CN111695244A - Material irradiation defect storage method suitable for multivariate SRSCD simulation - Google Patents

Material irradiation defect storage method suitable for multivariate SRSCD simulation Download PDF

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CN111695244A
CN111695244A CN202010429420.7A CN202010429420A CN111695244A CN 111695244 A CN111695244 A CN 111695244A CN 202010429420 A CN202010429420 A CN 202010429420A CN 111695244 A CN111695244 A CN 111695244A
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陈丹丹
胡长军
杨文�
贺新福
储根深
任帅
白鹤
王珏
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University of Science and Technology Beijing USTB
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Abstract

本发明提供一种适用于多元SRSCD模拟的材料辐照缺陷存储方法,能够实现缺陷和反应的高效存储,以及快速查找、更新、插入、删除操作。所述方法包括:根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect‑Reaction List;从缺陷‑反应列表中随机选择一个反应;针对选择的反应,遍历每一个反应物,查找缺陷‑反应列表中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;其中,所述操作包括:更新、插入、删除;针对选择的反应,遍历每一个产物,查找缺陷‑反应列表中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作,本发明涉及面向核材料辐照损伤模拟领域和高性能计算领域。

Figure 202010429420

The invention provides a material irradiation defect storage method suitable for multivariate SRSCD simulation, which can realize efficient storage of defects and reactions, and fast search, update, insert and delete operations. The method includes: creating a Defect-Reaction List based on a linked list according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in; randomly selecting a reaction from the defect-reaction list; for the selected reaction, traverse each reaction search for defects of the same type as the reactants in the defect-reaction list, and perform corresponding operations according to the number of defects found; wherein, the operations include: update, insert, delete; for the selected reactions, traverse each product , to find out whether there are defects of the same type as the product type in the defect-reaction list, and perform corresponding operations according to the search results.

Figure 202010429420

Description

一种适用于多元SRSCD模拟的材料辐照缺陷存储方法A Method for Storage of Irradiation Defects in Materials Suitable for Multivariate SRSCD Simulation

技术领域technical field

本发明涉及面向核材料辐照损伤模拟领域和高性能计算领域,特别是指一种适用于多元SRSCD模拟的材料辐照缺陷存储方法。The invention relates to the field of nuclear material irradiation damage simulation and high-performance computing, in particular to a material irradiation defect storage method suitable for multivariate SRSCD simulation.

背景技术Background technique

核反应堆中结构材料的服役性能主要取决于辐照下的微观结构演化,这种演化行为则是由不同的时间尺度和空间尺度上的现象所驱动。例如,级联碰撞通常在几皮秒内发生,跨越几十个纳米,而随后的缺陷扩散及其导致的其他缺陷演化行为则需要几秒甚至更长的时间,空间上的跨度则达到微米到米甚至更长的尺度。The service performance of structural materials in nuclear reactors mainly depends on the microstructural evolution under irradiation, which is driven by phenomena at different time and spatial scales. For example, cascading collisions typically occur within a few picoseconds, spanning tens of nanometers, while the subsequent defect diffusion and its resulting other defect evolution behaviors take seconds or even longer, spanning spatially from micrometers to micrometers. meters and even longer scales.

基于平均场速率理论发展而来的团簇动力学(Cluster Dynamics,CD)已成为处理这种长时空尺度问题的有效手段。“平均场”的特征使得CD能够不受时空尺度的限制,可以模拟很高辐照剂量(100dpa(displacements per atom))和时间尺度(秒~数年)下的缺陷演化。在平均场假设下,辐照缺陷随时间的演化被描述为一系列缺陷浓度对时间的常微分方程(ODE),如下:Cluster Dynamics (CD), which is developed based on the mean field velocity theory, has become an effective means to deal with such long time and space scale problems. The "mean field" feature makes CD not limited by the time and space scale, and can simulate the defect evolution under very high irradiation dose (100dpa (displacements per atom)) and time scale (seconds to years). Under the mean-field assumption, the evolution of irradiated defects over time is described as a series of ordinary differential equations (ODEs) of defect concentration versus time as follows:

Figure BDA0002499972030000011
Figure BDA0002499972030000011

其中,右边第一项为缺陷i的产生速率(0阶反应);第二项和第三项分别缺陷i变为其他缺陷以及其他缺陷变为缺陷i的速率(1阶反应);第四项和第五项表示两种缺陷间的反应导致缺陷i的消失和产生的速率(2阶反应)。可以看出,上述演化方程是一组耦合的微分方程组,且方程数量一般随着缺陷种类的增加呈指数级增长,达106~1012,此时,需要近似的方法进行求解。分组方法和Fokker-Planck方法是目前普遍使用的两种方法。但其求解能力受限于ODE系统的维度(即缺陷种类),通常很难处理复杂缺陷团簇的演化问题。Among them, the first item on the right is the generation rate of defect i (0-order reaction); the second and third items are the rate at which defect i becomes other defects and other defects become defect i (1-order reaction); the fourth item and the fifth term represents the rate at which the reaction between the two defects leads to the disappearance and generation of defect i (second-order reaction). It can be seen that the above evolution equations are a set of coupled differential equations, and the number of equations generally increases exponentially with the increase of defect types, reaching 10 6 to 10 12 . At this time, an approximate method is required to solve. The grouping method and the Fokker-Planck method are two commonly used methods at present. However, its solving ability is limited by the dimension of the ODE system (ie, defect types), and it is usually difficult to deal with the evolution of complex defect clusters.

另一种求解CD的方法则是随机团簇动力学(Stochastic Cluster Dynamics,SCD),它是CD的一种随机变体,通过将平均场CD限制在有限体积V内,来将上述缺陷浓度的演化方程转变为在限体积V中演化整数值的缺陷数量。SCD通过随机抽样来模拟有限体积内的缺陷演化过程,从而避免了大量ODEs的组合展开,非常适合于处理复杂缺陷团簇的演化问题。正是由于其考虑有限体积内的缺陷演化,如果考虑多个这样的体积元,再加上不同体积元间的缺陷浓度差异以及扩散,则随机团簇动力学可以具有空间分辨率,即空间分辨随机团簇动力学(Spatially Resolved Stochastic Cluster Dynamics,SRSCD)。Another method for solving CD is Stochastic Cluster Dynamics (SCD), which is a stochastic variant of CD that limits the above-mentioned defect concentration by confining the mean field CD to a finite volume V. The evolution equation is transformed into the number of defects evolving integer-valued in the confined volume V. SCD simulates the evolution process of defects in a finite volume by random sampling, thus avoiding the combinatorial expansion of a large number of ODEs, and is very suitable for dealing with the evolution of complex defect clusters. It is precisely because it considers the evolution of defects in a finite volume that if multiple such volume elements are considered, coupled with the difference in defect concentration and diffusion between different volume elements, the stochastic cluster dynamics can have spatial resolution, that is, spatial resolution Stochastic Cluster Dynamics (Spatially Resolved Stochastic Cluster Dynamics, SRSCD).

