CN111555644B - Alternating current-direct current conversion circuit based on MOS pipe - Google Patents
Alternating current-direct current conversion circuit based on MOS pipe Download PDFInfo
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- CN111555644B CN111555644B CN202010553909.5A CN202010553909A CN111555644B CN 111555644 B CN111555644 B CN 111555644B CN 202010553909 A CN202010553909 A CN 202010553909A CN 111555644 B CN111555644 B CN 111555644B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention provides an alternating current-direct current conversion circuit based on an MOS (metal oxide semiconductor) tube, which comprises a positive half-cycle conversion circuit and a negative half-cycle conversion circuit. According to the invention, the rapid conduction and the turn-off of the main switch MOS tube are realized by controlling and adjusting the grid electrode of the main switch MOS tube, so that the generation of reverse leakage current in the reverse process of the alternating current power supply voltage is reduced, and the energy conversion efficiency and the system stability are improved. According to the invention, the gate-source voltage of the output control MOS tube is regulated, so that the conduction voltage drop of the related MOS tube is reduced, and the system power consumption is effectively reduced; the invention further improves the energy conversion efficiency of the system by introducing the discharge current of the capacitor in the circuit to the output end as the output current component for output.
Description
Technical Field
The invention relates to the design of an alternating current-direct current conversion circuit system, in particular to the design of an alternating current-direct current conversion circuit based on an MOS (metal oxide semiconductor) tube.
Background
The alternating current-direct current conversion circuit can convert alternating current into direct current with stable voltage value to be output so as to supply the direct current to an electricity utilization module which needs to work by stable direct current. Because the MOS tube has certain time delay in the processes of conduction and disconnection, the AC-DC conversion circuit constructed based on the MOS tube is difficult to avoid the generation of reverse leakage current in the working process. The reverse leakage current greatly affects the conversion efficiency of the ac-dc conversion circuit, and deteriorates the stability of the system. Aiming at the problems, the invention provides an MOS tube-based alternating current-direct current conversion circuit which can basically eliminate reverse leakage current.
Disclosure of Invention
The invention aims to solve the technical problem of providing an alternating current-direct current conversion circuit based on an MOS tube.
The technical scheme of the invention is as follows:
an alternating current-direct current conversion circuit based on a Metal Oxide Semiconductor (MOS) tube comprises a positive half-cycle conversion circuit and a negative half-cycle conversion circuit. When the output voltage of the alternating current power supply VAC is in a positive half period, the MOS tube M24 is conducted, the MOS tube M23 is turned off, the negative half period conversion circuit does not work, the positive half period conversion circuit works, and the alternating current power supply VAC outputs electric energy through the MOS tube M31 and the port VO. When the output voltage of the alternating current power supply VAC is in a negative half period, the MOS tube M23 is conducted, the MOS tube M24 is turned off, the positive half period conversion circuit does not work, the negative half period conversion circuit works, and the alternating current power supply VAC outputs electric energy through the MOS tube M34 and the port VO. According to the invention, through the arrangement of the circuit structure, the compensation current and the rapid discharge path are provided for the grids of the MOS transistor M23 and the MOS transistor M24, so that the MOS transistor M23 and the MOS transistor M24 can be rapidly switched on and off, and the reverse leakage current in the power supply voltage reverse process is obviously reduced. The invention changes the terminal voltage of the base bodies of the MOS transistor M23 and the MOS transistor M24 and the parasitic PN junction structure through the arrangement of the circuit structure, so that reverse leakage current paths from the base bodies to the drain electrodes of the MOS transistors M23 and M24 are blocked, and the reverse leakage current in the reverse process of the power supply voltage is further reduced. According to the invention, through the arrangement of the circuit structure, the conduction voltage drop of the MOS transistor M31 and the MOS transistor M34 is obviously reduced, and the AC-DC conversion efficiency is effectively improved. According to the invention, through the arrangement of the circuit structure, the discharge currents of the capacitor C1 and the capacitor C2 are output as output currents through the port VO, and the AC-DC conversion efficiency is further improved.
In the alternating current-direct current conversion circuit based on the MOS tube, a positive half-cycle conversion circuit comprises an alternating current power supply VAC, MOS tubes M1 to M11, MOS tubes M23, M25, M26, M29, M31, M32, M35, a capacitor C1, a capacitor C3, a resistor R1 and a port VO. The related circuit connection structures of the MOS transistors M1 to M11 provide a compensation current and a fast discharge path for the gate of the MOS transistor M23, so that the MOS transistor M23 can be turned on and off fast, and the generation of reverse leakage current in the power supply voltage reverse process is further reduced obviously. The base ends of the MOS tubes M25 and M26 are respectively connected with the base end of the MOS tube M23. The related connection structure of the MOS transistor M25 and the MOS transistor M26 changes the substrate end voltage and the parasitic PN junction structure of the MOS transistor M23, so that a reverse leakage current path from the substrate of the MOS transistor M23 to the drain electrode is blocked, and the reverse leakage current in the power supply voltage reversing process is further reduced. The related connection structure of the MOS tubes M29 and M32 and the capacitor C1 reduces the on-resistance of the MOS tube M31 by adjusting the grid-source voltage of the MOS tube M31, further reduces the on-voltage drop of the MOS tube M31, and improves the conversion efficiency of the power supply. When the output voltage of the power supply VAC changes from a positive half cycle to a negative half cycle, the MOS transistor M29 provides a discharge path for the capacitor C1, and introduces the discharge current of the capacitor C1 into the output current path, and outputs the discharge current as an output current component through the port VO. The related circuit structures of the MOS transistor M35, the capacitor C3 and the resistor R1 can stabilize the system operation condition and ensure that the output voltage is stable and unchanged under the conditions of external interference and input and output current change.
