CN111640869A - Multifunctional photoresponse transistor device, preparation method and application thereof - Google Patents

Abstract

The invention provides a multifunctional light-responsive transistor device, a preparation method and an application thereof, and belongs to the field of semiconductors. The invention provides a multifunctional light-responsive transistor device, comprising: a substrate, an active layer and an electrode, wherein the materials of the active layer include: organic semiconductor and chlorophyll. The multifunctional light-responsive transistor device provided by the present invention can be used as a phototransistor to realize the detection of light signals, and can also be used as a photodetector or a light stimulation synapse device. When used as a phototransistor, the device has high sensitivity to optical signals, and both the output signal and the transfer signal of the transistor can be used as responsive electrical signals, and it is easy to realize the detection and conversion of optical signals in different modes. When the multifunctional light-responsive transistor provided by the present invention is used as a light-stimulated synaptic transistor, it can simulate the learning and forgetting behavior of synapses, and has the function of image processing.

Description

A kind of multifunctional photoresponsive transistor device, preparation method and application thereof

technical field

The invention belongs to the field of semiconductors, and in particular relates to a multifunctional light-responsive transistor device, a preparation method and applications thereof.

Background technique

Light-responsive organic field-effect transistors have been extensively studied due to their great application potential in communication units, medical imaging instruments, flexible and wearable electronics, etc. In recent years, research hotspots have expanded from photoresponsive organic field effect transistors based on single-component organic semiconductors to devices composed of multiple active materials, such as photoresponsive organic field effect transistors based on perovskites and organic semiconductors, and Light-responsive organic field-effect transistors of type and n-type semiconductors. Although a variety of active materials are used in these devices, they usually exhibit a single light-responsive function, for example, most of the previous studies have focused on the light sensing function, and the recent research has focused on the photo-synaptic function. At present, the research on multifunctional photomultipliers is still very little, but it is very important. This is because the same device can realize different kinds of functions, which is of great significance for highly integrated multifunctional organic electronics.

In addition, with the enhancement of people's awareness of environmental protection, biodegradable materials, especially those extracted from natural organic materials, are of great significance for the development of biosafe and environmentally friendly organic optoelectronic devices. Chlorophyll is the most abundant, greenest and most important natural pigment in plant photosynthesis and biological metabolism. Chlorophyll has been extensively studied in photocatalysis and photosynthesis over the past few decades. However, chlorophyll-based photodetectors are rare and limited to several studies of graphene/chlorophyll and metal oxide/chlorophyll-based photodetectors.

On the other hand, artificial synaptic devices have the potential to become fundamental components of neuromorphic networks, similar to biological synapses that provide basic functions for the human nervous system. Previous studies have shown that synaptic devices have great potential in overcoming the bottleneck of von Neumann architecture, and the simulation of human brain neuromorphic computing is an important research direction for the development of next-generation neuromorphic computer systems.

SUMMARY OF THE INVENTION

The present invention is made in order to solve the above-mentioned problems, and the purpose is to provide an organic field effect transistor with excellent photoresponse performance by using chlorophyll having the ability to absorb light to improve the photoresponse performance of the device on the one hand, which can realize the light Signal, especially the detection of weak light; on the other hand, the function of gate regulation of the transistor can be used to give the organic photoresponsive transistor a tunable response to light. The multifunctional response of the organic transistor to light is conveniently and quickly realized, and the preparation method and application of a multifunctional photoresponsive transistor device capable of realizing photodetector and photo-stimulated synapse functions on a single device.

The present invention provides a multifunctional light-responsive transistor device, which has the following features, comprising: a substrate, an active layer and an electrode, wherein, the material of the active layer includes organic semiconductor materials and chlorophyll, and the weight of chlorophyll accounts for the total weight of the active layer. 0.1%-90%.

The multifunctional light-responsive transistor device provided by the present invention may also have the following characteristics: wherein, the chlorophyll is natural chlorophyll, artificially synthesized chlorophyll or chlorophyll derivatives.

In the multifunctional light-responsive transistor device provided by the present invention, it can also have the following characteristics: wherein, the organic semiconductor can be a polymer semiconductor or a small molecule semiconductor, preferably an organic semiconductor with a benzene ring structure (such as DNTT, C8-BTBT , pentacene, F8T2, phthalocyanine, PTAA, PFO, PPE, PIF) or organic semiconductors with thiophene structure (such as PDPP4T, pentathiophene, PQT-12, P3HT, PBTTT, NVP, PTVTF, PNDTBT).

