CN111596340A

CN111596340A - Preparation method of high-counting-rate multi-air-gap resistance plate chamber detector

Info

Publication number: CN111596340A
Application number: CN202010594354.9A
Authority: CN
Inventors: 周意; 王旭; 孙勇杰; 尚伦霖; 张广安; 鲁志斌; 刘建北; 张志永; 邵明
Original assignee: University of Science and Technology of China USTC
Current assignee: University of Science and Technology of China USTC
Priority date: 2020-06-24
Filing date: 2020-06-24
Publication date: 2020-08-28
Anticipated expiration: 2040-06-24
Also published as: CN111596340B

Abstract

The invention provides a preparation method of a high-counting-rate multi-air-gap resistance plate chamber detector, which comprises the following steps: step S1: pretreating a glass sample; step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass; and step S3: a multi-air-gap resistance plate chamber structure is prepared based on DLC resistive glass, and then the preparation of a high-counting-rate multi-air-gap resistance plate chamber detector is completed. The multi-air-gap resistance plate chamber detector prepared by the preparation method can ensure that charges can not pass through glass for neutralization any more, but can be neutralized at a higher speed along the DLC surface with relatively low equivalent resistance, so that the counting rate capability of the detector is effectively improved.

Description

Preparation method of high-counting-rate multi-air-gap resistance plate chamber detector

Technical Field

The disclosure relates to the technical field of particle detectors, in particular to a preparation method of a high-counting-rate multi-air-gap resistance plate chamber detector.

Background

In current large-scale nuclear and particle physics experiments, the time of flight and the position of the particle are very important physical parameters. Time-of-flight measurement is a very important and common means of performing discrimination of charged particles in the final state. The high-energy end-state particles generated by collision fly over a limited distance at a high speed, and a flight time detector is required to have very good time resolution capability to distinguish the difference in speed between different particles, and the difference is combined with momentum measurement, so that particle identification is realized. An accurate time measurement is also typically required for triggering in the experiment, which can be used to effectively suppress background counts. Multi-gap resistive Plate Chambers (MRPCs) have been adopted by several international time-of-flight detectors of large-scale high-energy particle physics spectrometers, such as the RHIC/STAR/TOF detector of the national laboratory in bruke hei, the LHC/alic/TOF detector of the european nuclear center, etc., because of their low cost per channel (about 1/10 for the conventional scintillator + photomultiplier based solution), good time resolution (up to 50ps or less), high detection efficiency (close to 100%) for the smallest ionized particles, and the like. MRPC works stably and has excellent performance in the actual operation of a TOF system, greatly improves the particle identification capability of a spectrometer, and obtains a plurality of new physical achievements, such as discovery of anti-tritium nuclei and anti-helium-4 nuclei and the like.

MRPC is a gas detector operating in avalanche mode, originally proposed by the ALICE TOF experimental group of the european nuclear center in the mid-90 s of the last century. The structure and the basic working principle are shown in figure 1: a series of glass resistance plates with equal intervals form a plurality of uniform air gaps with the diameter of 200-300 mu m, and under the condition of proper working gas and external electric field, charged particles passing through the detector generate primary ionization and avalanche multiplication in the gas, so that an induction signal is generated on the outer layer of a reading electrode. Because the single air gap of the MRPC is narrow, the electric field intensity is high, and the development of avalanche is limited in a short range, the time sloshing caused by the uncertainty of the original primary ionization position is reduced, and the time resolution is effectively improved. Meanwhile, due to the semi-insulating property of the resistance plates, the resistance plates are transparent to the process of generating the sensing signals by the avalanches, and the sensing signals obtained on the reading electrodes are the sum of the avalanches in the air gaps, so that the MRPC has high detection efficiency.

