CN111552582B - Method and device for screening weak flash blocks and solid state disk - Google Patents
Method and device for screening weak flash blocks and solid state disk Download PDFInfo
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- CN111552582B CN111552582B CN202010334459.0A CN202010334459A CN111552582B CN 111552582 B CN111552582 B CN 111552582B CN 202010334459 A CN202010334459 A CN 202010334459A CN 111552582 B CN111552582 B CN 111552582B
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Abstract
The embodiment of the invention provides a method and a device for screening flash weak blocks and a solid state disk, and relates to the field of solid state disks, wherein the method comprises the steps of judging whether the RBE value of at least one area in a block is larger than or equal to a second threshold value or not when the RBE values of all the areas in the block are smaller than a first threshold value; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information characterizes RBE values and positions of all regions in the block. When the RBE values of all the areas in the block are smaller than the maximum weak block threshold value, whether the block is a weak block or not is judged through the RBE values and the positions of all the areas in the block, the weak block with the risk can be completely, comprehensively and accurately identified in advance as far as possible, and the weak block is avoided or limited from being used in business, so that the correctness of data access is ensured, the service life of the solid state disk is prolonged, and the customer experience is improved.
Description
Technical Field
The invention relates to the field of solid state disks, in particular to a method and a device for screening weak flash blocks and a solid state disk.
Background
Due to the influence of a production process, electrical characteristics and the like, a part of blocks (blocks) of the NAND flash are defective, and most manufacturers mark the blocks as original factory bad blocks. However, some blocks still exist, the basic read-write erasing function of the blocks is available, but the blocks are extremely easy to age in the using process and cause data access abnormity, and the weak blocks cannot be screened out completely and effectively through conventional tests.
The data stored in the flash will have Bit flipping to some extent, and the index thereof can be measured by the number of original Bit errors (RBE), that is, the uncorrected data acquired from the flash is compared with the original data, and the number of Bit flipping is counted. Generally, the unit is 1K, e.g., RBE =30, i.e., 30 bits of 1K data have transitions.
Nowadays, the basic weak block screening scheme basically sets a relatively large RBE threshold to ensure the reliability of the error correction algorithm, while the RBE of data read from a normal block after erasing is relatively low. However, some NAND flash devices have poor quality of the batch due to process limitation or production environment influence, short-term basic functions are available but cannot be used for a long time, the weak blocks cannot be effectively identified through a screening scheme such as a maximum threshold method, and in short, the scheme has a low identification rate for the weak blocks.
Disclosure of Invention
In view of the above, the present invention provides a method and an apparatus for screening weak flash blocks, and a solid state disk.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, an embodiment provides a method for screening weak flash blocks, where each block in a flash memory of a solid state disk includes multiple regions with equal storage spaces, including:
when the RBE values of all the areas in the block are smaller than a first threshold, judging whether the RBE value of at least one area in the block is larger than or equal to a second threshold; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information represents RBE values and positions of all regions in the block; the first threshold and the second threshold are obtained according to the type of the flash memory particles, the temperature, the erasing times and the data mode.
In an optional embodiment, the step of determining whether the block is a weak block according to the region information includes:
acquiring the number of target rows and the number of target columns in the block; the target row comprises at least one of the regions where the RBE value is greater than or equal to a second threshold; the target column includes at least one of the regions where the RBE value is greater than or equal to a second threshold;
and judging whether the block is a weak block or not according to the number of the target rows and the number of the target columns.
In an optional embodiment, the step of determining whether the block is a weak block according to the number of the target rows and the number of the target columns includes:
judging whether the number of the target rows is greater than or equal to a third threshold value or whether the number of the target columns is greater than or equal to a fourth threshold value; if yes, marking the block as a weak block; the third threshold value is a proportional value of the total line number of the area; the fourth threshold is a proportional value of the total column number of the area;
in an optional embodiment, if not, obtaining an RBE average value of all the regions in the block, and determining whether the RBE average value is greater than a second threshold; if yes, marking the block as a weak block; if not, the block is marked as a normal block.
In an optional embodiment, before the step of determining whether the RBE value of at least one of the regions in the block is greater than or equal to the second threshold, the method includes:
judging whether the RBE value of at least one region in the block is larger than or equal to a first threshold value; if so, the block is marked as a weak block.
