CN111593331A - Film deposition device - Google Patents

Film deposition device Download PDF

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Publication number
CN111593331A
CN111593331A CN202010468625.6A CN202010468625A CN111593331A CN 111593331 A CN111593331 A CN 111593331A CN 202010468625 A CN202010468625 A CN 202010468625A CN 111593331 A CN111593331 A CN 111593331A
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China
Prior art keywords
gas
gas supply
reaction chamber
reaction
layer region
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Pending
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CN202010468625.6A
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Chinese (zh)
Inventor
马红霞
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Yangtze Memory Technologies Co Ltd
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Yangtze Memory Technologies Co Ltd
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Priority to CN202010468625.6A priority Critical patent/CN111593331A/en
Publication of CN111593331A publication Critical patent/CN111593331A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/403—Oxides of aluminium, magnesium or beryllium

Abstract

The embodiment of the application discloses film deposition apparatus includes: a reaction chamber in which a loading part for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber comprises a bottom layer area, a middle layer area and a high layer area along the first direction; a first gas supply portion provided in the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber in the first direction; a second gas supply portion provided in the bottom layer region and having a top height not higher than that of the first gas supply portion, for supplying a first reaction gas to the bottom layer region of the reaction chamber in a second direction perpendicular to the first direction; a third gas supply part for supplying a second reaction gas into the reaction chamber.

Description

Film deposition device
Technical Field
The embodiment of the application relates to the field of semiconductor manufacturing, in particular to a thin film deposition device.
Background
The Atomic Layer Deposition (ALD) technique is a method of forming a film by alternately supplying 2 (or 2 or more) types of reaction gases used for film formation onto a wafer under a certain film formation condition (temperature, pressure, time, etc.), adsorbing the reaction gases in units of a monoatomic Layer, and performing a surface reaction.
For example, formation of Al2O3In the case of an (alumina) thin film, TMA (Al (CH) may be alternately supplied by the ALD technique3)3Trimethylaluminum) reaction gas and O3(ozone) reaction gas, whereby high-quality film formation can be performed at a temperature of 300-600 ℃. Since TMA has a thermal decomposition temperature of about 400℃, Al is formed at a temperature of 400 ℃ or higher2O3In the case of a thin film, only a short nozzle is used for air intake, and a mode of twice feeding is used. However, Al is formed using the above method2O3In the case of thin films, there is Al formed on the wafers in the process boat2O3The thickness of the film gradually decreases along the direction from the top to the bottom of the process boat.
Therefore, it is desirable to further improve the ALD process to increase Al formed at high temperatures2O3Uniformity of the film.
Disclosure of Invention
In view of the above, embodiments of the present application provide a thin film deposition apparatus to solve at least one problem in the prior art.
In order to achieve the above purpose, the technical solution of the embodiment of the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a thin film deposition apparatus, including:
a reaction chamber in which a loading part for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber comprises a bottom layer area, a middle layer area and a high layer area along the first direction;
a first gas supply portion provided in the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber in the first direction;
a second gas supply portion provided in the bottom layer region and having a top height not higher than that of the first gas supply portion, for supplying a first reaction gas to the bottom layer region of the reaction chamber in a second direction perpendicular to the first direction;
a third gas supply part for supplying a second reaction gas into the reaction chamber.
In an alternative embodiment, the first gas supply is specifically configured to supply an inert gas to the middle layer region and the upper layer region of the reaction chamber together with the first reaction gas;
wherein the flow rate of the inert gas is greater than the flow rate of the first reaction gas.
In an alternative embodiment, the first gas supply part supplies an inert gas to an upper layer area of the reaction chamber together with a first reaction gas at a first flow rate; also for supplying a first reactant gas at a second flow rate to a mid-level region of the reaction chamber;
wherein the first flow rate is greater than the second flow rate.
In an alternative embodiment, the first gas supply is configured to supply a gas at a flow rate greater than the second gas supply.
In an alternative embodiment, the first gas supply part is extended from the bottom of the reaction chamber in the first direction.
In an alternative embodiment, the second gas supply portion is provided at the bottom of the reaction chamber to extend in the second direction.
