CN111628394A - Echo wall mode organic special-shaped resonant cavity and preparation method and application thereof - Google Patents
Echo wall mode organic special-shaped resonant cavity and preparation method and application thereof Download PDFInfo
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- CN111628394A CN111628394A CN202010538396.0A CN202010538396A CN111628394A CN 111628394 A CN111628394 A CN 111628394A CN 202010538396 A CN202010538396 A CN 202010538396A CN 111628394 A CN111628394 A CN 111628394A
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/082—Construction or shape of optical resonators or components thereof comprising three or more reflectors defining a plurality of resonators, e.g. for mode selection or suppression
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Abstract
The invention relates to a whispering gallery mode organic special-shaped resonant cavity and a preparation method and application thereof, and belongs to the field of optical devices. The preparation method comprises the following steps: dissolving organic semiconductor molecules in an organic good solvent to obtain an organic semiconductor solution; adding a poor solvent and an organic semiconductor solution into a container, wherein the organic semiconductor solution is not in contact with the poor solvent and is above the poor solvent; and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized. The preparation method is simple and easy to implement, and the spindle-like resonant cavity with a perfect boundary and a super-smooth surface is obtained, the resonant cavity has good crystallinity, does not have impurities and optical defects, can effectively reduce the coupling output loss of light, and achieves the purpose of high-quality factors.
Description
Technical Field
The invention relates to a whispering gallery mode organic special-shaped resonant cavity and a preparation method and application thereof, and belongs to the field of optical devices.
Background
Laser light has been developed for a long time as a new light source, and is widely used because of its advantages such as monochromaticity, good directivity, and higher brightness. Although the advantages of laser are many, with the development of society, people have higher requirements on the integration level and the size of optical devices, and therefore, research on micro-nano lasers becomes a current research hotspot. The laser emission needs to meet three elements, namely an excitation source which provides excitation energy required by forming laser emission; the gain medium is an energy level structure system for providing formed laser; and the third is an optical resonant cavity which provides a feedback amplification mechanism. Generally speaking, the first two are uncontrollable factors, and therefore, to achieve the reduction of the laser size, the key point is to reduce the size of the optical cavity, so that it is an important research direction to prepare a tiny optical cavity with good laser performance.
Currently, the commonly used optical resonances are mainly Fabry-perot (F-P) resonators, whispering-gallery mode (WGM) resonators. The quality factor (Q value) and the directional output of the resonant cavity are two important indicators for measuring the quality of the microcavity. The F-P resonant cavity mainly utilizes photons to generate gain light after the photons are reflected and transmitted back and forth between two end faces which are parallel to each other, when the optical gain overcomes the limitation of the resonant cavity, the gain light is emitted from the end faces of the nanowire structure in a laser mode, but the reflectivity of two end points of the gain light is relatively small, so that the Q value of the gain light is relatively low. The WGM resonant cavity realizes total reflection of photons by utilizing a closed and bent edge, so that the WGM resonant cavity has a high Q value, but the WGM resonant cavity is mostly circular, so that radiation in a resonant cavity plane mode is emitted isotropically, and light rays in the cavity are difficult to output in a certain direction. Therefore, designing and preparing an optical resonant cavity with high Q value and directional output is very important for micro-nano lasers. At present, researchers have conducted many researches in this respect, from the initial waveguide coupling structures such as wire coil coupling and wire loop coupling to the special-shaped cavity in recent years, so as to solve the problem. But in general, the strategy of preparing the special-shaped cavity can better solve the problem, because the special-shaped cavity is formed by the evolution of a circular resonant cavity, and the special-shaped cavity and the circular structure are different, so that the directional output can be realized. Therefore, the invention adopts an anti-solvent diffusion induced self-assembly method to prepare the whispering gallery mode organic special-shaped resonant cavity, which not only has the advantages of the whispering gallery mode resonant cavity, but also can realize directional output.
