CN111635503A - Fluorosilicone modified epoxy resin, preparation method and application thereof - Google Patents
Fluorosilicone modified epoxy resin, preparation method and application thereof Download PDFInfo
- Publication number
- CN111635503A CN111635503A CN202010605210.9A CN202010605210A CN111635503A CN 111635503 A CN111635503 A CN 111635503A CN 202010605210 A CN202010605210 A CN 202010605210A CN 111635503 A CN111635503 A CN 111635503A
- Authority
- CN
- China
- Prior art keywords
- epoxy resin
- modified epoxy
- material composition
- reaction
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003822 epoxy resin Substances 0.000 title claims abstract description 101
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 101
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 29
- ZHPNWZCWUUJAJC-UHFFFAOYSA-N fluorosilicon Chemical compound [Si]F ZHPNWZCWUUJAJC-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000000203 mixture Substances 0.000 claims description 33
- 239000003795 chemical substances by application Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 229920000642 polymer Polymers 0.000 claims description 21
- -1 salt compound Chemical class 0.000 claims description 16
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 claims description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 239000003063 flame retardant Substances 0.000 claims description 15
- 238000006735 epoxidation reaction Methods 0.000 claims description 14
- 239000003999 initiator Substances 0.000 claims description 14
- 229920000459 Nitrile rubber Polymers 0.000 claims description 13
- 239000002841 Lewis acid Substances 0.000 claims description 12
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 12
- 150000007517 lewis acids Chemical group 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- 239000012745 toughening agent Substances 0.000 claims description 12
- 238000012662 bulk polymerization Methods 0.000 claims description 11
- 239000003054 catalyst Substances 0.000 claims description 11
- 238000007142 ring opening reaction Methods 0.000 claims description 11
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 9
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 9
- 229910052783 alkali metal Inorganic materials 0.000 claims description 9
- 150000001340 alkali metals Chemical class 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 8
- 239000000178 monomer Substances 0.000 claims description 7
- 229920001721 polyimide Polymers 0.000 claims description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 claims description 6
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000002879 Lewis base Substances 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 6
- 150000001412 amines Chemical class 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims description 6
- 150000007527 lewis bases Chemical class 0.000 claims description 6
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 6
- 150000004692 metal hydroxides Chemical group 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 229920005749 polyurethane resin Polymers 0.000 claims description 6
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 6
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 claims description 5
- 239000004843 novolac epoxy resin Substances 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 230000035484 reaction time Effects 0.000 claims description 5
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims description 5
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 claims description 4
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 claims description 4
- LRWZZZWJMFNZIK-UHFFFAOYSA-N 2-chloro-3-methyloxirane Chemical compound CC1OC1Cl LRWZZZWJMFNZIK-UHFFFAOYSA-N 0.000 claims description 4
- FGZFESWHQXSPJU-UHFFFAOYSA-N 2-methyl-2-(3,3,3-trifluoropropyl)-1,3,5,2,4,6-trioxatrisilinane Chemical compound FC(F)(F)CC[Si]1(C)O[SiH2]O[SiH2]O1 FGZFESWHQXSPJU-UHFFFAOYSA-N 0.000 claims description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 4
- 150000008064 anhydrides Chemical class 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- XOVNCWWRDSAYNE-UHFFFAOYSA-N 2,4,6,8-tetramethyl-2,4,6,8-tetrakis(3,3,3-trifluoropropyl)-1,3,5,7,2,4,6,8-tetraoxatetrasilocane Chemical compound FC(F)(F)CC[Si]1(C)O[Si](C)(CCC(F)(F)F)O[Si](C)(CCC(F)(F)F)O[Si](C)(CCC(F)(F)F)O1 XOVNCWWRDSAYNE-UHFFFAOYSA-N 0.000 claims description 3
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 3
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 3
- FKBMTBAXDISZGN-UHFFFAOYSA-N 5-methyl-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1C(C)CCC2C(=O)OC(=O)C12 FKBMTBAXDISZGN-UHFFFAOYSA-N 0.000 claims description 3
- 229910015900 BF3 Inorganic materials 0.000 claims description 3
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 claims description 3
- HBWBFCWUNUNGAQ-UHFFFAOYSA-N FC(C1(C(OC2=CC=CC=C2)C=CC(=C1)N)C(F)(F)F)(F)F Chemical compound FC(C1(C(OC2=CC=CC=C2)C=CC(=C1)N)C(F)(F)F)(F)F HBWBFCWUNUNGAQ-UHFFFAOYSA-N 0.000 claims description 3
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 claims description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- YSMRWXYRXBRSND-UHFFFAOYSA-N TOTP Chemical compound CC1=CC=CC=C1OP(=O)(OC=1C(=CC=CC=1)C)OC1=CC=CC=C1C YSMRWXYRXBRSND-UHFFFAOYSA-N 0.000 claims description 3
