CN111620341A - Surface treatment process method for silicon carbide powder - Google Patents
Surface treatment process method for silicon carbide powder Download PDFInfo
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- CN111620341A CN111620341A CN202010430782.8A CN202010430782A CN111620341A CN 111620341 A CN111620341 A CN 111620341A CN 202010430782 A CN202010430782 A CN 202010430782A CN 111620341 A CN111620341 A CN 111620341A
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- silicon carbide
- carbide powder
- surface treatment
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62645—Thermal treatment of powders or mixtures thereof other than sintering
- C04B35/62655—Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
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- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
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- Structural Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention discloses a surface treatment process method of silicon carbide powder, relating to the technical field of surface treatment of silicon carbide powder, and the preparation of S1 raw materials for surface treatment of the silicon carbide powder; s2, impurity removal reaction; s3, washing and double drying; s4, neutralization reaction; s5, separation treatment; s6, washing the silicon carbide powder; and S7, drying the silicon carbide powder. The process method is afraid of adopting 304 stainless steel materials for the container, adopts multiple times of drying treatment in the treatment process of the silicon carbide powder by acid and alkali resistance, can select a settling chamber with proper height according to the requirement of the silicon carbide powder, then repeatedly cleans the silicon carbide powder after settling in a flowing water source to obtain the silicon carbide powder with less impurities, and can obtain a final product by multiple times of filtering and drying.
Description
Technical Field
The invention relates to the technical field of silicon carbide powder surfaces, in particular to a silicon carbide powder surface treatment process method.
Background
Carborundum, also known as silicon carbide (SiC), is produced by high-temperature smelting quartz sand, petroleum coke (or coal coke), wood dust (salt is required for producing green silicon carbide) and other raw materials in a resistance furnace. Silicon carbide also has rare minerals in nature, morusite, which is also known as carbo-silica. In the modern C, N, B and other non-oxide high-technology refractory raw materials, silicon carbide is the most widely and economically used one, and can be called as corundum or refractory sand, and a silicon carbide powder surface treatment process can be generated in the processing and using process of silicon carbide, so that convenience is provided for the subsequent use of silicon carbide powder.
The existing silicon carbide powder surface treatment process has the defects of high internal impurity content, poor quality, complex operation, easiness in clotting in the silicon carbide powder treatment process, low drying efficiency, inconvenience for a user to use and inconvenience for sedimentation treatment of the silicon carbide powder in the use process, and therefore, the silicon carbide powder surface treatment process is provided.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a silicon carbide powder surface treatment process method, which solves the problems that the existing silicon carbide powder surface treatment process proposed in the background art has more impurities in the use process, poor quality, complex operation, easy clotting in the treatment process of silicon carbide powder, low drying efficiency, inconvenience for users and inconvenience for sedimentation treatment of silicon carbide powder in the use process.
In order to achieve the purpose, the invention is realized by the following technical scheme: a surface treatment process method of silicon carbide powder comprises the following steps:
s1, preparing a raw material for surface treatment of silicon carbide powder;
s2, impurity removal reaction;
s3, washing and double drying;
s4, neutralization reaction;
s5, separation treatment;
s6, washing the silicon carbide powder;
and S7, drying the silicon carbide powder.
Optionally, the silicon carbide powder surface treatment process method includes the following specific steps:
s1 preparation of raw material for surface treatment of silicon carbide powder
Preparing silicon carbide powder and an acid solution according to the volume ratio of 6: 4;
s2, impurity removal reaction
After the preparation is finished, adding the prepared raw materials into an impurity removal reaction kettle, and removing impurities in the silicon carbide powder and the acidic solution;
s3, washing and double drying
After the impurity removal is finished, washing the separated silicon carbide powder to be neutral by using a weak base solution, then washing by using deionized water for drying, standing after the primary drying is finished, and then carrying out drying treatment again;
s4, neutralization reaction
Then the obtained product is reacted with a surface treating agent consisting of organic silicon, organic fluorine, water and the like in a surface treatment reaction kettle according to the proportion of 2: 2;
s5 separation treatment
The obtained silicon carbide powder is subjected to repeated sedimentation treatment, and the silicon carbide powder can be separated;
s6, cleaning silicon carbide powder
Cleaning the obtained silicon carbide powder after the settlement is finished, and repeating for 1-3 times;
s7, drying the silicon carbide powder
And filtering the cleaned silicon carbide powder, and placing the silicon carbide powder in a dryer for drying.
