CN111665373A - Method for detecting photoelectric property of photoelectric material micro-area - Google Patents
Method for detecting photoelectric property of photoelectric material micro-area Download PDFInfo
- Publication number
- CN111665373A CN111665373A CN202010608309.4A CN202010608309A CN111665373A CN 111665373 A CN111665373 A CN 111665373A CN 202010608309 A CN202010608309 A CN 202010608309A CN 111665373 A CN111665373 A CN 111665373A
- Authority
- CN
- China
- Prior art keywords
- photoelectric
- micro
- electrode
- area
- detecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 67
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000000523 sample Substances 0.000 claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 239000013307 optical fiber Substances 0.000 claims abstract description 20
- 238000012876 topography Methods 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 19
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 18
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 15
- 238000010586 diagram Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 9
- 239000003638 chemical reducing agent Substances 0.000 claims description 5
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 claims description 5
- 230000005693 optoelectronics Effects 0.000 claims description 5
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 239000003115 supporting electrolyte Substances 0.000 claims description 5
- -1 tetrabutylammonium hexafluorophosphate Chemical compound 0.000 claims description 5
- HTNDMKDAPWJPEX-UHFFFAOYSA-L 1-ethyl-4-(1-ethylpyridin-1-ium-4-yl)pyridin-1-ium;diperchlorate Chemical compound [O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.C1=C[N+](CC)=CC=C1C1=CC=[N+](CC)C=C1 HTNDMKDAPWJPEX-UHFFFAOYSA-L 0.000 claims description 4
- 239000003792 electrolyte Substances 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 239000007795 chemical reaction product Substances 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 3
- 238000012360 testing method Methods 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 11
- 238000011160 research Methods 0.000 abstract description 5
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000006872 improvement Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002265 redox agent Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/02—Non-SPM analysing devices, e.g. SEM [Scanning Electron Microscope], spectrometer or optical microscope
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q30/00—Auxiliary means serving to assist or improve the scanning probe techniques or apparatus, e.g. display or data processing devices
- G01Q30/20—Sample handling devices or methods
Landscapes
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Analytical Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Molecular Biology (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a method for detecting photoelectric property of a photoelectric material micro-area, and relates to the technical field of photoelectrochemistry. The invention is based on a scanning electrochemical microscope device, and obtains the photoelectrochemical property of the micro-area of the material by accurately scanning the micro-area (including crystal grains, crystal boundaries and the like) of a sample in a photoelectrochemical pool by adopting an optical fiber micro-probe and a micro-electrode probe. The method for detecting the photoelectric property of the photoelectric material micro-area can measure the photoelectric property difference corresponding to the micro-topography of different surfaces of the material micro-area and detect the photoelectric property distribution of the crystal boundary and different crystal grain orientations, solves the problem that the traditional method can only measure the overall macroscopic photoelectric property of the material, and has important guiding significance for the research of a photoelectric conversion mechanism and the improvement of process performance.
Description
Technical Field
The invention relates to the technical field of photoelectrochemistry, in particular to a method for detecting photoelectric properties of a micro-area of a photoelectric material.
Background
With the increasing exhaustion of fossil fuel energy, solar energy, which is an inexhaustible energy source for the nature, draws more and more attention of researchers, and the heat of research on photovoltaic energy technology is rising. Theoretical research shows that the relationship between the micro-area/crystal boundary morphology and the photoelectric property of the photoelectric material is very important.
The methods traditionally used to study photoelectrochemical properties mainly include two broad categories of spectroscopic and electrochemical methods. The former method mainly includes a transient absorption spectrometer, an ultraviolet-visible spectrophotometer, a fluorescence spectrophotometer and the like. The latter method mainly records the information of photocurrent, open-circuit potential, photocurrent-potential curve and the like of various photoelectrochemical reactions by means of various electrochemical measurement technologies, but the traditional methods can only obtain the photochemical or electrochemical information of the whole substance in a photoelectrochemical system under a macroscopic scale, and are difficult to obtain signals of single crystal grains or crystal boundaries/micro areas, and the macroscopic photoelectricity information cannot completely reflect the influence and action mechanism of the microstructure and components of the material on the photoelectricity property of the material.
Therefore, the technical personnel in the field are dedicated to develop a method for detecting the photoelectric property of the micro-area of the photoelectric material, can measure the photoelectric property difference corresponding to the micro-topography of different surfaces of the micro-area of the material, and detect the photoelectric property distribution of the crystal boundary and different crystal grain orientations, solves the limitation that the traditional method can only measure the overall macroscopic photoelectric property of the material, and has important guiding significance for the research of a photoelectric conversion mechanism and the improvement of process performance.
