CN111654255B - Reconfigurable ultra-wideband direct/high-pass filter circuit based on GaAs material - Google Patents
Reconfigurable ultra-wideband direct/high-pass filter circuit based on GaAs material Download PDFInfo
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- CN111654255B CN111654255B CN202010447539.7A CN202010447539A CN111654255B CN 111654255 B CN111654255 B CN 111654255B CN 202010447539 A CN202010447539 A CN 202010447539A CN 111654255 B CN111654255 B CN 111654255B
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Abstract
The invention relates to the technical field of microwave circuits, and discloses a reconfigurable ultra-wideband direct connection/high-pass filter circuit based on GaAs materials. The GaAs-based FET switching tube has the function of selecting a direct connection or high-pass filter, and is in a conducting or cut-off working state through a control signal, so that the reconfiguration of functions such as direct connection or high-pass filtering is realized; the flat capacitor, the planar inductor or the high-impedance transmission line, the grounding metal through hole and the like form a basic unit of a high-pass filter circuit, and the basic unit has the function of high-pass filtering; the control signal is a GaAs-based FET switch tube control signal which plays a role in controlling the working state of the GaAs-based FET switch, so that the reconstruction of the ultra-wideband direct/high-pass filter circuit is realized. The circuit provided by the invention has the advantages of simple structure, low insertion loss, low power consumption, miniaturization, reconfiguration and the like.
Description
Technical Field
The invention relates to the technical field of microwave circuits, in particular to a reconfigurable ultra-wideband direct/high-pass filter circuit based on GaAs materials.
Background
The broadband receiver generally has the technical characteristics of instantaneous wide open, and the receiver is required to have ultra wide band, large dynamic and high sensitivity. Various clutter interferences exist in a real electromagnetic space, and various electromagnetic signals such as mobile phone communication, broadcasting, navigation, maritime satellite communication and the like exist, particularly the frequency band below 3 GHz. Due to the existence of various clutter signals, the broadband electronic warfare receiver is easily interfered by the clutter signals, so that false alarm or blockage is caused, and the performance of the receiver is influenced.
In order to reduce the influence of noise in a frequency band below 3GHz on a wideband receiver, a switching filter is generally used to improve the noise suppression performance of the receiver, and a schematic block diagram is shown in fig. 1. The specific working principle is as follows: when clutter signals of a frequency band below 3GHz in a certain space-time frequently influence the performance of the receiver, the switch is switched to a high-pass filter mode to work, clutter suppression of the frequency band below 3GHz is completed, and the performance of the receiver is improved; when the clutter of the frequency band below 3GHz in a certain space-time is less and the performance of the receiver is not influenced, the receiver works by switching to a direct-current mode through a switch, and the working bandwidth of the receiver is improved.
The clutter suppression performance of the ultra-wideband receiver can be solved by adopting a switching filter scheme, but the following defects also exist obviously:
1) By adopting a switching filter scheme, the insertion loss is large, and the noise coefficient of a receiver is influenced;
2) The adoption of the scheme of the switch filter has the defects of more used devices, larger volume, higher price and the like;
based on the above analysis, the conventional switch filter used in the ultra-wideband receiver has the disadvantages of large insertion loss, relatively high volume and price, and the like, and cannot meet the technical requirements of a new generation of wideband receiver such as low noise, miniaturization, low cost, and the like.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the existing problems, the reconfigurable ultra-wideband direct connection/high pass filter circuit based on the GaAs material is provided, and the switch circuit and the high pass filter are designed in a fusion mode, so that the reconfigurable ultra-wideband direct connection/high pass filter circuit has the technical characteristics of low insertion loss, small size, reconfigurability and the like.
The technical scheme adopted by the invention is as follows: a reconfigurable ultra-wideband through/high pass filter circuit based on GaAs materials, comprising: the basic unit and the first flat capacitor, the basic unit is in mirror symmetry cascade connection with the first flat capacitor as a center, and the first flat capacitor is connected with a first switch control element in parallel;
the basic unit at the leftmost side is connected with an input port, and the basic unit at the rightmost side is connected with an output port;
the left base unit includes: a first microstrip transmission line and a second microstrip transmission line;
one end of the first microstrip transmission line is connected with a second switch control element and a second flat capacitor, and the second switch control element is connected with the second flat capacitor in parallel; the other end of the first microstrip transmission line is connected with the second microstrip transmission line in series;
a third switch control element, an inductive element and a second grounding metal through hole are connected in parallel between the first microstrip transmission line and the second microstrip transmission line;
the third switch control element, the inductive element and the second grounding metal through hole are connected in series;
a fourth switch control element and a first grounding metal through hole are connected in parallel between the third switch control element and the inductive element;
the fourth switch control element and the first grounded metal via are connected in series.
