CN111613400A - Normal-temperature NTC thermistor film and preparation method thereof - Google Patents

Normal-temperature NTC thermistor film and preparation method thereof Download PDF

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CN111613400A
CN111613400A CN202010393189.0A CN202010393189A CN111613400A CN 111613400 A CN111613400 A CN 111613400A CN 202010393189 A CN202010393189 A CN 202010393189A CN 111613400 A CN111613400 A CN 111613400A
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film
target
sputtering
ntc thermistor
temperature
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CN111613400B (en
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付学成
程秀兰
王英
乌李瑛
权雪玲
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Shanghai Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds
    • H01C7/047—Vanadium oxides or oxidic compounds, e.g. VOx
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/12—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
    • H01C17/14—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques by chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • H01C7/042—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient mainly consisting of inorganic non-metallic substances
    • H01C7/043—Oxides or oxidic compounds

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Abstract

The invention discloses a normal temperature NTC thermistor film and a preparation method thereof; the film is VO2，Mg2V2O5A glassy multi-component material as a main component. During preparation, a reducing metal target and a vanadium pentoxide target are subjected to co-sputtering deposition of a film on a substrate under a high vacuum condition. The invention particularly utilizes the excellent reduction performance of magnesium atoms to reduce the valence of vanadium pentoxide to +5 and the valence of vanadium to +4 to prepare the NTC film. Tong (Chinese character of 'tong')The power applied to the magnesium target and the vanadium pentoxide target is changed, the proportion of different components in the film is adjusted, and the resistance, the temperature rise and the thermal hysteresis and the resistivity of the film can be adjusted. Compared with the traditional method for preparing the NTC film, the method for preparing the NTC film is simpler, quicker and more efficient, and is compatible with various substrates; the prepared NTC film does not need high-temperature annealing, and has good crystallization condition; and has the characteristics of high resistance temperature coefficient, small thermal hysteresis width, low film resistivity, high material constant and the like under the room temperature condition.

