CN111554793B - Combined type full-flexible power generation unit body and human body wearable electronic equipment - Google Patents
Combined type full-flexible power generation unit body and human body wearable electronic equipment Download PDFInfo
- Publication number
- CN111554793B CN111554793B CN202010209825.XA CN202010209825A CN111554793B CN 111554793 B CN111554793 B CN 111554793B CN 202010209825 A CN202010209825 A CN 202010209825A CN 111554793 B CN111554793 B CN 111554793B
- Authority
- CN
- China
- Prior art keywords
- type semiconductor
- film
- power generation
- semiconductor film
- flexible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
- H02N11/002—Generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The embodiment of the invention provides a combined type full-flexible power generation unit body and a human body wearable electronic device. Meanwhile, the combined type full-flexible power generation unit body is simple in structure, convenient to manufacture and suitable for industrial production.
Description
Technical Field
The invention relates to the technical field of semiconductor film preparation and the technical field of new energy development, in particular to a combined type full-flexible power generation unit body and a human body wearable electronic device.
Background
In recent years, with the large-scale use of traditional fuels such as coal, oil, and natural gas in industrial production and life, the storage amount of such non-renewable energy sources is reduced year by year and is used up in the end, and human beings face an unprecedented energy crisis. Meanwhile, some renewable energy sources such as solar energy, wind energy, water energy, nuclear energy and other clean energy sources are emerging and gradually replace the traditional energy sources, and people also pay more attention to and favor the development and utilization of the clean energy sources. As is well known, the efficiency of energy utilization is extremely low, with over seventy percent of the energy being discharged to the atmosphere as heat. Therefore, a thermoelectric power generation technology taking thermoelectric materials as main bodies is being developed and rapidly developed, and practice proves that the technology utilizing waste heat has the characteristics of stable performance, capability of working under severe conditions for a long time, less maintenance times, no noise, environmental friendliness and the like, more and more people begin to pay attention to and promote the research work of the thermoelectric power generation technology, but the current technology still has the problems of low efficiency and the like, and cannot be applied to engineering practice.
Among the thermoelectric power generation materials, Bi2Te3The thermoelectric material taking the semiconductor material as the leading material is concerned by more researchers due to the higher ZT value, and has more research significance and potential commercial value. Based on Bi2Te3The semiconductor film preparation technology is a series of researches on film preparation technology, and the existing Bi2Te3The preparation technique of the semiconductor film is to use one-dimensional carbon nano tube to induce Bi2Te3While the inter-tube grooves of the carbon nanotube bundle can limit the diffusion of Bi and Te atoms, and the combination of the Bi and Te atoms2Te3The ordered growth of the crystal structure prepares a flexible composite thermoelectric film, but the technical difficulty and the cost are still too high at present, so that the flexible composite thermoelectric film cannot be produced and applied in engineering in practice; on the other hand, many kinds of thermoelectric structures for different purposes have been proposed in recent years, but because of low thermoelectric efficiency and thermoelectric figure of merit, thermoelectric has not been widely used in practical production and life, and a single energy source also limits the popularization and use of thermoelectric structures.
Therefore, the thermoelectric efficiency and thermoelectric figure of merit of the existing thermoelectric structure are low, and the preparation process is complex.
Disclosure of Invention
The embodiment of the invention provides a combined type full-flexible power generation unit body and a human body wearable electronic device, which are used for solving the problems of low thermoelectric efficiency and thermoelectric figure of merit and complex preparation process of the conventional thermoelectric structure.
In view of the above technical problems, in a first aspect, an embodiment of the present invention provides a combined type fully flexible power generation unit body, including a flexible BaTiO3Triboelectric power generating film, liquid metal electrode, and arrangementIn the flexible BaTiO3A P-type semiconductor film and an N-type semiconductor film on two side surfaces of the friction power generation film;
each P-type semiconductor film and each N-type semiconductor film are rectangular films with the same length, width and thickness;
in the flexible BaTiO3Each side surface of the friction power generation thin film is provided with a plurality of P-type semiconductor thin films and N-type semiconductor thin films which are arranged at equal intervals and are parallel to each other, the N-type semiconductor thin film is adjacent to each P-type semiconductor thin film, and the P-type semiconductor thin film is adjacent to each N-type semiconductor thin film;
the liquid metal electrode is used for connecting the P-type semiconductor film and the N-type semiconductor film so as to form the flexible BaTiO3Thermoelectric layers are formed on two side surfaces of the friction power generation film.
