CN111564396B - Method for calibrating manipulator of semiconductor processing equipment and semiconductor equipment - Google Patents
Method for calibrating manipulator of semiconductor processing equipment and semiconductor equipment Download PDFInfo
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- CN111564396B CN111564396B CN202010441062.1A CN202010441062A CN111564396B CN 111564396 B CN111564396 B CN 111564396B CN 202010441062 A CN202010441062 A CN 202010441062A CN 111564396 B CN111564396 B CN 111564396B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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Abstract
The invention provides a manipulator calibration method of semiconductor processing equipment and the semiconductor equipment. The manipulator calibration method comprises the following steps: forming a deposit on the bearing surface of the chuck; placing a test substrate on a bearing surface of a chuck by using a mechanical arm to be calibrated so as to attach particles of deposits to a contact surface of the test substrate, which is in contact with the bearing surface; establishing a first plane coordinate system corresponding to the bearing surface, and acquiring position coordinate data of the particles on the first plane coordinate system; calculating and obtaining the central offset of the center of the tested substrate relative to the center of the chuck according to the position coordinate data and the pre-obtained central position coordinate of the chuck; and calibrating the manipulator to be calibrated according to the central offset. By applying the invention, the calibration of the manipulator can be realized under the condition of not opening the cavity, so that the work of machine recovery and the like caused by opening the cavity is avoided, and the waste of cost such as labor, time and the like caused by the recovery of the machine is saved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a manipulator calibration method of semiconductor processing equipment and the semiconductor equipment.
Background
At present, the etching operation on the wafer is usually performed under specific gas and pressure environment, which is a very precise and delicate process. Therefore, in order to ensure a specific process environment of the etching chamber, the state close to vacuum needs to be maintained for a long time when the etching chamber is idle, and meanwhile, the state close to vacuum needs to be maintained for a long time when the transfer chamber responsible for transferring the wafer to the etching chamber is also maintained.
In the process of transferring the wafer from the transmission chamber to the etching chamber, the vacuum manipulator in the transmission chamber can place the center position of the wafer at the center position of the electrostatic chuck when transferring the wafer to the etching chamber so as to ensure the normal execution of the etching process.
The vacuum robot can keep the calibration state well after one calibration, usually in the process of transferring the wafer for many times, but the calibration state can not be kept forever. In the process, once misalignment occurs, the specific offset of the vacuum manipulator is unknown, so that the parameter value of the vacuum manipulator cannot be directly changed on the platform, the vacuum manipulator is often required to be calibrated by opening a cavity, the process environments of a transmission chamber and an etching chamber are affected, and adverse effects on the etching process result can be caused.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a manipulator calibration method of semiconductor processing equipment and the semiconductor processing equipment.
To achieve the object of the present invention, a first aspect provides a robot calibration method of a semiconductor processing apparatus, comprising the steps of:
s1, forming a deposit on a bearing surface of a chuck;
s2, placing a test substrate on the bearing surface of the chuck by using a manipulator to be calibrated so as to attach the particles of the sediments on the contact surface of the test substrate and the bearing surface; the area of the bearing surface of the chuck is smaller than or equal to the area of the test substrate;
s3, establishing a first plane coordinate system, wherein the first plane coordinate system corresponds to the bearing surface; acquiring position coordinate data of the particles on the first plane coordinate system based on each particle attached to the contact surface;
s4, calculating and obtaining the central offset of the center of the test substrate relative to the center of the chuck according to the position coordinate data of the particles on the first plane coordinate system and the pre-acquired central position coordinate of the chuck on the second plane coordinate system;
the second plane coordinate system and the first plane coordinate system have a preset incidence relation;
and S5, calibrating the manipulator to be calibrated according to the central offset.
Optionally, the step S4 further includes:
s41, calculating to obtain the actual central position coordinates of the test substrate when the test substrate is arranged on the chuck according to the position coordinate data of the particles on the first plane coordinate system;
and S42, calculating to obtain the center offset according to the actual center position coordinates of the test substrate and the known center position coordinates of the chuck.
