CN111524948A - Color filter structure, display panel and preparation method thereof - Google Patents
Color filter structure, display panel and preparation method thereof Download PDFInfo
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H01L29/76—Unipolar devices, e.g. field effect transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
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Abstract
The invention provides a color filtering structure, a display panel and a preparation method thereof, wherein the color filtering structure comprises a plurality of color resistance areas and a color resistance layer, the color resistance layer is provided with color resistance units, and part of the color resistance areas are provided with the color resistance units; the first flat layer is filled in the color resistance area without the color resistance unit and is arranged in the same layer with the color resistance layer; and the second flat layer is arranged on the first flat layer and the color resistance layer. The invention provides a color filtering structure, a display panel and a preparation method thereof.A flat layer is filled in a white color resistance area, so that the thickness of the flat layer of the white color resistance area is equal to that of a color resistance layer of a red, green and blue color resistance area, and further, a pixel electrode layer of the white color resistance area and pixel electrode layers of other areas are in the same level, and light leakage is reduced.
Description
Technical Field
The invention relates to the technical field of display panels, in particular to a color filtering structure, a display panel and a preparation method thereof.
Background
In the prior art, the principle of the RGBW lcd panel technology is to add a white (W) sub-pixel to a conventional RGB pixel formed by three color filters of red (R), green (G) and blue (B), and then to apply the corresponding sub-pixel imaging technology to arrange the sub-pixels better in such a way that a human sees an image. This ensures that the display power and brightness source is not lost when generating images that are not visible to the human eye. RGBW subpixel imaging techniques address each subpixel individually and add a white subpixel to the arrangement pattern to form an RGBW pixel design that is brighter and higher resolution than the display panel of a conventional RGB pixel design. Since more backlight can be illuminated by the larger and semi-transparent W sub-pixel, rather than being blocked by the tight arrangement of smaller red, green and blue sub-pixels used for RGB stripes, both transmittance and brightness are increased. With the white sub-pixel, an increase in white brightness is achieved without an increase in power consumption. Therefore, the RGBW technology has the advantages of improving the utilization rate of the backlight brightness, saving power consumption, reducing cost and obtaining higher brightness level under the condition of not reducing resolution or increasing power consumption. Therefore, RGBW liquid crystal panels are increasingly widely used.
In the color film substrate provided by the prior art, since the R, G, B sub-pixels use color resists with the same thickness, the W sub-pixel has no color resist, the recess depth of the opening area is larger, and the pixel electrode is lower than the positions of other sub-pixels, light from other adjacent sub-pixels enters when the color film substrate is turned on, and light leakage at the edge of the W sub-pixel is caused.
Therefore, there is a need to develop a new display panel to overcome the drawbacks of the prior art.
Disclosure of Invention
An object of the present invention is to provide a display panel capable of solving the problem of the prior art that the transmittance of color filters is reduced.
In order to achieve the above object, the present invention further provides a color filter structure, which includes a plurality of color resistance regions and a color resistance layer, wherein the color resistance layer has color resistance units, and a part of the color resistance regions are provided with the color resistance units; the first flat layer is filled in the color resistance area without the color resistance unit and is arranged in the same layer with the color resistance layer; and the second flat layer is arranged on the first flat layer and the color resistance layer.
Further, in other embodiments, the color-resisting regions include a red color-resisting region, a green color-resisting region, a blue color-resisting region, and a white color-resisting region; the color resistance unit comprises a red color resistance unit, a green color resistance unit and a blue color resistance unit, the red color resistance unit is located in the red color resistance area, the green color resistance unit is located in the green color resistance area, the blue color resistance unit is located in the blue color resistance area, and the first flat layer is located in the white color resistance area.
Further, in other embodiments, the first planarization layer and the color resistance layer have the same thickness.
