CN111668285A - OLED display device and preparation method - Google Patents
OLED display device and preparation method Download PDFInfo
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- CN111668285A CN111668285A CN202010671383.0A CN202010671383A CN111668285A CN 111668285 A CN111668285 A CN 111668285A CN 202010671383 A CN202010671383 A CN 202010671383A CN 111668285 A CN111668285 A CN 111668285A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The application discloses OLED display device, OLED display device includes: the OLED device comprises a substrate, and a thin film transistor layer, an OLED device layer, a sealing layer, a LiF layer and a thin film packaging layer which are sequentially formed on the substrate; wherein the refractive index n of the material of the capping layer is greater than 1.8. The application discloses a preparation method of the OLED display device. This application has improved the luminousness of capping layer among the OLED display device through the capping layer material of preparation high refractive index, has further promoted OLED display device's display effect.
Description
Technical Field
The application relates to the technical field of display, in particular to an OLED display device and a preparation method thereof.
Background
An Organic Light Emitting Diode (OLED) is a photoelectric technology for realizing multi-color display by using an Organic semiconductor material to generate reversible color change under current drive. The OLED has the advantages of being light, thin, high in brightness, active in light emission, low in energy consumption, large in viewing angle, fast in response, flexible, wide in working temperature range and the like, and is considered as a new generation display technology with the greatest development prospect.
However, there is a great gap between the external quantum efficiency and the internal quantum efficiency of the OLED, which greatly restricts the development of the OLED. Therefore, how to reduce the total reflection effect in the OLED device and improve the ratio of light coupled to the external space in front of the device (light extraction efficiency) attracts much attention. At present, a Capping Layer (CPL) with a high refractive index is usually deposited on the cathode of the OLED device to reduce the total reflection of the emergent light at the cathode, thereby improving the external quantum efficiency of the OLED. The light transmittance of the conventional Capping Layer (CPL) material is low, which affects the display effect of the OLED display device.
In summary, in the conventional OLED display device and the manufacturing method thereof, the light transmittance of the used Capping Layer (CPL) material is low, which further affects the display effect of the OLED display device.
Disclosure of Invention
The embodiment of the application provides an OLED display device and a preparation method thereof, which can improve the external quantum efficiency of an OLED and solve the technical problem that the display effect of the OLED display device is further influenced because the light transmittance of a used Capping Layer (CPL) material is low in the conventional OLED display device and the preparation method thereof.
The embodiment of the present application provides an OLED display device, the OLED display device includes: the OLED device comprises a substrate, and a thin film transistor layer, an OLED device layer, a sealing layer, a LiF layer and a thin film packaging layer which are sequentially formed on the substrate;
wherein the refractive index n of the material of the capping layer is greater than 1.8.
In some embodiments, the capping layer is formed by mixing a coupling-out layer material with a nanocrystalline material.
In some embodiments, the mixing ratio of the coupling-out layer material to the nanocrystalline material is 100: 1-1000: 1.
In some embodiments, the nanocrystalline material comprises a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
In some embodiments, the coupling-out layer material is an inorganic transparent material or an organic transparent material.
In some embodiments, the inorganic transparent material is ZnO, ZnSe, TiO2And SiN3At least one of; the organic transparent material is NPB and Alq3At least one of (1).
In some embodiments, the OLED device layer includes a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, an electron injection layer, and a cathode, which are sequentially stacked.
The embodiment of the application also provides a preparation method of the above-mentioned OLED display device, which is characterized in that the method includes:
s10, preparing a thin film transistor layer on a substrate;
s20, evaporating an OLED device layer on the thin film transistor layer;
s30, evaporating a capping layer on the OLED device layer, wherein the refractive index n of the material of the capping layer is larger than 1.8;
s40, evaporating a LiF layer on the capping layer;
s50, preparing a thin film packaging layer on the LiF layer, wherein the thin film packaging layer completely covers the LiF layer, the capping layer, the OLED device layer and the thin film transistor layer.
In some embodiments, in S30, the capping layer is formed by mixing a coupling-out layer material and a nanocrystal material, and a mixing ratio of the coupling-out layer material to the nanocrystal material is 100:1 to 1000: 1.