Optionally, in the step S2, a plurality of uniformly distributed bumps are provided on the carrying surface of the chuck;
the step S41 further includes:
s411, obtaining position coordinate data of each convex point corresponding to the first plane coordinate system according to the incidence relation between the second plane coordinate system and the first plane coordinate system;
s412, taking the salient points as standard points, selecting the particles with position coordinates located in a specified range around the position coordinates of the standard points corresponding to each standard point, and taking the coordinates of the centers of all the selected particles as sampling center coordinates;
and S413, calculating and obtaining the actual central position coordinate of the test substrate based on the sampling central coordinates corresponding to all the standard points.
Optionally, the step S413 further includes:
and calculating a position average value based on all the sampling center coordinates corresponding to each standard point, and taking the average value as the actual center position coordinate of the test substrate.
Optionally, in the step S412, taking the bump as a standard point includes:
and taking the salient points with the distances from the center of the chuck larger than or equal to a first preset threshold value as standard points, wherein the particles are arranged in a specified range around the position coordinates of the standard points.
Optionally, the first preset threshold is less than or equal to 80mm.
Optionally, the specified range includes a circular surface with the standard point as a center, and a radius of the circular surface is smaller than or equal to a second preset threshold.
Optionally, the second preset threshold is less than or equal to 3mm.
Optionally, the test substrate includes a plurality of pieces, and the step S5 further includes:
and obtaining an arithmetic mean value of the plurality of central offset values based on the plurality of central offset values calculated by the plurality of test substrates, and calibrating the manipulator to be calibrated according to the arithmetic mean value.
To achieve the object of the present invention, in another aspect, there is provided a semiconductor apparatus including a deposition chamber, a robot, a controller, and an operating handle, wherein:
a chuck is arranged in the deposition chamber and used for bearing a bearing surface of the test substrate to form deposits;
the manipulator places a test substrate on the bearing surface of the chuck, on which the deposit is formed, so that particles of the deposit are attached to a contact surface of the test substrate, which is in contact with the bearing surface;
the controller calculates and obtains the central offset of the center of the test substrate relative to the center of the chuck based on the position coordinate data of each particle attached to the contact surface on a first plane coordinate system parallel to the bearing surface, the known center position coordinate of the chuck and the pre-acquired center position coordinate of the chuck on a second plane coordinate system; the second plane coordinate system and the first plane coordinate system have a preset incidence relation;
the operating handle is connected with the manipulator to calibrate the manipulator to be calibrated according to the central offset input from the operating handle.
The invention has the following beneficial effects:
the manipulator calibration method of the semiconductor processing equipment, provided by the invention, can calculate and obtain the central offset of the test substrate relative to the chuck by forming a deposit on the bearing surface of the chuck and attaching the particles of the deposit on the test substrate according to the position coordinate data of the particles and the pre-acquired central position coordinate of the chuck, and then can directly adjust the wafer placing position of the manipulator to be calibrated according to the central offset under the condition of not opening a cavity so as to realize the calibration of the manipulator.
Drawings
FIG. 1 is a flowchart of a method for calibrating a robot of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a first planar coordinate system including position coordinates of particles according to an embodiment of the present invention;
FIG. 3 is a schematic illustration of a first planar coordinate system including coordinates of positions of particles according to an embodiment of the present invention;
FIG. 4 is a first schematic view of a first part of a bump and particles around the bump after the first planar coordinate system and the first planar coordinate system are overlapped at the original points;
fig. 5 is a second schematic view of a part of the salient point and the particles around the salient point after the first plane coordinate system and the first plane coordinate system are overlapped.
Detailed Description
The present application is described in detail below and examples of embodiments of the present application are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements with the same or similar functionality throughout. In addition, if a detailed description of the known art is not necessary for illustrating the features of the present application, it is omitted. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application.
It will be understood by those within the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
The following describes the technical solutions of the present application and how to solve the above technical problems in specific embodiments with reference to the accompanying drawings.
The embodiment provides a robot calibration method of a semiconductor processing apparatus, which can be applied to (but not limited to) a vacuum chamber, and can be used for adjusting the wafer placing position of a robot in the vacuum chamber without opening the vacuum chamber. As shown in fig. 1, the robot calibration method may include the steps of:
step S1, forming a deposit on the bearing surface of the chuck.