Disclosure of Invention
The invention provides a preparation method of a whispering gallery mode organic special-shaped resonant cavity, which is simple and feasible, and obtains a spindle-like resonant cavity with a perfect boundary and an ultra-smooth surface, the resonant cavity has good crystallinity and no impurities or optical defects, can effectively reduce the coupling output loss of light, and achieves the purpose of having a high-quality factor, and the length-diameter ratio of the spindle-like resonant cavity can be adjusted by changing conditions, so that the laser utilization rate of the spindle-like resonant cavity can be adjusted, and the preparation method is very significant for constructing a high-quality factor micro-nano laser with directional output.
The invention provides a preparation method of a whispering gallery mode organic special-shaped resonant cavity, which comprises the following steps: dissolving organic semiconductor molecules in an organic good solvent to obtain an organic semiconductor solution; adding a poor solvent and an organic semiconductor solution into a container, wherein the organic semiconductor solution is not in contact with the poor solvent and is above the poor solvent; and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized.
The organic semiconductor molecule is 4,4' -bis [4- (di-p-tolylamino) styryl ] biphenyl.
The 4,4' -bis [4- (di-p-tolylamino) styryl ] biphenyl of the present invention is abbreviated as DPAVBi.
In the invention, the good organic solvent is dichloromethane.
The concentration of the organic semiconductor solution is preferably 2-10 mmol/L.
In the present invention, the poor solvent is preferably toluene.
The volume ratio of the organic semiconductor solution to the poor solvent is preferably 0.1-0.3: 3-7.
The invention also aims to provide the whispering gallery mode organic special-shaped resonant cavity prepared by the method.
The invention further aims to provide an application of the whispering gallery mode organic special-shaped resonant cavity in a micro-nano laser.
Compared with the prior art, the invention has the beneficial effects that:
the method is simple and easy to operate, the organic semiconductor solution is not in contact with a poor solvent, the volatile poor solvent fills the whole container and influences the volatilization of the solvent in the organic semiconductor solution, molecules of the poor solvent can be rapidly diffused into the organic semiconductor solution, so that the organic semiconductor molecules are induced to be gradually separated out, crystallized and assembled in a liquid phase, and a large number of organic molecule assemblies are obtained after all the solvents are volatilized.
Through a series of appearance and structure representations, the organic assembly obtained by the method has smooth curved surface edges and two linear tips, and is a special-shaped spindle-like structure. It has high crystallinity, smooth surface and no obvious defect, and these advantages can effectively reduce the scattering optical loss of the material. In addition, the side end surface is also quite regular, so that the reflection waveguide of the light can be realized. Therefore, the spindle can be used as an ideal material of an optical resonant cavity. The inventor tests the optical performance of the material, finds that the material can limit the excited fluorescence almost completely in the spindle, and compared with the integral spindle-like body and the edge of the spindle-like body, two top ends of the spindle-like body have more obvious green emission, which shows that the structure has the possibility of realizing a micro laser with directional output. Therefore, the material can be used as an ideal resonant cavity of a high-Q-value micro-nano laser for realizing directional output.
In addition, the inventor also improves the material, and prepares the spindle-like bodies with different length-diameter ratios by regulating the concentration of the organic semiconductor solution, wherein the length-diameter ratio is in a regulation range of 1.2-4.1, and the length-diameter ratio refers to the ratio of the longest connecting line between two endpoints to the longest diameter perpendicular to the longest connecting line (wherein the maximum value of the connecting line between the two endpoints is taken as the diameter of the spindle-like body). The lower the concentration of the organic semiconductor solution is, the thinner the similar spindle body is, and the larger the length-diameter ratio is, through the simple regulation and control means, the two-dimensional organic spindle bodies with different length-diameter ratios are prepared, and the performance of the spindle bodies is tested, and the spindle bodies are WGM type optical resonant cavities, and the output directions of the spindle bodies are 0 degree and 180 degrees. Along with the increase of the length-diameter ratio, the divergence angle of laser becomes smaller, and the corresponding laser utilization rate is improved. Therefore, by this method, an optical resonator having a small divergence angle can be prepared, which is very important for designing and preparing a nano laser having a directional output, a low threshold value and a high quality.
