CN111569964B - Microfluidic device and preparation method thereof - Google Patents
Microfluidic device and preparation method thereof Download PDFInfo
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- CN111569964B CN111569964B CN202010439553.2A CN202010439553A CN111569964B CN 111569964 B CN111569964 B CN 111569964B CN 202010439553 A CN202010439553 A CN 202010439553A CN 111569964 B CN111569964 B CN 111569964B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
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- B01L2300/0819—Microarrays; Biochips
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Abstract
The invention relates to a microfluidic device and a preparation method thereof, belonging to the technical field of microfluidic devices. According to the technical scheme provided by the invention, the microfluidic device comprises a microfluidic channel substrate and a glass sheet positioned right above the microfluidic channel substrate, wherein a metal electrode layer is arranged on the surface of one side, close to the microfluidic channel substrate, of the glass sheet, and an SU8 supporting body and a microfluidic channel matched with the SU8 supporting body are arranged on the surface, close to the glass sheet, of the microfluidic channel substrate; the metal electrode layer can be bonded and fixed with the SU8 supporting body, the glass sheet is supported on the micro-channel substrate through the bonded metal electrode layer and the SU8 supporting body, a sheet hole in the glass sheet corresponds to a micro-channel on the micro-channel substrate, the sheet hole penetrates through the glass sheet, and the sheet hole is communicated with the corresponding micro-channel. The invention has compact structure, is compatible with the prior art, reduces the production and use cost, and is safe and reliable.
Description
Technical Field
The invention relates to a device and a preparation method thereof, in particular to a microfluidic device and a preparation method thereof, belonging to the technical field of microfluidic devices.
Background
The microfluidic device can integrate a plurality of basic functions of sample preparation, reaction, separation, detection and analysis and the like in the fields of biology, chemistry and the like; specifically, the microfluidic device is a network formed by microchannels, so that the controllable fluid can penetrate through the whole device, and the whole analysis process can be automatically completed. Because the analysis system of the microfluidic device has the advantages of high integration level, high sensitivity, low cost, micro-size, portability and the like, the analysis system has huge application prospects in the fields of material synthesis, biomedicine, food safety, environmental protection, biochemical detection and the like.
The existing microfluidic device has complex structure and process and high cost, and is difficult to adapt to the needs of industrial development.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a microfluidic device and a preparation method thereof, which have compact structure, are compatible with the prior art, reduce the production and use cost, and are safe and reliable.
According to the technical scheme provided by the invention, the microfluidic device comprises a microfluidic channel substrate and a glass sheet positioned right above the microfluidic channel substrate, wherein a metal electrode layer is arranged on the surface of one side, close to the microfluidic channel substrate, of the glass sheet, and an SU8 supporting body and a microfluidic channel matched with the SU8 supporting body are arranged on the surface, close to the glass sheet, of the microfluidic channel substrate;
the metal electrode layer can be bonded and fixed with the SU8 supporting body, the glass sheet is supported on the micro-channel substrate through the bonded metal electrode layer and the SU8 supporting body, a sheet hole in the glass sheet corresponds to a micro-channel on the micro-channel substrate, the sheet hole penetrates through the glass sheet, and the sheet hole is communicated with the corresponding micro-channel.
The micro flow channel substrate comprises silicon, and the SU8 support is made of SU8 photoresist.
A method of making a microfluidic device, the method comprising the steps of:
the metal electrode layer is bonded with the SU8 support body in vacuum, the bonding temperature is 145-150 ℃, the contact air pressure between the metal electrode layer and the SU8 support body is 0.05-0.1 MPa, and the vacuum bonding time is 20-30 min; after bonding, the glass slide was supported on the micro flow channel substrate via the bonded metal electrode layer and SU8 support by maintaining the contact air pressure between the metal electrode layer and SU8 support and naturally cooling to 50 ℃.