Disclosure of Invention
In view of the above-mentioned defects of the prior art, the technical problem to be solved by the present invention is how to measure the photoelectric property difference corresponding to different surface micro-morphologies of the material micro-region, and detect the photoelectric property distribution of the grain boundary and different grain orientations.
In order to achieve the above object, the present invention provides a method for detecting photoelectric properties of a micro-area of a photoelectric material, which can select an optical fiber micro-probe method, and comprises the following steps:
step S1: acetonitrile and 0.1 mol/L tetrabutylammonium hexafluorophosphate are selected to prepare a supporting electrolyte, then 0.05 mol/L ethyl viologen diperchlorate or ferrocene is adopted as an oxidizing or reducing agent, a silver/silver nitrate electrode is adopted as a reference electrode, and a platinum electrode is adopted as a counter electrode to form a photoelectrochemical reaction tank;
step S2: fixing the photoelectric thin film material to be detected at the bottom of the photoelectrochemical reaction tank, and sequentially connecting a three-electrode system in a scanning electrochemical microscope system with the silver/silver nitrate electrode, the platinum electrode and the working electrode of the photoelectric thin film material to be detected; meanwhile, the optical fiber microprobe is connected with the scanning electrochemical microscope moving platform to form a precise control scanning moving platform;
step S3: the scanning electrochemical microscope is precisely controlled to move, so that the optical fiber microprobe is close to the surface of the photoelectric thin film material to be detected and is kept at a distance of 2-10 micrometers;
step S4: and turning on a light source, irradiating light with certain intensity and wavelength onto the photoelectric thin film material to be detected through the optical fiber microprobe, controlling the optical fiber microprobe to scan the surface of the photoelectric thin film material to be detected at a constant speed through the scanning electrochemical microscope, and collecting micro-area photoelectrochemical reaction signals to form a photoelectrochemical signal distribution diagram of different areas.
Further, a microelectrode probe method can be selected, and the method comprises the following steps:
step T1: acetonitrile and 0.1 mol/L tetrabutylammonium hexafluorophosphate are selected to prepare a supporting electrolyte, then 0.05 mol/L ethyl viologen diperchlorate or ferrocene is adopted as an oxidizing or reducing agent, a micro electrode is adopted as a working electrode, silver/silver nitrate is adopted as a reference electrode, and the photoelectric thin film material to be tested is adopted as a counter electrode to form a photoelectrochemical test cell;
step T2: connecting the microelectrode probe with the scanning electrochemical microscope moving platform to form a precise control scanning moving platform, and enabling the microelectrode probe to be close to the surface of the photoelectric thin film material to be detected and keep the distance between 1 and 10 micrometers through precise control movement of the scanning electrochemical microscope;
step T3: and turning on the light source, applying an oxidation or reduction potential required by a photoelectric reaction product to the working electrode of the microelectrode probe, controlling the microelectrode probe to scan on the surface of the photoelectric thin film material to be detected at a constant speed through the scanning electrochemical microscope, and collecting a micro-area photoelectrochemical reaction signal to form a photoelectrochemical signal distribution diagram of different areas. .
Further, in step S1 and step T1, C2H3N-C16H36NPF6-C14H18Cl2N2O8The electrolyte is configured for detecting a P-type photoelectric material, and C2H3N-C16H36NPF6-C10H10The Fe electrolyte is configured for detecting N-type photoelectric materials.
Further, the diameter of the optical fiber probe in step S2 is 3 to 15 μm.
Further, the diameter of the micro-electrode in the step T1 is 1 to 20 μm.
Further, the micro-electrode in step T1 may be configured as a platinum electrode.
Further, the micro-electrode in step T1 may be configured as a micro-disk electrode fabricated with a silica glass coating.
Further, in step S4, collecting the micro-area photoelectrochemical reaction signal through the working electrode of the photoelectric thin film material to be detected.
Further, in step T3, a micro-area photoelectrochemical reaction signal is collected by the micro-electrode.
Furthermore, the optical responses corresponding to the different surface micro-morphologies of the micro-area of the photoelectric film material to be measured can be measured, and the optical response difference of the grain boundary and different grains can be detected.
