CN111628012A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN111628012A CN111628012A CN201910153686.0A CN201910153686A CN111628012A CN 111628012 A CN111628012 A CN 111628012A CN 201910153686 A CN201910153686 A CN 201910153686A CN 111628012 A CN111628012 A CN 111628012A
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- 238000002360 preparation method Methods 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000031700 light absorption Effects 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 10
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
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- 230000008020 evaporation Effects 0.000 description 1
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- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
- H01L31/188—Apparatus specially adapted for automatic interconnection of solar cells in a module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to a solar cell and a preparation method thereof, wherein the solar cell comprises a substrate, a back electrode layer, a light absorption layer, a buffer layer, a high-resistance layer, a first front electrode layer, a second front electrode layer and a grid line positioned between the first front electrode layer and the second front electrode layer which are sequentially stacked, a first scribing line, a second scribing line and a third scribing line are sequentially arranged in the solar cell, the first scribing line, the second scribing line and the third scribing line are all perpendicular to the grid line, the first scribing line is arranged from one surface, far away from the substrate, of the back electrode layer to one surface, close to the back electrode layer, of the substrate, the second scribing line is arranged from one surface, far away from the high-resistance layer, of the first front electrode layer to one surface, far away from the substrate, of the back electrode layer, and the third scribing line is arranged from one surface, far away from the grid line, of the second front electrode. The solar cell can reduce series resistance between the grid line and the back electrode layer and heat effect caused by stripping of the grid line.
Description
Technical Field
The invention relates to the technical field of batteries, in particular to a solar battery and a preparation method thereof.
Background
The CIGS solar cell has the advantages of strong light absorption capability, low manufacturing cost, flexibility, stable power generation, environmental friendliness and the like, and is one of the most possible materials to replace silicon cells in the future. In the CIGS cell manufacturing process, in order to form different sub-cells from the CIGS cell and achieve series-parallel connection between the sub-cells, at least three laser/mechanical scribing processes (named as first scribing, second scribing and third scribing according to the time sequence of scribing) are generally required. In order to effectively collect carriers generated by a CIGS solar cell, the carrier collection capability is mainly improved by plating a metal grid line on the surface of the solar cell.
However, the prior art has the following disadvantages: in the second scribing groove, the grid line and the back electrode are not in direct contact, the series resistance is large, and the grid line is easy to peel off when scribing is carried out for the third time, so that the heat effect is serious.
Disclosure of Invention
In order to overcome the problems of large series resistance and serious thermal effect between a grid line and a back electrode of a CIGS thin-film solar cell in the prior art, an embodiment of the invention provides a solar cell, which comprises a substrate, a back electrode layer, a light absorbing layer, a buffer layer, a high-resistance layer, a first front electrode layer, a second front electrode layer and a grid line positioned between the first front electrode layer and the second front electrode layer which are sequentially stacked, wherein a scribing line is arranged in the solar cell, the scribing line comprises a first scribing line, a second scribing line and a third scribing line which are sequentially arranged, the first scribing line, the second scribing line and the third scribing line are all vertically arranged with the grid line, the first scribing line is arranged from one surface of the back electrode layer, which is far away from the substrate, to one surface of the substrate, which is close to the back electrode layer, the second scribing line is arranged from one surface of the first front electrode layer, which is far away from the high-resistance layer, to one surface of the back electrode layer, which is far And the third scribing line is arranged from one surface, far away from the grid line, of the second front electrode layer to one surface, far away from the substrate, of the back electrode layer.
Optionally, the grid lines are arranged in parallel, and the distance between adjacent grid lines is 1mm-5 mm.
Optionally, the width of the gate line is 1 μm to 50 μm.
Optionally, the material of the grid line includes at least one of aluminum, nickel, silver, copper, gold and graphite-based conductive materials.
Optionally, the thickness of the first front electrode layer is 20nm to 100 nm.
Optionally, the thickness of the second front electrode layer is 100nm to 500 nm.
Optionally, the thickness of the high-resistance layer is 20nm-60 nm.