- YYQRGCZGSFRBAM-UHFFFAOYSA-N Triclofos Chemical compound OP(O)(=O)OCC(Cl)(Cl)Cl YYQRGCZGSFRBAM-UHFFFAOYSA-N 0.000 claims description 3
- BQPNUOYXSVUVMY-UHFFFAOYSA-N [4-[2-(4-diphenoxyphosphoryloxyphenyl)propan-2-yl]phenyl] diphenyl phosphate Chemical compound C=1C=C(OP(=O)(OC=2C=CC=CC=2)OC=2C=CC=CC=2)C=CC=1C(C)(C)C(C=C1)=CC=C1OP(=O)(OC=1C=CC=CC=1)OC1=CC=CC=C1 BQPNUOYXSVUVMY-UHFFFAOYSA-N 0.000 claims description 3
- 235000010290 biphenyl Nutrition 0.000 claims description 3
- 239000004305 biphenyl Substances 0.000 claims description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Substances FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- VONWDASPFIQPDY-UHFFFAOYSA-N dimethyl methylphosphonate Chemical compound COP(C)(=O)OC VONWDASPFIQPDY-UHFFFAOYSA-N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical group [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 claims description 3
- 239000000347 magnesium hydroxide Substances 0.000 claims description 3
- 229910001862 magnesium hydroxide Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 239000009719 polyimide resin Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229920003048 styrene butadiene rubber Polymers 0.000 claims description 3
- 229920000468 styrene butadiene styrene block copolymer Polymers 0.000 claims description 3
- 229960001147 triclofos Drugs 0.000 claims description 3
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 claims description 3
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical class C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 claims description 3
- 239000008096 xylene Substances 0.000 claims description 3
- 239000011592 zinc chloride Substances 0.000 claims description 3
- 235000005074 zinc chloride Nutrition 0.000 claims description 3
- 125000001624 naphthyl group Chemical group 0.000 claims description 2
- 239000002362 mulch Substances 0.000 claims 3
- 230000005540 biological transmission Effects 0.000 abstract description 4
- 239000011521 glass Substances 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 8
- 239000013039 cover film Substances 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000011161 development Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 239000011342 resin composition Substances 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000012787 coverlay film Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000009775 high-speed stirring Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 150000001450 anions Chemical group 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 208000012839 conversion disease Diseases 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- MHRLWUPLSHYLOK-UHFFFAOYSA-N thiomorpholine-3,5-dicarboxylic acid Chemical compound OC(=O)C1CSCC(C(O)=O)N1 MHRLWUPLSHYLOK-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/308—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing halogen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/22—Di-epoxy compounds
- C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
- C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/045—Polysiloxanes containing less than 25 silicon atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
- C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
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- C08G77/382—Polysiloxanes modified by chemical after-treatment containing atoms other than carbon, hydrogen, oxygen or silicon
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- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
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Abstract
The invention provides a fluorine-silicon modified epoxy resin, a preparation method and application thereof. The fluorine-silicon modified epoxy resin comprises a structure shown in the following formula I:
Description
Technical Field
The invention relates to the technical field of covering film materials, in particular to a fluorine-silicon modified epoxy resin, and a preparation method and application thereof.
Background
In recent years, with the rapid development of electronic technology, the demand for flexible circuit boards has increased and the application fields have also increased. Therefore, higher demands are also made on the performance of the coverlay film for the protective material of the flexible copper foil substrate (FCCL). The cover film is an insulating film coated with an adhesive, and not only resists solder and protects the FPC from moisture, foreign substances and chemicals, but also has the effect of improving the flexibility resistance of the FPC. At present, resin systems of the cover film adhesive are mainly acrylic resin systems and epoxy resin systems. Among them, epoxy resins have excellent adhesion, excellent electrical insulation, good mechanical properties, good corrosion resistance and chemical resistance, and are widely used in various fields such as civil engineering and construction, electronics and electrical, coating plastics, and the like. However, the poor heat resistance, weather resistance and impact damage resistance of epoxy resins have largely limited their wider use.
