CN111584332A - Electron bombardment imaging photoelectric device and high-speed camera - Google Patents
Electron bombardment imaging photoelectric device and high-speed camera Download PDFInfo
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- 238000003384 imaging method Methods 0.000 title claims abstract description 107
- 239000004065 semiconductor Substances 0.000 claims abstract description 85
- 238000010894 electron beam technology Methods 0.000 claims abstract description 74
- 230000003287 optical effect Effects 0.000 claims abstract description 37
- 238000006243 chemical reaction Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 17
- 230000001133 acceleration Effects 0.000 claims description 16
- 230000005540 biological transmission Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 229910010293 ceramic material Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000005684 electric field Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims 8
- 230000002093 peripheral effect Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000004298 light response Effects 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
The invention relates to the technical field of photoelectric imaging devices, and discloses an electron bombardment imaging type photoelectric device and a high-speed camera, wherein the electron bombardment imaging type photoelectric device comprises: the vacuum vessel is provided with an optical input window, and the vacuum vessel is internally provided with: the electron beam scanning device comprises a photocathode, an accelerating system, a modulating system, a scanning system and a potential equipotential region, and further comprises a semiconductor imaging system which is used for collecting and imaging the deflected electron beam and amplifying the image information of the electron beam with certain gain. The electron bombardment imaging type photoelectric device can realize the optical image enhancement function with certain magnification, can further improve the resolution ratio, the signal-to-noise ratio and other key parameters of the photoelectric imaging device, and can further reduce the volume and the weight of a high-speed camera taking the photoelectric imaging device as a core.
Description
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to an electron bombardment imaging type photoelectric device and a high-speed camera, which utilize an electron bombardment semiconductor device to collect and process images.
Background
The photoelectric imaging device is an electric vacuum imaging detection device, mainly composed of a photoelectric conversion component, an electron beam modulation component, an electron beam scanning component and an electron beam image display component, wherein the most representative is a stripe image converter. The main function of the image-variable tube photoelectric imaging device is to convert an optical signal emitted by a detection target into a space electron beam signal, the electron beam signal is accelerated and focused in an electron beam modulation component, and then the electron beam is scanned by an electron beam scanning component, so that electron beams generated at different moments move to different positions of an electron beam image display component, thereby realizing the space-time conversion of an optical image, and analyzing the intensity information and the like of the signal light signal at different moments and different space positions by acquiring data at different positions of the image.
The image-variable tube photoelectric imaging device has the characteristics of wide detection spectrum range, high spectral response sensitivity, high time resolution, high spatial resolution and the like, and is widely applied to various fields of biomedical research, material science research, nuclear physics research, geographic information and the like.
At present, a zoom tube type photoelectric imaging device mainly realizes space-time conversion of an optical signal and then outputs the optical signal in an optical signal mode, so that an electron beam image display part in the zoom tube type photoelectric imaging device generally adopts a fluorescent screen, when a high-energy electron beam bombards fluorescent powder covered on the surface of the fluorescent screen, the fluorescent powder can emit light in a visible light wave band and is turned off after a period of time (afterglow), and a subsequent image acquisition system has enough time to acquire a fluorescent screen display image as shown in fig. 3.
Therefore, as shown in fig. 1, the high-speed camera based on the current image converter type photoelectric imaging device generally comprises: the device comprises a photoelectric imaging device, an image intensifier, a high-low voltage power supply, a scanning electric control system, a front end input slit optical system, an industrial control module, a rear end light cone coupling CCD recording system and the like. The image intensifier and the fluorescent screen adopt an optical coupling mode to realize the function of intensifying the image displayed on the fluorescent screen, the CCD is used for collecting the image displayed on the image intensifier, the high-low voltage power supply supplies power to the working electrode of the photoelectric imaging device to ensure that the photoelectric imaging device can work normally, and the scanning electric control system realizes the function of time-space conversion of the photoelectric imaging device. At present, the main components of the high-speed camera are shown in fig. 1, wherein the coupling structure between the photoelectric imaging device and the CCD is shown in fig. 2.
