CN111585589A - Multichannel small-sized broadband receiver - Google Patents
Multichannel small-sized broadband receiver Download PDFInfo
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- CN111585589A CN111585589A CN202010457437.3A CN202010457437A CN111585589A CN 111585589 A CN111585589 A CN 111585589A CN 202010457437 A CN202010457437 A CN 202010457437A CN 111585589 A CN111585589 A CN 111585589A
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- H—ELECTRICITY
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- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
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Abstract
The invention discloses a multi-channel small broadband receiver, comprising: the system comprises a signal processor, a small broadband antenna group and a broadband radio frequency receiving front end group; the broadband radio frequency receiving front end group is positioned between the small broadband antenna group and the signal processor; the small broadband antenna in the small broadband antenna group is correspondingly connected with the broadband radio frequency receiving front end in the broadband radio frequency receiving front end group one by one; the small broadband antenna group is used for receiving broadband microwave signals in a space; the broadband radio frequency receiving front end group amplifies, filters and down-mixes the broadband microwave signals to intermediate frequency signals and then sends the intermediate frequency signals to the signal processor; and the signal processor is used for performing analog-to-digital conversion on the intermediate frequency signal, converting the intermediate frequency signal into a digital signal and then performing digital signal processing. The invention can greatly reduce the volume of the existing system under the condition of unchanged functions.
Description
Technical Field
The invention relates to the field of microwave receivers, in particular to a multichannel small-sized broadband receiver.
Background
With the rapid development of wireless technologies such as mobile communication, satellite communication, and radar, communication and radar frequencies are developing into high frequency bands and wide bands. For better detection, reception of communication and radar signals, microwave receivers will be developed towards broadband, miniaturization and portability.
The patent CN201711437680.3 'a low-frequency broadband receiver system', published on 2018, 6, month and 15 days, provides a low-frequency broadband receiver system, which comprises a front-end circuit system, an analog-to-digital conversion circuit system and a telescope digital operation board; the front-end circuit system comprises a primary processing module, a secondary processing module and a clock module; the primary processing module is used for amplifying and mixing the radio frequency signal to generate an intermediate frequency signal; the secondary processing module is used for extracting passband signals of corresponding frequency bands in the intermediate frequency signals according to the instruction so as to be processed by the analog-to-digital conversion circuit system; the clock module is used for providing a clock for the analog-to-digital conversion circuit system; the analog-to-digital conversion circuit system is used for converting the intermediate frequency passband signal into a digital signal; the telescope digital operation board comprises a plurality of FPGA mother boards, an AD daughter board and a tail board and is used for carrying out multi-stage DDC, PFB, FFT and FIR parallel filtering on digital signals from the analog-to-digital conversion circuit system. However, the front-end system is large in size due to the modular interconnection.
Patent CN201720926906.5, "wideband receiver radio frequency front end device", published as 2018, 2, 16, provides a wideband receiver radio frequency front end device, which comprises an upper cover plate, an upper shielding frame with cavities at upper and lower ends, an upper printed circuit board, a middle shielding layer, a lower printed circuit board, a lower shielding frame with cavities at upper and lower ends, and a lower cover plate; the filter assembly in the active radio frequency channel module is embedded in the upper layer shielding frame, and other channel circuits are integrated on the upper layer front surface of the upper layer printed circuit board; the local oscillator circuit and the control circuit of the frequency source module are integrated on the lower-layer front side of the lower-layer printed circuit board; the power line and the control line of the active radio frequency channel module are integrated on the upper back of the upper printed circuit board and are correspondingly connected with the power line and the control line of the frequency source module integrated on the lower back of the lower printed circuit board through the power connection hole and the signal connection hole of the middle shielding layer respectively. However, the structure of the multi-layer printed board and the module is large in size.
