CN111640869A - Multifunctional photoresponse transistor device, preparation method and application thereof - Google Patents

Multifunctional photoresponse transistor device, preparation method and application thereof Download PDF

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CN111640869A
CN111640869A CN202010474481.5A CN202010474481A CN111640869A CN 111640869 A CN111640869 A CN 111640869A CN 202010474481 A CN202010474481 A CN 202010474481A CN 111640869 A CN111640869 A CN 111640869A
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CN111640869B (en
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黄佳
杨奔
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Tongji University
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Abstract

The invention provides a multifunctional photoresponse transistor device, a preparation method and application thereof, and belongs to the field of semiconductors. The invention provides a multifunctional photoresponse transistor device, which comprises: the electrode comprises a substrate, an active layer and an electrode, wherein the active layer comprises the following materials: an organic semiconductor and chlorophyll. The multifunctional photoresponse transistor device provided by the invention can be used as a photoelectric transistor to realize the detection of optical signals, and can also be used as a photoelectric detector or an optical stimulation synapse device. When the photoelectric transistor is used as a photoelectric transistor, the device has high sensitivity to optical signals, and the output signal and the transfer signal of the transistor can be used as responsive electric signals, so that the detection and conversion of the optical signals in different modes are easy to realize. When the multifunctional photoresponse transistor provided by the invention is used as a photostimulation synapse transistor, the learning and forgetting behaviors of synapses can be simulated, and the multifunctional photoresponse transistor has a function of graphic processing.

Description

Multifunctional photoresponse transistor device, preparation method and application thereof
Technical Field
The invention belongs to the field of semiconductors, and particularly relates to a multifunctional photoresponse transistor device, a preparation method and application thereof.
Background
Photoresponsive organic field-effect transistors have been extensively studied due to their great potential for applications in the fields of communication units, medical imaging instruments, flexible and wearable electronics, etc. In recent years, research has been hot expanding from single component organic semiconductor-based photoresponsive organic field-effect transistors to devices composed of a variety of active materials, such as perovskite and organic semiconductor-based photoresponsive organic field-effect transistors, as well as photoresponsive organic field-effect transistors having both p-type and n-type semiconductors. Although these devices use a plurality of active materials, they generally exhibit a single photoresponsive function, and for example, many of the previous studies have focused on the photo-sensing function, and recent studies have focused on the photo-synapse function. At present, the research on multifunctional photomultiplier is still rare, but important. This is because the same device can realize different kinds of functions, and is of great significance to multifunctional organic electronics with high integration.
In addition, with the enhancement of the environmental awareness of people, biodegradable materials, especially materials extracted from natural organic matters, have important significance for developing biosafety and environment-friendly organic photoelectric devices. Chlorophyll is the most abundant, green and important natural pigment in plant photosynthesis and biological metabolism. Chlorophyll has been extensively studied in photocatalysis and photosynthesis over the past several decades. However, chlorophyll-based photodetectors are rare and limited to several studies of graphene/chlorophyll and metal oxide/chlorophyll-based photodetectors.
On the other hand, similar to biological synapses that provide basic functions to the human cranial nervous system, artificial synapse devices may become an essential component of neuromorphic networks. Research has shown that synaptic devices have great potential in overcoming the bottleneck of von neumann architecture, and the simulation of human brain neuromorphic computation is an important research direction for the development of next-generation neuromorphic computer systems.
Disclosure of Invention
The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for improving the photo-response performance of a device by using chlorophyll having an ability to absorb light, so that an organic field effect transistor has excellent photo-response performance, and detection of an optical signal, particularly weak light, can be achieved; on the other hand, the organic photoresponse transistor can be endowed with a response mode adjustable to light by utilizing the function of transistor gate regulation. The preparation method and the application of the multifunctional photoresponse transistor device realize the multifunctional response of the organic transistor to light conveniently and quickly, and realize the functions of a photoelectric detector and photostimulation synapse on a single device.
The invention provides a multifunctional photoresponse transistor device, which is characterized by comprising the following components: the organic light-emitting diode comprises a substrate, an active layer and an electrode, wherein the material of the active layer comprises an organic semiconductor material and chlorophyll, and the weight of the chlorophyll accounts for 0.1% -90% of the total weight of the active layer.