The image intensifier used in high-speed cameras is basically an electric vacuum device based on a micro-channel plate (MCP) at present, and the high gain of the MCP to electrons is mainly used for realizing the intensity enhancement of weak optical images. The use of this device in a high speed camera can degrade the performance of the high speed camera from several aspects:
firstly, the device generates noise electrons due to self dark emission, particle feedback and other reasons when in normal work, and the noise electrons are displayed and output by an optical image in a visible light wave band after electron multiplication is realized by MCP, so that the noise image and a signal image are collected together in subsequent image collection, and the integral signal-to-noise ratio of the high-speed camera is reduced;
secondly, because the MCP is a micropore structure, the size of the aperture of the MCP determines that the whole image intensifier also has spatial resolution which is larger than the aperture numerical value of the micropore, and the integral resolution of the high-speed camera is reduced;
thirdly, after the image intensifier is used in the high-speed camera, a certain form of optical coupling system needs to be used between the fluorescent screen and the image intensifier, and a certain form of optical coupling system also needs to be used between the image intensifier and the CCD device, and the coupling efficiency of a plurality of sets of optical coupling systems cannot reach 100%, so that the optical signals are inevitably subjected to the adverse effects of strength reduction, image distortion and the like, and the overall performance of the high-speed camera is reduced.
Fourthly, because the image intensifier has certain space size, corresponding optical coupling system also can occupy certain space volume, consequently use the image intensifier must increase high-speed camera overall dimension and volume in high-speed camera, be unfavorable for high-speed camera miniaturization and portable characteristic to restrict its application in special fields.
Disclosure of Invention
The invention provides an electron bombardment imaging type photoelectric device and a high-speed camera, wherein a semiconductor device is used for replacing an electron bombardment imaging type photoelectric imaging device of a fluorescent screen, an optical image enhancement function with a certain multiplying power can be realized, the resolution ratio and the signal-to-noise ratio parameter of the photoelectric imaging device can be further improved, the volume and the weight of the high-speed camera can be reduced, and finally the photoelectric imaging device can provide more accurate original electron beam image data for a subsequent data processing system.
The invention provides an electron bombardment imaging type photoelectric device, which comprises: the vacuum vessel is provided with an optical input window, and the vacuum vessel is internally provided with:
a photocathode for receiving photons and converting the photons into electrons to form an electron beam;
an acceleration system for accelerating the electron beam;
the modulation system is used for changing the motion track of the accelerated electron beam and realizing the focusing of the electron beam;
the scanning system is used for adjusting the spatial position of the focused electron beam, and the scanning system utilizes a variable electric field or a variable magnetic field to perform offset motion vertical to the axial direction on the focused electron beam;
the potential equipotential region is an isoelectric region and is used for realizing an electron drift region with sufficient drift amount of electrons in the direction vertical to the axial direction and realizing free drift of electron beam image information of offset motion;
the device also comprises a semiconductor imaging system which is used for collecting and imaging the shifted electron beams and amplifying the image information of the electron beams with certain gain.
The semiconductor imaging system includes: the electronic imaging device comprises a semiconductor device, a vacuum electric transmission component and a signal processing electronic component, wherein the semiconductor device and the vacuum electric transmission component are arranged in a vacuum container, the signal processing electronic component is arranged outside the vacuum container, electron beams after spatial position modulation bombard the semiconductor device to enable the interior of the semiconductor device to generate carriers with certain intensity, the number of the carriers is larger than that of the carriers which are generated by a photoelectric cathode to convert photons into electrons, the electron beams bombard the semiconductor device and then output electronic signals corresponding to each imaging unit, and the electronic signals corresponding to each imaging unit output by the semiconductor device are output to the signal processing electronic component through the vacuum electric transmission component to be further processed.
The Semiconductor device is a CCD (charge coupled device), a CMOS (Complementary Metal Oxide Semiconductor), an APD (Avalanche photodiode) or a device capable of realizing photoelectric imaging, the vacuum electrical transmission member is made of a ceramic material, a glass material or a Metal material, and the vacuum electrical transmission member includes a transmission line for outputting a signal of the Semiconductor device.
The vacuum container is formed by glass, ceramic and metal materials together, the optical input window is made of the glass materials, and the ceramic materials and the metal materials together form the circumferential wall of the vacuum container;
the optical input window is in a plane structure or a curved surface structure, and is connected with the vacuum container in a high-frequency sealing mode, a high-temperature heat sealing mode or an indium sealing mode.