Furthermore, the first switch control element, the second switch control element and the fourth switch control element are connected with a first control signal, and the third switch control element is connected with a second control signal.
Further, the signal level of the first control signal and the second control signal is 0/-5V, when the signal level is 0V, the switch control element is turned on, and when the signal level is-5V, the switch control element is turned off; the working states of the first control signal and the second control signal are complementary. The first control signal and the second control signal control the first to fourth switch control elements to be in a conducting or cut-off working state, so that the reconfigurable functions of direct connection or high-pass filtering and the like are realized.
Furthermore, the inductive element is a planar inductor or a high impedance transmission line.
Furthermore, the planar inductor or the high-impedance transmission line is integrated on the GaAs material substrate, the inductance of the planar inductor is determined according to the order of the high-pass filter, the passband insertion loss of the filter and the out-of-band rejection, and the line width and the length of the high-impedance transmission line are determined according to the order of the high-pass filter, the passband insertion loss of the filter and the out-of-band rejection.
Furthermore, the first switch control element, the second switch control element, the third switch control element and the fourth switch control element are all GaAs-based FET switching tubes. The GaAs-based FET switch functions as a pass-through or high-pass filter option.
Furthermore, the device parameters of the GaAs-based FET switch tube are determined by the working frequency band, the bearing power and the passband insertion loss of the formed circuit.
Furthermore, the widths of the first microstrip transmission line and the second microstrip transmission line are designed according to 50 ohm characteristic impedance, and the length is determined by the requirement of the working frequency band of the reconfigurable ultra-wideband direct-connection/high-pass filter circuit.
Furthermore, the first flat capacitor and the second flat capacitor are integrated on the GaAs material substrate by adopting flat capacitors and finger-inserted capacitor structures; the capacitance values and the structural sizes of the first flat capacitor and the second flat capacitor are determined according to the order of the high-pass filter, the insertion loss of the filter passband and the out-of-band rejection.
Furthermore, the filter order of the ultra-wideband through/high-pass filter circuit is determined by the number of the basic units, and the calculation formula of the filter order is as follows:
M＝2*N+1；
wherein M represents the filter order of the reconfigurable ultra-wideband direct/high-pass filter circuit, N represents the number of basic units in the circuit, and N is a natural number more than or equal to 2.
Compared with the prior art, the beneficial effects of adopting the technical scheme are as follows: the invention is based on GaAs semiconductor material, and integrates and designs GaAs-based FET, a plate capacitor, a planar inductor or a high-impedance transmission line, a microstrip transmission line, a grounding metal through hole and other circuits, thereby realizing a reconfigurable ultra-wideband direct-connection/high-pass filter circuit. The circuit has the advantages of simple structure, low insertion loss, low power consumption and miniaturization.
Drawings
Fig. 1 is a schematic block diagram of a conventional switching filter.
Fig. 2 is a schematic diagram of a 5-order reconfigurable ultra-wideband through/high-pass filter circuit structure of the invention.
Fig. 3 is a schematic diagram of a left basic unit structure of the reconfigurable ultra-wideband through/high-pass filter circuit structure of the invention.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
The invention provides a reconfigurable ultra-wideband through/high-pass filter circuit based on GaAs semiconductor materials, which consists of a plurality of basic units and a flat capacitor, wherein a GaAs-based FET switching tube is connected in parallel on the flat capacitor. The plurality of basic units are symmetrically cascaded from left to right by taking a flat capacitor as a center, the circuit structure of the left basic unit and the circuit structure of the right basic unit form a mirror image relationship, the leftmost basic unit is connected with an input port, and the rightmost basic unit is connected with an output port, so that a reconfigurable ultra-wideband through/high-pass filter circuit is formed.