In the multifunctional light-responsive transistor device provided by the present invention, it may also have the following characteristics: wherein the substrate is an inorganic substrate (such as a glass substrate, a ceramic substrate, a silicon substrate, etc.) or an organic substrate (such as PLA) substrate, PET substrate), etc.

The multifunctional light-responsive transistor device provided by the present invention may also have the following feature: wherein, the material of the electrode is a conductive metal, a conductive alloy or a conductive metal oxide.

The multifunctional light-responsive transistor device provided by the present invention may also have the following characteristics: wherein the number of electrodes is two, a conductive channel is arranged between the two electrodes, the conductive channel length is 4 μm-100 μm, and the conductive channel is 4 μm-100 μm long. The channel width is 0.2mm-10mm.

The present invention provides a method for preparing a multifunctional light-responsive transistor device, which also has the following features: comprising the following steps: step 1, cleaning the substrate, blowing dry, and performing OTS treatment on the substrate to obtain intermediate A; step 2. Add natural chlorophyll/organic semiconductor solution dropwise on the surface of intermediate A, and then form an active layer on the surface of the substrate to obtain intermediate B, and the method for forming an active layer on the surface of the substrate is spin coating, drop coating, pulling or Any one of the blade coating; Step 3, the electrode material is evaporated or imprinted on the upper surface of the active layer of the intermediate B by means of a mask under high vacuum conditions to form two electrodes, a multifunctional light-responsive transistor device.

The present invention also provides a method for preparing a multifunctional light-responsive transistor device, which also has the following characteristics: wherein, when the active layer is formed on the surface of the substrate by the spin coating method in step 2, the spin coating speed is 200r /min-6000r/min, spin coating time is 10s-300s.

The invention also provides the application of a multifunctional photoresponse transistor device as a photodetector, which has the technical characteristics: the gate voltage of the multifunctional photoresponse transistor device is -5V--70V.

The invention also provides the application of a multifunctional light-responsive transistor device as a photo-stimulation synapse device, which has the technical characteristics: the gate voltage of the multi-functional photo-responsive transistor device is 5V-70V.

The role and effect of the invention

According to the multifunctional light-responsive transistor device involved in the present invention, because its active layer adopts chlorophyll/organic semiconductor, the multi-functional photo-responsive transistor device provided by the present invention can not only realize the detection of optical signals, but also has high sensitivity and high sensitivity. The prepared transistor sensor is a three-terminal transistor device, driven by two voltages, and both the output signal and the transfer signal of the transistor can be used as electrical signals in response, and it is easy to realize the detection and conversion of optical signals in different modes, and the preparation process is simple, the cost is low, and the use Convenient and easy to achieve mass production.

According to the application of the multifunctional photoresponsive transistor device as a photodetector, the multifunctional photoresponsive transistor device is sensitive to light and dark signals because a gate voltage of -5V to -70V is applied to the multifunctional photoresponsive transistor device. It responds quickly, the ratio of light to dark current can reach 10 ⁶ , and it has imaging capability.

According to the application of the multifunctional light-responsive transistor device involved in the present invention as a photo-stimulated synaptic device, since a gate voltage of 5V to 70V is applied to the multi-functional photo-responsive transistor device, the multifunctional photo-responsive transistor device provided by the present invention can For light signals, it exhibits properties that mimic biological synapses, enabling dynamic learning, forgetting, graphics processing such as contrast enhancement, and computational recognition in networked cognitive models.

Description of drawings

1 is a schematic structural diagram of a multifunctional photoresponsive transistor device in Embodiment 1 of the present invention;

Fig. 2 is the output characteristic curve diagram of the multifunctional photoresponse transistor device in the embodiment 1 of the present invention;

Fig. 3 is the transfer characteristic curve diagram of the multifunctional photo-responsive transistor device in 1 in the embodiment of the present invention;

4 is a schematic diagram of the variation of the output current with the intensity of the light signal when the multifunctional photo-responsive transistor device is used as a photodetector in the embodiment of the present invention;

5 is a graph showing the variation of output current with the intensity of illumination signals when the multifunctional photo-responsive transistor device is used as a photodetector in 2 in the embodiment of the present invention;

6 is a display diagram of an imaging application when the multifunctional photo-responsive transistor device in 2 is used as a photodetector in an embodiment of the present invention;

