CN111609927B - Source and detection integrated terahertz test platform - Google Patents
Source and detection integrated terahertz test platform Download PDFInfo
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- CN111609927B CN111609927B CN202010295347.9A CN202010295347A CN111609927B CN 111609927 B CN111609927 B CN 111609927B CN 202010295347 A CN202010295347 A CN 202010295347A CN 111609927 B CN111609927 B CN 111609927B
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- 238000001514 detection method Methods 0.000 title claims abstract description 38
- 238000012360 testing method Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 8
- 238000007789 sealing Methods 0.000 claims abstract description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- 230000008054 signal transmission Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 5
- 230000002238 attenuated effect Effects 0.000 abstract description 2
- 230000010354 integration Effects 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 15
- 238000004891 communication Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 230000001427 coherent effect Effects 0.000 description 4
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012984 biological imaging Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- 239000000523 sample Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
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- H—ELECTRICITY
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- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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Abstract
The invention discloses a source and detection integrated terahertz test platform which is used for detecting terahertz signals on a chip. The terahertz test platform of source and detection integration includes: the signal generation module is used for generating a terahertz sine signal; the cavity module is used for sealing the signal generating module and the signal receiving module and transmitting the terahertz signals to ensure that the input and the output of the signals are not interfered; the silicon lens module is used for focusing the terahertz signal and realizing that the signal is attenuated to a smaller degree and reaches a signal receiving end; and the signal receiving module is used for receiving the terahertz sinusoidal signal. According to the terahertz test platform, a chip with a source and a detector is connected with a cavity through an extended PCB, so that the design of the terahertz test platform integrating the source and the detector is realized.
Description
Technical Field
The invention relates to the technical field of terahertz detection, in particular to a terahertz test platform integrating source detection and detection.
Background
The terahertz wave is an electromagnetic wave which is located between microwave and infrared and has the frequency within the range of 0.1-10 THz. Due to the characteristics of high spectral resolution, high safety, strong penetrability, low photon energy, high broadband and the like, the terahertz technology has wide application prospects in the fields of biological imaging, rapid detection of THz spectrum, high-speed communication, through-wall radar and the like.
In the development and utilization of terahertz wave bands, detecting terahertz signals plays a significant role. At present, the terahertz signal detection technology can be divided into two types, namely coherent detection technology and incoherent detection technology, in principle. The incoherent detection technology is a direct detection technology based on heat absorption, and can only detect the terahertz radiation intensity; coherent detection is performed by adopting a mode similar to terahertz pulse generation based on a coherent detection technology, wherein the coherent detection technology mainly comprises a terahertz time-domain spectroscopy (THz-TDS) technology and a heterodyne detection technology. The terahertz time-domain spectroscopy technology needs a separate electromagnetic pulse source, and is large in size and expensive.
Disclosure of Invention
The invention provides a terahertz test platform integrating source detection and detection, which is based on a heterodyne detection technology of solid-state electronics and realizes the miniaturization design of a terahertz detection platform.
In order to solve the problems, the invention provides a terahertz test platform integrating source detection and detection, which is used for detecting terahertz signals on a chip; the platform includes:
the signal generation module is used for generating a terahertz sinusoidal signal;
the cavity module is used for sealing the signal generating module and the signal receiving module and transmitting the terahertz signals to ensure that the input and the output of the signals are not interfered;
the silicon lens module is used for focusing terahertz signals and realizing the attenuation of a signal transmission process to a smaller extent;
and the signal receiving module is used for receiving the terahertz sinusoidal signal.
Further, the signal generation module comprises a terahertz signal source chip and a binding PCB: the terahertz signal source chip is used for generating terahertz signals, and terahertz sine waves are radiated forwards through the on-chip antenna to enter the cavity;
the terahertz signal source chip is bound on the binding PCB through a gold wire, and the gold wire binds a power PAD, a bias PAD and a ground PAD of the terahertz signal source chip on a bonding PAD of the binding PCB; the bonding pad of the binding PCB is connected with a peripheral circuit, and the terahertz signal source chip works by supplying power; the binding PCB is provided with two M3 threaded holes for connecting the cavity module.