In an alternative embodiment, after the step of marking the block as a weak block and after the step of marking the block as a normal block, the method comprises:
and acquiring the area information of the next block, and performing weak block detection on the block according to the area information until all the blocks in the flash memory are detected.
In a second aspect, an embodiment provides an apparatus for screening weak flash blocks, where each block in a flash memory of a solid state disk includes a plurality of regions with equal storage space size, including:
a judging module, configured to, when the RBE values of all the regions in the block are smaller than a first threshold, judge whether the RBE value of at least one of the regions in the block is greater than or equal to a second threshold; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information represents RBE values and positions of all regions in the block; the first threshold and the second threshold are obtained according to the type of the flash memory particles, the temperature, the erasing times and the data mode.
In an alternative embodiment, the method further comprises:
the acquisition module is used for acquiring the number of target rows and the number of target columns in the block; the target row comprises at least one of the regions where the RBE value is greater than or equal to a second threshold; the target column includes at least one of the regions where the RBE value is greater than or equal to a second threshold;
and the processing module is used for judging whether the block is a weak block or not according to the number of the target rows and the number of the target columns.
In an optional embodiment, the determining module is further configured to determine whether the number of the target rows is greater than or equal to a third threshold, or whether the number of the target columns is greater than or equal to a fourth threshold; if yes, marking the block as a weak block; the third threshold value is a proportional value of the total line number of the area; the fourth threshold is a proportional value of the total column number of the area;
if not, obtaining the RBE average value of all the areas in the block, and judging whether the RBE average value is larger than a second threshold value or not; if yes, marking the block as a weak block; if not, the block is marked as a normal block.
In an optional embodiment, the determining module is further configured to determine whether an RBE value of at least one of the regions in the block is greater than or equal to a first threshold; if so, the block is marked as a weak block.
In an optional embodiment, the processing module is further configured to obtain the area information of the next block, and perform weak block detection on the block according to the area information until all the blocks in the flash memory are detected. In a third aspect, an embodiment provides a solid state disk, which includes a processor and a memory, where the memory stores instructions that can be executed by the processor, and the processor can execute the instructions to implement the method for screening weak flash blocks described in any one of the foregoing embodiments.
According to the method, the device and the solid state disk for screening the flash weak blocks, provided by the embodiment of the invention, each block in a flash memory of the solid state disk comprises a plurality of regions with equal storage space size; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information represents RBE values and positions of all regions in the block; the second threshold is a proportional value of the first threshold; the first threshold is a maximum weak block threshold of the inherent properties of the flash memory. When the RBE values of all the areas in the block are smaller than the maximum weak block threshold value, whether the block is a weak block or not is judged through the RBE values and the positions of all the areas in the block, the weak block with the risk can be completely, comprehensively and accurately identified in advance as far as possible, and the weak block is avoided or limited from being used in business, so that the correctness of data access is ensured, the service life of the solid state disk is prolonged, and the customer experience is improved.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram illustrating an RBE value distribution of a block according to an embodiment of the present invention.
Fig. 2 is a schematic diagram illustrating an SSD hardware module according to an embodiment of the present invention.
Fig. 3 is a schematic diagram illustrating a flow of screening weak flash blocks according to an embodiment of the present invention.
Fig. 4 is a schematic flowchart illustrating another method for screening weak flash blocks according to an embodiment of the present invention.
Fig. 5 is a functional block diagram of an apparatus for screening weak blocks of a flash memory according to an embodiment of the present invention.
An icon: 100-SSD;10-CPU;20-LDPC;30-NFC;40-NAND;50-OCM;
200-means for screening weak blocks of flash memory; 210-a judgment module; 220-an acquisition module; 230-processing module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrases "comprising one of 8230; \8230;" 8230; "does not exclude the presence of additional like elements in a process, method, article, or apparatus that comprises the element.
Due to the limitation of the production process and the architecture of NAND FLASH particle manufacturers or the limitation of the service life of the NAND FLASH particle manufacturers through abrasion and the like, the particles of all the sticking disks can not be ensured to completely meet all specifications and set conditions. Therefore, after data is written into the blocks in some NAND FLASH particles, the whole or partial content holding capacity is poor, and the data error correction capacity is greatly influenced by the superposition of factors such as temperature, erasing times, reading interference and the like, so that the probability error is caused, the loss or the abnormality of user data is possibly caused, the weak blocks also have the probability of erasing failure and other operations in the later use, and the normal access and scheduling of the data are influenced by newly-added bad blocks; therefore, it is necessary to screen out the weak blocks in the stability monitoring (RDT) stage.