Patent CN201711413356.8, "three-dimensional integrated package of millimeter wave antenna and silicon-based component", published in 2017, 12, 24, proposes a three-dimensional integrated package of millimeter wave antenna and silicon-based multi-channel component, which includes a top-layer radiating microstrip patch antenna array, a high-resistivity silicon substrate with TSV feed structure, a dielectric wiring layer with microwave routing and digital routing, a surrounding frame with TSV three-dimensional vertical transmission structure, and an airtight package cover plate with TSV transmission structure. Meanwhile, the microstrip patch antenna array, the microwave chip, the digital chip and the passive device are integrated in the same module through an MEMS (micro-electromechanical systems) process, the middle part of the enclosure frame is provided with a TSV (through silicon via) structure for vertically transmitting microwave signals, the integration level is high, the microwave performance is excellent, and the multifunctional and miniaturization of the assembly can be realized. However, although the antenna and the silicon-based component adopt a silicon-based MEMS process, the component adopts a single-layer microstrip patch antenna, has a narrow bandwidth, does not have a receiving filter bank, does not have an anti-interference function, does not adopt an active TVS integrated digital device, and has a low integration level.
Disclosure of Invention
The invention aims to provide a multichannel small-sized broadband receiver, which achieves the purpose of greatly reducing the volume of the existing system under the condition of unchanged functions.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a multi-channel compact wideband receiver comprising: the system comprises a signal processor, a small broadband antenna group and a broadband radio frequency receiving front end group; the broadband radio frequency receiving front end group is positioned between the small broadband antenna group and the signal processor; the small broadband antenna in the small broadband antenna group is correspondingly connected with the broadband radio frequency receiving front end in the broadband radio frequency receiving front end group one by one; the small broadband antenna group is used for receiving broadband microwave signals in a space; the broadband radio frequency receiving front end group amplifies, filters and down-mixes the broadband microwave signals to intermediate frequency signals and then sends the intermediate frequency signals to the signal processor; and the signal processor is used for performing analog-to-digital conversion on the intermediate frequency signal, converting the intermediate frequency signal into a digital signal and then performing digital signal processing.
Preferably, the small broadband antenna group is located at the top layer and comprises m rows × n columns of the small broadband antennas; the wideband radio frequency receiving front end group is positioned in the middle layer and comprises m rows x n columns of the wideband radio frequency receiving front ends, wherein n > 2.
Preferably, the signal processor is integrated on a PCB substrate through a first solder ball array, and the PCB substrate is used for transmitting signals in the multi-channel small broadband receiver to the outside and providing power for the multi-channel small broadband receiver.
Preferably, each of the wideband rf receiving front ends is integrated on the signal processor by using a second solder ball array.
Preferably, each small broadband antenna is a silicon-based patch antenna and comprises an upper patch, a lower patch and a silicon-based layer; the silicon-based layer comprises a first surface and a second surface opposite to the first surface; the upper patch is located on the first surface, a groove for accommodating the lower patch is formed in the second surface, and the upper patch is opposite to the lower patch in position.
Preferably, each broadband radio frequency receiving front end is obtained by integrating an MMIC chip and a silicon-based heterogeneous structure by adopting a silicon-based passive TSV 3D method.
Preferably, each of the broadband radio frequency receiving front ends includes a first device layer, a second device layer and a third device layer, and the first device layer is close to the small broadband antenna group; the second device layer is located between the first device layer and the third device layer, and the third device layer is close to the signal processor;
the first device layer is used for radio frequency receiving amplification and frequency-selective filtering; the second device layer is used for local oscillator power division, local oscillator amplification and frequency mixing of the broadband microwave signals to the intermediate frequency circuit to obtain intermediate frequency signals; the third device layer is used for amplifying the intermediate frequency signal and then sending the amplified intermediate frequency signal to the signal processor;
and wiring between the first device layer and the second device layer and between the second device layer and the third device layer is finished through the substrate with silicon dioxide as a medium according to preset wiring requirements.
Preferably, a low noise amplifier, a filter bank formed by a plurality of IPD filters, a single-pole multi-throw frequency-selecting switch and a numerical control attenuation chip are integrated on the first device layer;
the second device layer is integrated with a down mixer, a local oscillator amplifier, a power division network, a control chip and a driving chip;
the third device layer is integrated with an intermediate frequency amplifier, a temperature compensation circuit, a circuit and a power supply circuit; meanwhile, each layer is provided with a corresponding power supply voltage stabilization chip for supplying power to a corresponding amplifier;
all chips integrated on the first device layer, the second device layer and the third device layer are bare chips without packaging; the upper layer and the lower layer are connected through a through silicon via;
the lower patch of each small broadband antenna is connected with the low noise amplifier at the front end of each broadband radio frequency correspondingly through a microstrip line.
