CN111681619B - Double-sided display device and driving method thereof - Google Patents
Double-sided display device and driving method thereof Download PDFInfo
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- CN111681619B CN111681619B CN202010617651.0A CN202010617651A CN111681619B CN 111681619 B CN111681619 B CN 111681619B CN 202010617651 A CN202010617651 A CN 202010617651A CN 111681619 B CN111681619 B CN 111681619B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3433—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices
- G09G3/344—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using light modulating elements actuated by an electric field and being other than liquid crystal devices and electrochromic devices based on particles moving in a fluid or in a gas, e.g. electrophoretic devices
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/02—Details of power systems and of start or stop of display operation
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Abstract
The invention discloses a double-sided display device and a driving method thereof, relating to the technical field of display; the driving method of the display stage comprises the following steps: in a first display state, the gate line transmits a driving voltage to turn on the first transistor, the absolute value of the difference between the voltages input by the data line and the first power voltage end is greater than the threshold voltage of the electrophoretic light-emitting structure, and the absolute value of the difference between the voltages input by the second power voltage end and the first power voltage end is less than the threshold voltage of the light-emitting element; in the second display state, different from the first display state, the absolute value of the difference between the voltages input from the second power supply voltage terminal and the first power supply voltage terminal is greater than the threshold voltage of the light emitting element; in the third display state, different from the first display state, an absolute value of a difference between voltages input from the data line and the first power voltage terminal is smaller than a threshold voltage of the electrophoretic light emitting structure, and an absolute value of a difference between voltages input from the second power voltage terminal and the first power voltage terminal is larger than the threshold voltage of the light emitting element.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to a dual-sided display device and a driving method thereof.
Background
In the prior art, after an array layer is manufactured, a conventional Mini-LED or Micro-LED and the like are used for processing an LED lamp on the array layer in a mass transfer mode to realize independent display, but the mass transfer of the processed LED after the array layer is manufactured is difficult, and the good yield is low. Or, in the prior art, the LED is used as the backlight, the planarization layer covers the upper layer of the LED, and the other film layers are sequentially manufactured on the side, away from the LED, of the planarization layer, wherein the LED used as the backlight is in a normally-on state, and has high power consumption and low contrast. In addition, the display device provided in the prior art can only realize single-sided display generally, and the application range thereof is limited, so that the invention of the display device capable of realizing double-sided display has the advantages of high yield, low power consumption and the like.
Disclosure of Invention
In view of the above, the present invention provides a dual-sided display device and a driving method thereof, so as to solve the problems of the prior art that the display device can only realize single-sided display, and has high power consumption and low yield.
In a first aspect, the present application provides a driving method for a dual-sided display device, where the display device includes a first display function layer and a second display function layer that are disposed opposite to each other, the first display function layer includes at least one electrophoretic light emitting structure, and the second display function layer includes a plurality of light emitting elements; wherein, the orthographic projection of the light-emitting element on the light-emitting surface of the display device is at least partially overlapped with the orthographic projection of the electrophoretic light-emitting structure on the light-emitting surface of the display device; the display device further comprises a driving circuit for controlling the electrophoretic light emitting structure and the light emitting elements, wherein at least one of the light emitting elements corresponds to one of the driving circuits;
any one of the driving circuits comprises a first transistor, a driving transistor and a first capacitor, wherein a gate electrode of the first transistor is electrically connected with a gate line, a first electrode of the first transistor is electrically connected with a data line, and a second electrode of the first transistor is electrically connected with a first electrode plate of the electrophoretic light-emitting structure, a gate electrode of the driving transistor and a first electrode plate of the first capacitor; the second electrode plate of the electrophoresis light-emitting structure is electrically connected with a first power voltage end; the second electrode plate of the first capacitor and the first electrode of the driving transistor are electrically connected with a second power supply voltage end, the second electrode of the driving transistor is electrically connected with the first end of the light-emitting element, and the second end of the light-emitting element is electrically connected with the first power supply voltage end;
the driving method comprises a reset phase and a display phase, and the driving method of the display phase comprises the following steps:
in a first display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is less than the threshold voltage of the light emitting element, and the electrophoretic light emitting structure displays a picture;
in a second display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the light emitting element, and the electrophoretic light emitting structure and the light emitting element display a picture together;
in a third display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is smaller than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is larger than the threshold voltage of the light emitting element, and the light emitting element displays a picture.
In a second aspect, the present application provides a dual-sided display device, where the display device includes a first display function layer and a second display function layer that are disposed opposite to each other, the first display function layer includes at least one electrophoretic light emitting structure, and the second display function layer includes a plurality of light emitting elements; wherein, the orthographic projection of the light-emitting element on the light-emitting surface of the display device is at least partially overlapped with the orthographic projection of the electrophoretic light-emitting structure on the light-emitting surface of the display device; the display device further comprises a driving circuit for controlling the electrophoretic light-emitting structure and the light-emitting elements, wherein at least one light-emitting element corresponds to one driving circuit, the driving circuit is arranged on a driving circuit layer, and the driving circuit layer is arranged between the first display function layer and the second display function layer; the driving circuit layer comprises a plurality of first transistors, a plurality of driving transistors and a plurality of first capacitors.
Compared with the prior art, the double-sided display device and the driving method thereof provided by the invention at least realize the following beneficial effects:
the application provides a display device comprising a first display function layer and a second display function layer which are oppositely arranged, wherein the first display function layer comprises an electrophoresis light-emitting structure, and the second display function layer comprises a light-emitting element, so that the function of double-sided display is realized. In addition, the display condition that only the electrophoresis light-emitting structure displays the picture, or the electrophoresis light-emitting structure and the light-emitting element display the picture together, or only the light-emitting element displays the picture is realized by regulating and controlling the input voltage of each end of the driving circuit electrically connected with the first display function layer and the second display function layer in the display stage; the condition that the double-sided display device is always in double-sided display is avoided, the power consumption of the double-sided display device is reduced, different display effects can be realized through the regulation and control of voltage, and the display range and the display effect of the double-sided display device are improved; in addition, the first display function layer and the second display function layer are oppositely arranged, so that the basic manufacturing processes of the two display function layers are not interfered with each other, and the improvement of the good yield of the double-sided display device is facilitated.