Optionally, the method further comprises:
to the flexible BaTiO3Dividing each P-type semiconductor thin film and each N-type semiconductor thin film into semiconductor thin film groups by each side surface of the friction power generation thin film, wherein each semiconductor thin film group comprises one P-type semiconductor thin film and one N-type semiconductor thin film which are adjacent, and the P-type semiconductor thin film and the N-type semiconductor thin film in each semiconductor thin film group are connected through liquid metal electrodes at one end in the length direction of each P-type semiconductor thin film and each N-type semiconductor thin film to form a pi-type structure semiconductor pair;
and connecting adjacent N-type structure semiconductor pairs through liquid metal electrodes at the other ends of the P-type semiconductor films and the N-type semiconductor films in the length direction, wherein for the adjacent N-type structure semiconductor pairs, the liquid metal electrodes are closest to the connecting positions and are respectively positioned on the P-type semiconductor film and the N-type semiconductor film in different N-type structure semiconductor pairs.
Optionally, a first group of output terminals and a second group of output terminals are further included;
the first set of outputs includes a coupling for coupling the flexible BaTiO3The output end outputs potential difference generated by each P-type semiconductor film and each N-type semiconductor film on each side surface of the friction power generation film under the condition of temperature difference;
the second set of outputs includes a second set of outputs for coupling the flexible BaTiO to a substrate3The friction power generation film is used as an intermediate layer, and the output end outputs the surface potential difference on two sides generated by deformation, extrusion and friction.
Alternatively, each of the P-type semiconductor thin films and each of the N-type semiconductor thin films are each made of Bi2Te3And forming a semiconductor film.
Alternatively, the Bi2Te3The preparation process of the semiconductor film comprises the following steps:
step S11: weighing 5gBi2Te3Dissolving semiconductor powder and 0.375g of cellulose in 5g of deionized water, adding 12g of surfactant, placing in an ultrasonic crusher, and performing ultrasonic treatment until the dispersion is complete;
step S12: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform Bi is obtained2Te3A semiconductor thin film;
step S13: the obtained Bi2Te3The semiconductor film is maintained in a tube furnace under nitrogen atmosphere [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
Optionally, the surfactant is a 3.33% aqueous PVA solution;
the preparation method of the surfactant comprises the following steps:
weighing 10g of PVA powder, and dissolving in 300mL of deionized water;
stirring for about 2 hours at 100 ℃ under the condition of 2000 revolutions of mechanical stirring to fully dissolve PVA powder in water, and standing for 10, 12 hours.
Alternatively, the Bi2Te3The purity of the semiconductor powder is 99.99 percent, and the Bi is2Te3The particle size of the semiconductor powder is 2500 meshes;
the cellulose is sulfonated cotton cellulose, the diameter of the cellulose is [4, 10] nanometer, and the length of the cellulose is [100, 500] nanometer.
Optionally, the step S3 specifically includes:
the obtained Bi2Te3The semiconductor film is placed in a tube furnace in a nitrogen environment and is maintained under a preset pressure and a preset clamping force [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
Optionally, the flexible BaTiO3The preparation process of the friction power generation film comprises the following steps:
step S21: 5g of BaTiO are weighed3Dissolving semiconductor powder and 0.375g of cellulose in 5g of deionized water, adding 12g of surfactant, placing in an ultrasonic crusher, and performing ultrasonic treatment until the dispersion is complete;
step S22: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform BaTiO is obtained3Semiconductor thin film as the flexible BaTiO3A triboelectric power generating film.
In a second aspect, the invention provides a wearable electronic device for a human body, which comprises the above-mentioned combined type fully flexible power generation unit body.