In the step 1, the method specifically comprises the following steps:
step 1.1, heating the provided glass sheet at the temperature of 110-120 ℃ for 10-20 min;
step 1.2, after the glass sheet is cooled to normal temperature, spin-coating the glass sheet to obtain a glass sheet photoresist layer;
step 1.3, photoetching the glass sheet photoresist layer to perform required patterning on the glass sheet photoresist layer, and baking the glass sheet and the glass sheet photoresist layer after photoetching, wherein the baking temperature is 100-110 ℃, and the baking time is 100-120 s;
step 1.4, developing the patterned glass sheet photoresist layer to obtain a glass sheet photoresist layer window penetrating through the glass sheet photoresist layer;
step 1.5, sputtering a metal material on the glass sheet to obtain a sputtering metal layer filled in a window of a photoresist layer of the glass sheet and the photoresist layer of the glass sheet;
step 1.6, removing the glass sheet photoresist layer and the sputtering metal layer on the glass sheet photoresist layer to obtain a metal electrode layer positioned on the glass sheet;
and step 1.7, carrying out laser drilling on the glass sheet to obtain a plurality of sheet body holes penetrating through the glass sheet.
The sputtering metal layer is a gold layer, and the thickness of the sputtering metal layer is 150 nm-200 nm.
The step 2 specifically comprises the following steps:
step 2.1, heating the micro-channel substrate at the temperature of 110-120 ℃ for 10-20 min;
and 2.2, after the temperature of the micro-channel substrate is reduced to normal temperature, placing the micro-channel substrate on a tray of a spin coater, dripping needed SU8 photoresist solution on the micro-channel substrate, rotating the micro-channel substrate for 10-20 s at 600-700 r/min through the spin coater, then rotating for 100-150 s at 4500-5000 r/min, and finally rotating for 10-20 s at 600-1000 r/min to obtain the SU8 photoresist film with the thickness of 25-30 μm.
3.1, placing the micro-channel substrate and the SU8 photoresist film on a hot plate for baking, wherein the baking is carried out for 5-15 min at 55-65 ℃ and 10-20 min at 95-105 ℃;
step 3.2, after the temperature of the micro-channel substrate is reduced to the normal temperature, exposing the SU8 photoresist film with the exposure intensity of 18.5mW/cm2The exposure time is 6 s-8 s;
3.3, placing the micro-channel substrate and the exposed SU8 photoresist film on a hot plate for baking, wherein during baking, the micro-channel substrate and the exposed SU8 photoresist film are baked for 2-3 min at 65-75 ℃, and then baked for 3-5 min at 90-100 ℃; after baking, taking the micro-channel substrate off the hot plate and placing the substrate in a nitrogen cabinet to cool to room temperature;
3.4, placing the micro-channel substrate and the exposed SU8 photoresist film in a PGMEA developing solution, soaking for 1-2 min, shaking the PGMEA developing solution for 20-30 s, and continuing developing in the PGMEA developing solution for 10-15 min after shaking;
and 3.5, replacing the developing solution, continuously developing for 3-6 min, and then placing the substrate in isopropanol to rinse for 2-5 min so as to obtain an SU8 support body and a micro channel matched with the SU8 support body on the micro channel substrate.
The invention has the advantages that: the preparation method comprises the steps of preparing an SU8 supporting body and a micro channel on a micro channel substrate, preparing a metal electrode layer and a chip hole penetrating through the glass chip on the glass chip, and utilizing the hot-pressing bonding of the SU8 supporting body and the metal electrode layer to enable the glass chip to be effectively bonded and connected with the micro channel substrate, wherein the chip hole corresponds to the micro channel.
Drawings
FIGS. 1-12 are cross-sectional views of microfluidic devices prepared according to embodiments of the present invention, wherein
FIG. 1 is a cross-sectional view of a glass sheet of the present invention.
FIG. 2 is a cross-sectional view of the present invention after a photoresist layer of a glass sheet has been formed on the glass sheet.
FIG. 3 is a cross-sectional view of a first reticle used in the present invention to lithographically form a photoresist layer on a glass sheet.
FIG. 4 is a cross-sectional view of a glass slide having a photoresist layer window according to the present invention.
FIG. 5 is a cross-sectional view of the sputtered metal layer of the present invention.
Fig. 6 is a cross-sectional view of the metal electrode layer obtained by the present invention.
FIG. 7 is a cross-sectional view of the present invention after a wafer hole has been created.
FIG. 8 is a cross-sectional view of a micro flow channel substrate of the invention.
FIG. 9 is a cross-sectional view of a SU8 photoresist film obtained in accordance with the present invention.