Of course, it is not necessary for any product in which the present invention is practiced to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic diagram of a dual-sided display device according to an embodiment of the present disclosure;
FIG. 2 is an AA' cross-sectional view of FIG. 1 provided in accordance with an embodiment of the present application;
fig. 3 is a structural diagram of a driving circuit corresponding to the dual-sided display device provided in the embodiment of the present application;
fig. 4 is a flowchart illustrating a driving method for a display stage of a dual-sided display device according to an embodiment of the present disclosure;
fig. 5 is a flowchart illustrating a driving method for a reset phase of a dual-sided display device according to an embodiment of the present disclosure;
fig. 6 is a timing chart illustrating an operation of the dual-sided display device according to the embodiment of the present disclosure;
fig. 7 is a timing chart illustrating another operation of the dual-sided display device according to the embodiment of the present application;
FIG. 8 is another cross-sectional view AA' of FIG. 1, as provided in accordance with an embodiment of the present application;
fig. 9 is a schematic view illustrating an electrophoretic light emitting structure according to an embodiment of the disclosure.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of the components and steps, the numerical expressions and numerical values set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
In the prior art, a display device is manufactured with low yield and large power consumption, generally can only realize single-sided display, and has a limited application range, so that a display device capable of realizing double-sided display has the advantages of high yield, low power consumption and the like.
In view of the above, the present invention provides a dual-sided display device and a driving method thereof, so as to solve the problems of the prior art that the display device can only realize single-sided display, and has high power consumption and low yield.
Fig. 1 is a schematic diagram of a dual-sided display device according to an embodiment of the present disclosure, fig. 2 is an AA' cross-sectional diagram of fig. 1 according to an embodiment of the present disclosure, fig. 3 is a structural diagram of a driving circuit corresponding to the dual-sided display device according to an embodiment of the present disclosure, and fig. 4 is a flowchart of a driving method of a display stage of the dual-sided display device according to an embodiment of the present disclosure; referring to fig. 1 to 4, the present application provides a driving method of a dual-sided display device 100, the display device 100 includes a first display function layer 10 and a second display function layer 20, which are oppositely disposed, the first display function layer 10 includes at least one electrophoretic light emitting structure 11, and the second display function layer 20 includes a plurality of light emitting elements 21; taking the light emitting surface of the electrophoretic light emitting structure 11 as a first light emitting surface, wherein an orthogonal projection of the light emitting element 21 on the first light emitting surface of the display device 100 at least partially overlaps with an orthogonal projection of the electrophoretic light emitting structure 11 on the first light emitting surface of the display device 100; the display device 100 further comprises a driving circuit 31 for controlling the electrophoretic light emitting structure 11 and the light emitting elements 21, wherein at least one light emitting element 21 corresponds to one driving circuit 31;
any one of the driving circuits 31 includes a first transistor 32, a driving transistor 33 and a first capacitor 34, wherein a gate electrode 323 of the first transistor 32 is electrically connected to the gate line 1, a first electrode 321 of the first transistor 32 is electrically connected to the data line 2, and a second electrode 322 of the first transistor 32 is electrically connected to the first electrode plate 111 of the electrophoretic light emitting structure 11, the gate electrode 333 of the driving transistor 33 and the first electrode plate 341 of the first capacitor 34; the second electrode plate 112 of the electrophoretic light emitting structure 11 is electrically connected to a first power voltage terminal VSS; the second plate 342 of the first capacitor 34 and the first electrode 331 of the driving transistor 33 are electrically connected to the second power voltage terminal VDD, the second electrode 332 of the driving transistor 33 is electrically connected to the first terminal 211 of the light emitting device 21, and the second terminal 212 of the light emitting device 21 is electrically connected to the first power voltage terminal VSS;
the driving method comprises a reset phase and a display phase, and the driving method of the display phase comprises the following steps:
step S1: in the first display state, the gate line 1 transmits a driving voltage to turn on the first transistor 32, the absolute value of the difference between the voltage input by the data line 2 and the voltage input by the first power voltage terminal VSS is greater than the threshold voltage of the electrophoretic light emitting structure 11, the absolute value of the difference between the voltage input by the second power voltage terminal VDD and the voltage input by the first power voltage terminal VSS is less than the threshold voltage of the light emitting element 21, and the electrophoretic light emitting structure 11 displays a picture;
step S2: in the second display state, the gate line 1 transmits a driving voltage to turn on the first transistor 32, the absolute value of the difference between the voltage input by the data line 2 and the voltage input by the first power voltage terminal VSS is greater than the threshold voltage of the electrophoretic light emitting structure 11, the absolute value of the difference between the voltage input by the second power voltage terminal VDD and the voltage input by the first power voltage terminal VSS is greater than the threshold voltage of the light emitting element 21, and the electrophoretic light emitting structure 11 and the light emitting element 21 display a picture together;
step S3: in the third display state, the gate line 1 transmits the driving voltage to turn on the first transistor 32, the absolute value of the difference between the voltage input from the data line 2 and the voltage input from the first power voltage terminal VSS is smaller than the threshold voltage of the electrophoretic light emitting structure 11, the absolute value of the difference between the voltage input from the second power voltage terminal VDD and the voltage input from the first power voltage terminal VSS is larger than the threshold voltage of the light emitting element 21, and the light emitting element 21 displays the image.
Specifically, the present application provides a dual-sided display device 100, the dual-sided display device 100 includes a first display functional layer 10 and a second display functional layer 20 disposed oppositely, wherein a light emitting direction of the first display functional layer 10 is opposite to a light emitting direction of the second display functional layer 20, for example, the light emitting direction of the first display functional layer 10 is upward and the light emitting direction of the second display functional layer 20 is downward as shown in fig. 2.
The first display functional layer 10 provided by the present application may include at least one electrophoretic light emitting structure 11, for example, the whole first display functional layer 10 is formed by only one large-area electrophoretic light emitting structure 11, or the whole first display functional layer 10 is formed by a plurality of sub-electrophoretic light emitting structures with smaller areas. If one first display functional layer 10 includes at least two sub-electrophoretic light emitting structures, it should be noted that, in the present application, the size of the area of any sub-electrophoretic light emitting structure is not specifically limited, and the areas and the shapes of a plurality of sub-electrophoretic light emitting structures included in any first display functional layer 10 may be made the same, which is beneficial to simplifying the manufacturing process of the first display functional layer 10, and the areas and the shapes of the sub-electrophoretic light emitting structures may also be set to be different; as long as the first display function layer 10 can realize a normal light extraction effect in the display stage of the dual-sided display device 100.