The embodiment of the invention provides a combined type full-flexible power generation unit body and a human body wearable electronic device. Meanwhile, the combined type full-flexible power generation unit body is simple in structure, convenient to manufacture and suitable for industrial production.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a combined type fully flexible power generation unit body provided by an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a schematic structural diagram of a combined type fully flexible power generation unit body provided in this embodiment, and referring to fig. 1, the combined type fully flexible power generation unit body includes flexible BaTiO3A friction power generation film (1), a liquid metal electrode (4) and a flexible BaTiO arranged on the flexible BaTiO3A P-type semiconductor film (2) and an N-type semiconductor film (3) which rub two side faces of the power generation film;
each P-type semiconductor film (2) and each N-type semiconductor film (3) are rectangular films with the same length, width and thickness;
in the flexible BaTiO3Each side surface of the friction power generation thin film (1), each P-type semiconductor thin film (2) and each N-type semiconductor thin film (3) are arranged at equal intervals and are parallel to each other, the N-type semiconductor thin film (3) is adjacent to each P-type semiconductor thin film (2), and the P-type semiconductor thin film (2) is adjacent to each N-type semiconductor thin film (3);
the liquid metal electrode (4) is used for connecting the P-type semiconductor film (2) and the N-type semiconductor film (3) so as to form the flexible BaTiO3Thermoelectric layers are formed on two side surfaces of the friction power generation film (1).
The liquid metal electrode can realize fault self-repair at normal temperature, and the heat end energy temporary storage is realized by utilizing the latent heat of phase change characteristic of the liquid metal.
The combined type fully-flexible power generation unit body is integrally packaged by flexible materials such as PDMS or Ecoflex 00-30, and the fully-flexible function of the unit body is realized, so that the combined type fully-flexible power generation unit body has popularization and application values in the fields of wearable electronics and the like.
The embodiment provides a combined type fully flexible power generation unit body, which integrates the principles and applicable conditions of thermoelectric power generation and friction power generation, generates power through energy generated by multiple channels, and improves thermoelectric efficiency and thermoelectric figure of merit. Meanwhile, the combined type full-flexible power generation unit body is simple in structure, convenient to manufacture and suitable for industrial production.
Further, on the basis of the above embodiments, referring to fig. 1, the method further includes:
to the flexible BaTiO3Dividing each P-type semiconductor thin film and each N-type semiconductor thin film into semiconductor thin film groups by each side surface of the friction power generation thin film, wherein each semiconductor thin film group comprises one P-type semiconductor thin film and one N-type semiconductor thin film which are adjacent, and the P-type semiconductor thin film and the N-type semiconductor thin film in each semiconductor thin film group are connected through liquid metal electrodes at one end in the length direction of each P-type semiconductor thin film and each N-type semiconductor thin film to form a pi-type structure semiconductor pair;
and connecting adjacent N-type structure semiconductor pairs through liquid metal electrodes at the other ends of the P-type semiconductor films and the N-type semiconductor films in the length direction, wherein for the adjacent N-type structure semiconductor pairs, the liquid metal electrodes are closest to the connecting positions and are respectively positioned on the P-type semiconductor film and the N-type semiconductor film in different N-type structure semiconductor pairs.
Further, on the basis of the above embodiments, referring to fig. 1, a first group of output terminals and a second group of output terminals are further included;
the first set of outputs includes a coupling for coupling the flexible BaTiO3Output ends (a) and (b) for outputting potential difference generated by each P-type semiconductor film and each N-type semiconductor film on each side of the friction power generation film under the condition of temperature difference;
the second set of outputs includes a second set of outputs for coupling the flexible BaTiO to a substrate3And the friction power generation film is used as an intermediate layer, and the output ends (c) and (d) output the potential difference of the two side surfaces generated by deformation, extrusion and friction.
In particular, in flexible BaTiO3The two sides of the friction power generation film are respectively fixed with the same interval, the size and the thicknessThe flexible BaTiO semiconductor thin film structure comprises rectangular P-type semiconductor thin films and N-type semiconductor thin films which are the same in shape, wherein the P-type semiconductor thin films and the N-type semiconductor thin films are arranged at intervals and are mutually parallel, one end of each pair of semiconductor thin films is connected through a liquid metal electrode, the other end of each N-type semiconductor thin film is connected with the other end of the adjacent group of P-type semiconductor thin films through a liquid metal electrode, N-type structure semiconductor pairs are sequentially connected in the same mode, and flexible BaTiO semiconductor pairs are arranged on the flexible BaTiO semiconductor thin films3And S-shaped thermoelectric layers are formed on the front and back surfaces of the friction power generation film.