FIG. 10 is a cross-sectional view of a second reticle used in the present invention to photolithographically etch a SU8 photoresist film.
FIG. 11 is a sectional view of the micro flow channel of the present invention.
Fig. 12 is a cross-sectional view of the metal electrode layer of the present invention after thermocompression bonding with SU8 support.
Description of reference numerals: 1-glass sheet, 2-glass sheet photoresist layer, 3-first mask, 4-glass sheet photoresist layer window, 5-sputtering metal layer, 6-sheet hole, 7-micro channel substrate, 8-SU8 photoresist film, 9-second mask, 10-SU8 support, 11-micro channel and 12-metal electrode layer.
Detailed Description
The invention is further illustrated by the following specific figures and examples.
As shown in fig. 12: under the condition of meeting the characteristics of a microfluidic device, in order to reduce the complexity of the structure, the micro-fluidic device comprises a micro-channel substrate 7 and a glass sheet 1 positioned right above the micro-channel substrate 7, wherein a metal electrode layer 12 is arranged on the surface of one side, adjacent to the micro-channel substrate 1, of the glass sheet 1, and an SU8 support body 10 and a micro-channel 11 matched with the SU8 support body 10 are arranged on the surface, adjacent to the glass sheet 1, of the micro-channel substrate 7;
the metal electrode layer 12 can be bonded and fixed with the SU8 support 10, the glass sheet 1 is supported on the micro flow channel substrate 7 through the bonded metal electrode layer 12 and the SU8 support 10, the sheet hole 6 on the glass sheet 1 corresponds to the micro flow channel 11 on the micro flow channel substrate 7, the sheet hole 6 penetrates through the glass sheet 1, and the sheet hole 6 is communicated with the corresponding micro flow channel 11.
Specifically, the micro flow channel substrate 7 comprises silicon, and the SU8 support 10 is made of SU8 photoresist. The glass plate 1 is located directly above the micro flow channel substrate 7. When the micro flow channel 11 is prepared on the micro flow channel substrate 7, the SU8 support 10 can be obtained simultaneously. The SU8 support 10 and the metal electrode layer 12 can be bonded and fixed by a thermal compression bonding method, the glass sheet 1 is supported on the micro channel substrate 7 by the bonded metal electrode layer 12 and the SU8 support 10, the sheet holes 6 on the glass sheet 1 correspond to the micro channels 11 on the micro channel substrate 7, the sheet holes 6 penetrate through the glass sheet 1, and the sheet holes 6 are communicated with the corresponding micro channels 11.
In the embodiment of the present invention, during detection, a liquid to be detected is injected into the micro flow channel 11 corresponding to the chip hole 6 through the chip hole 6, when the liquid to be detected flows in the micro flow channel 11, a corresponding detection result can be output through the metal electrode layer 12, and a specific detection process using the micro flow channel 11 is the same as that in the prior art, which is known to those skilled in the art. The metal electrode layer 12 and the SU8 support 10 are thermally pressed to realize effective connection between the glass sheet 1 and the micro-channel substrate 7, thereby reducing the complexity of the micro-fluidic device and reducing the processing cost. The glass sheet 1 above the microchannel 11 allows light to pass therethrough, thereby enabling detection of light or the like.
As shown in fig. 1 to 12, the microfluidic device with the above structure can be prepared by the following process steps, specifically, the preparation method comprises the following steps:
specifically, the method comprises the following steps:
step 1.1, heating the provided glass sheet 1 at the temperature of 110-120 ℃ for 10-20 min;
in the embodiment of the present invention, the glass sheet 1 may be a conventional glass sheet, as shown in fig. 1. After the glass sheet 1 is heated, the moisture of the glass sheet 1 can be removed.