The second display functional layer 20 provided in the present application may include a plurality of light emitting elements 21, wherein the plurality of light emitting elements 21 may be arranged in an array, and the arrangement positions of the light emitting elements 21 may also be adjusted according to the requirement, and the arrangement state of the light emitting elements 21 in the second display functional layer 20 is not specifically limited in the present application.
It should be noted that, taking the light emitting surface of the electrophoretic light emitting structure 11 as the first light emitting surface, the orthographic projection of the light emitting element 21 arranged in the second display functional layer 20 on the first light emitting surface of the display device 100 at least partially overlaps the orthographic projection of the electrophoretic light emitting structure 11 in the first display functional layer 10 on the first light emitting surface of the display device 100; the dual-sided display device 100 further includes a driving circuit 31 for controlling the electrophoretic light emitting structure 11 and the light emitting elements 21, wherein at least one of the light emitting elements 21 corresponds to one of the driving circuits 31, and the driving circuit 31 can be disposed in the driving circuit layer 30, please refer to fig. 2, and the driving circuit layer 30 is disposed between the first display function layer 10 and the second display function layer 20.
Any of the driving circuits 31 provided herein for driving the electrophoretic light emitting structure 11 and/or the light emitting element 21 may include a first transistor 32, a driving transistor 33, and a first capacitor 34; referring to fig. 3, a gate electrode 323 of the first transistor 32 is electrically connected to the gate line 1, a second electrode 322 of the first transistor 32 is electrically connected to the first electrode plate 111 of the electrophoretic light emitting structure 11, the gate electrode 333 of the driving transistor 33, and the first electrode plate 341 of the first capacitor 34, and the second electrode plate 112 of the electrophoretic light emitting structure 11 is electrically connected to the first power voltage terminal VSS; the second plate 342 of the first capacitor 34 and the first electrode 331 of the driving transistor 33 are electrically connected to the second power voltage terminal VDD, the second electrode 332 of the driving transistor 33 is electrically connected to the first terminal 211 of the light emitting device 21, and the second terminal 212 of the light emitting device 21 is electrically connected to the first power voltage terminal VSS.
The driving method for driving the display device 100 of the present application includes a reset phase and a display phase, wherein, referring to fig. 4, the driving method of the display phase at least includes the following three steps:
step S1 is a driving method when the dual-sided display device 100 is in the first display state, specifically: transmitting a driving voltage to the first transistor 32 in the driving circuit 31 through the gate line 1 to turn on the first transistor 32; controlling an absolute value of a difference between a voltage input through the data line 2 and a voltage input through the first power voltage terminal VSS to be greater than a threshold voltage of the electrophoretic light emitting structure 11 so that the electrophoretic light emitting element 21 can emit light; controlling the absolute value of the difference between the voltage input from the second power voltage terminal VDD and the voltage input from the first power voltage terminal VSS to be less than the threshold voltage of the light emitting element 21, so that the light emitting element 21 is in an off state; at this time, the dual-sided display device 100 only uses the electrophoretic light emitting structure 11 for displaying a picture, that is, only the first display functional layer 10 in the display device 100 is in a display state. That is, the present application can control the display device 100 to realize the mode in which only the first display functional layer 10 displays a picture by controlling the magnitude of the voltage signal at each end of the input driving circuit 31, thereby avoiding the problem of excessive power consumption caused by the second display functional layer 20 also emitting light.
Step S2 is a driving method when the dual-sided display device 100 is in the second display state, specifically: transmitting a driving voltage to the first transistor 32 in the driving circuit 31 through the gate line 1 to turn on the first transistor 32; controlling an absolute value of a difference between a voltage input through the data line 2 and a voltage input through the first power voltage terminal VSS to be greater than a threshold voltage of the electrophoretic light emitting structure 11 so that the electrophoretic light emitting element 21 can emit light; controlling the absolute value of the difference between the voltage input from the second power voltage terminal VDD and the voltage input from the first power voltage terminal VSS to be greater than the threshold voltage of the light emitting element 21, so that the light emitting element 21 can be in the display state; at this time, the electrophoretic light emitting structure 11 and the plurality of light emitting elements 21 in the dual-sided display device 100 are both used for displaying pictures, that is, the first display function layer 10 and the second display function layer 20 in the display device 100 are in a display state. That is, the present application can control the dual-sided display device 100 to implement the dual-sided display mode by controlling the magnitude of the voltage signal at each end of the input driving circuit 31, so as to meet the display requirements of different display states.
Step S3 is a driving method when the dual-sided display device 100 is in the third display state, specifically: transmitting a driving voltage to the first transistor 32 in the driving circuit 31 through the gate line 1 to turn on the first transistor 32; controlling an absolute value of a difference between a voltage input through the data line 2 and a voltage input through the first power voltage terminal VSS to be less than a threshold voltage of the electrophoretic light emitting structure 11 so that the electrophoretic light emitting element 21 is in a non-light emitting state; controlling the absolute value of the difference between the voltage input from the second power voltage terminal VDD and the voltage input from the first power voltage terminal VSS to be greater than the threshold voltage of the light emitting element 21, so that the light emitting element 21 can be in a display state; at this time, the dual-sided display device 100 uses only the light emitting element 21 to display a screen, that is, only the second display functional layer 20 in the display device 100 is in a display state. That is, the present application can control the display device 100 to realize the mode in which only the second display functional layer 20 displays a picture by controlling the magnitude of the voltage signal at each end of the input driving circuit 31, thereby avoiding the problem of excessive power consumption caused by the first display functional layer 10 emitting light as well.
Therefore, in the present application, by controlling the input voltage signal at each end of the driving circuit 31, it is possible to display a picture only on the first display functional layer 10 or only on the second display functional layer 20, and it is possible to keep both the first display functional layer 10 and the second display functional layer 20 in a display state; therefore, different display states of the double-sided display device 100 under different requirements are realized, and the problem of overlarge power consumption of the display device 100 is avoided.
