CN111613542A - Copper-copper bonding method - Google Patents
Copper-copper bonding method Download PDFInfo
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- CN111613542A CN111613542A CN201910132238.2A CN201910132238A CN111613542A CN 111613542 A CN111613542 A CN 111613542A CN 201910132238 A CN201910132238 A CN 201910132238A CN 111613542 A CN111613542 A CN 111613542A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
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Abstract
The invention provides a copper-copper bonding method, which comprises the following steps: a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded; b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product. Compared with the prior art, the copper-copper bonding method provided by the invention has the advantages that the formic acid treatment is adopted, so that the oxide on the copper film layer on the surface of the sample to be bonded is thoroughly removed, the surface roughness and the average area of the copper film layer are improved, and the subsequent pressurization treatment is facilitated; the copper-copper bonding method provided by the invention has the advantages of good bonding quality, high success rate, low influence on the performance of devices, simple process, low cost and suitability for industrial production.
Description
Technical Field
The invention relates to the technical field of electronic packaging, in particular to a copper-copper bonding method.
Background
With the continuous development of the electronic industry, people are striving to find ways to gradually reduce the volume, improve the performance, and increase the density of electronic systems. However, with the development of very large scale integrated circuits approaching the physical limits, three-dimensional integrated circuits, which are advantageous in terms of both physical size and cost, are an effective way to address advanced packaging issues. The three-dimensional packaging is a metal interconnection structure in the three-dimensional direction, so that the interconnection distance is greatly reduced, and the transmission rate of signals is improved. The wafer bonding technology is one of the key technologies for realizing three-dimensional packaging of integrated circuits.
In recent years, with the continuous development of three-dimensional packaging technology, copper has gradually become a main interconnection material. Copper has better conductivity than gold used in previous packaging processes, and can ensure higher strength under the condition of higher elongation, and the formation of intermetallic compounds can be reduced in the bonding process.
However, on one hand, copper is very easily oxidized in air, and on the other hand, for direct bonding of chips, bonding equipment generally adopts a high-temperature (>5000C) and pressurization method to improve bonding quality and success rate, and the high temperature and high pressure easily cause damage or performance degradation of chips or devices.
Disclosure of Invention
In view of the above, the present invention provides a method for copper-copper bonding, which can realize low-temperature direct bonding on the basis of avoiding copper oxidation, and has the advantages of good bonding quality, high success rate, simple process and low cost.
The invention provides a copper-copper bonding method, which comprises the following steps:
a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded;
b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product.
Preferably, the deposition mode in step a) is magnetron sputtering.
Preferably, the thickness of the Ti buffer layer in step a) is 5nm to 15 nm.
Preferably, the thickness of the copper thin film layer in the step a) is 450nm to 550 nm.
Preferably, the formic acid treatment process in the step b) is specifically as follows:
placing the two samples to be bonded obtained in the step a) in a closed environment, enabling the copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing, introducing inert gas for protection, heating the two samples to be bonded, and then introducing formic acid gas to enable the formic acid gas to be respectively contacted with the copper film layers of the two samples to be bonded, so as to obtain the two samples to be bonded after formic acid treatment.
Preferably, the degree of vacuum of the vacuum pumping in the step b) is 1Pa to 10 Pa.
Preferably, the heating temperature in step b) is 175 ℃ to 225 ℃.
Preferably, the flow rate of the formic acid gas introduced in the step b) is 15mL/min to 25mL/min, and the time is 0.5min to 60 min.
Preferably, the contacting in step b) is specifically performed by:
and respectively carrying out reduction reaction on the introduced formic acid gas after the formic acid gas is adsorbed on the surfaces of the copper film layers of the two samples to be bonded, and obtaining the two samples to be bonded after formic acid treatment after desorption.
Preferably, the pressure of the pressurization treatment in the step b) is 800N to 2000N, and the time is 5min to 60 min.