However, MRPC detectors, although having a high time resolution, can only operate at low count rates (hundreds of Hz/cm)²Level) environment, when the counting rate exceeds 1kHz/cm²When the detector is used, a relatively obvious current begins to appear on the resistive plate (glass), so that obvious partial pressure is generated, an equivalent electric field in an avalanche region of the detector is reduced, and the effective gain of the gas of the detector is reduced. When the counting rate continues to become higher, the detector cannot form an effective output signal because the gain is too small to work normally, and fig. 2 shows the change of the detection efficiency and time resolution of a 6-air-gap MRPC using ordinary soda-lime glass along with the counting rate. With the continuous improvement of energy and brightness of colliders, new generation nuclear and particle physical experiments also put high requirements on the counting rate capability of detectors. For example, FAIR-CBM experiments in Germany and Solenoid Large Intensity Device (SoLID) experiments in JLAb, USA have proposed a counting rate of 10kHz/cm²～25kHz/cm²The time resolution of TOF is better than 80ps requirement.

Attempts have been made to increase the count rate capability of MRPC detectors in order to continue their function in new generation nuclear and particle physics experiments. At present, the subject group at home and abroad uses specially manufactured low-resistance glass as the inner glass electrode of the detector. Bulk resistivity compared to ordinary float glass (10)¹²Ω·cm～10¹³Omega cm) of such a low-resistance glassThe resistivity can reach 10¹⁰Ω·cm～10¹¹Omega cm, the use of the low-resistance glass can improve the counting rate capability of the MRPC detector to 20kHz/cm²Left and right. However, the above special glass with low resistivity mainly has three disadvantages, the first is that the whole process is complex, the manufacturing cost is high, the thickness of the glass when leaving the factory is very thick (more than 0.7mm), the surface roughness is also poor, the manufacturing requirement of the MRPC detector cannot be met, and the subsequent grinding and polishing treatment needs to be performed on the glass, so that the complexity and the cost of the whole manufacturing process are greatly increased. Secondly, the bulk resistivity of the low-resistance glass has great relevance to raw materials and a manufacturing process, when new application needs the new bulk resistivity of the glass, the low-resistance glass needs to be researched and developed again, and suitable raw materials and a manufacturing process are determined, so that the research and development difficulty and the cost of the high-counting-rate MRPC detector can be increased. Thirdly, even after subsequent grinding and polishing, the surface flatness of the low-resistance glass finally used for manufacturing the MRPC detector is still far from that of the common float glass, so that the detector has higher dark current and noise level when in operation. Therefore, how to overcome the above disadvantages and further effectively improve the counting rate capability of the MRPC detector has become a research hotspot in the field of current gas detectors.

BRIEF SUMMARY OF THE PRESENT DISCLOSURE

Technical problem to be solved

Based on the above problems, the present disclosure provides a method for manufacturing a high counting rate (counting rate higher than 10kHz/cm2) multi-gap resistance plate chamber detector, so as to alleviate the technical problems in the prior art that the manufacturing process of the glass electrode of the detector is complex, the cost is high, the body resistance needs to be re-developed and manufactured when changing, the dark current and the noise are large, and the counting capability of the detector cannot be effectively improved.

(II) technical scheme

The invention provides a preparation method of a high-counting-rate multi-air-gap resistance plate chamber detector, which comprises the following steps:

step S1: pretreating a glass sample;

step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass; and

step S3: a multi-air-gap resistance plate chamber structure is prepared based on DLC resistive glass, and then the preparation of a high-counting-rate multi-air-gap resistance plate chamber detector is completed.

In the embodiment of the present disclosure, step S1 includes:

substep S11: punching a plurality of through holes on a glass sample; and

substep S12: and cleaning the punched glass sample.

In an embodiment of the present disclosure, the step S2 includes:

substep S21: sputtering and cleaning the surface of the high-purity graphite target;

substep S22: sputtering and depositing a DLC film on one surface of the glass;

substep S23: re-loading the sample after sampling;

substep S24: depositing a DLC resistive film on the other surface of the glass sample;

substep S25: sampling and testing are performed.