Two groups of flexible Bi2Te3The potential difference generated by the semiconductor thin film layer under the condition of temperature difference is used as a first energy source, and the output end is provided with (a) and (b) ports; flexible BaTiO3The friction power generation film is a middle layer, the friction power generation film is deformed and extruded, the potential difference of the two side surfaces generated by friction is used as a second energy source, and the output ends are (c) and (d).
In the embodiment, the electric energy of the combined type fully-flexible power generation unit body is output through the first group of output ends and the second group of output ends, and a foundation is laid for the application of the combined type fully-flexible power generation unit body.
Further, on the basis of the above embodiments, the Bi2Te3The preparation process of the semiconductor film comprises the following steps:
step S11: weighing 5gBi2Te3Dissolving semiconductor powder and 0.375g of cellulose in 5g of deionized water, adding 12g of surfactant, placing in an ultrasonic crusher, and performing ultrasonic treatment until the dispersion is complete;
step S12: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform Bi is obtained2Te3A semiconductor thin film;
step S13: the obtained Bi2Te3The semiconductor film is maintained in a tube furnace under nitrogen atmosphere [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
The standing time is 12 to 16 hours, which is to sufficiently dry the semiconductor film, and the semiconductor film is severely curled if the standing time is too long.
In this example, Bi is prepared by chemical deposition and low-temperature sintering at low cost and large area2Te3The semiconductor film has simple process, high speed and high efficiency and low production cost, and is expected to be applied to industrial production in a large range.
Further, in each of the above examples, the surfactant was a 3.33% PVA aqueous solution;
the preparation method of the surfactant comprises the following steps:
weighing 10g of PVA powder, and dissolving in 300mL of deionized water;
stirring for about 2 hours at 100 ℃ under the condition of 2000 revolutions of mechanical stirring to fully dissolve PVA powder in water, and standing for 10, 12 hours.
This example realizes the preparation of the surfactant.
Further, on the basis of the above embodiments, the Bi2Te3The purity of the semiconductor powder is 99.99 percent, and the Bi is2Te3The particle size of the semiconductor powder is 2500 meshes;
the cellulose is sulfonated cotton cellulose, the diameter of the cellulose is [4, 10] nanometer, and the length of the cellulose is [100, 500] nanometer.
Wherein, said Bi2Te3The semiconductor powder had a particle size of 2500 mesh, i.e., a particle diameter of 5 μm
Further, on the basis of the foregoing embodiments, the step S3 specifically includes:
the obtained Bi2Te3The semiconductor film is placed in a tube furnace in a nitrogen environment and is maintained under a preset pressure and a preset clamping force [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
Among them, the PVC hard plastic plate needs to be placed on a flat surface and in a sufficiently fixed state.
Wherein, the heating is maintained at the temperature of 200, 300 ℃ for 2h under the preset pressure and the preset clamping force, so as to prevent the phenomena of curling, breaking and the like after the heating from influencing the preparation of the film.
This example realizes the control of Bi2Te3And preparing the semiconductor film. Prepared Bi2Te3The semiconductor film can be applied as a flexible thermoelectric power generation material.
Further, on the basis of the above embodiments, the flexible BaTiO3The preparation process of the friction power generation film comprises the following steps:
step S21: 5g of BaTiO are weighed3Dissolving semiconductor powder and 0.375g of cellulose in 5g of deionized water, adding 12g of surfactant, placing in an ultrasonic crusher, and performing ultrasonic treatment until the dispersion is complete;
step S22: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform BaTiO is obtained3Semiconductor thin film as the flexible BaTiO3A triboelectric power generating film.
In particular, the flexible BaTiO3The friction power generation film material is BaTiO3The powder is prepared in a similar manner to the semiconductor thin film preparation method and does not need to be subjected to the heat treatment in the above step S13.
This example realizes the control of BaTiO3And (3) preparing a friction power generation film.
In addition, the present embodiment provides a wearable electronic device for a human body, which includes the combined type fully flexible power generation unit body according to any of the above embodiments.
The embodiment provides wearable electronic equipment for a human body, wherein the principle and the applicable conditions of thermoelectric power generation and frictional power generation are synthesized by the combined type fully-flexible power generation unit body, power generation is carried out through energy generated by multiple channels, and the thermoelectric efficiency and the thermoelectric figure of merit are improved. Meanwhile, the combined type full-flexible power generation unit body is simple in structure, convenient to manufacture and suitable for industrial production.
