CN111584710A - OTS material, gating unit and preparation method thereof - Google Patents
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- 239000000463 material Substances 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052717 sulfur Inorganic materials 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052711 selenium Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000008020 evaporation Effects 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 230000005284 excitation Effects 0.000 abstract description 7
- 230000007704 transition Effects 0.000 abstract description 7
- 230000009471 action Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 10
- 230000015654 memory Effects 0.000 description 7
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 chalcogenide compound Chemical class 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
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Abstract
The invention relates to an OTS material, a gating unit and a preparation method thereof. The OTS material has a chemical general formula of GaxS1‑x‑yRy. The gate unit includes the OTS material. The gate unit can realize rapid transition from an off state with high resistance to an on state with low resistance under the action of external electric excitation; moreover, when the external electric excitation is removed, the switch can be quickly switched from a conducting low-resistance state to a switching-off high-resistance state; the gate unit has the advantages of high driving current, lower threshold voltage, high starting speed, large switching ratio, good thermal stability and the like.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to an OTS material, a gate unit and a preparation method thereof.
Background
Phase Change Random Access Memory (PCRAM) is a new type of nonvolatile memory, and has become the most competitive next generation memory technology due to its advantages such as high density (scalability), high speed, and low power consumption.
In order to achieve the goal of high density storage, the most popular approach is to use a crossbar array. The crossbar array requires the integration of gates with the gating cells. The role of the gate among them is: under the action of an external electric field, when a threshold voltage is reached, the transition from a high-resistance state to a low-resistance state can be realized, and the gate is opened. When the voltage is lower than the holding voltage, the state can be changed from the low resistance state to the high resistance state, and the gate is turned off. Based on the characteristics, the gate tube can effectively avoid the crosstalk problem caused when the information of the storage unit is read.
Currently, a gate tube capable of realizing three-dimensional integration mainly comprises an oxide diode, an oxide triode, a threshold change switch and the like. However, the gating device made of the material generally has the phenomena of higher threshold voltage and poorer thermal stability. In addition, for new memory devices such as phase change memory, the drive current is required to be at MA/cm2On-state currents of such high magnitude are difficult to achieve with typical gated devices. Therefore, the development of the gate device is currently aimed at achieving a large driving current, a high switching ratio, a low threshold voltage, high fatigue, and high reliability.
Disclosure of Invention
The invention aims to solve the technical problem of providing an OTS material, a gate unit and a preparation method thereof, so as to overcome the defects of low driving current, small switching ratio, high threshold voltage, poor thermal stability and the like of a gate in the prior art.
The invention also provides an OTS material, and the chemical general formula of the material is GaxS1-x-yRyIn the formula 0<x<1 (preferably 0.333)<x<0.667), y is 0 to 0.55, R is an element other than Ga and S.
And R is one or more of As, C, N, Si, Ge, S, Se, Te and Sb.
The material is Ga0.45S0.55、Ga0.45S0.05N0.5Or Ga0.42As0.06S0.52。
The OTS material can realize rapid transition from a high resistance state to a low resistance state when an applied voltage exceeds a threshold voltage, and can transition from the low resistance state to the high resistance state when the voltage is lower than a holding voltage.
The invention also provides a preparation method of the OTS material, which adopts a sputtering method, an evaporation method, a physical vapor phase method, a chemical vapor phase method, a molecular beam epitaxy method, an atomic vapor phase deposition method or an atomic layer deposition method to prepare the OTS material.
The invention also provides a gate unit comprising the OTS material.
The unit includes from bottom to top in proper order: the device comprises a lower electrode layer, an OTS material layer, an upper electrode layer and a lead-out electrode.
The thickness of the upper electrode layer is 10 nm-50 nm.
The thickness of the OTS material layer is 1 nm-100 nm; the thickness of the extraction electrode is 100 nm-500 nm.
The materials of the lower electrode layer, the upper electrode layer and the extraction electrode comprise one or more of metal simple substances W, Pt, Au, Ti, Al, Ag, Cu, Ni and nitrides thereof.
