CN111599747A - Method for preparing through hole in graphene radio frequency MMIC chip on sapphire - Google Patents
Method for preparing through hole in graphene radio frequency MMIC chip on sapphire Download PDFInfo
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- CN111599747A CN111599747A CN202010386841.6A CN202010386841A CN111599747A CN 111599747 A CN111599747 A CN 111599747A CN 202010386841 A CN202010386841 A CN 202010386841A CN 111599747 A CN111599747 A CN 111599747A
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- sapphire substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
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Abstract
The invention is suitable for the technical field of semiconductor devices, and provides a method for preparing a through hole on a graphene radio frequency MMIC chip on sapphire, which comprises the following steps: preparing an etching stop layer on the front surface of a sapphire substrate, and punching the sapphire substrate through at a preset position on the back surface of the sapphire substrate by adopting laser with a preset wavelength to prepare a through hole; and completing a front process on the etching stop layer of the sapphire substrate after the through hole is prepared to obtain an MMIC chip, removing the etching stop layer corresponding to the through hole on the MMIC chip, and preparing the through hole.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for preparing a through hole in a graphene radio frequency MMIC chip on sapphire.
Background
The dielectric constant of the sapphire substrate is very high, so that the graphene prepared on the sapphire can be applied to the development of a high-performance Monolithic Microwave Integrated Circuit (MMIC) chip. However, sapphire is very difficult to machine, especially for the preparation process of through holes. In the prior art, when a through hole is prepared, a thicker metal barrier layer is electroplated on the back surface of a chip after a front surface process of the chip is completed, and then sapphire at the through hole is etched by adopting a dry etching process to obtain the through hole. However, when the through hole is prepared in the prior art, a thicker barrier layer needs to be electroplated, the operation is more complicated, and the dry etching is easy to cause additional damage to the chip.
Disclosure of Invention
In view of this, the embodiment of the invention provides a method for preparing a through hole on a graphene radio frequency MMIC chip on sapphire, and aims to solve the problems that a thicker barrier layer needs to be electroplated, the operation is complex, and the chip is easily damaged additionally by dry etching in the prior art when the through hole is prepared.
In order to achieve the above object, a first aspect of the embodiments of the present invention provides a method for preparing a through hole on a graphene radio frequency MMIC chip on sapphire, including:
preparing an etching stop layer on the front surface of the sapphire substrate, wherein the etching stop layer is made of an etching stop material which does not absorb laser with a preset wavelength;
punching through the sapphire substrate at a preset position on the back surface of the sapphire substrate by adopting laser with a preset wavelength, and preparing a through hole;
and finishing a front process on the etching stop layer of the sapphire substrate after the through hole is prepared to obtain an MMIC chip, and removing the etching stop layer corresponding to the through hole on the MMIC chip to obtain the through hole.
In an embodiment, after the obtaining the through hole, the method further includes:
and electroplating metal on the hole wall of the through hole and the back surface of the sapphire substrate to realize through hole grounding.
In one embodiment, the electroplating metal on the wall of the through hole and the back side of the sapphire substrate comprises:
sputtering a layer of first metal on the hole wall of the through hole and the back surface of the sapphire substrate;
and placing the MMIC chip sputtered with the first metal into electroplating solution, and electroplating second metal on the hole wall of the through hole of the MMIC chip and the back surface of the sapphire substrate.
In one embodiment, the first metal is titanium or copper.
In one embodiment, the plating solution is a solution that protects cations of the second metal.
In one embodiment, the second metal is copper or gold.
In one embodiment, the thickness of the metal plated on the walls of the through holes and on the back side of the sapphire substrate is 20 microns.
In one embodiment, the etch stop material is silicon dioxide or tungsten.
In one embodiment, the laser has a wavelength of 355 nm.
In an embodiment, the removing the etching stopper layer corresponding to the through hole includes:
and removing the etching stopping layer corresponding to the through hole by adopting a wet etching mode.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: compared with the prior art, the method has the advantages that the etching stop layer is prepared on the front surface of the sapphire substrate, the sapphire substrate is punched through at the preset position of the back surface of the sapphire substrate by adopting laser with the preset wavelength, and the through hole is prepared; and completing a front process on the etching stop layer of the sapphire substrate after the through hole is prepared to obtain an MMIC chip, removing the etching stop layer corresponding to the through hole on the MMIC chip, and preparing the through hole.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart of an implementation of a method for manufacturing a through hole on a graphene radio frequency MMIC chip on sapphire according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a step of preparing a through hole on a graphene-on-sapphire radio frequency MMIC chip according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a method for manufacturing a through hole on a graphene-on-sapphire radio frequency MMIC chip according to another embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Fig. 1 is a schematic flow chart of an implementation of a method for manufacturing a through hole on a graphene radio frequency MMIC chip on sapphire according to an embodiment of the present invention, which is described in detail below.