In the multifunctional photoresponsive transistor device provided by the invention, the multifunctional photoresponsive transistor device can also have the following characteristics: wherein the chlorophyll is natural chlorophyll, and artificially synthesized chlorophyll or chlorophyll derivatives.
In the multifunctional photoresponsive transistor device provided by the invention, the multifunctional photoresponsive transistor device can also have the following characteristics: among them, the organic semiconductor may be a polymer semiconductor or a small molecule semiconductor, preferably an organic semiconductor having a benzene ring structure (e.g., DNTT, C8-BTBT, pentacene, F8T2, phthalocyanine, PTAA, PFO, PPE, PIF) or an organic semiconductor having a thiophene structure (e.g., PDPP4T, pentacene, PQT-12, P3HT, PBTTT, NVP, PTVTF, PNDTBT).
In the multifunctional photoresponsive transistor device provided by the invention, the multifunctional photoresponsive transistor device can also have the following characteristics: wherein, the substrate is an inorganic substrate (such as a glass substrate, a ceramic substrate, a silicon substrate, etc.) or an organic substrate (such as a PLA substrate, a PET substrate), etc.
In the multifunctional photoresponsive transistor device provided by the invention, the multifunctional photoresponsive transistor device can also have the following characteristics: the electrode is made of conductive metal, conductive alloy or conductive metal oxide.
In the multifunctional photoresponsive transistor device provided by the invention, the multifunctional photoresponsive transistor device can also have the following characteristics: wherein, the number of the electrodes is two, a conductive channel is arranged between the two electrodes, the length of the conductive channel is 4-100 μm, and the width of the conductive channel is 0.2-10 mm.
The invention provides a preparation method of a multifunctional photoresponse transistor device, which is also characterized in that: the method comprises the following steps: step 1, cleaning a substrate, drying the substrate, and performing OTS treatment on the substrate to obtain an intermediate A; step 2, dripping a natural chlorophyll/organic semiconductor solution on the surface of the intermediate A, then forming an active layer on the surface of the substrate to obtain an intermediate B, wherein the method for forming the active layer on the surface of the substrate is any one of spin coating, drip coating, lifting and blade coating; and 3, evaporating or stamping an electrode material on the upper surface of the active layer of the intermediate B in a high vacuum condition in a mask mode to form two electrodes, so as to obtain the multifunctional photoresponse transistor device.
The invention also provides a preparation method of the multifunctional photoresponse transistor device, which is also characterized in that: and when the active layer is formed on the surface of the substrate by adopting a spin coating method in the step 2, the spin coating speed is 200r/min-6000r/min, and the spin coating time is 10s-300 s.
The invention also provides an application of the multifunctional photoresponse transistor device as a photoelectric detector, which has the following technical characteristics: the gate voltage of the multifunctional photoresponse transistor device is-5V to-70V.
The invention also provides an application of the multifunctional photoresponse transistor device as an optical stimulation synapse device, which has the technical characteristics that: the gate voltage of the multifunctional photoresponse transistor device is 5V-70V.
Action and Effect of the invention
According to the multifunctional photoresponse transistor device, the active layer of the multifunctional photoresponse transistor device adopts chlorophyll/organic semiconductor, so that the multifunctional photoresponse transistor device can realize detection of optical signals and has high sensitivity, the prepared transistor sensor is a three-terminal transistor device and is driven by double voltages, output signals and transfer signals of the transistor can be used as responding electrical signals, detection and conversion of the optical signals in different modes are easy to realize, and meanwhile, the multifunctional photoresponse transistor device is simple in preparation process, low in cost, convenient to use and easy to realize large-scale production.
The multifunctional photoresponsive transistor device according to the invention is applied as a photodetector, sinceThe gate voltage of-5V to-70V is applied to the multifunctional photoresponse transistor device, so that the multifunctional photoresponse transistor device can rapidly respond to light and dark signals, and the light-dark current ratio can reach 106And has imaging capability.
