CN111613520A - Preparation method of wafer coating metal oxide film - Google Patents

Preparation method of wafer coating metal oxide film Download PDF

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Publication number
CN111613520A
CN111613520A CN202010356900.5A CN202010356900A CN111613520A CN 111613520 A CN111613520 A CN 111613520A CN 202010356900 A CN202010356900 A CN 202010356900A CN 111613520 A CN111613520 A CN 111613520A
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Prior art keywords
oxidation
oxide film
metal oxide
layer
wafer
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CN202010356900.5A
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Chinese (zh)
Inventor
陈琳
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Suzhou Meifa Photoelectric Technology Co ltd
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Suzhou Meifa Photoelectric Technology Co ltd
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Priority to CN202010356900.5A priority Critical patent/CN111613520A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02697—Forming conducting materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers

Abstract

The invention relates to a preparation method of a wafer coating metal oxide film, which is characterized in that a compact oxide layer is formed on a silicon substrate in a dry oxygen oxidation mode; cleaning and processing the surface of the formed oxidation layer to prepare for a metal plating layer; finally, plating a metal oxide film on the surface of the compact oxide layer in an evaporation mode; the method solves the adverse conditions of metal layer loss, falling and the like caused by directly manufacturing a metal film on a silicon substrate in the traditional mode.