Wherein, the luminance of the light emitting device 21 can be controlled by controlling the current flowing through the light emitting device 21; in the controllable range, when the current is larger, the light emission luminance of the light emitting element 21 is higher; as the current is smaller, the light emission luminance of the light emitting element 21 is lower.
Referring to fig. 3, optionally, when the driving transistors 33 are all N-type transistors, in the display phase, after the gate line 1 transmits the driving voltage to turn on the first transistor 32, the data line 2 inputs a positive voltage, and the driving transistor 33 is turned on;
when the driving transistors 33 are all P-type transistors, in the display period, after the gate line 1 transmits the driving voltage to turn on the first transistor 32, the data line 2 inputs a negative voltage, and the driving transistor 33 is turned on.
Specifically, when the driving transistor 33 in the driving circuit 31 is an N-type transistor, in the display stage of the display device 100, after the gate line 1 transmits the driving voltage to turn on the first transistor 32, a positive voltage signal (e.g., a high level signal) is input to the driving circuit 31 through the data line 2, thereby controlling the driving transistor 33 to be turned on, so that a voltage signal transmitted from the second power voltage terminal VDD can be transmitted to one terminal (211) of the light emitting element 21 through the driving transistor 33, thereby controlling the light emitting element 21 to be turned on and off in combination with the magnitude of the voltage signal from the first power voltage terminal VSS.
When the driving transistors 33 in the driving circuit 31 are all P-type transistors, in the display stage of the display device 100, after the gate line 1 transmits the driving voltage to turn on the first transistor 32, a negative voltage signal (e.g., a low level signal) is input to the driving circuit 31 through the data line 2, so as to control the driving transistor 33 to turn on, so that the voltage signal transmitted by the second power voltage terminal VDD can be transmitted to one terminal (211) of the light emitting element 21 through the driving transistor 33, thereby controlling the light emitting element 21 to turn on and off in combination with the voltage signal magnitude of the first power voltage terminal VSS.
Fig. 5 is a flowchart illustrating a driving method of a reset phase of a dual-sided display device according to an embodiment of the present application, referring to fig. 3 and 5, optionally, the driving method of the reset phase includes:
Specifically, the driving method of the dual-sided display device 100 provided by the present application further includes a driving method in a reset phase, and specifically includes the following steps:
when the driving transistor 33 is an N-type transistor, in the case 101, after the driving voltage is transmitted to the first transistor 32 through the gate line 1 and the first transistor 32 is turned on, the control data line 2 inputs a negative voltage signal, and at this time, the driving transistor 33 cannot be turned on, i.e., the step 101 is considered as a reset operation.
When the driving transistor 33 is a P-type transistor, in the case 102, after the driving voltage is transmitted to the first transistor 32 through the gate line 1 and the first transistor 32 is turned on, the positive voltage signal is input to the control data line 2, and at this time, the driving transistor 33 cannot be turned on, i.e., the step 102 is considered as a reset operation.
Referring to fig. 3, optionally, when the driving transistor 33 is an N-type transistor, the first end 211 of the light emitting device 21 is a positive electrode, and the second end 212 of the light emitting device 21 is a negative electrode;
when the driving transistor 33 is a P-type transistor, the first terminal 211 of the light emitting element 21 is a negative electrode, and the second terminal 212 of the light emitting element 21 is a positive electrode.
Specifically, when the driving transistor 33 is an N-type transistor, the first terminal 211 of the light emitting element 21 shown in fig. 3 is a positive electrode, and the second terminal 212 is a negative electrode, so as to ensure that the light emitting element 21 can be normally driven for displaying a picture.
When the driving transistor 33 is a P-type transistor, the first terminal 211 of the light emitting element 21 shown in fig. 3 is a negative electrode, and the second terminal 212 is a positive electrode, so as to ensure that the light emitting element 21 can be normally driven for displaying pictures.
Fig. 6 is a timing diagram illustrating an operation of a dual-sided display device according to an embodiment of the present disclosure, fig. 7 is a timing diagram illustrating another operation of the dual-sided display device according to the embodiment of the present disclosure, please refer to fig. 1 to fig. 7, taking the first transistor 32 and the driving transistor 33 as N-type transistors as an example, fig. 6 provides a timing sequence for the operation of the electrophoretic light emitting structure 11 and the light emitting element 21:
in the reset phase of the display device 100: the gate line 1 and the data line 2 both input a low level signal, and a low level signal is also received at the node B in the driving circuit 31, and a high level signal is input to the second power voltage terminal VDD, and a low level signal is input to the first power voltage terminal VSS. In other embodiments of the present invention, the gate line 1 may input a high-level signal, the data line 2 may input a low-level signal, and the low-level signal of the data line 2 pulls the voltage of the node B low. In this embodiment, the low level signal of the node B may be-15V, the low level signal of the first power voltage terminal VSS may be 0V, and the voltage difference between the two sides of the electrophoretic light emitting structure 11 enables the electrophoretic film to display a white frame (in this embodiment, the white frame represents an undisplayed state, and the black frame represents a displayed state). The voltage at the node B is not sufficient to turn on the driving transistor 33 and the light emitting element 21 does not operate.
In the first display state of the display device 100 (only the electrophoretic light emitting structure 11 displays a picture), the gate line 1 inputs a high level signal to turn on the first transistor 32, the data line 2 inputs a high level signal, and at this time, the node B in the driving circuit 31 also receives a high level signal, the node B inputs a low level signal to the second power voltage terminal VDD, and the node B inputs a 0V level signal to the first power voltage terminal VSS. In this embodiment, the high level signal inputted to the data line 2 may be 15V, and the voltage of the node B is also 15V at this time. At this time, the voltage input to the first power voltage terminal VSS on the other side of the electrophoretic light emitting structure 11 is 0V, and thus, the voltage difference between the two sides of the electrophoretic light emitting structure 11 is 15V, so that the electrophoretic film displays a black image. Of course, this is illustrated by taking a pixel needing to display information as an example, when the pixel does not need to update information, the data line of the pixel is still the low-level signal line, and the electrophoretic light-emitting structure still maintains a white picture. At this time, the node B is a high level signal, the driving transistor is in an on state, and the low level signal inputted from the second power voltage terminal VDD may be-5V, which is lower than the 0V level signal inputted from the first power voltage terminal VSS, so that the light emitting element 21 is not shown.