Different voltage values are applied to the acceleration system and the photoelectric cathode, and the electron beam emitted by the photoelectric cathode is accelerated by utilizing the voltage difference between the acceleration system and the photoelectric cathode, so that the moving speed of the electron beam reaches the order of magnitude close to the light speed in picosecond or nanosecond time, the acceleration system has a larger duty ratio, and the acceleration system is a single electrode or a combination of a plurality of electrodes.
The semiconductor device is arranged in a vacuum container through an electrode vacuum passing component, the electrode vacuum passing component comprises an electrode conversion electrode array and a substrate, the electrode conversion electrode array is fixedly arranged on the substrate and comprises a plurality of electrode conversion electrodes, the electrode conversion electrodes are of a male-female head structure, the part connected with the semiconductor device is of a female head structure, the size and the shape of the electrode conversion electrodes are precisely matched according to the shape and the size of an output electrode of the semiconductor device, and the electrode conversion electrode array is also precisely distributed according to the specific arrangement of the output electrode of the semiconductor device.
A high-speed camera comprises the electron bombardment imaging type photoelectric device.
Compared with the prior art, the invention has the beneficial effects that:
the invention can realize the optical image enhancement function with a certain magnification, can further improve the resolution and the signal-to-noise ratio of the photoelectric imaging device, and can further reduce the volume and the weight of the high-speed camera, and finally the electron bombardment imaging type photoelectric device can provide more accurate original electron beam image data for a subsequent data processing system.
Drawings
Fig. 1 is a block diagram of a system of a general high-speed camera according to the background art of the present invention.
Fig. 2 is a schematic diagram of a coupling structure between a photoelectric imaging device and a CCD in a general high-speed camera according to the background art of the present invention.
Fig. 3 is a schematic diagram of a structural principle of a photoelectric imaging device in a general high-speed camera according to the background art of the present invention.
FIG. 4 is a schematic structural diagram of an electron bombardment imaging type photoelectric device provided by the invention.
Fig. 5 is a block diagram of the system of the high-speed camera provided by the invention.
FIG. 6 is a vacuum drawing structure diagram of the electron bombardment imaging type photoelectric device semiconductor device provided by the present invention.
FIG. 7 is a structural diagram of an electrode over-vacuum component of a semiconductor device of an electron bombardment imaging type photoelectric device provided by the invention.
FIG. 8 is a cross-sectional view of the coupling between the electron bombardment imaging type photoelectric device semiconductor device electrode vacuum-passing component and the electron bombardment imaging type photoelectric device vacuum wall provided by the invention.
FIG. 9 is a cross-sectional view of an over-vacuum structure of a semiconductor device of an electron bombardment imaging type photoelectric device provided by the invention.
Description of reference numerals:
the device comprises a 1-photoelectric imaging device vacuum wall, a 2-semiconductor device, a 2-1-semiconductor device main body part, a 2-2-semiconductor device signal output line array, a 3-electrode vacuum passing part, a 3-1-electrode conversion pole array, a 3-2-substrate and a 4-image acquisition and processing part.
Detailed Description
An embodiment of the present invention will be described in detail below with reference to fig. 4-9, but it should be understood that the scope of the present invention is not limited to the embodiment.
As shown in fig. 4, an electron bombardment imaging type photoelectric device provided by an embodiment of the invention includes: the vacuum container is composed of glass, ceramic and metal materials, the glass material is used as an optical input window, and the ceramic material and the metal material jointly form the wall of the vacuum container; preparing a photocathode for receiving photons and converting the photons into electrons on the inner surface of the glass; an acceleration system for accelerating the electron beam; the modulation system is used for realizing the modulation of the motion trail of the electron beam; a scanning system for modulating the spatial position of the modulated electron beam; a semiconductor imaging system for collecting and imaging the electron beam; a potential equipotential region for realizing free drift of the electron beam; the acceleration system, the modulation system and the scanning system are arranged in the vacuum container; the semiconductor imaging system comprises a semiconductor electron beam collecting part and a corresponding image output part, wherein the semiconductor electron beam collecting part is also arranged in the vacuum container.
The optical input window material can be made of materials such as quartz materials, magnesium fluoride materials, borosilicate glass and the like, or optical components derived from optical fiber panels and the like prepared from related materials. The shape of the optical input window may be a planar structure, a curved structure, or the like. The input window and the vacuum tube body adopt the modes of high-frequency sealing, high-temperature heat sealing, indium sealing and the like.