In an alternative embodiment, the third gas supply portion extends from the bottom layer region to the upper layer region of the reaction chamber in the first direction.
In an alternative embodiment, the first gas supply portion includes a first nozzle hole provided at a tip end of the first gas supply portion, the first nozzle hole being provided toward the high-rise region.
In an alternative embodiment, the second gas supply portion includes a second nozzle hole disposed at a top end of the second gas supply portion, and the second nozzle hole is disposed toward the loading part.
In an alternative embodiment, the third gas supply portion includes a plurality of third nozzle holes separately provided in the first direction, the plurality of third nozzle holes being provided toward the loading part.
In an alternative embodiment, the first reactant gas comprises trimethylaluminum and the second reactant gas comprises ozone.
In an alternative embodiment, the inert gas comprises nitrogen.
An embodiment of the present application provides a thin film deposition apparatus, including: a reaction chamber in which a loading part for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber comprises a bottom layer area, a middle layer area and a high layer area along the first direction; a first gas supply portion provided in the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber in the first direction; a second gas supply portion provided in the bottom layer region and having a top height not higher than that of the first gas supply portion, for supplying a first reaction gas to the bottom layer region of the reaction chamber in a second direction perpendicular to the first direction; a third gas supply part for supplying a second reaction gas into the reaction chamber. The thin film deposition device provided by the embodiment of the application is internally provided with three gas supply parts, wherein a first reaction gas is supplied by adopting a first gas supply part and a second gas supply part; the second gas supply part is arranged in the bottom layer area of the reaction chamber, the top end height of the second gas supply part is not higher than the top end height of the first gas supply part, and the second gas supply part is used for supplying the first reaction gas to the bottom layer area of the reaction chamber along the second direction so as to ensure the supply requirement of the first reaction gas in the bottom layer area of the reaction chamber, and therefore the uniformity of a thin film formed on a wafer in the reaction chamber is improved.
Drawings
Fig. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present disclosure.
Detailed Description
Exemplary embodiments disclosed in the present application will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present application. It will be apparent, however, to one skilled in the art, that the present application may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order to avoid obscuring the present application; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.
In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.
It will be understood that when an element or layer is referred to as being "on" … …, "adjacent to … …," "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to the other elements or layers or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on … …," "directly adjacent to … …," "directly connected to" or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present application. And the discussion of a second element, component, region, layer or section does not imply that a first element, component, region, layer or section is necessarily present in the application.
Spatial relationship terms such as "under … …", "under … …", "below", "under … …", "above … …", "above", and the like, may be used herein for ease of description to describe the relationship of one element or feature to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, then elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below … …" and "below … …" can encompass both an orientation of up and down. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.
So that the manner in which the features and elements of the present embodiments can be understood in detail, a more particular description of the embodiments, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings.
An embodiment of the present application provides a thin film deposition apparatus, and fig. 1 is a schematic view of the thin film deposition apparatus provided in the embodiment of the present application, and as shown in fig. 1, the apparatus includes:
a reaction chamber 110 in which a loading part 111 for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber 110 includes a bottom layer region, a middle layer region, and a top layer region along the first direction;
a first gas supply part 120 disposed at the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber 110 in the first direction;
a second gas supply part 130 disposed at the bottom layer region and having a top height of the second gas supply part 130 not higher than that of the first gas supply part 120, for supplying a first reaction gas to the bottom layer region of the reaction chamber 110 in a second direction perpendicular to the first direction;
a third gas supply part 140 for supplying a second reaction gas into the reaction chamber 110.
In an embodiment of the present application, the first reactive gas comprises trimethylaluminum and the second reactive gas comprises ozone. The thin film generated based on the first reactive gas and the second reactive gas includes alumina.
In the embodiment of the present application, the first gas supply part 120 and the second gas supply part 130 supply the first reaction gas to the reaction chamber 110 through different gas lines, respectively.
In the embodiment of the present application, the height of the top end of the second gas supply part 130 is lower than that of the first gas supply part 120.
Here, the first direction may correspond to a vertical direction in fig. 1; the second direction may correspond to a horizontal direction in fig. 1.