Step 1.2, after the glass sheet 1 is cooled to normal temperature, spin-coating the glass sheet 1 to obtain a glass sheet photoresist layer 2;
specifically, the photoresist 7133 may be used as the glass wafer photoresist layer 2, and of course, other types of photoresists may be used as well, which may be specifically selected according to the needs. Spin-coating a glass wafer photoresist layer 2, placing the glass wafer 1 on a spin coater, and then dropping a selected photoresist solution, which may be 10ml, on the glass wafer 1. When spin coating is carried out, the glass sheet 1 is firstly rotated for 5-8 s at 600-800 r/min, then rotated for 30-40 s at 2000-3000 r/min, and after rotation, the spin coater is stopped to drive the glass sheet 1, so that the glass sheet 1 is finally stopped to rotate, and the glass sheet photoresist layer 2 with the thickness of 3-4 mu m is obtained on the glass sheet 1, as shown in figure 2. After the glass sheet photoresist layer 2 is obtained, the glass sheet 1 and the glass sheet photoresist layer 2 are heated by a hot plate, the heating temperature is 100-110 ℃, and the heating time is 80-100 s.
Step 1.3, photoetching the glass sheet photoresist layer 2 to perform required patterning on the glass sheet photoresist layer 2, and baking the glass sheet 1 and the glass sheet photoresist layer 2 after photoetching, wherein the baking temperature is 100-110 ℃, and the baking time is 100-120 s;
specifically, after the glass sheet 1 is cooled to room temperature, the glass sheet photoresist layer 2 is subjected to photolithography by using the first mask 3, as shown in fig. 3. During photoetching, the exposure time is 4 s-6 s, and the exposure intensity is 8.9mW/cm2. The process of using the first mask 3 to perform the photolithography on the glass sheet photoresist layer 2 is the same as the prior art, and is well known to those skilled in the art, and is not described herein again.
Step 1.4, developing the patterned glass photoresist layer 2 to obtain a glass photoresist layer window 4 penetrating through the glass photoresist layer 2;
specifically, the development is carried out by using TMAH for 60-90 s, and the specific development process is consistent with the prior art, so that the window 4 of the glass photoresist layer 2 is penetrated, as shown in FIG. 4.
Step 1.5, sputtering a metal material on the glass sheet 1 to obtain a sputtering metal layer 5 filled in the glass sheet photoresist layer window 4 and the glass sheet photoresist layer 2;
specifically, a metal layer is sputtered by adopting a technical means commonly used in the technical field, and the sputtering power is 300W. The sputtered metal material is gold, the sputtering time is 8-10 min, the thickness of the sputtered metal layer 5 is 150-200 nm, and the sputtered metal layer 5 can cover the glass wafer photoresist layer 2 and can be filled in the glass wafer photoresist layer window 4 at the same time, as shown in fig. 5.
Step 1.6, removing the glass sheet photoresist layer 2 and the sputtered metal layer 5 on the glass sheet photoresist layer 2 to obtain a metal electrode layer 12 on the glass sheet 1;
specifically, the glass wafer photoresist layer 2 and the sputtered metal layer 5 on the glass wafer photoresist layer 2 are removed by adopting a commonly used technical means in the technical field, and the glass wafer photoresist layer is soaked in acetone for 10-15 min in specific implementation, wherein the concentration of the acetone is 99.5%; ultrasonic vibration is needed in acetone, so that the metal electrode layer 12 can be obtained, that is, the metal electrode layer 12 is formed by filling the window 4 of the photoresist layer on the glass sheet, as shown in fig. 6. The power of the ultrasound may be 100W-1000W, and the frequency of the ultrasound vibration is 50 KHz-150 KHz, and certainly, the working parameters of the ultrasound vibration may be selected according to actual needs, which are known to those skilled in the art, and will not be described herein again.
And step 1.7, carrying out laser drilling on the glass sheet 1 to obtain a plurality of sheet body holes 6 penetrating through the glass sheet 1.
Specifically, the drilling operation is performed by a laser drilling method commonly used in the art, and the specific laser drilling process is well known to those skilled in the art and is not described herein again. After punching, a number of sheet holes 6 are obtained, the sheet holes 6 penetrating the glass sheet 1, as shown in fig. 7. The position of the sheet body hole 6 on the glass sheet 1 is selected according to the requirement, and the sheet body hole 6 is not contacted with the metal electrode layer 2.
specifically, the step 2 includes the following steps:
step 2.1, heating the micro-channel substrate 7 at 110-120 ℃ for 10-20 min;
specifically, the micro flow channel substrate 7 may be a silicon wafer, as shown in FIG. 8. After the micro flow channel substrate 7 is heated, water vapor on the micro flow channel substrate 7 can be removed.