7 is a graph showing the relationship between the output current and the photostimulation signal when the multifunctional light-responsive transistor device is used as the photostimulation synapse device in 3 in the embodiment of the present invention;

8 is a diagram showing dynamic learning and forgetting of the multifunctional light-responsive transistor device as a photo-stimulated synaptic device in Embodiment 3 of the present invention;

FIG. 9 is a diagram showing the graphics processing function of the multifunctional light-responsive transistor device in 3 as a photo-stimulated synaptic device according to an embodiment of the present invention; and

10 is a display diagram of the multifunctional photo-responsive transistor device in the embodiment of the present invention when it is used as a photo-stimulated synaptic device for digital network recognition simulation;

11 is a graph showing the variation of output current with the intensity of the light signal when the multifunctional light-responsive transistor device is used as a photodetector in the embodiment of the present invention;

FIG. 12 is a graph of the light-dark current ratio of the multifunctional photo-responsive transistor device in Example 4 as a photodetector.

Detailed ways

In order to make it easy to understand the technical means, creative features, achieved goals and effects of the present invention, the present invention is described in detail below with reference to the embodiments and the accompanying drawings.

<Example 1>

FIG. 1 is a schematic structural diagram of a multifunctional photoresponsive transistor device in Example 1 of the present invention.

As shown in FIG. 1 , the multifunctional photo-responsive transistor device 100 provided in this embodiment includes: a substrate 10 , an active layer 20 and two gold electrodes 30 .

The substrate 10 includes a gate electrode 11 and an insulating layer 12 disposed above the gate electrode 11 . In this embodiment, the gate 11 is made of N-doped silicon, and the insulating layer 12 is a silicon substrate of silicon dioxide with a thickness of 300 nm. In other embodiments, the insulating layer can also be a polymer material such as PLA or PVA as the flexible substrate. In other embodiments, the substrate 10 may also be a glass substrate or a ceramic substrate with an insulating and smooth surface.

The active layer 20 is composed of chlorophyll and the organic semiconductor PDPP4T (poly[2,5-bis(2-octyldodecyl)pyrrole[3,4-c]pyrrole-1,4(2H,5H)-dione-3 ,6-diyl)-alanine aminotransferase-(2,2';5',2';5',2"'-tetrahydrothiophene-5,5"-diyl]), chlorophyll The weight percent is 6.7%. In other embodiments, the chlorophyll content may be 0.1% to 90%. The active layer 20 is disposed above the insulating layer 12 by spin coating.

The structural formula of chlorophyll is as follows:

The structural formula of the organic semiconductor PDPP4T is as follows:

Two gold electrodes 30 are deposited on the upper surface of the active layer 20 by vacuum thermal evaporation physical vapor deposition. The length of the conductive channel between the two gold electrodes 30 is 5 μm, and the width of the channel is 0.3 mm. In other embodiments, other conductive materials may be used as electrodes, such as silver electrodes, alloy electrodes or metal oxide electrodes, conductive plastics, and the like. In other embodiments, the length of the conductive channel may be 4 μm-100 μm, and the width of the conductive channel may be 0.2 mm-10 mm.

The preparation method of the multifunctional light-responsive transistor device provided in this embodiment includes the following steps:

Step 1, use acetone and isopropanol to ultrasonically clean the substrate 10, then use deionized water and alcohol to rinse, use nitrogen to dry the surface of the substrate 10, and then perform OTS treatment on the substrate to obtain Intermediate A;

Step 2, put the intermediate A on the spin coater, drop the chlorophyll/organic semiconductor solution with a chlorophyll weight of 6.7% on the surface, and then perform spin coating, spin coating at a speed of 3000r/min for 60 seconds, and form on the surface of the substrate. Active layer to obtain intermediate B;

In step 3, by means of a mask, gold is evaporated on the organic semiconductor under high vacuum to form two gold electrodes 30. The conductive channel between the two is 5 μm long and the channel width is 0.3 mm. responsive transistor device.

The output characteristic curve and the transfer characteristic curve are tested for the multifunctional light-responsive organic transistor provided in this embodiment. The test method is as follows: at room temperature and in the atmospheric environment, using K-4200 semiconductor tester and related probe station, the driving voltage is scanned within -60V-60V, so as to obtain the output characteristic curve and transfer characteristic curve of the device.

FIG. 2 is a graph showing the output characteristics of the multifunctional photoresponsive transistor device in Example 1 of the present invention. 3 is a graph of the transfer characteristics of the multifunctional photoresponsive transistor device in Example 1 of the present invention.