The invention also provides a preparation method of the gate unit, which comprises the following steps:
(1) preparing a lower electrode layer;
(2) preparing a gating material layer on the lower electrode layer in the step (1), wherein the gating material layer is made of an OTS material;
(3) preparing an upper electrode layer on the gating material layer in the step (2);
(4) and (4) preparing an extraction electrode on the upper electrode layer in the step (3).
The preparation method of the lower electrode layer, the gating material layer, the upper electrode layer and the extraction electrode comprises the following steps: physical vapor deposition, chemical vapor deposition, electron beam evaporation, molecular beam epitaxy, or atomic layer deposition.
The upper electrode layer, the lower electrode layer and the gate material layer are integrated with other elements such as a memory cell, a driving circuit and a peripheral circuit through the extraction electrode.
Advantageous effects
The invention is based on GaxS1-x-yRy(0<x<1, y is 0-0.55), can realize the quick transition from the off, high resistance state to the on, low resistance state under the effect of external electric excitation. Moreover, when the external electric excitation is removed, the resistance state can be switched from the on-state, low-resistance state to the off-state, high-resistance stateAnd (4) rapidly converting. The gating unit based on the chalcogenide compound has the advantages of high driving current, lower threshold voltage, high starting speed, large switching ratio, good thermal stability and the like.
Drawings
Fig. 1 is a graph of the threshold switching characteristics, i.e., the current-voltage (I-V) measured under voltage excitation, of a gate cell based on the gate material of the present invention.
Fig. 2 is a graph representing the switching speed of a gate unit based on the gate material of the present invention.
Fig. 3 is a graph of fatigue characteristics of a gating cell based on the gating material of the present invention.
Figure 4 is an XRD pattern based on different temperatures of the gated material of the present invention.
Detailed Description
The invention will be further illustrated with reference to the following specific examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should be understood that various changes or modifications of the present invention may be made by those skilled in the art after reading the teaching of the present invention, and such equivalents may fall within the scope of the present invention as defined in the appended claims. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
Example 1
First, a lower electrode layer is prepared by any one of physical vapor deposition, chemical vapor deposition, electron beam evaporation and molecular beam epitaxy, and in this embodiment, the lower electrode layer is preferably prepared by chemical vapor deposition, and the material of the lower electrode layer may be, for example, any one of W, TiN, Pt and Al. In this embodiment, the material of the lower electrode layer is preferably W, and the diameter of the prepared columnar W lower electrode layer is 190nm, and the height is 500 nm.
Then, a gate material layer is deposited on the lower electrode layer, and the preparation method can adopt any one of an atomic layer deposition method, a physical vapor deposition method and a chemical vapor deposition method. As an example, in the present embodiment, magnetron sputtering is preferably used for the W lower electrode layerMethod of sputtering preparation of the Ga using a GaS alloy target produced by Pioneer materials Co0.45S0.55The material layer has the process parameters that the background vacuum is 3.0 × 10-4Pa, sputtering gas flow (Ar) of 20sccm, alloy target radio-frequency sputtering power of 35W, substrate temperature of 25 ℃, sputtering time of 5min, and thickness of the prepared film of about 6 nm.
Second, in Ga0.45S0.55Preparing the upper electrode layer TiN on the gating material layer by adopting a preparation method of the same lower electrode layer, and using a Ti target and N2Preparing the upper electrode layer with the process parameters that the background vacuum is 3.0 × 10-4Pa, sputtering gas flow rate (Ar) of 11sccm, sputtering gas flow rate (N)2) 10.8sccm, the RF sputtering power of the alloy target is 95W, the substrate temperature is 25 ℃, the sputtering time is 20min, and the thickness of the prepared film is about 20 nm.
Finally, an upper extraction electrode is prepared on the upper electrode layer by adopting a sputtering method, the preferred material in the embodiment is Al, the upper extraction electrode is prepared by sputtering an Al target, and the technological parameters are that the background vacuum is 3.0 × 10-4Pa, sputtering gas flow (Ar) of 20sccm, alloy target radio frequency sputtering power of 55W, substrate temperature of 25 ℃, sputtering time of 60min, and thickness of the prepared film of 200 nm.
