CN111653477A - Method and system for forming yttrium oxide film - Google Patents

Method and system for forming yttrium oxide film Download PDF

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Publication number
CN111653477A
CN111653477A CN202010388565.7A CN202010388565A CN111653477A CN 111653477 A CN111653477 A CN 111653477A CN 202010388565 A CN202010388565 A CN 202010388565A CN 111653477 A CN111653477 A CN 111653477A
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China
Prior art keywords
dry etching
film
yttrium oxide
etching
yttria
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CN202010388565.7A
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Chinese (zh)
Inventor
周娜
高建峰
李俊杰
杨涛
李俊峰
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Institute of Microelectronics of CAS
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Institute of Microelectronics of CAS
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Priority to CN202010388565.7A priority Critical patent/CN111653477A/en
Publication of CN111653477A publication Critical patent/CN111653477A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02334—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment in-situ cleaning after layer formation, e.g. removing process residues
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Abstract

The application relates to the technical field of semiconductors, in particular to a method and a system for forming an yttrium oxide film, wherein the yttrium oxide film is formed on a substrate, and the method comprises the following steps: patterning the yttrium oxide film; carrying out at least one etching process; the etching process comprises the following steps: carrying out anisotropic dry etching on the yttrium oxide film by adopting chlorine-containing gas; carrying out wet processing; and (5) drying.