Another object of the present invention is to provide a display panel, which includes a thin film transistor structure layer; the color filtering structure is arranged on the thin film transistor structure layer; the pixel electrode layer is arranged on the thin film transistor structure layer and extends to the second flat layer; the pixel defining layer is arranged on the pixel electrode layer and is provided with an opening; the luminous layer is arranged in the opening and is provided with a plurality of luminous units, and each luminous unit corresponds to one color resistance area.
Further, in other embodiments, the thin film transistor structure layer includes: a substrate; a light shielding layer disposed on the substrate; a buffer layer disposed on the light-shielding layer; an active layer disposed on the buffer layer; a gate insulating layer disposed on the active layer; a gate layer; arranged on the gate insulating layer; the interlayer dielectric layer is arranged on the gate layer; the source drain layer is arranged on the interlayer dielectric layer and is connected with the active layer; and the passivation layer is arranged on the interlayer dielectric layer, and the color filtering structure is arranged on the passivation layer.
Further, in other embodiments, the material of the light shielding layer adopts at least one of molybdenum, aluminum, copper or titanium metal; the thickness of the light shielding layer is
Further, in other embodiments, the light-shielding layer has a thickness of
The buffer layer is made of one of silicon oxide or silicon nitride; the thickness of the buffer layer is
Further, in other embodiments, the material of the active layer adopts at least one of indium gallium zinc oxide and indium zinc tin oxide; the thickness of the active layer is
Further, in other embodiments, the material of the gate layer is at least one of molybdenum, aluminum, copper or titanium; the thickness of the gate layer is
Further, in other embodiments, the material of the interlayer dielectric layer is one of silicon oxide or silicon nitride; the thickness of the interlayer dielectric layer is
Further, in other embodiments, the material of the source and drain is at least one of molybdenum, aluminum, copper, or titanium, and the thickness of the source and drain is
Further, in other embodiments, the material of the passivation layer is one of silicon oxide or silicon nitride, and the thickness of the passivation layer is
The invention also provides a preparation method for preparing the display panel, which comprises a plurality of light emitting areas, and the preparation method comprises the following steps: providing a thin film transistor structure layer; forming the color resistance layer on the thin film transistor structure layer, wherein the color resistance layer is provided with color resistance units, and the color resistance units are arranged at the positions corresponding to part of the luminous areas; filling a planarization material on the thin film transistor structure layer in the color resistance region without the color resistance unit to form a first planarization layer; filling a planarization material on the first planarization layer and the color resistance layer to form a second planarization layer; forming a pixel electrode layer on the second flat layer; forming a pixel defining layer on the pixel electrode layer; forming an opening in the pixel defining layer so that the pixel electrode layer is exposed in the opening; the opening corresponds to the color resistance area; and forming a light-emitting layer in the opening, wherein the light-emitting layer is provided with a plurality of light-emitting units, and each light-emitting unit corresponds to one color resistance area.
Further, in other embodiments, the step of providing a thin film transistor structure layer includes providing a substrate; forming a light shielding layer on the substrate; forming a buffer layer on the light-shielding layer; depositing a semiconductor material on the buffer layer to form an active layer; forming a gate insulating layer on the active layer; depositing a metal material on the gate insulating layer to form a gate layer; forming an interlayer dielectric layer on the gate layer and a through hole penetrating from the surface of the interlayer dielectric layer to the surface of the active layer; depositing a metal material on the interlayer dielectric layer and in the through hole to form a source drain layer, wherein the source drain layer is connected with the active layer through the through hole; and forming a passivation layer on the interlayer dielectric layer.
Compared with the prior art, the invention has the beneficial effects that: the invention provides a color filtering structure, a display panel and a preparation method thereof.A flat layer is filled in a white color resistance area, so that the thickness of the flat layer of the white color resistance area is equal to that of a color resistance layer of a red, green and blue color resistance area, and further, a pixel electrode layer of the white color resistance area and pixel electrode layers of other areas are in the same level, and light leakage is reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a color filter structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a display panel at a white color resistance unit according to an embodiment of the present invention;
fig. 3 is a flowchart of a method for manufacturing a display panel according to an embodiment of the invention;
fig. 4 is a schematic structural diagram of step S2 of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of step S3 of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of step S4 of the method for manufacturing a display panel according to the embodiment of the present invention.