In the positive half-cycle conversion circuit, the drain of a MOS tube M1 is connected with the upper end of a power supply VAC, the gate of a MOS tube M1 is connected with the gate of a MOS tube M2, and the source of a MOS tube M1 is connected with the drain of a MOS tube M3. The source electrode of the MOS transistor M2 is connected with the source electrode of the MOS transistor M5, the gate electrode of the MOS transistor M2 is connected with the gate electrode of the MOS transistor M23, and the drain electrode of the MOS transistor M2 is grounded. The source of MOS pipe M3 is connected with the upper end of power VAC, the grid of MOS pipe M3 is connected with the grid of MOS pipe M4, and the drain of MOS pipe M3 is connected with the drain of MOS pipe M5. The source of MOS transistor M4 is connected to the upper end of power VAC, the gate of MOS transistor M4 is connected to the drain of MOS transistor M3, and the drain of MOS transistor M4 is connected to the drain of MOS transistor M6. The drain of MOS transistor M5 is connected to the source of MOS transistor M1, the gate of MOS transistor M5 is connected to the gate of MOS transistor M6, and the source of MOS transistor M5 is connected to the drain of MOS transistor M7. The drain of MOS transistor M6 is connected to the gate of MOS transistor M9, the gate of MOS transistor M6 is connected to the drain of MOS transistor M5, and the source of MOS transistor M6 is connected to the drain of MOS transistor M8. The drain of the MOS transistor M7 is connected with the source of the MOS transistor M2, the gate of the MOS transistor M7 is connected with the gate of the MOS transistor M8, and the source of the MOS transistor M7 is grounded. The drain of MOS transistor M8 is connected to the gate of MOS transistor M10, the gate of MOS transistor M8 is connected to the drain of MOS transistor M7, and the source of MOS transistor M8 is grounded. The source of MOS pipe M9 is connected with the upper end of power VAC, the grid of MOS pipe M9 is connected with the grid of MOS pipe M10, and the drain of MOS pipe M9 is connected with the drain of MOS pipe M10. The drain of MOS transistor M10 is connected to the gate of MOS transistor M23, the gate of MOS transistor M10 is connected to the gate of MOS transistor M11, and the source of MOS transistor M10 is connected to the drain of MOS transistor M11. The drain of MOS transistor M11 is connected to the gate of MOS transistor M23, the gate of MOS transistor M11 is connected to the drain of MOS transistor M8, and the source of MOS transistor M11 is grounded. The source of MOS transistor M23 is connected to the upper end of power VAC, the gate of MOS transistor M23 is connected to the drain of MOS transistor M10, the drain of MOS transistor M23 is grounded, and the substrate of MOS transistor M23 is connected to the substrate of MOS transistor M25. The drain electrode of the MOS tube M25 is connected with the upper end of a power supply VAC, the gate electrode of the MOS tube M25 is connected with the drain electrode of the MOS tube M26, the source electrode of the MOS tube M25 is connected with the source electrode of the MOS tube M26, and the substrate end of the MOS tube M25 is connected with the substrate end of the MOS tube M26. The source electrode of the MOS tube M26 is connected with the substrate end of the MOS tube M23, the gate electrode of the MOS tube M26 is connected with the drain electrode of the MOS tube M25, the drain electrode of the MOS tube M26 is grounded, and the substrate end of the MOS tube M26 is connected with the substrate end of the MOS tube M23. The drain of MOS pipe M29 is connected with the gate of MOS pipe M31, the gate of MOS pipe M29 is connected with the gate of MOS pipe M2, and the source of MOS pipe M29 is connected with the lower end of power VAC. The source of MOS pipe M31 is connected with the upper end of power VAC, the grid of MOS pipe M31 is connected with the grid of MOS pipe M32, and the drain of MOS pipe M31 is connected with port VO. The source of MOS transistor M32 is connected to the drain of MOS transistor M31, the gate of MOS transistor M32 is connected to the drain of MOS transistor M32, and the drain of MOS transistor M32 is connected to the gate of MOS transistor M35. The upper end of the capacitor C1 is connected with the drain electrode of the MOS tube M32, and the lower end of the capacitor C1 is grounded. The drain of the MOS transistor M35 is connected to the port VO, the gate of the MOS transistor M35 is connected to the gate of the MOS transistor M32, and the source of the MOS transistor M35 is connected to the upper end of the capacitor C3. The upper end of the resistor R1 is connected with the lower end of the capacitor C3, and the lower end of the resistor R1 is connected with the grid of the MOS transistor M35.
