CN111564686A - Spin transfer torque nano-column microwave oscillator and regulation and control method thereof - Google Patents
Spin transfer torque nano-column microwave oscillator and regulation and control method thereof Download PDFInfo
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Abstract
The invention provides a spin transfer torque nanometer column microwave oscillator and a regulation and control method thereof, comprising adopting a permalloy film made of a single material; etching the lower layer of the permalloy film into a flaky cuboid with the longest length, marking as a base and using the base as a fixed layer; the upper layer is etched into a nano-pillar with the longest height as a free layer. The amplitude of the magnetic moment oscillation of the nano-column is improved by regulating and controlling the width and the thickness of the base; changing the size of the nano-pillar and regulating and controlling the motion state of the magnetic moment in the nano-pillar; on the nano-pillar array microwave oscillator with the base structure, the mutual phase locking (namely synchronization) of a plurality of nano-pillar magnetic moment oscillation signals is achieved by regulating and controlling the distance between the nano-pillars, so that the amplitude and the power output of the oscillation signals of the nano-pillar array oscillator are greatly improved; and applying a variable external magnetic field along the longest edge of the base to regulate and control the amplitude of the nano-pillar array oscillator and regulating and controlling the frequency of the nano-pillar array oscillator by loading variable direct current density.
Description
Technical Field
The invention belongs to the technical field of microwave oscillators, and particularly relates to a spin transfer torque nanorod microwave oscillator and a regulating and controlling method thereof.
Background
The existing STNO is generally composed of a three-layer structure of F1/NM/F2, F1 being a thicker magnetic pinned layer, F2 being a thinner magnetic free layer, and the middle NM being a nonmagnetic metal layer. When a direct current is passed through F1, the spin direction of the electrons is polarized to be the same as the direction of the F1 magnetic moment, resulting in a spin-polarized current. When a spin-polarized current is passed through F2, the magnetic moment of F2 will tend to be in the same direction as the polarization of the spintronic, which corresponds to the transfer of the angular momentum of the spintronic to the magnetic moment of F2. The sandwich-structured STNO is difficult to manufacture in industrial production due to the relatively complex structure.
The inventors have previously invented a two-layer STNO, spin transfer torque nanopillar microwave oscillator with a vortex domain wall. Consists of a fixed layer and a free layer which are superposed; the magnetic moment direction of the fixed layer is perpendicular to the plane of the nano column, namely perpendicular magnetization, the magnetic moment direction of the free layer is parallel to the plane of the nano column, namely in-plane magnetization, and direct current is perpendicular to the plane of the nano column and flows through the fixed layer through the free layer. The fixed layer is made of a perpendicular anisotropic hard magnetic material, and the free layer is made of a soft magnetic material. Compared with the traditional nano-column oscillator with a sandwich structure, the double-layer structure STNO without the middle layer is simpler, and the process flow is simplified. However, the fixed layer and the free layer of the double-layer STNO need to be separately prepared by using two different materials, and the nanopillar array prepared on the basis of the two different materials needs an additional base as a support, so that the disadvantages and the needs for improvement in industrial production exist.
Disclosure of Invention
Compared with a sandwich structure STNO and a double-layer STNO with a vortex domain wall, the spin transfer torque nanorod microwave oscillator is simplest in structure, is completely formed by etching single uniform material permalloy without other special treatment, is simpler and more efficient in nano processing and manufacturing process, and provides more convenience and higher efficiency for industrial production.
The specific technical scheme is as follows:
the spin transfer torque nanometer column microwave oscillator comprises a permalloy film made of a single material; etching the lower layer of the permalloy film into a flaky cuboid with the longest length, marking as a base and using the base as a fixed layer; the upper layer is etched into a nano-pillar with the longest height as a free layer.
The fixed layer has an in-plane magnetization direction; the free layer has a perpendicular magnetization direction.
The size of the nano column is adjustable, and the nano column is used for regulating and controlling the motion state of magnetic moment inside the nano column; the base is adjustable in width and thickness and used for regulating and controlling the amplitude and frequency of magnetic moment oscillation of the nano-column.