在SRSCD中,认为每个体积元内的缺陷均匀分布,缺陷可以聚集和分解,而在体积元之间存在浓度差及其导致的扩散,缺陷间的各种反应的反应速率由经典的CD方法推导而来,反应的选择和时间增量则由经典的动力学蒙特卡洛(kinetic Monte Carlo,KMC)算法确定。在模拟过程中,每个反应发生后都需要更新反应涉及的缺陷,并更新相应的反应,这可能涉及到旧缺陷/反应的删除、新缺陷/反应的加入以及反应速率的更新。此外,反应的数量也会随着模拟的进行而迅速增长至数千甚至数百万个,且随着反应的进行,缺陷的类型及尺寸也是在动态地增长的。要想实现缺陷及其反应的正确更新,就需要在模拟过程中有效定位反应涉及的缺陷,以及发生变化的缺陷所关联的反应。这就需要建立一个合适的数据结构来实现缺陷及反应的高效存储,以及快速查找、更新、插入及删除操作。但是,针对多元SRSCD模拟中缺陷种类和反应类型多样、动态增长、且反应类型与参与反应的缺陷类型密切相关的特点,现有技术中采用的数据结构无法实现缺陷及反应的高效存储,以及快速查找、更新、插入及删除操作。In SRSCD, it is considered that the defects in each volume element are uniformly distributed, the defects can be aggregated and decomposed, and there is a concentration difference between the volume elements and the resulting diffusion, and the reaction rates of various reactions between the defects are determined by the classical CD method. Derived, the choice of reaction and the time increment are determined by the classical kinetic Monte Carlo (KMC) algorithm. During the simulation, the defects involved in the reaction need to be updated after each reaction occurs, and the corresponding reaction is updated, which may involve the deletion of old defects/reactions, the addition of new defects/reactions, and the update of reaction rates. In addition, the number of reactions rapidly grows to thousands or even millions as the simulation progresses, and the type and size of defects grow dynamically as the reaction progresses. Achieving the correct updating of defects and their reactions requires efficient locating of the defects involved in the reactions during the simulation, as well as the reactions associated with the changed defects. This requires the establishment of a suitable data structure to achieve efficient storage of defects and reactions, as well as fast lookup, update, insert and delete operations. However, in view of the characteristics of diverse and dynamic growth of defect types and reaction types in multivariate SRSCD simulations, and the reaction types are closely related to the defect types involved in the reaction, the data structure adopted in the prior art cannot achieve efficient storage of defects and reactions, and fast storage of defects and reactions. Find, update, insert and delete operations.

发明内容SUMMARY OF THE INVENTION

本发明要解决的技术问题是提供一种适用于多元SRSCD模拟的材料辐照缺陷存储方法,以解决现有技术所存在的无法实现缺陷及反应的高效存储,以及快速查找、更新、插入及删除操作的问题。The technical problem to be solved by the present invention is to provide a material irradiation defect storage method suitable for multivariate SRSCD simulation, so as to solve the problems existing in the prior art that cannot realize efficient storage of defects and reactions, and quickly search, update, insert and delete operational problems.

为解决上述技术问题,本发明实施例提供一种适用于多元SRSCD模拟的材料辐照缺陷存储方法,包括:In order to solve the above-mentioned technical problems, an embodiment of the present invention provides a method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, including:

根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List,其中,SRSCD表示空间分辨随机团簇动力学,Defect-ReactionList表示缺陷-反应列表;According to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, a Defect-Reaction List based on a linked list is created, where SRSCD represents spatially resolved stochastic cluster dynamics, and Defect-ReactionList represents the defect-reaction list;

从Defect-Reaction List中随机选择一个反应;Randomly select a reaction from the Defect-Reaction List;

针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;其中,所述操作包括:更新、插入、删除;For the selected reaction, traverse each reactant, find defects of the same type as the reactant in the Defect-Reaction List, and perform corresponding operations according to the number of defects found; wherein, the operations include: update, insert, delete;

针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作。For the selected reaction, traverse each product to find out whether there are defects of the same type as the product in the Defect-Reaction List, and perform corresponding operations according to the search results.

进一步地,所述根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List包括:Further, according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, creating the Defect-Reaction List based on the linked list includes:

构造用于存储缺陷链表头节点的结构体defectHead、存储缺陷的结构体defect和存储反应的结构体reaction;Construct the structure defectHead for storing the head node of the defect list, the structure defect for storing the defect, and the structure reaction for storing the reaction;

根据构造的结构体defectHead、defect、reaction及SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List。According to the constructed structures defectHead, defect, reaction and SRSCD to simulate the defects in the initial state of the system and the reactions that the defects can participate in, a Defect-Reaction List based on the linked list is created.

进一步地,结构体defectHead中的成员包括:cell和*defectList,其中,cell表示体积元编号,*defectList表示指向缺陷的指针;Further, the members in the structure defectiveHead include: cell and *defectList, where cell represents the volume element number, and *defectList represents the pointer to the defect;

结构体defect中的成员包括:defectType、num、isMobile、*down和*right;其中,defectType表示缺陷类型,num表示类型defectType的缺陷的数量,isMobile用于标识该缺陷是否是可动缺陷,*down表示指向下一个缺陷的指针,*right表示指向反应的指针;The members in the structure defect include: defectType, num, isMobile, *down and *right; among them, defectType represents the defect type, num represents the number of defects of type defectType, isMobile is used to identify whether the defect is a movable defect, *down Represents the pointer to the next defect, *right represents the pointer to the reaction;

结构体reaction中的成员包括:type、numReactions、numProducts、reactions、products、cell、taskid、reactionRate和*right;其中,type用于标识反应的类型,numReactions为反应的个数,numProducts为反应物的个数,reactions为反应的类型,products为产物的类型,cell为产物所在的体积元编号,taskid为产物所在的进程编号,reactionRate为反应的反应速率,*right表示指向下一个反应的指针。The members in the structure reaction include: type, numReactions, numProducts, reactions, products, cell, taskid, reactionRate, and *right; among them, type is used to identify the type of reaction, numReactions is the number of reactions, and numProducts is the number of reactants. number, reactions is the type of reaction, products is the type of product, cell is the volume element number where the product is located, taskid is the process number where the product is located, reactionRate is the reaction rate of the reaction, and *right represents the pointer to the next reaction.

进一步地,创建的Defect-Reaction List一共三个维度,其中,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”的数量;Further, the created Defect-Reaction List has a total of three dimensions, of which the first dimension is a two-dimensional array of type defectHead, which is the head node of the defect list. The number of behavior volume elements in the two-dimensional array is listed as "layer". "quantity;

第二个维度为类型为defect的链表,用于存储对应体积元中的所有缺陷,根据缺陷的类型将缺陷按层存储;The second dimension is a linked list of type defect, which is used to store all defects in the corresponding volume element, and store defects in layers according to the type of defects;

第三个维度为类型为reaction的链表,用于存储体积元中每个缺陷相关的反应。The third dimension is a linked list of type reaction, which is used to store the reactions related to each defect in the volume element.