In an embodiment of the present disclosure, the step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

substep S32: preparing a bottom printed circuit board structure and a bottom glass electrode structure;

substep S33: preparing a multi-air-gap DLC resistive plate structure on a glass electrode structure;

substep S34: and (4) mounting a top printed circuit board structure and a top glass electrode structure to finish the preparation of the high counting rate multi-air gap resistance board chamber detector.

In an embodiment of the present disclosure, the sub-step S32 includes:

substep S321: nylon screws are arranged on two sides of the bottom printed circuit board, and a honeycomb plate is adhered on the outer surface of the circuit board; and

substep S322: and arranging a Mylar insulating film on the inner surface of the bottom printed circuit board, exposing the high-voltage electrode, arranging a carbon film on the surface of the high-voltage electrode, and mounting a glass electrode to form a bottom glass electrode structure.

In an embodiment of the present disclosure, the sub-step S33 includes:

substep S331: nylon threads are wound on the glass electrode by utilizing nylon screws on two sides of the bottom printed circuit board to form a first layer of nylon wire net; and

substep S332: and placing a first piece of DLC resistive glass on the first layer of nylon wire net to form a first air gap, sequentially winding a plurality of layers of nylon wire nets by using the same method, and placing a plurality of pieces of DLC resistive glass to form a plurality of air gaps to form a multi-air-gap resistor plate structure.

In the embodiment of the disclosure, the diameter of the through hole is 0.2 mm-0.25 mm, and the distance between the adjacent through holes is 3 cm-10 cm.

In the embodiment of the disclosure, the diameter of the nylon wire ranges from 0.23mm to 0.3mm, and the diameter of the nylon wire is larger than that of the through hole on the DLC resistive glass.

In the disclosed embodiment, the nylon wire is guaranteed to just cover the through hole on the DLC resistive glass.

In the disclosed embodiment, the Mylar insulating film has a thickness in a range of 0.75mm to 1.5 mm.

(III) advantageous effects

According to the technical scheme, the preparation method of the high-counting-rate multi-air-gap resistance plate chamber detector has at least one or part of the following beneficial effects:

(1) the DLC resistive film has relatively low resistance value and higher charge neutralization speed;

(2) a DLC resistive film is deposited in the through holes added on the glass to accelerate the charge neutralization speed;

(3) the surface resistivity of the DLC film can be flexibly adjusted to meet different application requirements;

(4) the manufacturing difficulty and cost of the high counting rate MRPC detector are reduced;

(5) effectively expanding the application range of the MRPC detector.

Drawings

Fig. 1 is a schematic diagram of the structure and operation principle of an MRPC gas detector in the prior art.

Fig. 2 shows the detection efficiency and time resolution as a function of count rate for a 6 airgap MRPC using ordinary soda-lime glass.

Fig. 3 is a schematic flow chart of a method for manufacturing a high count rate multi-gap resistive plate chamber detector according to an embodiment of the present disclosure.

Fig. 4 is a schematic structural diagram of a glass sample after punching according to an embodiment of the disclosure.

FIG. 5 is a schematic diagram of the composition and principle of a magnetron sputtering device for preparing DLC resistive glass according to an embodiment of the present disclosure.

FIG. 6 is a schematic cross-sectional structure view of a DLC resistive glass prepared according to an embodiment of the present disclosure.

FIG. 7 is a schematic cross-sectional view of a high count rate multi-gap resistive plate chamber detector fabricated according to an embodiment of the present disclosure.

Detailed Description

The invention provides a preparation method of a high counting rate multi-air gap resistance plate chamber detector, which comprises the steps of punching a small through hole on common glass by a mechanical punching or laser punching technology, depositing a Diamond-like Carbon-based film (DLC) with surface resistivity lower than that of the glass by several orders of magnitude on the surface and in the hole of the common glass by a magnetron sputtering method, and changing the electrical characteristics of the surface of the glass.

For the purpose of promoting a better understanding of the objects, aspects and advantages of the present disclosure, reference is made to the following detailed description taken in conjunction with the accompanying drawings.