Optionally, the raw materials in S1 are prepared in a stainless steel container.
Optionally, the number of the reaction kettles is two.
Optionally, the drying cavity in S3 is provided with two sets, and two sets are installed in each set, and the inside mesh apertures of each layer of drying layer in the drying cavity are different.
Optionally, the proportioning of the S4 processor is performed outside the reaction kettle, and the reaction kettle is vertically placed on a horizontal plane.
Optionally, the settling chamber in S5 has a trapezoidal structure, and there are three settling chambers, and the heights of the settling chambers are not on the same horizontal line.
Optionally, the S6 is washed in a flowing water.
Optionally, the drying filter layers in S7 are all distributed equidistantly.
The invention provides a silicon carbide powder surface treatment process method, which has the following beneficial effects: according to the silicon carbide powder surface treatment process, the ferric oxide in the reaction kettle can be effectively removed through the preparation proportion of the volumes of the silicon carbide powder and the acidic solution, the impurity removal efficiency is good, then the obtained silicon carbide powder is washed to be neutral by the weak alkaline solution, and a pH test paper is used for carrying out discontinuous test in the washing process, so that the over-alkali caused by peracid is avoided, and convenience is provided for the subsequent silicon carbide powder surface treatment;
the process method is afraid of adopting 304 stainless steel materials for the container, adopts multiple times of drying treatment in the treatment process of the silicon carbide powder by acid and alkali resistance, can select a settling chamber with proper height according to the requirement of the silicon carbide powder, then repeatedly cleans the silicon carbide powder after settling in a flowing water source to obtain the silicon carbide powder with less impurities, and can obtain a final product by multiple times of filtering and drying.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to specific embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
A surface treatment process method of silicon carbide powder comprises the following steps:
s1, preparing a raw material for surface treatment of silicon carbide powder;
s2, impurity removal reaction;
s3, washing and double drying;
s4, neutralization reaction;
s5, separation treatment;
s6, washing the silicon carbide powder;
s7, drying the silicon carbide powder
The silicon carbide powder surface treatment process comprises the following specific steps:
s1 preparation of raw material for surface treatment of silicon carbide powder
Preparing the raw material in the S1 in a stainless steel container, and preparing silicon carbide powder and an acid solution according to the volume ratio of 6: 4;
s2, impurity removal reaction
After the preparation is finished, the prepared raw materials are added into an impurity removal reaction kettle, so that impurities in the silicon carbide powder and the acid solution can be removed;
s3, washing and double drying
The drying chambers in the S3 are provided with two groups, each group is provided with two drying chambers, the inside mesh openings of each layer of drying layer in the drying chambers are different in caliber, after the impurities are removed, the separated silicon carbide powder is washed to be neutral by weak base solution, then washed by deionized water for drying, and then is kept stand after primary drying is finished, and then is dried again;
s4, neutralization reaction
The proportioning of the S4 processor is carried out outside a reaction kettle, the reaction kettle is vertically placed on a horizontal plane, and then the reaction kettle reacts with a surface treatment agent consisting of organic silicon, organic fluorine, water and the like according to the proportion of 2:2 in the surface treatment reaction kettle;
s5 separation treatment
The settling chambers in the S5 are of a trapezoidal structure, the number of the settling chambers is three, the heights of the settling chambers are not on the same horizontal line, the obtained silicon carbide powder is subjected to repeated settling treatment, and the silicon carbide powder can be separated;
s6, cleaning silicon carbide powder
Cleaning the S6 in flowing water, cleaning the obtained silicon carbide powder after the settlement is finished, and repeating the cleaning for 1-3 times;
s7, drying the silicon carbide powder
And the S7 are distributed at equal intervals, and the cleaned silicon carbide powder is filtered and placed in a dryer for drying treatment.