进一步地,在从Defect-Reaction List中随机选择一个反应之前,所述方法还包括:Further, before randomly selecting a reaction from the Defect-Reaction List, the method further includes:

为可动缺陷创建可动缺陷列表mobileDefectList,用于存储可动缺陷;Create a movable defect list mobileDefectList for movable defects to store movable defects;

其中,可动缺陷列表mobileDefectList共2个维度,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”的数量;Among them, the movable defect list mobileDefectList has a total of 2 dimensions, the first dimension is a two-dimensional array of type defectHead, which is the head node of the defect list, the number of behavior volume elements in the two-dimensional array, and the number of columns listed as "layers";

第二个维度为类型为defect的链表,用于存储对应体积元中的所有缺陷,根据缺陷的类型将缺陷按层存储;The second dimension is a linked list of type defect, which is used to store all defects in the corresponding volume element, and store defects in layers according to the type of defects;

并将每个缺陷的*right指针的指向设置为空,用于更新聚集反应。And set each defect's *right pointer to null to update the aggregated reaction.

进一步地,所述针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作包括:Further, for the selected reaction, traverse each reactant, find defects of the same type as the reactant type in the Defect-Reaction List, and perform corresponding operations according to the number of found defects, including:

针对选择的反应,遍历每一个反应物,根据反应物的类型在Defect-ReactionList中查找同类型的缺陷,判断查找到的缺陷数量是否大于1;For the selected reaction, traverse each reactant, find the same type of defects in the Defect-ReactionList according to the type of the reactant, and judge whether the number of defects found is greater than 1;

若大于1,则该缺陷数量减1,并更新与该缺陷相关的反应及反应速率;If it is greater than 1, the number of defects is reduced by 1, and the reaction and reaction rate related to the defect are updated;

否则,则从Defect-Reaction List中删除该缺陷及相关的反应。Otherwise, the defect and associated reactions are removed from the Defect-Reaction List.

进一步地,所述从Defect-Reaction List中删除该缺陷及相关的反应包括:Further, the described deletion of this defect and related reactions from the Defect-Reaction List includes:

若删除的缺陷为不可动缺陷,则删除缺陷后,再依次删除与之相关的反应;If the deleted defect is an immovable defect, after deleting the defect, delete the related reactions in turn;

若删除的缺陷为可动缺陷,则删除缺陷及与之相关的反应后,遍历其他缺陷,删除每个缺陷的反应链表中与该可动缺陷相关的聚集反应。If the deleted defect is a movable defect, after deleting the defect and its related reactions, traverse other defects, and delete the aggregation reaction related to the movable defect in the reaction list of each defect.

进一步地,所述针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作包括:Further, for the selected reaction, traverse each product to find out whether there are defects of the same type as the product type in the Defect-Reaction List, and perform corresponding operations according to the search results, including:

针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷;For the selected reaction, traverse each product to find out whether there are defects of the same type as the product type in the Defect-Reaction List;

若存在,则该缺陷数量加1,并更新与该缺陷相关的反应及反应速率;If it exists, add 1 to the number of defects, and update the reaction and reaction rate related to the defect;

否则,则向Defect-Reaction List中插入该缺陷及相关的反应。Otherwise, insert the defect and related reactions into the Defect-Reaction List.

进一步地,所述向Defect-Reaction List中插入该缺陷及相关的反应包括:Further, the described defect and related reactions inserted into the Defect-Reaction List include:

若插入的缺陷为不可动缺陷,则插入缺陷后,再依次插入与之相关的反应;If the inserted defect is an immovable defect, after the defect is inserted, the related reactions are inserted in sequence;

若插入的缺陷为可动缺陷,则插入缺陷及与之相关的反应后,遍历其他缺陷,在每个缺陷的反应链表后增加与该可动缺陷相关的聚集反应。If the inserted defect is a movable defect, after the defect and its related reactions are inserted, other defects are traversed, and the aggregation reaction related to the movable defect is added after the reaction list of each defect.

本发明的上述技术方案的有益效果如下:The beneficial effects of the above-mentioned technical solutions of the present invention are as follows:

上述方案中,根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List,其中,SRSCD表示空间分辨随机团簇动力学;从Defect-Reaction List中随机选择一个反应;针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作;这样,针对多元SRSCD模拟中缺陷种类和反应类型多样、动态增长、且反应类型与参与反应的缺陷类型密切相关的特点,基于链表的思想,采用适用于多元SRSCD模拟中缺陷及其反应的高效存储结构——Defect-ReactionList,在节省内存的基础上,实现缺陷和反应的高效存储,以及快速查找、更新、插入、删除操作,进而提高SRSCD的模拟效率。In the above scheme, according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, a Defect-Reaction List based on a linked list is created, where SRSCD represents spatially resolved stochastic cluster dynamics; one is randomly selected from the Defect-Reaction List. Reaction; for the selected reaction, traverse each reactant, look for defects of the same type as the reactant in the Defect-Reaction List, and perform corresponding operations according to the number of defects found; for the selected reaction, traverse each product, find Whether there is a defect of the same type as the product type in the Defect-Reaction List, perform corresponding operations according to the search results; in this way, the defect types and reaction types in the multivariate SRSCD simulation are diverse, dynamically growing, and the reaction types are closely related to the defect types involved in the reaction. Relevant features, based on the idea of linked list, adopt an efficient storage structure suitable for defects and their reactions in multivariate SRSCD simulation - Defect-ReactionList, on the basis of saving memory, realize efficient storage of defects and reactions, as well as fast search and update , insert and delete operations, thereby improving the simulation efficiency of SRSCD.

附图说明Description of drawings

图1为本发明实施例提供的适用于多元SRSCD模拟的材料辐照缺陷存储方法的流程示意图;1 is a schematic flowchart of a material irradiation defect storage method suitable for multivariate SRSCD simulation provided by an embodiment of the present invention;

图2为本发明实施例提供的适用于多元SRSCD模拟的材料辐照缺陷存储方法的详细流程示意图;FIG. 2 is a detailed flowchart of a method for storing irradiation defects of materials suitable for multivariate SRSCD simulation provided by an embodiment of the present invention;

图3为本发明实施例提供的Defect-Reaction List中使用的结构体的结构示意图;3 is a schematic structural diagram of a structure used in the Defect-Reaction List provided by an embodiment of the present invention;

图4为本发明实施例提供的6个扩散方向的示意图;4 is a schematic diagram of six diffusion directions provided by an embodiment of the present invention;

图5为本发明实施例提供的Defect-Reaction List的示意图;5 is a schematic diagram of a Defect-Reaction List provided by an embodiment of the present invention;

图6为本发明实施例提供的删除缺陷及更新相关反应的示意图;6 is a schematic diagram of a deletion defect and an update related reaction provided by an embodiment of the present invention;

图7为本发明实施例提供的插入缺陷及更新相关反应的示意图。FIG. 7 is a schematic diagram of an insertion defect and an update-related reaction according to an embodiment of the present invention.