Preferably, the signal processor includes a first stacked layer and a second stacked layer, the first stacked layer being located above the second stacked layer; the first stacked layer is integrated with an A/D converter and a memory chip;
the second stacking layer is integrated with a logic chip and a CPU;
the first stacking layer and the second stacking layer are stacked up and down by adopting a 3D method based on active TSV, so that the first stacking layer and the second stacking layer are communicated with each other.
Preferably, the upper patch, the silicon-based layer and the first device layer are bonded through nano silver paste.
Compared with the prior art, the invention has at least one of the following advantages:
the invention firstly reduces the area of the receiver to a great extent and realizes the miniaturization of the multi-channel receiver because of the silicon-based high-density three-dimensional integration technology.
Secondly, in order to introduce a silicon-based air cavity to improve the radiation capability of the antenna, the bandwidth of the antenna is widened by a double-layer patch.
The silicon-based antenna has high isolation, the dielectric constant of the silicon-based antenna material is high, the volume of the antenna is smaller, and the isolation under the same antenna interval is higher.
The noise is low, and antenna and low noise are put and are put through microstrip line direct connection, and the loss is little, and antenna noise figure is lower.
The consistency is good, the reliability is high, the silicon substrate processing and the alignment precision between layers is high, and therefore the receiving channels have the advantages of good amplitude-phase consistency, high reliability and the like.
Is easy to expand and can form a larger receiving array by expansion.
Drawings
Fig. 1 is a schematic diagram of a single-channel stacking structure of a multi-channel small wideband receiver according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a single-channel antenna and a broadband microwave receiving stacked structure of a multi-channel small broadband receiver according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a single-channel stacking structure of a multi-channel small wideband receiver signal processor according to an embodiment of the present invention.
Detailed Description
The following describes a multi-channel small wideband receiver according to the present invention in further detail with reference to fig. 1 to 3 and the following detailed description. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Referring to fig. 1 to fig. 3, the present embodiment provides a multi-channel small wideband receiver, including: the system comprises a signal processor, a small broadband antenna group and a broadband radio frequency receiving front end group; the broadband radio frequency receiving front end group is positioned between the small broadband antenna group and the signal processor; the small broadband antenna in the small broadband antenna group is correspondingly connected with the broadband radio frequency receiving front end in the broadband radio frequency receiving front end group one by one; the small broadband antenna group is used for receiving space broadband microwave signals; the broadband radio frequency receiving front end group amplifies, filters and down-mixes the broadband microwave signals received by the antenna to intermediate frequency signals and then sends the intermediate frequency signals to the signal processor; the signal processor is used for carrying out analog-to-digital conversion on the intermediate frequency signal, converting the intermediate frequency signal into a digital signal and then carrying out digital signal processing. Therefore, under the condition of unchanged function, the volume of the conventional signal processing system is greatly reduced.
In this embodiment, the small broadband antenna group is located at the top layer, and includes m rows × n columns of the small broadband antennas; the wideband radio frequency receiving front end group is positioned in the middle layer and comprises m rows x n columns of the wideband radio frequency receiving front ends, wherein n > 2. The signal processor is located on the bottom layer.
The substrates adopted by the small broadband antenna and the broadband radio frequency receiving front end are all silicon materials. The silicon-based material has high dielectric constant, the silicon-based patch antenna has smaller volume compared with the conventional antenna, and the silicon-based patch antenna is easy to integrate.
Preferably, the signal processor is integrated on the PCB substrate 400 through the first solder ball array 304, and the PCB substrate 400 is used for transmitting signals in the multi-channel small broadband receiver to the outside and providing power for the multi-channel small broadband receiver.
Each of the broadband rf receive front ends is integrated with the signal processor using a second ball array 204.
With continued reference to fig. 2, each of the small broadband antennas is a silicon-based patch antenna, and includes an upper patch 101, a lower patch 103, and a silicon-based layer 102; the silicon-based layer 102 comprises a first surface and a second surface opposite to the first surface; the upper patch 101 is located on the first surface, the second surface is provided with a groove 104 for accommodating the lower patch 103, and the upper patch 101 is opposite to the lower patch 102.
The existence of the groove 104 improves the radiation capability of the patch on the silicon-based antenna and greatly improves the gain of the silicon-based antenna.