With the development of the microelectronic industry and the arrival of the 5G era, the circuit integration degree is higher and higher, and a series of problems of increased power consumption, noise interference and the like caused by signal transmission delay and crosstalk and dielectric loss appear. In the large background of the deep development of very large scale integrated circuits, reducing the dielectric constant of interlayer materials becomes an important means for reducing the signal delay time. The dielectric constant (3-4) of epoxy resins has not been able to meet the requirements of the high-speed development of the microelectronics industry. The solution of the problem depends on the development and application of novel low dielectric (less than 3.0) and ultra-low dielectric (less than or equal to 2.2) epoxy resin materials. Because the dipole polarization capability of the C-F bond is smaller and the steric hindrance between molecules can be increased, the introduction of the C-F bond can effectively reduce the dielectric constant, and therefore, the introduction of the F element into the epoxy resin and the formula system thereof proves to be one of effective methods for improving the dielectric loss. At the same time, the C-F bond energy is relatively large (486kJ/mol), CF3The groups are easily enriched on the surface of the resin, so that the resinThe surface tension, the friction factor and the refractive index are low, and the coating has excellent wear resistance, corrosion resistance, pollution resistance, moisture resistance, dielectricity, flame retardance, heat resistance and durability.
CN 1626563A also discloses a preparation method of the fluorine-containing epoxy resin and the derivatives thereof: epoxy resin is prepared by epoxidation of fluorine-containing diphenol compound, dielectric constant and dielectric loss of the resin obtained after curing are obviously reduced, and water absorption is improved, but heat resistance is not mentioned.
CN 109836559A introduces a method for obtaining fluorine-silicon polyurethane prepolymer modified epoxy resin by polymerizing polyurethane prepolymer containing fluorine silicon with conventional epoxy resin, and simultaneously improving the toughness of the epoxy resin; wujiawei et al also use fluorosilicone oil for modifying epoxy resin, and prepares a series of fluorosilicone modified epoxy resins through the reaction between epoxy groups and hydroxyl groups at the end of fluorosilicone oil, so that the high temperature resistance and the hydrophobicity of the epoxy resins are improved. However, the fluorine-containing silicone epoxy resins disclosed in these proposals are also poor in heat resistance and dielectric properties.
For the above reasons, there is a need for a new modified epoxy resin to provide a cover film with good heat resistance and dielectric properties and better overall performance.
Disclosure of Invention
The invention mainly aims to provide a fluorine-silicon modified epoxy resin, a preparation method and application thereof, and aims to solve the problems that in the prior art, an epoxy resin cover film is poor in heat resistance and dielectric property and cannot meet the requirements of high-speed development of the microelectronic industry.
In order to achieve the above object, according to one aspect of the present invention, there is provided a fluorosilicone modified epoxy resin comprising a structure represented by the following formula I:
in the formula I, n is an integer of 5 or more.
According to another aspect of the present invention, there is also provided a method for preparing a fluorosilicone modified epoxy resin, comprising the steps of: s1, performing ring-opening bulk polymerization on reaction monomers of trifluoropropylmethylcyclotrisiloxane and/or 2,4,6, 8-tetramethyl-2, 4,6, 8-tetra (3,3, 3-trifluoropropyl) cyclotetrasiloxane under the action of an alkali metal initiator to form a hydroxyl-terminated polyfluorosilicon polymer; s2, carrying out epoxidation reaction on the hydroxyl-terminated polyfluorosilicate polymer and epoxy chloropropane to obtain the fluorosilicone modified epoxy resin.
Further, in step S1, the alkali metal initiator is one or more of lithium hydroxide, sodium hydroxide and potassium hydroxide; preferably, the molar ratio of the alkali metal initiator to the reaction monomer is 0.5-5%, and the reaction temperature of the ring-opening bulk polymerization is 0-40 ℃; preferably, the viscosity of the polymer at the end of the ring-opening bulk polymerization reaction is 2000 to 15000 mPas.
Further, in step S2, the weight ratio of the hydroxyl-terminated polyfluorosilicate polymer to the epichlorohydrin is 1 (4-8); preferably, the epoxidation reaction is carried out under the action of a catalyst, wherein the catalyst is Lewis acid, and the Lewis acid is one or more of anhydrous aluminum chloride, anhydrous tin chloride, anhydrous magnesium chloride and anhydrous zinc chloride; more preferably, the weight of the catalyst is 0.05-0.5% of that of the hydroxyl-terminated poly-fluorine-silicon polymer; preferably, the reaction temperature of the epoxidation reaction is 50-80 ℃, and the reaction time is 3-5 h.
Further, the fluorine-silicon modified epoxy resin comprises epoxy resin, a curing agent, a flame retardant and a toughening agent, wherein 11-45 wt% of the epoxy resin is the fluorine-silicon modified epoxy resin in the claim 1.
Further, the covering film material composition comprises, by weight, 10-25 parts of fluorosilicone modified epoxy resin, 30-50 parts of epoxy resin except for the fluorosilicone modified epoxy resin, 1-3.5 parts of a curing agent, 10-20 parts of a flame retardant and 20-35 parts of a toughening agent.