2.2, after the temperature of the micro-channel substrate 7 is reduced to normal temperature, placing the micro-channel substrate 7 on a tray of a spin coater, dripping needed SU8 photoresist solution on the micro-channel substrate 7, enabling the micro-channel substrate 7 to rotate for 10 s-20 s at 600 r/min-700 r/min, then rotate for 100 s-150 s at 4500 r/min-5000 r/min, and finally rotate for 10 s-20 s at 600 r/min-1000 r/min by the spin coater, so as to enable the SU8 photoresist film 8 of 25 μm-30 μm;
specifically, the SU8 photoresist can be SU 83050 photoresist, and the SU8 photoresist dropped on the micro flow channel substrate 7 can be 10ml, and the process of performing photoresist uniformization on the SU8 photoresist on the micro flow channel substrate 7 by using a photoresist uniformizing machine is consistent with the prior art. The substrate is decelerated to 600 r/min-1000 r/min and rotated for 10 s-20 s, the spin coater stops the rotation drive of the micro-channel substrate 7, so that the micro-channel substrate 7 rotates freely until the rotation stops, and the thickness of the SU8 photoresist film 8 is 25 μm-30 μm, as shown in FIG. 9.
specifically, the step 3 includes the following steps:
3.1, placing the micro-channel substrate 7 and the SU8 photoresist film 8 on a hot plate for baking, wherein the baking is carried out for 5-15 min at 55-65 ℃ and 10-20 min at 95-105 ℃;
step 3.2, after the temperature of the micro-channel substrate 7 is reduced to the normal temperature, exposing the SU8 photoresist film 8 with the exposure intensity of 18.5mW/cm2Exposure timeIs 6s to 8 s;
as shown in fig. 10, the SU8 photoresist film 8 is subjected to photolithography by using the second reticle 9, and the specific photolithography process is well known to those skilled in the art and will not be described herein again.
3.3, placing the micro-channel substrate 7 and the exposed SU8 photoresist film 8 on a hot plate for baking, wherein during baking, the micro-channel substrate is baked at 65-75 ℃ for 2-3 min, and then baked at 90-100 ℃ for 3-5 min; after baking, the micro flow channel substrate 7 is taken off from the hot plate and placed in a nitrogen cabinet to be cooled to room temperature;
3.4, placing the micro-channel substrate 7 and the exposed SU8 photoresist film 8 in a PGMEA developing solution, soaking for 1-2 min, shaking the PGMEA developing solution for 20-30 s, and continuing developing in the PGMEA developing solution for 10-15 min after shaking;
and 3.5, replacing the developing solution, continuously developing for 3-6 min, and then placing the substrate in isopropanol to rinse for 2-5 min so as to obtain the SU8 support body 10 and the micro channel 11 matched with the SU8 support body 10 on the micro channel substrate 7.
Specifically, after the above-described steps 3.1 to 3.5, the corresponding SU8 photoresist film 8 on the micro flow channel substrate 7 can be removed, the remaining SU8 photoresist film 8 can form the SU8 support 10, and the micro flow channel 11 can be formed on the micro flow channel substrate 7 by the SU8 support 10, as shown in fig. 11. The specific shape of the micro flow channel 11 can be selected and controlled according to the above-mentioned photolithography and developing processes, which are well known to those skilled in the art and will not be described herein. Generally, the micro flow channel substrate 7 needs to be blown dry after rinsing in isopropyl alcohol. The concentration of the PGMEA developing solution is 99.5%, the concentration of the isopropanol is 99.5%, and of course, other concentrations can be adopted, and specifically, the concentration can be selected according to actual needs, and the developing process of the SU8 photoresist is realized by using the PGMEA developing solution and the isopropanol, which is consistent with the existing developing process of the SU8 photoresist, and is specifically known by those skilled in the art, and is not described herein again.
the metal electrode layer 12 and the SU8 support 10 are bonded in vacuum, the bonding temperature is 145-150 ℃, the contact air pressure between the metal electrode layer 12 and the SU8 support 10 is 0.05-0.1 MPa, and the vacuum bonding time is 20-30 min; after bonding, the glass plate 1 was supported on the micro flow channel substrate 7 by the bonded metal electrode layer 12 and SU8 support 10 while maintaining the contact air pressure between the metal electrode layer 12 and the SU8 support 10 and naturally cooling to 50 ℃.
