CN111611764B - Pupil evaluation method and system and electronic device thereof - Google Patents
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- 210000001747 pupil Anatomy 0.000 title claims abstract description 166
- 238000011156 evaluation Methods 0.000 title claims abstract description 62
- 238000012360 testing method Methods 0.000 claims abstract description 76
- 238000004088 simulation Methods 0.000 claims abstract description 44
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- 238000012545 processing Methods 0.000 claims abstract description 35
- 238000001259 photo etching Methods 0.000 claims abstract description 25
- 238000012216 screening Methods 0.000 claims abstract description 9
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- 238000001459 lithography Methods 0.000 description 13
- 238000004590 computer program Methods 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 7
- 238000009826 distribution Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
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- 238000005457 optimization Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a pupil evaluation method and a system thereof, and an electronic device, wherein in the pupil evaluation method and the system thereof, key patterns meeting expected requirements are obtained based on a generated test pattern set and an optical model corresponding to a pupil to be evaluated, and through simulation processing, the relation among X-direction imbalance, Y-direction imbalance, ellipticity values and photoetching performance matched with the corresponding pupil to be evaluated can be established, so that visual understanding of the influence of pupil parameters on the photoetching performance can be provided. According to the invention, by acquiring the optical model matched with the pupil to be evaluated, a corresponding test pattern can be simulated aiming at the pupil to be evaluated, and the corresponding X-direction imbalance, Y-direction imbalance and ellipticity of the pupil to be evaluated can be further obtained based on the test pattern obtained by screening.
Description
[ field of technology ]
The invention relates to the technical field of lithography, in particular to a pupil evaluation method, a pupil evaluation system and an electronic device.
[ background Art ]
Photolithography is the most important manufacturing process in modern very large scale integrated circuit manufacturing processes, i.e., the important means of transferring the design pattern of the integrated circuit on the mask to the silicon wafer by a photolithographic machine. As feature sizes shrink, process windows available for fabrication become smaller and smaller, the overall lithographic process needs to be precisely controlled, and hardware and software components of the lithographic process present more stringent challenges, such as pupil, aberration, mask table and workpiece table vibration levels, etc.
However, due to the defect of hardware manufacture, there is no ideal perfectly symmetrical pupil in practice, and usually the pupil will have a certain degree of imbalance, and the existing pupil imbalance is a numerical value, which is difficult to give a visual understanding, such as how much error is caused to the actual photolithography process, and is difficult to give a reference value for the visual pupil affecting the photolithography performance.
Thus, there is a need to provide a quantitative pupil evaluation scheme that can exhibit lithographic performance.
[ invention ]
In order to overcome the technical problems, the invention provides a novel pupil evaluation method and system and an electronic device.
In order to solve the technical problems, the invention provides a technical scheme as follows: a pupil evaluation method, comprising the steps of: step S1, obtaining a test graph set; step S2, providing a pupil to be evaluated, and acquiring an optical model matched with the pupil; step S3, performing simulation processing on all the test patterns in the step S1 by utilizing the optical model in the step S2, selecting part of test patterns meeting the requirement of photoetching performance from all the test patterns based on the image logarithmic slope of the test patterns and the size of a process window, and selecting key patterns meeting the preset requirement from the test patterns meeting the requirement of photoetching performance; step S4, analyzing and processing the key graph obtained in the step S3 to obtain a simulation result of the key graph, wherein the simulation result corresponds to the X-direction unbalanced degree, the Y-direction unbalanced degree and the ellipticity of the pupil to be evaluated; the sequence of the step S1 and the step S2 may be interchanged or may be performed simultaneously.
Preferably, the step S4 specifically includes the following steps: step S41, obtaining the edge position error EPE (X) of each key pattern selected in step S3 corresponding to the X positive direction + ) Edge position error EPE (X) - ) The difference diff (X) is calculated based on the difference diff (X) of all selected key patterns to obtain the corresponding square root X RMS The method comprises the steps of carrying out a first treatment on the surface of the Step S42, obtaining the edge position error EPE (Y + ) Edge position error EPE (Y - ) The difference diff (Y) is calculated based on the difference diff (Y) of all selected key patterns to obtain the corresponding square root Y RMS The method comprises the steps of carrying out a first treatment on the surface of the Step S43, obtaining the critical dimension CD of each critical pattern selected in step S3 corresponding to the symmetric line in the X direction X And lines symmetrical in the Y directionCD critical dimension of (c) Y Calculating the difference diff (E) of all selected key patterns to obtain the corresponding root of all selected key patterns RMS The method comprises the steps of carrying out a first treatment on the surface of the The steps S41, S42 and S43 may be performed in any order or may be performed simultaneously.
Preferably, the pupil evaluation method further includes the steps of: step S44, based on the obtained root X RMS Root of Fangzhong Y RMS Root of Fangzhong E RMS And correspondingly outputting the unbalance degree in the X direction and the unbalance degree in the Y direction of the pupil. Preferably, in the above step S4, the root X of the square root RMS Degree of unbalance with X direction, root of square average Y RMS Degree of unbalance with Y direction, root of square average E RMS And the ellipticity is in a positive relation with the ellipticity.
Preferably, after step S4, further comprising: and S5, storing the simulation results which are obtained in the step S4 and matched with the unbalance degree in the X direction, the unbalance degree in the Y direction and the ellipticity into a database table. Based on the simulation results obtained above, a way of calculating lithographic performance can be implemented to evaluate pupil asymmetry.