The photocathode can be ultraviolet light response photocathode, visible light response photocathode, infrared light response photocathode and the like.
The acceleration system and the photocathode apply different voltage values, and the voltage difference between the acceleration system and the photocathode is utilized to accelerate electron beams emitted by the photocathode, so that the moving speed of the electron beams can reach the order of magnitude close to the light speed in a short time (picosecond or nanosecond order). The acceleration system is required to have a larger duty ratio so that more signal electrons can pass through the system, thereby ensuring the imaging quality of the photoelectric imaging device. The accelerating system can be a single electrode or a combination of a plurality of electrodes. The modulation system is used for changing the motion track of the electron beam and realizing the focusing of the electron beam so as to realize higher space-time resolution of the photoelectric imaging device. The scanning system mainly utilizes a variable electric field or a variable magnetic field to carry out offset motion vertical to the axial direction on the modulated electron beam, thereby realizing the space-time conversion of the photoelectric imaging device and embodying the high time resolution of the photoelectric imaging device. The equipotential region is an electron drift region for realizing sufficient drift amount of electrons in the direction perpendicular to the axial direction, and the region is an isoelectric region, and after the deflected electron beam passes through the sub-region, the electron beam can move to the edge of the imaging system.
The semiconductor imaging system is mainly used for collecting electron beam image information, amplifying the image with certain gain and outputting the image. The imaging system mainly comprises three parts: the electron beam with high energy bombards the semiconductor device to generate carriers with corresponding intensity, and the number of the carriers generated in the semiconductor device is larger than the number of the photoelectrons generated by the photocathode due to the characteristics of the semiconductor device, so that the amplification function of the original photoelectron signal is realized, and then the function of the semiconductor device is continuously realized to output corresponding electronic signals. Since the photoelectrons can only exist in the vacuum environment, the semiconductor device is also placed in the vacuum environment. The vacuum electric transmission component is used for outputting electronic signals generated by each imaging unit of the semiconductor device to the signal processing electronic component, and the component is also used as a part of the vacuum cavity to ensure the vacuum environment in the photoelectric imaging device. The signal processing electronics is customized to the choice of semiconductor device, and is a common technique.
The semiconductor device can be a device which can realize photoelectric imaging or detection functions, such as CCD, CMOS, APD and the like.
The vacuum electric transmission component is made of a ceramic material or a glass material and a metal material, and comprises a transmission line structure for outputting signals of the semiconductor device.
The semiconductor device may be independently fixed to a dedicated fixing member in the stripe-related tube, or may be fixed to the above-mentioned vacuum electricity transmission member. Either way of attachment ensures a tight link between the semiconductor device and the signal output line structure of the vacuum electrical transmission member.
The electron bombardment semiconductor device imaging type photoelectric imaging device is used for detecting optical signals with short duration, and outputting detection images after intensity enhancement is carried out on the optical signals. The photoelectric imaging device directly uses the semiconductor device to realize the acquisition and multiplication output of the electron beam image, greatly simplifies the structure of the high-speed camera under the condition of ensuring the optical gain, and reduces the performance loss of the high-speed camera in the assembling process, thereby leading the high-speed camera to be capable of greatly reflecting the performance of the electron bombardment imaging type photoelectric device.
The imaging type photoelectric imaging device of the electron bombardment semiconductor device has the basic functions of the traditional photoelectric imaging device: photoelectric conversion of photon signals; the electron beam signal acceleration, focusing and deflection, and the electron beam pattern display function, so the structural block diagram of the electron bombardment semiconductor device imaging photoelectric imaging device disclosed by the invention is shown in fig. 4, which comprises a photoelectric conversion part, an electron beam modulation system, an electron beam scanning system, a semiconductor device, and a signal acquisition and processing system. The photoelectric conversion component realizes the linear conversion of target light into an electron beam signal; the electron beam debugging system realizes the functions of accelerating, focusing and the like of the electron beam signals; the electron beam scanning system realizes the function of regulating and controlling the position of the electron beam in the direction vertical to the axial direction of the photoelectric imaging device, thereby realizing the function of time-space conversion of the photoelectric imaging device; the semiconductor device realizes the functions of collecting, electron multiplying, outputting and the like of electron beam images; and finally, carrying out signal acquisition and processing on the image formed by the semiconductor device through a signal acquisition and processing system, and finally presenting a detection imaging result of the high-speed camera.