According to the application of the multifunctional photoresponse transistor device as the optical stimulation synapse device, the grid voltage of 5V-70V is applied to the multifunctional photoresponse transistor device, so that the multifunctional photoresponse transistor device provided by the invention can show the characteristic of simulating biological synapse for optical signals, and the functions of dynamic learning, forgetting, graphic processing such as contrast enhancement and network cognition model calculation identification are realized.
Drawings
Fig. 1 is a schematic structural view of a multifunctional photoresponsive transistor device in embodiment 1 of the invention;
fig. 2 is a graph showing an output characteristic of the multifunctional photoresponsive transistor device in embodiment 1 of the invention;
fig. 3 is a graph of transfer characteristics of the multifunctional photoresponsive transistor device in example 1 of the invention;
fig. 4 is a schematic diagram showing the variation of the output current with the intensity of the illumination signal when the multifunctional photoresponsive transistor device in embodiment 2 of the invention is used as a photodetector;
FIG. 5 is a graph showing the variation of output current with the intensity of an illumination signal when the multifunctional photoresponsive transistor device in example 2 of the present invention is used as a photodetector;
fig. 6 is an illustration of an imaging application in which the multifunctional photoresponsive transistor device of example 2 of the invention is used as a photodetector;
FIG. 7 is a graph of the output current versus the optical stimulus signal for the multifunctional optical response transistor device as the optical stimulus synapse device in example 3;
FIG. 8 is a diagram illustrating dynamic learning and forgetting of the multi-functional photoresponsive transistor device as a photostimulation synapse device in example 3;
FIG. 9 is a diagram illustrating the graphic processing function of the multifunctional photoresponsive transistor device as a photostimulation synapse device in example 3; and
FIG. 10 is a diagram showing a network identification simulation for numbers when the multifunctional photoresponsive transistor device in example 3 is used as an optical stimulation synapse device;
FIG. 11 is a graph showing the variation of output current with the intensity of an illumination signal when the multifunctional photoresponsive transistor device in example 4 of the present invention is used as a photodetector;
fig. 12 is a graph showing the ratio of light to dark current when the multifunctional photoresponsive transistor device in example 4 of the present invention is used as a photodetector.
Detailed Description
In order to make the technical means, the creation features, the achievement purposes and the effects of the invention easy to understand, the invention is specifically described below by combining the embodiment and the attached drawings.
< example 1>
Fig. 1 is a schematic structural view of a multifunctional photoresponsive transistor device in embodiment 1 of the invention.
As shown in fig. 1, the present embodiment provides a multifunctional photoresponsive transistor device 100 including: a substrate 10, an active layer 20, and two gold electrodes 30.
The substrate 10 includes a gate electrode 11 and an insulating layer 12 disposed over the gate electrode 11. In this embodiment, the gate electrode 11 is N-doped silicon, and the insulating layer 12 is a silicon substrate of silicon dioxide with a thickness of 300 nm. In other embodiments, the insulating layer may also be made of polymer material such as PLA or PVA. In other embodiments, the substrate 10 may be a glass substrate or a ceramic substrate with an insulating and smooth surface.
The active layer 20 consists of chlorophyll and the organic semiconductor PDPP4T (poly [2, 5-bis (2-octyldodecyl) pyrrolo [3,4-c ] pyrrole-1, 4(2H, 5H) -dione-3, 6-diyl) -alanine aminotransferase- (2,2 '; 5', 2 '-tetrahydrothiophene-5, 5' -diyl), the weight percentage of chlorophyll being 6.7%. In other embodiments, the chlorophyll content can be 0.1% to 90%. An active layer 20 is disposed over the insulating layer 12 by spin coating.
Chlorophyll has the following structural formula:
Figure BDA0002515391890000071
the structural formula of the organic semiconductor PDPP4T is shown as follows:
Figure BDA0002515391890000072
two gold electrodes 30 are deposited on the upper surface of the active layer 20 by vacuum thermal evaporation physical vapor deposition. The conductive channel between the two gold electrodes 30 was 5 μm long and the channel width was 0.3 mm. In other embodiments, other conductive materials may be used as the electrodes, such as silver electrodes, alloy or metal oxide electrodes, conductive plastics, and the like. In other embodiments, the conductive channel may have a length of 4 μm to 100 μm and a width of 0.2mm to 10 mm.