In order to solve the above technical problems, the present invention provides another technical solution as follows: a pupil evaluation system, comprising: the graph providing module is used for obtaining a test graph set; the optical model matching module is used for providing a pupil to be evaluated and acquiring an optical model matched with the pupil; the pattern screening module is used for carrying out simulation processing on all the test patterns by utilizing the optical model, selecting part of test patterns meeting the requirement of photoetching performance from all the test patterns based on the image logarithmic slope of the test patterns and the size of the process window, and selecting key patterns meeting the preset requirement from the test patterns meeting the requirement of photoetching performance; and the analysis processing module is used for analyzing and processing the obtained key graph to obtain a key graph simulation result, wherein the simulation result corresponds to the X-direction unbalanced degree, the Y-direction unbalanced degree and the ellipticity of the evaluation pupil.
Preferably, the analysis processing module further comprises: an X-direction unbalanced degree operation unit for obtaining each selectedEdge position error EPE (X + ) Edge position error EPE (X) - ) The difference diff (X) is calculated based on the difference diff (X) of all selected key patterns to obtain the corresponding square root X RMS The method comprises the steps of carrying out a first treatment on the surface of the A Y-direction unbalanced degree operation unit for obtaining the edge position error EPE (Y + ) Edge position error EPE (Y - ) The difference diff (Y) is calculated based on the difference diff (Y) of all selected key patterns to obtain the corresponding square root Y RMS The method comprises the steps of carrying out a first treatment on the surface of the And an ellipticity operation unit for obtaining the critical dimension CD of each selected critical pattern corresponding to the symmetric line in the X direction X Critical dimension CD with symmetric line in Y-direction Y Calculating the difference diff (E) of all selected key patterns to obtain the corresponding root of all selected key patterns RMS The method comprises the steps of carrying out a first treatment on the surface of the And an evaluation unit for obtaining root X RMS Root of Fangzhong Y RMS Root of Fangzhong E RMS And evaluating the unbalance degree in the X direction and the unbalance degree in the Y direction of the pupil.
In order to solve the above technical problems, the present invention provides another technical solution as follows: an electronic device comprising one or more processors; and a storage means for storing one or more programs which, when executed by the one or more processors, cause the one or more processors to implement the pupil evaluation method as described above.
Compared with the prior art, the pupil evaluation method, the pupil evaluation system and the electronic device provided by the invention have the following beneficial effects:
according to the pupil evaluation method and the pupil evaluation system, the key patterns meeting the expected requirements are obtained based on the generated test pattern set and the optical model corresponding to the pupil to be evaluated, and the relation among the X-direction imbalance, the Y-direction imbalance, the ellipticity value and the photoetching performance matched with the pupil to be evaluated can be established through simulation processing, so that visual understanding of the influence of the pupil parameters on the photoetching performance can be provided. In the invention, by acquiring the optical model matched with the pupil to be evaluated, a corresponding test pattern can be simulated aiming at the pupil to be evaluated, and the corresponding X-direction unbalanced degree, Y-direction unbalanced degree and ellipticity of the pupil to be evaluated can be obtained based on the test pattern obtained by screening.
Further, in the invention, the selected preset number of key patterns meeting the requirements of photoetching performance and preset requirements can be obtained based on the image log slope and the size of a process window, and when the test patterns subjected to simulation processing are screened, the test patterns with larger image log slope and larger process window are left. Further, in order to further improve the performance of the test patterns meeting the requirements of lithography, key patterns meeting the preset requirements are selected. Based on the screening step, a key area matched with the pupil to be evaluated can be selected from a large number of test patterns rapidly based on the simulation result, so that the evaluation accuracy and the processing speed of the pupil evaluation method can be improved.
The invention also discloses that the X-direction unbalance and the Y-direction unbalance corresponding to the pupil to be evaluated are obtained by calculation based on the edge position error, and the critical dimension CD of the symmetric line in the X direction is utilized X Critical dimension CD with symmetric line in Y-direction Y And calculating to obtain the ovality of the corresponding pupil to be evaluated. Based on the simulation processing method, the photoetching performance and the pupil can be associated, so that the photoetching performance of the corresponding pupil to be evaluated can be intuitively expressed based on the X-direction unbalance, the Y-direction unbalance and the ellipticity of the pupil to be evaluated.
In the present invention, root of Fangyu X RMS Degree of unbalance with X direction, root of square average Y RMS Degree of unbalance with Y direction, root of square average E RMS And the ellipticity is in a positive relation with the ellipticity. That is, the X-direction imbalance, Y-direction imbalance, and ellipticity of the pupil can be characterized by using the lithography performance, so that the accuracy of pupil evaluation can be improved.
Further, the simulation result matched with the unbalance degree in the X direction, the unbalance degree in the Y direction and the ellipticity is stored. Storing the relevant data may facilitate a quick output of the corresponding evaluation results to pupils having the same optical model without having to re-perform the simulation process of the test pattern.
The pupil evaluation system and the electronic device provided by the invention have the same beneficial effects as the pupil evaluation method, and are not described in detail herein.