Ga-based in the present example0.45S0.55The gate elements of the material layer were tested for electrical performance, including characterization of current-voltage (I-V), switching speed and fatigue characteristics. The I-V test curve of the gate unit under voltage excitation is shown in fig. 1. The initial state is known as the high-impedance off-state, and as the voltage is continuously increased to a certain range, the current is rapidly increased by 105To 106The voltage value at which the gating cell turns on, referred to as the turn-on voltage or threshold voltage, increases slowly as the applied voltage continues to increase. When the reverse voltage is continuously applied to a zero value, the gating unit relaxes back to the off state of high resistance, thereby completing one on-off operation. In addition, as can be seen from different curves, the gating unit can at least reach the driving current of milliampere magnitude, so that the gating unit can be used as a gating switch of various novel memories.
Based on Ga0.45S0.55The switching speed test of the gate unit is shown in fig. 2, the turn-on time of the gate unit is less than 40ns, and the turn-off time of the gate unit is less than 200ns, so that the gate operation can be provided for the high-speed storage unit. The specific fatigue characteristics are shown in fig. 3, at a starting voltage of 6V,5 μ s; under the test condition of 0.5V of turn-off voltage and 5 mu s of turn-off voltage, the cycle number of the unit can reach 107And the magnitude is basically satisfied with the characteristic requirement of the memory cell.
Based on Ga0.45S0.55The XRD test of the gating unit is shown in figure 4, the gating unit still has no crystallization at 500 ℃, has very good thermal stability and can completely meet the requirements of a back-end process.
In conclusion, the Ga-based compositions of the present inventionxS1-x-yRy(0<x<1, y is 0-0.55), the gating material, the gating unit and the preparation method thereof have the advantages that:
1. under the action of external electric excitation, the gating material can smoothly realize multiple instantaneous transitions between a high-resistance state and a low-resistance state, the high-resistance state represents a closed state, the low-resistance state represents an open state, and the on-off of the device is controlled through the transition between the high-resistance state and the low-resistance state, so that the gating material can be used as a gating switch of various novel memories.
2. When the material is used as a gating medium of a gate, a driving current with a large milliampere magnitude can be realized, and the potential of a high-performance gating switch is realized.
3. The gating unit based on the material has higher crystallization temperature, and is beneficial to improving the reliability of the gating unit.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. An OTS material is provided, which comprises a base material,characterized in that the chemical general formula of the material is GaxS1-x-yRy0.333 in the formula<x<0.667, y is 0 to 0.55, R is an element other than Ga and S.
2. The material of claim 1, wherein R is one or more of As, C, N, Si, Ge, S, Se, Te and Sb.
3. The material of claim 1, wherein the material is Ga0.45S0.55、Ga0.45S0.05N0.5Or Ga0.42As0.06S0.52。
4. A method of manufacturing an OTS material as claimed in claim 1, wherein the OTS material is manufactured by sputtering, evaporation, physical vapor phase, chemical vapor phase, molecular beam epitaxy, atomic vapor deposition or atomic layer deposition.
5. A gate cell, characterized in that the cell comprises the OTS material of claim 1.
6. The unit according to claim 5, characterized in that it comprises, in sequence from bottom to top: the device comprises a lower electrode layer, an OTS material layer, an upper electrode layer and a lead-out electrode.
7. The cell of claim 6, wherein the upper electrode layer has a thickness of 10nm to 50 nm; the thickness of the OTS material layer is 1 nm-100 nm.
8. The cell of claim 6, wherein the extraction electrode has a thickness of 100nm to 500 nm.
9. The unit of claim 6, wherein the material of the lower electrode layer, the upper electrode layer and the extraction electrode comprises one or more of metal simple substances of W, Pt, Au, Ti, Al, Ag, Cu, Ni and nitrides thereof.
