CN111555814A - Optically-controlled terahertz wave 3-bit encoder and encoding method - Google Patents
Optically-controlled terahertz wave 3-bit encoder and encoding method Download PDFInfo
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Abstract
The invention discloses a light-operated terahertz wave 3-bit encoder and an encoding method. The metal layer and the positioning mark are coated on the upper surface of the substrate layer; the coding structure is etched on the metal layer. The coding structure consists of a plurality of double-circle structures and a plurality of square structures; all the double-circle structures are arranged periodically, all the square structures are arranged periodically, and the double-circle arrays formed by all the double-circle structures and the square arrays formed by all the square structures are arranged in a staggered mode. The terahertz wave encoding and decoding device can control terahertz waves, can realize encoding of 3 bits, namely eight states, and greatly improves encoding capacity and information transmission capacity compared with the prior encoding structure. The resonance response of three frequency points can be controlled simultaneously, the frequency range of action is wider, and the frequency range of coding is wider. The invention has the characteristics of simple process, simple structure and high coding rate.
Description
Technical Field
The invention relates to the technical field of terahertz communication, in particular to a light-operated terahertz wave 3-bit encoder and an encoding method.
Background
Terahertz is an electromagnetic wave with a frequency of 0.1-10 THz, is between infrared and microwave in a frequency spectrum, and is a frequency band which is not fully developed. The frequency spectrum resource can reach dozens of GHz, and the communication requirement of ultrahigh transmission rate which can reach the Tbit/s level at the highest can be realized. Currently, the research and development of 6G technology are accelerated in the countries of the united states, europe, and the japanese, and the terahertz communication technology is considered as one of the 6G communication key technologies. However, the development of terahertz communication technology is restricted by the lack and low maturity of related terahertz devices. Therefore, the research on devices related to terahertz communication is particularly important at present.
At present, the coding device related to terahertz communication is mostly realized by adopting a multilayer metal structure, which includes a frequency selection surface with a complex structure, or realizes coding control by adjusting the phase of electromagnetic waves of different frequency bands. In addition, there are encoding schemes for programmable gate array control metasurfaces that have stringent requirements for optical paths. The existing terahertz coding device is not only complex in processing process and difficult to design, but also poor in coding effect. The terahertz waves transmitted by the encoders are not strong in directionality, and are not beneficial to signal reception of the terahertz time-domain spectroscopy system receiver. In addition, the existing transmission type terahertz wave encoder adopts a mechanical rotation method for encoding, the mechanical rotation machine restricts the modulation rate, and the terahertz communication requirement of high-speed encoding cannot be met.
With the continuous development of terahertz communication technology, it is an important subject to research a transmission-type terahertz wave encoder which can control terahertz waves, has a simple process, a simple structure and a high encoding rate.
Disclosure of Invention
The invention aims to solve the problem that the encoding rate of the existing terahertz wave encoder cannot meet the requirement of high-speed encoding, and provides an optically controlled terahertz wave 3-bit encoder and an encoding method.
In order to solve the problems, the invention is realized by the following technical scheme:
a light-operated terahertz wave 3-bit encoder comprises a substrate layer, a metal layer, a positioning mark and an encoding structure; the metal layer and the positioning mark are coated on the upper surface of the substrate layer; the coding structure is etched on the metal layer. The coding structure consists of a plurality of double-circle structures and a plurality of square structures; all the double-circle structures are arranged periodically, all the square structures are arranged periodically, and the double-circle arrays formed by all the double-circle structures and the square arrays formed by all the square structures are arranged in a staggered mode. Each double-circle structure is symmetrical about the longitudinal central axis and consists of an inner circle open ring and an outer circle open ring; the inner circle split ring is a hollow annular groove with a circular opening facing downwards, and the middle section of the inner circle split ring, namely the position opposite to the opening, is filled with a first semiconductor block; the outer circle split ring is a hollow annular groove with a circular opening facing upwards, and the middle section of the outer circle split ring, namely the position opposite to the opening, is filled with a second semiconductor block; the inner circle split ring and the outer circle split ring are independent of each other, the inner circle split ring is located on the inner side of the outer circle split ring, and centers of the inner circle split ring and the outer circle split ring are overlapped. Each square structure is symmetrical about the longitudinal central axis of the square structure and consists of a square open ring; the square split ring is a hollowed annular groove with an upward square opening, and the left diagonal angle and the right diagonal angle of the square split ring are symmetrically filled with the third semiconductor blocks.