In order to meet the requirement that the interior of the photoelectric imaging device must be in a high vacuum environment, the semiconductor device must also be placed in the high vacuum environment inside the photoelectric imaging device, but simultaneously, imaging signals of the semiconductor device need to be transmitted to the outside of the stripe phase change pipe for image acquisition and processing, and the semiconductor device must be fixed and signal output by using a corresponding over-vacuum structure. As the semiconductor device has the characteristic of multi-stage signal output lines, the over-vacuum structure of the electron bombardment imaging type photoelectric device semiconductor device is shown in FIG. 6. The vacuum wall 1 of the photoelectric imaging device is precisely sealed with the electrode over-vacuum component 3 to ensure a high vacuum environment in the photoelectric imaging device, a multi-signal electrode of the semiconductor device 2 is connected with the electrode over-vacuum component substrate 3 to prefabricate an electrode conversion electrode array, so that the semiconductor device is fixed and imaging signals of the semiconductor device are transmitted, the image acquisition and processing component 4 acquires and processes data of an image of the semiconductor device, and finally a detection image of the photoelectric imaging device is presented.
The structure of the electrode vacuum-passing part 3 is shown in fig. 7, and mainly comprises a substrate 3-2 and an electrode switching electrode array 3-1, wherein the electrode switching electrode is of a male-female head structure, the part connected with the semiconductor device is of a female head structure, and the size and the shape of the electrode switching electrode are precisely designed according to the shape and the size of an output electrode of the semiconductor device. The electrode switching electrode array is also designed and prepared in a precise distribution mode according to the specific arrangement of the output electrodes of the semiconductor device.
The cross section of the electrode over vacuum component 3 welded with the vacuum wall of the photoelectric imaging device is shown in FIG. 8, and the electrode over vacuum component and the welding part between the electrode over vacuum component and the vacuum wall can both realize less than 1e-12Pa·m3Leak rate of/s, thereby ensuring lightVacuum environment of the electrophotographic device.
Fig. 9 is a cross-sectional view of an assembly structure of the semiconductor device and the electrode vacuum-passing part 3, wherein a signal output line array 2-2 of the semiconductor device is precisely matched with an electrode switching electrode array 3-1 of the electrode vacuum-passing part 3, so that the main body part 2-1 of the semiconductor device is precisely positioned in the photoelectric imaging device.
A high-speed camera, as shown in FIG. 5, comprises the electron bombardment imaging type photoelectric device.
The invention provides an electron bombardment imaging type photoelectric imaging device which uses semiconductor devices such as CMOS (complementary metal oxide semiconductor) to replace a fluorescent screen, aiming at the problems that when optical images output by the fluorescent screen of the conventional photoelectric imaging device are output, the integral performance of a high-speed camera is reduced and the integral volume of the high-speed camera is increased due to the use of an image intensifier and a related optical coupling system of the high-speed camera. The electron bombardment imaging type photoelectric imaging device can realize the optical image enhancement function with certain magnification, can further improve the resolution ratio, the signal to noise ratio and other key parameters of the photoelectric imaging device, can further reduce the volume and the weight of a high-speed camera, and finally can provide more accurate original electron beam image data for a subsequent data processing system.
In order to collect the optical image output by the fluorescent screen of the image-changing tube type photoelectric imaging device, the high-speed camera reduces the overall performance of the high-speed camera, increases the overall volume of the high-speed camera and the like by using the image intensifier and the related optical coupling system. Therefore, a semiconductor device is used for replacing a fluorescent screen, an electron beam after modulation and scanning bombards an imaging unit of the semiconductor device in a higher energy state (the electron energy mainly depends on the electron acceleration voltage of a photoelectric imaging device), so that an avalanche effect is generated inside the imaging unit to generate corresponding more carriers, an electron multiplication function is realized, and then data output and image output are carried out on each imaging unit after electron multiplication through a corresponding signal reading circuit.