Description

Normal-temperature NTC thermistor film and preparation method thereof
Technical Field
The invention relates to the field of functional materials, in particular to a normal-temperature NTC thermistor film and a preparation method thereof; in particular to a VO2，Mg2V2O5A normal temperature NTC thermistor film as a main component and a preparation method thereof.
Background
The NTC thermistor is a negative temperature coefficient thermistor, and the resistance value characteristic becomes smaller as the temperature increases. Since 1940, it was discovered that semiconductors with a large negative temperature coefficient of resistance, which is in the range of- (1-6)%/° c, can be obtained by mixing certain transition metal oxides in a certain ratio, molding and sintering.
In recent years, many NTC materials have been studied, including those mainly composed of zinc oxide and those mainly composed of manganese oxide. The research on the glassy thermistor material taking vanadium dioxide as the main body is rarely reported.
Vanadium dioxide is a typical phase-change metal oxide, the phase transition temperature of a single crystal is 68 ℃, the temperature is continuously increased, vanadium dioxide is converted from a semiconductor phase to a metal phase, the phase transition is reversible, and thermal hysteresis exists. However, in practical applications, it is required that the thermal resistance Temperature Coefficient (TCR) is high at room temperature and has no thermal hysteresis. At present, many researches on the preparation of vanadium dioxide films are carried out at home and abroad, and physical preparation methods can be divided into direct-current magnetron sputtering, radio-frequency sputtering, pulsed laser deposition, ion beam enhanced deposition and the like. Chemical preparation methods can be roughly classified into chemical vapor deposition and sol-gel methods. The films prepared by the methods can obtain vanadium dioxide only by a high-temperature annealing process, and the films prepared by the methods can obtain a thermosensitive film with TCR of- (2-4)%/° C at room temperature only by doping atoms of other elements.
Preparation of VO as presently disclosed2VO doped with thin film or metal element2There are many patents for thin films. But because of VO2The phase transition temperature of the film was 67 ℃ and the TCR was very low at room temperature. Plus VO2The film has phase change thermal hysteresis of about 3 ℃, and cannot be directly applied to the field of infrared measurement. Although the phase transition temperature can be adjusted by doping other metal elements, the phase transition temperature is adjusted to be close to the room temperature, but the TCR value can be greatly reduced, and the performance of the film is influenced.
Disclosure of Invention
The invention aims to provide a normal-temperature NTC thermistor film and a preparation method thereof. The invention adopts a co-sputtering method, utilizes the excellent reduction performance of Mg atoms to reduce the valence of V with the valence of +5, and prepares VO2，Mg2V2O5A glassy multi-component material as a main component. The material has high Temperature Coefficient of Resistance (TCR) and material constant B under the normal temperature condition (-30 ℃ to 30℃)nHigh resistivity of the film. The preparation method can prepare the deposited NTC film under the conditions of high vacuum and room temperature, is simpler, quicker and more efficient, is compatible with various substrates such as silicon, silicon dioxide, silicon nitride, silicon carbide, glass, sapphire, mica sheets, metal sheets, even flexible substrates and the like, does not need high-temperature annealing, is suitable for large-scale production, and has very wide application prospect.
The purpose of the invention is realized by the following technical scheme:
the invention relates to a normal temperature NTC thermistor film, which is VO2，Mg2V2O5A glassy multi-component material as a main component.
The film is prepared by carrying out co-sputtering on a reducing metal target and a vanadium pentoxide target. More specifically, under the vacuum condition, the reductive metal target and the vanadium pentoxide target are subjected to co-sputtering deposition on the substrate to prepare the film.
Further, the temperature coefficient of resistance TCR of the film is-14% -5.5%/DEG C under the condition of-30 ℃,material constant Bn9100K-6200K, and the film has a resistivity of 20-0.1 omega cm.
The invention also relates to a preparation method of the normal-temperature NTC thermistor film, which comprises the following steps: and co-sputtering the reducing metal target and the vanadium pentoxide target on the substrate through magnetron sputtering coating or ion beam sputtering coating to prepare the normal-temperature NTC thermistor film.
Further, the reducing metal target includes a metallic magnesium target, an aluminum target, or a lithium target.
In a preferred embodiment of the present invention, a magnesium metal target is used. Using other metal targets with reducing properties, e.g. Li, Al, etc. targets and V2O5Co-sputtering can theoretically prepare VO2NTC film as main component.
