CN111673625A - Silicon material cleaning process - Google Patents
Silicon material cleaning process Download PDFInfo
- Publication number
- CN111673625A CN111673625A CN202010722606.1A CN202010722606A CN111673625A CN 111673625 A CN111673625 A CN 111673625A CN 202010722606 A CN202010722606 A CN 202010722606A CN 111673625 A CN111673625 A CN 111673625A
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- China
- Prior art keywords
- silicon material
- sand blasting
- cleaning
- silicon
- cleaning process
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C11/00—Selection of abrasive materials or additives for abrasive blasts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
Abstract
The invention discloses a silicon material cleaning process, which comprises the following operation steps of feeding, sand blasting, cleaning and the like which are sequentially carried out, wherein the surface layer of a silicon material is completely ground by silicon carbide powder, so that metal impurities attached to the surface layer of the silicon material can be thoroughly removed.
Description
Technical Field
The invention relates to the technical field of silicon raw material pretreatment processes, in particular to a silicon material cleaning process.
Background
In the field of existing polycrystalline silicon products, in the crystal bar processing process, metal impurities in diamond wires used in silicon material cutting can be remained on the surface of the silicon material, the appearance and the quality of the silicon material are affected, and the metal impurities need to be removed. The traditional process mode is that quartz sand is used for carrying out sand blasting treatment on the surface of a silicon material, although the method can achieve a certain effect of removing metal impurities, the method cannot completely remove the metal impurities on the surface of the silicon material, so that when the silicon material is cleaned in the follow-up sand blasting operation, acid or alkali is added for cleaning, and the metal impurities attached to the surface of the silicon material can be completely removed.
However, the above-mentioned acid washing or alkaline washing operation is very likely to cause water pollution, and can seriously increase the pressure of sewage purification and discharge treatment in the whole process flow, which causes inconvenience to the efficient implementation of the relevant process flow.
Therefore, how to remove metal impurities on the surface of the silicon material efficiently and thoroughly and avoid causing water pollution is an important technical problem to be solved by those skilled in the art at present.
Disclosure of Invention
The invention aims to provide a silicon material cleaning process which can efficiently and thoroughly remove metal impurities on the surface of a silicon material and avoid water body pollution.
In order to solve the technical problem, the invention provides a silicon material cleaning process, which comprises the following steps:
feeding, namely feeding the silicon material to be treated into the working surface of a sand blasting machine;
performing sand blasting, namely performing sand blasting treatment on the surface of the silicon material by using silicon carbide powder sprayed by a sand blasting machine to remove impurities attached to the surface layer of the silicon material;
and cleaning, namely cleaning the surface layer of the silicon material after the sand blasting operation is finished by using pure water so as to clean the silicon carbide powder remained on the surface of the silicon material.
Preferably, in the step of cleaning, pure water bubbling or ultrasonic cleaning is performed on the silicon material after the sand blasting operation is completed so as to clean the silicon carbide powder remaining on the surface of the silicon material.
Compared with the background art, in the silicon material cleaning process provided by the invention, through the operation steps of feeding, sand blasting, cleaning and the like which are sequentially carried out, the surface layer of the silicon material is completely ground by using the silicon carbide powder, so that metal impurities attached to the surface layer of the silicon material can be thoroughly removed.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a flow chart of a silicon material cleaning process according to an embodiment of the present invention.
Detailed Description
The core of the invention is to provide a silicon material cleaning process, which can efficiently and thoroughly remove metal impurities on the surface of a silicon material and avoid water body pollution.
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1, fig. 1 is a flow chart of a silicon material cleaning process according to an embodiment of the invention.
In a specific embodiment, the silicon material cleaning process provided in one embodiment of the present invention includes:
and sending the silicon material to be processed to the working surface of the sand blasting machine.
Step 102, sand blasting:
and (3) carrying out sand blasting treatment on the surface of the silicon material by using the silicon carbide powder sprayed out after pressurization by a sand blasting machine so as to remove impurities attached to the surface layer of the silicon material.
Step 103, cleaning:
and cleaning the surface layer of the silicon material after the sand blasting operation is finished by using pure water so as to clean the silicon carbide powder remained on the surface of the silicon material.
More specifically, the surface layer of the silicon material after the sand blasting operation is finished by pure water is cleaned, and in practical application, the surface cleaning treatment of the silicon material can be specifically performed by means of pure water bubbling or ultrasonic cleaning, so that the silicon carbide powder remaining on the surface layer of the silicon material after the sand blasting treatment can be thoroughly removed, and the surface layer of the silicon material is clean and regular, so that the process requirements of the subsequent processes of processing and forming the silicon material and the like can be met.
In summary, in the silicon material cleaning process provided by the invention, through the operation steps of feeding, sand blasting, cleaning and the like which are sequentially carried out, the surface layer of the silicon material is completely ground by using the silicon carbide powder, so that metal impurities attached to the surface layer of the silicon material can be thoroughly removed, and the silicon carbide is used as a sand blasting medium, so that the silicon carbide powder remained on the surface of the silicon material can be cleaned only by pure water after sand blasting operation is finished, and chemical cleaning operations such as acid washing, alkali washing and the like are not needed, so that the sewage treatment pressure of the whole process flow is greatly reduced, the water pollution phenomenon is avoided, the process cost and the operation difficulty are reduced, the process flow is simplified, and the silicon material cleaning effect and the cleaning treatment efficiency are obviously improved.