Further, the covering film material composition also comprises 0.5-3 parts by weight of a curing accelerator; preferably, the curing accelerator is lewis acid or lewis base, and the lewis acid is a metal salt compound, preferably one or more of manganese, iron, cobalt, nickel, copper and zinc salt compounds; the Lewis base is one or more of imidazole, boron trifluoride amine complex, 2-phenylimidazole, 2-ethyl-4-methylimidazole and 4-dimethylaminopyridine.
Further, the epoxy resin except the fluorosilicone modified epoxy resin is a low dielectric epoxy resin with a dielectric constant of 3.5-6.0 and a dielectric loss of 0.005-0.008; preferably, the epoxy resin other than the fluorosilicone-modified epoxy resin is one or more of a dicyclopentadiene type novolac epoxy resin, a biphenyl type epoxy resin, and a naphthalene ring type epoxy resin.
Further, the curing agent is an organic amine curing agent and/or an organic acid anhydride curing agent; preferably, the organic amine curing agent is one or more of 4,4 '-diaminodiphenyl ether, 4' -diaminodiphenylmethane, 4 '-diaminodiphenylsulfone, 4' -bis (2,2 '-bistrifluoromethyl-4-aminophenoxy) benzene, 3', 5,5 '-tetramethyl-4, 4' -diaminodiphenylmethane; preferably, the organic acid anhydride curing agent is one or more of 4-methyl hexahydrophthalic anhydride, 4-methyl tetracyanophthalic anhydride, tetrahydrophthalic anhydride and hexahydrophthalic anhydride; preferably, the flame retardant is a metal hydroxide and/or a phosphorus-containing compound, preferably the metal hydroxide is magnesium hydroxide and/or aluminum hydroxide, preferably the phosphorus-containing compound is one or more of trichloroethyl phosphate, triethyl phosphate, tricresyl phosphate, dimethyl methylphosphonate, bisphenol a-bis (diphenyl phosphate), tert-butylated triphenyl phosphate, diethyl ethylphosphate and dialkyl phosphate; preferably, the toughening agent is one or more of polyurethane resin, nitrile rubber aniline resin, polyimide resin, styrene-butadiene rubber and styrene-butadiene-styrene block copolymer, preferably the polyurethane resin is polyaminomethyl ester resin, preferably the nitrile rubber is carboxyl-terminated nitrile rubber and/or epoxy-terminated nitrile rubber.
Further, the covering film material composition also comprises a solvent, wherein the solvent is preferably one or more of butanone, acetone, toluene, xylene, dimethyl formamide and propylene glycol methyl ether; preferably, the solid content of the covering film material composition is 30-70 wt%.
The fluorosilicone modified epoxy resin provided by the invention has low dielectric constant, dielectric loss and excellent heat resistance. The fluorine-silicon modified epoxy resin is applied to an epoxy resin series covering film, can obviously improve the heat resistance of the covering film, has low dielectric property, meets the high-frequency and high-efficiency transmission requirement of signals in the 5G era, and can be used as a flexible copper-clad plate and a halogen-free covering film material in the fields of intelligent products (glasses, earphones, mobile phones, watches and the like), cameras, video cameras, portable flat panel displays, military space vehicles and the like.
Detailed Description
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail with reference to examples.
As described in the background section, prior art epoxy-based coverlay films have poor heat resistance and dielectric properties and cannot meet the requirements of the rapidly developing microelectronics industry.
In order to solve the above problems, the present invention provides a fluorosilicone modified epoxy resin, which has a structure represented by formula I:
in the formula I, n is an integer of 5 or more.
The fluorosilicone modified epoxy resin provided by the invention has low dielectric constant, dielectric loss and excellent heat resistance. The fluorine-silicon modified epoxy resin is applied to an epoxy resin series covering film, can obviously improve the heat resistance of the covering film, has low dielectric property, meets the high-frequency and high-efficiency transmission requirement of signals in the 5G era, and can be used as a flexible copper-clad plate and a halogen-free covering film material in the fields of intelligent products (glasses, earphones, mobile phones, watches and the like), cameras, video cameras, portable flat panel displays, military space vehicles and the like.
In addition to the above beneficial effects, the fluorosilicone modified epoxy resin provided by the present invention has good compatibility with other components in the epoxy resin-based coverlay composition, and the formed coverlay composition has good coatability, adhesiveness, and the like.
According to another aspect of the present invention, there is also provided a method for preparing the above fluorosilicone modified epoxy resin, comprising the steps of: s1, reacting the monomer trifluoropropylmethylcyclotrisiloxane (D)3F) And/or 2,4,6, 8-tetramethyl-2, 4,6, 8-tetrakis (3,3, 3-trifluoropropyl) cyclotetrasiloxane (D)4F) Carrying out ring-opening bulk polymerization under the action of an alkali metal initiator to form a hydroxyl-terminated polyfluorosilicate polymer; s2, carrying out epoxidation reaction on the hydroxyl-terminated polyfluorosilicate polymer and epoxy chloropropane to obtain the fluorosilicone modified epoxy resin. The modified epoxy resin can be obtained by the method through ring-opening bulk polymerization and terminal hydroxyl epoxidation reaction in sequence. The method is convenient to operate, simple in process, mild in reaction condition, high in reaction conversion rate and the like, and is very suitable for large-scale application.