In the MOS transistor-based AC-DC conversion circuit, the negative half-cycle conversion circuit comprises MOS transistors M12-M22, MOS transistors M24, M27, M28, M30, M33, M34, M36, a capacitor C2, a capacitor C4 and a resistor R2. The related circuit connection structures of the MOS transistors M12 to M22 provide a compensation current and a fast discharge path for the gate of the MOS transistor M24, so that the MOS transistor M24 can be turned on and off fast, and the generation of reverse leakage current in the power supply voltage reverse process is further reduced obviously. The base ends of the MOS tubes M27 and M28 are respectively connected with the base end of the MOS tube M24. The related connection structure of the MOS transistor M27 and the MOS transistor M28 changes the substrate end voltage and the parasitic PN junction structure of the MOS transistor M24, so that a reverse leakage current path from the substrate of the MOS transistor M24 to the drain electrode is blocked, and the reverse leakage current in the power supply voltage reversing process is further reduced. The related connection structure of the MOS tubes M30 and M33 and the capacitor C2 reduces the on-resistance of the MOS tube M34 by adjusting the grid-source voltage of the MOS tube M34, further reduces the on-voltage drop of the MOS tube M34, and improves the conversion efficiency of the power supply. When the output voltage of the power supply VAC changes from a positive half cycle to a negative half cycle, the MOS transistor M30 provides a discharge path for the capacitor C2, and introduces the discharge current of the capacitor C2 into the output current path, and outputs the discharge current as an output current component through the port VO. The related circuit structures of the MOS transistor M36, the capacitor C4 and the resistor R2 can stabilize the system operation condition and ensure that the output voltage is stable and unchanged under the conditions of external interference and input and output current change.
In the negative half-cycle conversion circuit, the drain of the MOS transistor M13 is connected to the lower end of the power supply VAC, the gate of the MOS transistor M13 is connected to the gate of the MOS transistor M12, and the source of the MOS transistor M13 is connected to the drain of the MOS transistor M18. The source electrode of the MOS transistor M12 is connected with the source electrode of the MOS transistor M16, the gate electrode of the MOS transistor M12 is connected with the gate electrode of the MOS transistor M24, and the drain electrode of the MOS transistor M12 is grounded. The source of MOS pipe M18 is connected with the lower end of power VAC, the grid of MOS pipe M18 is connected with the grid of MOS pipe M19, and the drain of MOS pipe M18 is connected with the drain of MOS pipe M16. The source of MOS transistor M19 is connected to the lower end of power VAC, the gate of MOS transistor M19 is connected to the drain of MOS transistor M18, and the drain of MOS transistor M19 is connected to the drain of MOS transistor M17. The drain of MOS transistor M16 is connected to the source of MOS transistor M13, the gate of MOS transistor M16 is connected to the gate of MOS transistor M17, and the source of MOS transistor M16 is connected to the drain of MOS transistor M14. The drain of MOS transistor M17 is connected to the gate of MOS transistor M22, the gate of MOS transistor M17 is connected to the drain of MOS transistor M16, and the source of MOS transistor M17 is connected to the drain of MOS transistor M15. The drain of the MOS transistor M14 is connected with the source of the MOS transistor M12, the gate of the MOS transistor M14 is connected with the gate of the MOS transistor M15, and the source of the MOS transistor M14 is grounded. The drain of MOS transistor M15 is connected to the gate of MOS transistor M21, the gate of MOS transistor M15 is connected to the drain of MOS transistor M14, and the source of MOS transistor M15 is grounded. The source of MOS pipe M22 is connected with the lower end of power VAC, the grid of MOS pipe M22 is connected with the grid of MOS pipe M21, and the drain of MOS pipe M22 is connected with the drain of MOS pipe M21. The drain of MOS transistor M21 is connected to the gate of MOS transistor M24, the gate of MOS transistor M21 is connected to the gate of MOS transistor M20, and the source of MOS transistor M21 is connected to the drain of MOS transistor M20. The drain of MOS transistor M20 is connected to the gate of MOS transistor M24, the gate of MOS transistor M20 is connected to the drain of MOS transistor M15, and the source of MOS transistor M20 is grounded. The source of MOS transistor M24 is connected to the lower end of power VAC, the gate of MOS transistor M24 is connected to the drain of MOS transistor M21, the drain of MOS transistor M24 is grounded, and the substrate of MOS transistor M24 is connected to the substrate of MOS transistor M28. The drain of MOS pipe M28 is connected with the lower end of power VAC, the gate of MOS pipe M28 is connected with the drain of MOS pipe M27, the source of MOS pipe M28 is connected with the source of MOS pipe M27, and the substrate end of MOS pipe M28 is connected with the substrate end of MOS pipe M27. The source electrode of the MOS tube M27 is connected with the substrate end of the MOS tube M24, the gate electrode of the MOS tube M27 is connected with the drain electrode of the MOS tube M28, the drain electrode of the MOS tube M27 is grounded, and the substrate end of the MOS tube M27 is connected with the substrate end of the MOS tube M24. The drain of MOS transistor M30 is connected to the gate of MOS transistor M34, the gate of MOS transistor M30 is connected to the gate of MOS transistor M12, and the source of MOS transistor M30 is connected to the upper end of power VAC. The source of MOS pipe M34 is connected to the lower end of power VAC, the grid of MOS pipe M34 is connected to the grid of MOS pipe M33, and the drain of MOS pipe M34 is connected to port VO. The source of MOS transistor M33 is connected to the drain of MOS transistor M34, the gate of MOS transistor M33 is connected to the drain of MOS transistor M33, and the drain of MOS transistor M33 is connected to the gate of MOS transistor M36. The lower end of the capacitor C2 is connected with the drain electrode of the MOS tube M33, and the upper end of the capacitor C1 is grounded. The drain of MOS pipe M36 is connected with port VO, the gate of MOS pipe M36 is connected with the gate of MOS pipe M33, and the source of MOS pipe M36 is connected with the lower end of capacitor C4. The lower end of the resistor R2 is connected with the upper end of the capacitor C4, and the upper end of the resistor R2 is connected with the grid of the MOS transistor M36.