The silicon material cleaning process provided by the invention is described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (2)
1. A silicon material cleaning process is characterized by comprising the following steps:
feeding, namely feeding the silicon material to be treated into the working surface of a sand blasting machine;
performing sand blasting, namely performing sand blasting treatment on the surface of the silicon material by using silicon carbide powder sprayed by a sand blasting machine to remove impurities attached to the surface layer of the silicon material;
and cleaning, namely cleaning the surface layer of the silicon material after the sand blasting operation is finished by using pure water so as to clean the silicon carbide powder remained on the surface of the silicon material.
2. The silicon material cleaning process according to claim 1, wherein in the step cleaning, pure water bubbling or ultrasonic cleaning is performed on the silicon material after the sand blasting operation is completed so as to clean the silicon carbide powder remained on the surface of the silicon material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010722606.1A CN111673625A (en) | 2020-07-24 | 2020-07-24 | Silicon material cleaning process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010722606.1A CN111673625A (en) | 2020-07-24 | 2020-07-24 | Silicon material cleaning process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111673625A true CN111673625A (en) | 2020-09-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010722606.1A Pending CN111673625A (en) | 2020-07-24 | 2020-07-24 | Silicon material cleaning process |
Country Status (1)
| Country | Link |
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| CN (1) | CN111673625A (en) |
Citations (9)
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| JP2001328831A (en) * | 2000-03-13 | 2001-11-27 | Toshiba Ceramics Co Ltd | Method for producing quartz glass crucible for pulling silicon single crystal |
| CN1947869A (en) * | 2006-05-12 | 2007-04-18 | 浙江昱辉阳光能源有限公司 | Method for cleaning silicon material |
| CN104204311A (en) * | 2012-01-26 | 2014-12-10 | 思利科材料有限公司 | Method for purification of silicon |
| CN105750275A (en) * | 2014-12-18 | 2016-07-13 | 宁夏隆基硅材料有限公司 | Silicon material cleaning method |
| CN106115715A (en) * | 2016-06-26 | 2016-11-16 | 河南盛达光伏科技有限公司 | Polycrystalline silicon ingot casting partly melts the circulation tailing cleaning treatment method that technique produces |
| CN106583053A (en) * | 2016-12-21 | 2017-04-26 | 晶科能源有限公司 | Silicon material floatation and cleaning method |
| CN106584285A (en) * | 2016-12-29 | 2017-04-26 | 苏州阿特斯阳光电力科技有限公司 | Method for repairing edge breakage of silicon wafers |
| CN108519266A (en) * | 2018-04-16 | 2018-09-11 | 江苏美科硅能源有限公司 | A kind of stage division of the efficient silicon ingot of fine melt |
| CN108807595A (en) * | 2018-06-13 | 2018-11-13 | 苏州澳京光伏科技有限公司 | A kind of manufacturing method of low warpage polysilicon solar cell substrate |
-
2020
- 2020-07-24 CN CN202010722606.1A patent/CN111673625A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001328831A (en) * | 2000-03-13 | 2001-11-27 | Toshiba Ceramics Co Ltd | Method for producing quartz glass crucible for pulling silicon single crystal |
| CN1947869A (en) * | 2006-05-12 | 2007-04-18 | 浙江昱辉阳光能源有限公司 | Method for cleaning silicon material |
| CN104204311A (en) * | 2012-01-26 | 2014-12-10 | 思利科材料有限公司 | Method for purification of silicon |
| CN105750275A (en) * | 2014-12-18 | 2016-07-13 | 宁夏隆基硅材料有限公司 | Silicon material cleaning method |
| CN106115715A (en) * | 2016-06-26 | 2016-11-16 | 河南盛达光伏科技有限公司 | Polycrystalline silicon ingot casting partly melts the circulation tailing cleaning treatment method that technique produces |
| CN106583053A (en) * | 2016-12-21 | 2017-04-26 | 晶科能源有限公司 | Silicon material floatation and cleaning method |
| CN106584285A (en) * | 2016-12-29 | 2017-04-26 | 苏州阿特斯阳光电力科技有限公司 | Method for repairing edge breakage of silicon wafers |
| CN108519266A (en) * | 2018-04-16 | 2018-09-11 | 江苏美科硅能源有限公司 | A kind of stage division of the efficient silicon ingot of fine melt |
| CN108807595A (en) * | 2018-06-13 | 2018-11-13 | 苏州澳京光伏科技有限公司 | A kind of manufacturing method of low warpage polysilicon solar cell substrate |
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Effective date of registration: 20210804 Address after: 614000 No. 8, Shizi street, Jinsu Town, Wutongqiao District, Leshan City, Sichuan Province Applicant after: Sichuan Yongxiang Photovoltaic Technology Co.,Ltd. Address before: 614800 No.100 Yongxiang Road, Zhugen Town, Wutongqiao District, Leshan City, Sichuan Province Applicant before: YONGXIANG Co.,Ltd. |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20200918 |