Reference numerals in the detailed description:
color filter structure-200;
red color resistance area-201; green color resistance area-202;
blue color resistance area-203; white color resistance area-204;
color resist layer-210;
red color resistance unit-211; green color resistance unit-212;
blue color resistance unit-213;
a first planarization layer-220;
a second planarization layer-230;
a display panel-100;
a light emitting region-101;
a thin film transistor structure layer-110;
a pixel electrode layer-120; pixel definition layer-130;
an opening-131; a luminescent layer-140;
a substrate-111; a light-shielding layer-112; a buffer layer-113;
an active layer-114; gate insulation-115; a gate layer-116;
interlayer dielectric layer-117; source drain layer-118; passivation layer-119.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Specific structural and functional details disclosed herein are merely representative and are provided for purposes of describing example embodiments of the present invention. The present invention may, however, be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a color filter structure 200 provided in this embodiment, where the color filter structure 200 includes a plurality of color-resisting regions, where each color-resisting region includes a red color-resisting region 201, a green color-resisting region 202, a blue color-resisting region 203, and a white color-resisting region 204. The color filter structure 200 further includes a color resist layer 210, a first flat layer 220, and a second flat layer 230.
In this embodiment, the color resistance layer 210 includes a plurality of color resistance units, and the color resistance units are classified into a red color resistance unit 211, a green color resistance unit 212, and a blue color resistance unit 213 according to colors, wherein the red color resistance unit 211 is located in the red color resistance region 201, the green color resistance unit 212 is located in the green color resistance region 202, and the blue color resistance unit 213 is located in the blue color resistance region 203.
The first planarization layer 220 is located in the white color resist region 204 and disposed on the same layer as the color resist layer 210, and the first planarization layer 220 and the color resist layer 210 have the same thickness. The second planarization layer 230 is disposed on the first planarization layer 220 and the color resist layer 210.
The present embodiment further provides a display panel 100, and the design point of the present invention lies in the structural design of the white color resistance region, and referring to fig. 1 and fig. 2, fig. 2 is a schematic structural diagram of the display panel at the white color resistance unit provided in the present embodiment.
In fig. 2, the display panel 100 includes a display region and a non-display region, and the display region is divided into a light emitting region 101 and a non-light emitting region 102. The light emitting area is provided with a plurality of corresponding light emitting units, namely pixel units. The design point of the invention lies in the display area, so the non-display area part is not described in detail. The specific structure of the display panel 100 includes a thin film transistor structure layer 110, a color filter structure 200, and a pixel electrode layer 120.
The thin film transistor structure layer 110 includes a substrate 111, a light-shielding layer 112, a buffer layer 113, an active layer 114, a gate insulating layer 115, a gate layer 116, an interlayer dielectric layer 117, a source/drain layer 118, and a passivation layer 119. Wherein the light-shielding layer 112 is disposed on the substrate 111; wherein the material of the light-shielding layer 112 is at least one of molybdenum, aluminum, copper or titanium, and the thickness of the light-shielding layer 112 is
The buffer layer 113 is arranged on the light-shielding layer 112; the buffer layer 113 is made of one of silicon oxide and silicon nitride, and the buffer layer 113 has a thickness of
The active layer 114 is disposed on the buffer layer 113; the active layer 114 is made of at least one of indium-gallium-zinc-oxide and indium-zinc-tin-oxide, and the active layer 114 has a thickness of
The gate insulating layer 115 is disposed on the active layer 114. The gate layer 116 is disposed on the gate insulating layer 115, the gate layer 116 is made of at least one of molybdenum, aluminum, copper or titanium, and the gate layer 116 has a thickness of
The interlayer dielectric layer 117 is arranged on the gate layer 116, the material of the interlayer dielectric layer 117 is silicon oxide or silicon nitride, and the thickness of the interlayer dielectric layer 117 is
