CN111613966A - Vertical cavity surface emitting laser with controllable laser phase distribution and manufacturing method thereof - Google Patents
Vertical cavity surface emitting laser with controllable laser phase distribution and manufacturing method thereof Download PDFInfo
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- CN111613966A CN111613966A CN202010574430.XA CN202010574430A CN111613966A CN 111613966 A CN111613966 A CN 111613966A CN 202010574430 A CN202010574430 A CN 202010574430A CN 111613966 A CN111613966 A CN 111613966A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18302—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] comprising an integrated optical modulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
Abstract
The application discloses a vertical cavity surface emitting laser with controllable laser phase distribution, which comprises a phase modulation layer, a first electrode, a substrate, a first Bragg reflector layer, a light emitting layer, a current limiting layer with a current limiting hole, a second Bragg reflector layer and a second electrode, wherein the first electrode, the substrate, the first Bragg reflector layer, the light emitting layer, the current limiting layer, the second Bragg reflector layer and the second electrode are sequentially stacked from bottom to top; the phase modulation layer is positioned in the second Bragg reflector layer or on the upper surface of the second Bragg reflector layer and corresponds to the current limiting hole, and the material of the phase modulation layer is different from that of the second Bragg reflector layer. The vertical cavity surface emitting laser comprises a step-shaped phase modulation layer, and each step height is unequal, so that when the laser is internally optically oscillated, the phase distribution is different when the laser passes through the positions of different step heights of the phase modulation layer, and the phase of output laser can be controlled by changing the thickness of the phase modulation layer. The application also provides a manufacturing method with the advantages.
Description
Technical Field
The application relates to the technical field of semiconductor lasers, in particular to a vertical cavity surface emitting laser with controllable laser phase distribution and a manufacturing method thereof.
Background
The vertical cavity surface emitting laser has the advantages of small volume, low cost, circular output light spot and simple collimation, and has attracted wide attention in recent years in the aspects of laser radar, 3D sensing, gesture recognition and the like. The vertical cavity surface emitting laser can be divided into two forms of a unit device and a laser array, the laser array forms an array structure by hundreds or even thousands of laser units, but the optical phase among laser beams is not fixed, and the output laser beams do not have coherence, so that the spatial coherent detection cannot be realized.
Therefore, how to provide a laser capable of controlling the phase of the output laser is a technical problem to be solved by those skilled in the art.
Disclosure of Invention
The present application provides a vertical cavity surface emitting laser with controllable laser phase distribution and a method for manufacturing the same, so that the vertical cavity surface emitting laser emits laser with controllable phase.
In order to solve the above technical problem, the present application provides a vertical cavity surface emitting laser with controllable laser phase distribution, including:
the phase modulation layer is in a step shape, and the height of each step is different;
the phase modulation layer is located inside or on the upper surface of the second Bragg reflector layer and corresponds to the current limiting hole, and the material of the phase modulation layer is different from that of the second Bragg reflector layer.
Optionally, the phase modulation layer is left-right symmetrical in a step shape or in a single-side step shape.
Optionally, the phase modulation layer is made of any one of the following materials:
gallium arsenide, gallium nitride, indium phosphide, silicon dioxide, silicon carbide, silicon nitride.
Optionally, the substrate is any one of a gallium arsenide substrate, an indium phosphide substrate, and a gallium nitride substrate.
Optionally, the material of the first electrode and the second electrode is any one or any combination of the following:
gold, aluminum, nickel, platinum, chromium, titanium, germanium.
The application also provides a method for manufacturing the vertical cavity surface emitting laser with controllable laser phase distribution, which comprises the following steps:
obtaining a laser phase distribution controllable vertical cavity surface emitting laser precursor, wherein the laser phase distribution controllable vertical cavity surface emitting laser precursor comprises a substrate, a first Bragg reflector layer, a light emitting layer and a current limiting layer which are sequentially stacked from bottom to top, or the substrate, the first Bragg reflector layer, the light emitting layer, the current limiting layer and a second Bragg reflector layer which are sequentially stacked from bottom to top;
forming a phase modulation layer to be processed on the upper surface of the laser phase distribution controllable vertical cavity surface emitting laser precursor, and etching the phase modulation layer to be processed by utilizing a photoetching technology to obtain a step-shaped phase modulation layer, wherein the height of each step is different; the material of the phase modulation layer is different from that of the second Bragg reflector layer;
forming a current confining hole in the current confining layer, the current confining hole corresponding to the phase modulation layer;
forming a second electrode on an upper surface of the second bragg mirror layer;
forming a first electrode on the lower surface of the substrate;
correspondingly, when the vertical cavity surface emitting laser precursor with controllable laser phase distribution includes the substrate, the first bragg reflector layer, the light emitting layer, and the current confinement layer, which are sequentially stacked from bottom to top, before the second electrode is formed on the upper surface of the second bragg reflector layer, the method further includes:
and forming the second Bragg reflector layer on the upper surface of the current limiting layer.
