CN111595566A - Simplified thermal stress ratchet wheel judgment method and equipment of device structure - Google Patents

Simplified thermal stress ratchet wheel judgment method and equipment of device structure Download PDF

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Publication number
CN111595566A
CN111595566A CN202010367623.8A CN202010367623A CN111595566A CN 111595566 A CN111595566 A CN 111595566A CN 202010367623 A CN202010367623 A CN 202010367623A CN 111595566 A CN111595566 A CN 111595566A
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thermal stress
ratchet
device structure
criterion
stress ratchet
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不公告发明人
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Shanghai Shijian Engineering Technology Co ltd
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Shanghai Shijian Engineering Technology Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M13/00—Testing of machine parts
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/14—Force analysis or force optimisation, e.g. static or dynamic forces

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
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  • Evolutionary Computation (AREA)
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  • General Engineering & Computer Science (AREA)
  • Investigating Or Analyzing Materials Using Thermal Means (AREA)

Abstract

The invention relates to a simplified thermal stress ratchet wheel judging method and equipment of a device structure, which are characterized in that two thermal stress ratchet wheel checking surfaces (X + Y/4=1 and X + Z/2= 1) are arranged, and when corresponding parameters of the device structure are judged to meet the two checking surfaces, the device structure can be judged not to generate thermal stress ratchet wheels. Compared with the 3S criterion, the simplified thermal stress ratchet evaluation check surface eliminates the nonconservation of the 3S criterion for ratchet evaluation, and improves the accuracy of thermal stress ratchet judgment. The method is simple and easy to implement, compared with the 3S criterion, any elastic stable area is not lost, meanwhile, the plastic stable area is added, the range of a safe area is expanded to a great extent, the safe area of the safe area far exceeds the 3S criterion, the problem that the safe area of the 3S criterion is over-conservative is solved, and the economy in engineering application is improved.