This structure may yield the following benefits:
firstly, the electron multiplication gain of the imaging unit of the semiconductor device is closely related to the electron energy, and the structure can completely realize the purpose of having the same optical gain with the image intensifier;
secondly, the imaging unit of the semiconductor device directly outputs the electron beam image without multiple photoelectric conversions, so that the accuracy of original data can be ensured when the imaging unit outputs the image for post-processing;
thirdly, the semiconductor devices have smaller size and volume, and the introduction of the device can reduce the volume and the weight of the high-speed camera;
fourthly, corresponding refrigeration cooling treatment is carried out on the semiconductor device in the using process, the noise of the semiconductor imager can be greatly reduced, and therefore the overall performance of the high-speed camera is improved.
The above disclosure is only for a few specific embodiments of the present invention, however, the present invention is not limited to the above embodiments, and any variations that can be made by those skilled in the art are intended to fall within the scope of the present invention.
Claims (7)
1. An electron-bombardment imaging-type optoelectronic device comprising: the vacuum vessel is provided with an optical input window, and the vacuum vessel is internally provided with:
a photocathode for receiving photons and converting the photons into electrons to form an electron beam;
an acceleration system for accelerating the electron beam;
the modulation system is used for changing the motion track of the accelerated electron beam and realizing the focusing of the electron beam;
the scanning system is used for adjusting the spatial position of the focused electron beam, and the scanning system utilizes a variable electric field or a variable magnetic field to perform offset motion vertical to the axial direction on the focused electron beam;
the potential equipotential region is an isoelectric region and is used for realizing an electron drift region with sufficient drift amount of electrons in the direction vertical to the axial direction and realizing free drift of electron beam image information of offset motion;
the electron beam deflection device is characterized by further comprising a semiconductor imaging system which is used for collecting and imaging the deflected electron beam and amplifying the image information of the electron beam with certain gain.
2. The electron-bombarded imaging-type optoelectronic device of claim 1, wherein the semiconductor imaging system comprises: the semiconductor device (2) and the vacuum electricity transmission component are arranged in a vacuum container, the signal processing electronic component is arranged outside the vacuum container, electron beams after spatial position modulation bombard the semiconductor device (2) to enable carriers with certain intensity to be generated inside the semiconductor device (2), the number of the carriers is larger than the number of photons converted into electrons by a photoelectric cathode, the electron beams bombard the semiconductor device (2) and then output electronic signals corresponding to all imaging units, and the electronic signals corresponding to all imaging units output by the semiconductor device (2) are output to the signal processing electronic component through the vacuum electricity transmission component for further signal processing.
3. The electron-bombarded imaging-type optoelectronic device according to claim 2, wherein the semiconductor device is a CCD, CMOS, APD or device capable of realizing optoelectronic imaging, and the vacuum electrical transmission member is made of a ceramic material, a glass material or a metal material, and includes a transmission line for outputting a signal of the semiconductor device.
4. The electron-bombarded imaging-type optoelectronic device of claim 1, wherein the evacuated container is formed from a combination of glass, ceramic, and metallic materials, the optical input window is formed from a glass material, and the ceramic material and the metallic material together form a peripheral wall of the evacuated container;
the optical input window is in a plane structure or a curved surface structure, and is connected with the vacuum container in a high-frequency sealing mode, a high-temperature heat sealing mode or an indium sealing mode.
5. The electron-bombarded imaging-type optoelectronic device according to claim 1, wherein the acceleration system and the photocathode are applied with different voltage values, and the electron beam emitted from the photocathode is accelerated by using the voltage difference between the two, so that the moving speed of the electron beam reaches the order of magnitude close to the speed of light in picoseconds or nanoseconds, the acceleration system has a larger duty cycle, and the acceleration system is a single electrode or a combination of a plurality of electrodes.
6. The electron-bombarded imaging-type optoelectronic device according to claim 2, wherein the semiconductor device (2) is disposed in a vacuum vessel by an electrode over vacuum unit (3), the electrode over vacuum unit (3) includes an electrode switching pole array (3-1) and a substrate (3-2), the electrode switching pole array (3-1) is fixedly disposed on the substrate (3-2), the electrode switching pole array (3-1) includes a plurality of electrode switching poles, the electrode conversion electrode is of a male-female head structure, the part connected with the semiconductor device (2) is of a female head structure, the size and the shape of the electrode array are precisely designed according to the shape and the size of the output electrode of the semiconductor device, and the electrode switching electrode array (3-1) is also precisely designed according to the specific arrangement of the output electrode of the semiconductor device.
7. A high speed camera comprising an electron bombarded imaging type optoelectronic device according to any one of claims 1 to 6.
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