Optionally, the forming a first electrode on the lower surface of the substrate includes:
and forming the first electrode on the lower surface of the substrate by using a magnetron sputtering method.
Optionally, forming a second electrode on the upper surface of the second bragg mirror layer includes:
and forming the second electrode on the upper surface of the second Bragg reflector layer by using a magnetron sputtering method.
The vertical cavity surface emitting laser with controllable laser phase distribution comprises a phase modulation layer, and a first electrode, a substrate, a first Bragg reflector layer, a light emitting layer, a current limiting layer with a current limiting hole, a second Bragg reflector layer and a second electrode which are sequentially stacked from bottom to top, wherein the phase modulation layer is in a step shape, and the height of each step is different; the phase modulation layer is located inside or on the upper surface of the second Bragg reflector layer and corresponds to the current limiting hole, and the material of the phase modulation layer is different from that of the second Bragg reflector layer.
It is thus clear that the laser phase distribution controllable vertical cavity surface emitting laser in this application includes first electrode, the substrate, first bragg reflector layer, the luminescent layer, the current confinement layer, second bragg reflector layer, the second electrode, still include the phase modulation layer that is located the inside or the upper surface of second bragg reflector layer and corresponds with the current confinement hole, the phase modulation layer is the inequality echelonment of every ladder height, thereby when making the optical oscillation of the controllable vertical cavity surface emitting laser of laser phase distribution, the phase distribution is different when passing through the position of the different ladder heights of phase modulation layer, consequently can obtain different laser phase distributions through the thickness that changes the phase modulation layer, in order to realize that the phase of output laser is controllable.
In addition, the application also provides a manufacturing method of the vertical cavity surface emitting laser with the controllable laser phase distribution, which has the advantages.
Drawings
For a clearer explanation of the embodiments or technical solutions of the prior art of the present application, the drawings needed for the description of the embodiments or prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser with controllable laser phase distribution according to an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of another VCSEL with controllable laser phase distribution provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a phase modulation layer according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a phase distribution of laser light emitted from a VCSEL with controllable laser phase distribution;
FIG. 5 is a schematic view of another phase distribution of laser light emitted from a VCSEL with controllable laser phase distribution;
fig. 6 is a flowchart of a method for manufacturing a vertical cavity surface emitting laser with controllable laser phase distribution according to an embodiment of the present disclosure.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the following detailed description will be given with reference to the accompanying drawings. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those specifically described and will be readily apparent to those of ordinary skill in the art without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.
As described in the background section, the optical phases of the laser beams output by the conventional vertical cavity surface emitting lasers are not fixed, and the output laser beams do not have coherence, so that spatial coherent detection cannot be realized.
In view of this, the present application provides a vertical cavity surface emitting laser with controllable laser phase distribution, please refer to fig. 1 and fig. 2, in which fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser with controllable laser phase distribution provided in an embodiment of the present application, fig. 2 is a schematic structural diagram of another vertical cavity surface emitting laser with controllable laser phase distribution provided in an embodiment of the present application, and the vertical cavity surface emitting laser with controllable laser phase distribution includes:
the phase modulation layer 8, a first electrode 1, a substrate 9, a first Bragg reflector layer 2, a light emitting layer 3, a current limiting layer 4 with a current limiting hole 7, a second Bragg reflector layer 5 and a second electrode 6 which are sequentially stacked from bottom to top, wherein the phase modulation layer 8 is in a step shape, and the heights of the steps are different;
the phase modulation layer 8 is located inside or on the upper surface of the second bragg mirror layer 5, and corresponds to the current confinement hole 7, and the material of the phase modulation layer 8 is different from that of the second bragg mirror layer 5.
The number of steps of the phase modulation layer 8 is two or more.
The shape of the phase modulation layer 8 is not particularly limited in the present application, and for example, the phase modulation layer 8 has a step shape symmetrical to the left and right or a step shape with one side. When the phase modulation layer 8 is in a single-side step shape, please refer to the structural diagram of the phase modulation layer 8 shown in fig. 3, the heights of the steps are different, i.e., H1, H2, H3, and H4 are different from each other. When the phase modulation layer 8 is left-right symmetrical stepped, the phase distribution of the laser emitted from the vertical cavity surface emitting laser with controllable laser phase distribution tends to be high at the center and low at the edge, as shown in fig. 4. When the phase modulation layer 8 is in a single-sided step shape, the phase distribution of laser light emitted from the vertical cavity surface emitting laser whose laser phase distribution is controllable exhibits a monotone attenuation tendency, as shown in fig. 5.
