CN111628736A - Traveling wave amplifier and information transmitting and receiving apparatus - Google Patents

Traveling wave amplifier and information transmitting and receiving apparatus Download PDF

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CN111628736A
CN111628736A CN201910150006.XA CN201910150006A CN111628736A CN 111628736 A CN111628736 A CN 111628736A CN 201910150006 A CN201910150006 A CN 201910150006A CN 111628736 A CN111628736 A CN 111628736A
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transmission line
equivalent
input
output
capacitance
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劳之豪
王昕�
向涛
商松泉
袁亚兴
刘德昂
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Shenzhen Aluksen Optoelectronics Co ltd
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Shenzhen Aluksen Optoelectronics Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

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Abstract

A traveling wave amplifier having an input port and an output port, comprising: an input transmission line having a first electrostatic protection circuit; an output transmission line having a second electrostatic protection circuit, and at least two amplifiers connected between the input transmission line and the output transmission line; the equivalent capacitance and inductance of each electrostatic protection circuit are matched with the capacitance and inductance equivalent to the transmission line of each amplifier. Thus, after the electrostatic protection circuit is added, the elements of the electrostatic protection circuit, which are part of the traveling wave amplifier, are also added to the input transmission line and the output transmission line without affecting the original electrical characteristics of the input transmission line and the output transmission line. By selecting proper element parameters, the electrostatic protection circuit does not influence the total bandwidth of the traveling wave amplifier, and the electrostatic discharge voltage range which can be borne by the traveling wave amplifier is increased by multiple times.

Description

Traveling wave amplifier and information transmitting and receiving apparatus
Technical Field
The application belongs to the technical field of amplifiers, and particularly relates to a traveling wave amplifier and information receiving and transmitting equipment.
Background
In the conventional broadband amplifier technology, a Traveling-Wave amplifier (TWA) is also called a distributed amplifier, which is a broadband amplification technology most widely applied. The traveling wave amplifier can realize larger flat gain in a very wide frequency band, and is widely applied to the fields of high-speed communication, microwave millimeter wave wireless communication, broadband wireless transceivers, high-resolution radars, imaging systems and the like. In the High-speed optical communication industry, for example, in the 100/200/400-Gbit/s High-speed optical communication system, a very High-bandwidth broadband amplifier is necessary, so a traveling wave amplifier using a High-electron mobility transistor (HEMT) is often used as a driver of a modulator because such a device has a very wide bandwidth structure and a very High breakdown voltage.
A travelling wave amplifier is a broadband amplifying circuit in which the input and output equivalent capacitances of transistors can be made equivalent in a transmission line, forming an LC (inductance-capacitance) ladder network. The input/output equivalent capacitance of the active device and the in-chip spiral inductor respectively form a grid line and a drain line of the amplifier, the grid line and the drain line are lumped parameter low-pass transmission lines with different characteristic impedances, an input signal is transmitted on the grid line and is added to the grid of the active device in different phases, and an amplified signal is obtained on the drain line through transconductance. When signals are transmitted in the same phase on the grid line and the drain line of each stage of the amplifying circuit, the amplified signals on the drain line are superposed in the same phase, and therefore broadband amplification is achieved.
Due to the characteristics of the traveling wave amplifier, if a conventional ESD (Electro-Static discharge) protection circuit is added to the input and output terminals of the traveling wave amplifier, the bandwidth of the traveling wave amplifier is seriously reduced, so that the input and output terminals of the conventional traveling wave amplifier cannot use the conventional ESD protection circuit for ESD protection, and the conventional traveling wave amplifier has poor electrostatic withstand voltage protection capability and low reliability.
Disclosure of Invention
In view of this, embodiments of the present application provide a traveling wave amplifier and an information transceiver, which aim to solve the problems of poor electrostatic withstand voltage protection capability and low reliability of the conventional traveling wave amplifier.