In the above scheme, in the double-circle array, all the row distances RDouble circleAll equal, all column distances CDouble circleAre all equal and have a row spacing RDouble circleEqual to column pitch CDouble circle(ii) a In a square array, all of its row spacings RSquare shapeAll equal, all column distances CSquare shapeAre all equal to each other, andline spacing RSquare shapeEqual to column pitch CSquare shape(ii) a Simultaneously, R of a double-circle arrayDouble circleAnd column pitch CDouble circleEqual to the distance R of the square arraySquare shapeAnd column pitch CSquare shape。
In the above scheme, when 4 square structures surround the periphery of 1 double-circle structure, the center of the double-circle structure coincides with the intersection point of the diagonals of the 4 square structures.
In the above scheme, when 4 double-circle structures surround the periphery of 1 square structure, the center of the square structure coincides with the intersection point of the diagonals of the 4 double-circle structures.
In the scheme, the groove widths of the inner circle split ring and the outer circle split ring of the double-circle structure are equal to the groove widths of the square split ring of the square structure.
In the above aspect, the thicknesses of the first semiconductor block, the second semiconductor block, and the third semiconductor block are greater than or equal to the thickness of the metal layer.
In the above scheme, the resonant frequencies of the inner circle split ring and the first semiconductor block thereof are located at the frequency band C, the resonant frequencies of the outer circle split ring and the second semiconductor block thereof are located at the frequency band a, the resonant frequencies of the square split ring and the third semiconductor block thereof are located at the frequency band B, and the frequency band C, the frequency band a and the frequency band B are different frequency bands.
According to the encoding method realized by the optically controlled terahertz wave 3-bit encoder, terahertz waves emitted by a terahertz emitter are transmitted by the terahertz wave 3-bit encoder and then received by a terahertz receiver; in the process, a laser source emits laser to irradiate the high-speed digital micromirror system, different light passing patterns are formed by controlling the high-speed digital micromirror system, the laser is irradiated to different areas on the surface of the terahertz wave 3-bit encoder by utilizing the light passing patterns, and terahertz waves of the terahertz wave 3-bit encoder are controlled to present different digital state codes; namely:
when the second semiconductor block of the outer circle open ring, the third semiconductor block of the square open ring and the first semiconductor block of the inner circle open ring are all illuminated by laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded to be '000';
when the second semiconductor block of the outer circle open ring and the third semiconductor block of the square open ring are both illuminated by laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded to be '001';
when the second semiconductor block of the outer circle split ring and the first semiconductor block of the inner circle split ring are both illuminated by laser, the digital state code corresponding to the terahertz wave 3-bit encoder is '010';
when the second semiconductor block of the excircle split ring is illuminated by laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded to be "011";
when the third semiconductor block of the square open ring and the first semiconductor block of the inner circle open ring are both illuminated by laser light, the digital state corresponding to the terahertz wave 3-bit encoder is encoded to be 100;
when the third semiconductor block of the square open ring is illuminated by laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded into '101';
when the first semiconductor block of the inner circle split ring is illuminated by laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded into 110;
when the second semiconductor block of the outer circle open ring, the third semiconductor block of the square open ring and the first semiconductor block of the inner circle open ring are not illuminated by the laser, the digital state corresponding to the terahertz wave 3-bit encoder is encoded to be '111'.
Compared with the prior art, the terahertz wave encoding structure can control terahertz waves, can realize encoding of 3 bits, namely eight states, and greatly improves encoding capacity and information transmission capacity compared with the prior encoding structure. The resonance response of three frequency points can be controlled simultaneously, the frequency range of action is wider, and the frequency range of coding is wider. The invention has the characteristics of simple process, simple structure and high coding rate.