It should be noted that the material of the phase modulation layer 8 in the present application includes, but is not limited to, any of the following:
gallium arsenide, gallium nitride, indium phosphide, silicon dioxide, silicon carbide, silicon nitride.
In this embodiment, the substrate 9 may be any one of semiconductor substrates such as a gallium arsenide substrate, an indium phosphide substrate, and a gallium nitride substrate. The first bragg mirror layer 2 and the second bragg mirror layer 5 may be gallium arsenide and aluminum gallium arsenide which are alternately stacked. The material of the first electrode 1 and the second electrode 6 includes, but is not limited to, any one or any combination alloy of gold, aluminum, nickel, platinum, chromium, titanium, germanium.
The controllable vertical cavity surface emitting laser of laser phase distribution in this application is except including first electrode 1, substrate 9, first bragg reflector layer 2, luminescent layer 3, current confinement layer 4, second bragg reflector layer 5, second electrode 6, still including being located the inside or the upper surface of second bragg reflector layer 5 and the phase modulation layer 8 corresponding with current confinement hole 7, phase modulation layer 8 is the inequality echelonment of every ladder height, thereby when making the controllable vertical cavity surface emitting laser of laser phase distribution, when the position of the different ladder heights of phase modulation layer 8, the phase distribution is different, consequently can obtain different laser phase distributions through the thickness that changes phase modulation layer 8, in order to realize that the phase of output laser is controllable.
The present application further provides a method for manufacturing a vertical cavity surface emitting laser with controllable laser phase distribution, please refer to fig. 6, the method includes:
step S101: and obtaining a laser phase distribution controllable vertical cavity surface emitting laser precursor, wherein the laser phase distribution controllable vertical cavity surface emitting laser precursor comprises a substrate, a first Bragg reflector layer, a light emitting layer and a current limiting layer which are sequentially stacked from bottom to top, or the substrate, the first Bragg reflector layer, the light emitting layer, the current limiting layer and a second Bragg reflector layer which are sequentially stacked from bottom to top.
The substrate may be any of semiconductor substrates such as a gallium arsenide substrate, an indium phosphide substrate, and a gallium nitride substrate.
Step S102: forming a phase modulation layer to be processed on the upper surface of the laser phase distribution controllable vertical cavity surface emitting laser precursor, and etching the phase modulation layer to be processed by utilizing a photoetching technology to obtain a step-shaped phase modulation layer, wherein the height of each step is different; the material of the phase modulation layer is different from the material of the second bragg mirror layer.
Specifically, the phase modulation layer to be processed is processed by adopting a mask and step-by-step etching, so that the stepped phase modulation layer is obtained.
The material of the phase modulation layer includes, but is not limited to, any one of gallium arsenide, gallium nitride, indium phosphide, silicon dioxide, silicon carbide, and silicon nitride.
Optionally, when the phase modulation layer is made of a semiconductor material such as gallium arsenide, gallium nitride, indium phosphide, or the like, the phase modulation layer to be processed may be formed by chemical vapor deposition or molecular beam epitaxy.
Optionally, when the material of the phase modulation layer is a dielectric material such as silicon dioxide, silicon carbide, silicon nitride, or the like, the phase modulation layer to be processed may be formed by a sputtering method or an evaporation method.
Step S103: a current confining hole is formed in the current confining layer, and the current confining hole corresponds to the phase modulation layer.
Step S104: and forming a second electrode on the upper surface of the second Bragg reflector layer.
Optionally, forming a second electrode on the upper surface of the second bragg mirror layer includes:
and forming the second electrode on the upper surface of the second Bragg reflector layer by using a magnetron sputtering method.
Step S105: and forming a first electrode on the lower surface of the substrate.
Optionally, the forming a first electrode on the lower surface of the substrate includes:
and forming the first electrode on the lower surface of the substrate by using a magnetron sputtering method.
Correspondingly, when the vertical cavity surface emitting laser precursor with controllable laser phase distribution includes the substrate, the first bragg reflector layer, the light emitting layer, and the current confinement layer, which are sequentially stacked from bottom to top, before the second electrode is formed on the upper surface of the second bragg reflector layer, the method further includes:
step S106: and forming the second Bragg reflector layer on the upper surface of the current limiting layer.
The vertical cavity surface emitting laser with the controllable laser phase distribution manufactured by the manufacturing method of the vertical cavity surface emitting laser with the controllable laser phase distribution comprises a first electrode, a substrate, a first Bragg reflector layer, a light emitting layer, a current limiting layer, a second Bragg reflector layer and a second electrode, and further comprises a phase modulation layer which is located inside or on the upper surface of the second Bragg reflector layer and corresponds to a current limiting hole, wherein the phase modulation layer is in a step shape with different step heights, so that when the optical oscillation inside the vertical cavity surface emitting laser with the controllable laser phase distribution passes through the positions with different step heights of the phase modulation layer, the phase distribution is different, different laser phase distributions can be obtained by changing the thickness of the phase modulation layer, and the phase of output laser is controllable.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The present application provides a vertical cavity surface emitting laser with controllable laser phase distribution and a method for manufacturing the same. The principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and the core idea of the present application. It should be noted that, for those skilled in the art, it is possible to make several improvements and modifications to the present application without departing from the principle of the present application, and such improvements and modifications also fall within the scope of the claims of the present application.