Further, the silicon lens module is used for focusing the terahertz signal generated by the terahertz signal source chip and transmitting the terahertz signal to the terahertz detector chip, and the silicon lens module can focus signals from 0.1THz to 10 THz.
Further, the signal receiving module comprises a terahertz detector chip and a binding PCB: the terahertz detector chip is used for detecting terahertz signals and receiving terahertz sine waves emitted by the terahertz signal source chip through the on-chip antenna;
the terahertz detector chip is bound on the binding PCB through a gold wire, and the power PAD, the bias PAD, the ground PAD and the output PAD of the terahertz detector chip are bound on the binding PCB bonding PAD through the gold wire; the bonding pad of the binding PCB is connected with a peripheral circuit, and the terahertz signal source chip works by supplying power; the binding PCB is provided with two M3 threaded holes for connecting the cavity module.
Further, the terahertz signal received by the terahertz detector chip comprises at least one of the following items: the energy intensity of the terahertz signal and the directivity of the terahertz signal.
Furthermore, in the signal generating module and the signal receiving module, the terahertz signal source chip and the terahertz detector chip are integrated in the same chip, and the power PAD, the bias PAD, the ground PAD and the output PAD of the terahertz signal source chip and the terahertz detector chip are bound on the same binding PCB by the gold wire.
Further, the cavity module includes a connection unit and a cavity unit, the connection unit includes: the bottom of the cavity is provided with a rectangular groove which is formed by binding a PCB according to the size of the signal generating and receiving module, and the signal generating module and the signal receiving module are placed in the rectangular groove; a cylindrical groove is formed in the top of the cavity according to the size of the silicon lens module, and the silicon lens module is placed in the cylindrical groove; the cavity unit is positioned between the upper connecting unit and the lower connecting unit, and transmits terahertz signals to shield space clutter signal interference.
Further, the connection adhesive between the silicon lens module and the cavity module is back adhesive.
Due to the adoption of the technology, compared with the prior art, the invention has the following positive effects:
the terahertz test platform provided by the invention has the beneficial effects that the chip with the terahertz signal generation and the terahertz signal receiving is connected with the cavity through the extension PCB, the terahertz signal is transmitted in the cavity, the terahertz signal is transmitted to the terahertz signal receiving chip by the silicon lens for detection, and the whole test system realizes the terahertz test platform design integrating source and detection. The integrated terahertz test platform is more compact in the field of terahertz signal detection, is easy to realize miniaturization, can stably run at room temperature, and can be widely applied to the fields of biological nondestructive detection, medical imaging and the like.
Drawings
FIG. 1 is a structural block diagram of a source and detection integrated terahertz test platform of the invention;
FIG. 2 is a schematic structural diagram of a source and detection integrated terahertz test platform binding PCB in the invention;
FIG. 3 is a schematic diagram of a source and detection integrated terahertz test platform cavity of the present invention; (a) is a top view; (b) is a side view;
FIG. 4 is a schematic view of a source and probe integrated terahertz test platform silicon lens of the present invention; (a) is a top view; (b) is a side view;
FIG. 5 is a diagram illustrating an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be further noted that, for the convenience of description, only some of the structures associated with the present application are shown in the drawings, not all of them. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The source and detection integrated terahertz test platform provided by the embodiment of the invention can be used for terahertz communication, such as a receiving end in a terahertz communication system, and is used for receiving terahertz signals transmitted by a transmitting end, and determining the signal direction, the signal intensity and the like of the terahertz signals according to the received information, so that the alignment or focusing of an antenna and the transmitting end is adjusted. It should be noted that, terahertz communication is very sensitive to signal directivity, and based on point-to-point terahertz communication, a transmitting end and a receiving end antenna need to be aligned before communication, and then communication is performed.