In this embodiment, any process (e.g., physical vapor deposition, magnetron sputtering, spray deposition, etc.) that can produce a uniform deposition can be performed in the chamber without a wafer to form a layer of deposition on the bearing surface of the chuck for attaching particles to the test substrate in step S2 below. Wherein, the chuck can be a vacuum adsorption chuck, the bearing surface of the chuck can be an adsorption surface of the chuck, the adsorption force of the adsorption chuck is used for ensuring that the deposit can be attached on the test substrate, and the area of the bearing surface of the chuck is generally smaller than or equal to that of the test substrate. It should be noted that the vacuum chuck is only a preferred embodiment of the present invention, and the present invention is not limited thereto, as long as the deposition is formed on the carrying surface of the chuck and can be attached to the test substrate.
And S2, placing the test substrate on the bearing surface of the chuck by using the mechanical arm to be calibrated so that particles of deposits can be attached to the contact surface of the test substrate and the bearing surface.
In this embodiment, a clean test substrate for calibration may be placed upside down (with the surface for attaching deposits facing downward) in a wafer cassette (or other container for holding wafers), the wafer cassette holding the test substrate may be transferred into a vacuum chamber in which a robot to be calibrated operates, and then the robot to be calibrated may be used to fix the test substrate on the carrying surface of the Chuck (i.e., chuck is performed, for example, by turning on a vacuum system of a vacuum Chuck, and fixing the test substrate on the Chuck by an adsorption force), so that the surface of the test substrate may be in sufficient contact with the carrying surface of the Chuck, and sufficient particles of the deposits formed in step S1 may be attached to the contact surface of the test substrate in contact with the carrying surface. It should be noted that the above-mentioned operation is only one embodiment of the present embodiment, and the present embodiment is not limited thereto, as long as the particles of the deposit can be attached to the contact surface of the test substrate and the bearing surface of the chuck.
S3, establishing a first plane coordinate system, wherein the first plane coordinate system can correspond to the bearing surface; position coordinate data of the particles on the first planar coordinate system is acquired based on each of the particles attached to the contact surface.
And S4, calculating and obtaining the central offset of the center of the test substrate relative to the center of the chuck according to the position coordinate data of the particles on the first plane coordinate system and the pre-acquired central position coordinate of the chuck on the second plane coordinate system.
The first plane coordinate system corresponds to the bearing surface, and the plane where the first plane coordinate system is located is parallel to the bearing surface. The second planar coordinate system and the first planar coordinate system have a preset association relationship, and the association relationship may be: the second plane coordinate system is parallel to the plane of the first plane coordinate system, and the offset of the coordinate of the same point projected in the coordinate plane and falling in the two coordinate systems is consistent with the offset of the center of the test substrate relative to the center of the chuck when the test substrate is fixed on the chuck.
In this embodiment, a first planar coordinate system may be established based on the carrying surface, the position coordinates of each particle attached to the contact surface of the test substrate on the first planar coordinate system may be determined, and then the center offset of the center of the test substrate with respect to the center of the chuck may be calculated and obtained according to the position coordinate data and the pre-acquired center position coordinates of the chuck. In the determination of the position coordinates of the particles on the first plane coordinate system, the determination may be performed by using, but not limited to, an existing test base for particle point coordinate test, specifically, the test substrate with the particles attached thereto may be mounted on the test base (in this case, the center of the test substrate coincides with the center of the test base), the test base may be provided with a sensor (e.g., a photosensor, a position sensor, etc.) capable of sensing the particles attached to the plane, and may detect the position coordinates of the particles attached to the test substrate with respect to the center of the test substrate (with the center of the test substrate as reference coordinates), where a contact surface of the test substrate with the chuck may be regarded as a first plane in the first plane coordinate system, the resulting first plane coordinate system including the position coordinates of each particle is shown in fig. 2, where a larger number of small particles are particle points, a larger number of large circles (e.g., a dot with a lighter black color located right at the coordinates (150, 150) may be regarded as reference coordinates (also known as center position coordinates of the center of the chuck), and a larger circle point (e.g., a center point located near the coordinates of the chuck may be regarded as actual coordinates of the test substrate as the second plane coordinate system, i.e., as calculated as coordinates of the center coordinates of the test substrate described below.