Drawings
In the figure 15 of the accompanying drawings of the invention,
fig. 1 is a flow chart of the preparation of the whispering gallery mode organic heteroresonator described in examples 1-3.
FIGS. 2a and 2b are scanning electron micrographs of a whispering gallery mode organic heteroresonator prepared in example 1, with scales of 50 μm and 5 μm, respectively; FIG. 2c is an AFM photograph of the whispering gallery mode organic heteroresonator prepared in example 1, with a 2 μm scale;
FIG. 3a is a TEM image of the whispering gallery mode organic special-shaped resonator prepared in example 1, with an inset being a selected area electron diffraction pattern and a scale of 5 nm; FIG. 3b is a top part of an XRD spectrum of the whispering gallery mode organic heteroresonator prepared in example 1; the XRD spectrum of DPAVBi powder is shown in the lower part of fig. 3 b.
FIG. 4a is a fluorescent microscope photograph of a whispering gallery mode organic heteroresonator prepared in example 1, with a scale of 70 μm and 10 μm; FIG. 4b shows the upper part of the fluorescence spectrum of the DPAVBi solution; the lower part of FIG. 4b is the fluorescence spectrum of the whispering gallery mode organic heteroresonator prepared in example 1.
FIG. 5a is a PL spectrum of the whispering gallery mode organic special-shaped resonator prepared in example 1 under different pumping power excitation conditions, and an inset is a fluorescence photograph of the whispering gallery mode organic special-shaped resonator prepared in example 1, with a ruler of 10 μm; fig. 5b is a plot of PL peak intensity (line2) and half peak width (line1) versus pump power for the whispering gallery mode organic heteroresonator prepared in example 1.
FIG. 6a is a PL spectrum and a corresponding fluorescent photograph of different diameter whispering gallery mode organic special-shaped resonant cavities prepared in example 1 with scales of 25 μm, 30 μm, 36 μm and 40 μm, respectively, and FIG. 6b is a mode pitch λ of the whispering gallery mode organic special-shaped resonant cavity prepared in example 12A graph of/Δ λ versus its diameter L; fig. 6c is a graph of the quality factor Q of the whispering gallery mode organic heteroresonator prepared in example 1 as a function of its diameter L.
Fig. 7 is a far field distribution diagram of the whispering gallery mode organic heteroresonator prepared in example 1.
FIG. 8a is a scanning electron micrograph of a whispering gallery mode organic heteroresonator prepared in example 2, with a 12 μm scale; FIG. 8b is a fluorescent microscope photograph of the whispering gallery mode organic cavity resonator prepared in example 2, with a 75 μm ruler.
FIG. 9a is a PL spectrum of the whispering gallery mode organic special-shaped resonator prepared in example 2 under different pumping power excitation conditions, and an inset is a fluorescent photograph of the whispering gallery mode organic special-shaped resonator prepared in example 2, with a ruler of 20 μm; fig. 9b is a plot of PL peak intensity (line2) and half peak width (line1) versus pump power for the whispering gallery mode organic heteroresonator prepared in example 2.
FIG. 10a is a PL spectrum and corresponding fluorescence photograph of a whispering gallery mode organic heteroresonator prepared in example 2, with scales of 6 μm, 4.5 μm, 7 μm, and 9 μm, respectively; FIG. 10b shows the mode spacing λ of the whispering gallery mode organic heteroresonator prepared in example 22A graph of/Δ λ versus its diameter L; fig. 10c is a graph of the quality factor Q of the whispering gallery mode organic heteroresonator prepared in example 2 as a function of its diameter L.
Fig. 11 is a far field distribution diagram of a whispering gallery mode organic heteroresonator prepared in example 2.