Description

Simplified thermal stress ratchet wheel judgment method and equipment of device structure
Technical Field
The invention relates to ratchet wheel judging technology, in particular to a method and equipment for judging a ratchet wheel with simplified thermal stress of a device structure.
Background
In industries such as nuclear power, petrochemical industry and the like, the ratchet wheel is a common and important failure mode of an industrial device (such as a pressure container and the like), and the judgment of the ratchet wheel of the device structure plays an important role in the field of industrial application. Compared with the defects that the calculation for judging whether the device structure has the ratchet phenomenon by adopting the standard three-dimensional ratchet curved surface is complex, the time consumption is long, and the safety zone and the danger zone which need to be calculated in a partition mode and identified by ratchet evaluation are relatively difficult, the 3S criterion is popular in the engineering field due to simplicity and easiness in use. However, the 3S criterion is too conservative in its safety region and is not conservative when a local film equivalent stress occurs once, and ratchet evaluation conditions need to be supplemented on a case-by-case basis. Therefore, how to obtain a simplified thermal stress ratchet wheel evaluation method which is simple and easy to implement, high in accuracy, safe and economical is a problem to be solved at present.
Disclosure of Invention
In order to solve the technical problem, the invention discloses a simplified thermal stress ratchet wheel judgment method of a device structure, which comprises the following steps: step S100, a first parameter X, a second parameter Y and a third parameter Z of the device structure are obtained, wherein X = PL/Sy、Y=SQmb/Sy、Z=SQm/Sy，PLPrimary local film equivalent stress, S, for device structureQmbApplying a bending stress range, S, to a thermal film of a device structureQmThermal film stress range, S, for device structuresyCyclic yield stress for the device structure; and S200, if X + Y/4 is less than or equal to 1 and X + Z/2 is less than or equal to 1, judging that the device structure does not generate a thermal stress ratchet.
Another embodiment of the present invention also discloses a thermal stress ratchet determination apparatus of a device structure, the apparatus comprising a processor and a non-transitory computer-readable storage medium storing a computer program, which when executed by the processor implements the simplified thermal stress ratchet determination method of the device structure described above.
In summary, according to the present invention, by providing two thermal stress ratchet checking surfaces (X + Y/4=1 and X + Z/2= 1), when it is determined that the corresponding parameter of the device structure satisfies the two checking surfaces, it is determined that no thermal stress ratchet occurs in the device structure, otherwise, the thermal stress ratchet occurs. Compared with the 3S criterion, the simplified thermal stress ratchet evaluation check surface can meet the requirement of a standard ratchet boundary curved surface, the evaluation result can ensure the safety, the nonconservation of the 3S criterion for ratchet evaluation is eliminated, and the accuracy of thermal stress ratchet judgment is improved. The method is simple and easy to implement, compared with the 3S criterion, any elastic stable area is not lost, meanwhile, the plastic stable area is added, the range of a safe area is expanded to a great extent, the safe area of the safe area far exceeds the 3S criterion, the problem that the safe area of the 3S criterion is over-conservative is solved, and the economy in engineering application is improved. Furthermore, the two thermal stress ratchet checking surfaces are suitable for the universe of X, do not need to evaluate the ratchets in a partitioning mode, and are easy to implement in engineering application.
Drawings
FIG. 1 is a flow chart of a simplified thermal stress ratchet determination method of an apparatus configuration of the present invention;
FIG. 2 is a line graph of the respective XY planes of two thermal stress ratchet decision check planes and a 3S criteria check plane of the present invention when Z = 1/3;
FIG. 3 is a line graph of the respective XY planes of two thermal stress ratchet decision check planes and a 3S criteria check plane of the present invention when Z = 1;
FIG. 4 is another flow chart of a simplified thermal stress ratchet determination method of an apparatus configuration of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings. This description is made by way of example and not limitation to specific embodiments consistent with the principles of the invention, the description being in sufficient detail to enable those skilled in the art to practice the invention, other embodiments may be utilized and the structure of various elements may be changed and/or substituted without departing from the scope and spirit of the invention. The following detailed description is, therefore, not to be taken in a limiting sense.
The invention discloses a simplified thermal stress ratchet wheel judging method of a device structure, which is shown in figure 1 (figure 1 is a flow chart of the simplified thermal stress ratchet wheel judging method of the device structure of the invention), and comprises the following steps:
step S100, a first parameter X, a second parameter Y and a third parameter Z of the device structure are obtained, wherein X = PL/Sy、Y=SQmb/Sy、Z=SQm/Sy，PLIs a primary partial film of the device structureMagnitude stress, SQmbApplying a bending stress range, S, to a thermal film of a device structureQmThermal film stress range, S, for device structuresyIs the cyclic yield stress of the device structure. According to the present invention, the obtained parameters X, Y, Z may be used directly on the one hand; on the other hand, 3 basic parameters X, Y, Z for thermal stress ratchet judgment can be obtained by acquiring 4 common parameters related to the device structure and combining simple conversion relations, and the method is simple and has small calculation amount. Wherein the third parameter Z and the thermal film stress range SQmThe selection of (A) also adapts to the evaluation method of the three-dimensional thermal stress ratchet in the ASME VIII-2 specification file. In one embodiment, the device structure is made to have a local membrane equivalent stress P at one timeL=150MPa, thermal film bending stress range SQmb=300MPa, thermal film stress range SQm=30MPa, cyclic yield stress SyIf =300MPa, X =0.5, Y =1, and Z =0.1 can be calculated.