In an embodiment of the present disclosure, a method for manufacturing a high counting rate multi-gap resistance plate chamber detector is provided, which is shown in fig. 3 to 7, and includes:

step S1: pretreating a glass sample;

step S1 includes:

substep S11: punching a plurality of through holes on a glass sample;

the method comprises the steps of using common float glass, wherein the thickness of the glass is 0.4-0.6 mm, punching through holes with the diameter of 0.2-0.25 mm on a glass sample in a mechanical drilling or laser drilling mode, and enabling the distance between every two adjacent holes to be 3-10 cm.

In the disclosed embodiment, the size of the glass is 12cm × 20cm, the thickness is 0.4mm, 2 × 4 through holes with the diameter of 0.2mm are punched on the surface of the glass by using a laser punching technology, and the hole distance is 4 cm. The schematic diagram is shown in FIG. 4

Substep S12: and cleaning the punched glass sample.

And ultrasonically cleaning the punched glass sample by using acetone, and then cleaning by using alcohol to keep the surface of the glass sample dry and clean.

In the embodiment of the disclosure, the glass after the hole punching is put into anhydrous acetone, ultrasonically cleaned for 10 minutes, taken out and ultrasonically cleaned for 5 minutes in anhydrous ethanol, taken out and then wiped to dry the surface of the sample by using a dust-free cloth dipped with the anhydrous ethanol, and the surface of the glass is kept dry and clean.

Step S2: preparing DLC resistive films on the surface and in the holes of the pretreated glass sample to finish the preparation of the DLC resistive glass;

and depositing DLC resistive films with appropriate surface resistivity on the upper and lower surfaces of the pretreated glass substrate, plating DLC resistive films in the holes, and connecting the DLC resistive films on the upper and lower surfaces. And the surface resistivity of the diamond-like carbon-based film can be adjusted by changing the process parameters in the magnetron sputtering deposition process.

In the embodiment of the disclosure, the surface resistivity range of the DLC resistive film is 1G omega/□ -200G omega/□.

In the disclosed embodiment, the DLC resistive film has a thickness in the range of 30nm to 120 nm.

The step S2 includes:

starting a vacuum pump to vacuumize the coating cavity until the vacuum degree is lower than 5 × 10^-5And mbar, starting an edited target washing program to start sputtering and cleaning the surface of the target.Wherein the bias voltage is set to be 1V-200V, the sputtering power is set to be 4 kW-7 kW, high-purity argon with the flow of 100 sccm-200 sccm is introduced into the chamber, and the surface of the high-purity graphite target is cleaned for 20 minutes-40 minutes by sputtering.

In the embodiment of the disclosure, the surface of a high-purity graphite target of Hauzer850 equipment is sputtered and cleaned, and a coating cavity is vacuumized until the vacuum degree is lower than 5 × 10^-5mbar, running the edited target washing program to start sputtering cleaning of the target surface, wherein the bias voltage is set to be 50V, the sputtering power is set to be 4kW, high-purity argon with the flow rate of 200sccm is introduced into the chamber, and the surface of the high-purity graphite target is sputtered and cleaned for 20 minutes.

Substep S22: sputtering and depositing a DLC film on the surface of the glass;

one side of a glass sample after pretreatment is shielded by using a piece of glass (serving as a baffle) with the same size, a DLC film is deposited only on the side which is not shielded, two pieces of glass are fixed on a sample rotating frame by using a clamping tool and are placed in a vacuum chamber, and the position is adjusted, so that the glass sample is placed in the middle of the graphite target.

In an embodiment of the present disclosure, opening the chamber and mounting the glass sample comprises: stacking a clean and dry punched glass sample and a piece of glass with the same size together, fixing the punched glass sample on a sample rotating frame by using an alligator clamp, putting the sample rotating frame into a vacuum chamber with one surface of the punched glass sample facing outwards, and adjusting the position to enable the glass sample to be placed in the middle of the graphite target. The Hauzer850 apparatus and sample placement position are shown in fig. 5.