Furthermore, the power ratio of the magnesium metal target to the vanadium pentoxide target is 20-40: 300. The proportion of different components in the prepared film is related to the power ratio of the metal magnesium target to the vanadium pentoxide target, and the proportion of the components of the film can be adjusted by adjusting the power applied to the two targets, so that the heating and cooling hysteresis width and the resistivity of the film resistor can be adjusted.
Further, the substrate comprises silicon, silicon dioxide, silicon nitride, silicon carbide, glass, sapphire, mica sheets, metal sheets, or a flexible base substrate.
Further, the co-sputtering is glow sputtering by introducing high-purity argon under vacuum condition.
Further, the co-sputtering is carried out under vacuum to reach 5 x 10-4～1*10-6When Pa, introducing high-purity argon until the working pressure is 0.5-5 Pa; after the air pressure is stable, carrying out pre-sputtering for 1-5 min on a reduced metal (magnesium) target with the power of 20-100W and a vanadium pentoxide target with the power of 100-300W; and co-sputtering for 10-60 min by using the reduced metal (magnesium) target power of 20-40W, the vanadium pentoxide target power of 100-300W and the working air pressure of 0.5-5 pa.
Further, the initial vacuum degree in the cavity of the co-sputtering device is 3 x 10-4Pa-1*10-7. The vacuum degree is set to prevent magnesium from being inOxidation during sputtering.
Further, the co-sputtering is performed at 10 ℃ to 30 ℃.
Further, the co-sputtering does not require an annealing process.
According to the invention, the NTC heat-sensitive film can be prepared at room temperature without annealing, and can be prepared on a transparent flexible substrate or a glass substrate which is not high-temperature resistant.
The technical principle of the invention is as follows: at vacuum degree higher than 5 x 10-4Under the condition of Pa, argon is utilized for glow ionization, and bombardment sputtering is carried out on a high-purity reduced metal target (Mg target) and a high-purity V simultaneously2O5A target. Because Mg atoms have very good reduction performance, the Mg atoms are easy to combine with oxygen to generate MgO or other compounds of Mg in the co-sputtering film forming process, thereby reducing the valence of V with the valence of +5 and generating VO2,Mg2V2O5And mixing a glassy material with a plurality of substances.
Compared with the prior art, the invention has the following beneficial effects:
1) the invention adopts a high-purity metal magnesium target and a high-purity vanadium pentoxide target to carry out co-sputtering deposition of a film under the condition of high vacuum, and prepares the NTC thermosensitive film with glassy state mixed with various substances by using excellent reduction performance of magnesium atoms to reduce the valence of vanadium in the vanadium pentoxide to +5 and + 4; the film components are adjusted and controlled by the power of different targets, and the thickness can be adjusted by the sputtering time; when the atomic ratio of Mg to V is from 7:93 to 60:40, NTC films with different component ratios can be prepared on the silicon substrate;
2) VO is used as NTC film prepared by the invention2,Mg2V2O5As the main component; the material has a Temperature Coefficient of Resistance (TCR) between-14 to 5.5 percent/DEG C at the normal temperature (-30 to 30 ℃), and a material constant BnThe resistivity of the film is between 9100K and 6200K and is between 20 and 0.1 omega cm;
3) compared with the traditional method for preparing the NTC film, the method for preparing the NTC film is simpler, quicker and more efficient, and is compatible with various substrates such as various silicon, silicon dioxide, silicon nitride, silicon carbide, glass, sapphire, mica sheets, metal sheets and even flexible substrates;
4) in the presently disclosed technology for preparing the VO2 thin film by sputtering, the prepared thin film needs to be annealed and recrystallized, and the annealing temperature needs 550-620 ℃ to obtain the + 4V oxide thin film. In the sputtering process, the valence of vanadium of +5 is successfully reduced to +4 by magnesium, and the prepared NTC film does not need high-temperature annealing and has good crystallization condition;
5) the prepared NTC film has the characteristics of high resistance temperature coefficient, small thermal hysteresis width, low film resistivity and high material constant at room temperature, and can be applied to the fields of uncooled infrared focal plane imaging, switching power supplies, UPS power supplies, electronic ballasts, temperature sensors, automatic adjusting heaters and the like.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic diagram of the preparation principle of the present invention;
FIG. 2 is the XRD test results for each film sample of example 1;
FIG. 3 is an XPS measurement of V in the films prepared when the atomic ratio of Mg to V is 7: 93;
FIG. 4 is an XPS detection of Mg in films prepared when the atomic ratio of Mg to V is 7: 93;