In the second display state of the display device 100 (the electrophoretic light emitting structure 11 and the light emitting element 21 together display a picture), the gate line 1 still continuously inputs the high level signal to turn on the first transistor 32, the data line 2 still continuously inputs the high level signal, the high level signal is input to the second power voltage terminal VDD, and the level signal of 0V is input to the first power voltage terminal VSS. In this embodiment, the high level signal inputted to the data line 2 may be 15V, and the voltage of the node B is also 15V at this time. At this time, the voltage input from the first power voltage terminal VSS on the other side of the electrophoretic light emitting structure 11 is 0V, and thus the voltage difference between the two sides of the electrophoretic light emitting structure 11 is 15V, and thus the voltage difference between the two sides of the electrophoretic light emitting structure 11 causes the electrophoretic film to display a black frame. Of course, this is illustrated by taking a pixel needing to display information as an example, when the pixel does not need to update information, the data line of the pixel is still the low-level signal line, and the electrophoretic light-emitting structure still maintains a white picture. At this time, the node B is a high level signal, the driving transistor is in an on state, the high level signal inputted from the second power voltage terminal VDD may be 5V, which is higher than the 0V level signal inputted from the first power voltage terminal VSS, and the voltage difference between VDD and VSS is higher than the threshold voltage of the light emitting element 21, so that the light emitting element 21 is also displayed.
In the third display state of the display device 100 (only the light emitting element 21 displays a picture), the gate line 1 continues to input the high level signal to turn on the first transistor 32, the data line 2 continues to input the high level signal, the high level signal higher than the second display state is input to the second power voltage terminal VDD, and the high level signal is input to the first power voltage terminal VSS. In this embodiment, the high level signal inputted to the data line 2 may be 15V, and the voltage of the node B is also 15V at this time. At this time, the voltage input to the first power voltage terminal VSS on the other side of the electrophoretic light emitting structure 11 is 11V, and thus, the voltage difference between the two sides of the electrophoretic light emitting structure 11 is 4V, and thus, the voltage difference between the two sides of the electrophoretic light emitting structure 11 keeps the electrophoretic film in the previous frame state, i.e. no frame update is performed. At this time, the node B is a high level signal, the driving transistor is in an on state, the high level signal inputted from the second power voltage terminal VDD may be 8V, which is higher than the level signal inputted from the first power voltage terminal VSS by 11V, and the voltage difference between VDD and VSS is higher than the threshold voltage of the light emitting element 21, so that the light emitting element 21 is also displayed.
In other embodiments of the present invention, only one display state may be included, and in different display states, the different display states may be adjusted by adjusting the on/off states of the first transistor 32 and the driving transistor 33, and adjusting the voltages of the first power supply voltage terminal VSS and the second power supply voltage terminal VDD.
In other embodiments of the present application, when the driving circuit 31 of the display device 100 does not include the first capacitor 34, the timing chart for driving the display device 100 of the present application is as shown in fig. 7, and the first transistor 32 and the driving transistor 33 are both N-type transistors as an example:
in the reset phase of the display device 100: the gate line 1 and the data line 2 both input a low level signal, and a low level signal is also received at the node B in the driving circuit 31, and a high level signal is input to the second power voltage terminal VDD, and a low level signal is input to the first power voltage terminal VSS.
In the first display state of the display device 100 (only the electrophoretic light emitting structure 11 displays a picture), the gate line 1 inputs a high level signal to turn on the first transistor 32, the data line 2 inputs a high level signal, and at this time, the node B in the driving circuit 31 also receives a high level signal, the node B inputs a low level signal to the second power voltage terminal VDD, and the node B inputs a 0V level signal to the first power voltage terminal VSS.
In the second display state of the display device 100 (the electrophoretic light emitting structure 11 and the light emitting element 21 display a picture in common) in addition to the first display state, the data line 2 inputs a high level signal, inputs a high level signal to the second power supply voltage terminal VDD, and inputs a level signal of 0V to the first power supply voltage terminal VSS.
In the third display state of the display device 100 (only the light emitting element 21 displays a screen) in addition to the second display state, the data line 2 receives a low level signal, receives a high level signal higher than the second display state from the second power supply voltage terminal VDD, and receives a high level signal from the first power supply voltage terminal VSS.
It should be noted that, after a high signal is applied to the gate line 1 to turn on the first transistor 32 in the first display state of fig. 7, the high signal applied to the data line 2 is transmitted to the node B and is maintained, and then the high signal is stopped from being continuously transmitted to the gate line 1, so that no matter what voltage signal is applied to the data line 2, the voltage at the node B is not affected in the second display state and the third display state of the display device 100. That is, the portion of the data line 2 to which the high-level signal is input in the second display phase of fig. 7 may be a continuous input of the low-level signal.
It should be noted that, the timing diagrams shown in fig. 6 and fig. 7 are only for showing the level change condition in the reset phase and the different display states, the reset phase may be executed before each display state, but the execution sequence of each display state is not limited, and the duration of each display state is not limited, and the execution sequence and the duration of each display state may be flexibly adjusted according to actual requirements.
Fig. 8 is another cross-sectional view of AA' of fig. 1 provided in an embodiment of the present application, and referring to fig. 1, fig. 3 and fig. 8, based on the same inventive concept, the present application further provides a dual-sided display device 100, where the display device 100 includes a first display functional layer 10 and a second display functional layer 20 that are oppositely disposed, the first display functional layer 10 includes at least one electrophoretic light emitting structure 11, and the second display functional layer 20 includes a plurality of light emitting elements 21; wherein, the orthographic projection of the light emitting element 21 on the light emitting surface of the display device 100 is at least partially overlapped with the orthographic projection of the electrophoretic light emitting structure 11 on the light emitting surface of the display device 100; the display device 100 further comprises a driving circuit 31 for controlling the electrophoretic light emitting structure 11 and the light emitting elements 21, wherein at least one light emitting element 21 corresponds to one driving circuit 31, the driving circuit 31 is disposed on the driving circuit layer 30, and the driving circuit layer 30 is disposed between the first display function layer 10 and the second display function layer 20; the driving circuit layer 30 includes a number of first transistors 32, a number of driving transistors 33, and a number of first capacitors 34.
