Wafer To The Wafer Itself In a Face-To-Face Manner |
| WO2015102459A1 (en) * | 2014-01-06 | 2015-07-09 | 광주과학기술원 | Graphene transfer method and graphene transfer apparatus using vacuum heat treatment |
| CN104192833A (en) * | 2014-08-20 | 2014-12-10 | 中国科学院上海高等研究院 | Transfer method of graphene film |
| US20170032962A1 (en) * | 2015-07-27 | 2017-02-02 | Graphenea, S.A. | Equipment and method to automatically transfer a graphene monolayer to a substrate |
| CN106435727A (en) * | 2016-11-17 | 2017-02-22 | 北京大学 | Method for preparing high-integrity suspended graphene by clean transfer |
| RU2648920C1 (en) * | 2016-12-16 | 2018-03-28 | Автономная некоммерческая образовательная организация высшего образования "Сколковский институт науки и технологий" | Method of thin films based on carbon nanomaterials producing |
| US20200031675A1 (en) * | 2016-12-28 | 2020-01-30 | Consejo Superior De Investigaciones Cientìficas (Csic) | Method for exfoliating and transferring graphene from a doped silicon carbide substrate to another substrate |
| CN106647183A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Photoetching method of graphene device |
| CN107425081A (en) * | 2017-06-28 | 2017-12-01 | 中国人民解放军国防科学技术大学 | Topological insulator array type optical electric explorer based on graphene class two-dimensional material protection layer and its preparation method and application |
| CN108562544A (en) * | 2018-04-17 | 2018-09-21 | 东南大学 | Stretchable flexibility liquid pool and preparation method thereof |
| CN110676218A (en) * | 2019-08-28 | 2020-01-10 | 西安工业大学 | Method for preparing two-dimensional transition metal sulfide by directional transfer CVD (chemical vapor deposition) method |
| CN110702702A (en) * | 2019-09-06 | 2020-01-17 | 华东师范大学 | Method for transferring two-dimensional material to ultrathin low-stress silicon nitride suspended film at fixed point |
Non-Patent Citations (4)
| Title |
|---|
| JI WON SUK ET AL: ""Transfer of CVD-Grown Monolayer Graphene onto Arbitrary Substrates"", 《ACS NANO》 * |
| LI, RH ET AL: ""Determination of PMMA residues on a chemical-vapor-deposited monolayer of graphene by neutron reflection and atomic force microscopy"", 《LANGMUIR》 * |
| XIAOTIAN WANG ET AL: ""Location-specific growth and transfer of arrayed MoS2 monolayers with controllable size"", 《2D MATERIALS》 * |
| 李春等: ""二维原子晶体半导体转移技术研究进展"", 《深圳大学学报(理工版)》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114920239A (en) * | 2022-05-10 | 2022-08-19 | 北京理工大学 | Two-dimensional material transfer or stacking method based on water vapor |
| CN114920239B (en) * | 2022-05-10 | 2023-10-20 | 北京理工大学 | Two-dimensional material transferring or stacking method based on water vapor |
| CN115650295A (en) * | 2022-09-28 | 2023-01-31 | 浙江大学杭州国际科创中心 | Transfer method of thin-layer two-dimensional material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111704128B (en) | 2022-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111704128B (en) | Two-dimensional material transfer method based on substrate with steps | |
| US9287175B2 (en) | Fabrication method for dicing of semiconductor wafers using laser cutting techniques | |
| JP5576356B2 (en) | Method for forming an ultra thin sheet suspended on a support member | |
| TW200805439A (en) | Method of processing semiconductor wafer chip | |
| US20050022862A1 (en) | Methods and apparatus for fabricating solar cells | |
| CN106289898A (en) | The preparation method of the molybdenum bisuphide TEM sample that a kind of number of plies is controlled | |
| JP2014182125A (en) | Multiple sample attachment to nano manipulator for high throughput sample preparation | |
| JP2002148176A (en) | Manufacturing method for probe tip structure | |
| US20140335678A1 (en) | Environmentally-assisted technique for transferring devices onto non-conventional substrates | |
| CN112129787A (en) | PPC film for preparing TEM sample by dry method fixed-point transfer and preparation method | |
| KR100345677B1 (en) | Defect analysis technology in image sensor device | |
| JP2015187974A (en) | Method of producing sample support film | |
| CN110753580B (en) | Flow passage structure device and manufacturing method thereof | |
| JP6301565B1 (en) | Method and apparatus for separating a microchip from a wafer and mounting the microchip on a substrate | |
| US20180342586A1 (en) | Method For Transferring Graphene Pieces Onto A Substrate | |
| JP3950628B2 (en) | Method for manufacturing a broad membrane mask | |
| US20220214250A1 (en) | Specimen Pretreatment Method | |
| CN213903361U (en) | PPC film for preparing TEM sample by dry method fixed-point transfer | |
| Wu et al. | Silica–gold bilayer-based transfer of focused ion beam-fabricated nanostructures | |
| US20230324788A1 (en) | Graphene-enabled Block Copolymer Lithography Transfer to Arbitrary Surfaces | |
| WO2022030297A1 (en) | Adhesive device and transfer device using same | |
| CN113421845B (en) | Transfer method of suspension two-dimensional material heterojunction | |
| CN116364532A (en) | Tungsten selenide thinning method, tungsten selenide material and field effect transistor | |
| JP2000031225A (en) | Defect evaluation of semiconductor substrate | |
| KR20180039999A (en) | Transcription method of two dimensional nano thinlayer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |