CN111646792B - 一种bme多层陶瓷电容器、bme瓷介电容器陶瓷材料及制备方法 - Google Patents
一种bme多层陶瓷电容器、bme瓷介电容器陶瓷材料及制备方法 Download PDFInfo
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- CN111646792B CN111646792B CN202010573084.3A CN202010573084A CN111646792B CN 111646792 B CN111646792 B CN 111646792B CN 202010573084 A CN202010573084 A CN 202010573084A CN 111646792 B CN111646792 B CN 111646792B
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 72
- 239000000919 ceramic Substances 0.000 title claims abstract description 66
- 239000003990 capacitor Substances 0.000 title claims abstract description 64
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 92
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 92
- 238000005245 sintering Methods 0.000 claims abstract description 54
- 239000002994 raw material Substances 0.000 claims abstract description 31
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims abstract description 17
- GYIWFHXWLCXGQO-UHFFFAOYSA-N barium(2+);ethanolate Chemical compound [Ba+2].CC[O-].CC[O-] GYIWFHXWLCXGQO-UHFFFAOYSA-N 0.000 claims abstract description 16
- OGUCKKLSDGRKSH-UHFFFAOYSA-N oxalic acid oxovanadium Chemical compound [V].[O].C(C(=O)O)(=O)O OGUCKKLSDGRKSH-UHFFFAOYSA-N 0.000 claims abstract description 16
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 claims abstract description 13
- 239000001639 calcium acetate Substances 0.000 claims abstract description 13
- 229960005147 calcium acetate Drugs 0.000 claims abstract description 13
- 235000011092 calcium acetate Nutrition 0.000 claims abstract description 13
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 claims abstract description 13
- 229940069446 magnesium acetate Drugs 0.000 claims abstract description 13
- 235000011285 magnesium acetate Nutrition 0.000 claims abstract description 13
- 239000011654 magnesium acetate Substances 0.000 claims abstract description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims abstract description 12
- 229940071125 manganese acetate Drugs 0.000 claims abstract description 12
- UOGMEBQRZBEZQT-UHFFFAOYSA-L manganese(2+);diacetate Chemical compound [Mn+2].CC([O-])=O.CC([O-])=O UOGMEBQRZBEZQT-UHFFFAOYSA-L 0.000 claims abstract description 12
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 9
- -1 rare earth acetate Chemical class 0.000 claims abstract description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 176
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 132
- 239000000654 additive Substances 0.000 claims description 49
- 230000000996 additive effect Effects 0.000 claims description 49
- 238000000498 ball milling Methods 0.000 claims description 34
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 claims description 33
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 33