Note that the first gas supply portion 120 includes a first pipe portion extending in the second direction and a second pipe portion extending in the first direction; the second gas supply part 130 includes a third duct part extending in the second direction; the third gas supply part 140 includes a fourth pipe part extending in the second direction and a fifth pipe part extending in the first direction. Wherein the first pipe portion, the third pipe portion, and the fourth pipe portion refer to, for example, pipe portions extending from the outside of the reaction chamber 110 into the inside of the reaction chamber 110; the second pipe portion and the fifth pipe portion refer to, for example, pipe portions extending near the loading part in the reaction chamber 110. The arrangement of the first duct portion, the third duct portion and the fourth duct portion in the first direction illustrated in fig. 1 is only for illustrating the overall appearance of each gas supply portion, and is not used for limiting the relative positional relationship of the first duct portion, the third duct portion and the fourth duct portion. In practical applications, the first duct portion, the third duct portion and the fourth duct portion in the embodiment of the present application are located at the same horizontal plane, that is, at the same height in the first direction. The arrangement of the second duct portion and the fifth duct portion in the second direction illustrated in fig. 1 of the present application is only for illustrating the overall appearance of each gas supply portion, and is not used for limiting the relative positional relationship between the second duct portion and the fifth duct portion. In practical applications, the horizontal distances between the side walls of the second and fifth pipe portions close to the loading part 111 and the loading part 111 are the same in the embodiment of the present application, that is, the side walls are located at the same distance position in the second direction. In addition, it should be noted that a horizontal distance between a top end (an end portion close to the loading part 111 in fig. 1) of the second gas supply part 130 and the loading part 111 may be equal to a horizontal distance between a side wall of the second/fifth duct part close to the loading part 111 and the loading part 111.
In the embodiment of the present application, the first gas supply part 120 extends from the bottom of the reaction chamber 110 in the first direction. The height of the top end of the first gas supply part 120 does not exceed the height of the bottom layer region of the reaction chamber 110. The first gas supply part 120 includes a first nozzle hole 121 disposed at a top end of the first gas supply part 120, and the first nozzle hole 121 is disposed toward the upper layer region. As shown in fig. 1, the first gas supply part 120 extends from the bottom of the reaction chamber 110 in the vertical direction, and the first gas supply part 120 supplies the first reaction gas to the middle layer region and the upper layer region of the reaction chamber 110 in the vertical direction through the first nozzle hole 121. Here, the top end of the first gas supply part 120 (the first nozzle hole 121) is located, for example, in a range from the bottom end of the loading part 111 to a position 1/3 upward from the bottom end of the loading part 111, so as to avoid a problem that the first gas supply part 120 is too high to cause decomposition of the first reaction gas in the first gas supply part 120.
In the embodiment of the present application, the first gas supply part 120 is further configured to supply an inert gas to the middle layer region and the upper layer region of the reaction chamber 110 together with the first reaction gas; wherein the flow rate of the inert gas is greater than the flow rate of the first reaction gas. The inert gas comprises nitrogen. It should be noted that, since the first gas supply unit 120 is located at the bottom region of the reaction chamber 110 and the height of the top end of the first gas supply unit 120 does not exceed the height of the bottom region of the reaction chamber 110, a large flow rate of gas is required to be introduced to supply the first reaction gas to the middle layer region and the upper layer region of the reaction chamber 110, however, the flow rate of the reaction gas determines the thickness of the thin film deposition, and therefore, the flow rate of the reaction gas is also required to be controlled within a certain range to control the thickness of the thin film deposition, so that the flow rate of the gas supplied from the first gas supply unit 120 can be increased by mixing the inert gas not participating in the reaction with the first reaction gas and supplying the inert gas to the reaction chamber 110.