It should be noted that the above-mentioned manner for determining the position coordinates of the particles is only a preferred embodiment of the present embodiment, and the present embodiment is not limited thereto, as long as the position coordinate data of the particle points on the test substrate can be determined, and the center offset of the test substrate relative to the chuck can be calculated and obtained according to the position coordinate data and the pre-acquired center position coordinates of the chuck. The particle distribution shown in fig. 2 is only an ideal distribution state of the particles attached to the test substrate, and may also be a distribution state of the particles in a certain test process, and fig. 2 is only an example of the first plane coordinate, and the embodiment is not limited thereto.
In one embodiment, the actual center position coordinates of the test substrate when placed on the bearing surface of the chuck by the robot to be calibrated may be calculated first, and then the center offset of the test substrate with respect to the chuck may be calculated. Accordingly, step S4 may further include: s41, calculating and obtaining the actual central position coordinate of the test substrate arranged on the chuck based on the position coordinate data of the particles on the first plane coordinate system; and step S42, calculating and obtaining the central offset of the center of the test substrate relative to the center of the chuck according to the actual central position coordinates of the test substrate and the known central position coordinates of the chuck.
In this embodiment, the coordinates of the actual center position of the test substrate may be understood as the coordinates of the center position of the test substrate determined by using the center of the chuck as reference coordinates when the test substrate is placed on the carrying surface of the chuck by the robot to be calibrated. The reference coordinates here may be the same as those of the test substrate used when determining the position coordinates of the particles, for example, (150 ) in fig. 2, or (0, 0), etc. When a test substrate is placed on a chuck, if the center position of the test substrate deviates, particles on the test substrate are not uniformly distributed on the whole contact surface of the test substrate, but wholly deviate towards the deviation direction of the test substrate, theoretically, in an area where the particles are attached to the contact surface of the test substrate, all the particles are uniformly distributed, a position average value is calculated according to the position coordinates of all the particles (namely, the position coordinate data is subjected to vector operation, and the average value is calculated), the position average value can be regarded as the center position coordinates of all the particles on the contact surface, further can be regarded as the actual center position coordinates (namely, center point coordinates) of the test substrate, and then the difference value is calculated according to the actual center position coordinates and the previously acquired center position coordinates of the chuck, so that the center deviation of the test substrate relative to the chuck is obtained.
Further, in step S2, a plurality of bumps may be uniformly distributed on the carrying surface of the chuck, deposits may be formed on top surfaces of the bumps, and particles of the deposits are formed at positions corresponding to the bumps when the test substrate is fixed on the chuck; accordingly, step S41 may further include: s411, obtaining position coordinate data of each salient point corresponding to the first plane coordinate system according to the incidence relation between the second plane coordinate system and the first plane coordinate system; s412, selecting particles with position coordinates located in a specified range around the position coordinates of the standard points corresponding to each standard point by taking the salient points as the standard points, and taking the coordinates of the centers of all the selected particles as sampling center coordinates; and S413, calculating to obtain the actual center position coordinates of the test substrate based on the sampling center coordinates corresponding to the standard points.
The bumps may be, but not limited to, bumps with a smaller area, which are disposed on the vacuum chuck corresponding to the positions of the suction holes. The position coordinate data of the salient point corresponding to the first plane coordinate system can be understood as that after the second plane coordinate system comprising the position coordinate of the salient point and the first plane coordinate system comprising the position coordinate of the particle are fitted together in a mode of overlapping the original points (namely, two coordinate graphs are overlapped together in a mode of overlapping the original points), the obtained position coordinate of the salient point is consistent with the coordinate of the salient point on the second plane coordinate system.