The method for manufacturing the multifunctional photoresponse transistor device provided by the embodiment comprises the following steps:
step 1, ultrasonically cleaning a substrate 10 by using acetone and isopropanol, then flushing by using deionized water and alcohol, blow-drying the surface of the substrate 10 by using nitrogen, and then carrying out OTS treatment on the substrate to obtain an intermediate A;
step 2, putting the intermediate A on a spin coater, dropwise adding a chlorophyll/organic semiconductor solution with the weight of 6.7% of chlorophyll on the surface, then carrying out spin coating, carrying out spin coating at the rotating speed of 3000r/min for 60 seconds, and forming an active layer on the surface of the substrate to obtain an intermediate B;
and 3, evaporating gold on the organic semiconductor in high vacuum by a mask mode to form two gold electrodes 30, wherein the length of a conducting channel between the two gold electrodes is 5 micrometers, and the width of the channel is 0.3mm, so that the multifunctional photoresponse transistor device is obtained.
The multifunctional photoresponsive organic transistor provided in this example was subjected to an output characteristic curve and transfer characteristic curve test. The test method comprises the following steps: the output characteristic curve and the transfer characteristic curve of the device are obtained by scanning the driving voltage within-60V under the room temperature and atmospheric environment by using a K-4200 semiconductor tester and an associated probe station.
Fig. 2 is a graph showing an output characteristic of the multifunctional photoresponsive transistor device in embodiment 1 of the invention. Fig. 3 is a graph showing transfer characteristics of the multifunctional photoresponsive transistor device in example 1 of the present invention.
< example 2>
The gate voltage of the multifunctional photoresponsive transistor device prepared in example 1 was adjusted to-60V, and the multifunctional photoresponsive transistor device was used as a photodetector.
Irradiating the multifunctional photoresponsive organic transistor with LED collimated light source (wavelength of 430nm) to adjust the irradiation intensity from 0.002-0.271mW/cm2And testing the output characteristic curve and the transfer characteristic curve of the OFET by using a semiconductor parameter instrument to obtain the change of the current, the mobility and the threshold voltage of the OFET along with the light intensity.
Fig. 4 is a schematic diagram showing the variation of the output current with the intensity of the illumination signal when the multifunctional photoresponsive transistor device in example 2 of the present invention is used as a photodetector. Fig. 5 is a graph showing the variation of the output current with the intensity of the illumination signal when the multifunctional photoresponsive transistor device in example 2 of the present invention is used as a photodetector.
As shown in fig. 4, the optical on-off ratio of the multifunctional photoresponsive transistor device provided in example 1 as a photosensor is about 106。
As shown in fig. 5, the output current of the multifunctional photoresponsive transistor device provided in example 1 varies with the variation of the light intensity when it is used as a photosensor, indicating that the multifunctional photoresponsive transistor device provided in example 1 can also be used as a phototransistor.
The photo imaging characteristics of the multifunctional photo responsive transistor device provided as example 1 of the photosensor were studied at this time. An article having a pattern of a specific shape (in this example, an E-shaped cardboard) is overlaid on a 5 x 5 matrix of multi-functional photoresponsive transistor devices, and the matrix of devices is then placed under light to test the ratio of the electrical parameters of each device element, such as current, mobility, and threshold voltage, to the electrical parameters of each element when no article is overlaid, giving a photosensitive image of the device matrix on the article.
Fig. 6 is a diagram showing an imaging application of the multifunctional photoresponsive transistor device as a photodetector in example 2 of the present invention.
The test results are shown in fig. 6, where the photosensor matrix signal output clearly shows an E-shaped pattern, indicating that the multifunctional photoresponsive transistor device prepared in example 1 has good pattern imaging capability.
< example 3>
The gate voltage of the multifunctional photoresponsive transistor device prepared in example 1 was adjusted to 60V, and the multifunctional photoresponsive transistor device was used as a photostimulation synapse device.