The invention provides an alternating current-direct current conversion circuit based on an MOS (metal oxide semiconductor) tube, which realizes the quick connection and disconnection of the MOS tube of a main switch by controlling and adjusting the grid electrode of the MOS tube of the main switch, thereby reducing the generation of reverse leakage current in the voltage reversing process of an alternating current power supply and improving the energy conversion efficiency and the system stability. By adjusting the grid-source voltage of the output control MOS tube, the conduction voltage drop of the related MOS tube is reduced, and the system power consumption is effectively reduced. The discharge current of the capacitor in the circuit is led into the output end and is output as an output current component, so that the energy conversion efficiency of the system is further improved.
Drawings
Fig. 1 is a circuit configuration diagram of the present invention.
Detailed Description
In order to facilitate an understanding of the invention, the invention is described in more detail below with reference to the accompanying drawings and specific examples. The preferred embodiments of the present invention are set forth in the specification and drawings, however, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It should be noted that when an element is fixed to another element, it includes fixing the element directly to the other element or fixing the element to the other element through at least one other element interposed therebetween. When an element is connected to another element, it includes directly connecting the element to the other element or connecting the element to the other element through at least one intervening other element.
As shown in fig. 1, the present invention includes a positive half cycle inverter circuit and a negative half cycle inverter circuit. The positive half-cycle conversion circuit comprises an alternating current power supply VAC, MOS transistors M1 to M11, MOS transistors M23, M25, M26, M29, M31, M32, M35, a capacitor C1, a capacitor C3, a resistor R1 and a port VO. The negative half-cycle conversion circuit comprises MOS transistors M12-M22, MOS transistors M24, M27, M28, M30, M33, M34 and M36, a capacitor C2, a capacitor C4 and a resistor R2. The peak value of the input voltage is 2.5V, the working frequency of the system is 32KHz, the output voltage is 2.3V, the ripple of the output voltage is 26mV, and the energy conversion efficiency is 89%. The capacitance value of the capacitor C1 is 3 muF, the capacitance value of the capacitor C2 is 3 muF, the capacitance value of the capacitor C3 is 2.7 muF, and the capacitance value of the capacitor C4 is 2.7 muF. The resistance value of the resistor R1 is 3K Ω, and the resistance value of the resistor R2 is 3K Ω.