[ description of the drawings ]
FIG. 1A is one of the energy distribution schematics of a pupil exhibiting D2 symmetry;
FIG. 1B is a second schematic view of the energy distribution of a pupil exhibiting D4 symmetry;
FIG. 2A is a schematic diagram of an energy distribution embodying X-direction imbalance of a pupil;
FIG. 2B is a schematic diagram of an energy distribution embodying Y-direction imbalance of a pupil;
FIG. 2C is a schematic representation of an energy distribution embodying pupil ellipticity;
FIG. 3A is a flowchart of a pupil evaluation method according to a first embodiment of the present invention;
FIG. 3B is a schematic diagram of a set of Y-direction test patterns provided by the present invention;
FIG. 3C is a schematic view of an X-direction test pattern set provided by the present invention;
FIG. 4A is a schematic view of the X-direction symmetry line enumerated in the present invention;
FIG. 4B is a schematic view of the Y-direction symmetry line enumerated in the present invention;
fig. 4C is a schematic diagram of the end-to-end distance C D of the symmetric line in the X-direction for one embodiment of the invention;
fig. 4D is a schematic diagram of the end-to-end distance C D of the symmetric line in the Y-direction for one embodiment of the invention;
FIG. 5 is a flowchart illustrating the specific steps in step S4 shown in FIG. 3A;
fig. 6 is a functional block diagram of a pupil evaluation system according to a second embodiment of the present invention.
Fig. 7 is a schematic diagram of a specific functional module of the analysis processing module shown in fig. 6.
Fig. 8 is a schematic functional block diagram of an electronic device according to a third embodiment of the present invention.
The attached drawings are used for identifying and describing:
20. a pupil evaluation system; 21. a graphics-providing module; 22. an optical model matching module; 23. a graph screening module; 24. an analysis processing module; 231. a comparison unit; 241. an X-direction imbalance degree calculation unit; 242. a Y-direction imbalance degree operation unit; 243. an ellipticity operation unit; 244. an evaluation unit;
30. an electronic device; 301. a storage device; 302. a processor; 801. a central processing unit; 802. read-only memory (RO M); 803. random Access Memory (RAM); 804. a bus; 805. an input/output (I/O) interface; 806. an input section; 807. an output section; 808. a storage section; 809. a communication section; 810. a driver; 811. removable media.
[ detailed description ] of the invention
For the purpose of making the technical solution and advantages of the present invention more apparent, the present invention will be further described in detail below with reference to the accompanying drawings and examples of implementation. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The pupil in lithography has some symmetry, and in some specific examples, as shown in fig. 1A and 1B, there are typically D2 symmetry and D4 symmetry.
In practical application, three important indexes of pupil evaluation are respectively: x-direction imbalance, Y-direction imbalance, ovality.
In FIGS. 2A-2C, an X-Y coordinate system is defined, as shown in FIG. 2A, corresponding to X on the left of the Y-axis - And on the right side of the Y axis corresponds to X + 。
Specifically, referring to fig. 2A, the X-direction imbalance may be further defined as formula (1):
wherein E (X) + ) Represents the sum of all energies in the positive X direction, E (X - ) Representing the sum of all energies in the negative X direction. As shown in fig. 2A. The physical quantity measures the imbalance of the pupil energy distribution along the X-direction. If the pupil is perfectly symmetric about the Y-axis, the X-direction imbalance is 0.
Continuing as shown in FIG. 2B, Y is above the X-axis + Y being below the X axis - . The Y-direction imbalance definition may be further defined as equation (2):
wherein E (Y) + ) Represents the sum of all energies in the positive direction of Y, E (Y - ) Representing the sum of all energies in the negative Y direction. As shown in fig. 2B. The above equation (2) can measure the unbalance of the energy distribution of the pupil along the Y direction, and thus can be further used to represent the Y-direction unbalance of the pupil. If the pupil is perfectly symmetrical about the X-axis, the corresponding Y-direction imbalance is 0.
Continuing as shown in fig. 2C, ellipticity defines:
wherein E (Y) represents all energy sums in the Y direction, and E (X) represents all energy sums in the X direction. As shown in fig. 2C. The above equation (3) measures the unbalance of the contrast in the X-direction and the Y-direction of the pupil, that is, the unbalance in the horizontal and vertical directions, reflecting the difference in the lateral and longitudinal directions, which is equivalent to the ellipticity. If the pupil is perfectly symmetrical rotated by 90 °, the value corresponding to the above formula (3) is 0.
Referring to fig. 3A, in order to quantitatively describe the effect of pupil asymmetry on lithographic performance in the present invention, a pupil evaluation method S10 is provided, which specifically includes the steps of:
step S1, a test pattern set (refer to FIG. 3B and FIG. 3C) is obtained; each test pattern may be symmetrical with respect to the X-direction or the Y-direction, and the test pattern may be used as a mask for photolithography for subsequent use.
Step S2, providing a pupil to be evaluated, and acquiring an optical model matched with the pupil;
step S3, performing simulation processing on all the test patterns in the step S1 by utilizing the optical model in the step S2 so as to select a preset number of key patterns meeting the requirement of photoetching performance;
and S4, analyzing and processing the key graph obtained in the step S3 to obtain a simulation result of the key graph, wherein the simulation result corresponds to the X-direction unbalance degree, the Y-direction unbalance degree and the ellipticity.
It should be noted that the sequence of the step S1 and the step S2 may be interchanged or may be performed simultaneously.
In the step S1, each test pattern has different parameters such as line width, interval between line segments, and period, and in some embodiments, a specific number of the test patterns may reach thousands, tens of thousands, or even hundreds of thousands of patterns in the set.