In order to improve the reaction efficiency, in a preferred embodiment, the alkali metal initiator is one or more of lithium hydroxide, sodium hydroxide and potassium hydroxide; more preferably, the molar ratio of the alkali metal initiator to the reaction monomer is 0.5-5%, and the reaction temperature of the ring-opening bulk polymerization is 0-40 ℃; preferably, the viscosity of the polymer at the end of the ring-opening bulk polymerization reaction is 2000 to 15000 mPas. In the actual operation process, the whole reaction process is preferably carried out under the protection of nitrogen, and the reaction time is about 30 min. And (3) after the reaction is finished, preferably adding hydrochloric acid to terminate the reaction, wherein the use amount of the hydrochloric acid is 3-5 times of the mole number of the initiator, extracting after the termination, and washing to obtain the hydroxyl-terminated polyfluorosilicate polymer.
In a preferred embodiment, in the step S2, the weight ratio of the hydroxyl-terminated polyfluorosilicate polymer to the epichlorohydrin is 1 (4-8); this can further improve the epoxidation efficiency of the hydroxy-terminated fluorosilicone polymer. Preferably, the epoxidation reaction is carried out under the action of a catalyst, wherein the catalyst is Lewis acid, and the Lewis acid is one or more of anhydrous aluminum chloride, anhydrous tin chloride, anhydrous magnesium chloride and anhydrous zinc chloride (the catalysis effect is optimal by adopting the anhydrous tin chloride); more preferably, the weight of the catalyst is 0.05-0.5% of that of the hydroxyl-terminated poly-fluorine-silicon polymer; preferably, the reaction temperature of the epoxidation reaction is 50-80 ℃, and the reaction time is 3-5 h. In the actual operation process, after the epoxidation reaction is finished, the reaction solution is preferably extracted and washed to obtain the final target product.
According to another aspect of the invention, the covering film material composition comprises epoxy resin, a curing agent, a flame retardant and a toughening agent, wherein 11-45 wt% of the epoxy resin is the fluorine-silicon modified epoxy resin. The modified epoxy resin with good dielectric property and heat resistance is adopted, and the modified epoxy resin has good compatibility with other compositions, so that the covering film formed by coating and curing the covering film material composition provided by the invention has good heat resistance and low dielectric property, low dielectric constant and low dielectric loss, meets the high-frequency and high-efficiency transmission requirements of signals in the 5G era, and can be used as a flexible copper-clad plate and halogen-free covering film material in the fields of intelligent products (glasses, earphones, mobile phones, watches, and the like), cameras, video cameras, portable flat panel displays, military space vehicles and the like.
In a preferred embodiment, the covering film material composition comprises, by weight, 10 to 25 parts of a fluorosilicone modified epoxy resin, 30 to 50 parts of an epoxy resin other than the fluorosilicone modified epoxy resin, 1 to 3.5 parts of a curing agent, 10 to 20 parts of a flame retardant, and 20 to 35 parts of a toughening agent. The dosage relation of each component is controlled within the range, and the finally formed covering film has better comprehensive performance.
In order to further promote the curing efficiency of the composition, in a preferred embodiment, the covering film material composition further comprises 0.5-3 parts by weight of a curing accelerator; preferably, the curing accelerator is lewis acid or lewis base, the lewis acid is metal salt compound, preferably one or more of manganese, iron, cobalt, nickel, copper, zinc salt compound, such as organic carboxylate, such as zinc octoate, cobalt zincate, etc.; the Lewis base is one or more of imidazole (imidazole), boron trifluoride amine complex (2-methylimidazole,2MI), 2-phenylimidazole (2-phenyl-1H-imidizole, 2PZ), 2-ethyl-4-methylimidazole (2-ethyl-4-methylimidazole,2E4MI), 4-dimethylaminopyridine (4-dimethylaminopyridine, DMAP).
In a preferred embodiment, the epoxy resin other than the fluorosilicone-modified epoxy resin is a low dielectric epoxy resin having a dielectric constant of 3.5 to 5.5 and a dielectric loss of 0.005 to 0.007; preferably, the epoxy resin other than the fluorosilicone-modified epoxy resin is one or more of a dicyclopentadiene type novolac epoxy resin (e.g., HP-7200, Japan DIC; SEV-3408, Shandong industries), a biphenyl type epoxy resin (e.g., YX4000, Mitsubishi chemical, SN495V2, Nippon Nissin iron) and a naphthalene type epoxy resin (e.g., NC-7000L, Nippon Chemicals; HP-6000, Japan DIC). On the one hand, the accumulated epoxy resin has better comprehensive performance, and on the other hand, the combined use of the accumulated epoxy resin and the epoxy resin contributes to further improving the low dielectric property and the heat resistance of the covering film.