The method for detecting the photoelectric property of the photoelectric material micro-area can measure the photoelectric property difference corresponding to the micro-topography of different surfaces of the material micro-area and detect the photoelectric property distribution of the crystal boundary and different crystal grain orientations, solves the problem that the traditional method can only measure the whole macroscopic photoelectric property of the material, and has important guiding significance for the research of a photoelectric conversion mechanism and the improvement of process performance.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of the photoelectric response of the microelectrode probe for detecting the micro-regions and grain boundaries of the photoelectric material according to a preferred embodiment of the present invention;
FIG. 2 is a representative SEM image of the surface of a polysilicon film sample to be tested according to a preferred embodiment of the present invention;
FIG. 3 is a diagram showing the micro-domain/grain boundary electro-optic response detected by the micro-electrode probe according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram of the optoelectronic response of the optoelectronic material micro-area and the grain boundary detected by the fiber optic microprobe according to the preferred embodiment of the present invention;
FIG. 5 is a plot of the micro-zone/grain boundary electro-optic response detected by the fiber optic microprobe in accordance with a preferred embodiment of the present invention.
The system comprises a scanning electrochemical microscope control system, 2-counter electrodes, 3-photoelectric film material areas, 4-photoelectrochemical reaction areas, 5-microelectrode probes, 6-reference electrodes, 7-working electrodes and 8-optical fiber microprobes.
Detailed Description
The technical contents of the preferred embodiments of the present invention will be more clearly and easily understood by referring to the drawings attached to the specification. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. The size and thickness of each component shown in the drawings are arbitrarily illustrated, and the present invention is not limited to the size and thickness of each component. The thickness of the components may be exaggerated where appropriate in the figures to improve clarity.
Example one
In the photoelectrochemical reaction solution containing an oxidizing agent or a reducing agent, a polycrystalline silicon film material to be tested is fixed at the bottom of a photoelectrochemical reaction region 4, a microelectrode probe 5 (a platinum electrode with the diameter of 3 μm) is used as a working electrode, silver/silver nitrate is used as a reference electrode 6, and the polycrystalline silicon film material to be tested is used as a counter electrode 2, so that a photoelectrochemical test cell is formed. The microelectrode probe 5 is connected with the scanning electrochemical microscope control system 1 to form a precise control scanning moving platform, and the microelectrode probe 5 is close to the surface of the photoelectric film material area 3 to be detected and is kept at a distance of 1-10 mu m by the precise control movement of the scanning electrochemical microscope. And (2) turning on a light source, applying oxidation or reduction potential required by a photoelectric reaction product to a working electrode of the microelectrode probe 5, controlling the microelectrode probe 5 to scan on the surface of the polysilicon film material at a constant speed by a scanning electrochemical microscope, wherein the scanning speed is 3 mu m/s, and collecting a micro-area photoelectrochemical reaction signal by the microelectrode probe 5 (the working electrode) to form a photoelectrochemical signal distribution diagram in different areas. The photoelectric response diagram of the micro-electrode probe 5 for detecting the micro-area and the grain boundary of the photoelectric material is shown in fig. 1, the representative SEM diagram of the surface of the selected polysilicon film material is shown in fig. 2, and the photoelectric response diagram of the micro-area/the grain boundary obtained by the method is shown in fig. 3.