As shown in fig. 1, the drain of the MOS transistor M1 is connected to the upper end of the power supply VAC, the gate of the MOS transistor M1 is connected to the gate of the MOS transistor M2, and the source of the MOS transistor M1 is connected to the drain of the MOS transistor M3. The source electrode of the MOS transistor M2 is connected with the source electrode of the MOS transistor M5, the gate electrode of the MOS transistor M2 is connected with the gate electrode of the MOS transistor M23, and the drain electrode of the MOS transistor M2 is grounded. The source of MOS pipe M3 is connected with the upper end of power VAC, the grid of MOS pipe M3 is connected with the grid of MOS pipe M4, and the drain of MOS pipe M3 is connected with the drain of MOS pipe M5. The source of MOS transistor M4 is connected to the upper end of power VAC, the gate of MOS transistor M4 is connected to the drain of MOS transistor M3, and the drain of MOS transistor M4 is connected to the drain of MOS transistor M6. The drain of MOS transistor M5 is connected to the source of MOS transistor M1, the gate of MOS transistor M5 is connected to the gate of MOS transistor M6, and the source of MOS transistor M5 is connected to the drain of MOS transistor M7. The drain of MOS transistor M6 is connected to the gate of MOS transistor M9, the gate of MOS transistor M6 is connected to the drain of MOS transistor M5, and the source of MOS transistor M6 is connected to the drain of MOS transistor M8. The drain of the MOS transistor M7 is connected with the source of the MOS transistor M2, the gate of the MOS transistor M7 is connected with the gate of the MOS transistor M8, and the source of the MOS transistor M7 is grounded. The drain of MOS transistor M8 is connected to the gate of MOS transistor M10, the gate of MOS transistor M8 is connected to the drain of MOS transistor M7, and the source of MOS transistor M8 is grounded. The source of MOS pipe M9 is connected with the upper end of power VAC, the grid of MOS pipe M9 is connected with the grid of MOS pipe M10, and the drain of MOS pipe M9 is connected with the drain of MOS pipe M10. The drain of MOS transistor M10 is connected to the gate of MOS transistor M23, the gate of MOS transistor M10 is connected to the gate of MOS transistor M11, and the source of MOS transistor M10 is connected to the drain of MOS transistor M11. The drain of MOS transistor M11 is connected to the gate of MOS transistor M23, the gate of MOS transistor M11 is connected to the drain of MOS transistor M8, and the source of MOS transistor M11 is grounded. The source of MOS transistor M23 is connected to the upper end of power VAC, the gate of MOS transistor M23 is connected to the drain of MOS transistor M10, the drain of MOS transistor M23 is grounded, and the substrate of MOS transistor M23 is connected to the substrate of MOS transistor M25. The drain electrode of the MOS tube M25 is connected with the upper end of a power supply VAC, the gate electrode of the MOS tube M25 is connected with the drain electrode of the MOS tube M26, the source electrode of the MOS tube M25 is connected with the source electrode of the MOS tube M26, and the substrate end of the MOS tube M25 is connected with the substrate end of the MOS tube M26. The source electrode of the MOS tube M26 is connected with the substrate end of the MOS tube M23, the gate electrode of the MOS tube M26 is connected with the drain electrode of the MOS tube M25, the drain electrode of the MOS tube M26 is grounded, and the substrate end of the MOS tube M26 is connected with the substrate end of the MOS tube M23. The drain of MOS pipe M29 is connected with the gate of MOS pipe M31, the gate of MOS pipe M29 is connected with the gate of MOS pipe M2, and the source of MOS pipe M29 is connected with the lower end of power VAC. The source of MOS pipe M31 is connected with the upper end of power VAC, the grid of MOS pipe M31 is connected with the grid of MOS pipe M32, and the drain of MOS pipe M31 is connected with port VO. The source of MOS transistor M32 is connected to the drain of MOS transistor M31, the gate of MOS transistor M32 is connected to the drain of MOS transistor M32, and the drain of MOS transistor M32 is connected to the gate of MOS transistor M35. The upper end of the capacitor C1 is connected with the drain electrode of the MOS tube M32, and the lower end of the capacitor C1 is grounded. The drain of the MOS transistor M35 is connected to the port VO, the gate of the MOS transistor M35 is connected to the gate of the MOS transistor M32, and the source of the MOS transistor M35 is connected to the upper end of the capacitor C3. The upper end of the resistor R1 is connected with the lower end of the capacitor C3, and the lower end of the resistor R1 is connected with the grid of the MOS transistor M35.
As shown in fig. 1, the drain of the MOS transistor M13 is connected to the lower end of the power supply VAC, the gate of the MOS transistor M13 is connected to the gate of the MOS transistor M12, and the source of the MOS transistor M13 is connected to the drain of the MOS transistor M18. The source electrode of the MOS transistor M12 is connected with the source electrode of the MOS transistor M16, the gate electrode of the MOS transistor M12 is connected with the gate electrode of the MOS transistor M24, and the drain electrode of the MOS transistor M12 is grounded. The source of MOS pipe M18 is connected with the lower end of power VAC, the grid of MOS pipe M18 is connected with the grid of MOS pipe M19, and the drain of MOS pipe M18 is connected with the drain of MOS pipe M16. The source of MOS transistor M19 is connected to the lower end of power VAC, the gate of MOS transistor M19 is connected to the drain of MOS transistor M18, and the drain of MOS transistor M19 is connected to the drain