Description

Method and system for forming yttrium oxide film
Technical Field
The application relates to the technical field of semiconductors, in particular to a method and a system for forming an yttrium oxide film.
Background
Ferroelectric RAM (FRAM) is a random access memory that combines the fast read and write access performance of Dynamic Random Access Memory (DRAM) with the ability to retain data after power is turned off (like other stable memory devices such as read only memory and flash memory). Because it can be stored quickly with very low power requirements, it is expected to find wide application in consumer small devices such as Personal Digital Assistants (PDAs), cell phones, power meters, smart cards, and security systems.
In ferroelectric memories, the low dielectric constant (about 3.9) of silicon oxide as an insulating layer has not been able to meet the requirements of devices, so the use of higher dielectric constant materials is the key point of device research. Among the numerous high dielectric materials, Y2O3The material has a very high dielectric constant (about 18), excellent chemical stability and good affinity for oxygen. These characteristics let Y2O3The material has great potential in the application of ferroelectric memory. However, Y2O3The method is a film material which is extremely difficult to etch, and how to perform accurate anisotropic etching on the film material is a great problem to be faced at present.
Disclosure of Invention
The present application addresses, at least to some extent, the above-mentioned technical problems in the related art. Therefore, the application provides a method and a system for forming the yttrium oxide film, and the accurate anisotropic etching of the yttrium oxide film is realized.
In order to achieve the above object, a first aspect of the present application provides a method for forming a yttrium oxide thin film formed on a substrate, comprising the steps of:
patterning the yttrium oxide film;
carrying out at least one etching process; the etching process comprises the following steps:
carrying out anisotropic dry etching on the yttrium oxide film by adopting chlorine-containing gas; carrying out wet processing; and (5) drying.
A second aspect of the present application provides a system for etching a yttria thin film, comprising:
the first pre-vacuum chamber is used for placing the graphical yttrium oxide film wafer;
the calibrator is used for positioning the patterned yttrium oxide thin film wafer;
the first transmission device is used for transmitting the positioned wafer into the dry etching cavity;
the dry etching cavity is used for carrying out anisotropic dry etching on the positioned wafer by adopting chlorine-containing gas;
the second transmission device is used for transmitting the wafer which is subjected to the anisotropic dry etching into the wet cleaning and spin-drying cavity;
the wet cleaning and spin-drying cavity is used for removing and spin-drying the yttrium chloride film generated on the surface of the yttrium oxide film;
and the third transmission device is used for transferring the wafer which is cleaned and dried into the second pre-vacuumizing chamber to be taken out.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a flow chart illustrating a method of forming a yttria film in one embodiment of the present application;
FIG. 2 is a schematic view showing a structure after an yttrium oxide thin film is formed on a substrate;
FIG. 3 shows a schematic of the structure of FIG. 2 after patterning a yttria film thereon;
FIG. 4 shows a schematic view of the structure after anisotropic dry etching on the structure shown in FIG. 3;
FIG. 5 is a schematic diagram showing the structure of FIG. 4 after the etching position of the yttrium oxide film is washed away and the yttrium chloride film is formed on the surface of the photoresist;
FIG. 6 is a schematic diagram showing the structure of FIG. 5 after etching of a yttrium oxide film using a chlorine-containing gas;
FIG. 7 is a schematic diagram showing the structure of FIG. 6 after the etching position of the yttrium oxide film is washed away and the yttrium chloride film is formed on the surface of the photoresist;
FIG. 8 is a schematic diagram showing the structure of FIG. 7 after removal of the photoresist on the yttria film;
FIG. 9 is a schematic diagram showing the structure of an etching system for etching a yttrium oxide thin film according to an embodiment of the present application.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Referring to fig. 1-2, a first aspect of the present application provides a method for forming a yttria film, in which a magnetron sputtering, an atomic layer deposition or an electron beam evaporation reoxidation method is used to form a yttria film 11 on a substrate 10, and specifically, the substrate 10 may be monocrystalline silicon, but the present embodiment is not limited thereto, and the substrate 10 may also be a bulk silicon semiconductor substrate, a silicon-on-insulator (SOI) semiconductor substrate, a germanium-on-insulator (GOI) semiconductor substrate, a silicon germanium semiconductor substrate, a III-V compound semiconductor substrate or an epitaxial thin film semiconductor substrate obtained by performing Selective Epitaxial Growth (SEG).
In this embodiment, the method for forming the yttria film includes the following steps:
the yttria film 11 is patterned using a process of direct lithography or electron beam lithography, and specifically, as shown in fig. 3, in the present embodiment, the yttria film 11 is patterned using a process of direct lithography, that is, a photoresist 12 is formed on the surface of the yttria film 11 to expose an etching position of the yttria film 11.
Next, as shown in fig. 4, the yttrium oxide film 11 is subjected to anisotropic dry etching using a chlorine-containing gas, and specifically, the chlorine-containing gas reacts with the yttrium oxide film 11 to form a yttrium chloride film 13 at the etching position of the yttrium oxide film 11 and on the surface of the photoresist 12.
And placing the yttrium oxide film to be subjected to anisotropic dry etching in a dry etching cavity, wherein the pressure in the dry etching cavity is 1-100mT, the power range of an upper electrode in the dry etching cavity is 100-5000W, and the power of a lower electrode in the dry etching cavity is 0-1000W.
Preferably, the upper electrode power of the dry etching apparatus is in the range of 500-2500W, too low upper electrode power is not favorable for the ionization of the chlorine-containing gas, and too high upper electrode power cannot increase the concentration of the chlorine plasma, which results in energy waste.
Preferably, the lower electrode power of the dry etching device is 0-500W, and too high lower electrode power can cause too high energy of reaction particles, thereby causing damage to the substrate.
In addition, chlorine-containing gases include chlorine-based gases and assist gases that can alter the concentration and distribution of the etching gas within the dry etch chamber, thereby affecting etch rate and uniformity. Specifically, the auxiliary gas is selected from He, Ar, BCl3Or N2The chlorine-based gas is selected from Cl2、CCl4Or SiCl4And controlling the speed of anisotropic dry etching of the yttrium oxide film to be 0.5-50 nm/min.
Then, as shown in fig. 5, the etching position of the yttria thin film 11 and the yttrium chloride thin film formed on the surface of the photoresist 12 are soaked in deionized water, and then the etching position of the yttria thin film 11 and the surface of the photoresist 12 are cleaned by deionized water to form the yttrium chloride thin film 13, and then the yttrium chloride thin film is dried by spin-drying.
Next, as shown in fig. 6-7, the etching process shown in fig. 4-5 is cycled for a plurality of times, specifically, in this embodiment, the etching process shown in fig. 4-5 is performed for 2 times, that is, the etching of the yttria film 11 is continued by using the chlorine-containing gas, and the etching position of the yttria film 11 and the surface of the photoresist 12 are cleaned by using the deionized water to form the yttria film 13, and then the yttrium chloride film 13 is dried until the yttria film 11 is etched to the target depth.
It should be noted that, in some embodiments of the present application, the etching process shown in fig. 4-5 may be performed 1 time to etch the yttria film 11 to the target depth, and of course, the etching process may be performed 2, 3, 4 times, etc. to etch the yttria film 11 to the target depth, which may be flexibly selected by a person skilled in the art according to needs.
Next, as shown in fig. 8, the photoresist 12 on the yttria film 11 is removed, i.e., the etching of the yttria film 11 is completed.
A second aspect of the present application provides an etching system for an yttria thin film formed on a substrate, as shown in fig. 9, the etching system 200 for an yttria thin film comprising:
a first pre-vacuum chamber 20 for placing the patterned yttrium oxide thin film wafer; the calibrator 21 is used for positioning the patterned yttrium oxide thin film wafer; the first vacuum/atmosphere transmission device 22 is used for transmitting the positioned wafer into the dry etching cavity; a dry etching chamber 23 for performing anisotropic dry etching on the positioned wafer by using chlorine-containing gas; the second vacuum/atmosphere transmission device 24 is used for transmitting the device which completes the anisotropic dry etching into the wet cleaning and drying cavity; the wet cleaning and spin-drying cavity 25 is used for removing and spin-drying the yttrium chloride film generated on the surface of the yttrium oxide film; a third vacuum/atmospheric transfer device 26 for transferring the spin-cleaned wafer back to the second pre-evacuation chamber 27 for removal. And a robot 28 for gripping the wafers in the first pre-vacuum chamber 20, the aligner 21, and the second pre-vacuum chamber 27.
In the etching system in this embodiment, the dry etching chamber 23 and the wet cleaning spin-drying chamber 25 are integrated on one platform, so that the yttrium oxide film can be circularly subjected to dry etching and wet cleaning spin-drying processes, thereby ensuring accurate anisotropic etching.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (13)