Drawings
FIG. 1 is a front view structural diagram of a light-controlled terahertz wave 3-bit encoder of the present invention;
FIG. 2 is an enlarged partial view of FIG. 1 taken at the dotted line;
FIG. 3 is a front view structural diagram of an encoding unit;
FIG. 4 is a side view structural diagram of an encoding unit;
FIG. 5 is a schematic diagram of an example of an application of the optically controlled terahertz wave 3-bit encoder of the present invention;
FIG. 6 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is encoded to "000";
FIG. 7 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is encoded as "001";
FIG. 8 is a schematic diagram of laser irradiation when the digital state code of the optically controlled terahertz wave 3-bit encoder of the present invention is "010";
FIG. 9 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is encoded to "011";
FIG. 10 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is encoded to "100";
FIG. 11 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is "101";
FIG. 12 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is encoded as "110";
FIG. 13 is a schematic diagram of laser irradiation when the digital state of the optically controlled terahertz wave 3-bit encoder of the present invention is "111";
FIG. 14 is a terahertz transmission spectrum of a light-operated terahertz wave 3-bit encoder of the present invention;
labeled as: 1. a substrate layer; 2. a metal layer; 3. a locating mark; 41. an inner circle split ring; 42. a first semiconductor block; 43. an excircle split ring; 44. a second semiconductor block; 45. a square split ring; 46. a third semiconductor block; 5. a terahertz transmitter; 6. a terahertz receiver; 7. an encoder; 8. a laser light source; 9. high speed digital micromirror systems.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings in conjunction with specific examples. It should be noted that directional terms such as "upper", "lower", "middle", "left", "right", "front", "rear", and the like, referred to in the examples, refer only to the direction of the drawings. Accordingly, the directions used are for illustration only and are not intended to limit the scope of the present invention.
Referring to fig. 1 and 2, an optically controlled terahertz wave 3-bit encoder includes a substrate layer 1, a metal layer 2, a positioning mark 3, and an encoding structure.
The substrate layer 1 serves as a base for the entire encoder 7, which is mainly made of an insulating material. In an embodiment of the invention, the substrate layer 1 is a square sapphire substrate. The thickness of the substrate layer 1 is 50-1000 microns. In a preferred embodiment of the invention, the substrate layer 1 has a thickness of 50 micrometers.
The metal layer 2 is arranged on the upper surface of the substrate layer 1. In the embodiment of the present invention, the metal layer 2 is a square metal coating and is located in the middle of the substrate layer 1, and the size of the metal layer 2 is slightly smaller than that of the substrate layer 1. The distance between the edge of the metal layer 2 and the edge of the substrate layer 1 is larger than 100 micrometers, and the thickness of the metal layer 2 is 0.1-0.5 micrometers. In a preferred embodiment of the invention the metal layer 2 has a thickness of 0.2 micrometer.
The positioning marks 3 are arranged on the upper surface of the substrate layer 1. In the encoding process of the encoder 7, there is a requirement on the polarization direction of the incident terahertz wave, so that the positioning mark 3 needs to be additionally arranged on the upper surface of the substrate layer 1 to mark the installation direction of the whole encoder 7. In an embodiment of the invention, the positioning mark 3 is a circular metal coating and is located at one of the diagonal corners of the substrate layer 1. The radius of the positioning mark 3 is less than 100 micrometers, and the thickness of the positioning mark 3 is 0.1-0.5 micrometers. In a preferred embodiment of the invention the metal layer 2 has a thickness of 0.2 micrometer.