The source-drain electrode layer 118 is arranged on the interlayer dielectric layer 117, and the source-drain electrode layer 118 is connected with the active layer 114; the source/drain electrode 118 is made of at least one of molybdenum, aluminum, copper or titanium, and the thickness of the source/drain electrode 118 is
A passivation layer 119 disposed on the interlayer dielectric layer 117, wherein the passivation layer 119 is made of one of silicon oxide and silicon nitride, and the passivation layer 110 has a thickness of
The first planarization layer 220 and the color filter layer 210 in the color filter structure 200 are disposed on the thin film transistor structure layer 110, specifically, on the passivation layer 119. Wherein, the first planarization layer 220 corresponds to a light emitting unit of a light emitting region. Each color resistance unit in the color resistance layer 210 corresponds to a light emitting unit of a light emitting region. For the structure of the red color resistance unit 211, the green color resistance unit 212, and the blue color resistance unit 213, please refer to fig. 2, that is, the first flat layer 220 in fig. 2 is replaced by the corresponding color resistance unit. The second flat layer 220 in the color filter structure 200 is disposed on the first flat layer 220 and the color resistance layer 210.
The pixel electrode layer 120 is disposed on the second planarization layer 220 and the passivation layer 119 and is electrically connected to the drain electrode of the source and drain electrodes through a via hole.
The pixel defining layer 130 is disposed on the pixel electrode layer 120 and the passivation layer 118. The pixel defining layer 130 is provided with an opening 131 at the light emitting unit corresponding to the light emitting region, so that the pixel electrode layer 120 is exposed in the opening 131. The opening 131 is filled with the light emitting layer 140, that is, the light emitting layer 140 is disposed on the pixel electrode layer 120 exposed in the opening 131. The light-emitting layer 140 has a plurality of light-emitting units, and each light-emitting unit corresponds to a color resistance region.
And filling a flat layer in the white color resistance region to ensure that the thickness of the flat layer in the white color resistance region is equal to that of the color resistance layers in the red, green and blue color resistance regions, so that the pixel electrode layer in the white color resistance region and the pixel electrode layers in other regions are in the same level, and light leakage is reduced.
Referring to fig. 3, fig. 3 is a flowchart illustrating a method for manufacturing a display panel 100 according to the present invention, where the method includes steps S1-S8.
Step S1: providing a thin film transistor structure layer; wherein providing a thin film transistor structure layer comprises: providing a substrate; forming a light shielding layer on the substrate; forming a buffer layer on the light-shielding layer; depositing a semiconductor material on the buffer layer to form an active layer; forming a gate insulating layer on the active layer; depositing a metal material on the gate insulating layer to form a gate layer; forming an interlayer dielectric layer on the gate layer and a through hole penetrating from the surface of the interlayer dielectric layer to the surface of the active layer; depositing a metal material on the interlayer dielectric layer and in the through hole to form a source drain layer, wherein the source drain layer is connected with the active layer through the through hole; and forming a passivation layer on the interlayer dielectric layer and the source drain layer.
Referring to fig. 4, fig. 4 is a schematic structural diagram of the display panel manufacturing method provided in this embodiment in step S2; step S2: a photoresist layer 210 is formed on the tft structure layer 110.
The display panel includes a red color resistance region 201, a green color resistance region 202, a blue color resistance region 203 and a white color resistance region 204, the color resistance layer 210 includes a red color resistance unit 211, a green color resistance unit 212 and a blue color resistance unit 213, the red color resistance unit 211 is located in the red color resistance region 201, the green color resistance unit 212 is located in the green color resistance region 202, and the blue color resistance unit 213 is located in the blue color resistance region 203.
Referring to fig. 5, fig. 5 is a schematic structural diagram of the display panel manufacturing method provided in this embodiment in step S3; step S3: the planarization material is filled in the white color resist region 204 to form a first planarization layer 210 on the thin film transistor structure layer 110.