Example two
Acetonitrile and 0.1 mol/l tetrabutylammonium hexafluorophosphate are configured as supporting electrolyte, 0.05 mol/l ferrocene is used as redox agent, a silver/silver nitrate electrode is selected as a reference electrode 6, a platinum electrode is used as a counter electrode 2, a platinum wire is used as a working electrode 7, and an optical fiber with the diameter of 3 microns is used as an optical fiber microprobe 8. Fixing a polysilicon film material to be detected at the bottom of the photoelectrochemical reaction area 4, and sequentially connecting a three-electrode system in a scanning electrochemical microscope system with a silver/silver nitrate reference electrode 6, a platinum counter electrode 2 and a polysilicon film material working electrode 7. Meanwhile, the optical fiber microprobe 8 is connected with the scanning electrochemical microscope control system 1 to form an accurate control scanning moving platform. The movement is precisely controlled by a scanning electrochemical microscope, so that the microprobe is close to the surface of the photoelectric film material area 3 to be detected and is kept at a distance of 2-10 microns. And (2) turning on a light source, irradiating light with certain intensity and wavelength onto the photoelectric material to be detected through the optical fiber microprobe 8, controlling the optical fiber microprobe 8 to scan on the surface of the polycrystalline silicon film material at a constant speed of 10 mu m/s through a scanning electrochemical microscope, and collecting micro-area photoelectrochemical reaction signals through the polycrystalline silicon film material working electrode 7 to form a photoelectrochemical signal distribution diagram of different areas. In this embodiment, a schematic diagram of photoelectric response of the optical fiber microprobe 8 for detecting the micro-regions and grain boundaries of the photoelectric material is shown in fig. 4, and a diagram of photoelectric response of the micro-regions/grain boundaries obtained by the method is shown in fig. 5.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (10)
1. A method for detecting photoelectric property of photoelectric material micro-area is characterized in that an optical fiber micro-probe method can be selected, comprising the following steps:
step S1: acetonitrile and 0.1 mol/L tetrabutylammonium hexafluorophosphate are selected to prepare a supporting electrolyte, then 0.05 mol/L ethyl viologen diperchlorate or ferrocene is adopted as an oxidizing or reducing agent, a silver/silver nitrate electrode is adopted as a reference electrode, and a platinum electrode is adopted as a counter electrode to form a photoelectrochemical reaction tank;
step S2: fixing the photoelectric thin film material to be detected at the bottom of the photoelectrochemical reaction tank, and sequentially connecting a three-electrode system in a scanning electrochemical microscope system with the silver/silver nitrate electrode, the platinum electrode and the working electrode of the photoelectric thin film material to be detected; meanwhile, the optical fiber microprobe is connected with the scanning electrochemical microscope moving platform to form a precise control scanning moving platform;
step S3: the scanning electrochemical microscope is precisely controlled to move, so that the optical fiber microprobe is close to the surface of the photoelectric thin film material to be detected and is kept at a distance of 2-10 micrometers;
step S4: and turning on a light source, irradiating light with certain intensity and wavelength onto the photoelectric thin film material to be detected through the optical fiber microprobe, controlling the optical fiber microprobe to scan the surface of the photoelectric thin film material to be detected at a constant speed through the scanning electrochemical microscope, and collecting micro-area photoelectrochemical reaction signals to form a photoelectrochemical signal distribution diagram of different areas.
2. A method for detecting photoelectric property of photoelectric material micro-area is characterized in that a micro-electrode probe method can be selected, and the method comprises the following steps:
step T1: acetonitrile and 0.1 mol/L tetrabutylammonium hexafluorophosphate are selected to prepare a supporting electrolyte, then 0.05 mol/L ethyl viologen diperchlorate or ferrocene is adopted as an oxidizing or reducing agent, a micro electrode is adopted as a working electrode, silver/silver nitrate is adopted as a reference electrode, and the photoelectric thin film material to be tested is adopted as a counter electrode to form a photoelectrochemical test cell;
step T2: connecting the microelectrode probe with the scanning electrochemical microscope moving platform to form a precise control scanning moving platform, and enabling the microelectrode probe to be close to the surface of the photoelectric thin film material to be detected and keep the distance between 1 and 10 micrometers through precise control movement of the scanning electrochemical microscope;
step T3: and turning on the light source, applying an oxidation or reduction potential required by a photoelectric reaction product to the working electrode of the microelectrode probe, controlling the microelectrode probe to scan on the surface of the photoelectric thin film material to be detected at a constant speed through the scanning electrochemical microscope, and collecting a micro-area photoelectrochemical reaction signal to form a photoelectrochemical signal distribution diagram of different areas.
3. The method according to claim 1 and claim 2, wherein in steps S1 and T1, C is2H3N-C16H36NPF6-C14H18Cl2N2O8The electrolyte is configured for detecting a P-type photoelectric material, and C2H3N-C16H36NPF6-C10H10The Fe electrolyte is configured for detecting N-type photoelectric materials.
4. The method for detecting the optoelectronic properties of a micro-area of an optoelectronic material as claimed in claim 1, wherein the diameter of the optical fiber probe in step S2 is 3-15 μm.
5. The method for detecting the photoelectric property of a micro-area of a photoelectric material as claimed in claim 2, wherein the diameter of the micro-electrode in the step T1 is 1-20 μm.
6. The method for detecting the photoelectric property of a micro-area of a photoelectric material as claimed in claim 5, wherein the micro-electrode of step T1 can be configured as a platinum electrode.
7. The method for detecting the photoelectric property of a micro-area of a photoelectric material as claimed in claim 6, wherein the micro-electrode in step T1 can be configured as a micro disk electrode made of silica glass coating.