The invention provides a copper-copper bonding method, which comprises the following steps: a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded; b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product. Compared with the prior art, the copper-copper bonding method provided by the invention has the advantages that the formic acid treatment is adopted, so that the oxide on the copper film layer on the surface of the sample to be bonded is thoroughly removed, the surface roughness and the average area of the copper film layer are improved, and the subsequent pressurization treatment is facilitated; the copper-copper bonding method provided by the invention has the advantages of good bonding quality, high success rate, low influence on the performance of devices, simple process, low cost and suitability for industrial production.
Drawings
FIG. 1 is a schematic diagram of the structure and relative placement of two samples to be bonded according to the present invention;
FIG. 2 is a schematic view showing a process of performing a reduction reaction after formic acid gas is adsorbed on the surface of a copper thin film layer according to the present invention;
FIG. 3 is a schematic view of a process flow of formic acid treatment and pressure treatment in this order in the present invention;
FIG. 4 is a data diagram of AFM test results of samples to be bonded after formic acid treatment obtained in examples 1 to 3 of the present invention;
FIG. 5 is a TEM image of a cross section of a bonded product obtained in example 1 of the present invention;
FIG. 6 is a TEM image of a cross section of a bonded product obtained in example 2 of the present invention;
FIG. 7 is a TEM image of a cross section of a bonded product obtained in example 3 of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a copper-copper bonding method, which comprises the following steps:
a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded;
b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product.
The method comprises the steps of firstly, sequentially depositing a Ti buffer layer and a copper thin film layer on a substrate to obtain a sample to be bonded. The substrate is not particularly limited in the present invention, and a silicon substrate known to those skilled in the art may be used.
In the invention, the deposition mode is preferably magnetron sputtering; the invention has no special limitation on the specific steps and conditions of the magnetron sputtering, and the Ti buffer layer and the copper film layer can be obtained by sputtering Ti and Cu in sequence.
In the present invention, the thickness of the Ti buffer layer is preferably 5nm to 15nm, and more preferably 10 nm.
In the present invention, the thickness of the copper thin film layer is preferably 450nm to 550nm, and more preferably 500 nm.
After the sample to be bonded is obtained, the copper film layers of the sample to be bonded obtained in the two steps a) are oppositely placed, and formic acid treatment and pressurization treatment are sequentially carried out under the protection of inert gas, so that a bonded product is obtained. In the invention, the surface of the copper thin film layer of two samples to be bonded is inevitably provided with an oxide layer; the structure and relative placement of the two are schematically shown in fig. 1.
In the present invention, the formic acid treatment process preferably includes:
placing the two samples to be bonded obtained in the step a) in a closed environment, enabling the copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing, introducing inert gas for protection, heating the two samples to be bonded, and then introducing formic acid gas to enable the formic acid gas to be respectively contacted with the copper film layers of the two samples to be bonded, so as to obtain the two samples to be bonded after formic acid treatment. In the present invention, the closed environment is preferably realized by a cavity of the bonding apparatus; the source of the bonding equipment is not particularly limited by the present invention, and a homemade bonding machine well known to those skilled in the art may be used.
The invention is vacuumized and then is protected by introducing inert gas, so that the two samples to be bonded are in a closed environment isolated from oxygen, and the two samples to be bonded are prevented from being in contact with oxygen again in the whole bonding process.
In the present invention, the degree of vacuum of the evacuation is preferably 1Pa to 10 Pa.
In the present invention, the inert gas is preferably nitrogen or helium, and more preferably nitrogen. The source of the inert gas is not particularly limited in the present invention, and may be a laboratory product or a commercially available product known to those skilled in the art.
In the present invention, the heating temperature is preferably 175 to 225 ℃, more preferably 200 ℃. In the invention, when the heating temperature is lower than 150 ℃, the effect of formic acid treatment is general, and copper-copper bonding cannot be realized through subsequent pressurization treatment after formic acid treatment; when the heating temperature is higher than 225 ℃, the effect of formic acid treatment is not obviously changed, and meanwhile, the energy consumption is increased, so that the cost is not reduced.
The source of the formic acid gas is not particularly limited in the present invention, and any of laboratory products and commercial products known to those skilled in the art may be used.
In the invention, the flow rate of the introduced formic acid gas is preferably 15mL/min to 25mL/min, and more preferably 20 mL/min; the time for introducing the formic acid gas is preferably 0.5min to 60min, and more preferably 30 min.