Optionally, in the present application, the front surface process is prepared on the sapphire substrate prior to the through hole process.
Alternatively, the etch stop material may be a material that does not absorb laser light of a particular wavelength, for example, the etch stop material may be silicon dioxide, or the etch stop material may be a metal with a higher melting point, for example, tungsten.
Alternatively, as shown in fig. 2, the etch stop layer may have a thickness of 200 nm.
And 102, drilling through the sapphire substrate at a preset position on the back surface of the sapphire substrate by using laser with a preset wavelength, and preparing a through hole.
Optionally, in this embodiment, the wavelength of the laser may be 355 nm, and the etch-stop material used for the etch-stop layer does not absorb the laser and is therefore not damaged. As shown in fig. 2, the sapphire substrate is etched by using a laser emitting laser with a wavelength of 355 nm, and etching is stopped until the etch stop layer, so that a through hole can be punched in the sapphire substrate by using a laser with a wavelength of 355 nm.
Alternatively, in this step, the via hole pattern may be first transferred to the back surface of the sapphire substrate, and then the via holes may be prepared one by one in accordance with the via hole pattern.
Optionally, the front surface process is a process completed on the front surface of the sapphire substrate, and in this embodiment, the front surface process is prepared on the etch stop layer, where the front surface process may include graphene transfer or growth, mesa isolation, source-drain metal deposition, high-temperature rapid thermal annealing, electron beam lithography, capacitance medium deposition, air bridge preparation, transmission line electroplating process, resistance preparation, and the like, and in this embodiment, specific process types and steps of the front surface process are not limited. And after the front process is finished, obtaining an MMIC chip, and continuously preparing a through hole on the MMIC chip.
Optionally, the etching stop layer corresponding to the through hole is removed by wet etching, that is, wet etching is performed in the through hole on the back surface of the sapphire substrate to remove the etching stop layer, but the dielectric layer or the device and the like prepared by other front surface processes on the etching stop layer are not damaged, as shown in fig. 2.
As shown in fig. 3, after step 103, the method further includes:
and 104, electroplating metal on the hole wall of the through hole and the back surface of the sapphire substrate to realize through hole grounding.
Alternatively, to achieve via grounding, metal plating within the vias is required.
Optionally, in this step, electroplating metal on the hole wall of the through hole and the back side of the sapphire substrate may include:
sputtering a layer of first metal on the hole wall of the through hole and the back surface of the sapphire substrate;
and placing the MMIC chip sputtered with the first metal into electroplating solution, and electroplating second metal on the hole wall of the through hole of the MMIC chip and the back surface of the sapphire substrate.
Alternatively, the first metal may be titanium or copper.
Optionally, the plating solution is a solution that protects the cations of the second metal.
Alternatively, the second metal may be a stable metal, for example the second metal may be copper or gold.
Optionally, the thickness of the metal plated on the hole wall of the through hole and the back surface of the sapphire substrate may be 20 micrometers.
According to the method for preparing the through hole in the graphene radio frequency MMIC chip on the sapphire, the etching stop layer is prepared on the front surface of the sapphire substrate, and the sapphire substrate is punched through at the preset position on the back surface of the sapphire substrate by adopting laser with the preset wavelength to prepare the through hole; and completing a front process on the etching stop layer of the sapphire substrate after the through hole is prepared to obtain an MMIC chip, removing the etching stop layer corresponding to the through hole on the MMIC chip, and preparing the through hole.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A method for preparing a through hole in a graphene radio frequency MMIC chip on sapphire is characterized by comprising the following steps:
preparing an etching stop layer on the front surface of the sapphire substrate, wherein the etching stop layer is made of an etching stop material which does not absorb laser with a preset wavelength;
punching through the sapphire substrate at a preset position on the back surface of the sapphire substrate by adopting laser with a preset wavelength, and preparing a through hole;
and finishing a front process on the etching stop layer of the sapphire substrate after the through hole is prepared to obtain an MMIC chip, and removing the etching stop layer corresponding to the through hole on the MMIC chip to obtain the through hole.
2. The method for preparing the through hole on the sapphire-based graphene radio frequency MMIC chip as claimed in claim 1, further comprising, after said obtaining the through hole:
and electroplating metal on the hole wall of the through hole and the back surface of the sapphire substrate to realize through hole grounding.