The invention provides a terahertz test platform integrating source and detection, and particularly relates to fig. 1, wherein fig. 1 is a structural block diagram of the terahertz test platform integrating source and detection, and the terahertz test platform comprises
And the signal generating module 20 is used for generating a terahertz sinusoidal signal.
And the cavity module 21 is used for sealing the signal generating module and the signal receiving module and transmitting the terahertz signals, so that the input and output of the signals are not interfered.
And the silicon lens module 22 is used for focusing the terahertz signals and realizing small attenuation in the signal transmission process.
And the signal receiving module 23 is used for receiving the terahertz sinusoidal signal.
The signal generating module and the signal receiving module include a schematic diagram of a binding PCB structure in fig. 2, a terahertz signal source chip and a detector chip 17.
Furthermore, the terahertz signal source chip and the terahertz detector chip 17 are bound on the binding PCB through gold wires, the terahertz detector chip power PAD, the bias PAD, the ground PAD and the output PAD are bound on the binding PCB bonding PAD 16 through the gold wires, and the terahertz signal source chip and the detector chip share one binding PCB, so that the complexity of the design of the detection platform is reduced.
Further, the bonding pad 16 uniformly surrounds the bound PCB, and forms a fixed structure when the bound PCB is connected with a peripheral PCB circuit, so that measurement errors caused by shaking of the device are prevented.
Furthermore, the terahertz signal source chip and the detector chip share one binding PCB, the number of the binding PCB bonding pads is increased, and the stability of the structure is further increased when the binding PCB is connected with the peripheral PCB.
The cavity module is shown in fig. 3, 11 is a top view of the cavity module, 18 is a side view of the cavity module, structural parameters of the cavity are determined by simulation, simulation modeling can be obtained by software simulation such as HFSS and CST, and S21 values of the modeling simulation are mainly referred to ensure the lossless property of signal transmission.
Further, 12 is the cuboid space (be the cuboid groove) in the cavity, and signal generation module and signal receiving module settle in 12, the influence of environment when effectively shielding signal transmission receives.
Further, for accurately and stably connecting the signal generating module, the signal receiving module and the cavity module, a positioning technology and a fixing technology are used, 13 is a screw hole, and 15 is a positioning hole.
In the cavity module, a cylindrical groove is formed in the top of the cavity according to the size of the silicon lens module, and the silicon lens module is placed in the cylindrical groove, wherein the silicon lens module is shown in fig. 4, 14 is a top view of the silicon lens, 19 is a side view of the silicon lens, and the silicon lens can focus signals from 0.1THz to 10 THz.
Wherein the connection adhesive between the silicon lens module and the cavity module can be gum, the gum is thin and soft in texture, the adhesion degree of the gum is high, and the stability of the structure can be ensured.
FIG. 5 is a diagram illustrating an embodiment of the present invention.
In conclusion, the source and detection integrated terahertz test platform is used for detecting terahertz signals on a chip. The terahertz test platform of source and detection integration includes: the signal generation module is used for generating a terahertz sine signal; the cavity module is used for sealing the signal generating module and the signal receiving module and transmitting the terahertz signals to ensure that the input and the output of the signals are not interfered; the silicon lens module is used for focusing the terahertz signal and realizing that the signal is attenuated to a smaller degree and reaches a signal receiving end; and the signal receiving module is used for receiving the terahertz sine signal. According to the terahertz test platform, a chip with a source and a detector is connected with a cavity through an extended PCB, and the design of the terahertz test platform integrating the source and the detector is realized.
In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (7)
1. A terahertz test platform integrating source detection and detection is characterized in that the test platform is used for detecting terahertz signals on a chip; the platform includes:
the signal generation module is used for generating a terahertz sinusoidal signal; the signal generation module comprises a terahertz signal source chip and a binding PCB;
the cavity module is used for sealing the signal generating module and the signal receiving module and transmitting the terahertz signals to ensure that the input and the output of the signals are not interfered;
the silicon lens module is used for focusing terahertz signals and realizing the attenuation of a signal transmission process to a smaller extent;
the signal receiving module is used for receiving the terahertz sinusoidal signal and comprises a terahertz detector chip and a binding PCB;
the terahertz signal source chip and the terahertz detector chip are integrated in the same chip, and the power PAD, the bias PAD, the ground PAD and the output PAD of the terahertz signal source chip and the terahertz detector chip are bound on the same binding PCB by the gold wire.