The coding structure is a core structure of the whole encoder 7, and is arranged on the metal layer 2 in a hollow mode through etching. The coding structure mainly comprises a plurality of double-circle structures and a plurality of square structures. Each double-circular structure is entirely symmetrical about its longitudinal central axis and is composed of an inner circular split ring 41 and an outer circular split ring 43. The inner circle split ring 41 is a hollow annular groove with a circular opening facing downwards, and the inner circle split ring 41 penetrates through the metal layer 2 from top to bottom. The middle section of the inner circular split ring 41, i.e. opposite to its opening, is filled with a first semiconductor block 42. The outer circle split ring 43 is a hollow annular groove with a circular opening facing upwards, and the outer circle split ring 43 penetrates through the metal layer 2 from top to bottom. The middle section of the outer round split ring 43, i.e. opposite its opening, is filled with a second semiconductor block 44. The inner circle split ring 41 and the outer circle split ring 43 are independent of each other, the inner circle split ring 41 is located on the inner side of the outer circle split ring 43, and the centers of the two are overlapped. Each square structure is entirely symmetrical about its longitudinal central axis and consists of a square split ring 45. The square split ring 45 is a hollowed annular groove with an upward square opening, and the square split ring 45 penetrates through the metal layer 2 from top to bottom. The left and right two opposite corners of the square split ring 45 are symmetrically filled with third semiconductor blocks 46. In the embodiment of the invention, the inner circle split ring 41 and the outer circle split ring 43 of the double circle structure and the square split ring 45 of the square structure have the same groove width. The first semiconductor block 42, the second semiconductor block 44, and the third semiconductor block 46 are all silicon semiconductors, and have thicknesses that are greater than or equal to the thickness of the metal layer 2. The thicknesses of the first semiconductor block 42, the second semiconductor block 44 and the third semiconductor block 46 are all larger than the thickness of the metal layer 2 and are 0.5 to 1.4 micrometers.
All the double-circle structures are arranged periodically, all the square structures are arranged periodically, and the double-circle arrays formed by all the double-circle structures and the square arrays formed by all the square structures are arranged in a staggered mode. In an embodiment of the present invention, for a double circular array, all of its row spacings RDouble circleAll equal, all column distances CDouble circleAre all equal and have a row spacing RDouble circleEqual to column pitch CDouble circle. For a square array, all of its row spacings RSquare shapeAll equal, all column distances CSquare shapeAre all equal and have a row spacing RSquare shapeEqual to column pitch CSquare shape. At the same time, the row spacing R of the double-circle arrayDouble circleAnd column pitch CDouble circleEqual to the row spacing R of the square arraySquare shapeAnd column pitch CSquare shape. At this time, when the periphery of 1 double-circle structure is surrounded by 4 square structuresThen the center of the double circle coincides with the intersection of the diagonals of the 4 squares. When 4 double-circle structures surround the periphery of 1 square structure, the center of the square structure coincides with the intersection point of the diagonals of the 4 double-circle structures.
For convenience of description, the coding structure of the entire encoder 7 may be divided into N × N coding units arranged periodically. Each coding unit is shown in fig. 3 and 4 and comprises a first substructure, a second substructure and a third substructure. The first substructure is located at the center of the coding unit, being an inner circular open ring 41 and its first semiconductor block 42. The second substructure is located radially outward of the first substructure and is an outer split ring 43 and its second semiconductor block 44. The third sub-structure is located radially outside the second sub-structure, and is one of the sides of the 4 square split rings 45 around the outer round split ring 43 and the third semiconductor block 46 thereof. In the preferred embodiment, the inner circular split ring 41 of the first substructure has an outer diameter of 20 microns, an inner diameter of 12 microns, and an opening length of 12 microns; the first semiconductor block 42 has a length of 16 microns and a thickness of 0.5 microns. The outer diameter of the outer circle split ring 43 of the second substructure is 35 microns, the inner diameter is 27 microns, and the length of the opening is 20 microns; the second semiconductor tile 44 has a length of 20 microns and a thickness of 0.5 microns. The square open ring 45 of the third substructure has an outer diameter of 42 microns, an inner diameter of 28 microns, and an opening length of 10 microns; the third semiconductor tile 46 has a length of 10 microns and a thickness of 0.5 microns.