FIG. 12 is a fluorescent photomicrograph of the whispering gallery mode organic heteroresonator prepared in example 3, with a 75 μm scale.
FIG. 13a is a PL spectrum of the whispering gallery mode organic special-shaped resonator prepared in example 3 under different pumping power excitation conditions, and the inset is a fluorescent photograph of the whispering gallery mode organic special-shaped resonator prepared in example 3 with a ruler of 10 μm; fig. 13b is a plot of PL peak intensity (line2) and half peak width (line1) versus pump power for the whispering gallery mode organic heteroresonator prepared in example 3.
FIG. 14a is a PL spectrum and corresponding fluorescence photograph of a whispering gallery mode organic heteroresonator prepared in example 3, with scales of 43 μm, 25 μm, and 30 μm, respectively; FIG. 14b shows the mode spacing λ of the whispering gallery mode organic heteroresonator prepared in example 32A plot of/Δ λ versus its diameter L, and FIG. 14c is a plot of Q-value versus its diameter L for the whispering gallery mode organic heteroresonator prepared in example 3.
Fig. 15 is a far field distribution diagram of the whispering gallery mode organic heteroresonator prepared in example 3.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to examples, but it will be understood by those skilled in the art that the following examples are only illustrative of the present invention and should not be construed as limiting the scope of the present invention. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The features and properties of the present invention are further described in detail below with reference to examples:
example 1
A preparation method of a whispering gallery mode organic special-shaped resonant cavity comprises the following steps:
dissolving DPAVBi in dichloromethane to obtain 10mmol/L DPAVBi solution;
adding 0.5mL of toluene into a container, placing a platform higher than the toluene liquid level in the container, placing a silicon wafer on the platform, dripping 20 mu of LDPAVBi solution on the silicon wafer, and respectively ultrasonically cleaning the silicon wafer by using acetone, ethanol and deionized water before use;
and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized.
The prepared DPAVBi special-shaped resonant cavity is characterized and subjected to performance detection, and the results are as follows:
from fig. 2(a) and (b), the obtained assembly has a uniform size, and the material has smooth curved edges and linear apex angles, and is a spindle-like structure. From fig. 2(c), the DPAVBi cavity resonator has smooth sides and surfaces, a thickness of about 220nm, and an aspect ratio in the range of 1.2-1.9.
As shown in FIG. 3(a), the DPAVBi shaped resonator is solid and has a complete structure without obvious defects, and the structure is single crystal as can be seen from diffraction spots in the diffraction pattern of the electron selective area at the upper right corner. From fig. 3(b), the diffraction peak is sharp, indicating that the crystallinity of the resonator is good and there are no significant defects.
From fig. 4(a), the DPAVBi shaped resonator can confine the excited fluorescence well inside the cavity, and it can be observed that the fluorescence at the tip is slightly brighter than the middle part of the resonator, illustrating the directional emission characteristic of the structure. As shown in FIG. 4(b), the DPAVBi resonator can also emit fluorescence, and is approximately the same as the excitation state in solution, with the strongest excitation wavelength in solution being 338nm, the strongest emission wavelength being 485nm, the strongest excitation wavelength of the spindle being 352nm, and the strongest emission wavelength being 495 nm.
By performing laser performance tests on the DPAVBi shaped resonator, it is found that in fig. 5(a), the emission peak intensity around 495nm in the emission spectrum gradually increases with the increase of the pump power, and when the laser pump power exceeds its own threshold, the emission spectrum around 495nm suddenly increases and forms a group of sharp peaks. In FIG. 5(b), the relationship between the PL peak intensity and the pumping power of the DPAVBi cavity shows a nonlinear behavior, which confirms that the cavity can emit laser light, and the calculation results show that the excitation threshold is 4.67 muJ-cm-2。
From fig. 6(a), the DPAVBi cavity resonator can perform optical gain on incident light. Obtained from the upper part of FIG. 6(b), λ2The linear relation between the/delta lambda and the diameter L of the resonant cavity can indicate that the material is a WGM resonant cavity. Derived from the lower part of FIG. 6(b), the quality factor Q is in the order of 103The resonant cavity has excellent performance and can effectively reduce the coupling output loss of light. Therefore, the special-shaped resonant cavity can be used as a gain medium and a WGM resonant cavity at the same time, other laser dyes are not needed to be added, laser emission behaviors can be generated under the condition of optical pumping, and the Q value of the quality factor is also at a higher level.