具体实施方式Detailed ways

为使本发明要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。In order to make the technical problems, technical solutions and advantages to be solved by the present invention more clear, the following will be described in detail with reference to the accompanying drawings and specific embodiments.

本发明针对现有的无法实现缺陷及反应的高效存储,以及快速查找、更新、插入及删除操作的问题,提供一种适用于多元SRSCD模拟的材料辐照缺陷存储方法。Aiming at the existing problems of incapable of realizing efficient storage of defects and reactions, as well as fast search, update, insert and delete operations, the invention provides a material irradiation defect storage method suitable for multivariate SRSCD simulation.

本实施例中,为了更好地理解本发明,先对缺陷、反应的相关术语做如下简要说明:In this embodiment, in order to better understand the present invention, the related terms of defects and reactions are briefly explained as follows:

(1)缺陷(1) Defects

缺陷包括:可动缺陷和不可动可动缺陷;其中,Defects include: movable defects and immovable movable defects; among which,

可动缺陷指可发生扩散反应的缺陷;Movable defects refer to defects that can undergo diffusion reactions;

不可动缺陷指不能扩散的缺陷。Immovable defects refer to defects that cannot diffuse.

(2)反应(2) Reaction

对于每一个反应,称参与反应的缺陷为反应物(reactants),反应产生的缺陷为产物(products),缺陷间的反应主要包括以下五类:For each reaction, the defects involved in the reaction are called reactants, and the defects produced by the reaction are products. The reactions between defects mainly include the following five categories:

0阶反应:指的是初始缺陷的产生,反应物为0个;若为电子辐照,则产物为2点缺陷(空位和自间隙原子);若为中子辐照,则产物为多个缺陷,在本实施例中产物的数量可以用-1标识;0-order reaction: refers to the generation of initial defects, and the reactant is 0; if it is electron irradiation, the product is 2 point defects (vacancies and self-interstitial atoms); if it is neutron irradiation, the product is multiple Defects, in this example, the number of products can be marked with -1;

1阶反应:包括分解反应(dissociation)和阱吸收而消失的反应(sinkRemovel),其中,dissociation的反应物为一个,产物为2个;sinkRemovel的反应物为1个,产物为2个;点缺陷不能发生dissociation反应,只有可动缺陷能发生sinkRemovel反应;1st-order reaction: including decomposition reaction (dissociation) and sink absorption and disappearance reaction (sinkRemovel), among which, dissociation has one reactant and two products; sinkRemovel has one reactant and two products; point defect The dissociation reaction cannot occur, only the movable defect can have the sinkRemovel reaction;

扩散反应(diffusion):缺陷从一个体积元扩散到另一个体积元。反应物为1个,产物为1个;Diffusion: Defects diffuse from one volume element to another. The reactant is 1, and the product is 1;

2阶反应:为聚集反应(clustering),至少有一个可动缺陷参与,反应物为2个,产物为0个、1个或多个,产物的具体个数视反应物类型而定。Second-order reaction: It is a clustering reaction, at least one movable defect is involved, there are two reactants, and there are 0, 1 or more products, and the specific number of products depends on the type of reactants.

如图1所示,本发明实施例提供的适用于多元SRSCD模拟的材料辐照缺陷存储方法,包括:As shown in FIG. 1 , a method for storing material irradiation defects suitable for multivariate SRSCD simulation provided by an embodiment of the present invention includes:

S101,根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List,其中,SRSCD表示空间分辨随机团簇动力学,其中,Defect-Reaction List表示缺陷-反应列表;S101 , according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, create a Defect-Reaction List based on a linked list, where SRSCD represents spatially resolved stochastic cluster dynamics, where Defect-Reaction List represents a defect-reaction list ;

S102,从Defect-Reaction List中随机选择一个反应;S102, randomly select a reaction from the Defect-Reaction List;

S103,针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;其中,所述操作包括:更新、插入、删除;S103, for the selected reaction, traverse each reactant, search for defects of the same type as the reactant type in the Defect-Reaction List, and perform corresponding operations according to the number of found defects; wherein, the operations include: update, insert, delete;

S104,针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作。S104, for the selected reaction, traverse each product, find out whether there is a defect of the same type as the product type in the Defect-Reaction List, and perform a corresponding operation according to the search result.

本发明实施例所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-ReactionList,其中,SRSCD表示空间分辨随机团簇动力学;从Defect-Reaction List中随机选择一个反应;针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作;这样,针对多元SRSCD模拟中缺陷种类和反应类型多样、动态增长、且反应类型与参与反应的缺陷类型密切相关的特点,基于链表的思想,采用适用于多元SRSCD模拟中缺陷及其反应的高效存储结构——Defect-Reaction List,在节省内存的基础上,实现缺陷和反应的高效存储,以及快速查找、更新、插入、删除操作,进而提高SRSCD的模拟效率。According to the method for storing material irradiation defects suitable for multivariate SRSCD simulation according to the embodiment of the present invention, a Defect-ReactionList based on a linked list is created according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, wherein SRSCD represents spatial resolution Random cluster dynamics; randomly select a reaction from the Defect-Reaction List; for the selected reaction, traverse each reactant, look for defects of the same type as the reactant in the Defect-Reaction List, and execute according to the number of defects found Corresponding operations; for the selected reaction, traverse each product to find out whether there are defects of the same type as the product type in the Defect-Reaction List, and perform corresponding operations according to the search results; in this way, for the defect types and reaction types in the multivariate SRSCD simulation The characteristics of diversity, dynamic growth, and the type of reaction are closely related to the type of defect involved in the reaction. Based on the idea of linked list, an efficient storage structure suitable for defects and their reactions in multivariate SRSCD simulation is adopted - Defect-Reaction List, which saves memory. On this basis, efficient storage of defects and reactions, as well as fast search, update, insert, and delete operations are realized, thereby improving the simulation efficiency of SRSCD.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,如图2所示,所述根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List包括:In the aforementioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, as shown in FIG. 2 , according to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, a linked list is created based on The Defect-Reaction List includes:

构造用于存储缺陷链表头节点的结构体defectHead、存储缺陷的结构体defect和存储反应的结构体reaction;Construct the structure defectHead for storing the head node of the defect list, the structure defect for storing the defect, and the structure reaction for storing the reaction;