Specifically, the step 4 is performed using a bonding machine. When bonding, opening a vacuum pump of the bonding machine, vacuumizing, and waiting for the vacuum degree of the bonding machine to reach 10-3And when the temperature is less than Pa, heating the glass sheet 1 and the micro flow channel substrate 7 in the bonder to an ambient temperature of 145-150 ℃. The metal electrode layer 12 can be brought into contact with the SU8 support 10 by a bonding machine, and after the contact, the contact air pressure between the metal electrode layer 12 and the SU8 support 10 is set to 0.05MPa to 0.1 MPa. And (3) keeping the temperature and the contact pressure state of the metal electrode layer 12 and the SU8 support body 10, after 20-30 min, closing the temperature of the bonding machine after bonding, keeping the contact pressure between the metal electrode layer 12 and the SU8 support body 10, naturally cooling the whole environment to below 50 ℃, removing the contact pressure loaded between the metal electrode layer 12 and the SU8 support body 10, breaking vacuum, and completing the preparation of the whole microfluidic device.
According to the invention, the SU8 support body 10 and the micro channel 11 are prepared on the micro channel substrate 7, the metal electrode layer 12 and the sheet body hole 6 penetrating through the glass sheet 1 are prepared on the glass sheet 1, the glass sheet 1 and the micro channel substrate 7 can be effectively bonded and connected by utilizing the hot-pressing bonding of the SU8 support body 10 and the metal electrode layer 12, the sheet body hole 6 corresponds to the micro channel 11, the whole process is compatible with the existing process, the structure and the process complexity of a micro-fluidic device can be reduced, the processing efficiency of the micro-fluidic device is improved, and the micro-fluidic device is safe and reliable.
Claims (3)
1. A preparation method of a microfluidic device is characterized by comprising the following steps:
step 1, providing a glass sheet (1), and preparing a metal electrode layer (12) and a plurality of sheet body holes (6) penetrating through the glass sheet (1) on the glass sheet (1);
step 2, providing a micro-channel substrate (7), and spin-coating the micro-channel substrate (7) to obtain an SU8 photoresist film (8);
step 3, preparing a needed SU8 support (10) and a micro-channel (11) matched with the SU8 support (10) on a micro-channel substrate (7) by using the SU8 photoresist film (8);
step 4, placing the glass sheet (1) above the micro-channel substrate (7) in the step 3, aligning the sheet hole (6) on the glass sheet (1) with the micro-channel (11) on the micro-channel substrate (7), and carrying out a vacuum bonding process on the metal electrode layer (12) on the glass sheet (1) and the SU8 support body (10) on the micro-channel substrate (7);
the metal electrode layer (12) and the SU8 support body (10) are in vacuum bonding, the bonding temperature is 145-150 ℃, the contact air pressure between the metal electrode layer (12) and the SU8 support body (10) is 0.05-0.1 MPa, and the vacuum bonding time is 20-30 min; after bonding, the glass plate (1) is supported on the micro flow channel substrate (7) through the bonded metal electrode layer (12) and the SU8 support body (10) while maintaining the contact air pressure between the metal electrode layer (12) and the SU8 support body (10) and naturally cooling to below 50 ℃;
in the step 1, the method specifically comprises the following steps:
step 1.1, heating the provided glass sheet (1), wherein the heating temperature is 110-120 ℃, and the heating time is 10-20 min;
step 1.2, after the glass sheet (1) is cooled to normal temperature, spin-coating the glass sheet (1) to obtain a glass sheet photoresist layer (2);
step 1.3, photoetching the glass sheet photoresist layer (2) to perform required patterning on the glass sheet photoresist layer (2), and baking the glass sheet (1) and the glass sheet photoresist layer (2) after photoetching, wherein the baking temperature is 100-110 ℃, and the baking time is 100-120 s;
step 1.4, developing the patterned glass sheet photoresist layer (2) to obtain a glass sheet photoresist layer window (4) penetrating through the glass sheet photoresist layer (2);