And each broadband radio frequency receiving front end is obtained by integrating MMIC chips (GaN, GaAs, InP, MEMS and other multifunctional devices) with silicon-based heterogeneous structures by adopting a silicon-based passive TSV 3D method.
Each broadband radio frequency receiving front end comprises a first device layer 201, a second device layer 202 and a third device layer 203, wherein the first device layer 201 is close to the small broadband antenna group; the second device layer 202 is located between the first device layer 201 and the third device layer 203, and the third device layer 203 is close to the signal processor. The first device layer 201 is used for receiving and amplifying broadband radio frequency received by the antenna, pre-selecting filtering and equalizing broadband amplitude to the second device layer 202; the second device layer 202 is configured to perform local oscillation power division and local oscillation amplification, perform down-mixing on the broadband radio frequency signal, and output an intermediate frequency signal to the third device layer 203; the third device layer 203 is configured to amplify the intermediate frequency signal and send the amplified intermediate frequency signal to a subsequent signal processor; meanwhile, each layer is provided with a voltage stabilizer for power supply voltage stabilization, the voltage required by the amplifiers in the first device layer 201, the second device layer 202 and the third device layer 203 is stabilized, and power is supplied to the corresponding amplifiers.
The wiring between the first device layer 201 and the second device layer 202 and between the second device layer 202 and the third device layer 203 are completed through a substrate 205 (including a silicon interposer and a silicon cap) with a silicon dioxide medium according to a preset wiring requirement, and the wiring can be realized by adopting a silicon interposer multilayer wiring manner. The device layers are interconnected by using a Through Silicon Via (TSV) 2011 technology. The mode of multilayer wiring of the silicon adapter plate enables microwave signals in the broadband radio frequency receiving front end to be transversely and longitudinally three-dimensionally propagated according to the paths of chip circuit output, interlayer interconnection, circuit same-layer transmission and interlayer interconnection.
A low noise amplifier 2010, a front-stage single-pole multi-throw switch, an IPD filter bank, a rear-stage single-pole multi-throw switch, a numerical control attenuation chip, and a power chip are sequentially integrated on the first device layer 201. The second device layer 202 is integrated with a down-mixing circuit, a local oscillator power divider, a local oscillator amplifier, a control chip, a driving chip and a voltage stabilizer. The third device layer 203 is integrated with an intermediate frequency analog amplifying circuit and a voltage regulator. The lower patch 103 of each small broadband antenna is connected with the low noise amplifier 2010 of each broadband radio frequency receiving front end correspondingly through a microstrip line.
All chips integrated by the first device layer 201, the second device layer 202 and the third device layer 203 are bare chips without packages, and the bare chips are smaller in size and convenient to integrate. The upper layer and the lower layer are connected through a through silicon via; the lower patch of each small broadband antenna is connected with the low noise amplifier at the front end of each broadband radio frequency correspondingly through a microstrip line.
The IPD filter bank (the IPD filter is an integrated passive device) is composed of a plurality of filters with different frequency bands, the frequency bands of the different filters are seamlessly connected to form a wider frequency band, and the IPD filter bank is characterized by smaller volume. And the silicon-based MEMS filter can be used in the occasions with high requirements on the stop band inhibition of the filter, and the method is characterized in that the method can be realized by directly digging a cavity on the silicon material by adopting the MEMS process without an additional filter, has lower cost and good stop band inhibition performance, and can resist interference.
The upper patch 101 and the silicon-based layer 102, and the silicon-based layer 102 and the first device layer 201 are bonded through nano silver paste. The silicon-based antenna is bonded with the broadband radio frequency receiving front end in an up-down stacking mode through the nano silver paste, and air tightness of the broadband radio frequency receiving front end is guaranteed.
With continued reference to FIG. 3, the signal processor includes a first stacked layer 301 and a second stacked layer 302, the first stacked layer 301 being located above the second stacked layer 302; the first stack layer 301 integrates an a/D converter and a memory chip. The second stack layer 302 is integrated with a logic chip and a CPU. The first stacked layer 301 and the second stacked layer 302 are stacked up and down by using an active TSV-based 3D technology, and the first stacked layer 301 and the second stacked layer 302 communicate with each other by using an active through silicon via 3020.