Description

Preparation method of wafer coating metal oxide film
Technical Field
The invention belongs to the technical field of microelectronic material preparation, and particularly relates to a preparation method of a wafer coating metal oxide film.
Background
In microelectronic devices, a wide variety of thin films are used, which can be roughly divided into five major categories: a thermal oxide film, a dielectric film, an epitaxial film, a polycrystalline silicon film, and a metal film; the applications in microelectronic devices vary, for example: the thermal oxide film and the dielectric film are mainly used for an insulating layer between the conductive layers, a mask for diffusion and ion implantation, a cover film or a passivation film which prevents loss of doping impurities and covers the doping film; the epitaxial film is mainly used in a device working area; the polycrystalline silicon film is mainly used for a gate material in an MOS device, a multi-layer metalized conductive material and a contact material of a shallow junction device; the metal film and the metal silicide film are mainly used for forming low-resistance interconnections, ohmic contacts and for adjusting a potential barrier between a metal and a semiconductor.
Meanwhile, materials used for preparing the thin film are various, such as: semiconductor materials such as silicon and gallium arsenide, metal materials such as gold and aluminum, silicon dioxide, phosphorosilicate glass, inorganic insulating materials such as silicon nitride and aluminum oxide, and inorganic semi-insulating materials such as polycrystalline silicon and amorphous silicon;
refractory metal silicides such as molybdenum and tungsten, heavy-doped polysilicon and other non-metallic low-resistance materials, polyimide organic insulating resin materials and the like; because of this, the methods for preparing thin films in microelectronic processes are very different and have different characteristics.
The film deposition technology is rapidly developed, a plurality of types are developed, the technology becomes an independent technological subject, corresponding theoretical research is very deep and wide, and almost every aspect of film science is involved from the classical thermodynamic theory to the nucleation theory established at the atomic level observation;
the traditional wafer coating metal film process generally directly manufactures a metal film on a silicon substrate, so that a plurality of problems exist, and the adverse conditions of metal layer deletion, falling and the like occur.
Therefore, it is necessary to design a method for preparing a wafer-coated metal oxide film to solve the above-mentioned problems.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a preparation method of a wafer coating metal oxide film.
In order to achieve the above objects and other related objects, the present invention provides the following technical solutions: a preparation method of a wafer coating metal oxide film comprises the following specific steps:
the method comprises the following steps: forming a compact oxide layer on a silicon substrate in an oxidation mode;
step two: cleaning and processing the surface of the formed oxidation layer to prepare for a metal plating layer;
step three: finally, plating a metal oxide film on the surface of the compact oxide layer.
Preferably, when the oxidation is carried out in step one, chlorine is added in an oxidizing atmosphere.
Preferably, the oxidation mode of the first step is dry oxygen oxidation.
Preferably, the third step is to coat a metal oxide film on the surface of the dense oxide layer by a vapor deposition method.
Preferably, the evaporation is carried out in a vacuum environment, and the energy of the oxygen plasma beam formed in the evaporation process is 0-300 eV.
Preferably, the temperature of the dry oxygen oxidation is 1100-1400 ℃, and the thickness of the oxygen cushion is 0-0.1 [ mu ] m.
For the above scheme, the explanation is as follows:
according to the preparation method of the wafer coating metal oxide film, before the metal film layer is plated, a compact oxide layer is formed on the surface of the silicon substrate in an oxidation mode, so that the adverse conditions of metal layer deletion, falling and the like can be effectively avoided before the metal film layer is plated.
The silicon substrate is oxidized, and the oxidation is generally divided into three types, namely dry oxygen oxidation, wet oxygen oxidation and water vapor oxidation, and the three oxidation reactions are characterized as follows:
dry oxygen oxidation: the oxidation speed is low, the uniformity and the repeatability are good, the structure is compact, and the masking property is good;
wet oxygen oxidation: the oxidation speed is high, the uniformity and the repeatability are good, the structure is general, the masking property is basically met, and the water temperature is 95 ℃;
water vapor oxidation: the oxidation speed is high, the uniformity and repeatability are poor, the structure is loose, the masking property is poor, and the water temperature is 102 ℃;
by combining the advantage and disadvantage comparison of the three oxidation modes, the oxide layer made by dry oxygen is the best, and a compact oxide layer is required according to the requirements of people, so that the dry oxygen is selected for oxidation.
The quality of SiO2 can be greatly improved by adding chlorine into the oxidizing atmosphere, and the oxidation rate can be increased, and the main points are as follows: passivating mobile ions, particularly sodium ions; increasing the minority carrier lifetime in silicon; the defects in the process are reduced, and the breakdown resistance is improved; reducing the interface state density and the fixed charge density; reducing stacking faults in the silicon.
The metal coating is plated by evaporation, the quality of the coating generated by the method has obvious advantages compared with sputtering, the surface defects and the whole surface state are better than sputtering, the speed is increased compared with sputtering, and the evaporation is selected in consideration of comprehensive factors.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
the invention relates to a preparation method of a wafer coating metal oxide film, which is characterized in that a compact oxide layer is formed on a silicon substrate in a dry oxygen oxidation mode; cleaning and processing the surface of the formed oxidation layer to prepare for a metal plating layer; finally, plating a metal oxide film on the surface of the compact oxide layer in an evaporation mode; the method solves the adverse conditions of metal layer deletion, falling and the like caused by directly manufacturing a metal film on a silicon substrate in the traditional mode, has stable reaction, and can effectively ensure the quality of microelectronic products.
Drawings
FIG. 1 is a schematic view of a wafer coating metal oxide film structure.
In the above figures, a silicon substrate 1, an oxide layer 2, and a metal thin film 3.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Please refer to fig. 1. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the conditions under which the present invention can be implemented, so that the present invention has no technical significance, and any structural modification, ratio relationship change, or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention. In addition, the terms "upper", "lower", "left", "right", "middle" and "one" used in the present specification are for clarity of description, and are not intended to limit the scope of the present invention, and the relative relationship between the terms and the terms is not to be construed as a scope of the present invention.
Example (b): as shown in fig. 1, a method for preparing a wafer coating metal oxide film comprises the following steps: the method comprises the following steps: forming a compact oxide layer 2 on a silicon substrate 1 in an oxidation mode; step two: cleaning and processing the surface of the formed oxide layer 2 to prepare for a metal coating; step three: finally, plating a metal film 3 on the surface of the compact oxide layer 2. According to the preparation method of the wafer coating metal oxide film, before the metal film 3 is plated, a compact oxide layer 2 is formed on the surface of the silicon substrate 1 in an oxidation mode, so that the adverse conditions of metal layer deletion, falling and the like can be effectively avoided before the metal film 3 is plated.
The preferred embodiment is as follows:
when the oxidation is carried out in the first step, chlorine is added into the oxidation atmosphere; the quality of SiO2 can be greatly improved by adding chlorine into the oxidizing atmosphere, and the oxidation rate can be increased, and the main points are as follows: passivating mobile ions, particularly sodium ions; increasing the minority carrier lifetime in silicon; the defects in the process are reduced, and the breakdown resistance is improved; reducing the interface state density and the fixed charge density; reducing stacking faults in the silicon.
The oxidation mode of the first step is dry oxygen oxidation; the silicon substrate 1 is oxidized, and the oxidation is generally classified into dry oxygen oxidation, wet oxygen oxidation and water vapor oxidation, and the three oxidation reactions are characterized in that: dry oxygen oxidation: the oxidation speed is low, the uniformity and the repeatability are good, the structure is compact, and the masking property is good; wet oxygen oxidation: the oxidation speed is high, the uniformity and the repeatability are good, the structure is general, the masking property is basically met, and the water temperature is 95 ℃; water vapor oxidation: the oxidation speed is high, the uniformity and repeatability are poor, the structure is loose, the masking property is poor, and the water temperature is 102 ℃;
by combining the advantage and disadvantage comparison of the three oxidation modes, it can be found that the oxide layer 2 made of dry oxygen is the best, and a compact oxide layer 2 is needed according to our requirements, so dry oxygen oxidation is selected.
The evaporation is carried out in a vacuum environment for reaction, and the energy of an oxygen plasma beam current formed in the evaporation process is 0-300 eV.
The temperature of the dry oxygen oxidation is 1100-1400 ℃, and the thickness of the oxygen cushion is 0-0.1 mu m.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.