根据构造的结构体defectHead、defect、reaction及SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List。According to the constructed structures defectHead, defect, reaction and SRSCD to simulate the defects in the initial state of the system and the reactions that the defects can participate in, a Defect-Reaction List based on the linked list is created.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,如图3所示,结构体defectHead中的成员包括:cell和*defectList,其中,cell表示体积元编号,*defectList表示指向缺陷的指针;In the above-mentioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, as shown in FIG. 3 , the members in the structural body defectHead include: cell and *defectList, where cell represents the volume element number, *defectList represents a pointer to a defect;

结构体defect中的成员包括:defectType、num、isMobile、*down和*right;其中,defectType表示缺陷类型,其中numSpecies等于SRSCD模拟体系所考虑的最大元素种类(如,Fe-Cu体系的numSpecies为2,Fe-Cu-He体系的numSpecies为3);num表示类型defectType的缺陷的数量;isMobile用于标识该缺陷是否是可动缺陷(例如,可动缺陷,isMobile=1;不可动缺陷,isMobile=0);*down表示指向下一个缺陷的指针;*right表示指向反应的指针;The members in the structure defect include: defectType, num, isMobile, *down, and *right; where defectType represents the defect type, and numSpecies is equal to the largest element species considered by the SRSCD simulation system (for example, the numSpecies of the Fe-Cu system is 2 , the numSpecies of the Fe-Cu-He system is 3); num represents the number of defects of type defectType; isMobile is used to identify whether the defect is a movable defect (for example, a movable defect, isMobile=1; an immovable defect, isMobile= 0); *down indicates the pointer to the next defect; *right indicates the pointer to the reaction;

结构体reaction中的成员包括:type、numReactions、numProducts、reactions、products、cell、taskid、reactionRate和*right;其中,type用于标识反应的类型,numReactions为反应的个数,components是当前缺陷所包含的元素种类数,即numSpecies≥components,若该类反应为dissociation反应,则numReactions的值取决于dissociation反应相关的缺陷所含的元素种类数components;numProducts为反应物的个数;reactions为反应的类型;products为产物的类型;cell为产物所在的体积元编号;taskid为产物所在的进程编号(用于并行模拟);reactionRate为反应的反应速率;*right表示指向下一个反应的指针。The members in the structure reaction include: type, numReactions, numProducts, reactions, products, cell, taskid, reactionRate, and *right; among them, type is used to identify the type of reaction, numReactions is the number of reactions, and components is the current defect. The number of element species, that is, numSpecies≥components, if the type of reaction is a dissociation reaction, the value of numReactions depends on the number of element species contained in the defects related to the dissociation reaction components; numProducts is the number of reactants; reactions is the type of reaction ; products is the type of the product; cell is the volume element number where the product is located; taskid is the process number where the product is located (for parallel simulation); reactionRate is the reaction rate of the reaction; *right indicates the pointer to the next reaction.

本实施例中,图3是Defect-Reaction List中使用的结构体,其中,虚线箭头表示结构体内指针型成员所指向的结构类型,实线箭头表示4类反应(dissociation、sinkRemovel、diffusion和clustering)在Defect-Reaction List中存储的循序。需要指出的是,0阶反应不存储在Defect-Reaction List中,而是单独存储。In this embodiment, Fig. 3 is the structure used in the Defect-Reaction List, wherein the dashed arrows represent the structure types pointed to by the pointer-type members in the structure, and the solid arrows represent 4 types of reactions (dissociation, sinkRemovel, diffusion and clustering) The sequence stored in the Defect-Reaction List. It should be pointed out that the 0-order reactions are not stored in the Defect-Reaction List, but are stored separately.

本实施例中,对于扩散反应,有右、左、前、后、上、下,6个扩散方向,如图4所示。In this embodiment, for the diffusion reaction, there are 6 diffusion directions, right, left, front, back, up, and down, as shown in FIG. 4 .

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,如图5所示,创建的Defect-Reaction List一共三个维度,其中,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”(level)的数量,其中,level的数量与numSpecies有关;In the aforementioned specific implementation of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, as shown in FIG. 5 , the created Defect-Reaction List has three dimensions in total, wherein the first dimension is the type of defectHead The two-dimensional array of is the head node of the defect list, the number of behavioral volume elements in the two-dimensional array, and the number of columns as "levels", where the number of levels is related to numSpecies;

第二个维度为类型为defect的链表,用于存储对应体积元中的所有缺陷,根据缺陷的类型将缺陷按层存储;The second dimension is a linked list of type defect, which is used to store all defects in the corresponding volume element, and store defects in layers according to the type of defects;

第三个维度为类型为reaction的链表,用于存储体积元中每个缺陷相关的反应,其中,缺陷作为反应链表的头节点,对于每一个缺陷,依次存储与之相关的反应;对于Clustering反应,依次存储该缺陷与体积元内每种可动缺陷之间的Clustering反应。The third dimension is a linked list of type reaction, which is used to store the reactions related to each defect in the volume element. The defect is used as the head node of the reaction linked list. For each defect, the reactions related to it are stored in turn; for Clustering reactions , and sequentially store the clustering reaction between the defect and each movable defect in the volume element.

本实施例中,图5中“def”是defect的缩写,表示缺陷;“reac”是reaction的缩写,表示反应。In this embodiment, in FIG. 5 , “def” is an abbreviation of defect, indicating a defect; “reac” is an abbreviation of reaction, indicating a reaction.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,在从Defect-Reaction List中随机选择一个反应之前,所述方法还包括:In the above-mentioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, before randomly selecting a reaction from the Defect-Reaction List, the method further includes:

为可动缺陷创建可动缺陷列表mobileDefectList,用于存储可动缺陷;Create a movable defect list mobileDefectList for movable defects to store movable defects;

其中,可动缺陷列表mobileDefectList共2个维度,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”(level)的数量;Among them, the movable defect list mobileDefectList has a total of 2 dimensions. The first dimension is a two-dimensional array of type defectHead, which is the head node of the defect list. The number of behavior volume elements in the two-dimensional array is listed as "level" (level) quantity;

第二个维度为类型为defect的链表,用于存储对应体积元中的所有缺陷,根据缺陷的类型将缺陷按“层”存储;The second dimension is a linked list of type defect, which is used to store all defects in the corresponding volume element, and store defects in "layers" according to the type of defects;

并将每个缺陷的*right指针的指向设置为空,用于更新Clustering反应。And set each defect's *right pointer to null to update the Clustering response.

本实施例中,创建的列表mobileDefectList,只用图5中第一个维度和第二个维度。In this embodiment, the created list mobileDefectList only uses the first dimension and the second dimension in FIG. 5 .