FIG. 5 is a graph of resistance versus temperature for various film samples of example 1 at various temperatures;
FIG. 6 is a surface view of the film prepared without annealing in example 1;
FIG. 7 is a side view of a film prepared without annealing in example 1; it shows very good crystallization.
Detailed Description
In order that the manner in which the above recited features and advantages of the present invention are obtained will become more readily apparent, the invention will be further described with reference to specific embodiments thereof. The examples are merely illustrative of the present invention and the present invention is not limited to the following examples. The following describes the embodiments of the present invention in detail with reference to the test data chart.
Example 1
In this embodiment, a common P-type (100) silicon wafer is used as a substrate, and an NTC film is prepared on the surface thereof, as shown in fig. 1; the method comprises the following specific steps.
1. Cleaning a substrate: the silicon wafer was immersed in dilute hydrochloric acid (10% HCL) for 5 minutes to remove metal ions. After being washed clean, the materials are respectively put into acetone and isopropanol to be soaked for 5 minutes to remove oil stains, and then the materials are dried in a nitrogen oven after being washed clean.
2. Selecting equipment and a target material: the sputtering equipment is a denton multi-target magnetron sputtering coating machine, and the target materials are metal magnesium with the diameter of 3 inches and the thickness of 5 millimeters and the purity of 99.999 percent and vanadium pentoxide ceramic target with the purity of 99.999 percent.
3. And (3) film deposition: the substrate was placed on a water-cooled work piece table, the chamber was closed, and the vacuum was pulled to 3 x 10-4After Pa, setting argon flow of 30sccm, working pressure of 0.6Pa, magnesium target power of 100W and vanadium pentoxide target power of 300W, and respectively pre-sputtering for 5 minutes. The method is used for removing the surface layer of the magnesium target which can be oxidized and removing the surface layer of the vanadium pentoxide which can be polluted by other materials. Then setting the power of the magnesium target to be 20W, the power of the vanadium pentoxide target to be 300W, the working air pressure to be 0.6pa, and carrying out co-sputtering for 30 min. The thickness of the deposited film was measured to be about 200 nm.
4. The sputtering power of the magnesium target is changed for comparison experiments: keeping other process conditions unchanged, respectively setting the power of the magnesium target to 30W and 40W after the pre-sputtering is finished, setting the power of the vanadium pentoxide target to 300W, and carrying out co-sputtering for 30min at the working air pressure of 0.6 pa. Two batches of samples were then prepared for comparative testing.
5. Performance test 1: the sample composition was tested using EDS. As the power applied to the magnesium target increased from 20W to 30W, 40W, the Mg to V atomic ratio increased from 7:93 to 30:70, 60: 40.
6. Performance test 2: the XRD test results show that in FIG. 2, the film has various components and V which is not reduced2O5In amorphous form within the film. The film can detect VO2,Mg2V2O5Become equal toAnd (4) the existence of the score.
7. Performance test 3: the Mg and V valences were detected by XPS. When the atomic ratio of Mg to V is 33.5:66.5, the prepared film has Mg +2 valence and V +4 valence, as shown in FIG. 3 and FIG. 4.
8. Performance test 4: testing the relationship curve of the resistance and the temperature of the film at different temperatures by using a Hall effect instrument, as shown in figure 5; the curve coincidence of the same material shows that the material has no thermal hysteresis and good performance when being heated and cooled. Under the condition of room temperature (17-35 ℃), the TCR of the film is between (14-5.5%)/° C, and the thermal hysteresis width is within 1.4 ℃. Material constant BnIs between 8000K and 6200K.
9. And (5) performance test: testing the relation curve of the resistance and the temperature of the test film at different temperatures by a PPMS instrument at low temperature, wherein the Temperature Coefficient of Resistance (TCR) of the film prepared by the Mg target co-sputtering at the normal temperature of minus 30-30 ℃ is between minus 14-5.5%)/DEG C, and the material constant B isnThe resistivity of the film is between 9100K and 6200K and is between 20 and 0.1 omega cm.
10. Performance test 6 VO in co-sputter prepared films when the sputtering power of the Mg target was increased to 40W2Disappearance, (116) MgV of crystallographic orientation2O5Predominantly, the crystallization of the film was better, as shown in FIGS. 6 and 7.
11. The film material prepared by the invention does not need annealing, and if the film material is annealed at a high temperature of more than 400 ℃, the performance of the film material can be modified even under the protection of inert gas atmosphere such as argon.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes and modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.