of MOS transistor M17. The drain of MOS transistor M16 is connected to the source of MOS transistor M13, the gate of MOS transistor M16 is connected to the gate of MOS transistor M17, and the source of MOS transistor M16 is connected to the drain of MOS transistor M14. The drain of MOS transistor M17 is connected to the gate of MOS transistor M22, the gate of MOS transistor M17 is connected to the drain of MOS transistor M16, and the source of MOS transistor M17 is connected to the drain of MOS transistor M15. The drain of the MOS transistor M14 is connected with the source of the MOS transistor M12, the gate of the MOS transistor M14 is connected with the gate of the MOS transistor M15, and the source of the MOS transistor M14 is grounded. The drain of MOS transistor M15 is connected to the gate of MOS transistor M21, the gate of MOS transistor M15 is connected to the drain of MOS transistor M14, and the source of MOS transistor M15 is grounded. The source of MOS pipe M22 is connected with the lower end of power VAC, the grid of MOS pipe M22 is connected with the grid of MOS pipe M21, and the drain of MOS pipe M22 is connected with the drain of MOS pipe M21. The drain of MOS transistor M21 is connected to the gate of MOS transistor M24, the gate of MOS transistor M21 is connected to the gate of MOS transistor M20, and the source of MOS transistor M21 is connected to the drain of MOS transistor M20. The drain of MOS transistor M20 is connected to the gate of MOS transistor M24, the gate of MOS transistor M20 is connected to the drain of MOS transistor M15, and the source of MOS transistor M20 is grounded. The source of MOS transistor M24 is connected to the lower end of power VAC, the gate of MOS transistor M24 is connected to the drain of MOS transistor M21, the drain of MOS transistor M24 is grounded, and the substrate of MOS transistor M24 is connected to the substrate of MOS transistor M28. The drain of MOS pipe M28 is connected with the lower end of power VAC, the gate of MOS pipe M28 is connected with the drain of MOS pipe M27, the source of MOS pipe M28 is connected with the source of MOS pipe M27, and the substrate end of MOS pipe M28 is connected with the substrate end of MOS pipe M27. The source electrode of the MOS tube M27 is connected with the substrate end of the MOS tube M24, the gate electrode of the MOS tube M27 is connected with the drain electrode of the MOS tube M28, the drain electrode of the MOS tube M27 is grounded, and the substrate end of the MOS tube M27 is connected with the substrate end of the MOS tube M24. The drain of MOS transistor M30 is connected to the gate of MOS transistor M34, the gate of MOS transistor M30 is connected to the gate of MOS transistor M12, and the source of MOS transistor M30 is connected to the upper end of power VAC. The source of MOS pipe M34 is connected to the lower end of power VAC, the grid of MOS pipe M34 is connected to the grid of MOS pipe M33, and the drain of MOS pipe M34 is connected to port VO. The source of MOS transistor M33 is connected to the drain of MOS transistor M34, the gate of MOS transistor M33 is connected to the drain of MOS transistor M33, and the drain of MOS transistor M33 is connected to the gate of MOS transistor M36. The lower end of the capacitor C2 is connected with the drain electrode of the MOS tube M33, and the upper end of the capacitor C1 is grounded. The drain of MOS pipe M36 is connected with port VO, the gate of MOS pipe M36 is connected with the gate of MOS pipe M33, and the source of MOS pipe M36 is connected with the lower end of capacitor C4. The lower end of the resistor R2 is connected with the upper end of the capacitor C4, and the upper end of the resistor R2 is connected with the grid of the MOS transistor M36.
The technical features mentioned above are combined with each other to form various embodiments which are not listed above, and all of them are regarded as the scope of the present invention described in the specification; also, modifications and variations may be suggested to those skilled in the art in light of the above teachings, and it is intended to cover all such modifications and variations as fall within the true spirit and scope of the invention as defined by the appended claims.
Claims (1)
1. An alternating current-direct current conversion circuit based on an MOS (metal oxide semiconductor) tube is characterized by comprising a positive half-cycle conversion circuit and a negative half-cycle conversion circuit;
when the output voltage of the alternating current power supply VAC is in a positive half period, the positive half period conversion circuit works;
when the output voltage of the alternating current power supply VAC is in a negative half cycle, the negative half cycle conversion circuit works;
the positive half-cycle conversion circuit comprises an alternating current power supply VAC, MOS transistors M1 to M11, MOS transistors M23, M25, M26, M29, M31, M32, M35, a capacitor C1, a capacitor C3, a resistor R1 and a port VO;
the negative half-cycle conversion circuit comprises MOS transistors M12-M22, MOS transistors M24, M27, M28, M30, M33, M34, M36, a capacitor C2, a capacitor C4 and a resistor R2;