本实施例中,从Defect-Reaction List中随机选择一个反应包括:In this embodiment, randomly selecting a reaction from the Defect-Reaction List includes:

首先查看0阶反应是否满足

Figure BDA0002499972030000091
若满足,则不再去Defect-Reaction List中选择反应,若不满足,再在Defect-Reaction List中依次查看每一“层”的每个缺陷所对应的每个反应,利用随机数选择一个反应μ,其中,反应μ满足
Figure BDA0002499972030000092
其中,Rv为第v个反应的反应速率;Rtot为总反应速率;r1为随机数,r1∈(0,1]。First check whether the 0-order reaction is satisfied
Figure BDA0002499972030000091
If it is satisfied, do not go to the Defect-Reaction List to select the reaction, if not, then check each reaction corresponding to each defect of each "layer" in the Defect-Reaction List in turn, and use random numbers to select a reaction μ, where the reaction μ satisfies
Figure BDA0002499972030000092
Among them, R v is the reaction rate of the vth reaction; R tot is the total reaction rate; r 1 is a random number, r 1 ∈ (0, 1].

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,所述针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作包括:In the above-mentioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, for the selected reaction, traverse each reactant to search for defects of the same type as the reactant in the Defect-Reaction List , and perform corresponding actions based on the number of defects found including:

针对选择的反应,遍历每一个反应物,根据反应物的类型在Defect-ReactionList中查找同类型的缺陷,判断查找到的缺陷数量是否大于1;For the selected reaction, traverse each reactant, find the same type of defects in the Defect-ReactionList according to the type of the reactant, and judge whether the number of defects found is greater than 1;

若大于1,则该缺陷数量减1,并更新与该缺陷相关的反应及反应速率;If it is greater than 1, the number of defects is reduced by 1, and the reaction and reaction rate related to the defect are updated;

否则,则从Defect-Reaction List中删除该缺陷及相关的反应。Otherwise, the defect and associated reactions are removed from the Defect-Reaction List.

本实施例中,针对选择的反应,遍历每一个反应,根据反应物的类型在Defect-Reaction List中查找同类型的缺陷,若查找到的缺陷数量是大于1,则更新缺陷及相关反应,具体步骤如下:In this embodiment, for the selected reactions, traverse each reaction, and search the Defect-Reaction List for defects of the same type according to the type of reactants. If the number of defects found is greater than 1, the defects and related reactions are updated. Proceed as follows:

A1.该缺陷数量减1,若该缺陷是可动缺陷,则同时将mobileDefectList中相应的缺陷数量减1;A1. The number of defects is reduced by 1. If the defect is a movable defect, the corresponding number of defects in the mobileDefectList will be reduced by 1 at the same time;

A2.依次更新与之相关的Dissociation、sinkRemovel、Diffusion、Clustering反应的反应速率,根据反应速率是否等于0,以及图3中该缺陷*right指针指向的反应链表中的反应进行更新,包括如下可能的操作:A2. Update the reaction rates of the related Dissociation, sinkRemovel, Diffusion, and Clustering reactions in turn, according to whether the reaction rate is equal to 0, and the reaction in the reaction list pointed to by the defect *right pointer in Figure 3. Update, including the following possible operate:

更新反应速率:找到相应的反应,并更新其反应速率;Update reaction rate: find the corresponding reaction and update its reaction rate;

删除反应:删除反应的操作同图6中删除缺陷的操作;Delete reaction: The operation of deleting the reaction is the same as the operation of deleting the defect in Figure 6;

插入反应:删除反应的操作同图7中插入缺陷的操作;Insertion reaction: The operation of deletion reaction is the same as the operation of inserting defects in Figure 7;

若查找到的缺陷数量小于等于1,则从Defect-Reaction List中删除该缺陷及相关的反应,如图6所示,若该缺陷是可动缺陷,则同时从mobileDefectList中删除相应的缺陷。If the number of defects found is less than or equal to 1, delete the defect and related reactions from the Defect-Reaction List, as shown in Figure 6, if the defect is a movable defect, delete the corresponding defect from the mobileDefectList at the same time.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,所述从Defect-Reaction List中删除该缺陷及相关的反应包括:In the above-mentioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, the deletion of the defect and related reactions from the Defect-Reaction List includes:

若删除的缺陷为不可动缺陷,则删除缺陷后,再依次删除与之相关的反应,如图6(a)所示;If the deleted defect is an immovable defect, after deleting the defect, delete the related reactions in turn, as shown in Figure 6(a);

若删除的缺陷为可动缺陷,则删除缺陷及与之相关的反应后,遍历其他缺陷,删除每个缺陷的反应链表中与该可动缺陷相关的Clustering反应,如图6(b)所示。If the deleted defect is a movable defect, after deleting the defect and its related reactions, traverse other defects, and delete the Clustering reaction related to the movable defect in the reaction list of each defect, as shown in Figure 6(b) .

本实施例中,图6是“删除缺陷”及更新相关反应的示意图。其中,实现箭头表示指针指向,点划线表示新插入的缺陷和反应,小“×”表示断开该指针的指向,大“×”表示删除该缺陷/反应。In this embodiment, FIG. 6 is a schematic diagram of a “deletion defect” and an update related reaction. Among them, the realization arrow indicates the pointer pointing, the dot-dash line indicates the newly inserted defect and reaction, the small "×" indicates that the pointing of the pointer is disconnected, and the large "×" indicates the deletion of the defect/reaction.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,所述针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作包括:In the aforementioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, for the selected reaction, traverse each product to find out whether there is a defect of the same type as the product in the Defect-Reaction List , and perform corresponding operations according to the search results, including:

针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷;For the selected reaction, traverse each product to find out whether there are defects of the same type as the product type in the Defect-Reaction List;

若存在,则该缺陷数量加1,并更新与该缺陷相关的反应及反应速率;If it exists, add 1 to the number of defects, and update the reaction and reaction rate related to the defect;

否则,则向Defect-Reaction List中插入该缺陷及相关的反应。Otherwise, insert the defect and related reactions into the Defect-Reaction List.

本实施例中,针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,若存在,则更新缺陷及相关反应,具体步骤如下:In this embodiment, for the selected reaction, traverse each product to find out whether there is a defect of the same type as the product in the Defect-Reaction List, and if so, update the defect and related reactions. The specific steps are as follows:

B1.该缺陷数量加1,若该缺陷是可动缺陷,则同时将mobileDefectList中相应的缺陷数量加1;B1. Add 1 to the number of defects. If the defect is a movable defect, add 1 to the corresponding number of defects in the mobileDefectList at the same time;

B2.依次更新与之相关的Dissociation、sinkRemovel、Diffusion、Clustering反应的反应速率,根据反应速率是否等于0,以及图3中该缺陷*right指针指向的反应链表中的反应进行更新,包括如下可能的操作:B2. Update the reaction rates of the related Dissociation, sinkRemovel, Diffusion, and Clustering reactions in turn, according to whether the reaction rate is equal to 0, and the reaction in the reaction list pointed to by the defect *right pointer in Figure 3. Update, including the following possible operate:

更新反应速率:找到相应的反应,并更新其反应速率;Update reaction rate: find the corresponding reaction and update its reaction rate;

删除反应:删除反应的操作同图6中删除缺陷的操作;Delete reaction: The operation of deleting the reaction is the same as the operation of deleting the defect in Figure 6;

插入反应:删除反应的操作同图7中差入缺陷的操作;Insertion reaction: The operation of deletion reaction is the same as the operation of differential defect in Figure 7;

否则,则向Defect-Reaction List中插入该缺陷及相关的反应,如图7所示。Otherwise, insert the defect and related reactions into the Defect-Reaction List, as shown in Figure 7.