Etching a plurality of nano columns on the base to form an array, and regulating and controlling the spacing of the nano columns to enable magnetic moment oscillation signals of the nano columns to be mutually phase-locked; thereby greatly improving the amplitude and power output of the microwave nano-pillar array oscillation device.
The device also comprises an external magnetic field for regulating and controlling the oscillation amplitude of the single nano-column oscillator; thereby realizing the purpose of greatly improving the integral amplitude of the nano-pillar array.
The oscillation frequency of a single nano-pillar can be regulated and controlled in a large range by changing the current density, so that the integral frequency of the nano-pillar array oscillator device can be effectively regulated and controlled.
The magnetic moment direction of the nano column is perpendicular to the plane of the base, and the magnetic moment direction of the base is along the plane of the base. Direct current flows from the base to the nano-pillars along the plane of the base, and the magnetic moment of the nano-pillars is periodically oscillated by the spin transfer torque.
The invention also provides a regulation and control method of the spin transfer torque nanometer column microwave oscillator, which regulates and controls the motion state of the magnetic moment in the nanometer column by changing the size of the nanometer column.
Or the amplitude and the frequency of the spin-transfer torque nanometer column microwave oscillator are regulated and controlled by changing the width and the thickness of the base.
Or, the base is etched with a plurality of nano-columns to form an array, the magnetic moment oscillation signals of the nano-columns are mutually phase-locked by regulating the distance between the nano-columns, and the amplitude and the power output of the spin transfer torque nano-column microwave oscillator are regulated.
Or, the amplitude of the spin transfer torque nanometer column microwave oscillator is regulated and controlled by applying an external magnetic field along the length direction of the base fixing layer.
Or the oscillation frequency of the spin-transfer torque nanometer column microwave oscillator is regulated and controlled by changing the current density.
The invention provides a spin transfer torque nano-column microwave oscillator and a regulation and control method thereof. The production process flow is simplified, and the coupling among a plurality of nano-columns can be easily realized on the base. The amplitude of the magnetic moment oscillation of the nano-column can be improved by regulating and controlling the width and the thickness of the base.
Drawings
FIG. 1(a) is a schematic diagram of a spin transfer torque nanopillar microwave oscillator structure for a single nanopillar;
FIG. 1(b) is a schematic diagram of a structure of an oscillator forming an 8 × 4 nanopillar array;
FIG. 2(a) is a graph showing the variation of the component Mz of the magnetic moment in the Z-axis direction with the simulation time, when the size of the nano-pillar is 20nm × 30nm × 30 nm;
FIG. 2(b) is a graph showing the distribution of magnetization at each of a, b, c, and d in FIG. 2 (a);
FIG. 2(c) is a graph showing the variation of the component MX of the magnetic moment in the X-axis direction with the simulation time when the size of the nano-pillar is 30nm × 30nm × 40nm, i.e., the cross section of the top of the nano-pillar is square;
FIG. 2(d) is a graph showing the magnetization distribution at each of a, b, c, and d in FIG. 2 (c);
FIG. 3(a) is the adjustment and control situation of the base width to the oscillation characteristic of the magnetic moment Mz of the nanorod;
FIG. 3(b) is the adjustment and control situation of the base thickness to the oscillation characteristic of the magnetic moment Mz of the nano-pillar;
FIG. 4(a) is a schematic diagram of a 2X 2 nanopillar array structure,
FIG. 4(b) is an Mz oscillation image of the whole array and each nanopillar;
FIG. 5 is the oscillating behavior of the magnetic moment obtained when a varying external magnetic field is applied in FIG. 4 (a);
FIG. 6 is the control of the oscillation frequency of the nanopillar magnetic moment Mz by the current density varied in FIG. 4 (a).
Detailed Description
The invention is further illustrated by the following specific examples. The use and purpose of these exemplary embodiments are to illustrate the present invention, not to limit the actual scope of the present invention in any way, and not to limit the scope of the present invention in any way.