Claims (6)

1. A preparation method of a wafer coating metal oxide film is characterized by comprising the following steps: the method comprises the following specific steps:
the method comprises the following steps: forming a compact oxide layer on a silicon substrate in an oxidation mode;
step two: cleaning and processing the surface of the formed oxidation layer to prepare for a metal plating layer;
step three: finally, plating a metal oxide film on the surface of the compact oxide layer.
2. The method for preparing a wafer-coated metal oxide film according to claim 1, wherein: when the oxidation is carried out in the first step, chlorine gas is added into the oxidizing atmosphere.
3. The method for preparing a wafer-coated metal oxide film according to claim 1, wherein: the oxidation mode of the first step is dry oxygen oxidation.
4. The method for preparing a wafer-coated metal oxide film according to claim 1, wherein: and step three, plating a metal oxide film on the surface of the compact oxide layer by specifically adopting an evaporation method.
5. The method for preparing a wafer-coated metal oxide film according to claim 4, wherein: the evaporation is carried out in a vacuum environment, and the energy of an oxygen plasma beam current formed in the evaporation process is 0-300 eV.
6. The method for preparing a wafer-coated metal oxide film according to claim 3, wherein: the temperature of the dry oxygen oxidation is 1100-1400 ℃, and the thickness of the oxygen cushion is 0-0.1 mu m.
CN202010356900.5A 2020-04-29 2020-04-29 Preparation method of wafer coating metal oxide film Pending CN111613520A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024007601A1 (en) * 2022-07-07 2024-01-11 通威太阳能（安徽）有限公司 Solar cell preparation method, and coating carrier plate for solar cell and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736422A (en) * 1994-11-26 1998-04-07 Dong Yang Cement Corporation Method for depositing a platinum layer on a silicon wafer
JP2007131924A (en) * 2005-11-11 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> Method for forming platinum thin film
CN102222630A (en) * 2011-06-03 2011-10-19 中国科学院上海微系统与信息技术研究所 Method for preparing Sn-Ag-In ternary lead-free flip salient point
CN203551814U (en) * 2013-11-29 2014-04-16 哈尔滨理工大学 Metal-plating silica glass optical attenuation sheet

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5736422A (en) * 1994-11-26 1998-04-07 Dong Yang Cement Corporation Method for depositing a platinum layer on a silicon wafer
JP2007131924A (en) * 2005-11-11 2007-05-31 Nippon Telegr & Teleph Corp <Ntt> Method for forming platinum thin film
CN102222630A (en) * 2011-06-03 2011-10-19 中国科学院上海微系统与信息技术研究所 Method for preparing Sn-Ag-In ternary lead-free flip salient point
CN203551814U (en) * 2013-11-29 2014-04-16 哈尔滨理工大学 Metal-plating silica glass optical attenuation sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024007601A1 (en) * 2022-07-07 2024-01-11 通威太阳能（安徽）有限公司 Solar cell preparation method, and coating carrier plate for solar cell and application thereof

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Application publication date: 20200901