Fig. 5 is a schematic diagram of an application example of the optically controlled terahertz wave 3-bit encoder 7 of the present invention, which includes a laser light source 8, a high-speed digital micromirror system 9, a terahertz transmitter 5, a terahertz receiver 6, and the optically controlled terahertz wave 3-bit encoder 7. The terahertz wave emitted by the terahertz emitter 5 is polarized along the Y-axis direction and is transmitted to the encoder 7 along the optical path in the Z-axis direction, and is transmitted to the terahertz receiver 6 along the optical path after being transmitted by the encoder 7. Meanwhile, after being reflected by the high-speed digital micromirror system 9, the laser emitted by the laser source 8 irradiates the semiconductor on the upper surface of the encoder 7 in the form of parallel light, so that the resonance response generated by the encoder 7 is controlled, and the terahertz waves transmitted by the encoder 7 are controlled to present different digital state codes. The terahertz regulation and control method adopted by the invention is laser active control. The laser light source 8 of the method is pulse laser, and the laser emitted by the laser forms a bright and dark irradiation pattern after passing through the high-speed digital micro-mirror system 9, so that the bright and dark areas of the laser can be controlled. When laser irradiates a semiconductor in a certain area, a large number of photon-generated carriers are excited, and the conductivity of the semiconductor reaches more than tens of thousands of photon-generated carriers in picosecond magnitude. At the moment, the original electromagnetic response structure of the area is changed, the passband frequency of the area is changed, the originally transmitted terahertz is restrained from being transmitted, and the function of one switch is realized. Therefore, the brightness of the semiconductor in the area determines that the open resonant ring where the semiconductor is located can not generate the resonant peak, i.e. corresponding to 0 and 1 of the code.
In the present invention, the resonant frequency of the first substructure, i.e., the inner circle split ring 41 and the first semiconductor block 42 thereof, is located at the frequency band C, the resonant frequency of the second substructure, i.e., the outer circle split ring 43 and the second semiconductor block 44 thereof, is located at the frequency band a, the resonant frequency of the third substructure, i.e., the square split ring 45 and the third semiconductor block 46 thereof, is located at the frequency band B, and the values of the frequency band C, the frequency band a and the frequency band B are different. In the embodiment of the invention, the value of the frequency band A ranges from 0.1THz to 1THz, the value of the frequency band B ranges from 0.3 THz to 2THz, and the value of the frequency band C ranges from 0.5 THz to 3 THz. In the preferred embodiment of the present invention, the frequency band a is 0.3268THz, the frequency band B is 0.4897THz, and the frequency band C is 0.6985 THz.
Eight digital state codes of the optically controlled terahertz wave 3-bit encoder 7 are represented by 3-bit binary codes 000, 001, 010, 011, 100, 101, 110 and 111, wherein the numbers of the first bit, the second bit and the third bit in the codes respectively represent the digital states of the terahertz wave transmissivity of the frequency band A, the frequency band B and the frequency band C. Hertzian wave transmission is bounded by 30%: a low transmittance is considered when the transmittance is below 30%, and the digital state is coded as "0". High transmittance is considered when the transmittance is higher than 30%, and the digital state is coded as "1".
Referring to fig. 6, when the light transmission pattern of the high-speed dmd 9 is set to be all light transmission, that is, the second semiconductor block 44 of the outer circular open ring 43, the third semiconductor block 46 of the square open ring 45, and the first semiconductor block 42 of the inner circular open ring 41 are illuminated by laser light, the second semiconductor block 44, the third semiconductor block 46, and the first semiconductor block 42 are all excited to generate photo-generated carriers, so that dipole resonance corresponding to the frequency band A, B, C disappears, and the thz wave 3-bit encoder 7 has low transmittance in the frequency band A, B, C, and its corresponding digital state is encoded to "000".
Referring to fig. 7, when the light transmission pattern of the high-speed dmd 9 is set to the second semiconductor block 44 of the outer circular open ring 43 and the third semiconductor block 46 of the square open ring 45, both of which are illuminated by laser light, the second semiconductor block 44 and the third semiconductor block 46 are excited to generate photo-generated carriers, and the thz wave 3-bit encoder 7 has low transmittance in the frequency bands a and B and high transmittance in the frequency band C, and the corresponding digital state is encoded to "001".