Claims (10)

1. A normal temperature NTC thermistor film is characterized in that the film is VO2，Mg2V2O5A glassy multihybrid material film as a main component.
2. The normal-temperature NTC thermistor film according to claim 1, wherein the film has a temperature coefficient of resistance TCR at-30 ℃ to 30 ℃ of-14% to 5.5%/DEG C and a material constant Bn9100K-6200K, and the film has a resistivity of 20-0.1 omega cm.
3. A method for preparing a normal temperature NTC thermistor thin film according to claim 1, comprising: and co-sputtering the reducing metal target and the vanadium pentoxide target on the substrate by adopting magnetron sputtering coating or ion beam sputtering coating to prepare the normal-temperature NTC thermistor film.
4. The method of preparing a normal temperature NTC thermistor of claim 3, wherein the reducing metal target comprises a magnesium metal target, an aluminum target or a lithium target.
5. The method for preparing a normal-temperature NTC thermistor film of claim 4, wherein the power ratio of the metal magnesium target to the vanadium pentoxide target is 20-40: 300.
6. The method of claim 3, wherein the substrate comprises silicon, silicon dioxide, silicon nitride, silicon carbide, glass, sapphire, mica sheets, metal sheets, or a flexible base substrate.
7. The method of claim 3, wherein the co-sputtering is performed in a vacuum of up to 5 x 10-4～1*10-6When Pa, introducing high-purity argon until the working pressure is 0.5-5 Pa; after the air pressure is stable, carrying out pre-sputtering for 1-5 min on a reduced metal target with the power of 20-100W and a vanadium pentoxide target with the power of 100-300W; and co-sputtering for 10-60 min by using the reduced metal (magnesium) target power of 20-40W, the vanadium pentoxide target power of 100-300W and the working air pressure of 0.5-5 pa.
8. The method of claim 3, wherein the initial vacuum degree in the co-sputtering chamber is 3 x 10-4Pa-1*10-7Pa。
9. The method of preparing a normal temperature NTC thermistor thin film according to claim 3, wherein the co-sputtering is performed at 10 ℃ to 30 ℃.
10. The method of claim 3, wherein the co-sputtering is performed without any annealing.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257503A (en) * 2021-05-13 2021-08-13 中国科学院新疆理化技术研究所 All-inorganic flexible thermosensitive device and preparation method thereof

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Publication number Priority date Publication date Assignee Title
CN103540903A (en) * 2013-10-21 2014-01-29 中国科学院上海硅酸盐研究所 Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof
CN104030356A (en) * 2013-03-06 2014-09-10 中国科学院上海硅酸盐研究所 Vanadium dioxide doped powder, and film and preparation method thereof
CN105624629A (en) * 2016-03-26 2016-06-01 上海大学 B-phase VO2 thermal-sensitive film prepared through doping of high-valence metal positive ions and preparation method thereof
CN105937019A (en) * 2016-06-12 2016-09-14 中国科学院上海硅酸盐研究所 VO2 thin film doped with metallic element Mg and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104030356A (en) * 2013-03-06 2014-09-10 中国科学院上海硅酸盐研究所 Vanadium dioxide doped powder, and film and preparation method thereof
CN103540903A (en) * 2013-10-21 2014-01-29 中国科学院上海硅酸盐研究所 Low-temperature high-resistance temperature coefficient non-heat stagnation thin-film material and preparation method thereof
CN105624629A (en) * 2016-03-26 2016-06-01 上海大学 B-phase VO2 thermal-sensitive film prepared through doping of high-valence metal positive ions and preparation method thereof
CN105937019A (en) * 2016-06-12 2016-09-14 中国科学院上海硅酸盐研究所 VO2 thin film doped with metallic element Mg and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113257503A (en) * 2021-05-13 2021-08-13 中国科学院新疆理化技术研究所 All-inorganic flexible thermosensitive device and preparation method thereof
CN113257503B (en) * 2021-05-13 2023-01-03 中国科学院新疆理化技术研究所 All-inorganic flexible thermosensitive device and preparation method thereof

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