<Example 2>

By adjusting the gate voltage of the multifunctional photoresponsive transistor device prepared in Example 1 to -60V, the multifunctional photoresponsive transistor device can be used as a photodetector.

Use LED collimated light source (wavelength 430nm) to irradiate the above-mentioned multifunctional photoresponse organic transistor, adjust the irradiated light intensity from 0.002-0.271mW/cm ² , and test the output characteristic curve and transfer characteristic curve of the OFET with a semiconductor parameter meter. Current, mobility, and threshold voltage as a function of light intensity.

FIG. 4 is a schematic diagram showing the variation of the output current with the intensity of the light signal when the multifunctional photo-responsive transistor device in Example 2 is used as a photodetector. 5 is a graph showing the variation of output current with the intensity of illumination signal when the multifunctional photo-responsive transistor device in Example 2 is used as a photodetector.

As shown in FIG. 4 , the optical on-off ratio of the multifunctional photo-responsive transistor device provided in Example 1 as a photosensor is about 10 ⁶ .

As shown in FIG. 5 , when the multifunctional photoresponse transistor device provided in Example 1 is used as a photosensor, the output current changes with the change of light intensity, indicating that the multifunctional photoresponsive transistor device provided in Example 1 can also be used as a phototransistor.

At this time, the photoimaging characteristics of the multifunctional photoresponsive transistor device provided in Example 1 as a photosensitive sensor were investigated. An object with a specific shape pattern (in this example, E-shaped cardboard was used) was covered on a 5×5 multifunctional photoresponsive transistor device matrix, and then the device matrix was placed under light to test the electrical parameters of each device element such as current, The ratio of mobility and threshold voltage to the electrical parameters of each element when no object is covered, gives the photosensitive imaging of the device matrix for the object.

FIG. 6 is a diagram showing the imaging application of the multifunctional photo-responsive transistor device in Embodiment 2 of the present invention as a photodetector.

The test results are shown in Figure 6, the photosensitive device matrix signal output clearly shows an E-shaped pattern, indicating that the multifunctional photoresponsive transistor device prepared in Example 1 has good pattern imaging capability.

<Example 3>

By adjusting the gate voltage of the multi-functional photo-responsive transistor device prepared in Example 1 to 60V, the multi-functional photo-responsive transistor device can be used as a photo-stimulated synaptic device.

The above-mentioned multifunctional photoresponsive organic transistors were irradiated using an LED collimated light source (wavelength 430 nm). The irradiation intensity was adjusted to 0.04-0.48 mW/cm ² , the irradiation time was 2 seconds, and the output current curve was detected.

FIG. 7 is a graph showing the relationship between the output current and the photostimulation signal when the multifunctional photoresponsive transistor device in the third embodiment of the present invention is used as a photostimulation synapse device.

As shown in Figure 7, the output current curve of the multifunctional photo-responsive transistor device prepared in Example 1 under the irradiation of different intensities of light stimulation has characteristics similar to that of a biological synapse, and can be used as a synaptic device.

The dynamic learning and forgetting behaviors of the multifunctional light-responsive transistor device prepared in Example 1 as a photo-stimulated synaptic device were tested. Objects with specific shape patterns (H-shaped cardboard used in this example) were covered on a 3×3 matrix of multifunctional photoresponsive transistor devices, tested without light stimulation and after light stimulation 1, 5, and 20 times with the light stimulation The learning behavior of the synaptic transistor, recording the current signal of the matrix. The photostimulation was subsequently withdrawn, and the output current signal of the matrix was tested after 1, 3, and 5 minutes.

8 is a diagram showing the dynamic learning and forgetting of the multifunctional light-responsive transistor device in Example 3 of the present invention when it is used as a photo-stimulated synaptic device.

The test results are shown in FIG. 8 . The matrix signal output of the multifunctional photo-responsive transistor device prepared in Example 1 clearly shows the dynamic learning and forgetting process of the device for light stimulation.

The processing capability of the multifunctional light-responsive transistor device prepared in Example 1 as a photo-stimulated synapse device for graphics was studied. We prepared a 3 × 3 matrix of synaptic transistors and illuminated the photostimulated synaptic transistors with different light intensities at different locations. The current of the matrix device can be read, and at this time, it is used as the input signal, and the device has four grayscales.

FIG. 9 is a diagram showing the graphics processing function of the multifunctional light-responsive transistor device in Embodiment 3 of the present invention when it is used as a photo-stimulated synapse device.