In some embodiments, the nanocrystalline material comprises a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
According to the OLED display device and the preparation method, the high-refractive-index capping layer material is prepared, so that the light transmittance of the capping layer in the OLED display device is improved, and the display effect of the OLED display device is further improved.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of an OLED display device according to an embodiment of the present application.
Fig. 2 is a flowchart of a method for manufacturing an OLED display device according to an embodiment of the present disclosure.
Fig. 3A to fig. 3E are schematic structural diagrams illustrating a method for manufacturing the OLED display device shown in fig. 2.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present application and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed in a particular orientation, and be operated in a particular manner, and are not to be construed as limiting the present application. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may comprise direct contact of the first and second features, or may comprise contact of the first and second features not directly but through another feature in between. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the application. In order to simplify the disclosure of the present application, specific example components and arrangements are described below. Of course, they are merely examples and are not intended to limit the present application. Moreover, the present application may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, examples of various specific processes and materials are provided herein, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.
The embodiment of the application aims at the technical problem that the display effect of the OLED display device is further influenced by the fact that the light transmittance of a used capping layer (CPL) material is low in the existing OLED display device and the preparation method, and the defect can be solved.
Fig. 1 is a schematic structural diagram of an OLED display device according to an embodiment of the present disclosure. Wherein the OLED display device 10 includes: the OLED device comprises a substrate 11, and a thin film transistor Layer 12, an OLED device Layer 13, a Capping Layer (CPL) 14, a LiF Layer 15 and a thin film encapsulation Layer 16 which are sequentially formed on the substrate 11, wherein the refractive index n of the material of the Capping Layer (CPL) 14 is greater than 1.8.
Specifically, the substrate 11 may be a flexible substrate, and the flexible substrate, the thin film transistor layer 12, and the OLED device layer 13 cooperate to form a flexible display panel. The material of the flexible substrate is not limited in the present application, and may be an organic polymer, and the organic polymer may be one of Polyimide (PI), Polyimide (PA), Polycarbonate (PC), Polyethersulfone (PES), Polyethylene Terephthalate (PET), Polyethylene Naphthalate (PEN), polymethyl Methacrylate (PMMA), and Cyclic Olefin Copolymer (COC), for example.
Specifically, the OLED device Layer 13 includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an electroluminescent Layer (EML), an Electron Transport Layer (EHL), an Electron Injection Layer (EIL), and a Cathode (Cathode) which are sequentially stacked.
Further, the Hole Injection Layer (HIL) serves as a buffer Layer in the OLED display device 10, so that a Hole injection barrier between the thin film transistor Layer 12 and the Hole Transport Layer (HTL) can be smoothed, and the problem of mismatch of work functions of the interface of the OLED device Layer 13 is effectively solved. Similarly, the Electron Injection Layer (EIL) as a buffer Layer in the buffer Layer of the OLED display device 10 can smooth the Electron injection barrier between the Cathode (Cathode) and the (Electron Transport Layer, EHL), and effectively solve the problem of the mismatch of the work function of the interface of the OLED device Layer 13. And the electroluminescent Layer (EML) is displayed under the action of the anode in the thin film transistor Layer 12, the Hole Injection Layer (HIL), the Hole Transport Layer (HTL), the Electron Transport Layer (EHL), the Electron Injection Layer (EIL), and the Cathode (Cathode).
Specifically, the Capping Layer (CPL) 14 is used to improve the light transmittance of the OLED device Layer 13, and the Capping Layer (CPL) 14 is formed by mixing a material of a coupling output Layer and a nanocrystalline material; the mixing ratio of the coupling output layer material to the nanocrystalline material is 100: 1-1000: 1.
Preferably, the nanocrystalline material comprises a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
Specifically, the coupling-out layer material is an inorganic transparent material or an organic transparent material; the inorganic transparent material is ZnO, ZnSe or TiO2And SiN3At least one of; the organic transparent material is NPB and Alq3At least one of (1).
Preferably, the refractive index n of the Capping Layer (CPL) 14 after being mixed with the lead oxide nanocrystal material or the barium oxide nanocrystal material via the coupling-out Layer material is about 2.3 (the refractive index of the material can be increased by introducing lead or barium and other large ions according to maxwell electromagnetic field theory).