1. A method for forming an yttrium oxide film, comprising the steps of:
patterning the yttrium oxide film;
carrying out at least one etching process; the etching process comprises the following steps:
carrying out anisotropic dry etching on the yttrium oxide film by adopting chlorine-containing gas;
carrying out wet processing; and (5) drying.
2. The method of claim 1, wherein the etching process is cycled a plurality of times.
3. The method of claim 1, wherein the wet processing comprises soaking followed by cleaning.
4. The method of claim 1, wherein the process for patterning the yttria film is selected from direct lithography or electron beam lithography, and the photoresist is removed after the etching process is completed.
5. The method of claim 1, wherein the chlorine-containing gas comprises an assist gas and a chlorine-based gas.
6. The method according to claim 5, wherein the auxiliary gas is selected from He, Ar, BCl3Or N2The chlorine-based gas is selected from Cl2、CCl4Or SiCl4。
7. The method of claim 1, wherein the rate of anisotropic dry etching of the yttria film is controlled to be in the range of 0.5 nm/min to 50 nm/min.
8. The method for forming an yttria film as claimed in claim 1, wherein the yttria film to be subjected to anisotropic dry etching is placed in a dry etching chamber, wherein the pressure in the dry etching chamber is 1-100mT, the power of an upper electrode in the dry etching chamber is in a range of 100-5000W, and the power of a lower electrode in the dry etching chamber is in a range of 0-1000W.
9. The method as claimed in claim 8, wherein the power of the upper electrode of the dry etching apparatus is in the range of 500-2500W, and the power of the lower electrode of the dry etching apparatus is in the range of 0-500W.
10. The method of claim 1, wherein the drying step comprises spin-drying.
11. The method of forming an yttria film according to any one of claims 1 to 10, wherein the yttria film is formed on the substrate by magnetron sputtering, atomic layer deposition or electron beam evaporation reoxidation.
12. An yttria film etching system, comprising:
the first pre-vacuum chamber is used for placing the graphical yttrium oxide film wafer;
the calibrator is used for positioning the patterned yttrium oxide thin film wafer;
the first transmission device is used for transmitting the positioned wafer into the dry etching cavity;
the dry etching cavity is used for carrying out anisotropic dry etching on the positioned wafer by adopting chlorine-containing gas;
the second transmission device is used for transmitting the wafer which is subjected to the anisotropic dry etching into the wet cleaning and spin-drying cavity;
the wet cleaning and spin-drying cavity is used for removing and spin-drying the yttrium chloride film generated on the surface of the yttrium oxide film;
and the third transmission device is used for transferring the wafer which is cleaned and dried into the second pre-vacuumizing chamber to be taken out.
13. The yttria thin film etching system of claim 12, further comprising:
and the manipulator is used for clamping the wafers to be processed in the first pre-vacuumizing chamber, the calibrator and the second pre-vacuumizing chamber.
CN202010388565.7A 2020-05-09 2020-05-09 Method and system for forming yttrium oxide film Pending CN111653477A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356575A (en) * 2003-05-30 2004-12-16 Semiconductor Leading Edge Technologies Inc Manufacturing method of semiconductor device
JP2006086377A (en) * 2004-09-16 2006-03-30 Hitachi High-Technologies Corp Plasma processing method
US20080096374A1 (en) * 2006-10-23 2008-04-24 Interuniversitair Microelektronica Centrum (Imec) Selective removal of rare earth based high-k materials in a semiconductor device
JP5437492B2 (en) * 2010-11-22 2014-03-12 株式会社アルバック Memory device manufacturing apparatus and manufacturing method
CN105555684A (en) * 2013-11-22 2016-05-04 株式会社岛津制作所 Substrate processing system
CN108298573A (en) * 2018-04-13 2018-07-20 上海泰坦科技股份有限公司 A kind of preparation method of anhydrous yttrium chloride

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004356575A (en) * 2003-05-30 2004-12-16 Semiconductor Leading Edge Technologies Inc Manufacturing method of semiconductor device
JP2006086377A (en) * 2004-09-16 2006-03-30 Hitachi High-Technologies Corp Plasma processing method
US20080096374A1 (en) * 2006-10-23 2008-04-24 Interuniversitair Microelektronica Centrum (Imec) Selective removal of rare earth based high-k materials in a semiconductor device
JP5437492B2 (en) * 2010-11-22 2014-03-12 株式会社アルバック Memory device manufacturing apparatus and manufacturing method
CN105555684A (en) * 2013-11-22 2016-05-04 株式会社岛津制作所 Substrate processing system
CN108298573A (en) * 2018-04-13 2018-07-20 上海泰坦科技股份有限公司 A kind of preparation method of anhydrous yttrium chloride

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