A first aspect of embodiments of the present application provides a travelling wave amplifier having an input port and an output port, the travelling wave amplifier circuit comprising:
an input transmission line connected to the input port and including a first electrostatic protection circuit and a plurality of first inductive elements connected in series, the first electrostatic protection circuit being adjacent to the input port side;
an output transmission line connected to the output port and including a second electrostatic protection circuit and a plurality of second inductive elements connected in series, the second electrostatic protection circuit being close to the output port side; and
at least two amplifiers connected between the input transmission line and the output transmission line;
the capacitance and the inductance equivalent to the input transmission line of the first electrostatic protection circuit are respectively matched with the input capacitance and the inductance equivalent to the input transmission line of each amplifier, and the capacitance and the inductance equivalent to the output transmission line of the second electrostatic protection circuit are respectively matched with the output capacitance and the inductance equivalent to the output transmission line of each amplifier.
In one embodiment, the equivalent capacitance and the equivalent inductance equivalent to the input transmission line of the first esd protection circuit are respectively consistent with the equivalent capacitance and the equivalent inductance equivalent to the input transmission line of each amplifier.
In one embodiment, the equivalent capacitance and the equivalent inductance equivalent to the output transmission line of the second esd protection circuit are respectively consistent with the equivalent capacitance and the equivalent inductance equivalent to the output transmission line of each amplifier.
In one embodiment, each of the amplifiers includes a transistor device having a gate connected to the input transmission line and a drain connected to the output transmission line.
In one embodiment, each of the transistor devices includes one or more transistors connected in cascade between a common terminal, an input transmission line, and an output transmission line.
In one embodiment, an input connection point is formed between adjacent first inductive elements on the input transmission line, an output connection point is formed between adjacent second inductive elements on the output transmission line, the first electrostatic protection circuit is connected to a first input connection point near the input port side, the second electrostatic protection circuit is connected to a first output connection point near the output port side, and each of the amplifying devices is connected in turn between the input connection point other than the first input connection point and the output connection point other than the first output connection point.
In one embodiment, the first electrostatic protection circuit includes a first diode and a second diode; the cathode of the first diode is connected with the power supply, and the anode of the first diode is connected with the first input connection point; and the cathode of the second diode is connected with the first input connection point, and the anode of the second diode is connected with a negative power supply or grounded.
In one embodiment, the second electrostatic protection circuit includes a third diode and a fourth diode; the negative electrode of the third diode is connected with the power supply, and the positive electrode of the third diode is connected with the first output connection point; and the cathode of the fourth diode is connected with the first output connection point, and the anode of the fourth diode is connected with a negative power supply or grounded.
In one embodiment, the circuit further comprises a plurality of matching capacitors connected between the output transmission line and the common terminal.
In one embodiment, the capacitance value of the matching capacitor is selected according to the capacitance value difference between the equivalent capacitance of the input transmission line and the equivalent capacitance of the output transmission line.
In one embodiment, the capacitance value of the matching capacitor is equal to the capacitance value difference between the equivalent capacitance of the input transmission line and the equivalent capacitance of the output transmission line.
A second aspect of embodiments of the present application provides an information-transceiving equipment including the traveling-wave amplifier described above.
The electrostatic protection circuit of the traveling wave amplifier is arranged in the transmission line of the input end and the transmission line of the output end, in order to ensure the bandwidth of the traveling wave amplifier, after the electrostatic protection circuit is added, the element of the electrostatic protection circuit is used as a part of the traveling wave amplifier and is added in the input transmission line and the output transmission line, the electrostatic protection circuit can select parameters according to the equivalent capacitance and the equivalent inductance of the amplifier equivalent in the input/output transmission line, so that the electrostatic protection circuit still needs to meet the bandwidth and the characteristic impedance corresponding to the cut-off frequency of the traveling wave amplifier, the original electrical characteristics of the input transmission line and the output transmission line are not influenced, and the electrostatic protection circuit does not influence the total bandwidth of; in addition, after the electrostatic protection circuit is added, the range of the electrostatic discharge voltage borne by the traveling wave amplifier can be increased by multiple times.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a traveling wave amplifier provided in an embodiment of the present application (for simplicity, a bias circuit of a transistor is not shown in order to explain the principle of the traveling wave amplifier);
fig. 2(a) is an exemplary circuit schematic of a first electrostatic protection circuit in the traveling wave amplifier shown in fig. 1;
fig. 2(B) is a schematic diagram of an equivalent capacitance and an equivalent inductance of the first electrostatic protection circuit shown in fig. 2 (a);
FIG. 3(A) is an exemplary circuit schematic of a second electrostatic protection circuit in the traveling wave amplifier shown in FIG. 1;
fig. 3(B) is a schematic diagram of an equivalent capacitance and an equivalent inductance of the second electrostatic protection circuit shown in fig. 3 (a);
fig. 4 is an exemplary circuit schematic of the equivalent capacitance of the input transmission line in the traveling wave amplifier shown in fig. 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In the traveling wave amplifiers, each amplifier has a parasitic capacitance, and the parasitic capacitances of the input and output terminals of the respective amplifiers, and the parasitic capacitance of the transmission line can be equivalent to those of the transmission line. The inductance in each amplifier and the parasitic inductance of the transmission line are also equivalent to those of the transmission line, and it can be seen that the electrical characteristics of the input transmission line are defined by the equivalent capacitance and the equivalent inductance, and the electrical characteristics of the output transmission line are also defined by the equivalent capacitance and the equivalent inductance. It should be noted that the inductive element on the transmission line of the traveling wave amplifier generally includes a parasitic inductance and an equivalent inductance equivalent to the link of the amplifier, but may also include a discrete inductive device connected in series on the link.