在前述适用于多元SRSCD模拟的材料辐照缺陷存储方法的具体实施方式中,进一步地,所述向Defect-Reaction List中插入该缺陷及相关的反应包括:In the above-mentioned specific embodiment of the method for storing irradiation defects of materials suitable for multivariate SRSCD simulation, further, the inserting the defect and the related reaction into the Defect-Reaction List includes:

若插入的缺陷为不可动缺陷,则插入缺陷后,再依次插入与之相关的反应,如图7(a)所示;If the inserted defect is an immovable defect, after the defect is inserted, the related reactions are inserted in sequence, as shown in Figure 7(a);

若插入的缺陷为可动缺陷,则插入缺陷及与之相关的反应后,遍历其他缺陷,在每个缺陷的反应链表后增加与该可动缺陷相关的聚集反应,如图7(b)所示。If the inserted defect is a movable defect, after inserting the defect and its related reactions, traverse other defects, and add the aggregation reaction related to the movable defect after the reaction list of each defect, as shown in Figure 7(b) Show.

本实施例中,图7是“插入缺陷”及更新相关反应的示意图,其中,实现箭头表示指针指向,点划线表示新插入的缺陷和反应,“×”表示断开该指针的指向。In this embodiment, Fig. 7 is a schematic diagram of "insert defect" and update related reactions, wherein the realization arrow indicates the pointer pointing, the dot-dash line indicates the newly inserted defect and reaction, and "x" indicates disconnecting the pointer pointing.

本发明与现有技术相比,具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:

1)在SRSCD中,随着模拟的进行,体系中缺陷类型及反应类型是不断地动态增长的,且数量会迅速增长到百万个甚至更多。本发明的Defect-Reaction List基于链表的思想在计算机中为缺陷和反应分配不连续的空间来存储,从而实现了缺陷及反应的有效存储及新缺陷及反应快速加入,旧缺陷及反应的快速删除操作;1) In SRSCD, with the progress of the simulation, the types of defects and reaction types in the system are constantly growing dynamically, and the number will rapidly increase to one million or even more. The Defect-Reaction List of the present invention allocates discontinuous spaces for defects and reactions to be stored in the computer based on the idea of a linked list, thereby realizing effective storage of defects and reactions, rapid addition of new defects and reactions, and rapid deletion of old defects and reactions. operate;

2)在SRSCD模拟中,主要涉及五类反应,除了0阶反应,其他四类反应都与其反应物的类型密切相关,每当加入一种新缺陷类型,就需要增加与之相关的四类反应;而每当删除一种旧缺陷类型,就需要删除其参与的所有四类反应。本发明的Defect-Reaction List通过在缺陷结构体中设置指向其反应的指针的方式,来将缺陷及反应关联存储,从而能够实现上述操作的快速、准确操作。2) In the SRSCD simulation, five types of reactions are mainly involved. Except for the 0-order reaction, the other four types of reactions are closely related to the types of their reactants. Whenever a new defect type is added, it is necessary to add four types of reactions related to it. ; and every time an old defect type is removed, all four types of reactions it participates in need to be removed. The Defect-Reaction List of the present invention stores the defects and the reactions in association by setting a pointer to the reaction in the defect structure, so that the above operations can be performed quickly and accurately.

以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明所述原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。The above are the preferred embodiments of the present invention. It should be pointed out that for those skilled in the art, without departing from the principles of the present invention, several improvements and modifications can be made. These improvements and modifications It should also be regarded as the protection scope of the present invention.

Claims (9)