As shown in fig. 3B in particular, the test patterns may include ten types, which correspond to Y-direction test patterns: periodic lines, isolated lines, double lines, three lines, five lines, line ends, isolated line ends, line end-line end, T structure, and H structure.
As shown in fig. 3C in particular, the test patterns may include ten types, which correspond to X-direction test patterns: periodic lines, isolated lines, double lines, three lines, five lines, line ends, isolated line ends, line end-line end, T structure, and H structure.
In step S2 described above, the pupil is an important parameter in the lithography process. Different pupils have different optical models. Wherein, the lithography parameters of the optical model except the pupil can be selected to be common parameters or evaluated by using the existing model parameters.
In some specific embodiments, in creating the optical model, all other parameters except the pupil need to have symmetry rotated by any angle, i.e., U (1) symmetry. The symmetry of such an optical model is only used to evaluate pupil symmetry. The test pattern can be simulated with such an optical model, which will be used to detect and characterize the asymmetry of the pupil.
In the step S3, a part of test patterns meeting the requirement of the photolithography performance may be selected from all test patterns based on the Image Log Slope (ILS) of the test patterns and the size of the process window after the simulation processing, and further, a key pattern meeting the requirement of the customer may be selected from the test patterns meeting the requirement of the photolithography performance.
The above-mentioned requirements for photolithography performance may be used to determine image quality, specifically, the test patterns with larger image log slope and larger process window, and the specific numerical value may be determined based on the specific test pattern type, which is not limited herein.
The key patterns required by the user can be regarded as test patterns which are concerned by the user, and the user makes corresponding selections based on the photoetching performance requirement as a reference.
As shown in fig. 4A, in the above-described step S4, specifically, the simulation processing for the X-direction unbalance is to simulate the edge position error (EPE, edge Placement Error) having the X-direction symmetric line, and as shown in fig. 4A, if the pupil has the unbalance in the X-direction, the edge position error EPE (X + ) And an edge position error EPE (X) in the X negative direction (corresponding left side in fig. 4A) - ) Will not be equal in value. It can be seen that the edge position error EPE (X + ) Edge position error EPE (X) - ) Difference diff (X) = |epe (X) + )-EPE(X - ) I, the magnitude of the pupil imbalance in the X direction can be reflected.
Also, as shown in FIG. 4B, in the above-described step S4, the simulation process for the Y-direction imbalance is to simulate the edge position error with Y-direction symmetric line, as shown in FIG. 4B, if the pupilHaving non-uniformity in the Y-direction, then the edge position error EPE (Y) in the Y-direction (corresponding upper side in FIG. 4B) + ) And an edge position error EPE (Y) in the negative Y direction (the lower side in fig. 4A) - ) Will not be equal in value. It can be seen that the edge position error EPE (Y + ) Edge position error EPE (Y - ) Difference diff (Y) = |epe (Y) + )-EPE(Y - ) I, the magnitude of the pupil imbalance in the Y direction can be reflected.
For the ovality of the pupil, the CD is needed to simulate the difference between the critical dimensions CD (Critical Dimension) of the symmetric lines of the same critical pattern in the X direction and the Y direction x Representing critical dimensions of symmetric lines in the X-direction, using CD y The critical dimension of the symmetric line representing the Y-direction, i.e., the difference between the two, can be expressed as diff (E) = |cd x -CD y | a. The invention relates to a method for producing a fibre-reinforced plastic composite. The ellipticity of the pupil can be characterized based on the difference between the two.
As shown in fig. 4C and 4D, in the present embodiment, the critical dimension CD is as described above x And critical dimension C D Y corresponds to the line-to-line distance of the symmetric line in the X-direction and Y-direction. The examples presented herein are intended to be illustrative of the invention and are not intended to be limiting.
As shown in fig. 5, the step S4 may specifically include the following steps:
step S41, obtaining the edge position error EPE (X) of each key pattern selected in step S3 corresponding to the X positive direction + ) Edge position error EPE (X) - ) Difference diff (X) = |epe (X) + ))-EPE(X - ) I, obtaining the corresponding square root X based on the difference diff (X) operation of all the selected key graphs RMS The method comprises the steps of carrying out a first treatment on the surface of the Wherein X is RMS The larger the corresponding pupil the greater the X-direction imbalance. Root of concrete square RMS The calculation formula of (2) is as follows (4):
in the above formula (4), N represents the total number of selected key patterns, and N represents the code of a specific key pattern.
Step S42, obtaining the edge position error EPE (Y + ) Edge position error EPE (Y - ) Difference diff (Y) = |epe (Y) + )-EPE(Y - ) Computing the root of the difference diff (Y) of all the selected key patterns to obtain the root Y RMS The method comprises the steps of carrying out a first treatment on the surface of the Wherein Y is RMS The larger the corresponding pupil the greater the Y-direction imbalance. Root of concrete square Y RMS The calculation formula of (2) is as follows (5):
in the above formula (5), N represents the total number of selected key patterns, and N represents the code of a specific key pattern.