The multifunctional photoresponsive organic transistor described above was illuminated using an LED collimated light source (wavelength 430 nm). Adjusting the irradiation intensity to 0.04-0.48mW/cm2The irradiation time was 2 seconds, and the output current curve was measured.
FIG. 7 is a graph of the output current versus the optical stimulation signal for the multifunctional optical response transistor device as the optical stimulation synapse device in example 3.
As shown in fig. 7, the output current curve of the multifunctional photoresponsive transistor device prepared in example 1 under irradiation of different intensities of light stimuli has characteristics similar to biological synapses, and can be used as a synapse device.
The multifunctional photoresponsive transistor device prepared in example 1 as a photostimulated synapse device was tested for dynamic learning and forgetting behavior. An object with a pattern of specific shapes (in this example, an H-shaped cardboard) was laid over a 3 x 3 matrix of multifunctional photoresponsive transistor devices, the learning behavior of the photostimulated synaptic transistors was tested 1, 5, and 20 times without and after photostimulation, and the current signals of the matrix were recorded. The light stimulus was then removed and the matrix was tested for output current signal after 1, 3, 5 minutes.
FIG. 8 is a diagram illustrating dynamic learning and forgetting of the multifunctional photoresponsive transistor device as a photostimulation synapse device in example 3.
The test results are shown in fig. 8, and the matrix signal output of the multifunctional photoresponsive transistor device prepared in example 1 clearly shows the dynamic learning and forgetting process of the device for light stimulation.
The processing capability of the multifunctional photoresponsive transistor device prepared in example 1 as a photostimulating synapse device with respect to patterns was investigated. We prepared a 3 x 3 matrix of synaptic transistors that were photostimulated with different intensities of light illuminating the transistors at different locations. The current to the matrix device can be read, which is now taken as the input signal, resulting in the device having four gray levels.
FIG. 9 is a diagram illustrating the graphic processing function of the multifunctional photoresponsive transistor device as a photostimulation synapse device in example 3.
The test results are shown in fig. 9, and the device showed an increasing phenomenon of current signal difference over time when the optical stimulation signal was removed. At 30 seconds and 90 seconds after the optical stimulation signal is removed, the device shows larger current difference, namely, the contrast enhancement phenomenon of the graph.
FIG. 10 is a diagram showing a network identification simulation of the multifunctional photoresponsive transistor device as an optical stimulation synapse device in example 3.
The performance of the digital identification simulation was studied on the multifunctional photoresponsive transistor device prepared in example 1 as a photostimulating synapse device. The present embodiment adopts national institute of standards and technology (MNIST) database to demonstrate the learning ability of the photostimulated synaptic transistor. In this embodiment, a two-layer convolutional neural network is designed, a supervised learning framework is established based on the channel conductance value of the synaptic transistor, and system-level MNIST pattern recognition is simulated. As shown in fig. 10, the present embodiment trains the network by using the images in the MNIST database, and the recognition rate of 10 characters from 0 to 9 can be obtained, and the recognition process of the number 0 is shown in the figure.
< example 4>
Fig. 1 is a schematic structural view of a multifunctional photoresponsive transistor device in embodiment 4 of the invention.
As shown in fig. 1, the active layer 20 is composed of a chlorophyll derivative and an organic semiconductor PDPP4T (poly [2, 5-bis (2-octyldodecyl) pyrrolo [3,4-c ] pyrrole-1, 4(2H, 5H) -dione-3, 6-diyl) -alanine aminotransferase- (2,2 '; 5', 2 '; 5', 2 "' -tetrahydrothiophene-5, 5" -diyl), the content of the chlorophyll derivative being 50%. In other embodiments, the content may be 1% to 80%. An active layer 20 is disposed over the insulating layer 12 by spin coating.
The structural formula of the chlorophyll derivative is shown as follows:
Figure BDA0002515391890000121
two gold electrodes 30 are deposited on the upper surface of the active layer 20 by vacuum thermal evaporation physical vapor deposition. The conductive channel between the two gold electrodes 30 was 30 μm long and 1mm wide. In other embodiments, other conductive materials may be used as the electrodes, such as silver electrodes, alloy or metal oxide electrodes, conductive plastics, and the like. In other embodiments, the conductive channel may have a length of 4 μm to 100 μm and a width of 0.2mm to 10 mm.