step 1.5, sputtering a metal material on the glass sheet (1) to obtain a sputtering metal layer (5) filled in the glass sheet photoresist layer window (4) and the glass sheet photoresist layer (2);
step 1.6, removing the glass sheet photoresist layer (2) and the sputtering metal layer (5) on the glass sheet photoresist layer (2) to obtain a metal electrode layer (12) on the glass sheet (1);
step 1.7, carrying out laser drilling on the glass sheet (1) to obtain a plurality of sheet body holes (6) penetrating through the glass sheet (1);
the step 3 specifically comprises the following steps:
3.1, placing the micro-channel substrate (7) and the SU8 photoresist film (8) on a hot plate for baking, wherein the baking is carried out at 55-65 ℃ for 5-15 min and at 95-105 ℃ for 10-20 min;
step 3.2, after the temperature of the micro-channel substrate (7) is reduced to the normal temperature, exposing the SU8 photoresist film (8) with the exposure intensity of 18.5mW/cm2The exposure time is 6 s-8 s;
3.3, placing the micro-channel substrate (7) and the exposed SU8 photoresist film (8) on a hot plate for baking, wherein during baking, the substrate is baked at 65-75 ℃ for 2-3 min, and then baked at 90-100 ℃ for 3-5 min; after baking, taking the micro-channel substrate (7) off the hot plate and placing the substrate in a nitrogen cabinet to cool to room temperature;
3.4, placing the micro-channel substrate (7) and the exposed SU8 photoresist film (8) in a PGMEA developing solution, soaking for 1-2 min, shaking the PGMEA developing solution for 20-30 s, and continuing developing in the PGMEA developing solution for 10-15 min after shaking;
and 3.5, replacing the developing solution, continuing developing for 3-6 min, and then rinsing in isopropanol for 2-5 min to obtain an SU8 support body (10) and a micro channel (11) matched with the SU8 support body (10) on the micro channel substrate (7).
2. The method for preparing a microfluidic device according to claim 1, wherein the sputtered metal layer (5) is a gold layer, and the thickness of the sputtered metal layer (5) is 150nm to 200 nm.
3. The method for preparing a microfluidic device according to claim 1, wherein the step 2 specifically comprises the following steps:
step 2.1, heating the micro-channel substrate (7), wherein the heating temperature is 110-120 ℃, and the heating time is 10-20 min;
and 2.2, after the temperature of the micro-channel substrate (7) is reduced to normal temperature, placing the micro-channel substrate (7) on a tray of a spin coater, dripping needed SU8 photoresist on the micro-channel substrate (7), enabling the micro-channel substrate (7) to rotate for 10 s-20 s at 600 r/min-700 r/min through the spin coater, then rotating for 100 s-150 s at 4500 r/min-5000 r/min, and finally rotating for 10 s-20 s at 600 r/min-1000 r/min to obtain the SU8 photoresist film (8) with the thickness of 25 mu m-30 mu m.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7375404B2 (en) * | 2003-12-05 | 2008-05-20 | University Of Maryland Biotechnology Institute | Fabrication and integration of polymeric bioMEMS |
| CN102513169A (en) * | 2011-12-09 | 2012-06-27 | 东南大学 | Microfluidic device used in micron-grade particle high-flux separation, and manufacturing method thereof |
| CN109590038A (en) * | 2018-12-29 | 2019-04-09 | 天津大学 | A kind of sub-micron runner micro-fluidic chip and preparation method thereof |
| CN109928359A (en) * | 2019-03-25 | 2019-06-25 | 机械工业仪器仪表综合技术经济研究所 | Micro-structure packaging method and packaging |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7375404B2 (en) * | 2003-12-05 | 2008-05-20 | University Of Maryland Biotechnology Institute | Fabrication and integration of polymeric bioMEMS |
| CN102513169A (en) * | 2011-12-09 | 2012-06-27 | 东南大学 | Microfluidic device used in micron-grade particle high-flux separation, and manufacturing method thereof |
| CN109590038A (en) * | 2018-12-29 | 2019-04-09 | 天津大学 | A kind of sub-micron runner micro-fluidic chip and preparation method thereof |
| CN109928359A (en) * | 2019-03-25 | 2019-06-25 | 机械工业仪器仪表综合技术经济研究所 | Micro-structure packaging method and packaging |
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