And S200, if X + Y/4 is less than or equal to 1 and X + Z/2 is less than or equal to 1, judging that the device structure does not generate a thermal stress ratchet. Specifically, the invention provides two checking surfaces X + Y/4=1 and X + Z/2=1 related to the thermal stress ratchet judgment of the device structure. When the relevant parameter X, Y, Z of the device structure satisfies the above condition, it can be determined that the device structure does not generate a thermal stress ratchet, otherwise, it is determined that the device structure generates a thermal stress ratchet. Table 1 gives the thermal stress ratchet decision results for different X, Y and Z corresponding to the two thermal stress ratchet decision check surfaces (X + Y/4=1 and X + Z/2= 1), the 3S criterion check surface (X + Y = 2), and the standard three-dimensional ratchet surface (which may also be referred to as a standard three-dimensional ratchet boundary surface) in the present application, respectively. Where table 1 shows an illustrative example given to illustrate the simplified thermal stress ratchet decision check surface accuracy in the present application.
TABLE 1
（X,Y,Z） Checking the decision result of the surface based on the 3S criterion The judgment result based on the two checking surfaces provided by the invention Judging result based on standard three-dimensional ratchet curved surface
（0.3,0.5,1/3） Can not Can not Can not
（0.9,1,1/3） Can not Will be provided with Will be provided with
（0.2,2.5,1/3） Will be provided with Can not Can not
（0.2,1,1） Can not Can not Can not
（0.4,2,1） Will be provided with Can not Can not
(0.9,1,1) Can not Will be provided with Will be provided with
In conjunction with fig. 2 (fig. 2 is an intersection of the two thermal stress ratchet decision check surfaces and the 3S criterion check surface of the present invention with the XY plane when Z = 1/3) and table 1, it can be seen that, in the polygonal OACDE region, the two thermal stress ratchet decision check surfaces X + Y/4=1 and X + Z/2=1, the 3S criterion check surface X + Y =2 disclosed in the present application, and the determination results of the standard three-dimensional ratchet curved surfaces are consistent; in the triangular ACB region, the simplified thermal stress ratchet determination check surface in the present application is more consistent with the determination result of the standard three-dimensional ratchet curved surface, compared with the 3S criterion check surface. Further, as can be seen from fig. 3 (fig. 3 is a cross-line diagram of the two thermal stress ratchet decision check surfaces and the 3S criterion check surface of the present invention with the XY plane when Z = 1) and table 1, in the polygonal OABC region, the two thermal stress ratchet decision check surfaces X + Y/4=1 and X + Z/2=1, the 3S criterion check surface X + Y =2, and the determination results of the standard three-dimensional ratchet curved surfaces are consistent; in the quadrilateral ABED area, compared with a 3S standard check surface, the thermal stress ratchet judgment check surface in the application is more consistent with the judgment result of a standard three-dimensional ratchet curved surface. Therefore, compared with the 3S criterion, the two thermal stress ratchet wheel judgment check surfaces disclosed by the application have wider application range and higher accuracy. Compared with a standard three-dimensional ratchet curved surface, the method for judging and checking the thermal stress ratchet surface is simple and small in calculation amount.
In summary, according to the present invention, by providing two thermal stress ratchet checking surfaces (X + Y/4=1 and X + Z/2= 1), when it is determined that the corresponding parameter of the device structure satisfies the two checking surfaces, it is determined that no thermal stress ratchet occurs in the device structure, otherwise, the thermal stress ratchet occurs. Compared with the 3S criterion, the simplified thermal stress ratchet evaluation check surface can meet the requirement of a standard ratchet boundary curved surface, the evaluation result can ensure the safety, the nonconservation of the 3S criterion for ratchet evaluation is eliminated, and the accuracy of thermal stress ratchet judgment is improved. The method is simple and easy to implement, compared with the 3S criterion, any elastic stable area is not lost, meanwhile, the plastic stable area is added, the range of a safe area is expanded to a great extent, the safe area of the safe area far exceeds the 3S criterion, the problem that the safe area of the 3S criterion is over-conservative is solved, and the economy in engineering application is improved. Furthermore, the two thermal stress ratchet checking surfaces are both suitable for the universe of X, partition ratchet evaluation is not needed, the method is easy to implement in engineering application, a safe area controlled by the method is generally enough to be used in engineering, and a new thought and understanding mode is provided for thermal stress ratchet evaluation.
According to another embodiment of the present invention, step S200 may be followed by step S300 (FIG. 4 is another flow chart of a simplified thermal stress ratchet determination method for an apparatus structure of the present invention), and if X + Y/4 ≦ 1 or X + Z/2 ≦ 1 is not satisfied, it is determined that thermal stress ratchet may occur in the apparatus structure.
Further, the present invention also discloses a simplified thermal stress ratchet determination apparatus of a device structure, the apparatus includes a processor and a non-transitory computer readable storage medium storing a computer program, when the computer program is executed by the processor, the simplified thermal stress ratchet determination method of any one of the above device structures is implemented, and related contents can refer to the foregoing contents, and are not described in detail herein.
Moreover, other implementations of the invention will be apparent to those skilled in the art from consideration of the specification of the invention disclosed herein. The embodiments and/or aspects of the embodiments can be used in the systems and methods of the present invention alone or in any combination. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