That is, the memory chip, the logic chip and the signal processing chip are stacked up and down by using the 3D technology based on the active TSV3020, and the logic chip located below allows the upper die (first stacked layer) to communicate with the lower die (second stacked layer) through the active TSV 3020.
Each broadband radio frequency receiving front end is packaged and interconnected with a signal processor through a second solder ball array (BGA)204 on the surface of the silicon wafer on the lowest layer of the broadband radio frequency receiving front end.
A larger scale broadband receiver can be realized by soldering a plurality of m × n (m, n >2) silicon-based small broadband receivers on the PCB substrate 400. The multichannel small broadband receiver provided by the embodiment can be applied to wireless systems such as mobile communication and radar. The supported frequency range is millimeter wave not lower than 3GHz bandwidth, the antenna gain can reach more than 6dBi, the antenna isolation is more than 20dB, the unit spacing can be less than 0.55 wavelength, the requirement of +/-60-degree grating-lobe-free scanning is met, the amplitude consistency is less than 1dB, and the phase consistency is less than 2 degrees.
It should be understood that, the connection between chips or circuits on each functional layer and the connection relationship between devices on each functional layer mentioned herein may be determined according to the functions to be implemented, or may be performed by a pre-designed circuit diagram, and the present invention is not described in detail again.
The silicon-based MEMS three-dimensional heterogeneous technology realizes the integrated design of chips and packaging through high-precision, high-consistency and high-density three-dimensional interconnection, can greatly reduce the volume and weight of a system, and is beneficial to the miniaturization of a receiving system. The method is still in a starting stage in the field of silicon-based heterogeneous high-precision three-dimensional integrated research. Through initial exploration, China makes a breakthrough in a plurality of single-step processes such as GaAs MMIC chip and silicon-based heterogeneous integration, silicon-based Integrated Passive Device (IPD) and TSV integration, multilayer metal rewiring, silicon adapter plate three-dimensional stacking and three-dimensional wafer level packaging. The silicon-based antenna and the silicon-based radio frequency system can be effectively integrated by utilizing a silicon-based MEMS (micro electro mechanical systems) process, the antenna-radio frequency is integrated, and then the integrated level is improved by welding the BGA solder balls onto a PCB (printed circuit board), so that the volumes of the antenna radio frequency system and a receiver are greatly reduced.
Therefore, the multichannel small-sized broadband receiver provided by the embodiment can be realized through a silicon-based high-density three-dimensional integration process, and the multichannel small-sized broadband receiver with a simple structure, a small size and good channel amplitude and phase consistency can be provided. The embodiment adopts silicon-based 3D active and passive vertical integration, has smaller volume and better multi-channel performance,
in the description of the present invention, it is to be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (10)
1. A multi-channel compact wideband receiver, comprising: the system comprises a signal processor, a small broadband antenna group and a broadband radio frequency receiving front end group;
the broadband radio frequency receiving front end group is positioned between the small broadband antenna group and the signal processor;
the small broadband antenna in the small broadband antenna group is correspondingly connected with the broadband radio frequency receiving front end in the broadband radio frequency receiving front end group one by one;
the small broadband antenna group is used for receiving broadband microwave signals in a space;
the broadband radio frequency receiving front end group amplifies, filters and down-mixes the broadband microwave signals to intermediate frequency signals and then sends the intermediate frequency signals to the signal processor;
and the signal processor is used for performing analog-to-digital conversion on the intermediate frequency signal, converting the intermediate frequency signal into a digital signal and then performing digital signal processing.
2. The multi-channel compact wideband receiver of claim 1,
the small broadband antenna group is positioned at the top layer and comprises m rows x n columns of small broadband antennas; the wideband radio frequency receiving front end group is positioned in the middle layer and comprises m rows x n columns of the wideband radio frequency receiving front ends, wherein n > 2.
3. The multi-channel compact broadband receiver of claim 1 wherein the signal processor is integrated with a PCB substrate through a first solder ball array, the PCB substrate being configured to transmit signals within the multi-channel compact broadband receiver to the outside and to provide power to the multi-channel compact broadband receiver.
4. The multi-channel compact wideband receiver of claim 2 wherein each of said wideband radio frequency receive front ends is integrated on said signal processor using a second ball grid array.