Referring to fig. 1, the traveling wave amplifier provided in the embodiment of the present application may be used in information transceiver, such as high-speed communication, broadband wireless transceiver, high-resolution radar, and imaging system. The travelling wave amplifier 10 provided in the embodiment of the present application has an input port 12 and an output port 14, and the travelling wave amplifier 10 includes an input transmission line 16, an output transmission line 18, and at least two amplifiers 19.
The input transmission line 16 is connected to the input port 12 and includes a first electrostatic protection circuit 162 and a plurality of first inductive elements 164 connected in series, the first electrostatic protection circuit 162 being adjacent to the input port 12 side.
In one embodiment, the first inductive elements 164 between any one of the amplifiers 19 have an inductance of L1, while the first and last first inductive elements 164 have an inductance of L1/2. Also, the input port 12 is provided at one end of the input transmission line 16, and the other end of the input transmission line 16 is connected to the common terminal through a resistor Rg.
The output transmission line 18 is connected to the output port 14, and includes a second electrostatic protection circuit 182 and a plurality of second inductive elements 184 connected in series, the second electrostatic protection circuit 182 being close to the output port 14 side. The first inductive element 164 and the second inductive element 184 may be lumped inductors or transmission line equivalent inductors, and the selection type depends on the operating frequency band and the environment.
In one embodiment, the second inductive element 184 between any one of the amplifiers 19 has an inductance of L2, while the first and last second inductive elements 184 have an inductance of L2/2. The output port 14 is provided at the output end of an output transmission line 18, and the input end of the output transmission line 18 is connected to the common terminal through a resistor Rd.
In this example, the resistors Rd and Rg are of the same value, matched to the impedance of the input and output transmission lines 16 and 18 respectively, to prevent reflections along the transmission lines, and the common terminal is typically ground, with the inductors L1 and L2 being the same.
An amplifier 19 is connected between the input transmission line 16 and the output transmission line 18. In this example, the amplifiers 19 are connected in parallel in the same direction, and an input signal is transmitted on the input transmission line 16 and applied to the inputs of the amplifiers 19 in different phases, and an amplified signal is obtained on the output transmission line 18 through transconductance. When signals are transmitted in phase at the input and output of each stage of amplifier 19, the amplified signals on output transmission line 18 are superimposed in phase, thereby achieving broadband amplification. In other embodiments, the amplifiers 19 may be connected in anti-parallel.
In one embodiment, amplifier 19 comprises a transistor device having a gate connected to input transmission line 16 and a drain connected to output transmission line 18. Thus, the input transmission line 16 is a gate line, and the output transmission line 18 is a drain line. Each transistor arrangement 19 comprises one or more transistors 192 cascaded between the common terminal and the output transmission line 18. In this example, each transistor device is shown as two vertically cascaded field effect transistors 192. The gate of one of the fets 192 is connected to the input transmission line 16 and the drain of the other fet 192 is connected to the output transmission line 18. In other embodiments, each transistor device represents an amplification requirement for a signal, and may be configured as one field effect transistor, or may be configured as three or more cascaded field effect transistors.