In the present invention, the contacting process is preferably specifically:
and respectively carrying out reduction reaction on the introduced formic acid gas after the formic acid gas is adsorbed on the surfaces of the copper film layers of the two samples to be bonded, and obtaining the two samples to be bonded after formic acid treatment after desorption. In the present invention, the formic acid (HCOOH) has a good reducing property as the hydroxy acid having the simplest structure; formic acid gas can undergo adsorption and decomposition reactions on the surface of metals, particularly Cu. In the present invention, the reduction reaction process of the formic acid gas after adsorption on the surface of the copper thin film layer is shown in fig. 2. Formic acid gas is firstly adsorbed on the surface of Cu, then is decomposed into HCOO (a) and H (a), and HCOO (a) is adsorbed on the surface of Cu; with increasing temperature, HCOO (a) will decompose further to CO2(g) And H (a), reacting the finally decomposed H (a) with the oxide on the surface of the Cu to reduce the oxide on the surface of the Cu into a Cu simple substance, and desorbing the reduced water vapor and carbon dioxide gas under the flow of formic acid gas.
After two formic acid treated samples to be bonded are obtained, the two formic acid treated samples to be bonded are subjected to pressurization treatment to obtain a bonded product. In the invention, the pressurization treatment is directly carried out after the formic acid treatment, the equipment and conditions in the whole process are not changed, and the process flow schematic diagram is shown in figure 3; wherein, a is formic acid treatment, b is two formic acid treated samples to be bonded, c is pressurization treatment, and d is a bonded product.
In the present invention, the pressure of the pressurization treatment is preferably 800N to 2000N, more preferably 1000N; the time of the pressure treatment is preferably 5 to 60min, and more preferably 30 min.
According to the copper-copper bonding method provided by the invention, the formic acid treatment is adopted, so that the oxide on the copper film layer on the surface of the sample to be bonded is thoroughly removed, and meanwhile, the surface roughness and the average area of the copper film layer are improved, and the subsequent pressurization treatment is facilitated; the copper-copper bonding method provided by the invention has the advantages of good bonding quality, high success rate, low influence on the performance of devices, simple process, low cost and suitability for industrial production.
The invention provides a copper-copper bonding method, which comprises the following steps: a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded; b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product. Compared with the prior art, the copper-copper bonding method provided by the invention has the advantages that the formic acid treatment is adopted, so that the oxide on the copper film layer on the surface of the sample to be bonded is thoroughly removed, the surface roughness and the average area of the copper film layer are improved, and the subsequent pressurization treatment is facilitated; the copper-copper bonding method provided by the invention has the advantages of good bonding quality, high success rate, low influence on the performance of devices, simple process, low cost and suitability for industrial production.
In order to further illustrate the present invention, the following detailed description of the technical solutions provided by the present invention is provided with reference to examples.
Example 1
(1) And sequentially depositing a 10nm Ti buffer layer and a 500nm copper film layer on the surface of the silicon substrate by using a magnetron sputtering method to obtain a sample to be bonded.
(2) Placing the two samples to be bonded obtained in the step (1) in a closed cavity of bonding equipment, enabling copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing (below 10 Pa), introducing nitrogen for protection, heating the two samples to be bonded to 200 ℃, continuously introducing formic acid gas at a flow rate of 20mL/min for 30min, enabling the formic acid gas to be respectively adsorbed on the surfaces of the copper film layers of the two samples to be bonded, then carrying out reduction reaction, and obtaining the two samples to be bonded after formic acid treatment after desorption.
(3) And (3) pressurizing the two formic acid treated samples to be bonded obtained in the step (2) for 30min under the pressure of 1000N to obtain a bonded product.
AFM tests were performed on the formic acid-treated sample to be bonded obtained in example 1 of the present invention, and the results are shown in FIG. 4. The test result shows that the oxide on the surface of the copper film layer in the formic acid treated sample to be bonded obtained in the embodiment 1 of the invention is completely removed, the surface roughness is 2.03nm, and the average area is 10455nm2The copper-copper bonding can be achieved directly by the pressure treatment.