Referring to fig. 8, when the light transmission pattern of the high-speed digital micromirror system 9 is set such that the second semiconductor block 44 of the outer circular open ring 43 and the first semiconductor block 42 of the inner circular open ring 41 are both illuminated by laser light, the second semiconductor block 44 and the first semiconductor block 42 are excited to generate photo-generated carriers, and the terahertz wave 3-bit encoder 7 has low transmittance in the frequency bands a and C and high transmittance in the frequency band B, and the corresponding digital state is encoded to "010".
Referring to fig. 9, when the second semiconductor block 44 with the light-passing pattern of the high-speed digital micromirror system 9 arranged as the outer circle open ring 43 is illuminated by laser light, the second semiconductor is excited to generate photo-generated carriers, and the terahertz wave 3-bit encoder 7 has low transmittance in the frequency band a and high transmittance in the frequency bands B and C, and the corresponding digital state is encoded to "011".
Referring to fig. 10, when the light transmission pattern of the high-speed digital micromirror system 9 is set to the third semiconductor block 46 of the square open ring 45 and the first semiconductor block 42 of the inner circle open ring 41 both illuminated by laser light, the third semiconductor block 46 and the first semiconductor block 42 are excited to generate photo-generated carriers, and the terahertz wave 3-bit encoder 7 has low transmittance in the frequency bands B and C and high transmittance in the frequency band a, and the corresponding digital state is encoded to "100".
Referring to fig. 11, when the third semiconductor block 46 with the light-passing pattern of the high-speed digital micromirror system 9 arranged as the square open ring 45 is illuminated by laser light, the third semiconductor block 46 is excited to generate photo-generated carriers, and the terahertz wave 3-bit encoder 7 has low transmittance in the frequency band B and high transmittance in the frequency bands a and C, and the corresponding digital state is encoded as "101".
Referring to fig. 12, when the first semiconductor block 42 of the high-speed digital micromirror system 9, whose light transmission pattern is set as the inner circle open ring 41, is illuminated by laser light, the first semiconductor block 42 is excited to generate photo-generated carriers, and the terahertz wave 3-bit encoder 7 has low transmittance in the frequency band C and high transmittance in the frequency bands a and B, and the corresponding digital state is encoded as "110".
Referring to fig. 13, when the light transmission pattern of the high-speed digital micromirror system 9 is set to be completely non-light-transmitting, that is, the second semiconductor block 44 of the outer circular open ring 43, the third semiconductor block 46 of the square open ring 45 and the first semiconductor block 42 of the inner circular open ring 41 are not illuminated by laser light, no photogenerated carrier is excited from the second semiconductor block 44, the third semiconductor block 46 and the first semiconductor block 42, and the terahertz wave 3-bit encoder 7 has high transmittance in the frequency band A, B, C, and the corresponding digital state code is "111".