The data stored in the flash will have bit flipping to some extent, and the index can be measured by RBE value, i.e. the uncorrected data acquired from the flash is compared with the original data, and the number of bit flipping is counted. Generally, the unit is 1K, e.g., RBE =30, i.e., 30 bits of 1K data have transitions.
Fig. 1 is a schematic diagram of RBE value distribution of a block according to an embodiment of the present invention.
Fig. 1 (a) is a schematic diagram of RBE value distribution of a normal block, in which each small rectangle is a region.
In the embodiment, the size of the storage space of each area is 1K, and the maximum weak block threshold of the flash is 50; as can be seen from fig. 1 (a), the RBE value of each region of the normal block is less than 50.
Fig. 1 (b) is a schematic diagram of RBE value distribution of a bad block, which includes a region with an RBE value of 91, which is greater than the maximum weak block threshold 50, and the bad block can be identified by the maximum weak block threshold method.
Fig. 1 (c) is a schematic view of RBE value distribution of sporadically distributed weak blocks, which includes a plurality of regions with larger RBE values but less than 50, and such sporadically distributed weak blocks cannot be identified by the maximum weak block threshold method.
Fig. 1 (d) is a diagram illustrating RBE value distribution of a striped weak block.
Fig. 1 (e) is a diagram illustrating RBE value distribution of another type of stripped weak block.
Since the RBE values of all regions in fig. 1 (c), (d), and (e) are less than 50, the weak blocks cannot be identified by the maximum weak block threshold method.
After the data is written into FLASH, error correction is carried out according to RBE according to the divided areas when the data is read out. The RBE value of a block with normal quality is shown in fig. 1 (a), and a general weak block screening strategy is a maximum weak block threshold method set for the block; as shown in fig. 1 (b), if the maximum threshold is set to be RBE =50, the weak block can be screened, and the weak blocks of fig. 1 (c), (d), and (e) cannot be effectively screened by using the maximum weak block threshold method in the RDT test because the RBEs are not high, but may be abnormal during normal use; but if the threshold is set too low, a large number of bad blocks may be screened out, affecting the capacity of the disc and causing a lot of waste.
Therefore, the embodiment of the present invention provides a method for screening weak blocks of a flash memory, which adds a new weak block screening strategy to an original weak block screening scheme, and can more effectively and comprehensively screen out risky weak blocks, thereby avoiding using such weak blocks when a service layer uses and stores key data or hot data.
Fig. 2 is a schematic diagram of an SSD hardware module according to an embodiment of the invention.
The SSD100 includes a CPU10, a Low Density Parity Check (LDPC) module 20, a NAND Flash Controller (NFC) 30, a NAND40, and an On Chip Memory (OCM) 50.
The CPU is a central processor of the SSD and is responsible for overall scheduling.
The LDPC is an error correction algorithm module used for correcting the inversion of the data coming out of the NAND and providing the RBE value size in a fixed area.
And the NFC is responsible for command interaction between the master control and the NAND, and parameters and functions of the LDPC module can be configured at the same time. When data is read, the NFC sends an instruction to the NAND to take out original data, then the original data are sent to the LDPC module to carry out error correction, and the NFC monitors, obtains an error correction result and then makes a decision. And if the error correction fails, determining whether to continue the error correction, adjusting the strategy to continue the error correction, and the like.
The NAND is used for flash granules for storing user data and system data.
The OCM is a section of buffer in the SSD, and when data is written, specific data can be constructed in the OCM area according to configuration parameters and the data is written into the NAND FLASH. When data is read from the NAND FLASH, another area is selected in the OCM to store the read data. The data consistency is judged by comparing the data of the two pieces of area.
The invention constructs effective data through the RDT module to be stored in the OCM, then writes the effective data into each block of the NAND FLASH, reads the data after being stored for a period of time at high temperature, corrects the data through NFC and LDPC, and then stores the data into the OCM. The LDPC module can check whether the data has bit to be turned and the RBE value in the fixed area, the RBE value is sent to the RDT module to detect and judge the bad block and the weak block, and is timely added into the bad block table and the weak block table until all the block tests are completed.