Closing the cavity, starting a vacuum pump system, heating the glass sample to 150-300 ℃ while vacuumizing, and vacuumizing to 5 × 10 ℃ while vacuumizing the cavity^-5And when the mbar is less than the mbar, starting sputtering coating. In the coating process, high-purity argon gas with the flow rate of 100 sccm-200 sccm and high-purity acetylene gas with the flow rate of 2 sccm-20 sccm are kept to be introduced, the rotating speed of a sample rotating frame is 1-3 r/min, the bias voltage of the sample is 1-200V, the sputtering power is 4-7 kW, and the sputtering deposition time is 10-20 min. And finally, depositing a DLC resistive film on one surface of the glass sample and depositing a DLC film in the through hole.

In the disclosed embodiment, the set temperature is 300 ℃, and the constant cavity vacuum is pumped to 5 × 10^-5mbar and temperature up to 300 ℃, sputtering coating is started. And in the film coating process, high-purity argon gas with the flow rate of 200sccm and high-purity acetylene gas with the flow rate of 20sccm are kept introduced, the rotating speed of a sample rotating stand is 3 revolutions per minute, the sample bias voltage is 50V, the sputtering power is 4kW, and the sputtering deposition time is 10 minutes.

Substep S23: re-loading the sample after sampling;

keeping the vacuum pump continuously running, naturally cooling the cavity, opening the cavity when the temperature is reduced to below 70 ℃ from 150-300 ℃, taking out the glass sample deposited with the DLC resistive film, turning over the glass sample, enabling the other surface without the film to face outwards, and blocking one surface deposited with the DLC film by glass serving as a baffle. And clamping the sample on the sample rotating stand again, and keeping the sample at the right center of the graphite target.

In the embodiment of the disclosure, the power supply system is turned off, the vacuum pump is kept running, the cavity is naturally cooled, and the temperature is reduced from 300 ℃ to below 70 ℃.

as with sub-step S22, a DLC resistive film was deposited on the surface and in the through-holes of the glass sample. And finally, depositing DLC resistive films with certain surface resistivity on both sides of the glass sample, plating DLC resistive films on through holes of the glass sample, and connecting the DLC resistive films on the upper surface and the lower surface through the DLC films in the through holes.

In the embodiment of the present disclosure, as in substep S23, after the coating is completed, the vacuum pump is kept running, the cavity is naturally cooled, when the temperature is reduced from 300 ℃ to below 70 ℃, the cavity is opened, the glass sample is taken out, and a schematic diagram of the coated glass sample is shown in fig. 6.

Substep S25: sampling and testing;

keeping the vacuum pump continuously running, naturally cooling the cavity, opening the cavity when the temperature is reduced to below 70 ℃ from 150-300 ℃, taking out the DLC resistive glass sample after coating, measuring the surface resistivity of the DLC resistive film on the glass to be 100G omega/□ by using a surface resistance instrument, and measuring the resistance between the DLC films on the upper surface and the lower surface of the glass sample by using a high-resistance meter, wherein the resistance is about 300G omega. The DLC resistive film thickness was measured to be 30nm using a two-dimensional profilometer.

Step S3: preparing a multi-air-gap resistance plate chamber structure based on DLC resistive glass, and further completing the preparation of a high counting rate multi-air-gap resistance plate chamber detector;

the step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

all materials were subjected to a clean-dry treatment: honeycomb plate, printed circuit board, nylon wire (diameter range is 0.23 mm-0.3 mm, diameter of nylon wire is larger than diameter of glass upper hole), insulating film (thickness range is 0.75 mm-1.5 mm), DLC resistive glass with DLC film plated on both sides, glass electrode with graphite layer sprayed on one side, nylon screw, etc.