Fig. 14 is a terahertz transmission spectrum obtained by the terahertz receiver 6. In the figure, the ordinate is the transmission, with a maximum of 1, i.e. 100% transmission; the abscissa is frequency in THz; the three vertical dashed lines indicate that the transmittance at 0.3268THz for band a, 0.4897THz for band B, and 0.6985THz for band C determine the digital state code;
the terahertz transmission spectrum with digital state coding of '000' has minimum transmittance values at 0.3268THz of a frequency band A, 0.4897THz of the frequency band B and 0.6985THz of the frequency band C, the transmittance at 0.3268THz of the frequency band A is 16%, the transmittance at 0.4897THz of the frequency band B is 18%, the transmittance at 0.6985THz of the frequency band C is 13%, and the transmittance is low;
the transmittance of the terahertz transmission spectrum digitally encoded as "001" at 0.3268THz of the frequency band a is 15%, and the transmittance at 0.4897THz of the frequency band B is 16.5%, which is low transmittance; the transmittance at 0.6985THz of band C is 50%, which is high transmittance;
the transmittance of a terahertz transmission spectrum with digital state coding of '010' at 0.3268THz of a frequency band A is 15%, and the terahertz transmission spectrum is low in transmittance; the transmittance at 0.4897THz of band B was 56.7%, which is high transmittance; the transmittance at 0.6985THz of band C was 8%, which is low transmittance;
the transmittance of the terahertz transmission spectrum with digital state coding of "011" at 0.3268THz of the frequency band a is 14%, which is low transmittance; the transmittance at 0.4897THz of band B was 57%, which is high transmittance; the transmittance at 0.6985THz of band C is 50%, which is high transmittance;
the transmittance of the terahertz transmission spectrum with digital state coding of 100 at 0.3268THz of the frequency band a is 52%, which is high transmittance; the transmittance at 0.4897THz of band B was 17.8%, which is low transmittance; the transmittance at 0.6985THz of band C was 13%, which is low transmittance;
the transmittance of the terahertz transmission spectrum with digital state coding of '101' at 0.3268THz of the frequency band a is 67%, which is high transmittance; the transmittance at 0.4897THz of band B was 16%, which is low transmittance; the transmittance at 0.6985THz of band C was 67%, which is high transmittance;
the transmittance of the terahertz transmission spectrum with digital state coding of '110' at 0.3268THz of the frequency band a is 52%, which is high transmittance; the transmittance at 0.4897THz of band B was 65%, which is high transmittance; the transmittance at 0.6985THz of band C was 10%, which is low transmittance;
the transmittance of the terahertz transmission spectrum with the digital state code of '111' at 0.3268THz of the frequency band a is 66%, which is high transmittance; the transmittance at 0.4897THz of band B was 63%, which is high transmittance; the transmittance at 0.6985THz of the frequency band C was 67%, which is a high transmittance.
It is obvious from the above that, the positions of the terahertz transmitter 5, the terahertz encoder 7, the terahertz receiver 6, the laser light source 8 and the high-speed digital micromirror system 9 are all fixed, the polarization direction of the terahertz wave is also fixed, and only by changing the light passing pattern of the high-speed digital micromirror system 9, that is, changing the laser illumination area of the terahertz encoder 7, eight digital state encoding of 000, 001, 010, 011, 100, 101, 110 and 111 at the frequency band a, the frequency band B and the frequency band C is realized, so as to realize the encoding function.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. An optically-controlled terahertz wave 3-bit encoder comprises a substrate layer (1), a metal layer (2), a positioning mark (3) and an encoding structure; the metal layer (2) and the positioning mark (3) are coated on the upper surface of the substrate layer (1); the coding structure is etched on the metal layer (2); the method is characterized in that:
the coding structure consists of a plurality of double-circle structures and a plurality of square structures; all the double-circle structures are arranged periodically, all the square structures are arranged periodically, and the double-circle arrays formed by all the double-circle structures and the square arrays formed by all the square structures are arranged in a staggered manner;
each double-circle structure is symmetrical about the longitudinal central axis and consists of an inner circle open ring (41) and an outer circle open ring (43); the inner circle split ring (41) is a hollow annular groove with a circular opening facing downwards, and the middle section of the inner circle split ring (41), namely the position opposite to the opening, is filled with a first semiconductor block (42); the outer circle split ring (43) is a hollowed annular groove with a circular opening facing upwards, and the middle section of the outer circle split ring (43), namely the position opposite to the opening, is filled with a second semiconductor block (44); the inner circle split ring (41) and the outer circle split ring (43) are mutually independent, the inner circle split ring (41) is positioned on the inner side of the outer circle split ring (43), and the centers of the inner circle split ring and the outer circle split ring are overlapped;
each square structure is symmetrical about the longitudinal central axis of the square structure and consists of a square open ring (45); the square open ring (45) is a hollowed annular groove with an upward square opening, and the left and right opposite corners of the square open ring (45) are symmetrically filled with third semiconductor blocks (46).