Referring to fig. 1, 2(a), 2(B), 3(a) and 3(B), the parasitic capacitance Cesd1 equivalent to the input transmission line 16 of the first esd protection circuit 162 is selected to match according to the capacitance equivalent to the input transmission line 16 of each amplifier 19, and the parasitic capacitance Cesd2 equivalent to the output transmission line 18 of the second esd protection circuit 182 is selected to match according to the capacitance equivalent to the output transmission line 18 of each amplifier 19. Meanwhile, the inductance equivalent to the input transmission line 16 of the first electrostatic protection circuit 162 (i.e., the parasitic inductance thereof) is selected to match according to the inductance equivalent to the input transmission line 16 of each amplifier 19, and the inductance equivalent to the output transmission line 18 of the second electrostatic protection circuit 182 (i.e., the parasitic inductance thereof) is selected to match according to the inductance equivalent to the output transmission line 18 of each amplifier 19.
Each amplifier 19 has an input (gate-source) capacitance Cin and an output (source-drain) capacitance Cout, and in the traveling wave amplifier 10, the input capacitance Cin and the output capacitance Cout of the amplifier 19 can be equivalent to those in the input/ output transmission lines 16, 18, i.e., LC ladder networks. Referring to fig. 4, the equivalent capacitance C of the input transmission line 16 includes the equivalent of the input capacitance Cin of each amplifier 19 to the input transmission line 16 and the parasitic capacitance C of each first inductive element chainL1(ii) a Likewise, the equivalent capacitance of the output transmission line 18 includes the output capacitance Cout of each amplifier 19 equivalent to the output transmission line 18 and the parasitic capacitance of each second inductive element chain. In this example, the element parameters of the first inductive element chain input transmission line and the second inductive element chain are the same, and therefore the parasitic capacitances are also considered to be the same. So that the electrostatic protection circuits 162, 182 do not affect the total bandwidth of the travelling wave amplifier 10, then two electrostatic protection circuits162. The equivalent parasitic capacitances Cesd1, Cesd2 and the equivalent parasitic inductance values of 182 will be matched according to the input capacitance Cin, the output capacitance Cout and the equivalent parasitic inductance value of the amplifier 19 in the transmission line, respectively. Characteristic impedance of the improved travelling wave amplifier 10
Figure BDA0001981256980000071
And cut-off frequency
Figure BDA0001981256980000072
In keeping with a standard traveling wave amplifier without the electrostatic protection circuits 162, 182. Meanwhile, the range of the electrostatic discharge voltage endured by the traveling wave amplifier 10 is increased by several times. In this example, the capacitance and the equivalent (parasitic) inductance of the equivalent (parasitic) capacitor Cesd1 equivalent to the input transmission line 16 of the first electrostatic protection circuit 162 are respectively equal to the capacitance and the equivalent (parasitic) inductance of the input capacitor Cin equivalent to the input transmission line 16 of each amplifier 19. The capacitance and the equivalent (parasitic) inductance of the equivalent (parasitic) capacitor Cesd2 equivalent to the output transmission line 18 of the second esd protection circuit 182 are respectively identical to the capacitance and the equivalent (parasitic) inductance of the output capacitor Cout equivalent to the output transmission line 18 of each amplifier 19.
Referring to fig. 1, 2(a) and 3(a), an input connection point is formed between adjacent first inductive elements 164 on the input transmission line 16, an output connection point is formed between adjacent second inductive elements 184 on the output transmission line 18, the first electrostatic protection circuit 162 is connected to a first input connection point on the side close to the input port 12, that is, the first electrostatic protection circuit 162 is connected to the input port 12 through one (first) first inductive element 164, the second electrostatic protection circuit 182 is connected to a first output connection point on the side close to the output port 14, that is, the second electrostatic protection circuit 182 is connected to the output port 14 through one (last) second inductive element 184, and each amplifier 19 is connected between an input connection point other than the first input connection point and an output connection point other than the first output connection point in turn. In this way, the equivalent capacitance at each input connection point is made uniform, and the equivalent capacitance at each output connection point is also made uniform, so that the parameters of the respective connection points of the input transmission line 16 and the output transmission line 18 are matched uniformly so as not to affect the overall bandwidth.