From fig. 7, the laser output directions of the special-shaped resonant cavity are 0 ° and 180 °, but the divergence angles of the two output directions are relatively large, 60 °, and the output intensity is approximately the same in the whole divergence angle region.
Example 2
A preparation method of a whispering gallery mode organic special-shaped resonant cavity comprises the following steps:
dissolving DPAVBi in dichloromethane to obtain 5mmol/L DPAVBi solution;
adding 0.5mL of toluene into a container, placing a platform higher than the toluene liquid level in the container, placing a silicon wafer on the platform, dripping 20 mu of LDPAVBi solution on the silicon wafer, and respectively ultrasonically cleaning the silicon wafer by using acetone, ethanol and deionized water before use;
and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized.
The prepared DPAVBi special-shaped resonant cavity is characterized and subjected to performance detection, and the results are as follows:
from fig. 8(a), the obtained assembly has smooth curved edges and linear apex angles, and is a fusiform structure with a relatively complete structure. From fig. 8(b), the DPAVBi shaped resonator has a uniform size, the length-diameter ratio is calculated to be in the range of 2.0-2.6, and the material can confine the excited fluorescence well inside the cavity, and the fluorescence at the tip is observed to be brighter than the middle part of the spindle, which illustrates the characteristic of directional output of the structure.
By performing laser performance tests on the DPAVBi shaped resonator, it is found that in fig. 9(a), the emission peak intensity around 495nm in the emission spectrum gradually increases with the increase of the pump power, and when the laser pump power exceeds its own threshold, the emission spectrum around 495nm suddenly increases and forms a group of sharp peaks. In FIG. 9(b), the relationship between the PL peak intensity and the pump power of the DPAVBi cavity exhibits a nonlinear behavior, which confirms that the cavity can emit laser light, and the calculation results show that the excitation threshold is 5.77 μ J-cm-2。
From fig. 10(a), the DPAVBi cavity resonator can perform optical gain on incident light. Obtained from the upper part of FIG. 10(b), λ2The linear relation between the/delta lambda and the resonant cavity diameter L can indicate that the material is a WGM resonant cavity. The quality factor Q is in the order of 10, as shown in the lower part of FIG. 10(b)3The resonant cavity has excellent performance and can effectively reduce the coupling output loss of light. Therefore, the special-shaped resonant cavity can be used as a gain medium and a WGM resonant cavity at the same time, other laser dyes are not needed to be added, laser emission behaviors can be generated under the condition of optical pumping, and the Q value of the quality factor is also at a higher level.
As shown in fig. 11, the laser output directions of the DPAVBi special-shaped resonator are 0 ° and 180 °, the divergence angles of the two output directions are still 60 °, but the output intensities in the whole divergence angle region are different, the intensities at 0 ° and 180 ° are the maximum, and the output intensities at other angles are lower, which indicates that the divergence angles tend to decrease, thereby proving that the utilization rate of the laser can be controlled by increasing the length-diameter ratio, so that the laser can be emitted at an angle as much as possible.
Example 3
A preparation method of a whispering gallery mode organic special-shaped resonant cavity comprises the following steps:
dissolving DPAVBi in dichloromethane to obtain 2mmol/L DPAVBi solution;
adding 0.5mL of toluene into a container, placing a platform higher than the toluene liquid level in the container, placing a silicon wafer on the platform, dripping 20 mu of LDPAVBi solution on the silicon wafer, and respectively ultrasonically cleaning the silicon wafer by using acetone, ethanol and deionized water before use;
and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized.