The basic unit mainly comprises a GaAs-based FET switch tube, a flat capacitor, a planar inductor, a control signal, a microstrip transmission line and a grounding metal through hole. The microstrip transmission line has the functions of interconnecting and intercommunicating with an external application circuit for the outside and simultaneously realizes the interconnecting function among circuit elements for the inside; the GaAs-based FET switching tube has the function of direct connection or high-pass filter selection, and is in a conducting or cut-off working state through a control signal, so that the reconstruction of functions such as direct connection or high-pass filtering is realized; the flat capacitor, the planar inductor, the grounding metal through hole and the like form a basic unit of a high-pass filter circuit, and the basic unit plays a role in high-pass filtering; the control signal is a control signal of the GaAs-based FET switch tube and plays a role in controlling the working state of the GaAs-based FET switch, so that the reconstruction of the ultra-wideband direct/high-pass filter circuit is realized.
The order of the filter of the ultra-wideband through/high-pass filter circuit is mainly determined by the number of the basic units, the calculation formula of the order is as follows,
M＝2*N+1；
where M represents the order of the filter and N represents the number of elementary units.
The reconfigurable ultra-wideband through/high-pass filter circuit with a topology structure of 5 th order is described as an example, and as shown in fig. 2, the circuit mainly comprises a GaAs-based FET, a plate capacitor, a planar inductor, a microstrip transmission line, a grounded metal via, and the like.
It includes two basic units, and the basic unit on the left side includes: the planar inductor comprises a microstrip transmission line 2, a microstrip transmission line 3, a planar capacitor 1, a GaAs-based FET2, a planar inductor 1, a grounding metal through hole 2, a GaAs-based FET3 and a grounding metal through hole 1.
The right base unit includes: microstrip transmission line 4, microstrip transmission line 5, plate capacitor 3, gaAs-based FET7, gaAs-based FET5, planar inductor 2, ground metal via 4, gaAs-based FET6, and ground metal via 3.
It can be seen that the circuit structures of the left base cell and the right base cell form mirror symmetry.
The specific topology of the circuit is described as follows:
a micro-strip transmission line 1, a micro-strip transmission line 2, a micro-strip transmission line 3, a micro-strip transmission line 4, a micro-strip transmission line 5 and a micro-strip transmission line 6 are integrated on the surface of a substrate made of GaAs semiconductor material; the microstrip transmission line 1, the microstrip transmission line 2, the microstrip transmission line 3, the microstrip transmission line 4, the microstrip transmission line 5 and the microstrip transmission line 6 are connected in series in sequence.
A plate capacitor 1 and a GaAs-based FET1 are connected in series between the microstrip transmission line 1 and the microstrip transmission line 2, and the plate capacitor 1 and the GaAs-based FET1 are connected in parallel.
A GaAs-based FET2, a planar inductor 1 and a grounding metal through hole 2 are connected in parallel between the microstrip transmission line 2 and the microstrip transmission line 3, and the GaAs-based FET2, the planar inductor 1 and the grounding metal through hole 2 are connected in series.
A GaAs-based FET3 and a grounding metal through hole 1 are connected in parallel between the GaAs-based FET2 and the planar inductor 1, and the GaAs-based FET3 and the grounding metal through hole 1 are connected in series.
A plate capacitor 2 and a GaAs-based FET4 are connected in series between the microstrip transmission line 3 and the microstrip transmission line 4, and the plate capacitor 2 and the GaAs-based FET4 are connected in parallel.
A GaAs-based FET5, a planar inductor 2 and a grounding metal through hole 4 are connected in parallel between the microstrip transmission line 4 and the microstrip transmission line 5, and the GaAs-based FET5, the planar inductor 2 and the grounding metal through hole 4 are connected in series.
Between GaAs-based FET5 and planar inductor 2, gaAs-based FET6 and ground metal via 3 are connected in parallel, and between GaAs-based FET6 and ground metal via 3, a series connection is adopted.
A plate capacitor 3 and a GaAs-based FET7 are connected in series between the microstrip transmission line 5 and the microstrip transmission line 6, and the plate capacitor 3 and the GaAs-based FET7 are connected in parallel.
The microstrip transmission line 1 is an input port of the circuit, and the microstrip transmission line 6 is an output port of the circuit.
The width of the microstrip transmission lines 1-6 is designed according to the characteristic impedance of 50 ohm, and the length is determined by the requirement of the working frequency band of the reconfigurable ultra-wideband direct connection/high pass filter circuit.