In conclusion, the combined type full-flexible power generation unit body and the wearable electronic equipment for the human body provided by the embodiment can comprehensively utilize the body temperature and various motion functions of the human body in the aspect of wearable electronics, and realize multi-energy utilization and collection. In addition, the method for preparing the large noodles with simple process, high speed, high efficiency and low cost is providedProduct of Bi2Te3The invention effectively solves the defects of high cost, difficult technology and incapability of forming a large-area semiconductor film in the conventional semiconductor film preparation process, and the prepared Bi2Te3The semiconductor film is uniform and flat and has higher thermoelectric effect.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. The combined type full-flexible power generation unit body is characterized by comprising flexible BaTiO3A friction power generation film, a liquid metal electrode, and a flexible BaTiO3A P-type semiconductor film and an N-type semiconductor film on two side surfaces of the friction power generation film;
each P-type semiconductor film and each N-type semiconductor film are rectangular films with the same length, width and thickness;
in the flexible BaTiO3Each side surface of the friction power generation thin film is provided with a plurality of P-type semiconductor thin films and N-type semiconductor thin films which are arranged at equal intervals and are parallel to each other, the N-type semiconductor thin film is adjacent to each P-type semiconductor thin film, and the P-type semiconductor thin film is adjacent to each N-type semiconductor thin film;
the liquid metal electrode is used for connecting the P-type semiconductor film and the N-type semiconductor film so as to form the flexible BaTiO3Forming thermoelectric layers on two side surfaces of the friction power generation film; wherein the content of the first and second substances,
to the flexible BaTiO3Each P-type semiconductor film is arranged on each side surface of the friction power generation filmEach N-type semiconductor film is divided into semiconductor film groups, each semiconductor film group comprises a P-type semiconductor film and an N-type semiconductor film which are adjacent, and the P-type semiconductor film and the N-type semiconductor film in each semiconductor film group are connected through liquid metal electrodes at one end of each P-type semiconductor film and each N-type semiconductor film in the length direction to form pi-type structure semiconductor pairs;
and connecting adjacent N-type structure semiconductor pairs through liquid metal electrodes at the other ends of the P-type semiconductor films and the N-type semiconductor films in the length direction, wherein for the adjacent N-type structure semiconductor pairs, the liquid metal electrodes are closest to the connecting positions and are respectively positioned on the P-type semiconductor film and the N-type semiconductor film in different N-type structure semiconductor pairs.
2. The hybrid fully flexible power generating unit body of claim 1, further comprising a first set of output terminals and a second set of output terminals;
the first set of outputs includes a coupling for coupling the flexible BaTiO3The output end outputs potential difference generated by each P-type semiconductor film and each N-type semiconductor film on each side surface of the friction power generation film under the condition of temperature difference;
the second set of outputs includes a second set of outputs for coupling the flexible BaTiO to a substrate3The friction power generation film is used as an intermediate layer, and the output end outputs the surface potential difference on two sides generated by deformation, extrusion and friction.
3. The combined fully flexible power generating unit body as claimed in claim 1, wherein each P-type semiconductor film and each N-type semiconductor film are made of Bi2Te3And forming a semiconductor film.
4. The combined type fully flexible power generation unit body according to claim 3, wherein the Bi2Te3The preparation process of the semiconductor film comprises the following steps:
step S11: 5g of Bi are weighed2Te3The semiconductor powder and 0.375g of cellulose were dissolved in5g of deionized water, then 12g of surfactant is added and placed in an ultrasonic crusher, and the mixture is subjected to ultrasonic treatment until the dispersion is complete;
step S12: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform Bi is obtained2Te3A semiconductor thin film;
step S13: the obtained Bi2Te3The semiconductor film is maintained in a tube furnace under nitrogen atmosphere [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
5. The hybrid fully flexible power generation unit body of claim 4, wherein the surfactant is a 3.33% aqueous PVA solution;
the preparation method of the surfactant comprises the following steps:
weighing 10g of PVA powder, and dissolving in 300mL of deionized water;
stirring for about 2 hours at 100 ℃ under the condition of 2000 revolutions of mechanical stirring to fully dissolve PVA powder in water, and standing for 10, 12 hours.