In this embodiment, the center of the chuck may be used as the reference coordinate to determine the position coordinates of each bump on the second planar coordinate system, and then the position coordinate data of each bump corresponding to the first planar coordinate system may be obtained according to the association relationship between the second planar coordinate system and the first planar coordinate system. Because the positions of the sediment particle points are formed corresponding to the positions of the bulges, a plurality of particle points are usually correspondingly generated around the bulges, and theoretically, if the position of the test substrate on the chuck does not deviate, the sediment particles can be uniformly formed around each bulge; if the position of the test substrate on the chuck is shifted, the particles corresponding to the deposits formed around each protrusion are also shifted accordingly. However, usually, the test substrate is shifted by a small amount, and then a proper specified range is selected, particles formed around a certain bump corresponding to the bump can be determined, and then the coordinates of the center of the particles are calculated as the coordinates of the sampling center according to the coordinates of the positions of the particles within the specified range around the bump, and then the coordinates of the actual center position of the test substrate are calculated based on the coordinates of the sampling center. In this way, when calculating the coordinates of the actual center position of the test substrate, the bumps on which the deposit particles are not formed in the above-specified range can be removed, and the particles generated due to impurities other than the deposits can be removed, so that the calculation result can be more accurate. It should be noted that the method for calculating the coordinates of the actual center position of the test substrate by using the bumps is only a preferred embodiment of the present invention, and the present embodiment is not limited thereto, as long as the coordinates of the actual center position of the test substrate can be determined according to the coordinates of the position of the particles.
It should be understood that, the bumps are used as the standard dots, and all the bumps may be used as the standard dots or some of the bumps may be used as the standard dots. Since the distribution of the deposit particles attached to the test substrate on the contact surface is shown in fig. 3, the distribution of the particles in the central area of the test substrate is relatively small and unstable, and therefore, the salient points and the particles around the salient points within a certain radius range in the center of the test substrate can be deleted and do not participate in the calculation, so as to further improve the calculation accuracy of the actual central position coordinates of the test substrate. Accordingly, in step S412, with the bumps as standard points, the following processes may be included: and taking the salient points with the distances from the center of the chuck larger than or equal to a first preset threshold value as standard points, wherein the particles are arranged in a specified range around the position coordinates of the standard points. The first preset threshold may be selected according to the actual distribution of the particles, so as to remove a relatively unstable region with less particle distribution. For example, in actual testing, most particles adhered to the test substrate are relatively uniformly and stably distributed at a distance of 80mm or more from the center of the chuck, and the first predetermined threshold may be (but is not limited to) set to be less than or equal to 80mm.
In addition, when the sampling center coordinate is calculated, the particles in the specified range around the salient point are selected for calculation, the specified range can be set according to the offset condition of the test substrate, so that the particles formed based on the salient point can be selected, and the specified range can include a circular surface with the standard point as the center of a circle, and the radius of the circular surface is smaller than or equal to the area of the second preset threshold value. Further, since the deviation of the vacuum robot is usually small and generally does not exceed 3mm, the second preset threshold may be less than or equal to 3mm, that is, as shown in fig. 4, the particles within 3mm from the standard point may be selected to calculate the sampling center coordinates, that is, the interference of the foreign particles may be eliminated, and the protruding points where no particles are formed as shown in fig. 5 may also be eliminated, so that the protruding points do not participate in the calculation, and the calculation accuracy of the actual center position coordinates of the test substrate may be further improved. In fig. 4 and 5, a large dot with a lighter color in the center of a circle indicates a bump, a small dot with a darker color around the bump indicates a particle, and a circle indicates a specified range around the bump.
In another embodiment, the position coordinates of all the particles may be replaced with all the sampling center coordinates corresponding to the respective standard points, based on all the sampling center coordinates, and then a vector average of the coordinates may be calculated, which may be regarded as the actual center position coordinates of the test substrate. Accordingly, step S413 further includes the following processing: and calculating the position average value based on all the sampling center coordinates corresponding to each standard point, and taking the average value as the actual center position coordinate of the test substrate. The calculation accuracy of the actual center position coordinates of the test substrate can be further improved by the averaging method. It should be noted that, this embodiment is not limited to this, and the actual center position coordinates of the test substrate can be obtained more accurately in actual calculation as a reference, and the adjustment can be performed flexibly. For example, some isolated values (other coordinate values are far away from the isolated values) can be removed, or the chuck center can be used as a symmetric center, a plurality of groups of symmetric salient points are selected as standard points, the sampling center coordinate is calculated according to the method, and then the actual center position coordinate of the test substrate is calculated.
It will be understood that the present embodiment may also directly calculate the difference between the coordinates of the sampling center and the coordinates of the bumps by using the bumps, i.e., the offset of the sampling center with respect to the bumps, and then calculate the average value of all the offsets, and regard the average value as the central offset of the test substrate with respect to the chuck.
And S5, calibrating the manipulator to be calibrated according to the central offset.