the drain electrode of the MOS tube M1 is connected with the upper end of a power supply VAC, the gate electrode of the MOS tube M1 is connected with the gate electrode of the MOS tube M2, and the source electrode of the MOS tube M1 is connected with the drain electrode of the MOS tube M3; the source electrode of the MOS transistor M2 is connected with the source electrode of the MOS transistor M5, the gate electrode of the MOS transistor M2 is connected with the gate electrode of the MOS transistor M23, and the drain electrode of the MOS transistor M2 is grounded; the source electrode of the MOS tube M3 is connected with the upper end of a power supply VAC, the grid electrode of the MOS tube M3 is connected with the grid electrode of the MOS tube M4, and the drain electrode of the MOS tube M3 is connected with the drain electrode of the MOS tube M5; the source electrode of the MOS tube M4 is connected with the upper end of a power supply VAC, the grid electrode of the MOS tube M4 is connected with the drain electrode of the MOS tube M3, and the drain electrode of the MOS tube M4 is connected with the drain electrode of the MOS tube M6; the drain electrode of the MOS transistor M5 is connected with the source electrode of the MOS transistor M1, the gate electrode of the MOS transistor M5 is connected with the gate electrode of the MOS transistor M6, and the source electrode of the MOS transistor M5 is connected with the drain electrode of the MOS transistor M7; the drain electrode of the MOS tube M6 is connected with the gate electrode of the MOS tube M9, the gate electrode of the MOS tube M6 is connected with the drain electrode of the MOS tube M5, and the source electrode of the MOS tube M6 is connected with the drain electrode of the MOS tube M8; the drain electrode of the MOS transistor M7 is connected with the source electrode of the MOS transistor M2, the gate electrode of the MOS transistor M7 is connected with the gate electrode of the MOS transistor M8, and the source electrode of the MOS transistor M7 is grounded; the drain electrode of the MOS tube M8 is connected with the gate electrode of the MOS tube M10, the gate electrode of the MOS tube M8 is connected with the drain electrode of the MOS tube M7, and the source electrode of the MOS tube M8 is grounded; the source electrode of the MOS tube M9 is connected with the upper end of a power supply VAC, the grid electrode of the MOS tube M9 is connected with the grid electrode of the MOS tube M10, and the drain electrode of the MOS tube M9 is connected with the drain electrode of the MOS tube M10; the drain electrode of the MOS transistor M10 is connected with the gate electrode of the MOS transistor M23, the gate electrode of the MOS transistor M10 is connected with the gate electrode of the MOS transistor M11, and the source electrode of the MOS transistor M10 is connected with the drain electrode of the MOS transistor M11; the drain electrode of the MOS tube M11 is connected with the gate electrode of the MOS tube M23, the gate electrode of the MOS tube M11 is connected with the drain electrode of the MOS tube M8, and the source electrode of the MOS tube M11 is grounded; the source electrode of the MOS tube M23 is connected with the upper end of a power supply VAC, the grid electrode of the MOS tube M23 is connected with the drain electrode of the MOS tube M10, the drain electrode of the MOS tube M23 is grounded, and the substrate end of the MOS tube M23 is connected with the substrate end of the MOS tube M25; the drain electrode of the MOS tube M25 is connected with the upper end of a power supply VAC, the gate electrode of the MOS tube M25 is connected with the drain electrode of the MOS tube M26, the source electrode of the MOS tube M25 is connected with the source electrode of the MOS tube M26, and the substrate end of the MOS tube M25 is connected with the substrate end of the MOS tube M26; the source electrode of the MOS tube M26 is connected with the substrate end of the MOS tube M23, the grid electrode of the MOS tube M26 is connected with the drain electrode of the MOS tube M25, the drain electrode of the MOS tube M26 is grounded, and the substrate end of the MOS tube M26 is connected with the substrate end of the MOS tube M23; the drain electrode of the MOS tube M29 is connected with the gate electrode of the MOS tube M31, the gate electrode of the MOS tube M29 is connected with the gate electrode of the MOS tube M2, and the source electrode of the MOS tube M29 is connected with the lower end of a power supply VAC; the source electrode of the MOS tube M31 is connected with the upper end of a power supply VAC, the grid electrode of the MOS tube M31 is connected with the grid electrode of the MOS tube M32, and the drain electrode of the MOS tube M31 is connected with a port VO; the source electrode of the MOS transistor M32 is connected with the drain electrode of the MOS transistor M31, the gate electrode of the MOS transistor M32 is connected with the drain electrode of the MOS transistor M32, and the drain electrode of the MOS transistor M32 is connected with the gate electrode of the MOS transistor M35; the upper end of the capacitor C1 is connected with the drain electrode of the MOS tube M32, and the lower end of the capacitor C1 is grounded; the drain electrode of the MOS tube M35 is connected with the port VO, the grid electrode of the MOS tube M35 is connected with the grid electrode of the MOS tube M32, and the source electrode of the MOS tube M35 is connected with the upper end of the capacitor C3; the upper end of the resistor R1 is connected with the lower end of the capacitor C3, and the lower end of the resistor R1 is connected with the grid of the MOS transistor M35;