6. The combined type fully flexible power generation unit body according to claim 4, wherein the Bi2Te3The purity of the semiconductor powder is 99.99 percent, and the Bi is2Te3The particle size of the semiconductor powder is 2500 meshes;
the cellulose is sulfonated cotton cellulose, the diameter of the cellulose is [4, 10] nanometer, and the length of the cellulose is [100, 500] nanometer.
7. The combined type full-flexible power generation unit body according to claim 4, wherein the step S13 specifically comprises:
the obtained Bi2Te3Placing the semiconductor film in a tube furnace in a nitrogen environment, and maintaining the semiconductor film under a preset pressure and a preset clamping force [200, 300]]Heating at the temperature of 2 hours to obtain sintered Bi2Te3A semiconductor thin film.
8. The hybrid fully flexible power generation unit body of claim 1, wherein the flexible BaTiO3The preparation process of the friction power generation film comprises the following steps:
step S21: 5g of BaTiO are weighed3Dissolving semiconductor powder and 0.375g of cellulose in 5g of deionized water, adding 12g of surfactant, placing in an ultrasonic crusher, and performing ultrasonic treatment until the dispersion is complete;
step S22: the homogenized solution obtained by ultrasonic treatment is placed on a flat PVC rigid plastic sheet in a room temperature environment and naturally settled and dried [12, 16 ]]In hours, uniform BaTiO is obtained3Semiconductor thin film as the flexible BaTiO3A triboelectric power generating film.
9. A human body wearable electronic device, characterized in that it comprises the combined type full flexible power generation unit body of any one of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010209825.XA CN111554793B (en) | 2020-03-23 | 2020-03-23 | Combined type full-flexible power generation unit body and human body wearable electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010209825.XA CN111554793B (en) | 2020-03-23 | 2020-03-23 | Combined type full-flexible power generation unit body and human body wearable electronic equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111554793A CN111554793A (en) | 2020-08-18 |
| CN111554793B true CN111554793B (en) | 2021-10-15 |
Family
ID=72004139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010209825.XA Active CN111554793B (en) | 2020-03-23 | 2020-03-23 | Combined type full-flexible power generation unit body and human body wearable electronic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111554793B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112436582B (en) * | 2020-11-11 | 2023-03-17 | 大连海事大学 | Chain type composite self-energy supply device and marine organism sensing system |
| CN112461291A (en) * | 2020-11-11 | 2021-03-09 | 大连海事大学 | Modularization concatenation formula is from energy supply device and marine biosensor system |
| CN113746364A (en) * | 2021-07-23 | 2021-12-03 | 北京师范大学 | Direct-current friction nano generator based on organic semiconductor Schottky heterojunction |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102684546A (en) * | 2012-05-15 | 2012-09-19 | 纳米新能源（唐山）有限责任公司 | Friction generator |
| CN104409621A (en) * | 2014-12-04 | 2015-03-11 | 长沙理工大学 | Semiconductor film type thermo-electric device and manufacturing method thereof |
| CN211045477U (en) * | 2019-11-22 | 2020-07-17 | 苏州鸿凌达电子科技有限公司 | Flexible thermoelectric device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7696668B2 (en) * | 2007-10-29 | 2010-04-13 | Ut-Battelle, Llc | Solid state transport-based thermoelectric converter |
| US20140174496A1 (en) * | 2012-12-21 | 2014-06-26 | Georgia Tech Research Corporation | Hybrid generator using thermoelectric generation and piezoelectric generation |
| CN104426414B (en) * | 2013-08-23 | 2016-08-10 | 纳米新能源（唐山）有限责任公司 | Generate electricity effect improved friction generator and preparation method thereof |
| KR102293796B1 (en) * | 2014-12-03 | 2021-08-25 | 삼성전자주식회사 | Triboelectric generating device |
| CN107342709B (en) * | 2017-06-23 | 2019-10-18 | 北京科技大学 | A kind of compound energy system being collected simultaneously gas mechanical energy and thermal energy |
-
2020
- 2020-03-23 CN CN202010209825.XA patent/CN111554793B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102684546A (en) * | 2012-05-15 | 2012-09-19 | 纳米新能源（唐山）有限责任公司 | Friction generator |