Fig. 3 is a schematic flow chart of screening weak flash blocks according to an embodiment of the present invention.
And 102, recording the area information of the block, and judging whether the block is a weak block or not according to the area information.
In this embodiment, when the RBE values of all the regions in the block are smaller than the first threshold, it is determined whether the RBE value of at least one region in the block is greater than or equal to the second threshold; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information represents RBE values and positions of all regions in the block. When the RBE values of all the areas in the block are smaller than the maximum weak block threshold value, whether the block is a weak block or not is judged through the RBE values and the positions of all the areas in the block, the weak block with the risk can be completely, comprehensively and accurately identified in advance as far as possible, and the weak block is avoided or limited from being used in business, so that the correctness of data access is ensured, the service life of the solid state disk is prolonged, and the customer experience is improved.
Fig. 4 is a schematic flowchart of another process for screening weak blocks of a solid state disk according to an embodiment of the present invention.
If yes, go to step 205; if not, go to step 202.
The first threshold is the maximum weak block threshold of the inherent attribute of the flash; the maximum weak block threshold of the flash is 50 in this embodiment, which is obtained by weighting factors such as the flash grain type, temperature, erasing times, and data model.
For the screening of the weak blocks, the blocks to be tested of Nand Flash are erased and then written into effective data, and conditions such as temperature, abrasion times, data models and the like to be tested are set. And after the conditions are met and the data are written, storing the data at normal temperature or high temperature for a period of time, and then entering a weak block screening module for processing.
And then selecting an initial test block, judging whether the initial test block is a factory bad block or a reserved block, if not, reading RBE values of all regions of the initial test block, and if the RBE value of at least one region in the initial test block is more than or equal to 50, marking the initial test block as a weak block.
And if the initial test block is a factory bad block or a reserved block, selecting the next block to perform weak block test.
It should be noted that the reserved block is a block in which the key information or inherent information of the solid state disk is stored when the factory leaves, and neither the factory bad block nor the reserved block participates in the weak block detection.
If yes, go to step 203; if not, go to step 204.
The second threshold is obtained according to factors such as flash particle types, temperatures, erasing times, data models and the like, and in practical application, for convenience of adjustment, the second threshold can be a proportional value of the first threshold, the first threshold is 50, and the second threshold can be but is not limited to 20% of the first threshold; in this embodiment, the second threshold is set to 10.
Step 203, recording the area information of the block, and judging whether the block is a weak block according to the area information.
The region information comprises RBE values and positions of all regions in the block.
It should be noted that step 203 includes three substeps, and details not mentioned in this step will be described in the substeps.
Step 203-1, obtain the number of target rows and the number of target columns in the block.
The target row comprises at least one region with an RBE value greater than or equal to 10; the target column includes at least one region having an RBE value of 10 or more.
Step 203-2, judging whether the block is a weak block according to the number of the target rows and the number of the target columns.
It should be noted that step 203-2 includes a sub-step, and details of the sub-step will be described without reference to the sub-step.
Step 203-2-1, determine whether the number of target rows is greater than or equal to the third threshold, or whether the number of target columns is greater than or equal to the fourth threshold.
If yes, go to step 205; if not, go to step 203-3.
The third threshold value is a proportional value of the total row number of the area, and the fourth threshold value is a proportional value of the total column number of the area; in this embodiment, a description is given with a ratio value of 0.5; the block shown in fig. 1 (c) has ten rows and ten columns, and the third threshold value and the fourth threshold value are both 5.
As shown in fig. 1 (c), the rows in which the region with an RBE value of 10 or more is located have seven rows, and the RBE values are 33, 34, 33, 41, 42, 36 and 38, respectively; the column where the region with the RBE value more than or equal to 10 is located is only three columns; therefore, the number of target rows in fig. 1 (c) is 5 or more, and the number of target columns is 5 or less.
And 203-3, acquiring the RBE average values of all the areas in the block, and judging whether the RBE average values are greater than a second threshold value.
If yes, go to step 205; if not, go to step 204.
And summing the RBE values of all the regions in the block and dividing the sum by the total number of the regions to obtain an RBE average value.
And step 204, marking the block as a normal block.
The blocks are marked as normal blocks and then the next block is selected for weak block testing until all blocks have passed the weak block test.