The prepared DPAVBi special-shaped resonant cavity is characterized and subjected to performance detection, and the results are as follows:
from fig. 12, the obtained assembly has smooth curved surface edge and linear vertex angle, and the structure is relatively complete and is a spindle-like structure. The DPAVBi special-shaped resonant cavity has approximately same length, the length-diameter ratio is calculated to be in the range of 3.5-4.1, the resonant cavity can well confine excited fluorescence in the cavity, and the fluorescence at the tip is observed to be brighter than the middle part of the spindle, which illustrates the characteristic of directional output of the structure.
By performing laser performance tests on the DPAVBi shaped resonator, it is found that in fig. 13(a), the emission peak intensity around 495nm in the emission spectrum gradually increases with the increase of the pump power, and when the laser pump power exceeds its own threshold, the emission spectrum around 495nm suddenly increases and forms a group of sharp peaks. In FIG. 13(b), the relationship between the PL peak intensity and the pump power for the DPAVBi cavity shows a non-linear behavior, which demonstratesThe resonant cavity can emit laser, and the excitation threshold value can be calculated to be 58.75 mu J cm-2The laser threshold at this time is larger than that of the DPAVBi special-shaped resonant cavity prepared previously, but the overall laser threshold is at a lower level in the view of combining the three embodiments.
From fig. 14(a), the DPAVBi cavity resonator can perform optical gain on incident light. Obtained from the upper part of FIG. 14(b), λ2The linear relation between the/delta lambda and the resonant cavity diameter L can indicate that the material is a WGM resonant cavity. The quality factor Q is in the order of 10, as shown in the lower part of FIG. 14(b)3The resonant cavity has excellent performance and can effectively reduce the coupling output loss of light. Therefore, the special-shaped resonant cavity can be used as a gain medium and a WGM resonant cavity at the same time, other laser dyes are not needed to be added, laser emission behaviors can be generated under the condition of optical pumping, and the Q value of the quality factor is also at a higher level.
As shown in fig. 15, the laser output directions of the DPAVBi special-shaped resonant cavity are 0 ° and 180 ° and the output intensity is the maximum, and the exit intensities at other angles are low, which indicates that the aspect ratio is further increased, the laser divergence angle can be reduced, the laser utilization rate is increased, and the laser exits from one angle.
Claims (8)
1. A preparation method of a whispering gallery mode organic special-shaped resonant cavity is characterized by comprising the following steps: the preparation method comprises the following steps:
dissolving organic semiconductor molecules in an organic good solvent to obtain an organic semiconductor solution;
adding a poor solvent and an organic semiconductor solution into a container, wherein the organic semiconductor solution is not in contact with the poor solvent and is above the poor solvent;
and covering the container with a cover to ensure that the container is not completely sealed, and obtaining the whispering gallery mode organic special-shaped resonant cavity after the solvent is volatilized.
2. The method for preparing the whispering gallery mode organic special-shaped resonant cavity according to claim 1, wherein: the organic semiconductor molecule is 4,4' -bis [4- (di-p-tolylamino) styryl ] biphenyl.
3. The method for preparing the whispering gallery mode organic special-shaped resonant cavity according to claim 2, characterized in that: the good organic solvent is dichloromethane.
4. The method for preparing the whispering gallery mode organic special-shaped resonator according to claim 3, wherein: the concentration of the organic semiconductor solution is 2-10 mmol/L.
5. The method for preparing the whispering gallery mode organic special-shaped resonant cavity according to claim 4, wherein: the poor solvent is toluene.
6. The method for preparing the whispering gallery mode organic special-shaped resonant cavity according to claim 5, wherein: the volume ratio of the organic semiconductor solution to the poor solvent is 0.1-0.3: 3-7.