Optionally, the thickness of the back electrode layer is 300nm to 500nm, the thickness of the light absorption layer is 1 μm to 3 μm, and the thickness of the buffer layer is 20nm to 60 nm.
Optionally, the width of the first scribing line is 10 μm to 100 μm, the width of the second scribing line is 10 μm to 200 μm, and the width of the third scribing line is 10 μm to 200 μm.
The embodiment of the invention also provides a preparation method of the solar cell, which comprises the following steps:
forming a back electrode layer on one side of a substrate;
carrying out first scribing on the back electrode layer to form a first scribing line;
sequentially preparing a light absorption layer, a buffer layer, a high-resistance layer and a first front electrode layer on the back electrode layer;
carrying out second scribing on the first front electrode layer to form a second scribing line;
preparing a grid line and a second front electrode layer on the first front electrode layer in sequence;
and scribing for the third time on the second front electrode layer to form a third scribing line.
Compared with the prior art, the solar cell provided by the invention has the following advantages:
the cell structure can realize direct contact of the grid line and the back electrode on one hand, thereby greatly reducing the series resistance. On the other hand, the second front electrode layer covers the surface of the grid line, so that the adhesive force of the grid line can be increased, the grid line in the second scribing line is prevented from being stripped when the third scribing line is scribed, and the serious heat effect is avoided.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic diagram of a solar cell in the related art;
FIG. 2 is a schematic diagram of a solar cell according to an embodiment;
FIG. 3 illustrates an exemplary embodiment of a method for fabricating the solar cell shown in FIG. 2
Reference numerals: 100-substrate, 101-back electrode layer, 102-light absorbing layer, 103-buffer layer, 104-high resistance layer, 105-first front electrode layer, 106-grid line, 121-first scribing line, 122-second scribing line, 123-third scribing line, 200-substrate, 201-back electrode layer, 202-light absorbing layer, 203-buffer layer, 204-high resistance layer, 205-first front electrode layer, 206-grid line, 207-second front electrode layer, 221-first scribing line, 222-second scribing line, 223-third scribing line.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described more fully below.
Fig. 1 shows a schematic diagram of a solar cell in the related art. As can be seen from fig. 1, the solar cell includes a substrate 100, a back electrode layer 101, a light absorbing layer 102, a buffer layer 103, a high resistance layer 104, a first front electrode layer 105, and a gate line 106, which are sequentially stacked, and a scribe line is provided in the solar cell. The scribing line includes a first scribing line 121, a second scribing line 122, and a third scribing line 123 sequentially disposed, and the first scribing line 121, the second scribing line 122, and the third scribing line 123 are disposed perpendicular to the gate line 106.
The first scribe line 121 extends from the surface of the back electrode layer 101 away from the substrate 100 to the surface of the substrate 100 close to the back electrode layer 101. A second scribing line 122 is disposed in parallel beside the first scribing lines 121, the second scribing line 122 extends from a surface of the buffer layer 103 away from the light absorbing layer 102 to a surface of the back electrode layer 101 away from the substrate 100, and the third scribing line 123 extends from surfaces of the gate line 106 and the first front electrode layer 105 close to the gate line 106 to a surface of the back electrode layer 101 away from the substrate 100.
In the solar cell structure shown in fig. 1, a thick high resistance layer 104 and a first front electrode layer 105 are provided between the gate line 106 and the back electrode layer 101, and thus a large series resistance is provided. In addition, during the fabrication of the solar cell, the gate lines 106 at the second scribing line 122 or more are easily peeled off when the third scribing line 123 is scribed, thereby causing a severe thermal effect.
The solar cell structure in an embodiment of the invention is shown in fig. 2. As can be seen from fig. 2, the solar cell includes a substrate 200, a back electrode layer 201, a light absorbing layer 202, a buffer layer 203, a high resistance layer 204, a first front electrode layer 205, a gate line 206, and a second front electrode layer 207, which are sequentially stacked. The solar cell is internally provided with a scribing line. The scribing line includes a first scribing line 221, a second scribing line 222, and a third scribing line 223 arranged in this order, and the first scribing line 221, the second scribing line 222, and the third scribing line 223 are arranged perpendicular to the gate line 206.