In summary, the surface treatment process for silicon carbide powder comprises the following steps:
s1 preparation of raw material for surface treatment of silicon carbide powder
Preparing silicon carbide powder and an acid solution according to the volume ratio of 6: 4;
s2, impurity removal reaction
After the preparation is finished, adding the prepared raw materials into an impurity removal reaction kettle, and removing impurities (namely ferric oxide) in the silicon carbide powder and the acidic solution to obtain purer silicon carbide powder;
s3, washing and double drying
After the impurity removal is finished, washing the separated silicon carbide powder to be neutral by using a weak base solution, then washing by using deionized water for drying, standing after the primary drying is finished, and then carrying out drying treatment again;
s4, neutralization reaction
Then the obtained product is reacted with a surface treating agent consisting of organic silicon, organic fluorine, water and the like in a surface treatment reaction kettle according to the proportion of 2: 2;
s5 separation treatment
A settling chamber with proper height can be selected according to the requirement of the silicon carbide powder, so that the obtained silicon carbide powder is subjected to repeated settling treatment, and the silicon carbide powder can be separated;
s6, cleaning silicon carbide powder
Cleaning the obtained silicon carbide powder after the settlement is finished, and repeating for 1-3 times;
s7, drying the silicon carbide powder
And filtering the cleaned silicon carbide powder, placing the silicon carbide powder in a dryer, and drying to obtain a final product after the process is finished.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (9)
1. The surface treatment process method of the silicon carbide powder is characterized by comprising the following steps:
s1, preparing a raw material for surface treatment of silicon carbide powder;
s2, impurity removal reaction;
s3, washing and double drying;
s4, neutralization reaction;
s5, separation treatment;
s6, washing the silicon carbide powder;
and S7, drying the silicon carbide powder.
2. The silicon carbide powder surface treatment process according to claim 1, wherein the silicon carbide powder surface treatment process comprises the following steps:
s1 preparation of raw material for surface treatment of silicon carbide powder
Preparing silicon carbide powder and an acid solution according to the volume ratio of 6: 4;
s2, impurity removal reaction
After the preparation is finished, adding the prepared raw materials into an impurity removal reaction kettle, and removing impurities in the silicon carbide powder and the acidic solution;
s3, washing and double drying
After the impurity removal is finished, washing the separated silicon carbide powder to be neutral by using a weak base solution, then washing by using deionized water for drying, standing after the primary drying is finished, and then carrying out drying treatment again;
s4, neutralization reaction
Then the obtained product is reacted with a surface treating agent consisting of organic silicon, organic fluorine, water and the like in a surface treatment reaction kettle according to the proportion of 2: 2;
s5 separation treatment
The obtained silicon carbide powder is subjected to repeated sedimentation treatment, and the silicon carbide powder can be separated;
s6, cleaning silicon carbide powder
Cleaning the obtained silicon carbide powder after the settlement is finished, and repeating for 1-3 times;
s7, drying the silicon carbide powder
And filtering the cleaned silicon carbide powder, and placing the silicon carbide powder in a dryer for drying.
3. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the feedstock in S1 was prepared in a stainless steel vessel.
4. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the reaction kettle is provided with two reaction kettles.
5. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the drying chamber in S3 is provided with two sets, and two are installed to every group to the mesh bore differs in every layer of drying layer in the drying chamber.
6. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the proportioning of the S4 processor is carried out outside the reaction kettle, and the reaction kettle is vertically placed on a horizontal plane.
7. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the settling chambers in the S5 are in a trapezoidal structure, the number of the settling chambers is three, and the heights of the settling chambers are not on the same horizontal line.
8. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the S6 is washed in a running water.
9. The surface treatment process method for silicon carbide powder according to claim 2, characterized in that: the drying and filtering layers in the S7 are distributed at equal intervals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010430782.8A CN111620341A (en) | 2020-05-20 | 2020-05-20 | Surface treatment process method for silicon carbide powder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010430782.8A CN111620341A (en) | 2020-05-20 | 2020-05-20 | Surface treatment process method for silicon carbide powder |
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| CN111620341A true CN111620341A (en) | 2020-09-04 |
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| CN202010430782.8A Withdrawn CN111620341A (en) | 2020-05-20 | 2020-05-20 | Surface treatment process method for silicon carbide powder |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102567936B1 (en) * | 2022-08-22 | 2023-08-17 | 주식회사 쎄닉 | silicon carbide powder, method for manufacturing the same and method for manufacturing silicon carbide ingot using the same |
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2020
- 2020-05-20 CN CN202010430782.8A patent/CN111620341A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102567936B1 (en) * | 2022-08-22 | 2023-08-17 | 주식회사 쎄닉 | silicon carbide powder, method for manufacturing the same and method for manufacturing silicon carbide ingot using the same |
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Application publication date: 20200904 |
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