3. The method of claim 2, wherein the step of plating metal on the walls of the through holes and the back side of the sapphire substrate comprises:
sputtering a layer of first metal on the hole wall of the through hole and the back surface of the sapphire substrate;
and placing the MMIC chip sputtered with the first metal into electroplating solution, and electroplating second metal on the hole wall of the through hole of the MMIC chip and the back surface of the sapphire substrate.
4. The method of claim 3, wherein the first metal is titanium or copper.
5. The method of claim 3, wherein the plating solution is a solution that protects cations of the second metal.
6. The method of claim 3, wherein the second metal is copper or gold.
7. The method for preparing the through holes on the graphene-on-sapphire radio frequency MMIC chip according to any one of claims 2 to 6, wherein the thickness of the metal plated on the wall of the through hole and the back surface of the sapphire substrate is 20 microns.
8. The method of claim 1, wherein the etch stop material is silicon dioxide or tungsten.
9. The method of claim 1, wherein the through holes are formed in the sapphire graphene radio frequency MMIC chip,
the wavelength of the laser is 355 nm.
10. The method of claim 1, wherein the removing the etch stop layer corresponding to the via comprises:
and removing the etching stopping layer corresponding to the through hole by adopting a wet etching mode.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010386841.6A CN111599747B (en) | 2020-05-09 | 2020-05-09 | Preparation method of through hole on graphene radio frequency MMIC chip on sapphire |
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| CN202010386841.6A CN111599747B (en) | 2020-05-09 | 2020-05-09 | Preparation method of through hole on graphene radio frequency MMIC chip on sapphire |
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| CN111599747B CN111599747B (en) | 2023-09-26 |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003069176A (en) * | 2001-08-28 | 2003-03-07 | Kyocera Corp | Sapphire substrate and its manufacturing method as well as electronic device using the same and its manufacturing method |
| WO2005057745A1 (en) * | 2003-12-12 | 2005-06-23 | Itswell Co. Ltd. | Gan-based vertical electrode laser diode utilizing the technique of sapphire etching and manufacturing method of the same. |
| US20060068515A1 (en) * | 2004-09-30 | 2006-03-30 | Jinmin Li | Method for manufacturing a GaN based LED of a back hole structure |
| US20100244082A1 (en) * | 2009-03-31 | 2010-09-30 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Quasi-vertical light emitting diode |
| CN104868021A (en) * | 2015-03-30 | 2015-08-26 | 映瑞光电科技(上海)有限公司 | Flip led chip and manufacturing method thereof |
| CN106098547A (en) * | 2016-06-20 | 2016-11-09 | 中山德华芯片技术有限公司 | Use the method that electrochemical process makes GaAs MMIC backside through vias |
| US9836699B1 (en) * | 2015-04-27 | 2017-12-05 | Rigetti & Co. | Microwave integrated quantum circuits with interposer |
| CN107464777A (en) * | 2016-06-02 | 2017-12-12 | 苏州能讯高能半导体有限公司 | Semiconductor crystal wafer and its manufacture method |
| CN109103316A (en) * | 2018-09-03 | 2018-12-28 | 东莞中之光电股份有限公司 | A kind of LED flip chip and its manufacturing method |
-
2020
- 2020-05-09 CN CN202010386841.6A patent/CN111599747B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003069176A (en) * | 2001-08-28 | 2003-03-07 | Kyocera Corp | Sapphire substrate and its manufacturing method as well as electronic device using the same and its manufacturing method |
| WO2005057745A1 (en) * | 2003-12-12 | 2005-06-23 | Itswell Co. Ltd. | Gan-based vertical electrode laser diode utilizing the technique of sapphire etching and manufacturing method of the same. |
| US20060068515A1 (en) * | 2004-09-30 | 2006-03-30 | Jinmin Li | Method for manufacturing a GaN based LED of a back hole structure |
| US20100244082A1 (en) * | 2009-03-31 | 2010-09-30 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Quasi-vertical light emitting diode |
| CN104868021A (en) * | 2015-03-30 | 2015-08-26 | 映瑞光电科技(上海)有限公司 | Flip led chip and manufacturing method thereof |
| US9836699B1 (en) * | 2015-04-27 | 2017-12-05 | Rigetti & Co. | Microwave integrated quantum circuits with interposer |
| CN107464777A (en) * | 2016-06-02 | 2017-12-12 | 苏州能讯高能半导体有限公司 | Semiconductor crystal wafer and its manufacture method |
| CN106098547A (en) * | 2016-06-20 | 2016-11-09 | 中山德华芯片技术有限公司 | Use the method that electrochemical process makes GaAs MMIC backside through vias |
| CN109103316A (en) * | 2018-09-03 | 2018-12-28 | 东莞中之光电股份有限公司 | A kind of LED flip chip and its manufacturing method |
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