Step S43, obtaining the critical dimension CD of each critical pattern selected in step S3 corresponding to the symmetric line in the X direction X Critical dimension CD with symmetric line in Y-direction Y Difference diff (E) = |cd x –CD y Computing the root of the difference diff (E) of all the selected key patterns to obtain the root E RMS The method comprises the steps of carrying out a first treatment on the surface of the Wherein E is RMS The larger the corresponding pupil ellipticity value is. Root of concrete square RMS The calculation formula of (2) is as follows:
in the above formula (6), N represents the total number of selected key patterns, and N represents the code of a specific key pattern.
In some other embodiments of the present invention, the order of steps S41, S42 and S43 may be interchanged at will or may be performed simultaneously.
Step (a)S44, based on the obtained root X RMS Root of Fangzhong Y RMS Root of Fangzhong E RMS And correspondingly outputting the unbalance degree in the X direction and the unbalance degree in the Y direction of the pupil. In some preferred embodiments of the present invention, after step S4, the method further comprises:
and S5, storing the simulation results which are obtained in the step S4 and matched with the unbalance degree in the X direction, the unbalance degree in the Y direction and the ellipticity into a database table. Based on the simulation results obtained above, a way of calculating lithographic performance can be implemented to evaluate pupil asymmetry.
Referring to fig. 6, in a second embodiment of the present invention, a pupil evaluation system 20 is provided, the pupil evaluation system 20 includes:
a pattern providing module 21 for acquiring a test pattern set;
an optical model matching module 22, configured to provide a pupil to be evaluated, and acquire an optical model matched with the pupil;
the pattern screening module 23 is configured to perform simulation processing on all the test patterns by using the optical model, so as to select a preset number of key patterns meeting the requirements of lithography performance and preset requirements; and
And the analysis processing module 24 is used for analyzing and processing the obtained key graph to obtain a key graph simulation result, wherein the simulation result corresponds to the X-direction unbalanced degree, the Y-direction unbalanced degree and the ovality of the evaluation pupil.
As shown in fig. 6, in some preferred embodiments of the present invention, the image filtering module 23 further includes:
a comparing unit 231, configured to select a test pattern that partially meets the requirement of lithography performance from all test patterns based on the image log slope of the test pattern and the size of the process window; and selecting key patterns meeting the requirements of customers from the test patterns meeting the requirements of photoetching performance.
Referring to fig. 7, the analysis processing module 24 further includes:
an X-direction unbalanced degree operation unit 241 for obtaining the X positive direction corresponding to each selected key patternEdge position error EPE (X) + ) Edge position error EPE (X) - ) The difference diff (X) is calculated based on the difference diff (X) of all selected key patterns to obtain the corresponding square root X RMS ；
A Y-direction unbalanced degree operation unit 242 for obtaining the edge position error EPE (Y + ) Edge position error EPE (Y - ) The difference diff (Y) is calculated based on the difference diff (Y) of all selected key patterns to obtain the corresponding square root Y RMS The method comprises the steps of carrying out a first treatment on the surface of the And
An ellipticity computing unit 243 for obtaining a critical dimension CD of each selected critical pattern corresponding to a line symmetric in the X direction X Critical dimension CD with symmetric line in Y-direction Y Calculating the difference diff (E) of all selected key patterns to obtain the corresponding root of all selected key patterns RMS The method comprises the steps of carrying out a first treatment on the surface of the And
An evaluation unit 244 for obtaining root mean square X RMS Root of Fangzhong Y RMS Root of Fangzhong E RMS And evaluating the unbalance degree in the X direction and the unbalance degree in the Y direction of the pupil.
Referring to fig. 8, a third embodiment of the present invention provides an electronic device 300, which includes one or more processors 302;
a storage means 301 for storing one or more programs,
the one or more programs, when executed by the one or more processors 302, cause the one or more processors 302 to implement any of the steps of the model-based data processing method as provided by the first implementation.
A schematic diagram of a computer system 800 suitable for use in implementing a terminal device/server of an embodiment of the present invention is shown below with reference to fig. 8. The terminal device/server illustrated in fig. 8 is merely an example, and should not impose any limitation on the functionality and scope of use of the embodiments of the present application.
As shown in fig. 8, the computer system 800 includes a Central Processing Unit (CPU) 801 that can perform various appropriate actions and processes according to a program stored in a Read Only Memory (ROM) 802 or a program loaded from a storage section 808 into a Random Access Memory (RAM) 803. In the RAM 803, various programs and data required for the operation of the system 800 are also stored. The CPU 801, ROM 802, and RAM 803 are connected to each other by a bus 804. An input/output (I/O) interface 805 is also connected to the bus 804.
The following components are connected to the I/O interface 805: an input portion 806 including a keyboard, mouse, etc.; an output portion 807 including a display such as a Cathode Ray Tube (CRT), a Liquid Crystal Display (LCD), and a speaker; a storage section 808 including a hard disk or the like; and a communication section 809 including a network interface card such as a LAN card, a modem, or the like. The communication section 809 performs communication processing via a network such as the internet. The drive 810 is also connected to the I/O interface 805 as needed. A removable medium 811 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, or the like is mounted on the drive 810 as needed so that a computer program read out therefrom is mounted into the storage section 808 as needed.
The processes described above with reference to flowcharts may be implemented as computer software programs according to embodiments of the present disclosure. For example, embodiments of the present disclosure include a computer program product comprising a computer program embodied on a computer readable medium, the computer program comprising program code for performing the method shown in the flowcharts. In such an embodiment, the computer program may be downloaded and installed from a network via the communication section 809, and/or installed from the removable media 811. The above-described functions defined in the method of the present invention are performed when the computer program is executed by the central processing unit (C PU) 801. The computer readable medium according to the present invention may be a computer readable signal medium or a computer readable storage medium, or any combination of the two. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples of the computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (RO M), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-RO M), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing.