The first scribing line 221 is opened from the surface of the back electrode layer 201 far away from the substrate 200 to the surface of the substrate 200 near the back electrode layer 201, the second scribing line 222 is opened from the surface of the first front electrode layer 205 far away from the high resistance layer 204 to the surface of the back electrode layer 201 far away from the substrate 200, and the third scribing line 223 is opened from the surface of the second front electrode layer 207 far away from the gate line 206 to the surface of the back electrode layer 201 far away from the substrate 200.
Specifically, the material of the substrate 200 is stainless steel, glass, or a flexible material. The material of the back electrode layer 201 may be molybdenum or tungsten, and optionally, the thickness of the back electrode layer 201 is 300nm to 500nm, for example, 400 nm. The material of the light absorbing layer 202 is copper indium gallium selenide or cadmium telluride, and optionally, the thickness of the light absorbing layer 202 is 1 μm to 3 μm, for example, 2 μm. The buffer layer 203 is made of cadmium sulfide or zinc sulfide, and optionally, the buffer layer 203 has a thickness of 20nm to 60nm, for example, 40 nm. The material of the high-resistance layer 204 is intrinsic zinc oxide or zinc magnesium oxide, and optionally, the thickness of the high-resistance layer 204 is 20nm to 60nm, for example, 40 nm. The material of the first front electrode layer 205 is aluminum-doped zinc oxide, boron-doped zinc oxide, or indium-doped tin oxide, and optionally, the thickness of the first front electrode layer 205 is 20nm to 100nm, for example, 60 nm. The material of the second front electrode layer 207 is aluminum-doped zinc oxide, boron-doped zinc oxide, or indium-doped tin oxide, and optionally, the thickness of the second front electrode layer 207 is 100nm to 500nm, for example, 200 nm.
The number of the gate lines 206 is multiple, and optionally, the multiple gate lines 206 are arranged in parallel, the gate lines 206 may be in a stripe structure, the distance between two adjacent gate lines 206 is 1mm to 5mm, for example, 3mm, the width of the gate line 206 is 1 μm to 50 μm, for example, 20 μm, and the thickness is 0.1 μm to 5 μm (the thickness of the gate line 206 as shown in the battery structure of fig. 2), for example, 2 μm.
The material of the gate line 206 includes at least one of aluminum, nickel, silver, copper, gold, and graphite-based conductive material.
The scribing lines are in multiple groups, each group of scribing lines comprises a first scribing line 221, a second scribing line 222 and a third scribing line 223 which are sequentially arranged, and the multiple groups of scribing lines are arranged at intervals, namely the second scribing line 222 is arranged between the first scribing line 221 and the third scribing line 223, a certain distance is arranged between the first scribing line 221 and the second scribing line 222, and a certain distance is arranged between the second scribing line 222 and the third scribing line 223.
The plurality of first scribe lines 221 penetrate through the divided back electrode layer 201, and the plurality of first scribe lines 221 are parallel to and covered with the light absorbing layer 202 to divide the solar cell into a plurality of cell units insulated from each other. Alternatively, the width of the first scribing line 221 is 10 μm to 100 μm, for example, 50 μm.
A second scribing line 222 is formed beside the first scribing line 221 in parallel to form a connecting channel between the back electrode layer 201 and the front electrode in the adjacent cell. The second scribe line 222 is opened from the side of the first front electrode layer 205 away from the high resistance layer 204 to the side of the back electrode layer 201 away from the substrate 200. Since the plurality of gate lines 206 do not form a plane, the gate lines 206 cover only a portion of the area of the second scribing line 222 and the first front electrode layer 205, and the battery structure shown in fig. 2 is a cross-sectional view of a battery having a portion covered by the gate lines 206. The other part of the second scribing line 222 not covered by the gate line 206 is covered by the second front electrode layer 207, and the other part of the surface of the first front electrode layer 205 not covered by the gate line 206 is covered by the second front electrode layer 207. The second scribing line 222 is spaced from the edge of the first scribing line 221 by more than 0, and optionally, the width of the second scribing line 222 is 10 μm to 200 μm, for example, 100 μm.