Claims (3)

1. A method for judging a simplified thermal stress ratchet of a device structure is characterized by comprising the following steps:
step S100, a first parameter X, a second parameter Y and a third parameter Z of the device structure are obtained, wherein X = PL/Sy、Y=SQmb/Sy、Z=SQm/Sy，PLPrimary local film equivalent stress, S, for device structureQmbApplying a bending stress range, S, to a thermal film of a device structureQmThermal film stress range, S, for device structuresyCyclic yield stress for the device structure;
and S200, if X + Y/4 is less than or equal to 1 and X + Z/2 is less than or equal to 1, judging that the device structure does not generate a thermal stress ratchet.
2. The method of claim 1, wherein step S200 is followed by step S300, and if X + Y/4 ≦ 1 or X + Z/2 ≦ 1 is determined that thermal stress ratcheting of the device structure may occur.
3. A simplified thermal stress ratchet decision device of an apparatus structure, characterized in that the device comprises a processor and a non-transitory computer-readable storage medium storing a computer program which, when executed by the processor, implements the simplified thermal stress ratchet decision method of an apparatus structure according to claims 1 and 2.
CN202010367623.8A 2020-05-01 2020-05-01 Simplified thermal stress ratchet wheel judgment method and equipment of device structure Pending CN111595566A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101476715A (en) * 2009-01-20 2009-07-08 西安交通大学 Early warning method for failure of water-cooling wall of power boiler
US20130087569A1 (en) * 2011-10-05 2013-04-11 Justin Bredar Cutts Tank and Pressure Vessel Skirt Thermal Ratcheting Prevention Device
CN103761365A (en) * 2013-12-28 2014-04-30 合肥通用机械研究院 High-temperature pressure vessel creep fatigue strength design method based on service life
CN104318010A (en) * 2014-10-21 2015-01-28 苏州热工研究院有限公司 Membrane wall tube inner wall corrosion failure critical judging method
CN104408325A (en) * 2014-12-12 2015-03-11 温州大学 Optimization method of micro-electronic encapsulation thermal expansion coefficient reliability matching
CN105183926A (en) * 2015-05-07 2015-12-23 苏州纽威阀门股份有限公司 Valve body optimization design method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101476715A (en) * 2009-01-20 2009-07-08 西安交通大学 Early warning method for failure of water-cooling wall of power boiler
US20130087569A1 (en) * 2011-10-05 2013-04-11 Justin Bredar Cutts Tank and Pressure Vessel Skirt Thermal Ratcheting Prevention Device
CN103761365A (en) * 2013-12-28 2014-04-30 合肥通用机械研究院 High-temperature pressure vessel creep fatigue strength design method based on service life
CN104318010A (en) * 2014-10-21 2015-01-28 苏州热工研究院有限公司 Membrane wall tube inner wall corrosion failure critical judging method
CN104408325A (en) * 2014-12-12 2015-03-11 温州大学 Optimization method of micro-electronic encapsulation thermal expansion coefficient reliability matching
CN105183926A (en) * 2015-05-07 2015-12-23 苏州纽威阀门股份有限公司 Valve body optimization design method

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* Cited by examiner, † Cited by third party
Title
WOLF REINHARDT: "ON THE INTERACTION OF THERMAL MEMBRANE AND THERMAL BENDING STRESS IN SHAKEDOWN ANALYSIS", 《ASME 2008 PRESSURE VESSELS AND PIPING CONFERENCE》 *
丁伯民: "对ASME Ⅷ-2 关于"热应力棘轮现象评定"规定的再商榷", 《化工设备与管道》 *
沈鋆等: "对ASME Ⅷ-2(2013版)热应力棘轮评定方法修订的解读", 《化工设备与管道》 *

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