Computer program code for carrying out operations of the present application may be written in one or more programming languages, including an object oriented programming language such as J ava, S mal ltalk, C++ and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider).
The flowcharts and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of systems, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
The units involved in the embodiments of the present invention may be implemented in software or in hardware. The described units may also be provided in a processor, for example, described as: the processor comprises an input module, an error monitoring point placement module, an optimization variable generation module, an objective function generation module and an optimization calculation module. The names of the cells do not in any way constitute a limitation of the cells themselves, for example, the input module can also be described as "a design layout for inputting a mask to be optimized". As another aspect, the present invention also provides a computer-readable medium that may be contained in the apparatus described in the above embodiments; or may be present alone without being fitted into the device. The computer readable medium carries one or more programs which, when executed by the apparatus, cause the apparatus to: acquiring a test graph set; providing a pupil to be evaluated, and acquiring an optical model matched with the pupil; performing simulation processing on all the test patterns by using an optical model to select a preset number of key patterns meeting the requirements of photoetching performance and preset requirements; and analyzing the obtained key graph to obtain a simulation result of the key graph, wherein the simulation result corresponds to the X-direction unbalance, the Y-direction unbalance and the ellipticity of the evaluation pupil.
In the invention, in order to better verify the accuracy of the pupil evaluation method provided by the invention, the following verification steps of the effect of the specific pupil evaluation method are provided:
the key graphics selected are assumed to comprise the following types of feature graphics, and specific parameters and features thereof are as follows:
periodic lines: the width of the line is 40nm-100nm, and the step is 2nm; the line width is 100nm-200nm, and the step is 5nm. The period is 80nm-200nm, and the step is 4nm; the period is 200nm-400nm, and the step is 10nm; the period is 400nm-1000nm, and the step is 40nm.
Isolated lines: the width of the line is 40nm-100nm, and the step is 2nm; the line width is 100nm-200nm, and the step is 5nm.
Double lines: the width of the line is 40nm-100nm, and the step is 2nm; the line width is 100nm-200nm, and the step is 5nm.
Three lines: the width of the line is 40nm-100nm, and the step is 2nm; the line width is 100nm-200nm, and the step is 5nm.
Five lines: the width of the line is 40nm-100nm, and the step is 2nm;100nm-200nm, step by step 5nm.
Line end: the width of the line is 40nm-100nm, and the step is 2nm; the line width is 100nm-200nm, and the step is 5nm. The line end spacing is 40nm-100nm, and the step is 2nm;100nm-200nm, step by step 5nm. The period is 80nm-200nm, and the step is 4nm; the period is 200nm-400nm, and the step is 10nm; the period is 400nm-1000nm, and the step is 50nm.
Isolated line end: the width of the line is 40nm-100nm, and the step is 2nm;100nm-200nm, step by step 5nm. The line end spacing is 40nm-100nm, and the step is 2nm; the line-end spacing is 100nm-200nm, and the step is 5nm.
Line end-line end: the line width is 40nm-200nm, and the step is 5nm. The period is from 80nm to 400nm, and the step is 10nm; the width of the middle line is 40nm-200nm, and the step is 5nm. The line-to-line end distance is 40nm-200nm, with a step of 5nm.
T structure: the line width is 40nm-200nm, and the step is 5nm. The width of the middle line is from 40nm to 200nm, and the step is 5nm. The line-to-line end distance is 40nm-200nm, with a step of 5nm.
H structure: the line width is 40nm-200nm, and the step is 5nm. Wherein the inter-line spacing is kept equal to the line width.
Creating an optical model by using pupils to be evaluated from about 2 ten thousand test patterns which are selected and generated, performing simulation processing on the optical model and the about 2 ten thousand test patterns, and selecting some key patterns with better photoetching performance from the optical model and the about 2 ten thousand test patterns, wherein specific steps are described in the steps S1-S3 and are not repeated.
Repeating the steps S1-S3 to obtain five groups of unbalanced X directions of the pupils to be evaluatedDegree and X RMS And (3) a comparison result of the relation between the two. As shown in table 1:
TABLE 1X-direction imbalance of pupil to be evaluated and X RMS Relation table of (2)
Repeating the steps S1-S3 to obtain the Y-direction imbalance degree and Y of the other five groups of pupils to be evaluated RMS And (3) a comparison result of the relation between the two. As shown in table 2:
TABLE 2Y-direction imbalance of pupil to be evaluated and Y thereof RMS Relation table of (2)
As is apparent from tables 1 and 2, when the X-direction imbalance or Y-direction imbalance is reduced, X corresponding thereto RMS Or Y RMS And correspondingly decreases. The pupil evaluation method and the physical quantity inspected by the system thereof can accurately reflect the X-direction unbalance and the Y-direction unbalance of the pupil.