- 238000005266 casting Methods 0.000 claims description 33
- 239000002270 dispersing agent Substances 0.000 claims description 33
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 33
- 239000002002 slurry Substances 0.000 claims description 33
- 238000001816 cooling Methods 0.000 claims description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 22
- 238000005238 degreasing Methods 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 12
- 239000002253 acid Substances 0.000 claims description 11
- 229910052788 barium Inorganic materials 0.000 claims description 11
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 11
- 150000002148 esters Chemical class 0.000 claims description 11
- 238000002156 mixing Methods 0.000 claims description 11
- 238000005303 weighing Methods 0.000 claims description 11
- 239000010953 base metal Substances 0.000 claims description 9
- OSCVBYCJUSOYPN-UHFFFAOYSA-K ytterbium(3+);triacetate Chemical compound [Yb+3].CC([O-])=O.CC([O-])=O.CC([O-])=O OSCVBYCJUSOYPN-UHFFFAOYSA-K 0.000 claims description 9
- WQXKGOOORHDGFP-UHFFFAOYSA-N 1,2,4,5-tetrafluoro-3,6-dimethoxybenzene Chemical compound COC1=C(F)C(F)=C(OC)C(F)=C1F WQXKGOOORHDGFP-UHFFFAOYSA-N 0.000 claims description 8
- BONORRGKLJBGRV-UHFFFAOYSA-N methapyrilene hydrochloride Chemical compound Cl.C=1C=CC=NC=1N(CCN(C)C)CC1=CC=CS1 BONORRGKLJBGRV-UHFFFAOYSA-N 0.000 claims description 5
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- WYOIGGSUICKDNZ-UHFFFAOYSA-N 2,3,5,6,7,8-hexahydropyrrolizin-1-one Chemical compound C1CCC2C(=O)CCN21 WYOIGGSUICKDNZ-UHFFFAOYSA-N 0.000 claims description 3
- BYDYILQCRDXHLB-UHFFFAOYSA-N 3,5-dimethylpyridine-2-carbaldehyde Chemical compound CC1=CN=C(C=O)C(C)=C1 BYDYILQCRDXHLB-UHFFFAOYSA-N 0.000 claims description 3
- VGBWDOLBWVJTRZ-UHFFFAOYSA-K cerium(3+);triacetate Chemical compound [Ce+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VGBWDOLBWVJTRZ-UHFFFAOYSA-K 0.000 claims description 3
- LYQGMALGKYWNIU-UHFFFAOYSA-K gadolinium(3+);triacetate Chemical compound [Gd+3].CC([O-])=O.CC([O-])=O.CC([O-])=O LYQGMALGKYWNIU-UHFFFAOYSA-K 0.000 claims description 3
- JLRJWBUSTKIQQH-UHFFFAOYSA-K lanthanum(3+);triacetate Chemical compound [La+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JLRJWBUSTKIQQH-UHFFFAOYSA-K 0.000 claims description 3
- JPDBEEUPLFWHAJ-UHFFFAOYSA-K samarium(3+);triacetate Chemical compound [Sm+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JPDBEEUPLFWHAJ-UHFFFAOYSA-K 0.000 claims description 3
- JQBILSNVGUAPMM-UHFFFAOYSA-K terbium(3+);triacetate Chemical compound [Tb+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JQBILSNVGUAPMM-UHFFFAOYSA-K 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 238000009413 insulation Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