5. The multi-channel compact wideband receiver of claim 4 wherein each said compact wideband antenna is a silicon-based patch antenna comprising an upper patch, a lower patch and a silicon-based layer; the silicon-based layer comprises a first surface and a second surface opposite to the first surface; the upper patch is located on the first surface, a groove for accommodating the lower patch is formed in the second surface, and the upper patch is opposite to the lower patch in position.
6. The multi-channel compact wideband receiver of claim 5, wherein each said wideband radio frequency receive front-end is implemented by integrating MMIC chips with silicon-based heterogeneous by 3D method using silicon-based passive TSV.
7. The multi-channel compact wideband receiver of claim 6, wherein each said wideband radio frequency receive front end includes a first device layer, a second device layer, and a third device layer, said first device layer being proximate to said compact wideband antenna group; the second device layer is located between the first device layer and the third device layer, and the third device layer is close to the signal processor;
the first device layer is used for radio frequency receiving amplification and frequency-selective filtering; the second device layer is used for local oscillator power division, local oscillator amplification and frequency mixing of the broadband microwave signals to the intermediate frequency circuit to obtain intermediate frequency signals; the third device layer is used for amplifying the intermediate frequency signal and then sending the amplified intermediate frequency signal to the signal processor;
and wiring between the first device layer and the second device layer and between the second device layer and the third device layer is finished through the substrate with silicon dioxide as a medium according to preset wiring requirements.
8. The multi-channel compact broadband receiver of claim 7, wherein a low noise amplifier, a filter bank of IPD filters, a single-pole multi-throw frequency-selective switch and a digitally controlled attenuator chip are integrated on the first device layer;
the second device layer is integrated with a down mixer, a local oscillator amplifier, a power division network, a control chip and a driving chip;
the third device layer is integrated with an intermediate frequency amplifier, a temperature compensation circuit, a circuit and a power supply circuit; meanwhile, each layer is provided with a corresponding power supply voltage stabilization chip for supplying power to a corresponding amplifier;
all chips integrated on the first device layer, the second device layer and the third device layer are bare chips without packaging; the upper layer and the lower layer are connected through a through silicon via;
the lower patch of each small broadband antenna is connected with the low noise amplifier at the front end of each broadband radio frequency correspondingly through a microstrip line.
9. The multi-channel compact wideband receiver of claim 8,
the signal processor includes a first stacked layer and a second stacked layer, the first stacked layer being located above the second stacked layer; the first stacked layer is integrated with an A/D converter and a memory chip;
the second stacking layer is integrated with a logic chip and a CPU;
the first stacking layer and the second stacking layer are stacked up and down by adopting a 3D method based on active TSV, so that the first stacking layer and the second stacking layer are communicated with each other.
10. The multi-channel small form-factor wideband receiver of claim 9, wherein the top patch and the silicon-based layer are bonded to the first device layer with a nano-silver paste.
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| CN112051551A (en) * | 2020-09-10 | 2020-12-08 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active subarray |
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| US20190036592A1 (en) * | 2016-03-11 | 2019-01-31 | Akoustis, Inc. | FRONT END MODULE FOR 5.2 GHz Wi-Fi ACOUSTIC WAVE RESONATOR RF FILTER CIRCUIT |
| CN206673954U (en) * | 2016-08-01 | 2017-11-24 | 中国电子科技集团公司第三十八研究所 | Multi-chip RF receiving/transmission device based on Digital Microwave composite base plate technology |
| KR20180037556A (en) * | 2016-10-04 | 2018-04-12 | 삼성전자주식회사 | Wireless communication apparatus and controling method therefor |
| CN108879114A (en) * | 2017-05-16 | 2018-11-23 | 华为技术有限公司 | Integrated antenna packages structure and terminal |
| CN108562876A (en) * | 2018-01-31 | 2018-09-21 | 中国电子科技集团公司第三十八研究所 | Broadband low minor lobe simulates multiple-beam array reconnaissance system |
| CN111123211A (en) * | 2019-12-21 | 2020-05-08 | 中国电子科技集团公司第二十研究所 | Light and thin dual-waveband chip type digital sub-array |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112051551A (en) * | 2020-09-10 | 2020-12-08 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active subarray |
| CN112051551B (en) * | 2020-09-10 | 2024-01-02 | 上海无线电设备研究所 | Silicon-based three-dimensional integrated micro radar high-frequency high-power active sub-array |
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