the drain electrode of the MOS tube M13 is connected with the lower end of a power supply VAC, the gate electrode of the MOS tube M13 is connected with the gate electrode of the MOS tube M12, and the source electrode of the MOS tube M13 is connected with the drain electrode of the MOS tube M18; the source electrode of the MOS transistor M12 is connected with the source electrode of the MOS transistor M16, the gate electrode of the MOS transistor M12 is connected with the gate electrode of the MOS transistor M24, and the drain electrode of the MOS transistor M12 is grounded; the source electrode of the MOS tube M18 is connected with the lower end of a power supply VAC, the grid electrode of the MOS tube M18 is connected with the grid electrode of the MOS tube M19, and the drain electrode of the MOS tube M18 is connected with the drain electrode of the MOS tube M16; the source electrode of the MOS tube M19 is connected with the lower end of a power supply VAC, the grid electrode of the MOS tube M19 is connected with the drain electrode of the MOS tube M18, and the drain electrode of the MOS tube M19 is connected with the drain electrode of the MOS tube M17; the drain electrode of the MOS transistor M16 is connected with the source electrode of the MOS transistor M13, the gate electrode of the MOS transistor M16 is connected with the gate electrode of the MOS transistor M17, and the source electrode of the MOS transistor M16 is connected with the drain electrode of the MOS transistor M14; the drain electrode of the MOS tube M17 is connected with the gate electrode of the MOS tube M22, the gate electrode of the MOS tube M17 is connected with the drain electrode of the MOS tube M16, and the source electrode of the MOS tube M17 is connected with the drain electrode of the MOS tube M15; the drain electrode of the MOS transistor M14 is connected with the source electrode of the MOS transistor M12, the gate electrode of the MOS transistor M14 is connected with the gate electrode of the MOS transistor M15, and the source electrode of the MOS transistor M14 is grounded; the drain electrode of the MOS tube M15 is connected with the gate electrode of the MOS tube M21, the gate electrode of the MOS tube M15 is connected with the drain electrode of the MOS tube M14, and the source electrode of the MOS tube M15 is grounded; the source electrode of the MOS tube M22 is connected with the lower end of a power supply VAC, the grid electrode of the MOS tube M22 is connected with the grid electrode of the MOS tube M21, and the drain electrode of the MOS tube M22 is connected with the drain electrode of the MOS tube M21; the drain electrode of the MOS transistor M21 is connected with the gate electrode of the MOS transistor M24, the gate electrode of the MOS transistor M21 is connected with the gate electrode of the MOS transistor M20, and the source electrode of the MOS transistor M21 is connected with the drain electrode of the MOS transistor M20; the drain electrode of the MOS tube M20 is connected with the gate electrode of the MOS tube M24, the gate electrode of the MOS tube M20 is connected with the drain electrode of the MOS tube M15, and the source electrode of the MOS tube M20 is grounded; the source electrode of the MOS tube M24 is connected with the lower end of a power supply VAC, the grid electrode of the MOS tube M24 is connected with the drain electrode of the MOS tube M21, the drain electrode of the MOS tube M24 is grounded, and the substrate end of the MOS tube M24 is connected with the substrate end of the MOS tube M28; the drain electrode of the MOS tube M28 is connected with the lower end of a power supply VAC, the gate electrode of the MOS tube M28 is connected with the drain electrode of the MOS tube M27, the source electrode of the MOS tube M28 is connected with the source electrode of the MOS tube M27, and the substrate end of the MOS tube M28 is connected with the substrate end of the MOS tube M27; the source electrode of the MOS tube M27 is connected with the substrate end of the MOS tube M24, the grid electrode of the MOS tube M27 is connected with the drain electrode of the MOS tube M28, the drain electrode of the MOS tube M27 is grounded, and the substrate end of the MOS tube M27 is connected with the substrate end of the MOS tube M24; the drain electrode of the MOS tube M30 is connected with the gate electrode of the MOS tube M34, the gate electrode of the MOS tube M30 is connected with the gate electrode of the MOS tube M12, and the source electrode of the MOS tube M30 is connected with the upper end of a power supply VAC; the source electrode of the MOS tube M34 is connected with the lower end of a power supply VAC, the grid electrode of the MOS tube M34 is connected with the grid electrode of the MOS tube M33, and the drain electrode of the MOS tube M34 is connected with a port VO; the source electrode of the MOS transistor M33 is connected with the drain electrode of the MOS transistor M34, the gate electrode of the MOS transistor M33 is connected with the drain electrode of the MOS transistor M33, and the drain electrode of the MOS transistor M33 is connected with the gate electrode of the MOS transistor M36; the lower end of the capacitor C2 is connected with the drain electrode of the MOS tube M33, and the upper end of the capacitor C2 is grounded; the drain electrode of the MOS tube M36 is connected with a port VO, the gate electrode of the MOS tube M36 is connected with the gate electrode of the MOS tube M33, and the source electrode of the MOS tube M36 is connected with the lower end of the capacitor C4; the lower end of the resistor R2 is connected with the upper end of the capacitor C4, and the upper end of the resistor R2 is connected with the grid of the MOS transistor M36.
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| CN108696157A (en) * | 2017-03-30 | 2018-10-23 | 拉碧斯半导体株式会社 | Rectification circuit |
| CN110401363A (en) * | 2019-07-15 | 2019-11-01 | 电子科技大学 | A kind of CMOS full-wave rectifying circuit |
| US10707773B2 (en) * | 2017-11-20 | 2020-07-07 | National Cheng Kung Univsersity | Energy acquisition and power supply system |
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| CN106527559A (en) * | 2016-12-28 | 2017-03-22 | 桂林电子科技大学 | Low-voltage nanowatt-scale full CMOS current mode reference voltage source |
| CN108696157A (en) * | 2017-03-30 | 2018-10-23 | 拉碧斯半导体株式会社 | Rectification circuit |
| US10707773B2 (en) * | 2017-11-20 | 2020-07-07 | National Cheng Kung Univsersity | Energy acquisition and power supply system |
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