The method for manufacturing the photo-responsive transistor device provided in this embodiment is similar to that in embodiment 1, and includes the following steps:
step 1, ultrasonically cleaning a substrate 10 by using acetone and isopropanol, then flushing by using deionized water and alcohol, blow-drying the surface of the substrate 10 by using nitrogen, and then carrying out OTS treatment on the substrate to obtain an intermediate A;
and 2, putting the intermediate A on a spin coater, and dropwise adding a chlorophyll/organic semiconductor solution on the surface, wherein the content of the chlorophyll derivative in the embodiment is 50%. Then spin-coating at a rotating speed of 2500r/min for 30 seconds to form an active layer on the surface of the substrate to obtain an intermediate B;
and 3, evaporating gold on the organic semiconductor in high vacuum in a mask mode to form two gold electrodes 30, wherein the length of a conducting channel between the two gold electrodes is 30 micrometers, and the width of the channel is 1mm, so that the photoresponse transistor device is obtained.
The photoresponsive organic transistor provided in this example was subjected to a transfer characteristic curve test. The test method comprises the following steps: the transfer characteristic curve of the device can be obtained by scanning within a driving voltage range of 10V-45V at room temperature and in an atmospheric environment by using a K-4200 semiconductor tester and an associated probe station.
In which case it is used as a photodetector. Irradiating the multifunctional photoresponsive organic transistor with LED collimated light source (wavelength of 430nm) to adjust the irradiation intensity from 0.00068-0.0686mW/cm2And testing and recording an output characteristic curve and a transfer characteristic curve of the OFET by using a semiconductor parameter instrument.
Fig. 11 is a schematic diagram showing the variation of the output current with the intensity of the illumination signal when the multifunctional photoresponsive transistor device in example 4 of the present invention is used as a photodetector. It can be seen that as the light intensity increases, the device current continues to increase.
As shown in fig. 12, example 4 provides a multi-functional photoresponsive transistor device having an optical on-off ratio of about 10 when used as a photosensor6. The device has good photoresponse capability and can be used as a phototransistor.
Effects and effects of the embodiments
According to the multifunctional photoresponse transistor device in accordance with embodiment 1, the active layer thereof is made of chlorophyll/organic semiconductor, so that the multifunctional photoresponse transistor device provided in embodiment 1 can not only realize the detection of optical signals and has a very high sensitivity, but also can be a three-terminal transistor device, and can be driven by a dual voltage, and both the output signal and the transfer signal of the transistor can be used as responsive electrical signals, thereby easily realizing the detection and conversion of optical signals in different modes.
According to the application of the multifunctional photo-responsive transistor device as the photodetector as described in embodiment 2, since the gate voltage of-60V is applied to the multifunctional photo-responsive transistor device, the multifunctional photo-responsive transistor device responds to light and dark signals quickly, and the ratio of light to dark current can reach 106And has imaging capability.
According to the application of the multifunctional photoresponsive transistor device of the embodiment 3 as the photostimulation synapse device, since the gate voltage of 60V is applied to the multifunctional photoresponsive transistor device, the multifunctional photoresponsive transistor device can exhibit the characteristics of simulating biological synapses for optical signals, and can realize the functions of dynamic learning, forgetting, graphic processing such as contrast enhancement, and network cognition model calculation identification.
According to the multifunctional photoresponse transistor device related to the embodiment 4, the active layer of the multifunctional photoresponse transistor device adopts the chlorophyll derivatives/organic semiconductors, so that the device has a good photoresponse effect on chlorophyll and the derivatives thereof serving as active materials, and is rich in applicable photosensitive materials. Meanwhile, the multifunctional photoresponse transistor device provided by the embodiment 4 is simple in preparation process, low in cost and easy to produce.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.

Claims (10)

1. A multifunctional light-responsive transistor device, comprising: a substrate, an active layer and an electrode,
wherein the material of the active layer comprises an organic semiconductor material and chlorophyll, and the weight of the chlorophyll accounts for 0.1-90% of the total weight of the active layer.