8. The method according to claim 4, wherein in step S4, the micro-area photoelectrochemical reaction signal is collected by the working electrode of the optoelectronic thin film material to be detected.
9. The method for detecting the photoelectric property of a micro-area of a photoelectric material as claimed in claim 7, wherein in step T3, a micro-area photoelectrochemical reaction signal is collected by the micro-electrode.
10. The method for detecting the photoelectric property of a micro-area of a photoelectric material as claimed in claim 8 and claim 9, wherein the optical response corresponding to the micro-topography of different surfaces of the micro-area of the photoelectric film material to be detected can be measured, and the difference of the optical response of the grain boundary and different grains can be detected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010608309.4A CN111665373A (en) | 2020-06-29 | 2020-06-29 | Method for detecting photoelectric property of photoelectric material micro-area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010608309.4A CN111665373A (en) | 2020-06-29 | 2020-06-29 | Method for detecting photoelectric property of photoelectric material micro-area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111665373A true CN111665373A (en) | 2020-09-15 |
Family
ID=72390457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010608309.4A Pending CN111665373A (en) | 2020-06-29 | 2020-06-29 | Method for detecting photoelectric property of photoelectric material micro-area |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111665373A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113376230A (en) * | 2021-06-10 | 2021-09-10 | 福州大学 | Photoelectrochemical optical fiber microelectrode adopting electrode internal illumination mode and preparation method thereof |
| CN113959938A (en) * | 2021-09-29 | 2022-01-21 | 西安交通大学 | Auxiliary electrode connecting device for local electrochemical impedance test, and test system and test method based on auxiliary electrode connecting device |
| CN114878438A (en) * | 2022-03-25 | 2022-08-09 | 华东师范大学 | Photoelectric integrated detection platform inside and outside cell and construction method and application thereof |
| CN115142103A (en) * | 2022-07-01 | 2022-10-04 | 南通大学 | Micro-nano scale rapid reading and writing system and method based on glass microprobe |
| CN115561292A (en) * | 2022-09-30 | 2023-01-03 | 福州大学 | Double-electrode integrated photoelectrochemical optical fiber microelectrode and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002243619A (en) * | 2001-02-16 | 2002-08-28 | Japan Science & Technology Corp | Scanning photoelectrochemical microscope |
| US20050258042A1 (en) * | 2002-10-07 | 2005-11-24 | Gen3 Partners, Inc. | Method of manufacture of an electrode for electrochemical devices |
| CN101988913A (en) * | 2009-08-05 | 2011-03-23 | 西北师范大学 | Testing method for transfer of hydroquinone electrons on biological film |
| CN104034765A (en) * | 2014-07-07 | 2014-09-10 | 中国船舶重工集团公司第七二五研究所 | Electrochemical detection method through partial morphology scanning |
| CN104062324A (en) * | 2014-06-19 | 2014-09-24 | 中国船舶重工集团公司第七二五研究所 | Electrochemical detection device for scanning the appearance of local area |
| CN104502388A (en) * | 2014-11-19 | 2015-04-08 | 华中科技大学 | Photoelectrochemical kinetics test system and method based on scanning electrochemical microscope |
| CN106654331A (en) * | 2015-11-04 | 2017-05-10 | 天津大学 | Organic phase oxidative reduction electrolyte and application thereof in flow battery |
-
2020
- 2020-06-29 CN CN202010608309.4A patent/CN111665373A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002243619A (en) * | 2001-02-16 | 2002-08-28 | Japan Science & Technology Corp | Scanning photoelectrochemical microscope |
| US20050258042A1 (en) * | 2002-10-07 | 2005-11-24 | Gen3 Partners, Inc. | Method of manufacture of an electrode for electrochemical devices |
| CN101988913A (en) * | 2009-08-05 | 2011-03-23 | 西北师范大学 | Testing method for transfer of hydroquinone electrons on biological film |
| CN104062324A (en) * | 2014-06-19 | 2014-09-24 | 中国船舶重工集团公司第七二五研究所 | Electrochemical detection device for scanning the appearance of local area |
| CN104034765A (en) * | 2014-07-07 | 2014-09-10 | 中国船舶重工集团公司第七二五研究所 | Electrochemical detection method through partial morphology scanning |
| CN104502388A (en) * | 2014-11-19 | 2015-04-08 | 华中科技大学 | Photoelectrochemical kinetics test system and method based on scanning electrochemical microscope |