10. A method of making the cell of claim 5, comprising:
(1) preparing a lower electrode layer;
(2) preparing a gating material layer on the lower electrode layer in the step (1), wherein the gating material layer is made of an OTS material;
(3) preparing an upper electrode layer on the gating material layer in the step (2);
(4) and (4) preparing an extraction electrode on the upper electrode layer in the step (3).
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1286115A (en) * | 1968-09-24 | 1972-08-23 | Energy Conversion Devices Inc | Improvements in or relating to current controlling devices |
| US20080113464A1 (en) * | 2006-10-10 | 2008-05-15 | Savransky Semyon D | Asymmetric chalcogenide device |
| US20120225532A1 (en) * | 2011-03-03 | 2012-09-06 | Tel Epion Inc. | Method for controlling a resistive property in a resistive element using a gas cluster ion beam |
| US20150207066A1 (en) * | 2014-01-17 | 2015-07-23 | Sony Corporation | Switch device and storage unit |
| US20160013246A1 (en) * | 2013-03-15 | 2016-01-14 | Institute Of Microelectonics, Chinese Academy Of Sciences | Gating device cell for cross array of bipolar resistive memory cells |
| US20160336378A1 (en) * | 2014-01-17 | 2016-11-17 | Sony Corporation | Switch device and storage unit |
| CN108110026A (en) * | 2017-12-20 | 2018-06-01 | 中国科学院上海微系统与信息技术研究所 | A kind of Ge-Te-Al-As threshold switches material, threshold switching device unit and preparation method thereof |
| CN109638153A (en) * | 2018-12-06 | 2019-04-16 | 华中科技大学 | A kind of gating tube material, gating tube device and preparation method thereof |
| CN109716507A (en) * | 2016-10-04 | 2019-05-03 | 索尼半导体解决方案公司 | Switching device, storage equipment and storage system |
| US10497867B1 (en) * | 2018-07-02 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer structure to increase crystalline temperature of a selector device |
| US20200052036A1 (en) * | 2017-05-01 | 2020-02-13 | Sony Semiconductor Solutions Corporation | Selection device and storage apparatus |
-
2020
- 2020-04-10 CN CN202010277520.2A patent/CN111584710B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1286115A (en) * | 1968-09-24 | 1972-08-23 | Energy Conversion Devices Inc | Improvements in or relating to current controlling devices |
| US20080113464A1 (en) * | 2006-10-10 | 2008-05-15 | Savransky Semyon D | Asymmetric chalcogenide device |
| US20120225532A1 (en) * | 2011-03-03 | 2012-09-06 | Tel Epion Inc. | Method for controlling a resistive property in a resistive element using a gas cluster ion beam |
| US20160013246A1 (en) * | 2013-03-15 | 2016-01-14 | Institute Of Microelectonics, Chinese Academy Of Sciences | Gating device cell for cross array of bipolar resistive memory cells |
| US20150207066A1 (en) * | 2014-01-17 | 2015-07-23 | Sony Corporation | Switch device and storage unit |
| US20160336378A1 (en) * | 2014-01-17 | 2016-11-17 | Sony Corporation | Switch device and storage unit |
| CN109716507A (en) * | 2016-10-04 | 2019-05-03 | 索尼半导体解决方案公司 | Switching device, storage equipment and storage system |
| US20200052036A1 (en) * | 2017-05-01 | 2020-02-13 | Sony Semiconductor Solutions Corporation | Selection device and storage apparatus |
| CN108110026A (en) * | 2017-12-20 | 2018-06-01 | 中国科学院上海微系统与信息技术研究所 | A kind of Ge-Te-Al-As threshold switches material, threshold switching device unit and preparation method thereof |
| US10497867B1 (en) * | 2018-07-02 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-layer structure to increase crystalline temperature of a selector device |
| CN109638153A (en) * | 2018-12-06 | 2019-04-16 | 华中科技大学 | A kind of gating tube material, gating tube device and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| DAYOON LEE等: "Highly reliable threshold switching behavior of amorphous Ga2Te3 films deposited by RF sputtering", 《APPLIED PHYSICS EXPRESS》 * |
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