| CN104409621A (en) * | 2014-12-04 | 2015-03-11 | 长沙理工大学 | Semiconductor film type thermo-electric device and manufacturing method thereof |
| CN211045477U (en) * | 2019-11-22 | 2020-07-17 | 苏州鸿凌达电子科技有限公司 | Flexible thermoelectric device |
Non-Patent Citations (3)
| Title |
|---|
| "A Smart Pipet Tip: Triboelectricity and Thermoelectricity Assisted in situ Evaluation of Electrolyte Concentration";Dongwhi Choi等;《Nano energy》;20170610;第38卷;第1-7页 * |
| "Rational Design for Optimizing Hybrid Thermo-triboelectric";Byungseok Seo等;《ACS Energy Letters》;20190712;第4卷(第9期);第1-17页 * |
| "Triboelectric–Thermoelectric Hybrid Nanogenerator for Harvesting Energy from Ambient Environments";Ying Wu等;《Advanced Materials》;20180820;第3卷(第11期);第1-7页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111554793A (en) | 2020-08-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111554793B (en) | Combined type full-flexible power generation unit body and human body wearable electronic equipment | |
| Zhang et al. | Conversion of solar power to chemical energy based on carbon nanoparticle modified photo-thermoelectric generator and electrochemical water splitting system | |
| Hu et al. | Tailored graphene systems for unconventional applications in energy conversion and storage devices | |
| Singh et al. | Recent advances, challenges, and prospects of piezoelectric materials for self-charging supercapacitor | |
| AU2004298164B2 (en) | Actuator element and production method therefor | |
| Weng et al. | Electric-fish-inspired actuator with integrated energy-storage function | |
| Gao et al. | Heterointerface engineering and piezoelectric effect enhanced performance of self-charging supercapacitors power cell | |
| Zhou et al. | Self-chargeable flexible solid-state supercapacitors for wearable electronics | |
| Sahoo et al. | Self-charging supercapacitors for smart electronic devices: A concise review on the recent trends and future sustainability | |
| CN103112846A (en) | Preparation method of graphene-carbon nanotube-nano tin dioxide three-dimensional composite material and product thereof | |
| Gilshteyn et al. | Flexible self-powered piezo-supercapacitor system for wearable electronics | |
| Uddin et al. | Wide-ranging impact-competent self-powered active sensor using a stacked corrugated-core sandwich-structured robust triboelectric nanogenerator | |
| Han et al. | Insulating polymers for flexible thermoelectric composites: A multi-perspective review | |
| Jabri et al. | Thermoelectric energy conversion in buildings | |
| Xia et al. | A solar thermoelectric conversion material based on Bi2Te3 and carbon nanotube composites | |
| Li et al. | Fabrication and piezoelectric-pyroelectric properties of electrospun PVDF/ZnO composite fibers | |
| JP2020198330A (en) | Thermoelectric conversion material and method of manufacturing the same | |
| Xu et al. | Electrodeposition preparation and optimization of fan-shaped miniaturized radioisotope thermoelectric generator | |
| Sivasubramanian et al. | A review on photovoltaic and nanogenerator hybrid system | |
| CN105513823A (en) | Preparation method of self-supported composite film based on carbon nano tubes | |
| Yang et al. | Fiber-shaped fluidic nanogenerator with high power density for self-powered integrated electronics | |
| Zeng et al. | Polyaniline-supported Al-doped MnO 2@ carbon cloth-based electrode material for quasi-solid-state flexible supercapacitor | |
| Khatun et al. | In situ synthesized electroactive and large dielectric BaF2/PVDF nanocomposite film for superior and highly durable self-charged hybrid photo-power cell | |
| Wang et al. | Ferroelectric La x Fe0. 1–x Codoped ZnO Nanorod Triboelectric Nanogenerators for Electrochemical Rhodamine B Degradation | |
| Abdullah et al. | Photovoltaic and EIS performance of SnO2/SWCNTS based–sensitized solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220916 Address after: 215300 3rd floor, R & D building, No. 1699, Zuchongzhi South Road, Yushan Town, Kunshan City, Suzhou City, Jiangsu Province Patentee after: Space liquid gold technology research (Kunshan) Co.,Ltd. Address before: 100193 No. 2 Old Summer Palace West Road, Beijing, Haidian District Patentee before: CHINA AGRICULTURAL University |