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Abstract
一种BME多层陶瓷电容器、BME瓷介电容器陶瓷材料及制备方法,一种BME瓷介电容器陶瓷材料,包括以下原料:钛酸钡、乙酸锰、乙酸镁、草酸氧钒、稀土乙酸盐、乙醇钡、乙酸钙、正硅酸乙酯,通过限定陶瓷原料的组成,以钛酸钡为基础,引入草酸氧钒、正硅酸乙酯与钛酸钡、乙酸盐、乙醇钡配合,在烧结时形成良好的“壳‑芯”结构,获得2500‑3000的高介电常数的同时,使电容温度变化率保持在±15%范围内。
Description
技术领域
本发明属于多层陶瓷电容器制备领域,具体涉及一种BME多层陶瓷电容器、BME瓷介电容器陶瓷材料及制备方法。
背景技术
随着电子产品小型化、多功能化的发展,表面贴装技术得到了广泛的应用与发展。多层陶瓷电容器(Multilayer Ceramic Capacitor)简称MLCC,是表面贴装技术中应用最广泛的一类片式元器件之一。伴随着尺寸更小、性能更高的电子设备日益增长的需求,对多层陶瓷电容器在更小体积、更大容量、更高可靠性以及更低成本等方面提出了更高的要求。
多层陶瓷电容器采用流延-共烧工艺,通过流延、印刷、叠压将电极层与介电层相互叠加,再通过脱脂、烧结、端电极,从而制成多层陶瓷电容器。传统的多层陶瓷电容器采用钯或钯银合金等贵金属作为内电极,生产成本高。为降低成本,可以通过采用镍、铜等贱金属替代贵金属作为内电极。由于贱金属在空气气氛中烧结会发生氧化,所以需要再还原性气氛下进行烧制。另一方面,纯钛酸钡材料在还原气氛下烧结会被还原,发生半导体化,导致绝缘电阻降低,所以要在钛酸钡中加入锰、镁、稀土等元素以使陶瓷材料适合于还原气氛中烧结,得到高绝缘电阻和高可靠性的多层陶瓷电容器。
更高的介电常数、更薄的介质层厚度有利于多层陶瓷电容器的小型化、大容量化。因此,如何得到具有良好电容温度特性、高介电常数、低损耗,同时具备抗还原特性,且适合于超薄介质层多层陶瓷电容器制造的介电陶瓷材料,是研究的方向。在美国专利US20040229746A1中,配方体系为BaTiO3-Mn3O4-Y2O3-Ho2O3-CaCO3-SiO2-B2O3-Al2O3-MgO-CaO,在1200℃~1300℃还原气氛下烧结,但其陶瓷晶粒尺寸大于500nm,不适用于超薄介质层贱金属多层陶瓷电容器的制造。因此,如何更加均匀、高效地进行掺杂,获得具有超细晶粒、粒度均匀且性能优异的介电陶瓷材料,并能应用于贱金属、超薄介质层、大容量的多层陶瓷电容器是本发明所要解决的问题。
发明内容
本发明的目的是克服现有技术的缺点,提供一种BME多层陶瓷电容器、BME瓷介电容器陶瓷材料及制备方法。
本发明采用如下技术方案:
一种BME瓷介电容器陶瓷材料,包括以下重量份的原料:钛酸钡100份、乙酸锰0.15-0.3份、乙酸镁0.3-1.0份、草酸氧钒0.01-0.04份、稀土乙酸盐1.0-5.0份、乙醇钡0.5-1.5份、乙酸钙0.3-1.0份、正硅酸乙酯1.0-3.0份。
进一步的,所述稀土乙酸盐选自乙酸钇、乙酸镧、乙酸铈、乙酸镨、乙酸钕、乙酸钐、乙酸钆、乙酸铽、乙酸镝、乙酸钬、乙酸饵和乙酸镱中的一种或多种。
进一步的,所述钛酸钡的粒度小于500nm。
一种BME多层陶瓷电容器,采用以上任一项所述的陶瓷材料制成。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨1-4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:5-20:5-20;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨4-24h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:15-35:15-35:0.5-2;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨4-24h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:3-10:5-20;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度≦15um;
步骤六,将贱金属内极印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:对生坯进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:30-70,同时加湿,在1200-1320℃保温1-4h;然后降温至800-1000℃回氧,氧气含量5-20ppm,保温2-6h;再冷却至室温;
步骤九,端外电极工艺:外电极材质为铜,烧附温度为700-900℃,采用氮气保护,保温0.5-2h,冷却后,即得到BME瓷介电容器陶瓷材料。
进一步的,所述步骤七中,生坯脱脂的环境为:270℃的空气气氛下,保温4h。
进一步的,所述贱金属内极为镍金属内极。
由上述对本发明的描述可知,与现有技术相比,本发明的有益效果是:
第一,通过限定陶瓷原料的组成,以钛酸钡为基础,引入草酸氧钒、正硅酸乙酯与钛酸钡、乙酸盐、乙醇钡配合,在烧结时形成良好的“壳-芯”结构,获得2500-3000的高介电常数的同时,使电容温度变化率保持在±15%范围内;草酸氧钒与其他乙酸盐原料配合,还可调节TCC,降低损耗;正硅酸乙酯与其他乙酸盐原料配合,还可调节TCC,促进陶瓷材料的烧结,提高致密性,提高BDV;
第二,制备时,限定各原料的球磨顺序和时间,将除钛酸钡以外的原料先溶解于有机溶剂中,使添加的各元素分布均匀,烧结形成良好的“壳-芯”结构;
第三,生坯在烧结之前先进行脱脂,以排出加入的有机物,同时使有机盐添加剂进行裂解,使添加的各元素分散更加均匀,再经两段式烧结,使添加物形成均匀分散的纳米级氧化物,烧结形成良好的的“壳-芯”结构,以获得获得2500-3000的高介电常数的同时,使电容温度变化率保持在±15%范围内;
第四,添加乙酸锰,能够在烧结过程中有效阻止Ti4+的还原,降低损耗、提高绝缘电阻;添加乙酸镁及稀土乙酸盐,可以在介电材料中进行施主和受主掺杂,同时形成“壳-芯”结构,得到平稳的介温特性曲线;添加乙醇钡、乙酸钙与正硅酸乙酯配合,有利于提高瓷介瓷体的致密度,降低损耗。
附图说明
图1为本发明提供的瓷介电容器陶瓷材料组织结构示意图;
图2为本发明提供的MLCC内部结构示意图;