In step 205, the block is marked as a weak block.
And marking the blocks as weak blocks, recording weak block information of the blocks, and then selecting the next block to perform weak block testing until all the blocks are subjected to weak block testing. Without the method, the solid state disk only repeatedly performs some read-write-erase tests and the like in the stage of screening the bad blocks in the RDT or BIT test, and specific bad blocks and obviously poor bad blocks can be identified through the operations, for example, the RBE value is larger than 50. For example, the blocks include more regions with RBE values less than 50 and greater than or equal to 10, when the blocks store critical data after being formed into a disc, the data is easily unable to be corrected successfully after being used for a period of time due to read interference or influence of various factors such as high and low temperatures, and the like, so that data acquisition fails or is lost; even though data can be occasionally recovered through various error correction means, the error correction process introduces a large amount of time delay, so that the performance is seriously degraded, and the user experience is greatly influenced.
Secondly, under the condition without the invention, only part of bad blocks can be screened out after the weak block screening test of the disk is carried out. And the weak block detection function of the invention is added, so that more and more comprehensive dangerous weak blocks can be screened out. And reference suggestions for limited use, such as storing some cold data, or dimension information and non-critical information, can be provided for the weak blocks.
Finally, the invention adds a new weak block screening strategy, carries out row-column statistics and screening strategies of the storage data subareas, and carries out summary analysis on RBE value conditions obtained by block reading operation through an RBE value average value comparison and judgment method, and carries out weak block detection and judgment through each dimensionality such as configurable row and column thresholds, RBE values and the like, thereby ensuring the weak block conditions to be judged to a greater extent and more accurately, and further ensuring the accuracy of the test results. And the result of the weak block is gathered, whether the particle quality reaches the standard or the related problem of the link can be judged, a certain reference direction is provided for the use and the maintenance of the disk, if a plurality of pieces of the channel are all weak blocks, the re-welding can be tried, and if a single particle weak block is suspected to be weak, the adjustment of the threshold value of the weak block can be tried, and the like.
In summary, in the method, the apparatus, and the solid state disk for screening weak flash blocks provided in the embodiments of the present invention, each block in a flash memory of the solid state disk includes a plurality of regions with equal storage spaces, and when RBE values of all regions in the block are smaller than a first threshold, it is determined whether an RBE value of at least one region in the block is greater than or equal to a second threshold; if so, recording the area information of the block, and judging whether the block is a weak block or not according to the area information; the region information represents RBE values and positions of all regions in the block; the first threshold and the second threshold are obtained according to the flash memory particle type, the temperature, the erasing times and the data mode. When the RBE values of all the areas in the block are smaller than the maximum weak block threshold value, whether the block is a weak block or not is judged through the RBE values and the positions of all the areas in the block, the weak block with the risk can be completely, comprehensively and accurately identified in advance as far as possible, and the weak block is avoided or limited from being used in business, so that the correctness of data access is ensured, the service life of the solid state disk is prolonged, and the customer experience is improved.
In order to perform the corresponding steps in the above embodiments and various possible manners, an implementation manner of the apparatus for screening weak blocks of a flash memory is given below. Further, referring to fig. 5, fig. 5 is a functional block diagram of an apparatus for screening weak blocks of a flash memory according to an embodiment of the present invention. It should be noted that the basic principle and the resulting technical effect of the apparatus for screening weak flash blocks provided in this embodiment are the same as those of the above embodiments, and for the sake of brief description, no part of this embodiment is mentioned, and reference may be made to the corresponding contents in the above embodiments. The apparatus 200 for screening weak flash blocks includes: a judging module 210, an obtaining module 220 and a processing module 230.
It is understood that, in one embodiment, step 201, step 202, step 203-2-1 and step 203-3 are performed by the determining module 210.
It is to be appreciated that in one embodiment, step 203-1 is performed by the acquisition module 220.
It is understood that in one embodiment, step 204 and step 205 are performed by the processing module 230.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other manners. The apparatus embodiments described above are merely illustrative and, for example, the flowchart and block diagrams in the figures illustrate the architecture, functionality, and operation of possible implementations of apparatus, methods and computer program products according to various embodiments of the present invention. In this regard, each block in the flowchart or block diagrams may represent a module, segment, or portion of code, which comprises one or more executable instructions for implementing the specified logical function(s). It should also be noted that, in some alternative implementations, the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or the blocks may sometimes be executed in the reverse order, depending upon the functionality involved. It will also be noted that each block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by special purpose hardware-based systems which perform the specified functions or acts, or combinations of special purpose hardware and computer instructions.