The bonding effect of the bonded product obtained in embodiment 1 of the present invention is characterized, and the result is shown in fig. 5; fig. 5 is a TEM photograph of a cross section of a bonded product obtained in example 1 of the present invention. As can be seen from fig. 5, the bonded product obtained in example 1 of the present invention has a completely disappeared interface, and the copper thin film layer is integrated.
The bonding strength of the bonded product obtained in example 1 of the present invention was measured by using a push-pull force tester (MFM), and the result showed that the shear strength of the bonded product obtained in example 1 of the present invention was 10 MPa.
Example 2
(1) And sequentially depositing a 10nm Ti buffer layer and a 500nm copper film layer on the surface of the silicon substrate by using a magnetron sputtering method to obtain a sample to be bonded.
(2) Placing the two samples to be bonded obtained in the step (1) in a closed cavity of bonding equipment, enabling copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing (below 10 Pa), introducing nitrogen for protection, heating the two samples to be bonded to 175 ℃, continuously introducing formic acid gas at a flow rate of 20mL/min for 30min, enabling the formic acid gas to be respectively adsorbed on the surfaces of the copper film layers of the two samples to be bonded to perform a reduction reaction, and obtaining the two samples to be bonded after formic acid treatment after desorption.
(3) And (3) pressurizing the two formic acid treated samples to be bonded obtained in the step (2) for 30min under the pressure of 1000N to obtain a bonded product.
AFM test was performed on the formic acid-treated sample to be bonded obtained in example 2 of the present invention, and the results are shown in FIG. 4. The test result shows that the oxide on the surface of the copper film layer in the sample to be bonded after formic acid treatment obtained in the embodiment 2 of the invention is completely removed, the surface roughness is 1.94nm, and the average area is 9800nm2The copper-copper bonding can be achieved directly by the pressure treatment.
The bonding effect of the bonded product obtained in the embodiment 2 of the invention is characterized, and the result is shown in fig. 6; FIG. 6 is a TEM image of the cross section of the bonded product obtained in example 2 of the present invention. As can be seen from fig. 6, the bonded product obtained in example 2 of the present invention has a completely disappeared interface, and the copper thin film layer is integrated.
The bonding strength of the bonded product obtained in example 2 of the present invention was measured by using a push pull test machine (MFM), and the result showed that the shear strength of the bonded product obtained in example 2 of the present invention was 9 MPa.
Example 3
(1) And sequentially depositing a 10nm Ti buffer layer and a 500nm copper film layer on the surface of the silicon substrate by using a magnetron sputtering method to obtain a sample to be bonded.
(2) Placing the two samples to be bonded obtained in the step (1) in a closed cavity of bonding equipment, enabling copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing (below 10 Pa), introducing nitrogen for protection, heating the two samples to be bonded to 225 ℃, continuously introducing formic acid gas at a flow rate of 20mL/min for 30min, enabling the formic acid gas to be respectively adsorbed on the surfaces of the copper film layers of the two samples to be bonded to perform a reduction reaction, and obtaining the two samples to be bonded after formic acid treatment after desorption.
(3) And (3) pressurizing the two formic acid treated samples to be bonded obtained in the step (2) for 30min under the pressure of 1000N to obtain a bonded product.
AFM tests were performed on the formic acid-treated sample to be bonded obtained in example 3 of the present invention, and the results are shown in FIG. 4. The test results show that the formic acid treated bond obtained in example 3 of the present inventionThe oxide on the surface of the copper film layer in the sample is completely removed, the surface roughness is 2.02nm, and the average area is 10350nm2The copper-copper bonding can be achieved directly by the pressure treatment.
The bonding effect of the bonded product obtained in embodiment 3 of the present invention is characterized, and the result is shown in fig. 7; FIG. 7 is a TEM image of a cross section of a bonded product obtained in example 3 of the present invention. As can be seen from fig. 7, the bonded product obtained in example 3 of the present invention has a completely disappeared interface, and the copper thin film layer is integrated.