The curing agent may be of a type commonly used in the art, and of course, in order to enhance the curing effect, the flame retardant effect and the toughening effect, in a preferred embodiment, the curing agent is an organic amine curing agent and/or an organic acid anhydride curing agent; preferably, the organic amine curing agent is one or more of 4,4 ' -diaminodiphenyl ether (ODA), 4 ' -diaminodiphenylmethane (DDM), 4 ' -diaminodiphenyl sulfone (4,4 ' -DDS), 4 ' -bis (2,2 ' -bistrifluoromethyl-4-aminophenoxy) benzene (6FAPB), 3 ', 5,5 ' -tetramethyl-4, 4 ' -diaminodiphenylmethane (TMDA); preferably, the organic acid anhydride curing agent is one or more of 4-methyl hexahydrophthalic anhydride (HMPA), 4-methyl tetracyanophthalic anhydride (MeTHPA), tetrahydrophthalic anhydride (THPA) and hexahydrophthalic anhydride (HHPA); preferably, the flame retardant is a metal hydroxide and/or a phosphorus-containing compound, preferably, the metal hydroxide is magnesium hydroxide and/or aluminum hydroxide (the particle size is preferably 1-5 μm), and preferably, the phosphorus-containing compound is one or more of trichloroethyl phosphate, triethyl phosphate, tricresyl phosphate, dimethyl methylphosphonate, bisphenol A-bis (diphenyl phosphate), tert-butylated triphenyl phosphate, diethyl ethylphosphate and dialkyl phosphate; preferably, the toughening agent is one or more of polyurethane resin, nitrile rubber aniline resin, polyimide resin, styrene-butadiene rubber and styrene-butadiene-styrene block copolymer, preferably the polyurethane resin is polyaminomethyl ester resin, preferably the nitrile rubber is carboxyl-terminated nitrile rubber and/or epoxy-terminated nitrile rubber.
The composition may further include a solvent to dissolve only the epoxy resin and the fluorosilicone resin and disperse the curing agent, the curing accelerator, the flame retardant, and the toughening agent, preferably without reacting with them. In a preferred embodiment, the coverlay material composition further comprises a solvent, preferably one or more of butanone, acetone, toluene, xylene, dimethylformamide, propylene glycol methyl ether; preferably, the solid content of the covering film material composition is 30-70 wt%.
The preparation method of the composition is simple, and for example, the composition can be prepared by the following steps: firstly, adding a curing agent, a curing accelerator, a flame retardant and a solvent into a high-speed stirring reactor for mixing, wherein the stirring speed is more than 2000rpm, and the stirring time is 30 min. And then adding the fluorosilicone modified epoxy resin, other epoxy resins and the flame retardant into the reactor, mixing and stirring at room temperature for 30 min. And finally, adding a toughening agent into the reactor, and mixing for 30min to prepare the fluorosilicone modified epoxy resin composition. Wherein, the viscosity of the finally obtained resin composition is preferably controlled to be 800-2000 mPas and is optimally controlled to be 800-1200 mPas at 25 ℃.
In a specific use process, after the resin composition is subjected to a coating step, a baking step and a curing step, a cover film is formed on the surface of the base material. Optionally, a release paper may be provided on the other side of the cover film (the side not in contact with the substrate) to facilitate transportation and storage of the produced cover film. Specifically, the above-mentioned production method is to coat the above-mentioned composition on the surface of a substrate, and the above-mentioned substrate may be a Polyimide (PI) plastic film substrate (thickness is 12.5 μm). And (3) carrying out a baking step on the coated substrate to remove the solvent in the resin composition. Then, the temperature was adjusted to 80 ℃ and 1.6Kgf/cm2Press-fitting to obtain the packaged product.
The present application is described in further detail below with reference to specific examples, which should not be construed as limiting the scope of the invention as claimed.
Examples
Preparing fluorine-silicon modified epoxy resin:
step 1, hydroxyl-terminated fluorosilicone polymer anion ring-opening bulk polymerization: the polymerized monomer is trifluoropropylmethyl cyclotrisiloxane (D)3F) The initiator is potassium hydroxide initiator; adding D into the reactor3F and potassium hydroxide, controlling the initiator (molar ratio) to be 1.0%, controlling the reaction temperature to be 20 ℃, controlling the reaction time to be 30min, and carrying out the whole reaction process under the protection of nitrogen; finally, the addition of hydrochloric acid was terminated, and the amount of the hydrochloric acid was 5 times (molar ratio) as much as that of the initiator. After the reaction was completed, extraction was performed with ethyl acetate, and washing was performed. Obtaining the hydroxyl-terminated polyfluorosilicate polymer. The resultant polymer had a viscosity of about 6000 mPas, corresponding to n of formula I of about 20.