2. The platform of claim 1, wherein the terahertz signal source chip is to be used for generating terahertz signals, and terahertz sine waves are positively radiated into the cavity through an on-chip antenna;
the terahertz signal source chip is bound on the binding PCB through a gold wire, and the gold wire binds a power PAD, a bias PAD and a ground PAD of the terahertz signal source chip on a binding PCB bonding PAD; the bonding pad of the binding PCB is connected with a peripheral circuit, and the terahertz signal source chip works by supplying power; the binding PCB is provided with two M3 threaded holes for connecting the cavity module.
3. The platform of claim 1, wherein the silicon lens module is used for focusing and transmitting the terahertz signal generated by the terahertz signal source chip to the terahertz detector chip, and the silicon lens module can focus signals of 0.1THz to 10 THz.
4. The platform of claim 1, wherein the terahertz detector chip is to be used for detecting terahertz signals, and terahertz sine waves emitted by a terahertz signal source chip are received through an on-chip antenna;
the terahertz detector chip is bound on the binding PCB through a gold wire, and the power PAD, the bias PAD, the ground PAD and the output PAD of the terahertz detector chip are bound on the binding PCB bonding PAD through the gold wire; the bonding pad of the binding PCB is connected with a peripheral circuit, and the terahertz signal source chip works by supplying power; the binding PCB is provided with two M3 threaded holes for connecting the cavity module.
5. The platform of claim 4, wherein the terahertz signals received by the terahertz detector chip comprise at least one of: the energy intensity of the terahertz signal and the directivity of the terahertz signal.
6. The platform of claim 1, wherein the cavity module comprises a connection unit and a cavity unit, the connection unit comprising: the bottom of the cavity is provided with a rectangular groove which is formed by binding a PCB according to the signal generating module and the signal receiving module, and the signal generating module and the signal receiving module are placed in the rectangular groove; a cylindrical groove is formed in the top of the cavity according to the size of the silicon lens module, and the silicon lens module is placed in the cylindrical groove; the cavity unit is positioned between the upper connecting unit and the lower connecting unit, and transmits terahertz signals to shield space clutter signal interference.
7. The platform of claim 6, wherein the bonding adhesive between the silicon lens module and the cavity module is a back adhesive.
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| CN112699319B (en) * | 2021-03-23 | 2021-06-29 | 上海迹寻科技有限公司 | Space clutter signal calibration method and device |
| CN113453336B (en) * | 2021-08-31 | 2022-01-25 | 广东省新一代通信与网络创新研究院 | Communication positioning method, base station and terminal equipment |
| CN113938365B (en) * | 2021-09-03 | 2022-12-20 | 北京邮电大学 | Energy limit detection method and device of THz communication and detection integrated system |
| CN114414040B (en) * | 2021-12-31 | 2023-10-13 | 北京无线电计量测试研究所 | Compact terahertz generation and detection device |
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| CN207515907U (en) * | 2017-06-28 | 2018-06-19 | 东南大学 | Terahertz transceiving chip, Terahertz transceiver and its imaging detection system |
| CN110907390A (en) * | 2019-12-26 | 2020-03-24 | 青岛青源峰达太赫兹科技有限公司 | Integrated lens for terahertz detection |
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| CN207515907U (en) * | 2017-06-28 | 2018-06-19 | 东南大学 | Terahertz transceiving chip, Terahertz transceiver and its imaging detection system |
| CN110907390A (en) * | 2019-12-26 | 2020-03-24 | 青岛青源峰达太赫兹科技有限公司 | Integrated lens for terahertz detection |
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| 《基于硅透镜集成的高灵敏度室温太赫兹探测器》;孙云飞;《微纳电子技术》;20171130;第729-733页 * |
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