In the embodiment of the disclosure, a high counting rate MRPC detector with six air gaps is prepared by using a glass sample with finished coating, and the material is subjected to cleaning and drying treatment, which comprises the following steps: 2 honeycomb plates, 2 printed circuit boards, a nylon wire with the diameter of 0.23mm, an insulating Mylar film with the thickness of 1.25mm, 5 DLC resistive glass plated with a DLC resistive film, 2 glass electrodes with a single surface coated with a graphite layer, nylon screws, double-sided adhesive tapes and the like.

the sub-step S32 includes:

substep S321: nylon screws are arranged on two sides of the bottom printed circuit board, and a honeycomb plate is adhered on the outer surface of the circuit board; the honeycomb plate adhered with the double-sided adhesive tape is adhered to the outer surface of the bottom printed circuit board, the inner surface of the bottom printed circuit board is provided with circuit wiring such as electrodes, reading strips and the like, 16 nylon screws are respectively arranged on the left side and the right side (long edge side) of the bottom printed circuit board after being pressed for 12 hours by steel bricks, the nylon screws play a role in fixing nylon wires, nuts are arranged on the outer surface of the bottom printed circuit board, and studs face to the inner surface of the bottom printed circuit board.

Substep S322: arranging a Mylar film on the inner surface of the bottom printed circuit board, exposing the high-voltage electrode, arranging a carbon film on the surface of the high-voltage electrode, and then mounting a glass electrode to form a bottom glass electrode structure;

and the Mylar insulating film is arranged on the inner surface of the bottom printed circuit board, the high-voltage electrode on the bottom printed circuit board is exposed, and the thickness of the insulating film ranges from 0.75mm to 1.5 mm. Cutting a 3cm x 0.5cm carbon film, flatly sticking it on the high-voltage electrode on the bottom printed circuit board, placing the glass electrode with graphite layer on its single surface on the insulating film, pressing the surface with graphite layer down on the insulating film, and ensuring that graphite is tightly stuck on the carbon film

the sub-step S33 includes:

substep S331: nylon threads are wound on the glass electrode by utilizing nylon screws on two sides of the bottom printed circuit board to form a first layer of nylon wire net;

and (4) winding a first layer of nylon wire above the glass electrode installed in the substep S32, wherein the diameter of the nylon wire is 0.23-0.3 mm, knotting the nylon wire and fixing the nylon wire on the first nylon screw at the lower left corner, winding the nylon wire according to a bow-shaped route, and sequentially winding the nylon wire on the nylon screws behind, so as to ensure that the nylon wire is tightly stretched on the surface of the glass electrode, and thus the first layer of nylon wire is wound.

Substep S332: placing a first piece of DLC resistive glass on the first layer of nylon wire net to form a first air gap, sequentially winding a plurality of layers of nylon wire nets by using the same method, and placing a plurality of pieces of DLC resistive glass to form a plurality of air gaps to form a multi-air-gap resistor plate structure;

in the embodiment of the disclosure, a first layer of nylon wire is wound above the graphite glass electrode, the diameter of the nylon wire is 0.23mm, the nylon wire is knotted and fixed on the first nylon screw at the lower left corner, the nylon wire is wound according to a bow-shaped route and is sequentially wound on the nylon screws at the back, the nylon wire is ensured to be tightly stretched on the surface of the glass electrode, and the winding of the first layer of nylon wire is completed. Putting 1 DLC resistive glass on the first nylon wire layer to form 1 air gap, winding the 2 nd nylon wire layer by the same method to ensure that the nylon wire just covers the through hole with the diameter of 0.2mm on the glass, tightly tightening the nylon wire on the surface of the glass sample to finish the winding of the 2 nd nylon wire layer, then putting the 3 rd glass piece, winding the nylon wire by the same method until the 6 th nylon wire layer is wound, and finally installing the other glass electrode with a single surface coated with a graphite layer on the last nylon wire layer.