A third scribe line 223 is formed in parallel beside the second scribe line 222 (on the side away from the first scribe line 221), and the third scribe line 223 penetrates through the light absorbing layer 202, the buffer layer 203, the high resistance layer 204, the first front electrode layer 205, the gate line 206, and the second front electrode layer 207. The third scribing line 223 separates the front electrode layers of the adjacent battery cells, thereby achieving the division of the adjacent battery cells. The third scribe line 223 is spaced from the edge of the second scribe line 222 by more than 0, and optionally the third scribe line has a width of 10 μm to 200 μm, for example 100 μm.
An embodiment of the present invention further provides a method for manufacturing the solar cell shown in fig. 2, and as shown in fig. 3, the method includes:
step 301: a back electrode layer is formed on one side of the substrate.
Specifically, the material of the substrate is stainless steel, glass or a flexible material. A back electrode layer with a thickness of 300nm-500nm, such as a molybdenum back electrode layer or a tungsten back electrode layer, can be plated on one side of the substrate by a magnetron sputtering method.
Step 302: and carrying out first scribing on the back electrode layer to form a first scribing line.
Specifically, a plurality of first scribing lines are scribed on the back electrode layer by a laser scribing method or a mechanical scribing method, so that the first scribing lines penetrate through the back electrode layer. The plurality of first scribing lines are arranged in parallel, the distance between two adjacent first scribing lines is 10mm-100mm, and the width of each first scribing line is 10 μm-100 μm.
Specifically, the light absorbing layer is made of copper indium gallium selenide or cadmium telluride, the light absorbing layer is prepared on the first back electrode layer and in the first scribing line through a co-evaporation method or a sputtering method, and the thickness of the light absorbing layer is 1-3 μm.
The buffer layer is prepared by a chemical water bath method, specifically, the buffer layer is cadmium sulfide or zinc sulfide, and the thickness of the buffer layer is 20nm-60 nm.
And preparing a high-resistance layer on the buffer layer by a magnetron sputtering method, wherein the high-resistance layer is intrinsic zinc oxide or zinc magnesium oxide, and the thickness of the high-resistance layer is 20nm-60 nm.
And preparing a first front electrode layer on the high-resistance layer by a magnetron sputtering method, wherein the first front electrode layer is specifically aluminum-doped zinc oxide, boron-doped zinc oxide or indium-doped tin oxide, and the thickness of the first front electrode layer is 20nm-100 nm.
Step 304: and scribing for the second time on the first front electrode layer to form a second scribing line.
And scribing a plurality of second scribing lines (one first scribing line corresponds to one second scribing line) beside each first scribing line in parallel by a laser scribing method or a mechanical scribing method, so that the second scribing lines are used for forming one surface of the back electrode layer, which is far away from the substrate, from one surface of the first front electrode layer, which is far away from the high-resistance layer. Specifically, the edge distance between the second scribing line and the first scribing line is more than 0, and the width of the second scribing line is 50 μm-100 μm.
Step 305: and sequentially preparing a grid line and a second front electrode layer on the first front electrode layer.
The grid line is prepared by utilizing a mask through an evaporation coating method, and specifically, the material of the grid line comprises at least one of aluminum, nickel, silver, copper, gold and graphite conductive materials. The number of the grid lines is multiple, the grid lines are parallel to each other, the distance between two adjacent grid lines is 1mm-5mm, the width of each grid line is 1 μm-50 μm, and the thickness of each grid line is 0.1 μm-5 μm.
And preparing a second front electrode layer on the surfaces of the second scribing line and the grid line by a magnetron sputtering method, so that the grid line forms a structure wrapped by the first front electrode layer and the second front electrode layer. Specifically, the second front electrode layer is aluminum-doped zinc oxide, boron-doped zinc oxide or indium-doped tin oxide, and the thickness of the second front electrode layer is 20nm-100 nm.
Step 306: and scribing for the third time on the second front electrode layer to form a third scribing line.