In addition, the functional modules in the embodiments of the present invention may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
The functions, if implemented in the form of software functional modules and sold or used as a stand-alone product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A method for screening weak flash blocks, wherein each block in a flash memory of a solid state disk comprises a plurality of regions with equal storage space size, the method comprises the following steps:
when the RBE values of all the areas in the block are smaller than a first threshold, judging whether the RBE value of at least one area in the block is larger than or equal to a second threshold; if so, recording the area information of the block, and judging whether the block is a weak block according to the area information; the region information represents RBE values and positions of all regions in the block; the first threshold and the second threshold are obtained according to the type of flash memory particles, the temperature, the erasing times and the data mode;
judging whether the block is a weak block according to the area information, wherein the step comprises the following steps:
acquiring the number of target rows and the number of target columns in the block; the target row comprises at least one of the regions where the RBE value is greater than or equal to a second threshold; the target column includes at least one of the regions where the RBE value is greater than or equal to a second threshold;
and judging whether the block is a weak block or not according to the number of the target rows and the number of the target columns.
2. The method of claim 1, wherein the step of determining whether the block is a weak block according to the number of target rows and the number of target columns comprises:
judging whether the number of the target rows is greater than or equal to a third threshold value or whether the number of the target columns is greater than or equal to a fourth threshold value; if yes, marking the block as a weak block; the third threshold is a proportional value of the total line number of the area; the fourth threshold is a proportional value of the total column number of the area;
if not, obtaining the RBE average value of all the areas in the block, and judging whether the RBE average value is larger than a second threshold value or not; if yes, marking the block as a weak block; if not, the block is marked as a normal block.
3. The method of claim 1, wherein said step of determining whether the RBE value of at least one of said regions in said block is greater than or equal to a second threshold comprises, prior to said step of:
judging whether the RBE value of at least one region in the block is larger than or equal to a first threshold value; if so, the block is marked as a weak block.
4. The method of claim 2 or 3, wherein the step of marking the block as a weak block and the step of marking the block as a normal block are followed by:
and acquiring the area information of the next block, and performing weak block detection on the block according to the area information until all the blocks in the flash memory are detected.
5. The utility model provides a device of screening flash memory weak block, every piece includes a plurality of regions that storage space size equals in the flash memory of solid state hard drives, its characterized in that includes:
a judging module, configured to, when the RBE values of all the regions in the block are smaller than a first threshold, judge whether the RBE value of at least one of the regions in the block is greater than or equal to a second threshold; if so, recording the area information of the block, and judging whether the block is a weak block according to the area information; the region information represents RBE values and positions of all regions in the block; the first threshold and the second threshold are obtained according to the type of flash memory particles, the temperature, the erasing times and the data mode;
the acquisition module is used for acquiring the number of target rows and the number of target columns in the block; the target row comprises at least one of the regions where the RBE value is greater than or equal to a second threshold; the target column includes at least one of the regions where the RBE value is greater than or equal to a second threshold;
and the processing module is used for judging whether the block is a weak block or not according to the number of the target rows and the number of the target columns.
6. The apparatus of claim 5,
the judging module is further configured to judge whether the number of the target rows is greater than or equal to a third threshold, or whether the number of the target columns is greater than or equal to a fourth threshold; if yes, marking the block as a weak block; the third threshold value is a proportional value of the total line number of the area; the fourth threshold is a proportional value of the total column number of the area;
the judging module is further configured to judge whether an RBE value of at least one of the regions in the block is greater than or equal to a first threshold; if yes, marking the block as a weak block;
if not, obtaining the RBE average value of all the areas in the block, and judging whether the RBE average value is larger than a second threshold value or not; if yes, marking the block as a weak block; if not, the block is marked as a normal block.
7. The apparatus of claim 5 or 6,
the processing module is further configured to obtain the area information of the next block, and perform weak block detection on the block according to the area information until all the blocks in the flash memory are detected.
8. A solid state disk comprising a processor and a memory, the memory storing instructions executable by the processor, the processor being configured to implement the method for screening weak flash blocks according to any one of claims 1 to 4.
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