The test results are shown in Figure 9. When the optical stimulation signal is removed, the device shows an increase in the current signal difference over time. At 30 and 90 seconds after the photostimulation signal was removed, the device showed a greater difference in current, a phenomenon known as pattern contrast enhancement.

FIG. 10 is a diagram showing the simulation of network recognition for numbers when the multifunctional light-responsive transistor device is used as a photo-stimulated synapse device in Example 3 of the present invention.

The multifunctional light-responsive transistor device prepared in Example 1 as a photo-stimulated synapse device was studied for its digital recognition and analog performance. This example uses the National Institute of Standards and Technology (MNIST) database to demonstrate the learning ability of the light-stimulated synaptic transistor. In this example, a two-layer convolutional neural network is designed, based on the channel conductance value of the synaptic transistor, a supervised learning framework is established, and a system-level MNIST pattern recognition is simulated. As shown in Figure 10, in this example, the network is trained with images in the MNIST database, and the recognition rate of 10 characters from 0 to 9 can be obtained. The figure shows the recognition process of the number 0.

<Example 4>

FIG. 1 is also a schematic structural diagram of a multifunctional photo-responsive transistor device in Embodiment 4 of the present invention.

As shown in FIG. 1, the active layer 20 is composed of a derivative of chlorophyll and an organic semiconductor PDPP4T (poly[2,5-bis(2-octyldodecyl)pyrrole[3,4-c]pyrrole-1,4( 2H,5H)-diketo-3,6-diyl)-alanine aminotransferase-(2,2';5',2';5',2"'-tetrahydrothiophene-5,5" -diyl]), the content of chlorophyll derivatives is 50%. In other embodiments, the content may be 1% to 80%. The active layer 20 is disposed above the insulating layer 12 by spin coating.

The structural formula of chlorophyll derivatives is shown below:

Two gold electrodes 30 are deposited on the upper surface of the active layer 20 by vacuum thermal evaporation physical vapor deposition. The conductive channel between the two gold electrodes 30 is 30 μm long and 1 mm wide. In other embodiments, other conductive materials may be used as electrodes, such as silver electrodes, alloy electrodes or metal oxide electrodes, conductive plastics, and the like. In other embodiments, the length of the conductive channel may be 4 μm-100 μm, and the width of the conductive channel may be 0.2 mm-10 mm.

The preparation method of the photoresponsive transistor device provided in this embodiment is similar to that of Embodiment 1, and includes the following steps:

Step 1, use acetone and isopropanol to ultrasonically clean the substrate 10, then use deionized water and alcohol to rinse, use nitrogen to dry the surface of the substrate 10, and then perform OTS treatment on the substrate to obtain Intermediate A;

Step 2, put the intermediate A on the spin coater, drop the chlorophyll/organic semiconductor solution on the surface, wherein the content of the chlorophyll derivative in this embodiment is 50%. Then spin-coating at a speed of 2500r/min for 30 seconds to form an active layer on the surface of the substrate to obtain Intermediate B;

Step 3, by means of a mask, gold is evaporated on the organic semiconductor under high vacuum to form two gold electrodes 30, the conductive channel between the two is 30 μm long, and the channel width is 1 mm, to obtain a light-responsive transistor device. .

A transfer characteristic curve test is performed on the light-responsive organic transistor provided in this embodiment. The test method is as follows: at room temperature and in the atmospheric environment, using a K-4200 semiconductor tester and a related probe station, and scanning within a driving voltage of 10V-45V, the transfer characteristic curve of the device can be obtained.

In this case, it is used as a photodetector. Use the LED collimated light source (wavelength 430nm) to irradiate the above-mentioned multifunctional photoresponsive organic transistor, adjust the irradiation light intensity from 0.00068-0.0686mW/cm ² , test and record the output characteristic curve and transfer characteristic curve of the OFET with a semiconductor parameter meter.

11 is a schematic diagram showing the change of the output current with the intensity of the light signal when the multifunctional photo-responsive transistor device in Example 4 is used as a photodetector. It can be found that as the light intensity increases, the device current continues to increase.

As shown in FIG. 12 , the optical on-off ratio of the multifunctional photo-responsive transistor device provided in Example 4 as a photosensor is about 10 ⁶ . It shows that the device has good photoresponse ability and can be used as a phototransistor.