In this embodiment, a manual operator for calibrating the manipulator to be calibrated may be disposed on the machine platform, and an input value on the manual operator is adjusted according to the calculated central offset, so as to adjust a wafer placing position of the manipulator to be calibrated, thereby calibrating the manipulator to be calibrated. Specifically, if the calculated central offset is 0, it indicates that the test substrate does not offset, and the manipulator to be calibrated does not need to be calibrated; if the calculated central offset is not 0, the offset direction of the test substrate can be judged according to the positive and negative values, and then the adjustment is carried out in the direction opposite to the offset direction according to the absolute value of the central offset so as to calibrate the manipulator to be calibrated.
In another embodiment, the test substrate may include a plurality of pieces, and the step S5 may further include: and obtaining an arithmetic mean value of the plurality of central offset values based on the plurality of central offset values calculated by the plurality of test substrates, and calibrating the manipulator to be calibrated according to the arithmetic mean value.
In this embodiment, the process of calculating the center offset of the test substrate relative to the chuck may be implemented by using calculation software, and before calculation, a plurality of test substrates may be used to perform attachment of deposits and position coordinate determination of deposit particles, and then the center offset may be calculated for each test substrate, so as to improve the calibration reliability of the wafer placing position of the robot. Specifically, a deposition process is performed in a state where the chamber has no wafer, then particles of deposits are attached to any one of the test substrates, then the test substrate with the particles of deposits attached thereto is taken out, position coordinates of the particles are determined, and the particles of deposits are attached to the next test substrate, and this is performed for multiple times until position coordinate data of the particles on N test substrates can be determined, where N may be any value from 2 to 10, which is not specifically limited in this embodiment. And then, calculating the central offset of each test substrate by adopting calculation software, calculating an arithmetic mean value of all the central offsets, and adjusting the wafer placing position of the manipulator to be calibrated according to the arithmetic mean value, thereby calibrating the manipulator to be calibrated.
According to the manipulator calibration method of the semiconductor processing equipment, the deposit is formed on the bearing surface of the chuck, the particles of the deposit are attached to the test substrate, the central offset of the test substrate relative to the chuck can be calculated and obtained according to the position coordinate data of the particles and the pre-acquired central position coordinate of the chuck, and then the wafer placing position of the manipulator to be calibrated can be directly adjusted according to the central offset under the condition that a cavity is not opened so as to realize calibration of the manipulator.
Based on the same concept of the above robot calibration method for semiconductor processing equipment, the present embodiment further provides a semiconductor device, including a deposition chamber, a robot, a controller, and an operation handle, wherein: a chuck is arranged in the deposition chamber, and is used for bearing a bearing surface of the test substrate to form deposits; the manipulator places the test substrate on a bearing surface of the chuck, on which the sediment is formed, so that particles of the sediment are attached to a contact surface of the test substrate, which is in contact with the bearing surface; the controller calculates and obtains the central offset of the center of the tested substrate relative to the center of the chuck based on the position coordinate data of each particle attached to the contact surface on a first plane coordinate system parallel to the bearing surface, the known center position coordinate of the chuck and the pre-acquired center position coordinate of the chuck on a second plane coordinate system; the second plane coordinate system and the first plane coordinate system have a preset incidence relation; the operating handle is connected with the manipulator to calibrate the manipulator to be calibrated according to the center offset input from the operating handle.
The semiconductor device provided in this embodiment can at least achieve the beneficial effects that can be achieved by the above method for calibrating a manipulator of a semiconductor processing device, and details are not repeated here.
It will be understood that the above embodiments are merely exemplary embodiments adopted to illustrate the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, merely for convenience in describing the present invention and to simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention.
The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present application, it should be noted that, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, a fixed connection, a detachable connection, or an integral connection; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing is only a few embodiments of the present application and it should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present application, and that these improvements and modifications should also be considered as the protection scope of the present application.