图3为实施例1样品介电常数随温度变化曲线;
图4为实施例1样品电容温度变化率随温度变化曲线;
图中,1-陶瓷材料、2-镍金属内极、3-铜外电极。
具体实施方式
以下通过具体实施方式对本发明作进一步的描述。
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.15-0.3份、乙酸镁0.3-1.0份、草酸氧钒0.01-0.04份、稀土乙酸盐1.0-5.0份、乙醇钡0.5-1.5份、乙酸钙0.3-1.0份、正硅酸乙酯1.0-3.0份。
其中,稀土乙酸盐选自乙酸钇、乙酸镧、乙酸铈、乙酸镨、乙酸钕、乙酸钐、乙酸钆、乙酸铽、乙酸镝、乙酸钬、乙酸饵和乙酸镱中的一种或多种。
钛酸钡的粒度小于500nm。
通过限定BME瓷介电容器陶瓷材料的组成,以钛酸钡为基础,引入草酸氧钒、正硅酸乙酯与钛酸钡、乙酸盐配合,在烧结时形成良好的“壳-芯”结构,获得2500-3000的高介电常数的同时,使电容温度变化率保持在±15%范围内;草酸氧钒与其他乙酸盐原料配合,还可调节TCC,降低损耗;正硅酸乙酯与其他乙酸盐原料配合,还可调节TCC,促进陶瓷材料的烧结,提高致密性,提高BDV。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨1-4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:5-20:5-20;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨4-24h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:15-35:15-35:0.5-2;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨4-24h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:3-10:5-20;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度≦15um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:30-70,同时加湿,在1200-1320℃保温1-4h;然后降温至800-1000℃回氧,氧气含量5-20ppm,保温2-6h;再冷却至室温;
步骤九,端外电极工艺:外电极材质为铜,烧附温度为700-900℃,采用氮气保护,保温0.5-2h,冷却后,即得到BME瓷介电容器陶瓷材料。
实施例1
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、草酸氧钒0.03份、乙酸镱1.5份、乙酸镝0.36份、乙醇钡1.14份、乙酸钙0.79份、正硅酸乙酯2.43份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度位10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1250℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
参照图3样品介电常数随温度变化曲线及图4样品电容温度变化率随温度变化曲线可知,样品具有高介电常数(2500~3000),低损耗(<1.5%),在工作温度范围(-55℃~125℃)内具有良好的温度稳定性(±15%),符合X7R要求。
实施例2
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.15份、乙酸镁0.92份、草酸氧钒0.03份、乙酸钇2.28份、乙酸镝1.46份、乙醇钡0.5份、乙酸钙0.79份、正硅酸乙酯1.34份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度为10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1270℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
实施例3
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、草酸氧钒0.01份、乙酸镱4.5份、乙酸钬0.37份、乙醇钡1.14份、乙酸钙0.34份、正硅酸乙酯2.43份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度为10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1270℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
实施例4
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、草酸氧钒0.04份、乙酸镱1.5份、乙酸饵0.37份、乙醇钡0.5份、乙酸钙0.34份、正硅酸乙酯2.43份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度为10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在12700℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
实施例5
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.3份、乙酸镁0.31份、草酸氧钒0.03份、乙酸钇1.14份、乙酸钬0.37份、乙醇钡1.14份、乙酸钙0.79份、正硅酸乙酯1.07份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度为10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1270℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
对比例1