Step 2 epoxidation of hydroxyl-terminated groups: and adding 500 parts by mass of epoxy chloropropane to 100 parts by weight of the synthesized hydroxyl-terminated fluorosilicone polymer to react for 3 hours at a constant temperature (50 ℃) under the action of a catalyst, extracting by using ethyl acetate, and washing to obtain the final fluorine-silicon modified epoxy resin, wherein the catalyst is anhydrous tin chloride (1.5%).
Preparation of epoxy resin coating material composition:
adding the curing agent, the curing accelerator, the flame retardant and the solvent into a high-speed stirring reactor for mixing, wherein the stirring speed is more than 2000rpm, and the stirring time is 30 min. And then adding the fluorosilicone modified epoxy resin, other epoxy resins and the flame retardant into the reactor, mixing and stirring at room temperature for 30 min. And finally, adding a toughening agent into the reactor, and mixing for 30min to prepare the fluorosilicone modified epoxy resin composition.
The composition formulations in the examples are given in table 1 below:
TABLE 1
HP-7200 Dicyclopentadiene Novolac epoxy resin, Nippon DIC Ltd
SEV-3408 dicyclopentadiene novolac epoxy resin, Shengdong industry
PIAD: soluble polyimide, crude chemical
P-260 soluble polyimide, space chemistry
BX-39SS polyurethane, Toyo Boseki
Hycar-1042 Acrylonitrile-butadiene rubber, south emperor chemical
OP-935 aluminium Diethylphosphate, Crainen chemical Co
H-42M aluminum hydroxide, Showa chemical industry
And (3) removing the release paper 130 from the fluorine-silicon modified epoxy resin covering film packaging product, and curing for 150h and 3h to obtain the composite dielectric layer.
Evaluation of main properties:
1. measurement of dielectric constant (Dk) and dielectric loss (Df)
The resin composition composite dielectric layers obtained in the examples were dried at 150 ℃ for 30min, and the dielectric constant and dielectric loss of each composite dielectric layer were measured by the split dielectric resonator (SPDR) method using a resonator (agilent E5071 bean) at 25 ℃ and 50% RH.
2. Thermogravimetric TGA test
TGA test was conducted using 10mg of the resin composition composite dielectric layer obtained in the examples, and the test procedure was 20 DEG/min, and room temperature was raised to 600 ℃ to obtain an initial decomposition temperature.
3. Tensile strength
The resin composition composite dielectric layer obtained in the examples was cut into a test piece having a size of 152.4 cm × 12.7 cm. Next, the tensile strength of these test pieces was measured by using an universal tensile machine at a tensile rate of 50.8 m/h.
4. Flame resistance
The flame resistance referred to herein in the present invention is defined in UL-94V 0. Specifically, the composite dielectric layer was subjected to 2 burning tests for 10 seconds each, and flame resistance was excellent if the flame was extinguished within 30 seconds and no combustible substance dropped. On the contrary, the flame resistance is not good, and the specific evaluation criteria are as follows:
o: the flame is extinguished within 30 seconds, no combustible substance falls, and the flame resistance is good
X: the flame is not extinguished within 30 seconds, or the burning substances fall off, and the flame resistance is poor
The characterization results are shown in table 2 below:
TABLE 2
As a result of the experiment, it was found that the coverlay films of examples 1 to 8 all had low dielectric constant (Dk < 3.0) and low dielectric loss (Df. ltoreq.0.0080) while maintaining good strength, heat resistance and flame retardancy. From examples 1 to 5, it can be seen that the dielectric constant/dielectric loss value loss is reduced and the performance is better as the addition amount of the fluorosilicone modified epoxy resin is increased within a certain range. As can be seen from comparative example 1, the composition without the fluorosilicone modified epoxy resin had a high dielectric constant of 3.12, a thermal decomposition temperature of 248 ℃ and poor heat resistance.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
2. The preparation method of the fluorosilicone modified epoxy resin of claim 1, comprising the steps of:
s1, performing ring-opening bulk polymerization on reaction monomers of trifluoropropylmethylcyclotrisiloxane and/or 2,4,6, 8-tetramethyl-2, 4,6, 8-tetra (3,3, 3-trifluoropropyl) cyclotetrasiloxane under the action of an alkali metal initiator to form a hydroxyl-terminated polyfluorosilicon polymer;
s2, carrying out epoxidation reaction on the hydroxyl-terminated polyfluorosilicate polymer and epoxy chloropropane to obtain the fluorosilicone modified epoxy resin.