As can be seen from fig. 1, after the Capping Layer (CPL) 14 with a high refractive index is prepared, the light emitting path of the OLED device Layer 13 is changed from the light emitting path a after the coupling-out Layer material (the refractive index n of the coupling-out Layer material is less than 1.8) is used to the light emitting path b, so as to improve the light transmittance of the OLED device Layer 13.
Specifically, the LiF layer 15 has a certain barrier effect on moisture and oxygen, and can prevent moisture and oxygen from invading the OLED device layer 13 to a certain extent.
Specifically, the thin film encapsulation Layer 16 covers the OLED device Layer 13, and the thin film encapsulation Layer 16 covers the LiF Layer 15, the Capping Layer (CPL) 14, the OLED device Layer 13, the thin film transistor Layer 12, and the side edges of the substrate 11, and the substrate 11 is wrapped in the thin film encapsulation Layer 16. The thin film encapsulation layer 16 serves as a protective layer, and can block permeation and invasion of water and oxygen, so that stability of the OLED display device 10 provided by the embodiment of the application in the air is improved.
In some embodiments, the material of the thin Film encapsulation layer 16 may be an organic insulating material, and the organic insulating material is one or more of an Array organic insulating Film (PFA), a polymethyl methacrylate (PMMA), and a silicone resin.
Fig. 2 is a flowchart of a method for manufacturing an OLED display device according to an embodiment of the present disclosure. Wherein the method comprises the following steps:
s10, preparing a thin film transistor layer 12 on a substrate 11;
specifically, the S10 further includes:
first, a substrate 11 is provided, where the substrate 11 may be an organic polymer, and the organic polymer may be one of Polyimide (PI), Polyimide Adhesive (PA), Polycarbonate (PC), Polyethersulfone (PES), Polyethylene Terephthalate (PET), Polyethylene naphthalate (PEN), polymethyl methacrylate (PMMA), and Cyclic Olefin Copolymer (COC), for example; then, a thin-film transistor layer 12 is prepared on the substrate 11 by using a chemical vapor deposition method, as shown in fig. 3A.
And S20, evaporating the OLED device layer 13 on the thin film transistor layer 12.
Specifically, the S20 further includes:
an OLED device Layer 13 is vapor-deposited on the thin-film transistor Layer 12, and the OLED device Layer 13 includes a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an electroluminescent Layer (EML), an Electron Transport Layer (EHL), an Electron Injection Layer (EIL), and a Cathode (Cathode) stacked in sequence. Further, the Hole Injection Layer (HIL) serves as a buffer Layer in the OLED display device 10, so that a Hole injection barrier between the thin film transistor Layer 12 and the Hole Transport Layer (HTL) can be smoothed, and the problem of mismatch of work functions of the interface of the OLED device Layer 13 is effectively solved. Similarly, the Electron Injection Layer (EIL) as a buffer Layer in the buffer Layer of the OLED display device 10 can smooth the Electron injection barrier between the Cathode (Cathode) and the (Electron Transport Layer, EHL), and effectively solve the problem of the mismatch of the work function of the interface of the OLED device Layer 13. And the electroluminescent Layer (EML) emits light under the action of the anode in the thin film transistor Layer 12, the Hole Injection Layer (HIL), the Hole Transport Layer (HTL), the Electron Transport Layer (EHL), the Electron Injection Layer (EIL), and the Cathode (Cathode), as shown in fig. 3B.
S30, evaporating a capping layer 14 on the OLED device layer 13, wherein the refractive index n of the material of the capping layer 14 is greater than 1.8.
Specifically, the S30 further includes:
a Capping Layer (CPL) 14 is formed on the Cathode (Cathode) of the uppermost Layer in the OLED device Layer 13 by an evaporation process, as shown in fig. 3C.
Specifically, the Capping Layer (CPL) 14 is used to improve the light transmittance of the OLED device Layer 13, and the Capping Layer (CPL) 14 is formed by mixing a material of a coupling output Layer and a nanocrystalline material; the mixing ratio of the coupling output layer material to the nanocrystalline material is 100: 1-1000: 1.
Preferably, the nanocrystalline material comprises a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
Specifically, the coupling-out layer material is an inorganic transparent material or an organic transparent material; the inorganic transparent material is ZnO, ZnSe or TiO2And SiN3At least one of; the organic transparent material is NPB and Alq3At least one of (1).