Further, repeating the steps S1-S3 to obtain the ellipticity and E of the five groups of pupils to be evaluated RMS And (3) a comparison result of the relation between the two. As shown in table 3:
TABLE 3 ovality of the pupils to be evaluated and E RMS Relation table of (2)
As can be seen from Table 3, for pupil 11, the ellipticity was reduced from 6.5% to 2.3%, which is a simulated E RMS Decreasing from 0.5nm to 0.2nm. This trend is also true for the other four groups of pupils. This illustrates that pupil ellipticity can be well characterized by lithographic performance. Pupil with high ellipticity E RMS The larger will be. For a perfectly symmetric pupil, such as adjusted pupil 5, its ellipticity is 0, E RMS And also 0.
Based on the comparison of the tables 1 to 3, the pupil evaluation method and the pupil evaluation system provided by the invention can reflect the pupil unbalance from the lithography simulation angle, and the physical quantity examined by the invention can accurately reflect the pupil unbalance and can intuitively give the reference value of the pupil influencing the lithography performance, thereby reducing errors caused by the lithography process.
Compared with the prior art, the pupil evaluation method and the system thereof provided by the invention have the following beneficial effects:
according to the pupil evaluation method and the pupil evaluation system, the key patterns meeting the expected requirements are obtained based on the generated test pattern set and the optical model corresponding to the pupil to be evaluated, and the relation among the X-direction imbalance, the Y-direction imbalance, the ellipticity value and the photoetching performance matched with the pupil to be evaluated can be established through simulation processing, so that visual understanding of the influence of the pupil parameters on the photoetching performance can be provided. In the invention, by acquiring the optical model matched with the pupil to be evaluated, a corresponding test pattern can be simulated aiming at the pupil to be evaluated, and the corresponding X-direction unbalanced degree, Y-direction unbalanced degree and ellipticity of the pupil to be evaluated can be obtained based on the test pattern obtained by screening.
Further, in the invention, the selected preset number of key patterns meeting the requirements of photoetching performance and preset requirements can be obtained based on the image log slope and the size of a process window, and when the test patterns subjected to simulation processing are screened, the test patterns with larger image log slope and larger process window are left. Further, in order to further improve the performance of the test patterns meeting the requirements of lithography, key patterns meeting the preset requirements are selected. Based on the screening step, a key area matched with the pupil to be evaluated can be selected from a large number of test patterns rapidly based on the simulation result, so that the evaluation accuracy and the processing speed of the pupil evaluation method can be improved.
The invention also discloses that the X-direction unbalance and the Y-direction unbalance corresponding to the pupil to be evaluated are obtained by calculation based on the edge position error, and the critical dimension CD of the symmetric line in the X direction is utilized X Critical dimension CD with symmetric line in Y-direction Y And calculating to obtain the ovality of the corresponding pupil to be evaluated. Based on the simulation processing method, the photoetching performance and the pupil can be associated, so that the photoetching performance of the corresponding pupil to be evaluated can be intuitively expressed based on the X-direction unbalance, the Y-direction unbalance and the ellipticity of the pupil to be evaluated.
In the present invention, root of Fangyu X RMS Degree of unbalance with X direction, root of square average Y RMS Degree of unbalance with Y direction, root of square average E RMS And the ellipticity is in a positive relation with the ellipticity. That is, the X-direction imbalance, Y-direction imbalance, and ellipticity of the pupil can be well characterized by the lithography performance, so that the accuracy of pupil evaluation can be improved.
Further, the simulation result matched with the unbalance degree in the X direction, the unbalance degree in the Y direction and the ellipticity is stored. Storing the relevant data may facilitate a quick output of the corresponding evaluation results to pupils having the same optical model without having to re-perform the simulation process of the test pattern.
The pupil evaluation system and the electronic device provided by the invention have the same beneficial effects as the pupil evaluation method, and are not described in detail herein.
The above description is only of the preferred embodiments of the present invention and is not intended to limit the invention, but any modifications, equivalents, improvements, etc. within the principles of the present invention should be included in the scope of the present invention.
Claims (8)
1. A pupil evaluation method, characterized in that: the pupil evaluation method comprises the following steps:
step S1, obtaining a test graph set; the test patterns are symmetrical relative to the X direction or the Y direction;
step S2, providing a pupil to be evaluated, and acquiring an optical model matched with the pupil;
step S3, performing optical simulation processing on all the test patterns in the step S1 by utilizing the optical model in the step S2, selecting part of test patterns meeting the requirement of photoetching performance from all the test patterns based on the image logarithmic slope of the test patterns and the size of a process window, and selecting key patterns meeting the preset requirement from the test patterns meeting the requirement of photoetching performance; and
Step S4, carrying out simulation processing on the key graph obtained in the step S3 to obtain a simulation result of the key graph,
the simulation result corresponds to the X-direction unbalance, the Y-direction unbalance and the ellipticity of the pupil to be evaluated;
obtaining the X-direction unbalanced degree and the Y-direction unbalanced degree corresponding to the pupil to be evaluated based on the edge position error operation,
critical dimension of symmetric line in X direction based on the critical patternCD X Critical dimension with symmetric line in Y-directionCD Y Calculating to obtain ellipticity of the pupil to be evaluated;CD X line-to-line distances that are symmetric lines in the X-direction;CD Y the line-to-line distance of the symmetric line in the Y direction;
alternatively, the sequence of steps S1 and S2 is interchanged or performed simultaneously.