Action and effect of the embodiment

According to the multi-functional photo-responsive transistor device involved in Embodiment 1, because the active layer uses chlorophyll/organic semiconductor, the multi-functional photo-responsive transistor device provided in Embodiment 1 can not only realize the detection of optical signals, but also has high performance. Sensitivity, and the prepared transistor sensor is a three-terminal transistor device, driven by dual voltages, the output signal and transfer signal of the transistor can be used as electrical signals in response, and it is easy to realize the detection and conversion of optical signals in different modes. At the same time, the preparation process is simple and the cost Low, easy to use, easy to achieve mass production.

According to the application of the multi-functional photo-responsive transistor device involved in Example 2 as a photodetector, since the multi-functional photo-responsive transistor device is applied with a gate voltage of -60V, the multi-functional photo-responsive transistor device can respond to light and dark signals. Quick response, the ratio of light to dark current can reach 10 ⁶ , and it has imaging ability.

According to the application of the multifunctional photoresponsive transistor device involved in Example 3 as a photo-stimulated synapse device, since the gate voltage of 60 V was applied to the multifunctional photoresponsive transistor device, the multifunctional photoresponsive transistor device could exhibit an optical signal Simulate the properties of biological synapses to realize the functions of dynamic learning, forgetting, graph processing such as contrast enhancement, and computational recognition of network cognitive models.

According to the multifunctional light-responsive transistor device involved in Example 4, because its active layer uses chlorophyll derivatives/organic semiconductors, the device of the present invention has a good light-responsive effect for both chlorophyll and its derivatives as active materials , suitable for photosensitive materials rich. At the same time, the multifunctional light-responsive transistor device provided in the fourth embodiment is simple in preparation process, low in cost, and easy to produce.

The above embodiments are preferred cases of the present invention, and are not intended to limit the protection scope of the present invention.

Claims (10)

1. a multifunctional photoresponse transistor device, is characterized in that, comprises: substrate, active layer and electrode, Wherein, the material of the active layer includes organic semiconductor material and chlorophyll, and the weight of the chlorophyll accounts for 0.1%-90% of the total weight of the active layer. 2. The multifunctional light-responsive transistor device according to claim 1, wherein: Wherein, the chlorophyll is natural chlorophyll, artificially synthesized chlorophyll or chlorophyll derivative. 3. The multifunctional photoresponsive transistor device according to claim 1, wherein: Wherein, the semiconductor is an organic semiconductor having a benzene ring structure or an organic semiconductor having a thiophene structure. 4. The multifunctional photoresponsive transistor device according to claim 1, wherein: Wherein, the substrate is a glass substrate, a ceramic substrate, a silicon substrate, a PET substrate or a PLA substrate. 5. The multifunctional photoresponsive transistor device according to claim 1, wherein: Wherein, the material of the electrode is conductive metal, conductive alloy or conductive metal oxide. 6. The multifunctional photoresponsive transistor device according to claim 1, wherein: Wherein, the number of the electrodes is two, a conductive channel is provided between the two electrodes, the length of the conductive channel is 4 μm-100 μm, and the width of the conductive channel is 0.2 mm-10 mm. 7. A preparation method of a multifunctional light-responsive transistor device, for preparing the multifunctional photo-responsive transistor device according to any one of claims 1-6, characterized in that, comprising the following steps: Step 1, cleaning the substrate, blowing dry, and performing OTS treatment on the substrate to obtain Intermediate A; Step 2, drop the natural chlorophyll/organic semiconductor solution on the surface of the intermediate A, and then form an active layer on the surface of the substrate to obtain the intermediate B, and the method for forming the active layer on the surface of the substrate is spin coating , drip, pull or scrape any one; Step 3, the electrode material is evaporated or imprinted on the upper surface of the active layer of the intermediate B by means of a mask under high vacuum conditions to form two electrodes, a multifunctional light-responsive transistor device. 8. The preparation method of the multifunctional light-responsive transistor device according to claim 7, wherein: Wherein, when the active layer is formed on the surface of the substrate by the spin coating method in step 2, the spin coating speed is 200r/min-6000r/min, and the spin coating time is 10s-300s. 9 . The application of the multifunctional photoresponsive transistor device according to any one of claims 1 to 5 as a photodetector, wherein the gate voltage of the multifunctional photoresponsive transistor device is -5V to -70V. 10 . 10 . The application of the multifunctional light-responsive transistor device according to any one of claims 1 to 5 as a photo-stimulated synapse device, wherein the gate voltage of the multifunctional photo-responsive transistor device is 5V to 70V. 11 .

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