2. The multifunctional light-responsive transistor device of claim 1, wherein:
wherein the chlorophyll is natural chlorophyll, and artificially synthesized chlorophyll or chlorophyll derivatives.
3. The multifunctional light-responsive transistor device of claim 1, wherein:
wherein the semiconductor is an organic semiconductor with a benzene ring structure or an organic semiconductor with a thiophene structure.
4. The multifunctional light-responsive transistor device of claim 1, wherein:
wherein the substrate is a glass substrate, a ceramic substrate, a silicon substrate, a PET substrate or a PLA substrate.
5. The multifunctional light-responsive transistor device of claim 1, wherein:
the electrode is made of conductive metal, conductive alloy or conductive metal oxide.
6. The multifunctional light-responsive transistor device of claim 1, wherein:
the number of the electrodes is two, a conductive channel is arranged between the two electrodes, the length of the conductive channel is 4-100 mu m, and the width of the conductive channel is 0.2-10 mm.
7. A method of fabricating a multifunctional photo-responsive transistor device, for fabricating the multifunctional photo-responsive transistor device of any one of claims 1-6, comprising the steps of:
step 1, cleaning a substrate, drying the substrate, and performing OTS treatment on the substrate to obtain an intermediate A;
step 2, dripping a natural chlorophyll/organic semiconductor solution on the surface of the intermediate A, and then forming an active layer on the surface of the substrate to obtain an intermediate B, wherein the method for forming the active layer on the surface of the substrate is any one of spin coating, drip coating, lifting and blade coating;
and 3, evaporating or stamping an electrode material on the upper surface of the active layer of the intermediate body B in a high vacuum condition in a mask mode to form two electrodes, so as to obtain the multifunctional photoresponse transistor device.
8. The method of making a multifunctional photoresponsive transistor device of claim 7, wherein:
and when the active layer is formed on the surface of the substrate by adopting a spin coating method in the step 2, the spin coating speed is 200r/min-6000r/min, and the spin coating time is 10s-300 s.
9. Use of the multifunctional photo-responsive transistor device of any one of claims 1 to 5 as a photodetector, wherein the multifunctional photo-responsive transistor device has a gate voltage of-5V to-70V.
10. Use of the multifunctional photo-responsive transistor device of any one of claims 1 to 5 as a photo-stimulating synapse device, wherein the multifunctional photo-responsive transistor device has a gate voltage of 5V to 70V.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070016271A (en) * 2005-08-02 2007-02-08 삼성에스디아이 주식회사 Electrode for photoelectric conversion device including metal elements and dye sensitized solar cell using the same
TW201119049A (en) * 2009-11-24 2011-06-01 Ind Tech Res Inst Quantum dot dye-sensitized solar cell
CN109085706A (en) * 2018-07-23 2018-12-25 华南师范大学 A kind of photoresponse device based on chlorophyll doping
CN109326724A (en) * 2018-09-19 2019-02-12 电子科技大学 A kind of photosensitive sensor and preparation method thereof based on organic field-effect tube

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070016271A (en) * 2005-08-02 2007-02-08 삼성에스디아이 주식회사 Electrode for photoelectric conversion device including metal elements and dye sensitized solar cell using the same
TW201119049A (en) * 2009-11-24 2011-06-01 Ind Tech Res Inst Quantum dot dye-sensitized solar cell
CN109085706A (en) * 2018-07-23 2018-12-25 华南师范大学 A kind of photoresponse device based on chlorophyll doping
CN109326724A (en) * 2018-09-19 2019-02-12 电子科技大学 A kind of photosensitive sensor and preparation method thereof based on organic field-effect tube

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
E LESTARI: "Influences of mass Chlorophyll-a blends using P3HT:PCBM for efficiency of organic solar cells" *
SUKHDEV ROY: "Switching Light With Light in Chlorophyll-A Molecules Based on Excited-State Absorption" *
YINGLI CHU: "Photosensitive and Flexible Organic Field-Effect Transistors Based on Interface Trapping Effect and Their Application in 2D Imaging Array" *

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