7. A whispering gallery mode organic heteroresonator made by the method of claim 1, 2, 3, 4, 5 or 6.
8. The application of the whispering gallery mode organic shaped resonator of claim 7 in micro-nano lasers.
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001061395A1 (en) * | 2000-02-17 | 2001-08-23 | Cquint Communications Corporation | Resonant optical filters |
| US20130105709A1 (en) * | 2010-06-04 | 2013-05-02 | Michael Himmelhaus | Optical Cavity Mode Excitations in Magnetic Fluorescent Microparticles |
| CN104250845A (en) * | 2013-06-27 | 2014-12-31 | 中国科学院化学研究所 | Construction method of low-dimensional organic frequency-doubling crystal |
| CN106159674A (en) * | 2016-07-08 | 2016-11-23 | 燕山大学 | A kind of preparation method of laser instrument |
| CN108039637A (en) * | 2017-12-21 | 2018-05-15 | 河北科技大学 | A kind of organic echo wall type（WGM）The preparation method of resonator |
| CN108732662A (en) * | 2017-04-20 | 2018-11-02 | 中国科学院化学研究所 | A kind of micro- disk of organic flexible/metal nanometer line hetero-junctions and preparation method thereof |
| CN109056074A (en) * | 2018-07-13 | 2018-12-21 | 苏州大学 | A kind of two dimension eutectic organic single-crystal micro-crystal, preparation method and applications |
| CN109777399A (en) * | 2019-03-15 | 2019-05-21 | 苏州大学 | The preparation method of organic microparticles as aggressive mode Echo Wall optical microcavity |
| CN110429469A (en) * | 2019-07-11 | 2019-11-08 | 燕山大学 | A kind of preparation method of the organic micro- disk resonant cavity of Whispering-gallery-mode |
-
2020
- 2020-06-12 CN CN202010538396.0A patent/CN111628394B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001061395A1 (en) * | 2000-02-17 | 2001-08-23 | Cquint Communications Corporation | Resonant optical filters |
| US20130105709A1 (en) * | 2010-06-04 | 2013-05-02 | Michael Himmelhaus | Optical Cavity Mode Excitations in Magnetic Fluorescent Microparticles |
| CN104250845A (en) * | 2013-06-27 | 2014-12-31 | 中国科学院化学研究所 | Construction method of low-dimensional organic frequency-doubling crystal |
| CN106159674A (en) * | 2016-07-08 | 2016-11-23 | 燕山大学 | A kind of preparation method of laser instrument |
| CN108732662A (en) * | 2017-04-20 | 2018-11-02 | 中国科学院化学研究所 | A kind of micro- disk of organic flexible/metal nanometer line hetero-junctions and preparation method thereof |
| CN108039637A (en) * | 2017-12-21 | 2018-05-15 | 河北科技大学 | A kind of organic echo wall type（WGM）The preparation method of resonator |
| CN109056074A (en) * | 2018-07-13 | 2018-12-21 | 苏州大学 | A kind of two dimension eutectic organic single-crystal micro-crystal, preparation method and applications |
| CN109777399A (en) * | 2019-03-15 | 2019-05-21 | 苏州大学 | The preparation method of organic microparticles as aggressive mode Echo Wall optical microcavity |
| CN110429469A (en) * | 2019-07-11 | 2019-11-08 | 燕山大学 | A kind of preparation method of the organic micro- disk resonant cavity of Whispering-gallery-mode |
Non-Patent Citations (3)
| Title |
|---|
| QING LIAO等: "Perovskite microdisk microlasers self-assembled from solution", 《ADVANCED MATERIALS》 * |
| 张琪 等: "有机激光材料及器件的研究现状与展望", 《物理学报》 * |
| 胡国星等: "基于光声效应的激光超声裂纹检测技术", 《中国科技信息》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112441871A (en) * | 2020-11-05 | 2021-03-05 | 河北科技大学 | Modification method and application of organic photoelectric material |
| CN112441871B (en) * | 2020-11-05 | 2022-12-09 | 河北科技大学 | Modification method and application of organic photoelectric material |
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