2. A pupil evaluation method as claimed in claim 1, characterized in that: the step S4 specifically includes the following steps:
step S41, obtaining the edge position error of each key pattern selected in step S3 corresponding to the X positive directionEdge position error from the X negative direction +.>Difference (I) of->Based on the differences of all selected key patternsThe corresponding square root is obtained by operationX RMS ；
Step S42, obtaining the edge position error of each key pattern selected in step S3 corresponding to the Y positive directionEdge position error from Y negative direction +.>Difference (I) of->Based on the differences of all selected key patternsThe corresponding square root is obtained by operationY RMS The method comprises the steps of carrying out a first treatment on the surface of the And
Step S43, obtaining the critical dimension of each critical pattern selected in step S3 corresponding to the symmetric line in the X directionCD X Critical dimension with symmetric line in Y-directionCD Y Difference betweenCalculating the difference value of all selected key patternsTo obtain the root of the root corresponding to all the selected key patternsE RMS ；
Step S41, step S42 and step S43 are performed in any order or simultaneously.
3. A pupil evaluation method as claimed in claim 2, characterized in that: the pupil evaluation method further comprises the following steps:
in step S44 of the process, based on the obtained root of common ParisX RMS Root of FangjungenY RMS Root of FangjunE RMS And correspondingly outputting the unbalance degree in the X direction and the unbalance degree in the Y direction of the pupil.
4. A pupil evaluation method as claimed in claim 2, characterized in that: in the above step S4, the root of the FangjunX RMS Degree of imbalance with X direction, root of square averageY RMS Degree of imbalance with Y direction, root of square averageE RMS And the ellipticity is in a positive relation with the ellipticity.
5. A pupil evaluation method as claimed in claim 1, characterized in that: after step S4, further comprising:
and S5, storing simulation results which are obtained in the step S4 and matched with the unbalance degree in the X direction, the unbalance degree in the Y direction and the ellipticity.
6. A pupil evaluation system, characterized by: the pupil evaluation system includes:
the graph providing module is used for obtaining a test graph set; the test patterns are symmetrical relative to the X direction or the Y direction;
the optical model matching module is used for providing a pupil to be evaluated and acquiring an optical model matched with the pupil;
the pattern screening module is used for carrying out optical simulation processing on all the test patterns by utilizing the optical model, selecting part of test patterns meeting the requirement of photoetching performance from all the test patterns based on the image logarithmic slope of the test patterns and the size of the process window, and selecting key patterns meeting the preset requirement from the test patterns meeting the requirement of photoetching performance; and
The analysis processing module is used for carrying out simulation processing on the obtained key graph to obtain a key graph simulation result, and the simulation result corresponds to the X-direction unbalance, the Y-direction unbalance and the ellipticity of the evaluation pupil;
obtaining the X-direction unbalanced degree and the Y-direction unbalanced degree corresponding to the pupil to be evaluated based on the edge position error operation,
critical dimension of symmetric line in X direction based on the critical patternCD X Critical dimension with symmetric line in Y-directionCD Y Calculating to obtain ellipticity of the pupil to be evaluated,CD X line-to-line distances that are symmetric lines in the X-direction;CD Y line-to-line distances that are symmetric lines in the Y direction.
7. A pupil evaluation system as claimed in claim 6, characterized in that: the analysis processing module further comprises:
an X-direction unbalanced degree operation unit for obtaining the edge position error of each selected key graph corresponding to the X positive directionEdge position error from the X negative direction +.>Difference (I) of->Difference value based on all selected key patterns +.>The corresponding square root is obtained by operationX RMS ；
A Y-direction unbalanced degree operation unit for obtaining the edge position error of each selected key pattern corresponding to the Y positive directionEdge position error from Y negative direction +.>Difference (I) of->Difference value based on all selected key patterns +.>The corresponding square root is obtained by operationY RMS The method comprises the steps of carrying out a first treatment on the surface of the And
An ellipticity operation unit for obtaining the critical dimension of each selected critical pattern corresponding to the symmetric line in the X directionCD X Critical dimension with symmetric line in Y-directionCD Y Difference of the twoCalculating the difference +.>To obtain the root of the root corresponding to all the selected key patternsE RMS The method comprises the steps of carrying out a first treatment on the surface of the And
An evaluation unit, which is used for evaluating the data, root of sambucus for obtainingX RMS Root of FangjungenY RMS Root of FangjunE RMS And evaluating the X-direction unbalance degree, the Y-direction unbalance degree and the ellipticity of the pupil.
8. An electronic device, characterized in that: comprising one or more processors;
storage means for storing one or more programs,
the one or more programs, when executed by the one or more processors, cause the one or more processors to implement the pupil evaluation method of any of claims 1-5.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108153995A (en) * | 2018-01-19 | 2018-06-12 | 中国科学院微电子研究所 | Test pattern selection method and device and method and device for building photoetching model |
| CN109073998A (en) * | 2016-03-01 | 2018-12-21 | Asml荷兰有限公司 | Method and apparatus for determining the parameter of Patternized technique |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109073996A (en) * | 2016-03-01 | 2018-12-21 | Asml荷兰有限公司 | Method and apparatus for determining the parameter of Patternized technique |
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Non-Patent Citations (2)
| Title |
|---|
| 甘雨等.光刻机照明系统光瞳特性参数评估算法研究.网络出版地址：http://kns.cnki.net/kcms/detail/31.1339.TN.20181225.0647.026.html.2018,第1-11页. * |
| 郭立萍等.照明光瞳非对称性对光刻成像质量的影响.《光学学报》.2006,第26卷(第6期),第885-889页. * |
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