The bonding strength of the bonded product obtained in example 3 of the present invention was measured by using a push pull tester (MFM), and the result showed that the shear strength of the bonded product obtained in example 3 of the present invention was 9.4 MPa.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A method of copper-copper bonding comprising the steps of:
a) depositing a Ti buffer layer and a copper thin film layer on a substrate in sequence to obtain a sample to be bonded;
b) placing the copper film layers of the samples to be bonded obtained in the two steps a) oppositely, and sequentially carrying out formic acid treatment and pressurization treatment under the protection of inert gas to obtain a bonded product.
2. The method according to claim 1, wherein the deposition in step a) is by magnetron sputtering.
3. The method according to claim 1, wherein the Ti buffer layer in step a) has a thickness of 5nm to 15 nm.
4. The method according to claim 1, wherein the thickness of the copper thin film layer in step a) is 450nm to 550 nm.
5. The method according to claim 1, wherein the formic acid treatment in step b) is carried out by:
placing the two samples to be bonded obtained in the step a) in a closed environment, enabling the copper film layers of the two samples to be bonded to be oppositely placed, vacuumizing, introducing inert gas for protection, heating the two samples to be bonded, and then introducing formic acid gas to enable the formic acid gas to be respectively contacted with the copper film layers of the two samples to be bonded, so as to obtain the two samples to be bonded after formic acid treatment.
6. The method of claim 5, wherein the vacuum degree of the vacuum pumping in the step b) is 1Pa to 10 Pa.
7. The method of claim 5, wherein the temperature of the heating in step b) is 175 ℃ to 225 ℃.
8. The method as claimed in claim 5, wherein the flow rate of the formic acid gas introduced in the step b) is 15mL/min to 25mL/min, and the time is 0.5min to 60 min.
9. The method according to claim 5, wherein the contacting in step b) is carried out by:
and respectively carrying out reduction reaction on the introduced formic acid gas after the formic acid gas is adsorbed on the surfaces of the copper film layers of the two samples to be bonded, and obtaining the two samples to be bonded after formic acid treatment after desorption.
10. The method according to claim 1, wherein the pressure treatment in step b) is carried out at a pressure of 800N to 2000N for a time of 5min to 60 min.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687759A (en) * | 2020-12-25 | 2021-04-20 | 中国电子科技集团公司第十八研究所 | Low-temperature semiconductor direct bonding method based on surface modification and activation |
| CN113003534A (en) * | 2021-02-24 | 2021-06-22 | 昆山微电子技术研究院 | Pressure sensor and preparation method thereof |
| CN115821397A (en) * | 2022-12-22 | 2023-03-21 | 燕山大学 | Bonded copper single crystal and atomic-scale diffusion bonding process method thereof |
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| JP2003243502A (en) * | 2002-02-18 | 2003-08-29 | Ulvac Japan Ltd | Metal connecting apparatus using organic acid |
| CN102693914A (en) * | 2011-03-24 | 2012-09-26 | 富士通株式会社 | Method of manufacturing semiconductor device |
| JP2013221175A (en) * | 2012-04-16 | 2013-10-28 | Tadatomo Suga | Method for removing surface oxide using organic acid gas under existence of metal catalyst or inert gas atmosphere, and joining device |
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2019
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| JP2003243502A (en) * | 2002-02-18 | 2003-08-29 | Ulvac Japan Ltd | Metal connecting apparatus using organic acid |
| CN102693914A (en) * | 2011-03-24 | 2012-09-26 | 富士通株式会社 | Method of manufacturing semiconductor device |
| JP2013221175A (en) * | 2012-04-16 | 2013-10-28 | Tadatomo Suga | Method for removing surface oxide using organic acid gas under existence of metal catalyst or inert gas atmosphere, and joining device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687759A (en) * | 2020-12-25 | 2021-04-20 | 中国电子科技集团公司第十八研究所 | Low-temperature semiconductor direct bonding method based on surface modification and activation |
| CN113003534A (en) * | 2021-02-24 | 2021-06-22 | 昆山微电子技术研究院 | Pressure sensor and preparation method thereof |
| CN115821397A (en) * | 2022-12-22 | 2023-03-21 | 燕山大学 | Bonded copper single crystal and atomic-scale diffusion bonding process method thereof |
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