Specifically, the present application provides a dual-sided display device 100, where the dual-sided display device 100 includes a first display functional layer 10 and a second display functional layer 20 that are disposed opposite to each other, where a light emitting direction of the first display functional layer 10 deviates from a light emitting direction of the second display functional layer 20, for example, the light emitting direction of the first display functional layer 10 is upward, and the light emitting direction of the second display functional layer 20 is downward.
The first display functional layer 10 provided by the present application may include at least one electrophoretic light emitting structure 11, for example, the whole first display functional layer 10 is formed by only one large-area electrophoretic light emitting structure 11, or the whole first display functional layer 10 is formed by a plurality of sub-electrophoretic light emitting structures with smaller areas. If one first display functional layer 10 includes at least two sub-electrophoretic light emitting structures, it should be noted that, in the present application, the size of the area of any sub-electrophoretic light emitting structure is not specifically limited, and the areas and the shapes of a plurality of sub-electrophoretic light emitting structures included in any first display functional layer 10 may be made the same, which is beneficial to simplifying the manufacturing process of the first display functional layer 10, and the areas and the shapes of the sub-electrophoretic light emitting structures may also be different; as long as the first display function layer 10 can realize a normal light extraction effect in the display stage of the dual-sided display device 100.
The second display functional layer 20 provided in the present application may include a plurality of light emitting elements 21, wherein the plurality of light emitting elements 21 may be arranged in an array, and the arrangement positions of the light emitting elements 21 may also be adjusted according to the requirement, and the arrangement state of the light emitting elements 21 in the second display functional layer 20 is not specifically limited in the present application.
It should be noted that, in the present application, the orthographic projection of the light-emitting element 21 disposed in the second display functional layer 20 on the light-emitting surface of the display device 100 at least partially overlaps with the orthographic projection of the electrophoretic light-emitting structure 11 in the first display functional layer 10 on the light-emitting surface of the display device 100; the double-sided display device 100 further includes a driving circuit 31 for controlling the electrophoretic light emitting structure 11 and the light emitting element 21, the driving circuit 31 is disposed on the driving circuit layer 30, and the driving circuit layer 30 is disposed between the first display function layer 10 and the second display function layer 20; at least one of the light emitting elements 21 corresponds to one of the driving circuits 31.
Any driving circuit 31 for driving the electrophoretic light emitting structure 11 and/or the light emitting element 21 provided by the present application may include a plurality of first transistors 32, a plurality of driving transistors 33, and a plurality of first capacitors 34, wherein a gate electrode 323 of the first transistor 32 is electrically connected to the gate line 1, a second electrode 322 of the first transistor 32 is electrically connected to the first electrode plate 111 of the electrophoretic light emitting structure 11, the gate electrode 333 of the driving transistor 33, and the first electrode 341 of the first capacitor 34, and the second electrode plate 112 of the electrophoretic light emitting structure 11 is electrically connected to the first power voltage terminal VSS; the second plate 342 of the first capacitor 34 and the first electrode 331 of the driving transistor 33 are electrically connected to the second power voltage terminal VDD, the second electrode 332 of the driving transistor 33 is electrically connected to the first terminal 211 of the light emitting device 21, and the second terminal 212 of the light emitting device 21 is electrically connected to the first power voltage terminal VSS.
Therefore, the present application provides a dual-sided display device 100, which can display a picture only on the first display functional layer 10 or only on the second display functional layer 20, and can display both the first display functional layer 10 and the second display functional layer 20 in a display state; therefore, different display states of the double-sided display device 100 under different requirements are realized, and the problem of overlarge power consumption of the display device 100 is avoided.
Referring to fig. 3 and fig. 8, optionally, the second display function layer 20 includes a substrate 25, a light emitting layer 26 disposed on a side of the substrate 25 facing the driving circuit layer 30, and a connecting pad 27; the first display functional layer 10 includes a first electrode plate 111, and an electrophoretic particle layer 36 and a second electrode plate 112 sequentially disposed on a side of the first electrode plate 111 away from the driving circuit layer 30.
Specifically, the second display function layer 20 includes a substrate base plate 25, a light emitting layer 26 and a connection pad 27, wherein the light emitting layer 26 and the connection pad 27 are sequentially disposed on one side of the substrate base plate 25 facing the driving circuit layer 30; the first display function layer 10 includes a first electrode plate 111, an electrophoretic particle layer 36, and a second electrode plate 112, wherein the electrophoretic particle layer 36 and the second electrode plate 112 are sequentially disposed on a side of the first electrode plate 111 away from the driving circuit layer 30. The first display functional layer 10 and the second display functional layer 20 are further controlled to emit light by the driving circuit 31 provided in the driving circuit layer 30, so that different light emission states of the display device 100 are realized.
With reference to fig. 3 and fig. 8, optionally, the driving circuit layer 30 includes a gate metal layer 51, an active layer 52, a source/drain electrode layer 53 and a first electrode layer 54, wherein the first electrode layer 54 is disposed on a side of the gate metal layer 51 close to the first display function layer 10, the source/drain electrode layer 53 is disposed between the active layer 52 and the first electrode layer 54, and the active layer 52 is disposed on a side of the gate metal layer 51 close to the source/drain electrode layer 53; the connection pad 27 corresponding to any one of the light emitting elements 21 includes a first terminal connection pad 271 and a second terminal connection pad 272;
the gate metal layer 51 is provided with the gate electrode 323 of the first transistor 32 and the gate electrode 333 of the driving transistor 33; the source-drain electrode layer 53 is provided with a first pole 321 and a second pole 322 of the first transistor 32, a first pole 331 and a second pole 322 of the drive transistor 33, and several first electrical connection terminals 55;
wherein, the second electrode 322 of the first transistor 32 in one driving circuit 31 is electrically connected to the gate electrode 333 of the driving transistor 33 and is electrically connected to the first electrode plate 111 of the electrophoretic light emitting structure 11 through the first electrode layer 54, and the second electrode 332 of the driving transistor 33 is electrically connected to the light emitting layer 26 of one light emitting element 21 through the first terminal connection pad 271;
the first electrical connection terminal 55 is used for receiving a voltage signal transmitted from the first power voltage terminal VSS, and is electrically connected to the light emitting layer 26 of one of the light emitting elements 21 and the second electrode plate 112 through the second terminal connection pad 272.