The device parameters of the GaAs-based FET switching tubes 1-7 are determined by the requirements of the working frequency band, the bearing power, the passband insertion loss and the like of the circuit, the voltage of a control signal is 0V/-5V, wherein the FET switching tube is switched on when the voltage is 0V, and the FET switching tube is switched off when the voltage is-5V.
The plate capacitor 1, the plate capacitor 2 and the plate capacitor 3 are integrated on the substrate made of GaAs materials by adopting a plate capacitor and an interpolation capacitor structure, and the specific capacitance value and the structure size can be determined according to indexes such as the order of a high-pass filter, the pass-band insertion loss of the filter, out-of-band rejection and the like.
The planar inductors 1-2 are integrated on the GaAs material substrate, and the inductance of the planar inductors can be determined according to indexes such as the order of a high-pass filter, the insertion loss of a filter passband, out-of-band rejection and the like.
The grounding metal through holes 1-4 are integrated on the GaAs material substrate, and the reconfigurable ultra wide band 5-order direct/high pass filter circuit arranged on the GaAs material substrate is connected and conducted with the grounding metal layer of the GaAs material substrate; the specific aperture size can be determined by the microelectronic process of the GaAs material.
The control signals 1-2 are control signals of a GaAs-based FET switching tube, the signal level is 0/-5V, and the working states of the control signal 1 and the control signal 2 are complementary.
The specific working principle is described as follows:
1) When a low-frequency band clutter interference signal needs filtering processing, the switch control signal 1 controls the GaAs-based FET1, the GaAs-based FET3, the GaAs-based FET4, the GaAs-based FET6 and the GaAs-based FET7 to work in a cut-off state, a GaAs-based FET switch tube core in the cut-off state is equivalent to a very small capacitor (less than 0.1 PF), the switch control signal 2 controls the GaAs-based FET2 and the GaAs-based FET5 to work in a conducting state, a GaAs-based FET switch tube core in the conducting state is equivalent to a very small resistor (less than 2 ohm), and at the moment, the reconfigurable ultra-wideband direct-connection/high-pass filter circuit of the GaAs material works in a high-pass filter state;
2) When the low-frequency band clutter interference signal does not need filtering processing, the switch control signal 1 controls the GaAs-based FET1, the GaAs-based FET3, the GaAs-based FET4, the GaAs-based FET6 and the GaAs-based FET7 to work in a conducting state, the GaAs-based FET switch tube core in the conducting state is equivalent to a very small resistance (less than 2 ohm), the switch control signal 2 controls the GaAs-based FET2 and the GaAs-based FET5 to work in a cut-off state, the GaAs-based FET switch tube core in the cut-off state is equivalent to a very small capacitance (less than 0.1 PF), and at the moment, the reconfigurable ultra-wideband direct-connection/high-pass filter circuit of the GaAs material works in a direct-connection state.
Based on the working principle analysis, the reconfigurable ultra-wideband direct connection/high-pass filter circuit adopts the integrated fusion design of the switch control element and the filter circuit, can realize the reconfiguration of two working states of the high-pass filter and the direct connection, and has the technical characteristics of low differential loss, miniaturization, low cost and the like.
Example 2
On the basis of embodiment 1, it is preferable that a high-impedance transmission line be used instead of the planar inductor, and the line width and length of the high-impedance transmission line can be determined according to indexes such as the order of the high-pass filter, the insertion loss of the filter passband, and the out-of-band rejection.
The circuit of the invention carries out principle verification in the 0.8-18 GHz ultra-wideband receiving channel, and the ultra-wideband receiving channel can work in a 2.7-18 GHz (high-pass filtering mode) frequency band or a 0.8-18 GHz frequency band (direct mode) optionally through a control signal; the insertion loss is less than 1dB when the filter is directly operated, the insertion loss of a pass band is less than 1.5dB when the filter is in a high-pass filtering mode, the suppression at a sideband 2GHz is more than 20dBc, and the suppression at a sideband 0.8GHz is more than 35dBc.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification, and to any novel method or process steps or any novel combination of steps disclosed. Those skilled in the art to which the invention pertains will appreciate that insubstantial changes or modifications can be made without departing from the spirit of the invention as defined by the appended claims.