In one embodiment, referring to fig. 2(a) and 2(B), the first esd protection circuit 162 includes a first diode D1 and a second diode D2; the cathode of the first diode D1 is connected with the power supply VDD, and the anode is connected with the first input connection point; the cathode of the second diode D2 is connected to the first input connection point and the anode is connected to the negative power supply VSS or ground. The sizes of the first diode D1 and the second diode D2 need to be strictly selected, so that the capacitance values of the total equivalent (parasitic) capacitance Cesd1 of the first diode D1 and the second diode D2 and the capacitance value of the input transmission line capacitance Cin equivalent to each stage of the travelling wave amplifier 10 are kept consistent; and the inductance equivalent to the input transmission line 16 at the two ends of the connection point of the first diode D1 and the second diode D2 is L1/2, respectively, so that the total equivalent inductance after the right transmission line is connected in series with the original input transmission line is L1. Similarly, referring to fig. 3(a) and 3(B), the second esd protection circuit 182 includes a third diode D3 and a fourth diode D4; the cathode of the third diode D3 is connected with the power supply VDD, and the anode is connected with the first output connection point; the cathode of the fourth diode D4 is connected to the first output node, and the anode is connected to the negative power supply VSS or ground. The sizes of the third diode D3 and the fourth diode D4 need to be strictly selected, so that the total equivalent (parasitic) capacitance Cesd2 of the third diode D3 and the fourth diode D4 and the capacitance value equivalent to the output transmission line capacitance Cout of each stage of amplifier 19 in the traveling wave amplifier 10 are kept consistent; and the two ends of the connection point of the third diode D3 and the fourth diode D4 are equivalent to the inductance of the output transmission line 18, which is L2/2, so that the total equivalent inductance of the left transmission line and the original output transmission line after being connected in series is L2. Depending on the polarity of the electrostatic protection circuit 162, 182 applied to the circuit input, the high voltage discharge enters the positive or negative power supply loop through a diode connected to the positive or negative pole. In this way, the electrostatic protection circuits 162 and 182 do not affect the total bandwidth of the traveling wave amplifier 10, and are not significantly reduced by the addition of the electrostatic protection circuits 162 and 182. The characteristic impedance and cut-off frequency of the improved travelling-wave amplifier are consistent with those of a standard travelling-wave amplifier without an electrostatic protection circuit.
Two signal waves propagate through the transmission line as the traveling wave amplifier 10 taps in the amplified signal, which is represented as a "leaky line wave" corresponding to the output transmission line 18 and a "grating line wave" corresponding to the input transmission line 16. For proper signal amplification, the two waves must have the same speed, which is required to be satisfied only when the input capacitance Cin is equal to the output capacitance Cout and L1 is equal to L2. Whereas in a typical travelling wave amplifier the input capacitance Cin is different from the output capacitance Cout, typically the input capacitance Cin is higher than the output capacitance Cout. Therefore, setting the impedance matching condition in a typical traveling wave amplifier causes a mismatch in propagation speeds in the two transmission lines. Specifically, the velocity of the drain wave is greater than the velocity of the gate wave.
Thus, in another embodiment of the present application, referring to fig. 1, the traveling-wave amplifier 10 further includes a plurality of matching capacitors Cd connected between the output transmission line 18 and the common terminal. The output capacitor Cout of the matching capacitor Cd matching amplifier 19 is used to match the input capacitor Cin with the matching capacitor Cd + the output capacitor Cout, so that the propagation speeds of the "leakage line wave" and the "gate line wave" in the two transmission lines are matched. Therefore, the capacitance value of the matching capacitor Cd is selected according to the capacitance value difference between the equivalent capacitance of the input transmission line 16 and the equivalent capacitance of the output transmission line 18, specifically, according to the capacitance value difference between the input capacitor Cin and the output capacitor Cout. Specifically, the capacitance of the matching capacitor Cd is equal to the capacitance difference between the equivalent capacitance of the input transmission line 16 and the equivalent capacitance of the output transmission line 18, that is, the matching capacitor Cd is equal to the input capacitor Cin — the output capacitor Cout.