1.一种适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,包括:1. a material irradiation defect storage method applicable to multivariate SRSCD simulation, is characterized in that, comprises: 根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List,其中,SRSCD表示空间分辨随机团簇动力学,Defect-Reaction List表示缺陷-反应列表;According to the defects in the initial state of the SRSCD simulation system and the reactions that the defects can participate in, a Defect-Reaction List based on a linked list is created, where SRSCD represents spatially resolved stochastic cluster dynamics, and Defect-Reaction List represents the defect-reaction list; 从Defect-Reaction List中随机选择一个反应;Randomly select a reaction from the Defect-Reaction List; 针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作;其中,所述操作包括:更新、插入、删除;For the selected reaction, traverse each reactant, find defects of the same type as the reactant in the Defect-Reaction List, and perform corresponding operations according to the number of defects found; wherein, the operations include: update, insert, delete; 针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作。For the selected reaction, traverse each product to find out whether there are defects of the same type as the product in the Defect-Reaction List, and perform corresponding operations according to the search results. 2.根据权利要求1所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,所述根据SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List包括:2. the material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 1, is characterized in that, described according to the defect that SRSCD simulation system initial state and the reaction that the defect can participate in, create the Defect- The Reaction List includes: 构造用于存储缺陷链表头节点的结构体defectHead、存储缺陷的结构体defect和存储反应的结构体reaction;Construct the structure defectHead for storing the head node of the defect list, the structure defect for storing the defect, and the structure reaction for storing the reaction; 根据构造的结构体defectHead、defect、reaction及SRSCD模拟体系初始状态下的缺陷及缺陷可参与的反应,创建基于链表的Defect-Reaction List。According to the constructed structures defectHead, defect, reaction and SRSCD to simulate the defects in the initial state of the system and the reactions that the defects can participate in, a linked list-based Defect-Reaction List is created. 3.根据权利要求2所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,结构体defectHead中的成员包括:cell和*defectList,其中,cell表示体积元编号,*defectList表示指向缺陷的指针;3. the material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 2, is characterized in that, the member in the structural body defectHead comprises: cell and *defectList, wherein, cell represents volume element number, *defectList represents a pointer to the defect; 结构体defect中的成员包括:defectType、num、isMobile、*down和*right;其中,defectType表示缺陷类型,num表示类型defectType的缺陷的数量,isMobile用于标识该缺陷是否是可动缺陷,*down表示指向下一个缺陷的指针,*right表示指向反应的指针;The members in the structure defect include: defectType, num, isMobile, *down and *right; among them, defectType represents the defect type, num represents the number of defects of type defectType, isMobile is used to identify whether the defect is a movable defect, *down Represents the pointer to the next defect, *right represents the pointer to the reaction; 结构体reaction中的成员包括:type、numReactions、numProducts、reactions、products、cell、taskid、reactionRate和*right;其中,type用于标识反应的类型,numReactions为反应的个数,numProducts为反应物的个数,reactions为反应的类型,products为产物的类型,cell为产物所在的体积元编号,taskid为产物所在的进程编号,reactionRate为反应的反应速率,*right表示指向下一个反应的指针。The members in the structure reaction include: type, numReactions, numProducts, reactions, products, cell, taskid, reactionRate, and *right; among them, type is used to identify the type of reaction, numReactions is the number of reactions, and numProducts is the number of reactants. number, reactions is the type of reaction, products is the type of product, cell is the volume element number where the product is located, taskid is the process number where the product is located, reactionRate is the reaction rate of the reaction, and *right represents the pointer to the next reaction. 4.根据权利要求1所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,创建的Defect-Reaction List一共三个维度,其中,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”的数量;4. The method for storing material irradiation defects suitable for multivariate SRSCD simulation according to claim 1, wherein the created Defect-Reaction List has three dimensions in total, wherein the first dimension is a two-dimensional type of defectHead The array is the head node of the defect linked list, the number of behavior volume elements in the two-dimensional array, and the number of columns as "layers"; 第二个维度为类型为defect的链表,用于存储对应体积元中的所有缺陷,根据缺陷的类型将缺陷按“层”存储;The second dimension is a linked list of type defect, which is used to store all defects in the corresponding volume element, and store defects in "layers" according to the type of defects; 第三个维度为类型为reaction的链表,用于存储体积元中每个缺陷相关的反应。The third dimension is a linked list of type reaction, which is used to store the reactions related to each defect in the volume element. 5.根据权利要求1所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,在从Defect-Reaction List中随机选择一个反应之前,所述方法还包括:5. The material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 1, characterized in that, before randomly selecting a reaction from the Defect-Reaction List, the method further comprises: 为可动缺陷创建可动缺陷列表mobileDefectList,用于存储可动缺陷;Create a movable defect list mobileDefectList for movable defects to store movable defects; 其中,可动缺陷列表mobileDefectList共2个维度,第一个维度为类型为defectHead的二维数组,是缺陷链表的头节点,二维数组中的行为体积元数量、列为“层”的数量;Among them, the movable defect list mobileDefectList has a total of 2 dimensions, the first dimension is a two-dimensional array of type defectHead, which is the head node of the defect list, the number of behavior volume elements in the two-dimensional array, and the number of columns listed as "layers"; 第二个维度为类型为defect的链表,用于存储对应体积元中的所有可动缺陷,根据缺陷的类型将缺陷按“层”存储;The second dimension is a linked list of type defect, which is used to store all movable defects in the corresponding volume element, and the defects are stored in "layers" according to the type of defects; 并将每个缺陷的*right指针的指向设置为空,用于更新聚集反应。And set each defect's *right pointer to null to update the aggregated reaction. 6.根据权利要求1所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,所述针对选择的反应,遍历每一个反应物,查找Defect-Reaction List中类型与反应物类型一样的缺陷,根据查找到的缺陷数量执行相应的操作包括:6. The material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 1, characterized in that, for the selected reaction, traverse each reactant, look up the type and the reactant type in the Defect-Reaction List For the same defects, the corresponding operations performed according to the number of defects found include: 针对选择的反应,遍历每一个反应物,根据反应物的类型在Defect-Reaction List中查找同类型的缺陷,判断查找到的缺陷数量是否大于1;For the selected reaction, traverse each reactant, find the same type of defects in the Defect-Reaction List according to the type of the reactant, and judge whether the number of defects found is greater than 1; 若大于1,则该缺陷数量减1,并更新与该缺陷相关的反应及反应速率;If it is greater than 1, the number of defects is reduced by 1, and the reaction and reaction rate related to the defect are updated; 否则,则从Defect-Reaction List中删除该缺陷及相关的反应。Otherwise, the defect and associated reactions are removed from the Defect-Reaction List. 7.根据权利要求6所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,所述从Defect-Reaction List中删除该缺陷及相关的反应包括:7. The method for storing material irradiation defects suitable for multivariate SRSCD simulation according to claim 6, wherein the deletion of the defect and the relevant reaction from the Defect-Reaction List comprises: 若删除的缺陷为不可动缺陷,则删除缺陷后,再依次删除与之相关的反应;If the deleted defect is an immovable defect, after deleting the defect, delete the related reactions in turn; 若删除的缺陷为可动缺陷,则删除缺陷及与之相关的反应后,遍历其他缺陷,删除每个缺陷的反应链表中与该可动缺陷相关的聚集反应。If the deleted defect is a movable defect, after deleting the defect and its related reactions, traverse other defects, and delete the aggregation reaction related to the movable defect in the reaction list of each defect. 8.根据权利要求1所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,所述针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷,根据查找结果执行相应的操作包括:8. The material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 1, characterized in that, for the selected reaction, traverse each product to find out whether there is a type and a product type in the Defect-Reaction List For the same defect, the corresponding operations performed according to the search results include: 针对选择的反应,遍历每一个产物,查找Defect-Reaction List中是否存在类型与产物类型一样的缺陷;For the selected reaction, traverse each product to find out whether there are defects of the same type as the product type in the Defect-Reaction List; 若存在,则该缺陷数量加1,并更新与该缺陷相关的反应及反应速率;If it exists, add 1 to the number of defects, and update the reaction and reaction rate related to the defect; 否则,则向Defect-Reaction List中插入该缺陷及相关的反应。Otherwise, insert the defect and related reactions into the Defect-Reaction List. 9.根据权利要求8所述的适用于多元SRSCD模拟的材料辐照缺陷存储方法,其特征在于,所述向Defect-Reaction List中插入该缺陷及相关的反应包括:9. The material irradiation defect storage method suitable for multivariate SRSCD simulation according to claim 8, wherein the inserting the defect and the relevant reaction into the Defect-Reaction List comprises: 若插入的缺陷为不可动缺陷,则插入缺陷后,再依次插入与之相关的反应;If the inserted defect is an immovable defect, after the defect is inserted, the related reactions are inserted in sequence; 若插入的缺陷为可动缺陷,则插入缺陷及与之相关的反应后,遍历其他缺陷,在每个缺陷的反应链表后增加与该可动缺陷相关的聚集反应。If the inserted defect is a movable defect, after the defect and its related reactions are inserted, other defects are traversed, and the aggregation reaction related to the movable defect is added after the reaction list of each defect.
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AARON Y. DUNN 等: "Spatially resolved stochastic cluster dynamics for radiation damage evolution in nanostructured metals", JOURNAL OF NUCLEAR MATERIALS *

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112926205A (en) * 2021-02-24 2021-06-08 中国核动力研究设计院 Zirconium-based alloy irradiation damage simulation method and model system based on cluster dynamics

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