3. The preparation method according to claim 2, wherein in the step S1, the alkali metal initiator is one or more of lithium hydroxide, sodium hydroxide and potassium hydroxide;
preferably, the molar ratio of the alkali metal initiator to the reaction monomer is 0.5-5%, and the reaction temperature of the ring-opening bulk polymerization is 0-40 ℃;
preferably, the viscosity of the polymer at the end of the ring-opening bulk polymerization reaction is 2000 to 15000 mPas.
4. The method according to claim 2 or 3, wherein in step S2, the weight ratio of the hydroxyl-terminated polyfluorosilicate polymer to the epichlorohydrin is 1 (4-8);
preferably, the epoxidation reaction is carried out under the action of a catalyst, wherein the catalyst is a Lewis acid, and the Lewis acid is one or more of anhydrous aluminum chloride, anhydrous tin chloride, anhydrous magnesium chloride and anhydrous zinc chloride; more preferably, the weight of the catalyst is 0.05-0.5% of that of the hydroxyl-terminated poly-fluorine-silicon polymer;
preferably, the reaction temperature of the epoxidation reaction is 50-80 ℃, and the reaction time is 3-5 h.
5. The covering film material composition is characterized by comprising epoxy resin, a curing agent, a flame retardant and a toughening agent, wherein 11-45 wt% of the epoxy resin is the fluorosilicone modified epoxy resin in claim 1.
6. The coverlay material composition of claim 5, wherein the coverlay material composition comprises, by weight, 10 to 25 parts of the fluorosilicone modified epoxy resin, 30 to 50 parts of an epoxy resin other than the fluorosilicone modified epoxy resin, 1 to 3.5 parts of the curing agent, 10 to 20 parts of the flame retardant, and 20 to 35 parts of the toughening agent.
7. The coverlay material composition of claim 6, further comprising 0.5 to 3 parts by weight of a curing accelerator;
preferably, the curing accelerator is a lewis acid or a lewis base, and the lewis acid is a metal salt compound, preferably one or more of manganese, iron, cobalt, nickel, copper and zinc salt compounds; the Lewis base is one or more of imidazole, boron trifluoride amine complex, 2-phenylimidazole, 2-ethyl-4-methylimidazole and 4-dimethylaminopyridine.
8. The coverlay material composition of any one of claims 5-7, wherein the epoxy resin other than the fluorosilicone modified epoxy resin is a low dielectric epoxy resin having a dielectric constant of 3.5-6.0 and a dielectric loss of 0.005-0.008;
preferably, the epoxy resin other than the fluorosilicone modified epoxy resin is one or more of a dicyclopentadiene type novolac epoxy resin, a biphenyl type epoxy resin, and a naphthalene ring type epoxy resin.
9. The mulch film material composition according to any one of claims 5 to 7 wherein the curing agent is an organic amine curing agent and/or an organic anhydride curing agent; preferably, the organic amine curing agent is one or more of 4,4 '-diaminodiphenyl ether, 4' -diaminodiphenylmethane, 4 '-diaminodiphenylsulfone, 4' -bis (2,2 '-bistrifluoromethyl-4-aminophenoxy) benzene, 3', 5,5 '-tetramethyl-4, 4' -diaminodiphenylmethane; preferably, the organic acid anhydride curing agent is one or more of 4-methyl hexahydrophthalic anhydride, 4-methyl tetracyanophthalic anhydride, tetrahydrophthalic anhydride and hexahydrophthalic anhydride;
preferably, the flame retardant is a metal hydroxide and/or a phosphorus-containing compound, preferably the metal hydroxide is magnesium hydroxide and/or aluminum hydroxide, preferably the phosphorus-containing compound is one or more of trichloroethyl phosphate, triethyl phosphate, tricresyl phosphate, dimethyl methylphosphonate, bisphenol a-bis (diphenyl phosphate), tert-butylated triphenyl phosphate, diethyl ethylphosphate and dialkyl phosphate;
preferably, the toughening agent is one or more of polyurethane resin, nitrile rubber aniline resin, polyimide resin, styrene-butadiene rubber and styrene-butadiene-styrene block copolymer, the polyurethane resin is preferably polyaminomethyl ester resin, and the nitrile rubber is preferably carboxyl-terminated nitrile rubber and/or epoxy-terminated nitrile rubber.
10. The mulch film material composition of claims 5-7 wherein the mulch film material composition further comprises a solvent, preferably one or more of butanone, acetone, toluene, xylene, dimethylformamide, propylene glycol methyl ether; preferably, the solid content of the covering film material composition is 30-70 wt%.
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