Specifically, in a direction from the second display function layer 20 to the first display function layer 10, the driving circuit layer 30 includes a gate metal layer 51, an active layer 52, a source drain electrode layer 53, and a first electrode layer 54, which are sequentially provided; the driving circuit layer 30 further includes an insulating layer (not shown) for being disposed between the metal layers to prevent interference between electrical signals. In the driving circuit layer 30, the connection pads 27 corresponding to any one of the light emitting elements 21 each include a first terminal connection pad 271 and a second terminal connection pad 272.
The gate metal layer 51 may be used to provide the gate electrode 323 of the first transistor 32 and the gate electrode 333 of the driving transistor 33, and the gate electrode 323 of the first transistor 32 and the gate electrode 333 of the driving transistor 33 are fabricated in the same layer, which is beneficial to simplifying the fabrication process of the driving circuit layer 30. Source-drain electrode layer 53 may be used to provide first and second poles 321, 322 (source-drain poles) of first transistor 32, first and second poles 331, 332 (source-drain poles) of drive transistor 33, and a number of first electrical connection terminals 55; the first electrical connection terminal 55 and the source and drain electrodes of the first transistor 32 and the driving transistor 33 are provided in the same layer, which is advantageous in simplifying the manufacturing process of the driving circuit layer 30.
The second electrode 322 of the first transistor 32 in one driving circuit 31 is electrically connected to the gate electrode 333 of the driving transistor 33 and is electrically connected to the first electrode plate 111 of the electrophoretic light emitting structure 11 through the first electrode layer 54, and the second electrode 332 of the driving transistor 33 is electrically connected to the light emitting layer 26 of one light emitting element 21 through the first terminal connection pad 271. The first electrical connection terminal 55 is for receiving a voltage signal transmitted from the first power voltage terminal VSS, and the first electrical connection terminal 55 is electrically connected to the light emitting layer 26 of one of the light emitting elements 21 and the second electrode plate 112 through the second terminal connection pad 272.
The first display functional layer 10 and the second display functional layer 20 are subjected to light emission control by a driving circuit 31 provided in the driving circuit layer 30 to realize different light emission states of the display device 100.
Referring to fig. 8, optionally, the first electrode 331 of any driving transistor 33 is multiplexed as the second electrode 342 of a first capacitor 34, and the gate electrode 333 of any driving transistor 33 is multiplexed as the first electrode 341 of a first capacitor 34.
Specifically, in the film structure of the display device 100, the first electrode 331 of any driving transistor 33 can be multiplexed as the second plate 342 of one first capacitor 34, and the gate electrode 333 of any driving transistor 33 can be multiplexed as the first plate 341 of one first capacitor 34; that is, the first electrode 331 of the driving transistor 33 and the gate electrode 333 of the driving transistor 33 form a capacitor structure (the first capacitor 34), which reduces the complexity of the film structure of the display device 100 and facilitates the simplification of the manufacturing process of the driving circuit layer 30.
Optionally, the light emitting elements 21 are LEDs, Mini-LEDs or Micro-LEDs.
Specifically, the light-emitting element 21 provided in the second display functional layer 20 of the double-sided display device 100 provided in the present application may be selected from at least one of an LED, a Mini-LED, or a Micro-LED. When the Mini LED or the Micro LED is applied to a light-emitting element, the double-sided display device has the advantages of high brightness, low power consumption, high and low temperature resistance and longer service life.
Fig. 9 is a schematic view of an electrophoretic light emitting structure provided in an embodiment of the present application, and referring to fig. 3 and fig. 9, optionally, the electrophoretic particle layer 36 includes a plurality of electrophoretic particles, and the electrophoretic particles include at least a first color electrophoretic particle 91 and a second color electrophoretic particle 92.
Specifically, the electrophoretic particle layer 36 in the first display functional layer 10 of the dual-sided display device 100 provided by the present application is provided with a plurality of electrophoretic particles, where the electrophoretic particles may include at least a first-color electrophoretic particle 91 and a second-color electrophoretic particle 92; for example, as shown in fig. 9, the electrophoretic particles may include white electrophoretic particles and black electrophoretic particles, and the first display functional layer 10 in this case can only display a black-and-white picture. For example, the electrophoretic particles may also include white electrophoretic particles, black electrophoretic particles, red electrophoretic particles, green electrophoretic particles, and blue electrophoretic particles, and in this case, color display of the first display functional layer 10 may be achieved by controlling the voltage magnitude between the first electrode plate 111 and the second electrode plate 112 in the first display functional layer 10.
It should be noted that, in the present application, the number of the electrophoretic particles included in the electrophoretic particle layer 36 is not limited, and the color type of the electrophoretic particles included in the electrophoretic particle layer 36 is also not limited, so that the user can adjust the color type and the number of the electrophoretic particles according to the requirement to realize the diversified color display of the display device 100.
As can be seen from the foregoing embodiments, the dual-sided display device and the driving method thereof according to the present invention at least achieve the following advantages:
the application provides a display device comprising a first display function layer and a second display function layer which are oppositely arranged, wherein the first display function layer comprises an electrophoresis light-emitting structure, and the second display function layer comprises a light-emitting element, so that the function of double-sided display is realized. In addition, the display condition that only the electrophoresis light-emitting structure displays the picture, or the electrophoresis light-emitting structure and the light-emitting element display the picture together, or only the light-emitting element displays the picture is realized by regulating and controlling the input voltage of each end of the driving circuit electrically connected with the first display function layer and the second display function layer in the display stage; the condition that the double-sided display device is always in double-sided display is avoided, the power consumption of the double-sided display device is reduced, different display effects can be realized through the regulation and control of voltage, and the display range and the display effect of the double-sided display device are improved; in addition, the first display function layer and the second display function layer are oppositely arranged, so that the basic manufacturing processes of the two display function layers are not interfered with each other, and the improvement of the good yield of the double-sided display device is facilitated.