Example 1
As shown in FIG. 1(a) and FIG. 1(b), the schematic structural diagram of the spin transfer torque nanorod microwave oscillator provided in this embodiment includes a basic unit composed of an in-plane magnetized free layer base and a perpendicularly magnetized nanorod fixing layer, a permalloy film is grown first and then etched into a desired shape, that is, a lower layer is etched into a sheet-like rectangular parallelepiped as a base, the longest side of which is the length of a rectangular cross section, so that the lower layer base has an in-plane magnetization direction as a fixing layer, and an upper layer is etched into a nanobudle having the longest height, so that the upper layer of the nanorod has a perpendicular magnetization direction as a free layer, and the dimensions of the base and the nanorod can be used as variables to regulate and control the oscillation behavior of the nanorod magnetic moment, and in a micromagnetic simulation, the permalloy material parameter is set to have an exchange coefficient of 1.3 × 10-11J/m, magnetocrystalline anisotropy constant of 0, saturation magnetization of 8.6 × 105A/m, a default value of a spin polarizability selection program is 0.4, a damping coefficient α is 0.05, a non-adiabatic coefficient β is 0.04, and a grid size is 5nm × 5nm × 5 nm.
The obtained spin transfer torque nano-pillar microwave oscillator is polarized to generate spin current when loading direct current flows through the fixed layer, the generated spin current can exert a spin transfer torque effect on the magnetic moment of the free layer, and when the spin transfer torque exceeds a certain critical current, the spin transfer torque can completely compensate local magnetic moment precession damping so as to output a microwave oscillation signal. Due to the giant magnetoresistance effect, the magnetic moment oscillation is converted into a microwave oscillation current signal.
As shown in FIG. 2(a), FIG. 2(b), FIG. 2(c) and FIG. 2(d), the size of the nano-pillars is changed and fixed for this embodimentThe size of the base is 1000nm × 300nm × 30nm, the loading is along the positive direction of the Z axis, and the direct current density is 1.86 × 1012A/m2The magnetic moment oscillation behavior of the single nanorod microwave oscillator with the base structure is obtained, fig. 2(a) shows the change of the component Mz of the magnetic moment in the Z-axis direction along with the simulation time when the size of the nanorod is 20nm × 30nm × 30nm, and it can be seen that the magnetic moment of the nanorod with the size rotates anticlockwise around the X-axis and the Mz shows the oscillation behavior along with the time period, fig. 2(b) shows the magnetization intensity distribution corresponding to the moments a, b, c and d in fig. 2(a), and it can be seen that the main source of the oscillation generated by the overall Mz is the counterclockwise rotation of the magnetic moment around the X-axis in the nanorod area above the base, fig. 2(c) shows the component M of the magnetic moment in the X-axis direction when the size of the nanorod is 30nm × 30nm × 40nm, that is the bottom surface of the nanorod is squareXAs the time variation of the simulation shows, the magnetic moment of the nano-pillar with the size rotates clockwise around the Z axis, and M isXExhibiting oscillating behavior over a period of time. FIG. 2(d) shows the magnetization distributions at the respective times a, b, c, d in FIG. 2(c), and similarly, M is the wholeXThe main source of the oscillation is the clockwise rotation of the magnetic moment of the nanopillar region above the base about the Z-axis.
Therefore, on the premise that other parameters are not changed, the magnetic moment motion state in the nano-pillar free layer can be effectively regulated and controlled only by changing the size of the nano-pillar.
FIG. 3(a) and FIG. 3(b) show that the size of the fixed nano-column is 20nm × 30nm × 30nm, the loading is along the positive direction of the Z axis, and the direct current density is 1.86 × 1012A/m2In the meantime, the size of the base is changed to regulate the oscillation characteristic of the magnetic moment of the oscillator obtained in this embodiment, and fig. 3(a) shows the regulation and control condition of the width of the base on the oscillation characteristic of the magnetic moment Mz of the nano-pillar, which shows that the width of the base has a large influence on the oscillation characteristic of the magnetic moment Mz of the nano-pillar. As the pedestal width increases, the frequency drops by approximately 0.6GHz, but the amplitude of the oscillation increases significantly. Fig. 3(b) shows the adjustment and control of the oscillation characteristic of the nano-pillar magnetic moment Mz by the thickness of the base, and it can be seen that the frequency of the periodic oscillation of the nano-pillar magnetic moment Mz decreases by about 1GHz, while the oscillation amplitude increases monotonically.