And scribing a plurality of third scribing lines (one second scribing line corresponds to one third scribing line) beside each second scribing line (far away from one side of the first scribing line) in parallel by a laser scribing method or a mechanical scribing method, wherein the third scribing lines are opened from one surface, far away from the grid line, of the second front electrode layer to one surface, far away from the substrate, of the back electrode layer. Specifically, the edge distance between the third scribing line and the second scribing line is more than 0, and the width of the third scribing line is 50-100 μm.
Compared with the prior art, the solar cell provided by the invention has the following advantages:
in the prior art, a thick high-resistance layer and a thick front electrode layer are arranged between a grid line and a back electrode, so that the series resistance of a battery is large, and in addition, when the third scribing is carried out, namely the third scribing line is prepared, the grid line is exposed on the surface of the front electrode layer, so the grid line is easily stripped, and the serious heat effect is caused. According to the solar cell and the preparation method provided by the invention, the second scribing line is scribed after the high-resistance layer and the first front electrode layer are formed by changing the scribing sequence of the second scribing line, then the grid line is prepared on the surfaces of the first front electrode layer and the second scribing line, and the second front electrode layer is further prepared on the surfaces of the first front electrode layer, the second scribing line and the grid line. The cell structure can realize direct contact of the grid line and the back electrode in the second scribing line, thereby greatly reducing the series resistance. On the other hand, the second front electrode layer covers the surface of the grid line, so that the grid line is fixed, the adhesive force of the grid line is increased, the grid line in the second scribing line is prevented from being stripped when the third scribing line is scribed, and the serious heat effect is avoided.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A solar cell includes a substrate, a back electrode layer, a light absorbing layer, a buffer layer, a high resistance layer, a first front electrode layer, a second front electrode layer, and a gate line between the first front electrode layer and the second front electrode layer, a scribing line is arranged in the solar cell and comprises a first scribing line, a second scribing line and a third scribing line which are arranged in sequence, the first scribing line, the second scribing line and the third scribing line are all perpendicular to the grid line, the first scribing line is arranged from one surface, far away from the substrate, of the back electrode layer to one surface, close to the back electrode layer, of the substrate, the second scribing line is arranged from one surface of the first front electrode layer far away from the high-resistance layer to one surface of the back electrode layer far away from the substrate, the third scribing line is arranged from one surface, far away from the grid line, of the second front electrode layer to one surface, far away from the substrate, of the back electrode layer.
2. The solar cell of claim 1, wherein the number of the grid lines is multiple, the multiple grid lines are arranged in parallel, and the distance between two adjacent grid lines is 1mm-5 mm.
3. The solar cell of claim 1, wherein the width of the grid lines is 1 μm to 50 μm and the thickness of the grid lines is 0.1 μm to 5 μm.
4. The solar cell of claim 1, wherein the material of the grid line comprises at least one of aluminum, nickel, silver, copper, gold, and a graphite-based conductive material.
5. The solar cell according to claim 1, wherein the thickness of the first front electrode layer is 20nm to 100 nm.
6. The solar cell according to claim 1, wherein the thickness of the second front electrode layer is 100nm to 500 nm.
7. The solar cell according to claim 1, wherein the thickness of the high-resistance layer is 20nm to 60 nm.
8. The solar cell according to claim 1, wherein the back electrode layer has a thickness of 300nm to 500nm, the light absorbing layer has a thickness of 1 μm to 3 μm, and the buffer layer has a thickness of 20nm to 60 nm.
9. The solar cell according to claim 1, wherein the scribing lines are a plurality of groups, the scribing lines are arranged at intervals, the width of the first scribing line is 10 μm to 100 μm, the width of the second scribing line is 10 μm to 200 μm, and the width of the third scribing line is 10 μm to 200 μm.
10. A method of preparing the solar cell of any one of claims 1-9, comprising:
forming a back electrode layer on one side of a substrate;
carrying out first scribing on the back electrode layer to form a first scribing line;
sequentially preparing a light absorption layer, a buffer layer, a high-resistance layer and a first front electrode layer on the back electrode layer;
carrying out second scribing on the first front electrode layer to form a second scribing line;
preparing a grid line and a second front electrode layer on the first front electrode layer in sequence;
and scribing for the third time on the second front electrode layer to form a third scribing line.
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