Although some specific embodiments of the present invention have been described in detail by way of examples, it should be understood by those skilled in the art that the above examples are for illustrative purposes only and are not intended to limit the scope of the present invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (8)
1. The driving method of the double-sided display device is characterized in that the display device comprises a first display function layer and a second display function layer which are oppositely arranged, the first display function layer comprises at least one electrophoresis light-emitting structure, and the second display function layer comprises a plurality of light-emitting elements; wherein, the orthographic projection of the light-emitting element on the light-emitting surface of the display device is at least partially overlapped with the orthographic projection of the electrophoretic light-emitting structure on the light-emitting surface of the display device; the display device further comprises a driving circuit for controlling the electrophoretic light emitting structure and the light emitting elements, wherein at least one of the light emitting elements corresponds to one of the driving circuits;
any one of the driving circuits comprises a first transistor, a driving transistor and a first capacitor, wherein a gate electrode of the first transistor is electrically connected with a gate line, a first electrode of the first transistor is electrically connected with a data line, and a second electrode of the first transistor is electrically connected with a first electrode plate of the electrophoretic light-emitting structure, a gate electrode of the driving transistor and a first electrode plate of the first capacitor; the second electrode plate of the electrophoresis light-emitting structure is electrically connected with a first power voltage end; the second electrode plate of the first capacitor and the first electrode of the driving transistor are electrically connected with a second power supply voltage end, the second electrode of the driving transistor is electrically connected with the first end of the light-emitting element, and the second end of the light-emitting element is electrically connected with the first power supply voltage end;
the driving method comprises a reset phase and a display phase, and the driving method of the display phase comprises the following steps:
in a first display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is less than the threshold voltage of the light emitting element, and the electrophoretic light emitting structure displays a picture;
in a second display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is greater than a threshold voltage of the light emitting element, and the electrophoretic light emitting structure and the light emitting element display a picture together;
in a third display state, the gate line transmits a driving voltage to turn on the first transistor, an absolute value of a difference between a voltage input by the data line and a voltage input by the first power supply voltage terminal is smaller than a threshold voltage of the electrophoretic light emitting structure, an absolute value of a difference between a voltage input by the second power supply voltage terminal and a voltage input by the first power supply voltage terminal is larger than the threshold voltage of the light emitting element, and the light emitting element displays a picture.
2. The driving method of a two-sided display device according to claim 1,
when the driving transistors are all N-type transistors, in the display stage, after the gate line transmits driving voltage to turn on the first transistor, the data line inputs positive voltage, and the driving transistors are turned on;
when the driving transistors are all P-type transistors, in the display stage, after the gate line transmits driving voltage to turn on the first transistor, the data line inputs negative voltage, and the driving transistors are turned on.
3. The driving method of a dual-sided display device according to claim 1, wherein the driving method of the reset phase comprises:
when the driving transistor is an N-type transistor, the gate line transmits a driving voltage to turn on the first transistor, and the data line inputs a negative voltage;
when the driving transistor is a P-type transistor, the gate line transmits a driving voltage to turn on the first transistor, and the data line inputs a positive voltage.
4. The method of driving a dual-sided display device according to claim 1, wherein when the driving transistor is an N-type transistor, a first terminal of the light emitting element is a positive electrode, and a second terminal of the light emitting element is a negative electrode;
when the driving transistor is a P-type transistor, the first end of the light emitting element is a negative electrode, and the second end of the light emitting element is a positive electrode.
5. The double-sided display device is characterized by comprising a first display function layer and a second display function layer which are oppositely arranged, wherein the first display function layer comprises at least one electrophoretic light-emitting structure, and the second display function layer comprises a plurality of light-emitting elements; wherein, the orthographic projection of the light-emitting element on the light-emitting surface of the display device is at least partially overlapped with the orthographic projection of the electrophoretic light-emitting structure on the light-emitting surface of the display device; the display device further comprises a driving circuit for controlling the electrophoretic light-emitting structure and the light-emitting elements, wherein at least one light-emitting element corresponds to one driving circuit, the driving circuit is arranged on a driving circuit layer, and the driving circuit layer is arranged between the first display function layer and the second display function layer; the driving circuit layer comprises a plurality of first transistors, a plurality of driving transistors and a plurality of first capacitors;
the second display function layer comprises a substrate, a light emitting layer and a connecting pad, wherein the light emitting layer and the connecting pad are arranged on one side of the substrate, which faces the driving circuit layer; the first display function layer comprises a first electrode plate, and an electrophoretic particle layer and a second electrode plate which are sequentially arranged on one side of the first electrode plate, which is far away from the driving circuit layer;
the driving circuit layer comprises a grid metal layer, an active layer, a source drain electrode layer and a first electrode layer, wherein the first electrode layer is arranged on one side, close to the first display function layer, of the grid metal layer; the connecting pad corresponding to any light-emitting element comprises a first terminal connecting pad and a second terminal connecting pad;
the gate metal layer is provided with a gate electrode of the first transistor and a gate electrode of the driving transistor; the source-drain electrode layer is provided with a first pole and a second pole of the first transistor, a first pole and a second pole of the driving transistor and a plurality of first electric connecting terminals;
a second electrode of the first transistor in the driving circuit is electrically connected with a gate electrode of the driving transistor and is electrically connected with a first electrode plate of the electrophoresis light-emitting structure through a first electrode layer, and the second electrode of the driving transistor is electrically connected with the light-emitting layer of the light-emitting element through the first terminal connecting pad;
the first electric connection terminal is used for receiving a voltage signal transmitted by a first power supply voltage end, and is electrically connected with the light emitting layer of the light emitting element and the second electrode plate through the second end connection pad.
6. The dual-sided display device of claim 5, wherein a first electrode of any one of the driving transistors is multiplexed as a second plate of one of the first capacitors, and a gate electrode of any one of the driving transistors is multiplexed as a first plate of one of the first capacitors.
7. A dual sided display device as claimed in claim 5, wherein the light emitting elements are LEDs, Mini-LEDs or Micro-LEDs.
8. A dual sided display device as claimed in claim 5 wherein the electrophoretic particle layer comprises a plurality of electrophoretic particles, the electrophoretic particles comprising at least a first color electrophoretic particle and a second color electrophoretic particle.
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| CN110850621A (en) * | 2019-06-17 | 2020-02-28 | 錼创显示科技股份有限公司 | Display device |
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