2. The optically controlled terahertz wave 3-bit encoder according to claim 1, wherein: in a double circular array, all of its row spacings RDouble circleAll equal, all column distances CDouble circleAre all equal and have a row spacing RDouble circleEqual to column pitch CDouble circle；
In a square array, all of its row spacings RSquare shapeAll equal, all column distances CSquare shapeAre all equal and have a row spacing RSquare shapeEqual to column pitch CSquare shape；
Simultaneously, R of a double-circle arrayDouble circleAnd column pitch CDouble circleEqual to the distance R of the square arraySquare shapeAnd column pitch CSquare shape。
3. The optically controlled terahertz wave 3-bit encoder according to claim 1 or 2, wherein: when 4 square structures surround the periphery of 1 double-circle structure, the center of the double-circle structure coincides with the intersection point of the diagonals of the 4 square structures.
4. The optically controlled terahertz wave 3-bit encoder according to claim 1 or 2, wherein: when 4 double-circle structures surround the periphery of 1 square structure, the center of the square structure coincides with the intersection point of the diagonals of the 4 double-circle structures.
5. The optically controlled terahertz wave 3-bit encoder according to claim 1, wherein: the groove widths of the inner circle open ring (41) and the outer circle open ring (43) of the double circle structure are equal to the groove width of the square open ring (45) of the square structure.
6. The optically controlled terahertz wave 3-bit encoder according to claim 1, wherein: the thicknesses of the first semiconductor block (42), the second semiconductor block (44), and the third semiconductor block (46) are greater than or equal to the thickness of the metal layer (2).
7. The optically controlled terahertz wave 3-bit encoder according to claim 1, wherein: the resonant frequency of the inner circle open ring (41) and the first semiconductor block (42) thereof is located in a frequency band C, the resonant frequency of the outer circle open ring (43) and the second semiconductor block (44) thereof is located in a frequency band A, the resonant frequency of the square open ring (45) and the third semiconductor block (46) thereof is located in a frequency band B, and the frequency band C, the frequency band A and the frequency band B are different frequency bands.
8. The encoding method implemented by the optically controlled 3-bit terahertz wave encoder according to claim 1, wherein the terahertz wave emitted by the terahertz transmitter (5) is transmitted by the 3-bit terahertz wave encoder (7) and then received by the terahertz receiver (6); in the process, a laser source (8) emits laser to irradiate the high-speed digital micromirror system (9), different light passing patterns are formed by controlling the high-speed digital micromirror system (9), the laser is irradiated to different areas on the surface of the terahertz wave 3-bit encoder (7) by utilizing the light passing patterns, and the terahertz waves of the terahertz wave 3-bit encoder (7) are controlled to present different digital state codes; the method is characterized in that:
when the second semiconductor block (44) of the outer circle open ring (43), the third semiconductor block (46) of the square open ring (45) and the first semiconductor block (42) of the inner circle open ring (41) are all illuminated by laser light, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be '000';
when the second semiconductor block (44) of the outer circle open ring (43) and the third semiconductor block (46) of the square open ring (45) are both illuminated by laser light, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be '001';
when the second semiconductor block (44) of the outer circle split ring (43) and the first semiconductor block (42) of the inner circle split ring (41) are both illuminated by laser light, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be '010';
when the second semiconductor block (44) of the outer circle split ring (43) is illuminated by laser, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be 011;
when the third semiconductor block (46) of the square open ring (45) and the first semiconductor block (42) of the inner round open ring (41) are both illuminated by laser light, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be 100;
when the third semiconductor block (46) of the square open ring (45) is illuminated by laser, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded into '101';
when the first semiconductor block (42) of the inner circle open ring (41) is illuminated by laser, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded into 110;
when the second semiconductor block (44) of the outer round open ring (43), the third semiconductor block (46) of the square open ring (45) and the first semiconductor block (42) of the inner round open ring (41) are not illuminated by the laser, the corresponding digital state of the terahertz wave 3-bit encoder (7) is encoded to be '111'.
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