Claims (8)
1. A vertical cavity surface emitting laser having a controllable laser phase distribution, comprising:
the phase modulation layer is in a step shape, and the height of each step is different;
the phase modulation layer is located inside or on the upper surface of the second Bragg reflector layer and corresponds to the current limiting hole, and the material of the phase modulation layer is different from that of the second Bragg reflector layer.
2. A vertical cavity surface emitting laser having a controlled laser phase distribution as claimed in claim 1, wherein said phase modulation layer is stepped in left-right symmetry or stepped on one side.
3. A vertical cavity surface emitting laser according to claim 1, wherein said phase modulation layer is made of any one of the following materials:
gallium arsenide, gallium nitride, indium phosphide, silicon dioxide, silicon carbide, silicon nitride.
4. A vertical cavity surface emitting laser according to claim 1, wherein said substrate is any one of a gallium arsenide substrate, an indium phosphide substrate and a gallium nitride substrate.
5. A vertical cavity surface emitting laser according to claim 1, wherein said first electrode and said second electrode are made of any one or any combination of the following materials:
gold, aluminum, nickel, platinum, chromium, titanium, germanium.
6. A method for manufacturing a vertical cavity surface emitting laser with controllable laser phase distribution is characterized by comprising the following steps:
obtaining a laser phase distribution controllable vertical cavity surface emitting laser precursor, wherein the laser phase distribution controllable vertical cavity surface emitting laser precursor comprises a substrate, a first Bragg reflector layer, a light emitting layer and a current limiting layer which are sequentially stacked from bottom to top, or the substrate, the first Bragg reflector layer, the light emitting layer, the current limiting layer and a second Bragg reflector layer which are sequentially stacked from bottom to top;
forming a phase modulation layer to be processed on the upper surface of the laser phase distribution controllable vertical cavity surface emitting laser precursor, and etching the phase modulation layer to be processed by utilizing a photoetching technology to obtain a step-shaped phase modulation layer, wherein the height of each step is different; the material of the phase modulation layer is different from that of the second Bragg reflector layer;
forming a current confining hole in the current confining layer, the current confining hole corresponding to the phase modulation layer;
forming a second electrode on an upper surface of the second bragg mirror layer;
forming a first electrode on the lower surface of the substrate;
correspondingly, when the vertical cavity surface emitting laser precursor with controllable laser phase distribution includes the substrate, the first bragg reflector layer, the light emitting layer, and the current confinement layer, which are sequentially stacked from bottom to top, before the second electrode is formed on the upper surface of the second bragg reflector layer, the method further includes:
and forming the second Bragg reflector layer on the upper surface of the current limiting layer.
7. A method of fabricating a vertical cavity surface emitting laser according to claim 6, wherein forming a first electrode on a lower surface of said substrate comprises:
and forming the first electrode on the lower surface of the substrate by using a magnetron sputtering method.
8. A method of fabricating a vertical cavity surface emitting laser according to claim 6, wherein forming a second electrode on an upper surface of said second Bragg reflector layer comprises:
and forming the second electrode on the upper surface of the second Bragg reflector layer by using a magnetron sputtering method.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117175349A (en) * | 2023-11-02 | 2023-12-05 | 苏州长光华芯光电技术股份有限公司 | Low-sensitivity low-divergence angle semiconductor light-emitting device and preparation method thereof |
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| CN1531769A (en) * | 2001-05-29 | 2004-09-22 | ������������Үά�桤�м����� | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
| CN103078251A (en) * | 2011-09-28 | 2013-05-01 | 佳能株式会社 | Surface emitting laser and image forming apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1531769A (en) * | 2001-05-29 | 2004-09-22 | ������������Үά�桤�м����� | Wavelength-tunable vertical cavity surface emitting laser and method of making same |
| CN103078251A (en) * | 2011-09-28 | 2013-05-01 | 佳能株式会社 | Surface emitting laser and image forming apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117175349A (en) * | 2023-11-02 | 2023-12-05 | 苏州长光华芯光电技术股份有限公司 | Low-sensitivity low-divergence angle semiconductor light-emitting device and preparation method thereof |
| CN117175349B (en) * | 2023-11-02 | 2024-01-23 | 苏州长光华芯光电技术股份有限公司 | Low-sensitivity low-divergence angle semiconductor light-emitting device and preparation method thereof |
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