Claims (10)
1. A reconfigurable ultra-wideband through/high pass filter circuit based on GaAs materials, comprising: the basic unit is provided with a first flat capacitor at the center, the basic unit takes the first flat capacitor as the center and is in mirror symmetry cascade connection with the left and the right, and a first switch control element is connected to the first flat capacitor in parallel;
the first flat capacitor comprises on the left side: a first microstrip transmission line and a second microstrip transmission line;
one end of the first microstrip transmission line is connected with a second switch control element and a second flat capacitor, and the second switch control element is connected with the second flat capacitor in parallel; the other end of the first microstrip transmission line is connected with the second microstrip transmission line in series;
a third switch control element, an inductive element and a second grounding metal through hole are connected in parallel between the first microstrip transmission line and the second microstrip transmission line;
the third switch control element, the inductive element and the second grounding metal through hole are connected in series;
a fourth switch control element and a first grounding metal through hole are connected in parallel between the third switch control element and the inductive element;
the fourth switch control element and the first grounded metal via are connected in series.
2. The reconfigurable ultra-wideband pass-through/high-pass filter circuit based on GaAs material of claim 1, wherein a first control signal is connected to the first switch control element, a second control signal is connected to the second switch control element, and a second control signal is connected to the third switch control element.
3. The reconfigurable ultra-wideband through/high-pass filter circuit based on GaAs material of claim 2, wherein the first control signal and the second control signal have a signal level of 0/-5V, the switch control element is turned on when the signal level is 0V, and the switch control element is turned off when the signal level is-5V; the working states of the first control signal and the second control signal are complementary.
4. A reconfigurable ultra-wideband pass-through/high-pass filter circuit based on GaAs materials according to any of claims 1-3, wherein the inductive element is selected from planar inductors or high impedance transmission lines.
5. The reconfigurable ultra-wideband through/high-pass filter circuit based on GaAs material of claim 4, wherein the planar inductor or the high-impedance transmission line is integrated on the GaAs material substrate, an inductance of the planar inductor is determined according to an order of the high-pass filter, a passband insertion loss of the filter and an out-of-band rejection, and a line width and a length of the high-impedance transmission line are determined according to the order of the high-pass filter, the passband insertion loss of the filter and the out-of-band rejection.
6. A reconfigurable ultra-wideband pass-through/high-pass filter circuit based on GaAs materials according to any of claims 1-3, wherein the first switch control element, the second switch control element, the third switch control element, and the fourth switch control element are GaAs-based FET switching tubes.
7. The reconfigurable ultra-wideband direct/high pass filter circuit based on GaAs material as claimed in claim 6, wherein the device parameters of the GaAs based FET switch tube are determined by the working frequency band, the bearing power and the pass band insertion loss of the circuit.
8. The reconfigurable ultra-wideband through/high-pass filter circuit based on GaAs material of any of claims 1-3, wherein the width of the first microstrip transmission line and the second microstrip transmission line is designed according to the characteristic impedance of 50 ohm, and the length is determined by the requirement of the operational frequency band of the reconfigurable ultra-wideband through/high-pass filter circuit.
9. The reconfigurable ultra-wideband direct/high pass filter circuit based on GaAs material of any of claims 1-3, wherein the first plate capacitor and the second plate capacitor are integrated on the GaAs material substrate by adopting a plate capacitor and finger-inserted capacitor structure; the capacitance values and the structural sizes of the first flat capacitor and the second flat capacitor are determined according to the order of the high-pass filter, the pass-band insertion loss of the filter and the out-of-band rejection.
10. The reconfigurable ultra-wideband through/high-pass filter circuit based on GaAs material of any of claims 1-3, wherein the filter order of the ultra-wideband through/high-pass filter circuit is determined by the number of basic units, and the calculation formula of the filter order is as follows:
M＝2*N+1；
wherein M represents the filter order of the reconfigurable ultra-wideband through/high-pass filter circuit, N represents the number of basic units in the circuit, and N is a natural number more than or equal to 2.
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| CN112467322B (en) * | 2020-11-12 | 2024-06-28 | 南京国博电子股份有限公司 | Ultra-wideband and wide stop band-pass filter based on IPD technology |
| CN113300682B (en) * | 2021-06-03 | 2022-05-17 | 中国电子科技集团公司第二十九研究所 | Reconfigurable amplitude limiting and attenuation integrated circuit and working method thereof |
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