| CN106654331A (en) * | 2015-11-04 | 2017-05-10 | 天津大学 | Organic phase oxidative reduction electrolyte and application thereof in flow battery |
Non-Patent Citations (1)
| Title |
|---|
| 袁丁: "基于扫描电化学显微镜的光催化剂快速评估方法及其应用", 《中国优秀博硕士学位论文全文数据库(博士) 工程科技Ⅰ辑》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113376230A (en) * | 2021-06-10 | 2021-09-10 | 福州大学 | Photoelectrochemical optical fiber microelectrode adopting electrode internal illumination mode and preparation method thereof |
| CN113959938A (en) * | 2021-09-29 | 2022-01-21 | 西安交通大学 | Auxiliary electrode connecting device for local electrochemical impedance test, and test system and test method based on auxiliary electrode connecting device |
| CN113959938B (en) * | 2021-09-29 | 2022-12-09 | 西安交通大学 | Auxiliary electrode connecting device for local electrochemical impedance test, and test system and test method based on auxiliary electrode connecting device |
| CN114878438A (en) * | 2022-03-25 | 2022-08-09 | 华东师范大学 | Photoelectric integrated detection platform inside and outside cell and construction method and application thereof |
| CN115142103A (en) * | 2022-07-01 | 2022-10-04 | 南通大学 | Micro-nano scale rapid reading and writing system and method based on glass microprobe |
| CN115561292A (en) * | 2022-09-30 | 2023-01-03 | 福州大学 | Double-electrode integrated photoelectrochemical optical fiber microelectrode and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111665373A (en) | Method for detecting photoelectric property of photoelectric material micro-area | |
| Chen et al. | High resolution LAPS and SPIM | |
| Wilson et al. | Imaging electrogenerated chemiluminescence at single gold nanowire electrodes | |
| Wang | Imaging the chemical activity of single nanoparticles with optical microscopy | |
| Yoshinobu et al. | Recent developments of chemical imaging sensor systems based on the principle of the light-addressable potentiometric sensor | |
| Dias et al. | Electrochemistry coupled to fluorescence spectroscopy: a new versatile approach | |
| Huang et al. | Electrochemical tip-enhanced Raman spectroscopy with improved sensitivity enabled by a water immersion objective | |
| Chen et al. | Silver nanowires on coffee filter as dual-sensing functionality for efficient and low-cost SERS substrate and electrochemical detection | |
| Jan et al. | High-resolution spatially resolved visible absorption spectrometry of the electrochemical diffusion layer | |
| Zhang et al. | LAPS and SPIM imaging using ITO-coated glass as the substrate material | |
| Maruyama et al. | Fabrication and characterization of a nanometer-sized optical fiber electrode based on selective chemical etching for scanning electrochemical/optical microscopy | |
| Yang et al. | Scanning electrochemical microscopy (SECM) study of pH changes at Pt electrode surfaces in Na 2 So 4 solution (pH 4) under potential cycling conditions | |
| Hatfield et al. | Surface-enhanced raman spectroscopy-scanning electrochemical microscopy: Observation of real-time surface pH perturbations | |
| Brosseau et al. | Electrochemical surface-enhanced Raman spectroscopy | |
| CN103852502A (en) | Electrolytic tank suitable for tip enhanced Raman spectroscopy (TERS) technique as well as detection method | |
| Krause et al. | Scanning photo-induced impedance microscopy—resolution studies and polymer characterization | |
| Rosendahl et al. | Synchrotron infrared radiation for electrochemical external reflection spectroscopy: a case study using ferrocyanide | |
| CN109856142B (en) | Device and method for observing behavior of bubbles on surface of electrode | |
| Yang et al. | Ratiometric SERS detection of H2O2 and glucose using a pyrroloquinoline skeleton containing molecule as H2O2-responsive probe | |
| Macedo et al. | Multiplex infrared spectroscopy imaging for monitoring spatially resolved redox chemistry | |
| Sun et al. | Plasmonic Ag/ZnO Nanoscale Villi in Microstructure Fibers for Sensitive and Reusable Surface-Enhanced Raman Scattering Sensing | |
| Kylberg et al. | Screening of photoactive dyes on TiO2 surfaces using scanning electrochemical microscopy | |
| Dai et al. | New horizons in spectroelectrochemical measurements: optically transparent carbon electrodes | |
| Tan et al. | Light addressable potentiometric sensor with well-ordered pyramidal pits-patterned silicon | |
| Chazalviel et al. | In situ infrared spectroscopy of the semiconductor∣ electrolyte interface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200915 |