In the embodiment of the present application, the first gas supply part 120 is specifically configured to supply an inert gas and a first reaction gas together to a high layer region of the reaction chamber 110 at a first flow rate, and supply the first reaction gas to a middle layer region of the reaction chamber 110 at a second flow rate; wherein the first flow rate is greater than the second flow rate. In order to make the thickness of the thin film deposition more uniform, the region where the reaction gas is supplied may be controlled by supplying the first reaction gas a plurality of times, for example, the first gas supply part 120 needs to supply the first reaction gas to the middle layer region and the upper layer region of the reaction chamber 110, and then the first gas supply part 120 may be implemented by supplying the first gas to the upper layer region of the reaction chamber 110 and the second gas to the middle layer region of the reaction chamber 110. Since the first supply of gas is located higher than the second supply of gas, the gas flow rate required for the first supply of gas is greater than the gas flow rate required for the second supply of gas. Since the first gas supply requires the first reaction gas to be supplied to the upper region of the reaction chamber 110, the total flow rate of the gas supplied from the first gas supply part 120 may be increased by mixing the inert gas not participating in the reaction with the first reaction gas to be supplied to the reaction chamber 110, so that the gas may be supplied to the upper region of the reaction chamber 110.
In the embodiment of the present application, the flow rate of the gas supplied from the first gas supplying part 120 is greater than that of the gas supplied from the second gas supplying part 130. Since the second gas supply unit 130 is disposed in the bottom region of the reaction chamber 110, and the second gas supply unit 130 only needs to supply the first reaction gas to the bottom region of the reaction chamber 110, the flow rate of the gas supplied by the second gas supply unit 130 does not need to be too large, and the flow rate requirement of the wafer in the bottom region can be satisfied.
In the embodiment of the present application, the second gas supply part 130 is extended along the second direction at the bottom of the reaction chamber 110. As shown in fig. 1, the second direction can be regarded as a horizontal direction of fig. 1, the second gas supply part 130 extends in the horizontal direction at the bottom of the reaction chamber 110, the second gas supply part 130 includes a second nozzle hole 131 disposed at a top end of the second gas supply part 130, and the second nozzle hole 131 is disposed toward the loading part 111. So that the first reaction gas can be supplied to the surface of the wafer in the loading part 111 in a horizontal direction (second direction) while the second gas supply part 130 supplies the first reaction gas through the second nozzle hole 131. Wherein the height of the second nozzle hole 131 in the reaction chamber 110 is lower than the height of the first nozzle hole 121 in the reaction chamber 110.
In the embodiment, the third gas supply part 140 extends from the bottom layer region to the upper layer region of the reaction chamber 110 along the first direction, and the third gas supply part 140 is configured to supply the second reaction gas to the bottom layer region, the middle layer region, and the upper layer region of the reaction chamber 110. The third gas supply part 140 includes a plurality of third nozzle holes 141 separately provided in the first direction, and the plurality of third nozzle holes 141 are provided toward the loading part 111. As shown in fig. 1, the third gas supply part 140 is provided with a plurality of third nozzle holes 141 toward the loading part 111, and the plurality of third nozzle holes 141 extend from the bottom layer region to the upper layer region of the reaction chamber 110, so that the plurality of third nozzle holes 141 can supply a second reaction gas to the surface of the wafer in the loading part 111 in a horizontal direction (second direction).
Since the first and second reaction gases can be uniformly and sufficiently supplied to the bottom layer region, the middle layer region, and the upper layer region of the reaction chamber 110, the first and second reaction gases can be uniformly and sufficiently supplied to the bottom layer region, the middle layer region, and the upper layer region of the loading part 111. Accordingly, the thin film deposition apparatus provided by the present application can improve the uniformity of thin films formed on a plurality of wafers in the loading part 111.
A specific embodiment is provided below to explain the thin film deposition apparatus of the present application in detail.