In order to prove the technical effect of the traveling wave amplifier 10 provided in the embodiment of the present application, the traveling wave amplifier 10 circuit chip without the electrostatic protection circuit and the traveling wave amplifier 10 circuit chip with the electrostatic protection circuit provided in the embodiment of the present application are compared in the test, and the protection capabilities of the two chips for electrostatic protection are compared. The test is directed at a Human body discharge mode (HBM), the test method adopts a method described in standard ANSI/ESDA/JEDEC JS-001-: the voltage range of the chip subjected to electrostatic discharge is 125V to less than 250V, while the voltage range of the chip subjected to electrostatic discharge is 500V to less than 1000V by adopting the traveling wave amplifier 10 circuit chip added with the electrostatic protection circuit in the method of the application. Test results prove that the traveling wave amplifier 10 circuit chip added with the electrostatic protection circuit by adopting the method in the application has obviously enhanced protection capability on electrostatic discharge.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.

Claims (10)

1. A traveling wave amplifier having an input port and an output port, the traveling wave amplifier comprising:
an input transmission line connected to the input port and including a first electrostatic protection circuit and a plurality of first inductive elements connected in series, the first electrostatic protection circuit being adjacent to the input port side;
an output transmission line connected to the output port and including a second electrostatic protection circuit and a plurality of second inductive elements connected in series, the second electrostatic protection circuit being close to the output port side; and
at least two amplifiers connected between the input transmission line and the output transmission line;
the first electrostatic protection circuit is equivalent to the capacitance and the inductance of the input transmission line and is respectively matched with the capacitance and the inductance of each amplifier which are equivalent to the input transmission line, and the second electrostatic protection circuit is equivalent to the capacitance and the inductance of the output transmission line and is respectively matched with the capacitance and the inductance of each amplifier which are equivalent to the output transmission line.
2. The traveling-wave amplifier according to claim 1, wherein an equivalent capacitance value and an equivalent inductance value equivalent to said input transmission line of said first electrostatic protection circuit are respectively identical to an equivalent capacitance value and an equivalent inductance value equivalent to said input transmission line of each of said amplifiers;
the equivalent capacitance and the equivalent inductance equivalent to the output transmission line of the second electrostatic protection circuit are respectively consistent with the equivalent capacitance and the equivalent inductance equivalent to the output transmission line of each amplifier.
3. The travelling wave amplifier according to claim 1 or 2, wherein each of said amplifiers comprises a transistor means, a gate of said transistor means being connected to said input transmission line and a drain of said transistor means being connected to said output transmission line.
4. The traveling wave amplifier according to claim 3, wherein each of said transistor means comprises one or more transistors connected in cascade between a common terminal, an input transmission line and an output transmission line.
5. The traveling wave amplifier according to claim 1 or 2, wherein an input connection point is formed between adjacent first inductive elements on said input transmission line, an output connection point is formed between adjacent second inductive elements on said output transmission line, said first electrostatic protection circuit is connected to a first input connection point near said input port side, said second electrostatic protection circuit is connected to a first output connection point near said output port side, and each of said amplifying devices is connected in turn between said input connection point other than said first input connection point and said output connection point other than said first output connection point.
6. The traveling wave amplifier of claim 5, wherein the first electrostatic protection circuit comprises a first diode and a second diode; the negative electrode of the first diode is connected with a positive power supply, and the positive electrode of the first diode is connected with the first input connection point; the cathode of the second diode is connected with the first input connection point, and the anode of the second diode is connected with a negative power supply or grounded;
the second electrostatic protection circuit comprises a third diode and a fourth diode; the negative electrode of the third diode is connected with the power supply, and the positive electrode of the third diode is connected with the first output connection point; and the cathode of the fourth diode is connected with the first output connection point, and the anode of the fourth diode is connected with a negative power supply or grounded.
7. The traveling wave amplifier of claim 1, further comprising a plurality of matching capacitors connected between the output transmission line and a common.
8. The traveling-wave amplifier according to claim 7, wherein a capacitance value of said matching capacitance is selected based on a difference between a capacitance value of an equivalent capacitance of said input transmission line and an equivalent capacitance of said output transmission line.
9. The traveling-wave amplifier according to claim 8, wherein a capacitance value of said matching capacitance is equal to a capacitance value difference of an equivalent capacitance of said input transmission line and an equivalent capacitance of said output transmission line.
10. An information transmission/reception device comprising the traveling-wave amplifier according to any one of claims 1 to 9.
CN201910150006.XA 2019-02-28 2019-02-28 Traveling wave amplifier and information transmitting and receiving apparatus Pending CN111628736A (en)

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