The first planarization layer 220 is located in the white color resist region 204 and disposed on the same layer as the color resist layer 210, and the first planarization layer 220 and the color resist layer 210 have the same thickness.
Referring to fig. 6, fig. 6 is a schematic structural diagram of the display panel manufacturing method provided in this embodiment in step S4; step S4: the planarization material is filled in the first planarization layer 220 and the color resist layer 210 to form a second planarization layer 230.
Step S5: forming a pixel electrode layer on the second flat layer;
step S6: forming a pixel defining layer on the pixel electrode layer;
step S7: forming an opening in the pixel defining layer so that the pixel electrode layer is exposed in the opening; the opening corresponds to the color resistance unit;
step S8: and forming a light-emitting layer in the opening, wherein the light-emitting layer is provided with a plurality of light-emitting units, and each light-emitting unit corresponds to a color resistance unit.
The invention has the beneficial effects that: the invention provides a color filtering structure, a display panel and a preparation method thereof.A flat layer is filled in a white color resistance area, so that the thickness of the flat layer of the white color resistance area is equal to that of a color resistance layer of a red, green and blue color resistance area, and further, a pixel electrode layer of the white color resistance area and pixel electrode layers of other areas are in the same level, and light leakage is reduced.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A color filter structure comprises a plurality of color resistance regions, an
The color resistance layer is provided with color resistance units, and part of the color resistance area is provided with the color resistance units;
the first flat layer is filled in the color resistance area without the color resistance unit and is arranged in the same layer with the color resistance layer;
and the second flat layer is arranged on the first flat layer and the color resistance layer.
2. The color filter structure of claim 1, wherein the color-resistant regions comprise a red color-resistant region, a green color-resistant region, a blue color-resistant region, and a white color-resistant region; the color resistance unit comprises a red color resistance unit, a green color resistance unit and a blue color resistance unit, the red color resistance unit is located in the red color resistance area, the green color resistance unit is located in the green color resistance area, the blue color resistance unit is located in the blue color resistance area, and the first flat layer is located in the white color resistance area.
3. The color filter structure of claim 1, wherein the first planarization layer has the same thickness as the color resist layer.
4. A display panel, comprising
A thin film transistor structure layer;
the color filter structure of any of claims 1-2, disposed on the thin film transistor structure layer;
the pixel electrode layer is arranged on the thin film transistor structure layer and extends to the second flat layer;
the pixel defining layer is arranged on the pixel electrode layer and is provided with an opening;
the luminous layer is arranged in the opening and is provided with a plurality of luminous units, and each luminous unit corresponds to one color resistance area.
5. The display panel of claim 4, wherein the thin film transistor structure layer comprises:
a substrate;
a light shielding layer disposed on the substrate;
a buffer layer disposed on the light-shielding layer;
an active layer disposed on the buffer layer;
a gate insulating layer disposed on the active layer;
a gate electrode layer disposed on the gate insulating layer;
the interlayer dielectric layer is arranged on the gate layer;
the source drain layer is arranged on the interlayer dielectric layer and is connected with the active layer;
and the passivation layer is arranged on the interlayer dielectric layer, and the color filtering structure is arranged on the passivation layer.