Trimethylaluminum is used as a first reaction gas, ozone is used as a second reaction gas, and nitrogen is used as an inert gas. Nitrogen gas and trimethylaluminum gas are supplied to a high layer region of the reaction chamber at a first flow rate through a first gas supply portion provided at a bottom layer region of the reaction chamber, and trimethylaluminum gas is supplied to a middle layer region of the reaction chamber at a second flow rate. Wherein the first flow rate is greater than the second flow rate. It should be noted that the area where the nitrogen gas and the trimethylaluminum gas are supplied can be controlled by controlling the sum of the flow rates of the nitrogen gas and the trimethylaluminum gas, and the thickness of the deposited thin film can also be controlled by adjusting the ratio of the nitrogen gas and the trimethylaluminum gas. In the embodiment of the present application, trimethylaluminum gas is supplied to the upper layer region of the reaction chamber through the first nozzle hole of the first gas supply portion by adjusting the flow rate of nitrogen gas. That is, the flow rate of the nitrogen gas is adjusted so that the sum of the flow rates of the nitrogen gas and the trimethylaluminum gas is adjusted to the flow rate of the gas supplied to the upper layer region of the reaction chamber through the first nozzle. For example, a large flow of nitrogen gas carrying a small flow of trimethylaluminum gas is supplied to the upper region of the reaction chamber through the first nozzle hole of the first gas supply portion by 20slm of nitrogen gas and 0.5slm of trimethylaluminum gas; then, a small flow of trimethylaluminum gas was supplied to the middle layer region of the reaction chamber through the first nozzle of the first gas supply unit by 1.8slm of trimethylaluminum gas. It should be noted that, in the embodiment of the present application, the flow rate of the trimethylaluminum gas supplied to the reaction chamber from the first nozzle of the first gas supply portion is, for example, 0.1slm to 50slm, and preferably, the flow rate is in a range of 0.5slm to 10 slm. The flow rate of the nitrogen gas supplied to the reaction chamber from the first nozzle of the first gas supply portion in the embodiment of the present application is, for example, from 10slm to 50slm, and preferably, from 15slm to 25 slm.
Supplying trimethylaluminum gas to the bottom region of the reaction chamber through a second gas supply portion disposed at the bottom region of the reaction chamber and having a top height not higher than a top height of the first gas supply portion. The second gas supply part extends along the second direction at the bottom of the reaction chamber, and the second spray hole of the second gas supply part is arranged towards the loading part, so that the second gas supply part only needs to supply a small flow of trimethylaluminum gas to meet the supply requirement of the bottom layer area of the reaction chamber. For example, a small flow rate of trimethylaluminum gas is supplied to the bottom layer region of the reaction chamber through the second nozzle of the second gas supply portion by 1.5slm of trimethylaluminum gas. It should be noted that, in the embodiment of the present application, the flow rate of the trimethylaluminum gas supplied to the reaction chamber from the second nozzle of the second gas supply unit is, for example, 0.1slm to 50slm, and preferably, the flow rate is in a range of 0.5slm to 10 slm.
Ozone gas is supplied to the bottom layer region, the middle layer region, and the upper layer region of the reaction chamber through a third gas supply portion extending from the bottom layer region to the upper layer region of the reaction chamber in the first direction. In the embodiment of the present invention, the flow rate of the ozone gas supplied to the reaction chamber through the plurality of third nozzles of the third gas supply unit is, for example, from 0.1slm to 50slm, and preferably from 1slm to 20 slm.
Since trimethylaluminum gas and ozone gas can be uniformly and sufficiently supplied to the bottom layer region, the middle layer region, and the upper layer region of the reaction chamber, trimethylaluminum gas and ozone gas can also be uniformly and sufficiently supplied to the bottom layer region, the middle layer region, and the upper layer region of the loading part. Therefore, the thin film deposition apparatus provided by the present application can improve the uniformity of thin films formed on a plurality of wafers in the loading part.
It should be noted that, in the embodiments of the present application, the deposition speed and the deposition thickness of the thin film can also be adjusted by adjusting the temperature and the gas pressure of the reaction chamber.
It should be noted that, in the embodiment of the present application, the deposition speed and the deposition thickness of the thin film may also be adjusted by adjusting the gas supply time of the first reactive gas and the second reactive gas.
In the embodiment of the present application, a degassing step is further required to be introduced into the gap between each gas supply, so as to discharge the excess gas in the reaction chamber after each gas supply is finished and before the next gas supply is started, thereby achieving the purpose of cleaning the reaction chamber. It should be noted that the degassing step may also be performed by introducing a clean gas into the reaction chamber. The cleaning gas includes an inert gas such as nitrogen, etc.