Substep S34: mounting a top printed circuit board structure and a top glass electrode structure to complete the preparation of the high counting rate multi-air gap resistance board chamber detector;

and (4) mounting the top printed circuit board, similar to the substep S32, gluing a honeycomb plate on the outer surface of the top printed circuit board by using double-sided glue, mounting an insulating film and a carbon film on the inner surface of the top printed circuit board, then buckling the part on the last glass electrode, pressing for 24 hours by using a heavy object, penetrating 48 steel pins through the welding pads of the top and bottom printed circuit boards, and welding the steel pins by using a welding gun, so that the air gap structure of the whole detector is stable.

And removing the heavy object, welding a signal joint, a high-voltage wire and a ground wire on the printed circuit board, coating silica gel on all welding spots, completing assembly, and filling a sealed gas box to complete the manufacture of the high-counting-rate multi-air-gap resistance board chamber detector. A schematic diagram of the completed detector is shown in fig. 7.

So far, the embodiments of the present disclosure have been described in detail with reference to the accompanying drawings. It is to be noted that, in the attached drawings or in the description, the implementation modes not shown or described are all the modes known by the ordinary skilled person in the field of technology, and are not described in detail. Further, the above definitions of the various elements and methods are not limited to the various specific structures, shapes or arrangements of parts mentioned in the examples, which may be easily modified or substituted by those of ordinary skill in the art.

From the above description, those skilled in the art should clearly understand the method for manufacturing the high counting rate multi-gap resistance plate chamber detector according to the present disclosure.

In summary, the present disclosure provides a method for manufacturing a high counting rate multi-air gap resistance chamber detector, which includes drilling a certain number of holes on glass by mechanical drilling or laser drilling, plating DLC resistive films with appropriate surface resistivity on the front and back sides of the glass and the holes by magnetron sputtering, connecting the DLC resistive films on the front and back sides of the glass with the DLC films on the peripheral edges of the glass through the DLC films in the holes, and manufacturing the MRPC detector by using the glass. Under this kind of mode of operation, the MRPC detector can keep enough high gain and stable work in the time, effectively improves the count rate ability of detector, and has following advantage more:

compared with the prior mode that charges pass through glass to neutralize the charges, the method for depositing the DLC resistive film with the appropriate surface resistivity on the glass surface can rapidly neutralize the charges generated in the working process of the detector and improve the counting rate capability of the detector.

According to the method, the small holes are punched in the glass, the DLC resistive film is deposited in the holes, the moving path required in the charge neutralization process is reduced, the charge neutralization speed is further increased, and the counting rate capability of the detector is improved.

Compared with low-resistance glass, the method for punching and depositing the DLC resistive film on the common glass can change the resistivity of the DLC resistive film deposited on the glass more easily by adjusting the coating parameters, so that the high-counting-rate MRPC detector provided by the disclosure can adapt to various requirements more flexibly.

Compared with special glass, the method for laser drilling and depositing the DLC resistive film on the common glass has the advantages that the process of the common float glass is simple, the cost is low, the subsequent polishing of the glass is avoided, and the manufacturing difficulty and the cost of the existing high-counting-rate MRPC detector are reduced.

The manufacturing method of the high-counting-rate MRPC detector can effectively expand the application range of the MRPC detector in high-energy physical experiments and provide technical support for the application of the MRPC detector in different experimental environments.

It should also be noted that directional terms, such as "upper", "lower", "front", "rear", "left", "right", and the like, used in the embodiments are only directions referring to the drawings, and are not intended to limit the scope of the present disclosure. Throughout the drawings, like elements are represented by like or similar reference numerals. Conventional structures or constructions will be omitted when they may obscure the understanding of the present disclosure.

And the shapes and sizes of the respective components in the drawings do not reflect actual sizes and proportions, but merely illustrate the contents of the embodiments of the present disclosure. Furthermore, in the claims, any reference signs placed between parentheses shall not be construed as limiting the claim.

Unless otherwise indicated, the numerical parameters set forth in the specification and attached claims are approximations that can vary depending upon the desired properties sought to be obtained by the present disclosure. In particular, all numbers expressing quantities of ingredients, reaction conditions, and so forth used in the specification and claims are to be understood as being modified in all instances by the term "about". Generally, the expression is meant to encompass variations of ± 10% in some embodiments, 5% in some embodiments, 1% in some embodiments, 0.5% in some embodiments by the specified amount.