Preferably, the refractive index n of the Capping Layer (CPL) 14 after being mixed with the lead oxide nanocrystal material or the barium oxide nanocrystal material (the mixing ratio is 100: 1-1000: 1) through the coupling output Layer material is about 2.3 (the refractive index of the material can be improved by introducing lead or barium and other large ions according to maxwell electromagnetic field theory).
S40, depositing a LiF layer 15 on the capping layer 14.
Specifically, the S40 further includes:
a metal film is evaporated on the Capping Layer (CPL) 14 to form a LiF Layer 15; the LiF layer 15 has a certain blocking effect on water vapor and oxygen, and can prevent the water vapor and oxygen from invading the OLED device layer 13 to a certain extent, as shown in fig. 3D.
S50, preparing a thin film encapsulation layer 16 on the LiF layer 15, wherein the thin film encapsulation layer 16 completely covers the LiF layer 15, the capping layer 14, the OLED device layer 13, and the thin film transistor layer 12.
Specifically, the S50 further includes:
preparing a thin film encapsulation layer 16 on the LiF layer 15, wherein the thin film encapsulation layer 16 completely covers the LiF layer 15, the capping layer 14, the OLED device layer 13 and the thin film transistor layer 12. The thin film encapsulation layer 16 serves as a protective layer, which can block permeation and invasion of water and oxygen, and improve stability of the OLED display device 10 provided by the embodiment of the present application in air, as shown in fig. 3E.
Preferably, the material of the thin Film encapsulation layer 16 may be an organic insulating material, and the organic insulating material is one or more of an Array organic insulating Film (PFA), a polymethyl methacrylate (PMMA), and a silicone resin.
According to the OLED display device and the preparation method, the high-refractive-index capping layer material is prepared, so that the light transmittance of the capping layer in the OLED display device is improved, and the display effect of the OLED display device is further improved.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The OLED display device and the manufacturing method provided in the embodiments of the present application are described in detail above, and specific examples are applied in the description to explain the principle and the implementation manner of the present application, and the description of the embodiments above is only used to help understanding the technical solution and the core idea of the present application; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications or substitutions do not depart from the spirit and scope of the present disclosure as defined by the appended claims.
Claims (10)
1. An OLED display device, comprising: the OLED device comprises a substrate, and a thin film transistor layer, an OLED device layer, a sealing layer, a LiF layer and a thin film packaging layer which are sequentially formed on the substrate;
wherein the refractive index n of the material of the capping layer is greater than 1.8.
2. The OLED display device claimed in claim 1, wherein the capping layer is formed by mixing a coupling-out layer material and a nanocrystalline material.
3. The OLED display device according to claim 2, wherein a mixing ratio of the coupling-out layer material to the nanocrystalline material is 100: 1-1000: 1.
4. The OLED display device of claim 3, wherein the nanocrystalline material comprises a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
5. The OLED display device of claim 2, wherein the coupling-out layer material is an inorganic transparent material or an organic transparent material.
6. The OLED display device of claim 5, wherein the inorganic transparent material is ZnO, ZnSe, TiO2And SiN3At least one of; the organic transparent material is NPB and Alq3At least one of (1).
7. The OLED display device according to claim 1, wherein the OLED device layer includes a hole injection layer, a hole transport layer, an electroluminescent layer, an electron transport layer, an electron injection layer, and a cathode, which are sequentially stacked.
8. A method of manufacturing an OLED display device as claimed in claim 1, wherein the method comprises:
s10, preparing a thin film transistor layer on a substrate;
s20, evaporating an OLED device layer on the thin film transistor layer;
s30, evaporating a capping layer on the OLED device layer, wherein the refractive index n of the material of the capping layer is larger than 1.8;
s40, evaporating a LiF layer on the capping layer;
s50, preparing a thin film packaging layer on the LiF layer, wherein the thin film packaging layer completely covers the LiF layer, the capping layer, the OLED device layer and the thin film transistor layer.
9. The method for manufacturing the OLED display device according to claim 8, wherein in S30, the capping layer is formed by mixing a coupling-out layer material and a nanocrystal material, and a mixing ratio of the coupling-out layer material to the nanocrystal material is 100: 1-1000: 1.
10. The method of manufacturing an OLED display device according to claim 9, wherein the nanocrystalline material includes a lead oxide nanocrystalline material or a barium oxide nanocrystalline material.
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