An embodiment of the present application provides a thin film deposition apparatus, including: a reaction chamber in which a loading part for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber comprises a bottom layer area, a middle layer area and a high layer area along the first direction; a first gas supply portion provided in the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber in the first direction; a second gas supply portion provided in the bottom layer region and having a top height not higher than that of the first gas supply portion, for supplying a first reaction gas to the bottom layer region of the reaction chamber in a second direction perpendicular to the first direction; a third gas supply part for supplying a second reaction gas into the reaction chamber. The thin film deposition device provided by the embodiment of the application is internally provided with three gas supply parts, wherein a first reaction gas is supplied by adopting a first gas supply part and a second gas supply part; the second gas supply part is arranged in the bottom layer area of the reaction chamber, the top end height of the second gas supply part is not higher than the top end height of the first gas supply part, and the second gas supply part is used for supplying the first reaction gas to the bottom layer area of the reaction chamber along the second direction so as to ensure the supply requirement of the first reaction gas in the bottom layer area of the reaction chamber, and therefore the uniformity of a thin film formed on a wafer in the reaction chamber is improved.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present application. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. It should be understood that, in the various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus may be implemented in other manners.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (12)

1. A thin film deposition apparatus, comprising:
a reaction chamber in which a loading part for stacking and accommodating a plurality of wafers in a first direction is disposed; the reaction chamber comprises a bottom layer area, a middle layer area and a high layer area along the first direction;
a first gas supply portion provided in the bottom layer region for supplying a first reaction gas to the middle layer region and the upper layer region of the reaction chamber in the first direction;
a second gas supply portion provided in the bottom layer region and having a top height not higher than that of the first gas supply portion, for supplying a first reaction gas to the bottom layer region of the reaction chamber in a second direction perpendicular to the first direction;
a third gas supply part for supplying a second reaction gas into the reaction chamber.
2. The thin film deposition apparatus according to claim 1,
the first gas supply part is used for supplying inert gas and the first reaction gas to a middle layer area and a high layer area of the reaction chamber;
wherein the flow rate of the inert gas is greater than the flow rate of the first reaction gas.
3. The thin film deposition apparatus according to claim 1,
the first gas supply part is used for supplying inert gas and first reaction gas to the high-rise area of the reaction chamber together with a first flow rate; also for supplying a first reactant gas at a second flow rate to a mid-level region of the reaction chamber;
wherein the first flow rate is greater than the second flow rate.
4. The thin film deposition apparatus according to claim 1,
the first gas supply portion supplies gas at a flow rate greater than that of the second gas supply portion.
5. The thin film deposition apparatus according to claim 1,
the first gas supply part extends from the bottom of the reaction chamber along the first direction.
6. The thin film deposition apparatus according to claim 1,
the second gas supply part is arranged at the bottom of the reaction chamber and extends along the second direction.
7. The thin film deposition apparatus according to claim 1,
the third gas supply portion extends from a bottom layer region to the upper layer region of the reaction chamber in the first direction.
8. The thin film deposition apparatus according to claim 1,
the first gas supply part comprises a first spray hole arranged at the top end of the first gas supply part, and the first spray hole is arranged towards the high-rise area.
9. The thin film deposition apparatus according to claim 1,
the second gas supply part comprises a second spray hole arranged at the top end of the second gas supply part, and the second spray hole is arranged towards the loading part.
10. The thin film deposition apparatus according to claim 1,
the third gas supply part includes a plurality of third spray holes separately provided in the first direction, the plurality of third spray holes being provided toward the loading part.
11. The thin film deposition apparatus according to claim 1,
the first reactive gas comprises trimethylaluminum and the second reactive gas comprises ozone.
12. The thin film deposition apparatus according to claim 2,
the inert gas comprises nitrogen.
CN202010468625.6A 2020-05-28 2020-05-28 Film deposition device Pending CN111593331A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145533A1 (en) * 2006-11-29 2008-06-19 Hitachi Kokusai Electric Inc. Substrate processing apparatus and substrate processing method
JP2009295729A (en) * 2008-06-04 2009-12-17 Hitachi Kokusai Electric Inc Substrate processing apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080145533A1 (en) * 2006-11-29 2008-06-19 Hitachi Kokusai Electric Inc. Substrate processing apparatus and substrate processing method
JP2009295729A (en) * 2008-06-04 2009-12-17 Hitachi Kokusai Electric Inc Substrate processing apparatus

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Application publication date: 20200828