Furthermore, the word "comprising" does not exclude the presence of elements or steps not listed in a claim. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements.

The use of ordinal numbers such as "first," "second," "third," etc., in the specification and in the claims to modify a corresponding element does not by itself connote any ordinal number of the element, nor do they represent the order in which an element is sequenced from another element or method of manufacture, but are used merely to distinguish one element having a certain name from another element having a same name.

In addition, unless steps are specifically described or must occur in sequence, the order of the steps is not limited to that listed above and may be changed or rearranged as desired by the desired design. The embodiments described above may be mixed and matched with each other or with other embodiments based on design and reliability considerations, i.e., technical features in different embodiments may be freely combined to form further embodiments.

Those skilled in the art will appreciate that the modules in the device in an embodiment may be adaptively changed and disposed in one or more devices different from the embodiment. The modules or units or components of the embodiments may be combined into one module or unit or component, and furthermore they may be divided into a plurality of sub-modules or sub-units or sub-components. All of the features disclosed in this specification (including any accompanying claims, abstract and drawings), and all of the processes or elements of any method or apparatus so disclosed, may be combined in any combination, except combinations where at least some of such features and/or processes or elements are mutually exclusive. Each feature disclosed in this specification (including any accompanying claims, abstract and drawings) may be replaced by alternative features serving the same, equivalent or similar purpose, unless expressly stated otherwise. Also in the unit claims enumerating several means, several of these means may be embodied by one and the same item of hardware.

Similarly, it should be appreciated that in the foregoing description of exemplary embodiments of the disclosure, various features of the disclosure are sometimes grouped together in a single embodiment, figure, or description thereof for the purpose of streamlining the disclosure and aiding in the understanding of one or more of the various disclosed aspects. However, the disclosed method should not be interpreted as reflecting an intention that: that is, the claimed disclosure requires more features than are expressly recited in each claim. Rather, as the following claims reflect, disclosed aspects lie in less than all features of a single foregoing disclosed embodiment. Thus, the claims following the detailed description are hereby expressly incorporated into this detailed description, with each claim standing on its own as a separate embodiment of this disclosure.

The above-mentioned embodiments are intended to illustrate the objects, aspects and advantages of the present disclosure in further detail, and it should be understood that the above-mentioned embodiments are only illustrative of the present disclosure and are not intended to limit the present disclosure, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present disclosure should be included in the scope of the present disclosure.

Claims

1. A preparation method of a high counting rate multi-air gap resistance plate chamber detector comprises the following steps:

step S1: pretreating a glass sample;

2. The method of claim 1, wherein the step S1 comprises:

substep S11: punching a plurality of through holes on a glass sample; and

substep S12: and cleaning the punched glass sample.

3. The method of claim 1, wherein the step S2 includes:

substep S22: sputtering and depositing a DLC film on one surface of the glass;

substep S23: re-loading the sample after sampling;

substep S25: sampling and testing are performed.

4. The method of claim 1, wherein the step S3 includes:

substep S31: preprocessing materials required by manufacturing a detector;

5. The method of claim 4, wherein the sub-step S32 includes:

6. The method of claim 4, wherein the sub-step S33 includes:

7. The method of claim 2 wherein the through holes have a diameter of 0.2mm to 0.25mm and the distance between adjacent through holes is 3cm to 10 cm.

8. The method of claim 6 wherein the diameter of the nylon wire is in the range of 0.23mm to 0.3mm, and the diameter of the nylon wire is larger than the diameter of the through hole in the DLC resistive glass.

9. The method of claim 8 for fabricating a high count rate multi-gap resistive plate chamber detector, wherein the nylon wire is ensured to cover the through holes on the DLC resistive glass.

10. The method of claim 5 wherein the Mylar insulating film has a thickness in the range of 0.75mm to 1.5 mm.