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、乙酸镱1.5份、乙酸镝0.36份、乙醇钡1.14份、乙酸钙0.79份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度位10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1250℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
对比例2
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、乙酸镱1.5份、乙酸镝0.36份、乙醇钡1.14份、乙酸钙0.79份、正硅酸乙酯2.43份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度位10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1250℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
对比例3
一种BME多层陶瓷电容器,采用BME瓷介电容器陶瓷材料制成。
BME瓷介电容器陶瓷材料包括以下重量份的原料:钛酸钡100份、乙酸锰0.22份、乙酸镁0.61份、草酸氧钒0.03份、乙酸镱1.5份、乙酸镝0.36份、乙醇钡1.14份、乙酸钙0.79份。
一种BME瓷介电容器陶瓷材料的制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:10:10;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨8h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:20:20:1;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨8h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:5:10;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度位10um;
步骤六,将镍金属内极2印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:将生坯置于270℃的空气气氛下,保温4h对进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:50,同时加湿,在1250℃保温2h;然后降温至900℃回氧,氧气含量12ppm,保温4h;再冷却至室温;
步骤九,端外电极工艺:倒角后端附铜外电极3,烧附温度为850℃,采用氮气保护,保温1h,冷却后,即得到BME瓷介电容器陶瓷材料。
将上述8个实施例所制备的样品经测试获得如下数据,其结果列于下表:
通过上述表格可知,本发明提供的BME瓷介电容器陶瓷材料,通过限定BME瓷介电容器陶瓷材料的组成,以钛酸钡为基础,引入草酸氧钒、正硅酸乙酯与钛酸钡、乙酸盐、乙醇钡配合,在烧结时形成良好的“壳-芯”结构,具有高介电常数(2500~3000),低损耗(<1.5%),在工作温度范围(-55℃~125℃)内具有良好的温度稳定性(±15%),符合X7R要求。同时具有良好的绝缘电阻(25℃RC>2000MΩ·μF,125℃RC>1500MΩ·μF)和很高的击穿强度(BDV>100V/μm),且可与贱金属内电极良好匹配,适应于还原气氛中烧结。利用本发明可设计大容量、超薄介质层的多层陶瓷电容器。有着极高的产业化前景及工业应用价值。
以上所述,仅为本发明的较佳实施例而已,故不能以此限定本发明实施的范围,即依本发明申请专利范围及说明书内容所作的等效变化与修饰,皆应仍属本发明专利涵盖的范围内。
Claims (6)
1.一种BME瓷介电容器陶瓷材料,其特征在于:包括以下重量份的原料:钛酸钡100份、乙酸锰0.15-0.3份、乙酸镁0.3-1.0份、草酸氧钒0.01-0.04份、稀土乙酸盐1.0-5.0份、乙醇钡0.5-1.5份、乙酸钙0.3-1.0份、正硅酸乙酯1.0-3.0份;
其制备方法,包括以下步骤:
步骤一,将BME瓷介电容器陶瓷材料中除钛酸钡以外的原料按其比例称重、混合得添加剂;
步骤二,往添加剂中加入乙醇、甲苯,球磨1-4h,使添加剂完全溶解,其中添加剂、乙醇与甲苯按重量比为添加剂:乙醇:甲苯=1:5-20:5-20;
步骤三,往步骤二得到的溶液中,加入钛酸钡、乙醇、甲苯、分散剂,球磨4-24h,使钛酸钡分散均匀,其中钛酸钡、乙醇、甲苯与分散剂按重量比为酸钡:乙醇:甲苯:分散剂=100:15-35:15-35:0.5-2;
步骤四,将步骤三制得的浆料中,加入邻苯二甲酸二辛酯、聚乙烯醇缩丁醛酯,球磨4-24h,获得流延浆料,其中钛酸钡、邻苯二甲酸二辛酯与聚乙烯醇缩丁醛酯按重量比为钛酸钡:邻苯二甲酸二辛酯:聚乙烯醇缩丁醛酯=100:3-10:5-20;
步骤五,将制得的流延浆料,流延成介电层,介电层厚度≦15um;
步骤六,将贱金属内极印刷至介电层,并将介电层与介电层相互叠加,再经过水压、切片,制造出生坯;
步骤七,脱脂:对生坯进行脱脂;
步骤八,烧结:将脱脂后的生坯,在还原气氛下烧结,烧结过程中通入H2/N2为1:30-70,同时加湿,在1200-1320℃保温1-4h;然后降温至800-1000℃回氧,氧气含量5-20ppm,保温2-6h;再冷却至室温;
步骤九,端外电极工艺:外电极材质为铜,烧附温度为700-900℃,采用氮气保护,保温0.5-2h,冷却后,即得到BME瓷介电容器陶瓷材料。
2.根据权利要求1所述的一种BME瓷介电容器陶瓷材料,其特征在于:所述稀土乙酸盐选自乙酸钇、乙酸镧、乙酸铈、乙酸镨、乙酸钕、乙酸钐、乙酸钆、乙酸铽、乙酸镝、乙酸钬、乙酸饵和乙酸镱中的一种或多种。
3.根据权利要求1所述的一种BME瓷介电容器陶瓷材料,其特征在于:所述钛酸钡的粒度小于500nm。
4.根据权利要求1所述的一种BME瓷介电容器陶瓷材料,其特征在于:所述步骤七中,生坯脱脂的环境为:270℃的空气气氛下,保温4h。
5.根据权利要求1所述的一种BME瓷介电容器陶瓷材料,其特征在于:所述贱金属内极为镍金属内极。
6.一种BME多层陶瓷电容器,其特征在于:采用如权利要求1至3任一项所述的陶瓷材料制成。
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