Therefore, the oscillation characteristics of the oscillator obtained by the embodiment can be regulated by changing the width and the thickness of the base.
Example 2
In this example, the resulting nanopillar array of the all permalloy base structure was designed to be an 8 × 4 nanopillar array as shown in fig. 1 (b). The array consists of 32 nano-columns, the number of rows and columns of which is 4 and 8 respectively, and the row spacing (Y-axis direction) and the column spacing (X-axis direction) of which are 30nm and 100nm respectively. The size of the fixed base is 1000nm multiplied by 300nm multiplied by 30nm, and the size of the fixed nano-column is 20nm multiplied by 30 nm.
FIG. 4(a) is a simplified schematic diagram of a 2 × 2 nanorod array structure, and FIG. 4(b) is a diagram of a micromagnetic simulation performed at a current density of 1.86 × 10 in this embodiment12A/m2The obtained single nano-column and integral magnetic moment oscillation curves show that the mutual coupling state between the single nano-column and the integral magnetic moment oscillation curves is quite ideal, and as can be seen from table 1, the 2 × 2 nano-column array can achieve the mutual phase locking (synchronization) of magnetic moment oscillation signals of all the nano-columns relative to the single nano-column under the condition of keeping the frequency basically unchanged, so that the amplitude of the nano-column array oscillator is greatly improved, and the purpose of remarkably improving the integral power output of the device is realized.
TABLE 1
FIG. 5 is a graph showing the amplitude and frequency of oscillation of the magnetic moment Mz of the nanorod in the direction of the length of the pinned layer of the base (X axis) by applying a magnetic field to the 2 × 2 nanorod array oscillator of FIG. 4(a), where it can be seen that when the external magnetic field is opposite to the magnetic moment of the base, the amplitude is significantly increased; and when the external magnetic field is not lower than minus 30mT, the oscillation frequency is basically unchanged. Therefore, a magnetic field with the direction opposite to the direction of the magnetic moment of the fixed layer can be properly applied in the fixed layer, the oscillation amplitude of the magnetic moment of a single nano column is improved under the condition that the oscillation frequency of the nano column is not influenced, the phase locking of oscillation signals of each nano column is utilized, the amplitude of the nano column array oscillator is greatly improved, and the aim of greatly improving the integral power output of the array oscillator is fulfilled.
FIG. 6 is the 2 × 2 nanopillar array described for FIG. 4(a)The adjustment and control of the oscillation frequency of the magnetic moment Mz of the nano-pillar obtained when the oscillator loads the changed current density can be seen in that the current density is increased, the oscillation frequency of the magnetic moment of the nano-pillar is rapidly increased, the oscillation signals of the magnetic moments of the nano-pillars are mutually phase-locked, namely, the oscillation frequency of the magnetic moment of the single nano-pillar is the oscillation frequency of the whole magnetic moment of the nano-pillar array, therefore, the frequency of the nano-pillar array oscillator obtained in the embodiment can be greatly adjusted and controlled by changing the current density, and researches show that the working current range of the nano-pillar array oscillator device in the embodiment is about 1.3712A/m2To 1.04 × 1013A/m2It can be seen that the current density is an effective way to regulate the oscillation frequency of the magnetic moment of the device, and the controllable range is also large.
In a word, according to the all-permalloy base structure nanorod array microwave oscillator designed in this embodiment 2, only more nanorods need to be etched on the base, and then phase locking (synchronization) can be performed between magnetic moment oscillation signals of the nanorods, so that the amplitude of the nanorod array oscillator is greatly increased, and the overall power output of the device is significantly increased; in addition, a proper external magnetic field can be applied along the opposite direction of the magnetic moment of the base fixing layer, the oscillation amplitude of the magnetic moment of a single nano-pillar is improved under the condition of ensuring that the frequency is not changed, and then the oscillation signals of all the nano-pillars are mutually phase-locked, so that the overall amplitude and power output of the nano-pillar array oscillator designed in the embodiment 2 are rapidly improved. Since the nanopillar signals are phase-locked, the oscillation frequency of the magnetic moment of the single nanopillar is the oscillation frequency of the overall magnetic moment of the nanopillar array, and thus the frequency of the nanopillar array oscillator designed in the embodiment 2 can be adjusted and controlled within a wide range by the current density changed by loading.