6. The display panel according to claim 5, wherein the light-shielding layer is made of at least one of molybdenum, aluminum, copper, or titanium; the thickness of the light shielding layer is
The buffer layer is made of one of silicon oxide or silicon nitride; the thickness of the buffer layer is
7. The display panel according to claim 5, wherein the active layer is made of at least one of indium gallium zinc oxide and indium zinc tin oxide; the thickness of the active layer is
The material of the gate layer is at least one of molybdenum, aluminum, copper or titanium; the thickness of the gate layer is
8. The display panel according to claim 5, wherein the interlayer dielectric layer is made of one of silicon oxide or silicon nitride; the thickness of the interlayer dielectric layer is
The source and drain electrodes are made of at least one of molybdenum, aluminum, copper or titanium, and have a thickness of
The passivation layer is made of one of silicon oxide or silicon nitride, and the thickness of the passivation layer is
9. A method of manufacturing a display panel as claimed in any one of claims 3 to 8, comprising a plurality of light-emitting areas, the method comprising the steps of:
providing a thin film transistor structure layer;
forming the color resistance layer on the thin film transistor structure layer, wherein the color resistance layer is provided with color resistance units, and the color resistance units are arranged at the positions corresponding to part of the luminous areas;
filling a planarization material on the thin film transistor structure layer in the color resistance region without the color resistance unit to form a first planarization layer;
filling a planarization material on the first planarization layer and the color resistance layer to form a second planarization layer;
forming a pixel electrode layer on the second flat layer;
forming a pixel defining layer on the pixel electrode layer;
forming an opening in the pixel defining layer so that the pixel electrode layer is exposed in the opening; the opening corresponds to the color resistance area;
and forming a light-emitting layer in the opening, wherein the light-emitting layer is provided with a plurality of light-emitting units, and each light-emitting unit corresponds to one color resistance area.
10. The method as claimed in claim 9, wherein the step of providing a thin film transistor structure layer comprises
Providing a substrate;
forming a light shielding layer on the substrate;
forming a buffer layer on the light-shielding layer;
depositing a semiconductor material on the buffer layer to form an active layer;
forming a gate insulating layer on the active layer;
depositing a metal material on the gate insulating layer to form a gate layer;
forming an interlayer dielectric layer on the gate layer and a through hole penetrating from the surface of the interlayer dielectric layer to the surface of the active layer;
depositing a metal material on the interlayer dielectric layer and in the through hole to form a source drain layer, wherein the source drain layer is connected with the active layer through the through hole;
and forming a passivation layer on the interlayer dielectric layer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299542A (en) * | 2021-05-20 | 2021-08-24 | 安徽熙泰智能科技有限公司 | Preparation method of high-resolution silicon-based color OLED micro-display device |
| WO2024021205A1 (en) * | 2022-07-25 | 2024-02-01 | 武汉天马微电子有限公司 | Display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456846A (en) * | 2010-10-21 | 2012-05-16 | 乐金显示有限公司 | Organic light emitting display device |
| CN104576694A (en) * | 2014-12-17 | 2015-04-29 | 深圳市华星光电技术有限公司 | Oled display device and manufacturing method thereof |
| CN104701465A (en) * | 2015-03-10 | 2015-06-10 | 京东方科技集团股份有限公司 | Top-emission type organic electroluminescent display panel and manufacturing method thereof as well as display device |
| CN107170762A (en) * | 2017-06-16 | 2017-09-15 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
-
2020
- 2020-04-29 CN CN202010354035.0A patent/CN111524948A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456846A (en) * | 2010-10-21 | 2012-05-16 | 乐金显示有限公司 | Organic light emitting display device |
| CN104576694A (en) * | 2014-12-17 | 2015-04-29 | 深圳市华星光电技术有限公司 | Oled display device and manufacturing method thereof |
| CN104701465A (en) * | 2015-03-10 | 2015-06-10 | 京东方科技集团股份有限公司 | Top-emission type organic electroluminescent display panel and manufacturing method thereof as well as display device |
| CN107170762A (en) * | 2017-06-16 | 2017-09-15 | 武汉华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113299542A (en) * | 2021-05-20 | 2021-08-24 | 安徽熙泰智能科技有限公司 | Preparation method of high-resolution silicon-based color OLED micro-display device |
| CN113299542B (en) * | 2021-05-20 | 2023-03-10 | 安徽熙泰智能科技有限公司 | Preparation method of high-resolution silicon-based color OLED micro-display device |
| WO2024021205A1 (en) * | 2022-07-25 | 2024-02-01 | 武汉天马微电子有限公司 | Display panel and display device |
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