Claims (10)
1. The manipulator calibration method of the semiconductor processing equipment is characterized by comprising the following steps:
s1, forming a deposit on a bearing surface of a chuck;
s2, placing a test substrate on the bearing surface of the chuck by using a manipulator to be calibrated so as to enable particles of the sediment to be attached to the contact surface of the test substrate, which is in contact with the bearing surface; the area of the bearing surface of the chuck is smaller than or equal to the area of the test substrate;
s3, establishing a first plane coordinate system, wherein the first plane coordinate system corresponds to the bearing surface; acquiring position coordinate data of the particles on the first plane coordinate system based on each particle attached to the contact surface;
s4, calculating and obtaining the central offset of the center of the test substrate relative to the center of the chuck according to the position coordinate data of the particles on the first plane coordinate system and the pre-acquired central position coordinate of the chuck on the second plane coordinate system;
the second plane coordinate system and the first plane coordinate system have a preset incidence relation;
and S5, calibrating the manipulator to be calibrated according to the central offset.
2. The robot calibration method of claim 1, wherein the step S4 further comprises:
s41, calculating to obtain the actual central position coordinates of the test substrate when the test substrate is arranged on the chuck according to the position coordinate data of the particles on the first plane coordinate system;
and S42, calculating to obtain the center offset according to the actual center position coordinates of the test substrate and the known center position coordinates of the chuck.
3. The robot calibration method of claim 2, wherein in the step S2, the carrying surface of the chuck has a plurality of bumps uniformly distributed thereon;
the step S41 further includes:
s411, obtaining position coordinate data of each convex point corresponding to the first plane coordinate system according to the incidence relation between the second plane coordinate system and the first plane coordinate system;
s412, taking the salient points as standard points, selecting the particles with position coordinates located in a specified range around the position coordinates of the standard points corresponding to each standard point, and taking the coordinates of the centers of all the selected particles as sampling center coordinates;
and S413, calculating and obtaining the actual central position coordinate of the test substrate based on the sampling central coordinates corresponding to all the standard points.
4. The robot calibration method of claim 3, wherein the step S413 further comprises:
and calculating a position average value based on all the sampling center coordinates corresponding to each standard point, and taking the average value as the actual center position coordinate of the test substrate.
5. The method for calibrating a robot hand according to claim 4, wherein the step S412, with the bumps as standard points, comprises:
and taking the salient points with the distances from the center of the chuck larger than or equal to a first preset threshold value as standard points, wherein the particles are arranged in a specified range around the position coordinates of the standard points.
6. The robot calibration method of claim 5, wherein the first preset threshold is less than or equal to 80mm.
7. The robot calibration method according to claim 4 or 5, wherein the specified range includes a circular surface centered on the standard point, and a radius of the circular surface is smaller than or equal to a second preset threshold.
8. The robot calibration method of claim 7, wherein the second predetermined threshold is 3mm or less.
9. The robot calibration method of any one of claims 1 to 6, wherein the test substrate comprises a plurality of pieces, and the step S5 further comprises:
and obtaining an arithmetic mean value of the plurality of central offset values based on the plurality of central offset values calculated by the plurality of test substrates, and calibrating the manipulator to be calibrated according to the arithmetic mean value.
10. A semiconductor device comprising a deposition chamber, a robot, a controller, and an operating handle, wherein:
a chuck is arranged in the deposition chamber, and a deposit is formed on a bearing surface of the chuck, which is used for bearing the test substrate;
the manipulator places a test substrate on the bearing surface of the chuck, on which the deposit is formed, so that particles of the deposit are attached to a contact surface of the test substrate, which is in contact with the bearing surface;
the controller calculates and obtains the central offset of the center of the test substrate relative to the center of the chuck based on the position coordinate data of each particle attached to the contact surface on a first plane coordinate system parallel to the bearing surface, the known central position coordinate of the chuck and the pre-acquired central position coordinate of the chuck on a second plane coordinate system; the second plane coordinate system and the first plane coordinate system have a preset incidence relation;
the operating handle is connected with the manipulator to calibrate the manipulator to be calibrated according to the central offset input from the operating handle.
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| CN113793320A (en) * | 2021-09-14 | 2021-12-14 | 西安诺瓦星云科技股份有限公司 | Method and device for determining offset of display unit, electronic equipment and storage medium |
| CN114280896B (en) * | 2021-12-28 | 2024-01-26 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Calibration method and device for mask handover station |
| CN115127849A (en) * | 2022-08-31 | 2022-09-30 | 拓荆科技(上海)有限公司 | Atmospheric transmission equipment testing device |
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