Compared with a sandwich structure STNO and a double-layer STNO with a vortex domain wall, the spinning transfer torque nanorod microwave oscillator with the full permalloy base structure is simplest in structure, is formed by etching permalloy of the same material without special treatment, is simpler and more efficient in nano processing and manufacturing process, and provides more convenience and higher efficiency for industrial production. And easily make a plurality of nanopillars and form the array and distribute on the base, improve the oscillator integrated level. The invention provides a method for effectively regulating and controlling the motion state of magnetic moment in a nano-pillar by changing the size of the nano-pillar. The method is characterized in that the phase locking (in phase) of a plurality of nano-pillar magnetic moment oscillation signals is achieved by regulating the distance between the nano-pillars on the nano-pillar microwave oscillator with the base structure, and the amplitude and the power output of the oscillation signals of the nano-pillar array oscillator are greatly improved. The invention also provides a method for regulating and controlling the amplitude of the nano-pillar array oscillator by applying a variable external magnetic field and effectively regulating and controlling the frequency of the nano-pillar array oscillator by changing the direct current density.
It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. Further, it should also be understood that various alterations, modifications and/or variations can be made to the present invention by those skilled in the art after reading the technical content of the present invention, and all such equivalents fall within the protective scope defined by the claims of the present application.
Claims (10)
1. The spin transfer torque nano-column microwave oscillator is characterized by comprising a permalloy film made of a single material; etching the lower layer of the permalloy film into a flaky cuboid with the longest length, marking as a base and using the base as a fixed layer; the upper layer is etched into a nano-pillar with the longest height as a free layer.
2. The spin-transfer torque nanopillar microwave oscillator as claimed in claim 1, wherein the pinned layer has an in-plane magnetization direction; the free layer has a perpendicular magnetization direction.
3. The spin-transfer torque nanopillar microwave oscillator as claimed in claim 1, wherein the nanopillar is adjustable in size for regulating the state of magnetic moment motion inside the nanopillar; the base is adjustable in width and thickness and used for regulating and controlling the amplitude and frequency of magnetic moment oscillation of the nano-column.
4. The spin-transfer torque nanopillar microwave oscillator according to claim 1, wherein the base is etched with a plurality of nanopillars to form an array, and the pitch of the nanopillars is adjusted to lock the magnetic moment oscillation signals of the nanopillars in phase with each other.
5. The spin-transfer torque nanopillar microwave oscillator of claim 1, further comprising an externally applied magnetic field for modulating the oscillation amplitude of the single nanopillar oscillator.
6. The method for controlling a spin-transfer torque nanorod microwave oscillator according to any one of claims 1 to 5, wherein the motion state of the magnetic moment inside the nanorod is controlled by changing the size of the nanorod.
7. The method of any one of claims 1 to 5, wherein the amplitude and frequency of the spin-transfer torque nanopillar microwave oscillator are controlled by varying the width and thickness of the base.
8. The method for regulating a spin-transfer torque nanorod microwave oscillator according to any one of claims 1 to 5, wherein the plurality of nanorods are etched on the base to form an array, and the amplitude and power output of the spin-transfer torque nanorod microwave oscillator are regulated by regulating the spacing of the nanorods to enable magnetic moment oscillation signals of the nanorods to be phase-locked with each other.
9. The method of any one of claims 1 to 5, wherein the amplitude of the spin-transfer torque nanopillar microwave oscillator is controlled by applying an external magnetic field along the length of the base fixing layer.
10. The method for controlling a spin-transfer torque nanopillar microwave oscillator according to any one of claims 1 to 5, wherein the oscillation frequency of the spin-transfer torque nanopillar microwave oscillator is controlled by changing a current density.
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